Abstract
Efficiency of the transmission of high-frequency signals by semiconductor plasma antennas based on Ge and Si single crystals with surface nonequilibrium electron-hole plasma generated by laser diode radiation has been experimentally studied. Dependences of the amplitude of a radiated 6- to 7.5-GHz microwave signal on the laser power and size of the laser-irradiated region on the semiconductor transmitting dipole antenna are determined. It is shown that a more than tenfold increase can be achieved in the efficiency of useful signal transmission by the plasma antenna formed in Ge crystals.
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Translated by P. Pozdeev
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Bogachev, N.N., Gusein-zade, N.G., Zhluktova, I.V. et al. Semiconductor Plasma Antennas Formed by Laser Radiation. Tech. Phys. Lett. 45, 1223–1225 (2019). https://doi.org/10.1134/S1063785019120174
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DOI: https://doi.org/10.1134/S1063785019120174