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Developing Methods for Wet Chemical Etching of a Separation Mesa Structure during Creation of Multijunction Solar Cells

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Abstract

The postgrowth processing of mesa structures for multijunction solar cells based on GaInP/GaInAs/Ge heterostructure has been studied. Methods of wet chemical and electrochemical etching are considered, and a technology of forming a separation mesa structure is proposed that ensures improved surface quality and profile of the side wall of a mesa for heterostructures with various compositions of layers.

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Funding

This study was supported in part by the Russian Science Foundation, project no. 17-79-30035.

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Authors and Affiliations

  1. Ioffe Institute, Russian Academy of Sciences, 194021, St. Petersburg, Russia

    A. V. Malevskaya, N. D. Il’inskaya & V. M. Andreev

Authors
  1. A. V. Malevskaya
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  2. N. D. Il’inskaya
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  3. V. M. Andreev
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Correspondence to A. V. Malevskaya.

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The authors declare that they have no conflict of interest.

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Translated by P. Pozdeev

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Malevskaya, A.V., Il’inskaya, N.D. & Andreev, V.M. Developing Methods for Wet Chemical Etching of a Separation Mesa Structure during Creation of Multijunction Solar Cells. Tech. Phys. Lett. 45, 1230–1232 (2019). https://doi.org/10.1134/S1063785019120241

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  • DOI: https://doi.org/10.1134/S1063785019120241

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