Abstract
The leakage conduction mechanisms for top-contact and bottom-contact pentacene-based organic thin film transistors (OTFTs) are studied. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design. For top-contact OTFTs, the dominant leakage conduction mechanism is via Schottky emission and the density of the leakage current increases significantly as the bias voltage increases. For bottom-contact OTFTs, the dominant leakage conduction mechanism is via displacement current. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design.
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The authors acknowledge the support of the Ministry of Science and Technology, Taiwan (Contract No. 106-2112-M-018-001-MY3) in the form of grants.
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Lin, YJ., Wu, CL., Chiang, CH. et al. Leakage conduction behavior for top- and bottom-contact pentacene thin film transistors. Indian J Phys 94, 797–800 (2020). https://doi.org/10.1007/s12648-019-01526-3
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DOI: https://doi.org/10.1007/s12648-019-01526-3