Abstract
An active area based on InGaAs/InGaAlAs superlattice for laser diodes operating in the spectral range between 1535 and 1565 nm is proposed and realized practically. It is demonstrated that using a superlattice increases the mode gain at the same values of the pump-diode current density relative to a typical active-area design based on an array of InGaAs quantum wells.
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REFERENCES
Z. I. Alferov, Semiconductors 32, 1 (1998). https://doi.org/10.1134/1.1187350
G. Park et al., IEEE Photon. Technol. Lett. 12, 230 (2000). https://doi.org/10.1109/68.826897
M. Ortsiefer et al., Proc. SPIE 8276, 82760A (2012).
A. V. Babichev et al., IEEE J. Quantum Electron. 53 (6), 1 (2017). https://doi.org/10.1109/JQE.2017.2752700
A. V. Babichev et al., RF Patent No. 188629 (2019).
S. Spiga et al., in Proceedings of the 5th IEEE Photonics Soc. Opt. Interconnects Conference OI,2016, p. 14.
E. S. Kolodeznyi, S. S. Rochas, A. S. Kurochkin, A. V. Babichev, I. I. Novikov, A. G. Gladyshev, L. Ya. Karachinskii, D. V. Denisov, Yu. K. Bobretsova, A. A. Klimov, S. A. Blokhin, K. O. Voropaev, and A. S. Ionov, Opt. Spectrosc. 125, 238 (2018). https://doi.org/10.1134/S0030400X18080143
H. C. Casey and M. B. Panish, Heterostructure Lasers, Part B (Academic, New York, 1978).
L. A. Coldren, S. W. Corzine, and M. L. Mashanovitch, Diode Lasers and Photonic Integrated Circuits (Wiley, New York, 2012).
Funding
This research was supported by the Ministry of Science and Education of the Russian Federation, Federal Targeted Program “Research and Development in Priority Directions of the Development of the Scientific–Technological Complex of Russia for 2014–2020,” subsidy agreement no. 14.578.21.0253 of September 26, 2017, unique identifier RFMEFI57817X0253.
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Translated by I. Shumai
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Karachinsky, L.Y., Novikov, I.I., Babichev, A.V. et al. Optical Gain in Laser Heterostructures with an Active Area Based on an InGaAs/InGaAlAs Superlattice. Opt. Spectrosc. 127, 1053–1056 (2019). https://doi.org/10.1134/S0030400X19120099
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DOI: https://doi.org/10.1134/S0030400X19120099