Piezoelectric films for high frequency ultrasonic transducers in biomedical applications
Introduction
High frequency (HF) ultrasound is a promising imaging modality for providing a more detailed delineation of superficial anatomical structures, e.g., skin and eye or vascular structures via catheterization. Ultrasonic transducers with frequency higher than 30 MHz yield improved spatial resolution at the expense of a reduced depth of penetration. The resolution of ultrasound image is determined by the pulse bandwidth (axial resolution, Raxial) and the beam width (lateral resolution, Rlateral). Simple expressions for the ideal lateral and axial resolution of a focused transducer within the focal zone are given by:where c is the speed of sound in the medium, fc the center frequency of the transducer, BW the bandwidth of the transducer, F# the f-number (the ratio of focal distance to aperture dimension) and λ the wavelength. Thus, for a fixed number of cycles per pulse, an increase in frequency would result in a reduction in wavelength and pulse duration (increase in BW). If the transducer frequency is increased to 50 MHz, an axial resolution and lateral resolution of better than 25 μm and 60 μm for an f-number of 1.9 and bandwidth of 65% can be achieved respectively. However, at the same time, the penetration depth of ultrasound into the tissue must be sacrificed due to frequency-dependent attenuation. At 50 MHz, the depth of penetration for most tissues would be approximately to 8–9 mm.
HF single element transducers have been widely used in ultrasound imaging systems. However, mechanical scanning of a single element transducer shows poorer resolution out of focal zone and has limited frame rate. These problems can be overcome by adopting linear arrays, in which an image is formed by electronically sweeping a beam. Fabrication of high frequency ultrasonic linear arrays has remained a challenge following more than a decade of study. The task is even more difficult to build arrays at a frequency greater than 50 MHz which requires very small kerfs and thinner ceramic sheets [9]. Recent research has shown that micro-machining technology is a possible solution to such high-frequency applications although much improvement still needs to be made [10], [11], [12]. Piezoelectric films have already been widely used to fabricate micro-scale devices [1], [2], [3], [4], [5], [6], [7], [8], [13], [14], [15]. Among them, PZT thick film has been shown to exhibit good dielectric and piezoelectric properties, making it a possible ultrasonic transducer material candidate for high-frequency applications via micro-machined technology.
To date, there are a number of groups that have successfully fabricated PZT thick films for transducer applications. Tsuzuki et al. [16] prepared PLZT thick films by multiple electrophoretic deposition and sintering process. Barrow et al. [17] and Lukacs et al. [18] have reported thick PZT ceramic coatings using sol–gel derived porous 0–3 composites for high frequency transducer application. High frequency ultrasound array transducers using piezoelectric thin films on larger structures are being developed for high-resolution imaging systems by Trolier-McKinstry et al. [10]. In their work, metal-oxide semiconductor (CMOS) transceiver chip for a 16-element array was fabricated with ultrasound front-end chip containing beam-forming electronics and receiver circuitry. In addition, Dausch et al. reported the design and fabrication of 2D pMUT arrays [19]. They also described the vibrational modes for operation of flexure-mode pMUT elements, transmit output pressures, receive and pulse-echo characteristics, and B-mode imaging performance of the 81-element 2D arrays at a center frequency of approximately 7 MHz [20]. Despite above progress the improving quality of piezoelectric films and exploring optimum process for high frequency transducers are still challenge.
In this review, we focus on the design, fabrication and application of piezoelectric thick films for high frequency ultrasonic transducers in biomedical imaging application. Recent progress in the development and application of ultrasonic transducers is presented and the challenges in pushing the transducers/arrays to higher operating frequency (>100 MHz) are addressed. Section 2 gives the basic principles of piezoelectric effect. Section 3 reviews the important design issues for ultrasonic transducer. Section 4 addresses piezoelectric films for high frequency ultrasonic transducer application. Section 5 presents fabrication and characteristics of high frequency piezoelectric films transducers. The current problems and future direction for very high frequency transducer applications in the near future are also addressed.
Section snippets
Basic principles of the piezoelectric effect
The piezoelectric effect was first reported by the Curie Brothers in 1880 [20]. The original discovery, that polarization charges are induced in response to an external mechanical stress, is known as direct piezoelectric effect. The converse piezoelectric effect refers to a dimensional change resulted from an applied electric field. Natural piezoelectric crystals, such as quartz and tourmaline, are seldom used today as transducer materials in diagnostic ultrasonic imaging due to their weak
Basic principles
The simplest ultrasonic transducer is single-element piston transducer (Fig. 1), which is based on a piezoelectric plate or disc poled along the thickness direction and used in its thickness mode, so its thickness t defines the resonance frequency f of the device given by [24]:with the lowest resonant frequency being n = 1, where n is an odd integer, and cp the acoustic wave velocity in the piezoelectric material. When an electrical impulse is applied to the plate, and an acoustical
Specific material parameters for transducer design
In transducer design, there are several material properties such as elastic, dielectric, piezoelectric constants, and machinability in addition to cost that have to be considered. Two of the most important material parameters for fabrication of medical ultrasound transducers are the electromechanical coupling coefficient (k) and acoustic impedance (Za). The k factor indicates the capability of the material to convert electrical energy into mechanical energy and vice versa. Its value ranges from
Sputtered ZnO film transducer by MEMS process
Zinc oxide (ZnO) has one of the defining characteristics of a piezoelectric material which is the lack of a center of symmetry in the unit cell. Fig. 17 shows the crystal structure of ZnO [114]. ZnO is a wurzite material and is non-ferroelectric with small dielectric constant (about 10). It shows a piezoelectric response along [0 0 1] direction. Acceptable piezoelectric effect, greater stability and availability make it being one of the most popular piezoelectric materials for thin-film device
Current problems and future directions
The field of medical ultrasound imaging is progressing rapidly. As its resolution and cost-effectiveness compares favorably with X-ray computed tomography and magnetic resonance imaging, the market share of ultrasound imaging is expected to gradually increase. High frequency ultrasound has many clinical applications including visualizing blood vessel wall, anterior segments of eye and skin. Another application of the high frequency transducer is small animal imaging. It is especially attractive
Conclusions
This article reviews the recent developments in piezoelectric films for high frequency ultrasonic transducer applications. Three main thick films technologies for piezoelectric materials that have been investigated are discussed. Higher than 200 MHz piezoelectric ZnO, PZT and lead free single element transducers have been successfully fabricated. With a better spatial resolution, these transducers are useful for observing biological structure with resolution approaching 10 μm. By integration with
Acknowledgements
We would like to acknowledge Dr. B.P. Zhu, Dr. C.G. Liu, Dr. F.T. Diuth, Dr. G.H. Feng, Dr. J. Cannata, Dr. C. Hu. Dr. M. Ishikawa, D.Y. Huang, Dr. J. Lee, Ms. A. Jakob, Mr. J. William, Mr. L. Xiang, Mr. R. Chen and Mr. H. Chabok. Without their significant contributions, the overview cannot be finished. Special thanks are extended to Prof. Susan Trolier-McKinstry at Penn State University, Prof. E.S. Kim at USC MEMS group, Prof. Takamuta at Toin University of Yokohama in Japan, Dr. J.H. Ryu at
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