Abstract
It has been shown experimentally that an electron-hole plasma forms in the surface layer at a depth of ~30 nm, followed by a transition to the metallic state, when GaAs is exposed to femtosecond laser pulses with an intensity close to the melting threshold. This phenomenon is observed when laser pulses with photon energies are both smaller and larger than the band gap. The formation of an electron-hole plasma and an absorbing layer with metallic properties is mainly due to the mechanism of avalanche ionization by electron impact.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
REFERENCES
Shank, C.V., Yen, R., and Hirlimann, C., Phys. Rev. Lett., 1983, vol. 50, p. 454.
Tanaka, T., Harata, A., and Sawada, T., J. Appl. Phys., 1997, vol. 82, p. 4033.
Sokolowski-Tinten, K., Bialkowski, J., Boring, M., Cavalleri, A., and von der Linde, D., Phys. Rev. B: Condens. Matter Mater. Phys., 1998, vol. 58, p. R11805.
Sokolowski-Tinten, K. and von der Linde, D., Phys. Rev. B: Condens. Matter Mater. Phys., 2000, vol. 61, p. 2643.
Callan, J., Kim, A.M.-T., Huang, L., and Mazur, E., Chem. Phys., 2000, vol. 251, p. 167.
Bonse, J., Brzezinka, K.-W., and Meixner, A.J., Appl. Surf. Sci., 2004, vol. 221, p. 215.
Ionin, A.A., Kudryashov, S.I., Seleznev, L.V., and Sinitsyn, D.V., JETP Lett., 2011, vol. 94, p. 34.
Gunnella, R., Zgrablic, G., Giangrisostomi, E., D’Amico, F., Principi, E., Masciovecchio, C., Di Cicco, A., and Parmigiani, F., Phys. Rev. B, 2016, vol. 94, 155427.
Agranat, M.B., Anisimov, S.I., Ashitkov, S.I., Ovchinnikov, A.V., Kondratenko, P.S., Sitnikov, D.S., and Fortov, V.E., JETP Lett., 2006, vol. 83, no. 11, p. 501.
Agranat, M.B., Ashitkov, S.I., Ivanov, A.A., Konyashchenko, A.V., Ovchinnikov, A.V., and Fortov, V.E., Quantum Electron., 2004, vol. 34, p. 506.
Temnov, V.V., Sokolowski-Tinten, K., Zhou, P., and von der Linde, D., J. Opt. Soc. Am. B, 2006, vol. 23, p. 1954.
Sitnikov, D.S., Komarov, P.S., Ovchinnikov, A.V., and Ashitkov, S.I., Tech. Phys., 2009, vol. 54, no. 4, p. 520.
Morikami, H., Yoneda, H., Ueda, K., and More, R.M., Phys. Rev. E: Stat., Nonlinear, Soft Matter Phys., 2004, vol. 70, 035401.
Ashitkov, S.I., Komarov, P.S., Struleva, E.V., Yurkevich, A.A., and Agranat, M.B., High Temp., 2016, vol. 54, no. 6, p. 899.
Palik, E.D., Handbook of Optical Constants of Solids II, San Diego: Academic, 1991.
Schaffer, C.B., Brodeur, A., and Mazur, E., Measurement Sci. Technol., 2001, vol. 12, no. 11, p. 1784.
ACKNOWLEDGMENTS
All of the experimental work was performed on a unique terawatt chrome-forsterite laser system at the Laser Femtosecond Complex Center for Collective Use, Joint Institute for High Temperatures, Russian Academy of Sciences.
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Ashitkov, S.I., Ovchinnikov, A.V., Sitnikov, D.S. et al. Formation of an Absorbing Layer and Superfast Gallium Arsenide Transition in the Metal State under the Action of Femtosecond Laser Pulses. High Temp 57, 859–862 (2019). https://doi.org/10.1134/S0018151X19060038
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S0018151X19060038