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TWO-DIMENSIONAL MATERIALS

Doping on demand in 2D devices

Nature Electronics volume 3, pages 77–78 (2020)Cite this article

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High-resolution doping patterns can be reversibly written in van der Waals heterostructures using a combination of an electron beam and a back-gate voltage.

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Fig. 1: An electron-beam-induced doping technique for 2D devices.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, University of California, Los Angeles, CA, USA

    Sung-Joon Lee & Yu Huang

  2. Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, USA

    Zhaoyang Lin & Xiangfeng Duan

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  1. Sung-Joon Lee
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  2. Zhaoyang Lin
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  3. Xiangfeng Duan
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  4. Yu Huang
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Correspondence to Yu Huang.

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Lee, SJ., Lin, Z., Duan, X. et al. Doping on demand in 2D devices. Nat Electron 3, 77–78 (2020). https://doi.org/10.1038/s41928-020-0376-1

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