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Defect-Mediated Room Temperature Ferromagnetism in Lead-Free Ferroelectric Na0.5Bi0.5TiO3 Materials

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Abstract

The injection of ferromagnetism properties to ferroelectric materials is a feasible strategy for integrating new functionalities to create next-generation electronic devices. In this study, Ni-doped lead-free ferroelectric Na0.5Bi0.5TiO3 materials were synthesized using the sol-gel method. The optical band gap was reduced from 3.12 eV to 2.23 eV for un-doped and 9 mol% Ni-doped Na0.5Bi0.5TiO3 materials, respectively, when Ni was substituted at the Ti site. The Ni-doped Na0.5Bi0.5TiO3 materials exhibited ferromagnetism at room temperature. The maximum magnetization was found to be 0.91 μB/Ni. Our work offers insight into the role of transition metals in room temperature ferromagnetism in lead-free ferroelectric materials for the creation of new types of green multiferroic materials.

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Acknowledgments

This research is funded by the Hanoi University of Science and Technology (HUST) under project number T2018-TĐ-201.

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Correspondence to D. D. Dung.

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Dung, D.D., Dung, N.Q., Doan, N.B. et al. Defect-Mediated Room Temperature Ferromagnetism in Lead-Free Ferroelectric Na0.5Bi0.5TiO3 Materials. J Supercond Nov Magn 33, 911–920 (2020). https://doi.org/10.1007/s10948-019-05399-9

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