First-principle calculations on the Al/L12-Al3Zr heterogeneous nucleation interface
Introduction
Due to the good thermal and electrical conductivities, low density, and corrosion resistance, Al and its alloys have been widely applied in many industries such as engineering materials for structural applications [1]. The fine grains play a key role in improving the soundness and mechanical properties of Al alloy castings [2,3]. During the solidification processes, adding grain refiner or solute is still the most common method to obtain the refined grain structure. By the addition of Zr, the effective refinement of Al alloys was found [4]. As is known, the Al3Zr with D023 structure is the most stable, whereas L12 structure is metastable [5]. By the addition of Cu and Ni atoms, the L12-Al3Zr can exist stably at temperatures over 900 °C for Cu and 850 °C for Ni [6]. In the Al-X-Zr(X = Cu, Ni) alloys, the solidification process begins with the formation of L12-Al3Zr phase, and is then followed by the heterogeneous nucleation of α-Al on the L12-Al3Zr, and the lattice match of (100)Al[010]Al||(100)Al3Zr-L12 [010]Al3Zr-L12 has also been reported [7].
All the abovementioned investigations could not reveal whether L12-Al3Zr is an effective grain refiner, since the atomic interaction between the Al and L12-Al3Zr interface was not considered in these studies. The interfacial properties, such as the interfacial energy, work of adhesion and electronic structure can reflect the nucleation potency between the nucleating crystal and the substrate [2,3]. Unfortunately, even the simplest solid-solid interfacial energy is unavailable yet, due to the difficulties in the experimental studies. Therefore, it is of great significance to investigate the interfacial properties at atomic scale by theoretical calculations in order to identify the possibility of L12-Al3Zr as a heterogeneous nucleation substrate of α-Al.
First-principle calculation can provide the quantitative information for the solid-solid interface at atomic and electronic levels, and it is therefore the best choice to study the nucleation ability of a potent heterogeneous substrate [8]. Recently, calculations on the Al/Al3Ti [9], Al/NbB2 [10], Al/Al3Nb [11], and Al/TiB2 [12] interfaces were reported, and the respective optimal atomic stacking at the interface were determined. However, until now, there is still no information about the Al/Al3Zr interfacial properties, such as the atomic stacking, adhesion work, interfacial energy and the electronic structure of the interface. Therefore, it is necessary to make these clear to help us understand the heterogeneous nucleation mechanism.
In this paper, we focus on the Al(100)/L12-Al3Zr(100) interface, since Al(100) and L12-Al3Zr(100) are low indexed planes with a small lattice mismatch. The paper is arranged as follows: we describe the computational details in Section 2; the bulk and surface properties were calculated and discussed in Section 3; In section 4, the results of the interface were presented. Finally, the conclusions were given in Section 5.
Section snippets
Computational methodology
In this work, all the calculations are performed by the CASTEP [13,14] package, based on DFT theory. The Kohn-Sham equation [15] is solved by the self-consistent field (SCF) procedure to achieve the electronic minimization process. And the threshold of SCF convergence is set to 5 × 10−7 eV/atom. Ultrasoft pseudopotentials [16,17] are applied for all the atoms in the system to describe the ionic cores. The valence electrons are 3s23p1 for Al and 4s24p64d25s2 for Zr. The
Bulk properties calculations
The bulk properties of pure Al and L12-Al3Zr crystals including lattice parameter, elastic constants, and bulk modulus were calculated and listed in Table 1. It is clear to find out that the GGA-PBE results are in accordance with the experimental and other theoretical data. For pure Al, the lattice constant is 4.048 Å, which is almost the same as the experimental value (4.05 Å) [22]. For the L12-Al3Zr bulk, unfortunately, no experimental data is available, but the lattice parameter and the bulk
Interface models
The Al/Al3Zr interfaces were constructed by seven layered Al(100) slab and nine layered Al3Zr(100) slab with periodic boundary conditions according to the abovementioned surface convergence test, and a vacuum of 10 Å was also added on top of the interface models to avoid the interaction between the free surfaces of Al and Al3Zr slabs. The lattice mismatch between the Al(100) and Al3Zr(100) plane is about 1.67% in this work. In Fig. 2 three different stacking sequences of Al atoms in Al(100)
Conclusion
Based on the density functional theory, the first principle calculations of interface properties of Al(100)/Al3Zr(100) were carried out. The surface energies, adhesion work, interfacial energy, charge density difference and PDOS were calculated to investigate the interface stability and heterogeneous nucleation potency of Al3Zr particle as the substrate for α-Al grains in Al alloy. The main conclusions are listed as follows:
- (1)
From the convergence test of Al(100) and Al3Zr(100) surfaces, it shows
Data availability statement
All data included in this study are available upon request by contact with the corresponding author.
Declaration of competing interest
The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
Acknowledgement
This work is sponsored by National Natural Science Foundation of China (Grant Nos. 51671134, 51671133, and 51171115), National Key Research and Development Program of China (Grant Nos. 2016YFB0701202,2017YFB0305300), and the Colleges and Universities Twenty Terms Foundation of Jinan City (Grant No. 2019GXRC034).
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