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High slew rate and low output resistance class-AB flipped voltage follower cell with increased current driving capability

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Abstract

The paper proposes a class-AB flipped voltage follower (FVF) cell, in which the bulk-driven transistor is used as an input transistor with a replica-biased scheme to eliminate the DC level shift while a cascoding transistor is used to reduce the output resistance. The proposed FVF cell has several advantages such as low output resistance, approximately unity voltage gain, high symmetrical slew rate, high current sourcing capability, high current sinking capability and wide bandwidth. The proposed FVF cell has been simulated in Cadence Virtuoso Analog Design Environment using BSIM3v3 180 nm CMOS technology with a power supply voltage of 1.2 V.

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Acknowledgement

This work was supported by the Council of Scientific and Industrial Research (CSIR), New Delhi, India under Grant no. 09/677(0039)/2019-EMR-I.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Thapar Institute of Engineering and Technology, Patiala, India

    CAFFEY JINDAL & RISHIKESH PANDEY

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  1. CAFFEY JINDAL
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  2. RISHIKESH PANDEY
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Correspondence to CAFFEY JINDAL.

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JINDAL, C., PANDEY, R. High slew rate and low output resistance class-AB flipped voltage follower cell with increased current driving capability. Sādhanā 45, 108 (2020). https://doi.org/10.1007/s12046-020-01350-0

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  • DOI: https://doi.org/10.1007/s12046-020-01350-0

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