Investigation of electrical and capacitance- voltage characteristics of GO/TiO2/n-Si MOS device

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Abstract

In this paper electrical analysis GO/TiO2/Si MOS junction was performed. Current–voltage (I–V) characteristics of diode were analyzed at 298–398 K. Several parameters such as ideality factor (η), barrier height (φB), rectification ratio (RR), series and shunt resistances (RS& Rsh) were estimated from I–V plots. The results showed that the MOS junction obeyed the thermionic emission phenomenon. In addition, capacitance – voltage (C–V) were measured at voltage range (−2Vto+2 V), at temperature range of (233–363 K) and at different frequencies. At low frequency 10 Hz revealed that negative capacitance of capacitor. A negative capacitance is due to an inductive behavior of studied materials. Moreover, at higher frequency, f = 2 × 107 Hz, capacitance increases slightly with the increase of temperature and the interface states (Nss) cannot pursue ac signal and gives the geometrical capacitance values.

Introduction

Metal-oxide-semiconductor (MOS) devices attract attention because of their interesting electrical and optical properties [1]. Metal-oxide-semiconductor (MOS) is constructed of a substrate, semiconductor, and thin oxide layer. Semiconductor devices are such as (MS), MIS Schottky diodes and MOS capacitors MOSFFTs, diodes and memories [[2], [3], [4], [5], [6], [7], [8], [9]]. In the device operation Metal-semiconductor interfaces play an important role, where, as a bad-quality interface can reduce the device act. TiO2 thin films attract the attention due to its prevalent applications related to photonic crystals, memory devices, solar cells and microelectronics [[10], [11], [12]]. TiO2 is an n-type semiconductor, has a refractive index value equals about 2.6 and has good steadiness with Si. Also, its dielectric constant ranges from (16–100) while its wide band gap is around 3.5 eV [13]. Moreover, beside of the favored properties of TiO2, it is extensively evaluated due to its properties like that chemical stability and non-toxicity [14]. In addition, the method of preparation for TiO2thin films is important because the method may affect structural and optical properties of the film. MOS assemblies with a thin film of oxide or insulator are prepared by inserting an interfacial thin film such asBi4Ti3O12, SiO2, TiO2, Si3N4, SnO2, HfO2, amid metal and semiconductor [4,15,16]. Also, some parameters such as density of states or traps (Nss) situated at interfacial layer, doping concentration, series resistance (Rs) of structure, homogeneities of Schottky barrier height, frequency and temperature, electric field and polarization procedures can affect on the quality of these structures [17,18]. During the decade, Graphene sheet and its derivatives have generated great interest and activity in most areas of science and engineering due to their unique structure and unprecedented physical and chemical properties. Graphene has demonstrated the combination of superlative mechanical, thermal and electronic properties such as quantum hall effect, high carrier mobility under ambient condition ( 250.000 cm2V−1s−1) good optical transparency ( 97.7%). Oxide of Graphene is a distinct material can be considered as a single molecular structure of graphite with different oxygen containing functionalities [[19], [20], [21]]. Graphene (GR) consists of a monolayer of carbon atoms in the form of hexagonal lattice, bonded to each other covalently. So, this assembly provides brilliant thermal conductivity, electrical conductivity, and high mechanical strength and big particular surface area of GR [22,23] manufacture of GR a hopeful nominee for many applications in energy storage, sensors [24,25] and transfer [26,27], nanoelectronics [28], super capacitors [29] and composite materials [30]. Among different fields of material science that were affected by the extended study on Graphene was the word of electrochemical energy storage devices. The aim of this work is preparing GO/TiO2/Si MOS junction. Studying I–V characteristics and calculating different parameters like as rectification ratio (RR), barrier height (φB.), ideality factor (η), series and shunt resistances (RS& Rsh). Also, analyzing C–V measurements as a function of voltage, frequency and temperature.

Section snippets

Experimental works

In this article, manufacture GO/TiO2/n-Si structure was carried out as the subsequent. Washing n-type silicon substrates by conventional technique to remove all pollution and oxide layer from its surface. TiO2 thin films deposited on silicon substrates, and some drops of PVA were spin coated on TiO2/n-Si surface for well symmetry distributed. In the last stage, we put the PVA/TiO2/p-Si samples in the furnace at temperature 200 °C for 30 min, then at 500 °C to convert PVA to graphene oxide as

X-ray diffraction

Fig. 2 illustrates X-diffraction manner of (GO/TiO2/n-Si device). It is obvious that, all observed peaks were indexed in a pattern for different constituents. A manner denoted only for the essential structure of Si, TiO2 and GO without any additional structure. Diffraction peaks consistent to GO, TiO2 and Si are good matched with a PDF cards 00-047-1071, 98-005-3997 and 01-070-5680respectively.

Scanning electron microscope (SEM)

Fig. 3 shows SEM image of GO/TiO2/n-Si MOS junction, the films are comprising of spherical particles

Conclusion

GO/TiO2/n-Si junction is synthesized by sole gel and heating furnace technique. XRD analysis ensured that the main structure of Si, TiO2 and GO in diode without another structure. SEM revealed that spherical particles agglomerated together with diameter range 80–132 nm. I–V characteristics were investigated at temperature (298–398 K) and frequency range (10–2x107 Hz). Effect of temperature on ideality factor, barrier height and series resistance, were analyzed. Barrier height increased with an

Declaration of competing interest

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

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