Abstract
La2Ti1.96V0.04O7 (LTVO) ceramics with Ti4+ ions partially substituted by V5+ ions at B sites show excellent electrical properties. The dopant V5+ ions do not result in collapse of the cell layered structure, but they lead to the enhanced distortions of BO6 oxygen octahedrons. Impedance spectroscopy reveals that a certain number of defects are formed due to the substitution of Ti4+ ions by V5+ ions. Meanwhile, the concentration of oxygen vacancies is decreased compared to pure La2Ti2O7 (LTO) ceramics. The direct current resistivity of LTVO ceramics obtained from alternating current (AC) impedance fitting at 600°C is 1.3 × 106 Ω cm, which is more than five times of that of the pure LTO at the same temperature (2.2 × 105 Ω cm). The substitution of Ti4+ ions by V5+ ions greatly enhances the piezoelectric coefficient, d33 = 4.8 pC/N. Therefore, the doping of V5+ ions in the B sites of LTO ceramics should be a good choice for enhancing their piezoelectric properties and resistivity at high temperature regimes.
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Acknowledgments
This work was supported by the National Natural Science Foundation of China (51932010), Sichuan Science and Technology Program (2018G20140) and the Fundamental Research Funds for Central Universities. I myself will also thank my friends Wenju Guan and Hanjiang Zou for waking me up every morning for months, so that I can complete this article successfully. This work is also supported by the China Scholarship Fund (201906240248).
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Li, Y., Lee, T., Jiang, L. et al. Improved Electrical Properties of Layer Structured La2Ti1.96V0.04O7 Ceramics. J. Electron. Mater. 49, 2584–2595 (2020). https://doi.org/10.1007/s11664-020-07945-x
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DOI: https://doi.org/10.1007/s11664-020-07945-x