Abstract
Er3+-doped SrBi4Ti4O15-Bi4Ti3O12 (SBT-BIT-xEr3+, x = 0.00, 0.05, 0.10, 0.15 and 0.20) inter-growth ceramics were synthesized by the solid-state reaction method. Structural, electrical and up-conversion properties of SBT-BIT-xEr3+ were investigated. All samples showed a single phase of the orthorhombic structure. Raman spectroscopy indicated that the Er3+ substitution for Bi3+ at A sites of the pseudo-perovskite layer increases the lattice distortion of SBT-BIT-xEr3+ ceramics. The substitution of Bi3+ by Er3+ leads to a decrease of dielectric loss tanδ and an increase of conductivity activation energy. Piezoelectric constant d33 was slightly improved, but dielectric constant was decreased with the Er3 + doping. The SBT-BIT-xEr3+ ceramic with x = 0.15 exhibits the optimized electrical behavior (d33 ~17 pC/N, tanδ ~0.83%). Moreover, two bright green (532 and 548 nm) and one red (670 nm) emission bands were observed under the 980 nm excitation. Optimized emission intensity was also obtained when x = 0.15 for the SBT-BIT-xEr3+ ceramic. Therefore, this kind of ceramics ought to be promising candidates for multifunctional optoelectronic applications.
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Acknowledgements
This work was financially supported by the National Natural Science Foundation of China (Grant Nos. 51562014, 51602135, 51862016, 51762024 and 61671224), the Natural Science Foundation of Jiangxi Province (20171BAB216012), and the Foundation of Jiangxi Provincial Education Department (GJJ170789, GJJ170794 and GJJ170804).
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Liu, F., Jiang, X., Chen, C. et al. Structural, electrical and photoluminescence properties of Er3+-doped SrBi4Ti4O15—Bi4Ti3O12 inter-growth ceramics. Front. Mater. Sci. 13, 99–106 (2019). https://doi.org/10.1007/s11706-019-0454-3
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DOI: https://doi.org/10.1007/s11706-019-0454-3