Strain-induced enhancement of the Seebeck effect in magnetic tunneling junctions via interface resonant tunneling: Ab initio study

Kaoru Yamamoto, Keisuke Masuda, Ken-ichi Uchida, and Yoshio Miura
Phys. Rev. B 101, 094430 – Published 25 March 2020

Abstract

We investigate the thermoelectric properties of Fe/MgO/Fe(001) magnetic tunnel junctions (MTJs) by means of the linear-response theory combined with a first-principles-based Landauer-Büttiker approach. We find that the Seebeck coefficient of Fe/MgO/Fe(001) MTJs strongly depends on the barrier thickness and the tetragonal distortion. A compressive tetragonal distortion of the in-plane lattice parameter in the MTJs provides interface resonant states just above the Fermi energy. This causes resonant tunneling in the MTJs and significantly enhances the Seebeck coefficient when the thickness of the MgO barrier is around 1 nm (four or five atomic layers of MgO). Moreover, an extensive tetragonal distortion of the in-plane lattice parameter pushes the interface states away from the Fermi energy, leading to a reduction of the Seebeck coefficient. Furthermore, we find that the interface resonant tunneling enhances the power factor of the MTJs for the compressive distortion. These results indicate that control of the barrier thickness and the tetragonal distortion will be effective for maximizing the thermoelectric properties of MTJs.

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  • Received 3 December 2019
  • Revised 28 February 2020
  • Accepted 28 February 2020

DOI:https://doi.org/10.1103/PhysRevB.101.094430

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Kaoru Yamamoto1,*, Keisuke Masuda1, Ken-ichi Uchida1,2,3,4,5, and Yoshio Miura1,2,6

  • 1Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science, Tsukuba 305-0047, Japan
  • 2Research and Services Division of Materials Data and Integrated System, National Institute for Materials Science, Tsukuba 305-0047, Japan
  • 3Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
  • 4Center for Spintronics Research Network, Tohoku University, Sendai 980-8577, Japan
  • 5Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
  • 6Center for Spintronics Research Network, Osaka University, Toyonaka, Osaka 560-8531, Japan

  • *Yamamoto.Kaoru@nims.go.jp

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Issue

Vol. 101, Iss. 9 — 1 March 2020

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