Abstract
For the first time, we obtained the photoreflectance spectra in single-layer samples of porous silicon with 13 μm thick in the 550–1000 nm spectral region. To describe the observed reflection and photoreflectance spectra, we use a theory of multiple-beam interference, taking into account the strong absorption of Si in this spectral region. We show that, under the action of a laser radiation with a wavelength 532 nm of 30 mW power and pulse duration 3 ms, the change in the refractive index δn reaches values of the order of 10−5, and this takes place due to the thermal nonlinearity of the refractive index. We show that photoreflectance spectroscopy can be used to measure the thermo-optic coefficients of porous silicon.
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Manuscript submitted by the authors in English on January 27, 2020.
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Avakyants, L.P., Svyakhovskiy, S.E., Aslanyan, A.E. et al. Photoreflectance in Monolayer Mesoporous Silicon Structures. J Russ Laser Res 41, 207–214 (2020). https://doi.org/10.1007/s10946-020-09866-w
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DOI: https://doi.org/10.1007/s10946-020-09866-w