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Influence of Magnetic Field and Bias Voltage on the Thermal Conductivity and Seebeck Coefficient of AA-Stacked Bilayer SiC

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Abstract

Thermoelectric properties of AA-stacked bilayer SiC in presence of a magnetic field and a bias voltage were studied using the tight binding model. Green function method was applied to calculate thermal conductivity and Seebeck coefficient under the influence of bias voltage and external magnetic field within the linear response theory. We obtained that the effect of bias voltage is to increase energy gap of the bilayer SiC, unlike the magnetic field effect. Thermal conductivity and Seebeck coefficient of bilayer SiC depend on magnetic field and bias voltage. We obtained that the Seebeck coefficient sign is positive, which means the charge carriers are holes, in the whole range of temperature for different values of applied bias voltage and applied magnetic field. Also, the peak appeared in temperature dependence of thermal conductivity, Seebeck coefficient, and figure of merit ZT decreased with bias voltage. Finally, we investigated the effects of applying magnetic field on Seebeck coefficient and thermal conductivity of AA-stacked bilayer SiC in details.

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Authors and Affiliations

  1. Physics Department, Faculty of Science, University of Kurdistan, Sanandaj, 66177-15175, Iran

    Mona Abdi & Bandar Astinchap

  2. Research Center for Nanotechnology, University of Kurdistan, Sanandaj, 66177-15175, Iran

    Mona Abdi & Bandar Astinchap

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  1. Mona Abdi
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  2. Bandar Astinchap
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Correspondence to Bandar Astinchap.

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Abdi, M., Astinchap, B. Influence of Magnetic Field and Bias Voltage on the Thermal Conductivity and Seebeck Coefficient of AA-Stacked Bilayer SiC. Silicon 13, 1223–1230 (2021). https://doi.org/10.1007/s12633-020-00501-6

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  • DOI: https://doi.org/10.1007/s12633-020-00501-6

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