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Enhanced Effect of Ni3Se4 Modified CdS Nanorod for Efficient Hydrogen Production

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Abstract

CdS semiconductor is an excellent photo-catalyst for water-splitting to produce hydrogen. In this study, a binary photo-catalyst Ni3Se4@CdS enhancing hydrogen evolution activity under visible light irradiation was successfully synthesized and their photo-catalytic performance was investigated in detail by a series of characterization technologies. Ni3Se4@CdS sample reveals the higher hydrogen production activity compared with single Ni3Se4 or CdS samples under visible light-driven due to the existence of Ni3Se4 nanoparticels efficiently inhibits the recombination of electron–hole pairs for CdS nanorods as well as improves optical absorption density. Meanwhile, Ni3Se4@CdS catalyst shows the smaller over-potential than CdS nanorods, which also is an important factor to improve photo-catalytic hydrogen generation performance. The loading of Ni3Se4 particles improves the optical absorption intensity of CdS nanorods and enhances the photo-current response. At the same tine, Ni3Se4@CdS composite exhibits the smaller impedance compared with single CdS. Additionally, the surface elements component and specific surface area of the resulting samples also are studied. Finally, based on a great deal of research results, the possible mechanism of photo-catalytic water-splitting is speculated.

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Acknowledgements

This work was financially supported by the Safety Science and Technology Services for Local Economic Projects, Safety Pre-evaluation of 50,000 t/a Formaldehyde Projects in Ningdong Energy and Chemical Industry (NGY2017268).

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  1. School of Energy and Chemical Engineering, Ningxia Vocational Technical College of Industry and Commerce, Yinchuan, 750021, People’s Republic of China

    Hui’e Wang

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HW conceived and designed the experiments; HW performed the experiments wrote the paper.

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Correspondence to Hui’e Wang.

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Wang, H. Enhanced Effect of Ni3Se4 Modified CdS Nanorod for Efficient Hydrogen Production. Catal Lett 150, 849–860 (2020). https://doi.org/10.1007/s10562-019-02976-4

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