Correction to: Low-temperature metal-induced crystallization of hydrogenated amorphous Si_1−xGe_x (0.25 ≤ x ≤ 1) thin films with Au solution

1 Correction to: Appl. Phys. A 90, 267–271 (2008) DOI: https://doi.org/10.1007/s00339-007-4260-x

Unfortunately, Fig 6 in the article was incorrect. It should be the AFM image of the Si_1-xGe_x (x=0.5) film annealed at 350 °C for 3 h. The author cannot prepare the revised figure as his research is focused on other field. Therefore, Fig. 6 and the related contents should be removed or changed as follows.

In the Abstract (p. 267), the first sentence should read as follows:

Low-temperature (∼400 °C) metal-induced crystallization of hydrogenated amorphous silicon-germanium thin films using Au solution has been investigated by X-ray diffraction, Raman spectra and scanning electron microscopy.

In the second paragraph in the Introduction (p. 267), the third sentence should read as follows:

X-ray diffraction (XRD), Raman spectra and scanning electron microscopy (SEM) were used to evaluate the structure and morphology of the Si_1-xGe_x films.

In the second paragraph in the Experimental details (p. 268), the first sentence should read as follows:

The structure and the morphology of the samples were characterized with XRD, Raman spectra and SEM measurements.

In the Results and discussion (p. 269), the sixth paragraph and Fig. 6 (p. 270) should be removed. Because of that Fig. 7 and Fig. 8 (also their citations) should be changed to Fig. 6 and Fig. 7 respectively.

In the first paragraph in the Conclusions (p. 270), the sixth sentence “The roughness of the surface of the films is as low as 4.2 nm.” should be removed.