Abstract
A Ta-modified layer was prepared on γ-TiAl by double-glow plasma surface metallurgy technique. Based on the results of high-temperature oxidation tests at 700, 800, and 900 °C, we studied the morphology, depth profile, and phase of γ-TiAl and Ta-modified layer by scanning electron microscopy, energy spectrum analysis, and X-ray diffraction analysis. Results showed that the Ta-modified layer was tightly bonded to the substrate without voids and cracks, consisting of the α-Ta outer layer and inner diffusion layer. It was found that the isothermal oxidation kinetic curves of the TiAl with the Ta-modified layer followed the parabolic rate law. Ta element promoted the diffusion of Al and formation of uniformly mixed Al2O3/Ta2O5 films, which prevented the inward diffusion of oxygen and help to the improved high-temperature oxidation resistance.
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Acknowledgements
This project was supported by Natural Science Foundation for Excellent Young Scientists of Jiangsu Province, China (Grant No. BK20180068), China Postdoctoral Science Foundation funded project (Grant No. 2018M630555), the Fundamental Research Funds for the Central Universities, China (Grant No. NS2018039), Opening Project of Key Laboratory of Materials Preparation and Protection for Harsh Environment (Nanjing University of Aeronautics and Astronautics), Ministry of Industry and Information Technology (Grant No. NJ2018009), Opening Project of Jiangsu Key Laboratory of Advanced Structural Materials and Application Technology (Grant No. ASMA201701).
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Wei, D., Zhang, P., Yan, Y. et al. High-Temperature Oxidation of Double-Glow Plasma Tantalum Alloying on γ-TiAl. Oxid Met 92, 337–351 (2019). https://doi.org/10.1007/s11085-019-09925-x
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DOI: https://doi.org/10.1007/s11085-019-09925-x