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Microstructures, interface reaction, and properties of Sn–Ag–Cu and Sn–Ag–Cu–0.5CuZnAl solders on Fe substrate

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Abstract

In this paper, microstructures, interface reaction, and stress–strain response of Sn–3.8Ag–0.7Cu and Sn–3.8Ag–0.7Cu–0.5CuZnAl solders on Fe substrate were investigated systematically. The interface reaction and the growth behavior of FeSn2 intermetallic compounds (IMC) at two solder joints interface after 250 °C soldering with 1 min, 10 min, and 60 min are shown. The results indicate that the growth rate of FeSn2 IMC of Sn–3.8Ag–0.7Cu/Fe solder joints was higher than that of Sn–3.8Ag–0.7Cu–0.5CuZnAl/Fe solder joints, the addition of 0.5% CuZnAl particles can decrease the growth rate of interfacial FeSn2 IMC layer with the reduction of elements diffusion coefficient. Based on finite element simulation, it is demonstrated that the addition of CuZnAl particles can decrease the von Mises stress and equivalent creep strain of Sn–3.8Ag–0.7Cu/Fe solder joints, due to the decrease of FeSn2 thickness with the addition of CuZnAl particles, which can enhance the reliability of Sn–3.8Ag–0.7Cu/Fe solder joints.

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Acknowledgements

The present work was carried out with the support of State Key Lab of Advanced Welding and Joining, Harbin Institute of Technology (AWJ-19Z04), and Six Talent Peaks Project in Jiangsu Province (XCL-022).

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Authors and Affiliations

  1. Zhengzhou Research Institute of Mechanical Engineering Co., LTD, Zhengzhou, 450001, China

    Liang Zhang & Wei-min Long

  2. School of Mechatronic Engineering, Jiangsu Normal University, Xuzhou, 221116, China

    Liang Zhang

  3. School of Material and Science Engineering, Jiangsu University of Science and Technology, Zhenjiang, 212003, China

    Feng-jiang Wang

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  1. Liang Zhang
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Correspondence to Liang Zhang or Wei-min Long.

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Zhang, L., Long, Wm. & Wang, Fj. Microstructures, interface reaction, and properties of Sn–Ag–Cu and Sn–Ag–Cu–0.5CuZnAl solders on Fe substrate. J Mater Sci: Mater Electron 31, 6645–6653 (2020). https://doi.org/10.1007/s10854-020-03220-1

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  • DOI: https://doi.org/10.1007/s10854-020-03220-1

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