Abstract
The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator technology has been numerically simulated. It is established that the RTN amplitude in the subthreshold region of gate voltages for a FinFET with a trapezoidal cross section of channel is significantly lower than that for the transistor with rectangular cross section of a channel. In addition, under the same conditions, the RTN amplitude at the threshold gate voltage in a junctionless FinFET is significantly lower than that in planar fully depleted and in usual FinFET.
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REFERENCES
D. Marcovic, C. W. Cheng, L. P. Alarcon, T.-T. Liu, and J. M. Rabaey, Proc. IEEE 98, 237 (2010).
I. Ferain, C. A. Colinge, and J.-P. Colinge, Nature (London, U.K.) 479 (7373), 310 (2011).
Z. A. Atamuratova, A. Yusupov, B. O. Khalikberdiev, and A. E. Atamuratov, Tech. Phys. 64, 1006 (2019).
A. E. Atamuratov, Z. A. Atamuratova, A. Yusupov, and A. Ghani, Results Phys. 11, 656 (2018).
J. P. Campbell, L. C. Yul, K. P. Cheung, J. Qin, J. S. Suehle, A. Oates, and K. Sheng, in Proceedings of the IEEE International Conference on IC Design and Technology (ICICDT) (IEEE, 2009), p. 17.
B. C. Paz, F. Ávila-Herrera, A. Cerdeira, and M. A. Pavanello, Semicond. Sci. Technol. 30, 055011 (2015).
N. Jaiswal and A. Kranti, IEEE Trans. Electron Dev. 65, 3669 (2018).
P. Razavi, N. Dehdashti-Akhavan, R. Yu, G. Fagas, I. Ferain, and J.-P. Colinge, in Proceedings of the International Conference on Solid State Devices and Materials, Nagoya,2011, p. 106.
M.-L. Fan, S.-Y. Yang, V. P. Hu, Y.-N. Chen, P. Su, and C.-T. Chuang, Microelectron. Reliab. 54, 698 (2014).
A. N. Nazarov, I. Ferain, N. D. Akhavan, P. Razavi, R. Yu, and J. P. Colinge, Appl. Phys. Lett. 98, 092111 (2011).
D. Roy and A. Biswas, Superlatt. Microstruct. 97, 140 (2016).
A. E. Abdikarimov, A. Yusupov, and A. E. Atamuratov, Tech. Phys. Lett. 44, 962 (2018).
A. E. Atamuratov, A. E. Abdikarimov, M. M. Khalilloev, Z. A. Atamuratova, R. Rahmanov, A. Garcia-Loureiro, and A. Yusupov, Nanosyst.: Phys. Chem. Mater. 8, 71 (2017).
A. E. Abdikarimov, A. G. Indalecio, E. Comesana, N. Seoane, K. Kalna, A. J. Garcia-Loureiro, and A. E. Atamuratov, in Proceedings of the 17th International Workshop on Computational Electronics,Paris, 2014, p. 247. www.iwce.org/iwce/browse/iwce-17/abstracts.html.
http://www.synopsys.com.
A. J. García-Loureiro, N. Seoane, M. Aldegunde, R. Valín, A. Asenov, A. Martinez, and K. Kalna, IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst. 30, 841 (2011).
A. Asenov, A. Brown, and J. Watling, Solid-State Electron. 47, 1141 (2003).
S. Barraud, M. Berthomé, R. Coquand, M. Cassé, T. Ernst, M.-P. Samson, P. Perreau, K. K. Bourdelle, O. Faynot, and T. Poiroux, IEEE Electron Dev. Lett. 33, 1225 (2012).
L. Gerrer, S. M. Amoroso, R. Hussin, and A. Asenov, Microelectron. Reliab. 54, 1749 (2014).
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Khalilloev, M.M., Jabbarova, B.O. & Nasirov, A.A. The Influence of Fin Shape on the Amplitude of Random Telegraph Noise in the Subthreshold Regime of a Junctionless FinFET. Tech. Phys. Lett. 45, 1245–1248 (2019). https://doi.org/10.1134/S1063785019120216
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DOI: https://doi.org/10.1134/S1063785019120216