Towards high performance visible-blind narrowband near-infrared photodetectors with integrated perovskite light filter
Introduction
Near-infrared photodetectors have attracted a lot of attention recently because of their many unique applications in industry and scientific research, examples include military reconnaissance, medical monitoring, environmental testing, industrial process control, remote monitoring, security inspection, spectroscopy, communications, medical and chemical / biological sensing [1], [2], [3], [4], [5], [6], [7], [8], [9], [10], [11], [12], [13]. There have been many reports about broadband photodetectors capable of detecting light in the NIR region [14], [15], [16], [17], [18], [19]. Generally, a broadband photodetector can detect both visible and NIR light simultaneously. A large number of metal phthalocyanines comprising of tin phthalocyanine, lead phthalocyanine, nickel phthalocyanine, etc. have been widely used to fabricate photodetectors being able to detect NIR light. However, these materials inevitably absorb visible light as well, the challenge is to fabricate a photodetector which can only perform narrow-band detection on NIR light. To date, to the best of our knowledge, most reports focus on broad spectral response and high performance, leaving the potential of visible-blind near-infrared photodetection unexplored. For a visible-blind near-infrared organic photodetector (VBNIR-OPD), it requires a photodetector that has none or insignificant response to the visible area and can accurately identify emission signals within as small as tens nanometers of wavelength difference, meanwhile eliminating background noise caused by tissue autofluorescence and excitation signals [20], [21], [22], [23], [24]. The design of this photodetector will not only overcome the difficulty of increasing the noise of the output signal in near-infrared light detection due to the effect of visible light, but it will also be suitable for making optical fire detection systems [25], [26], [27].
The general strategy for achieving near-infrared visible-blind narrow-band photodetection is to combine a band-pass filter with a sensitive wideband photodetector [28], [29]. However, there are limitations. For example, it suffers from the high costs associated with optical filters, the problem of complex optical system integration and debugging. Moreover, because of its inherent limitations, current commercial band-pass filters cannot meet increasingly stringent application requirements in many cases. By using the relationship between the wavelength of light and the length of charge collection, Ardalan Armin et al. reported a narrow-band NIR photodiode based on a polymer/fullerene with sub-100 nm FWHM. Still, the low external quantum efficiency (EQE) of the devices may severely limit their applications, because to maintain the narrow-band optical response, most of the carriers generated by NIR light must be lost together with those generated by visible light [30]. Also, Shen et al. demonstrated a visible-blind, filterless, NIR narrow-band photodetector by using a 4 µm thick nanocomposite absorber layer made of polymer-fullerene: lead sulfide (PbS) quantum dots (QDs) [31], [32]. The device exhibits a high photoresponsivity and visible rejection ratio due to a photoconductive gain yielded by the PbS QDs. Quite recently, Monika Kataria et al. have provided a light-weight, filterless design for wearable visible-blind near-infrared photodetectors by using hybrid upconversion nanoparticles (UCNPs)/graphene structure [33]. The photodetector achieved an ultra-high photoresponsivity of 800 A/W. These reports have made significant contributions to narrow-band photoelectric detection, but may not be suitable for future optoelectronic device development considering their sophisticated design. Perovskite materials have drawn substantial attention due to their easy fabrication, low cost, economic prospect and good carrier transport property [34]. A possible solution for a simpler design of a visible-blind NIR photodetector is to use perovskite film as a light filtering layer because it has a strong absorption in the visible region but a weak absorption in the NIR region [35], [36].
In this work, we report on a visible-blind near-infrared photodetector by employing a perovskite light filtering layer. The device we fabricated has a negligible photoresponsivity to the wavelengths in the visible light region but high value in NIR region. This work indicates a new direction for the future development of high-performance visible blind NIR photodetectors.
Section snippets
Materials and device fabrication
The device structure of visible-blind near-infrared photodetectors (VBNIR-OPD) and Fig. 1 showed the chemical structure of BCP, PbPc and C60. Fullerene (C60) and lead Phthalocyanine (PbPc) were purchased from Tci, and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) from Jilin OLED Co. Ltd. China, all of which were used as received. Before fabricating the device, the patterned ITO substrate is ultrasonically cleaned with acetone, ethanol, and deionized water, then dried with blowing
Results and discussion
To confirm the crystalline performance of perovskite film, we performed an XRD measurement of the film. Fig. 2a shows the XRD patterns of the perovskite film fabricated on the Si/SiO2 substrate, the high diffraction peaks at 14.08°, 28.41°, 31.85° and 43.19° correspond to the (1 1 0), (2 2 0), (3 1 0) and (3 3 0) crystal orientations of CH3NH3PbI3, respectively. The expected orthorhombic crystal structure and high crystallinity of the halide perovskite film are exhibited. It is worth noting
Conclusion
In summary, we have demonstrated a high performance, visible-blind narrowband NIR photodetector by using perovskite thin film (~600 nm) as a light filtering layer. Compare with the NIR-OPD without perovskite light filtering layer, the VBNIR-OPD has a negligible photoresponsivity to the wavelengths in the visible light region but high in NIR region of from 780 to 900 nm. The photo response spectral is picked at ~800 nm with a high photoresponsivity of 160 mA/W, a large EQE of 24.8%, and narrow
Author contributions
The manuscript was written through contributions of all authors. All authors have given approval to the final version of the manuscript.
Declaration of Competing Interest
The authors declare no competing financial interest.
Acknowledgement
The authors gratefully acknowledge the Natural Science Foundation of Zhejiang Province Grant No. LY18F050009, and National Key R&D Program of China Grant No. 2016YFF0203605 for financial support.
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