Preparation of high-purity Ti–Si alloys by vacuum directional solidification
Introduction
As a new type of cast titanium alloy, eutectic Ti–Si alloy (Ti-8.45 wt%Si) is different from traditional Ti alloys in terms of the strengthening mechanism. For example, the Ti matrix can be strengthened by the ceramic Ti5Si3 phase and the eutectic structure of β-Ti [1]. The eutectic Ti–Si alloy has excellent performance not only due to its low density, high specific strength, and good corrosion resistance, similar to those of traditional cast titanium alloy, but also due to the narrow solidification interval and the superior casting [2,3]. Therefore, the eutectic Ti–Si alloy is a new cast titanium alloy that exhibits excellent performance under high-temperature, is strong, wear-resistant, and low-cost. It, therefore, meets the requirements needed for aero-engine compressor parts, aircraft fasteners, and large-scale thin-wall complex titanium alloy castings [4,5]. In addition, as TiSi2 has a low-density, high-temperature oxidation resistance, high-temperature stability, and high-temperature strength, it can be employed as high temperature structural material [6,7]. TiSi2 is also employed as gate electrode wiring, as interconnect lines, and as Schottky diode and ohmic contact materials because of its low resistivity and favorable field-emission properties. Therefore, TiSi2 plays an important role in the technology for integrated circuit contacts and bonding [[8], [9], [10]].
Recently, methods for the direct preparation of Ti–Si alloys using molten salt electrolytic metal oxides have been proposed. For example, Li et al. [11] prepared a Ti–Si–Fe alloy, which contains Mg, Ca, and Al impurities, at 900 °C, in CaCl2 molten salt with a sintered TiO2 and ilmenite mixture (Ti: Fe = 1:1 atomic ratio) as the cathode, and a graphite rod as the anode. Zou et al. [12] prepared Ti–Si alloy using the molten salt electrolysis multi-component Ti/Si metal oxide. However, the Ti–Si alloy thus prepared also contained Ca, Mg, Al, and Fe impurities. Therefore, it is clear that Ti–Si alloys prepared by molten salt electrolysis contain some impurities. Few studies have been carried out for purification of Ti–Si alloys, but there are some methods for purifying metallurgical-grade Si (MG-Si), including acid leaching [13,14], solvent refining [[15], [16], [17]], vacuum refining [18,19], directional solidification [[20], [21], [22]], etc. The methods of acid leaching and solvent refining will produce waste acid solution, especially HF was employed in process of Si purification. Vacuum refining and directional solidification are physical methods which do not discharge waste acid, slag and gas. The directional solidification technology has been employed to purify Si and to separate Si crystals from Si alloys, such as Si-Al [20,23,24], Si-Sn [21,[25], [26], [27]], Si–Cu [22,28] and Si–Ni [29].
Therefore, in this study, we propose the use of the directional solidification technology with a vacuum system (vacuum directional solidification) to purify the Ti–Si alloy. Vacuum directional solidification is a clean technology to purify Ti–Si alloy, because the main impurities are eliminated by physical phenomenon such as segregation behavior at the solid-liquid interface, and volatile behavior from the molten melt to the vacuum. The vacuum system, equipped with the directional solidification furnace, is used to eliminate impurities such as Ca and Mg, which can volatilize easily, making the directional solidification technology more efficient for the purification of Ti–Si alloys. In addition, the directional solidification technology is also employed to separate TiSi2 from the Ti–Si alloys. Finally, the mechanisms for purifying and separating Ti–Si alloys, using vacuum directional solidification, are also discussed.
Section snippets
Experimental
The experiments were carried out using a vacuum directional solidification furnace, as shown in Fig. 1. A Pt–Rh thermocouple was used to measure the temperature. Sponge titanium particles (<2 mm, 99.8%) and metallurgical-grade silicon particles (<2 mm, 99.1%) were used as raw materials, which contain the impurities listed in Table 1. The main focus of the study was the removal of Fe, Al, Ni, V, Mg, and Ca, which were the main impurities. To investigate the effects of the composition of Ti–Si
Purification of Ti–Si alloys using vacuum directional solidification
A Ti–Si alloy after vacuum directional solidification is shown in Fig. 3(a). The smooth boundary on the top of the sample indicates good melting and less oxidation. Fig. 4 shows the longitudinal distribution of impurities in the Ti–Si alloys after vacuum directional solidification, with a pulling-down rate of 3 μm/s. We found that the Ti–Si alloys could be purified well using vacuum directional solidification because most of the impurities, especially Fe, Al, V, and Ni, agglomerated at the top
Conclusions
In this paper, the vacuum directional solidification technique was used to purify and separate Ti–Si alloys with different compositions (Ti-8.45 wt%Si, Ti-63.7 wt%Si, Ti-71.6 wt%Si, and Ti-84.1 wt%Si) at different pull-down rates (3 μm/s, 5 μm/s, and 7 μm/s). The principal conclusions from this study are summarized as below:
- 1.
Vacuum directional solidification was proved to be an efficient and clean technology for the preparation of high-purity Ti–Si alloys. The Fe, Al, Ni, and V were eliminated
CRediT authorship contribution statement
Yakun Zhang: Conceptualization, Methodology, Data curation, Software, Writing - original draft. Yun Lei: Methodology, Validation, Formal analysis, Writing - review & editing. Wenhui Ma: Resources, Visualization, Project administration, Funding acquisition. Hao Wang: Software. Yuqiu Hu: Data curation. Kuixian Wei: Project administration, Supervision. Shaoyuan Li: Supervision.
Declaration of competing interest
The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.
Acknowledgments
This study was sponsored by the National Natural Science Foundation of China (No. U1702251).
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