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Effect of Leishman Stain on Synthesis, Characteristics, and Morphology of Zn0.15Cd0.8S0.8 Thin Film

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Abstract

ZnCdS thin film has been formed by chemical bath deposition using Leishman stain and complexing agent. The synthesized thin film was characterized using x-ray diffraction analysis, scanning electron microscope (SEM), atomic force microscopy (AFM), and ultraviolet–visible (UV–Vis) and photoluminescence spectroscopy. The x-ray diffraction pattern revealed cubic and hexagonal crystalline phases in the thin film. The morphological and topographical parameters were confirmed by SEM and AFM. The properties of the thin film were found to change due to the growth mechanism with the element ratios Zn/Cd and Zn/CdS depending on the complexing agent. The bandgap values obtained for the thin films were 2.42 eV, 2.43 eV, and 2.92 eV.

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Authors and Affiliations

  1. Department of Physics, Government Polytechnic College, Sankarapuram, Tamilnadu, 606401, India

    P. Settu

  2. Department of Physics, Government Arts College (Autonomous), Salem, Tamilnadu, 636007, India

    G. Gobi

  3. Department of Physics, Government Arts College – Veppanthattai, Perambalur, Tamilnadu, India

    P. Baskaran

  4. Maths and Natural Science, Abu Dhabi Men’s College, Higher College of Technology, Abu Dhabi, UAE

    N. Renuka

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  1. P. Settu
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  2. G. Gobi
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  4. N. Renuka
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Correspondence to P. Settu.

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Settu, P., Gobi, G., Baskaran, P. et al. Effect of Leishman Stain on Synthesis, Characteristics, and Morphology of Zn0.15Cd0.8S0.8 Thin Film. J. Electron. Mater. 49, 4160–4167 (2020). https://doi.org/10.1007/s11664-020-08130-w

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  • DOI: https://doi.org/10.1007/s11664-020-08130-w

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