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Structural optimization and parametric analysis of SOI optical slot waveguides

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Abstract

Slot waveguides based on silicon-on-insulator dielectric material are investigated theoretically for structural optimization with the aim of attaining the maximum light confinement with the minimum mode footprint inside the slot region. The effects of various geometrical parameters on the field confinement factor and effective mode area are examined to determine the performance of dielectric vertical- and horizontal-slot waveguides. Parametric analysis for the optimization of the slot waveguides is carried out using the finite element method (FEM). The theoretical and FEM-based electric/magnetic field components and Poynting vector profiles are compared for both types of slot waveguide. Furthermore, a cross-slot structure is proposed based on the optimized parameters found for the vertical- and horizontal-slot waveguides, to guide both quasi-transverse electric (TE) and quasi-transverse magnetic (TM) modes simultaneously. For the cross-slot waveguide with optimized dimensions, the numerical simulation predicts a confinement factor of ~ 34.16% with an effective mode area of ~ 0.438 μm2 in the quasi-TE mode and ~ 30.12% with 0.480 μm2 in the quasi-TM mode.

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Authors and Affiliations

  1. Department of Electronics Engineering, Indian Institute of Technology (Indian School of Mines), Dhanbad, Jharkhand, India

    Ritu Raj Singh

  2. Department of Electronics and Communication Engineering, Indian Institute of Information Technology Ranchi, Ranchi, Jharkhand, India

    Ritu Raj Singh

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Singh, R.R. Structural optimization and parametric analysis of SOI optical slot waveguides. J Comput Electron 19, 825–839 (2020). https://doi.org/10.1007/s10825-020-01473-x

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