Abstract
This contribution presents a new approach to rapid and low-temperature plasma-chemical crystallization of perovskite films. Chlorine-incorporated perovskite (MAPbI3–xClx) films were exposed to diffuse atmospheric hydrogen (H2) plasma immediately after their deposition. Several types of surface characterization techniques were used to investigate the effect of the H2 plasma on the surface of the perovskite films. Since the H2 plasma was generated at a low temperature (≤ 70 °C), there was no considerable damage to the plasma-treated perovskite films—although the morphology and chemistry changed significantly. H2 plasma had a range of effects on the surface of the perovskite films: (1) changes in the chemical composition of the perovskite surface without removal of lead; (2) modification of the optoelectrical band structure; (3) crystallization of the perovskite film; and (4) the grain of the surface became highly ordered. The results presented demonstrate that H2 plasma is a rapid and low-cost method for the manufacture of crystallized perovskite films. The method may be considered a significant step towards low-temperature, annealing-free crystallization of perovskite films.
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Acknowledgements
This research was supported by Project LO1411 (NPU I) funded by the Ministry of Education Youth and Sports of Czech Republic. Part of the work was carried out at CEITEC Nano Research Infrastructure (MEYS CR, 2016–2019). The authors would like to thank the Grant Agency of Masaryk University, Brno. The work of Masoud Shekargoftar was also supported by a Brno Ph.D. Talent Scholarship, funded by the City of Brno, Czech Republic. The author would like to thank Pavel Franta, Ondrej Caha and Miroslav Zemánek in the acquisition of UV–Vis spectroscopy, XRD and measurement of V-I waveforms. Tony Long (Svinošice) helped work up the English.
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Shekargoftar, M., Homola, T. A New Approach to the Crystallization of Perovskite Films by Cold Hydrogen Atmospheric Pressure Plasma. Plasma Chem Plasma Process 40, 539–548 (2020). https://doi.org/10.1007/s11090-020-10059-1
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DOI: https://doi.org/10.1007/s11090-020-10059-1