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Determination of carrier lifetime in thermally evaporated In2S3 thin films by light induced transient grating technique

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Abstract

In2S3 thin films were deposited onto soda lime glass substrates using thermal evaporation technique at a constant substrate temperature of 300 °C and the films were annealed in a sulfur ambient at 250 °C and 300 °C for 1 h. Light induced transient grating (LITG) technique was used to determine the carrier lifetime in In2S3 thin films. The determined carrier lifetime values for different excitation energy densities, I0 = 0.06–1.64 mJ/cm2 decreased from 206  to 18 ps and 150 to 14 ps for the films annealed at 250 °C and 300 °C respectively. Further, the bimolecular, Auger recombination coefficients and diffusion coefficient were determined in the films. The observed bimolecular carrier recombination origin was explained by interface and Auger recombination processes.

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Acknowledgements

One of the authors, S. Rasool is thankful to the University Grants Commission (UGC), New Delhi for the financial assistance via the “UGC-BSR fellowship”. The authors, Prof. K.T. Ramakrishna Reddy and Prof. M.S. Tivanov wish to acknowledge the Dept. of Science and Technology, Govt. of India (Grant No: DST/INT/BLR/P-30/2019) and the State Committee on Science and Technology of the Republic of Belarus (Grant No: F19INDG-008). P. Ščajev acknowledges the financial support provided by the Research Council of Lithuania under the project No. S-MIP-19-34.

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Authors and Affiliations

  1. Solar Photovoltaic Laboratory, Department of Physics, Sri Venkateswara University, Tirupati, Andhra Pradesh, 517 502, India

    S. Rasool, K. Saritha & K. T. Ramakrishna Reddy

  2. Faculty of Physics, Belarusian State University, Nezavisimosti 4 Av, 220030, Minsk, Belarus

    I. Svito & M. S.  Tivanov

  3. Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio ave. 3, LT-10257, Vilnius, Lithuania

    P.  Ščajev & V. Grivickas

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  1. S. Rasool
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Rasool, S.,  Ščajev, P., Saritha, K. et al. Determination of carrier lifetime in thermally evaporated In2S3 thin films by light induced transient grating technique. Appl. Phys. A 126, 312 (2020). https://doi.org/10.1007/s00339-020-03495-5

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