样式: 排序: IF: - GO 导出 标记为已读
-
Electroluminescence from Silicon‐Based Light‐Emitting Devices with Erbium‐Doped Ta2O5 Films Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-18 Chengtao Xia, Ziwei Wang, Shuming Jiang, Ran Ji, Linlin Lu, Deren Yang, Xiangyang Ma
The visible and near‐infrared electroluminescence (EL) from the light‐emitting device (LED) based on the erbium (Er)‐doped Ta2O5 (Ta2O5:Er)/SiO2/Si structure is reported in this study. Wherein, an ∽10 nm thick SiO2 intermediate layer serves as an energy plateau for forming hot electrons, which initially transport from Si via trap‐assisted tunneling mechanism under sufficiently forward bias with the
-
Topologically protected synthesizing of Fock states in a circuit QED architecture Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-16 Wei Xin, Xiang-min Yu, Kun Zhou, Shaoxiong Li, Yang Yu
The preparation of Fock states is important for quantum information storage and processing. Here we present a two‐step protocol with topological protection for multi‐photon Fock states synthesizing in a circuit QED architecture. Due to photon number‐dependent vacuum Rabi splitting, the dynamics of the Jaynes‐Cummings ladder in the resonant regime can be equivalent to a spin‐1/2 chain while a multi‐frequency
-
True‐Red InGaN Light‐Emitting Diodes for Display Applications Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-16 Robert Armitage, Zhongmin Ren, Mark Holmes, Joseph Flemish
Red InGaN has attracted much attention recently for microLED display applications. However, the consequences of spectral broadening are often overlooked and many of the published spectra do not meet display gamut requirements. We focus on maximizing the red InGaN radiance with a spectrum capable of meeting the DCI‐P3 standard (dominant wavelength of ∽615 nm). The maximum radiance for LEDs meeting said
-
Optical properties of low‐defect large‐area h–BN for quantum applications Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-14 Shrivatch Sankar, Shantanu Saha, Jia-Shiang Chen, Shih-Po Chien, YannWen Lan, Xuedan Ma, Michael Snure, Shamsul Arafin
Intrinsic defects and their concentrations in hexagonal boron nitride play a key role in single photon emission. This study explores the optical properties of large‐area multilayer h–BN‐on‐sapphire grown by metalorganic chemical vapor deposition. Based on our detailed spectroscopic characterization using both cathodoluminescence and photoluminescence measurements, the material is devoid of random single‐point
-
-
The Interplay between Strain, Sn Content, and Temperature on Spatially Dependent Bandgap in Ge1−xSnx Microdisks Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-13 Ignatii Zaitsev, Agnieszka Anna Corley-Wiciak, Cedric Corley-Wiciak, Marvin Hartwig Zoellner, Carsten Richter, Edoardo Zatterin, Michele Virgilio, Beatriz Martín-García, Davide Spirito, Costanza Lucia Manganelli
-
GaN Drift Layers on Sapphire and GaN Substrates for 1.2 kV Class Vertical Power Devices Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-10 Frank Brunner, Enrico Brusaterra, Eldad Bahat‐Treidel, Oliver Hilt, Markus Weyers
The development of processes for epitaxial growth of vertical gallium nitride (GaN) drift layers enabling 1.2 kV breakdown voltage on low‐cost sapphire substrates is presented in comparison to GaN bulk substrates. The targeted blocking capability demands drift layers with a thickness of 10 μm and low but controllable n‐type doping. Using a growth rate of 2.5 μm h−1 the concentration of unintentionally
-
Why is the band gap of GaP indirect while that of GaAs and GaN are direct? Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-09 Jinhai Huang, Wei Yang, Zihui Chen, Shengxin Yang, Kan-Hao Xue, Xiangshui Miao
Many III‐V semiconductors possess direct band gaps and are thus widely applied in optoelectronics. Although GaN (either in wurtzite phase or zinc blende phase), GaAs and GaSb are well‐known direct gap semiconductors, GaP exhibits an indirect band gap nevertheless. This seems mysterious when considering that, P is between N and As among Group‐VA elements and GaN has a direct gap even in the zinc blende
-
Investigation of Phase Segregation Dynamics in Ge‐rich GST Thin Films by In‐situ X‐ray Fluorescence Mapping Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-08 Thomas Fernandes, Michael Texier, Philipp Hans, Cristian Mocuta, Solène Comby-Dassonneville, Gabriele Navarro, Simon Jeannot, Thomas W. Cornelius, Madeleine Han, Jaime Segura Ruiz, Martin Rosenthal, Yannick le Friec, Roberto Simola, Olivier Thomas
Ge‐rich Ge‐Sb‐Te alloy is a good candidate for future automotive applications due to its high crystallisation temperature, which allows good data retention at elevated temperatures. Crystallization in this material is governed by elemental segregation which is key to thermal stability and device performance. In this work elemental (Ge, Sb, Te) segregation is studied in situ during thermal annealing
-
Electronic Structure Evolution in the Temperature Range of Metal–Insulator Transitions on Sn/Ge(111) Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-07 Maya N. Nair, Irene Palacio, Yoshi Ohtsubo, Amina Taleb-Ibrahimi, Enrique G. Michel, Arantzazu Mascaraque, Antonio Tejeda
-
An Ultralow Concentration of Cr2O3 Dopants-Driven Lower Temperature Sintering ZnO-Based Varistor Ceramics Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-07 Yadong Cheng, Liaoying Zheng, Huarong Zeng, Tian Tian, Xue Shi, Zhenyong Man, Xuezheng Ruan, Guorong Li, Min Zhu
-
Carrier transport properties of the orthorhombic phase boron nitride nanoribbons and rectifying device design Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-06 Jun Zhao, Can Yao, Yunxi Qi, Hui Zeng
Using density functional theory combined with non‐equilibrium Green’s function, we investigate the electronic structures and carrier transport properties of the orthorhombic phase boron nitride nanoribbons (BNNRs) with different edges and different widths. The calculated results show that both armchair‐ and zigzag‐edged BNNRs are direct bandgap semiconductors. The quantum confinement gives rise to
-
Deep‐ultraviolet luminescence properties of AlN Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-05 Ryota Ishii, Akira Yoshikawa, Mitsuru Funato, Yoichi Kawakami
High‐resolution, low‐excitation photoluminescence (PL) spectroscopy was performed for unintentionally doped, silicon‐doped, and magnesium‐doped homoepitaxial aluminum nitride (AlN) films, using a wavelength‐tunable high‐repetition‐rate laser. The wavelength‐tunable laser was used to distinguish between the luminescence and scattering signals from AlN. Providing the high‐resolution, low‐excitation PL
-
Electric, Dielectric, and Phonon Properties of Cu2OCl2 Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-04 Iliana N. Apostolova, Angel T. Apostolov, Julia M. Wesselinowa
-
High-Resolution Patterning of Conductive Microstructures by Electrostatic Deposition of Aerosol Au Nanoparticles through the Dielectric Mask Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-04 Alexey Efimov, Anton Patarashvili, Dmitry Maslennikov, Vladislav Davydov, Denis Kornyushin, Mohammad Reza Ghorbani Fard, Dmitry Labutov, Vitaly Torgunakov, Margarita Zebreva, Victor Ivanov
-
Deep-Red (Sr,Ba)Lu2O4: Eu2+ Phosphor for Full-Spectrum Lighting Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-02 Shaoxiong Wang, Fengluan You, Shaojun Wang, Tao Pang, Lingwei Zeng, Shisheng Lin, Yuanhui Zheng, Yongzheng Fang, Daqin Chen
-
Evidence of cationic antiphase disorder in epitaxial Cu(In,Ga)S2 grown on GaP/Si(001) Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-02 Eugène Bertin, Éric Gautron, Nicolas Barreau, Charles Cornet, Ludovic Arzel, Leo Choubrac, Antoine Létoublon, Sylvie Harel, Rozenn Bernard, Maud Jullien, Rohel Tony, Lionel Assmann, Olivier Durand
We present a transmission electron microscopy study of epitaxial Cu(In,Ga)S2 (CIGS) films co‐evaporated on GaP/Si(001), in either Cu‐rich or Cu‐poor conditions. We first unveil the spatial distribution and the orientation of the different phases by means of electron diffraction. From atomically resolved imaging of the CIGS film’s atomic structure, we conclude that different chalcopyrite domains, sharing
-
Epitaxial Tantalum-Doped β-Ga2O3 Thin Films Grown on Mgo (001) Substrate by Pulsed Laser Deposition Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-03-01 Haobo Lin, Ningtao Liu, Wei Wang, Xiaoli Zhang, Dongyang Han, Wenrui Zhang, Jichun Ye
-
Relative Intensity Noise in a Two-Section Distributed Bragg Reflector Tapered Laser Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-29 Pawel Adamiec, Jose Manuel Garcia Tijero, Ignacio Esquivias, Hans Wenzel, Bernd Sumpf
-
ADVANCEMENTS IN UNCOOLED BOLOMETER TECHNOLOGY: SHORT‐WAVE INFRARED DETECTION VIA CuFeSe2$\left(\text{CuFeSe}\right)_{2}$ NANOCRYSTAL COLLOIDAL THIN‐FILMS Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-28 Ashutosh Vishwakarma, Chinmay Shailendra Gharpure, Anumol Sugathan, Anshu Pandey, Sushobhan Avasthi
Microbolometers have emerged as a cost‐effective alternative to cooled infrared photon detectors, albeit with certain trade‐offs in terms of responsivity (), detectivity (), and response time (). The research in this field has been driven by the potential applications in night vision devices, military surveillance, and autonomous vehicles, leading to a growing interest in exploring new materials to
-
Systematic Investigation on the Surfactant-Assisted Liquid-Phase Exfoliation of MoS2 and WS2 in Water for Sustainable 2D Material Inks Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-25 Micaela Pozzati, Felix Boll, Matteo Crisci, Sara Domenici, Bernd Smarsly, Teresa Gatti, Mengjiao Wang
-
Modified Electronic Structure of Amorphous Mn–Si–Te for Ovonic Threshold Switch Application: Improved Thermal Stability by the Formation of Mn–Te Bonding Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-23 Kentaro Saito, Shogo Hatayama, Yuta Saito
-
Colloidal-Doped Semiconductor Nanocrystals Embedded in One-Dimensional Photonic Crystals for Ultrafast Photonics Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-23 Ilka Kriegel, Francesco Scotognella
-
Polycrystalline GeSn Films Grown by Hot Wire Chemical Vapor Deposition on SiO2/Si(001) Substrates Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-22 Gennady Vladimirovich Shengurov, Yury Nikolaevich Buzynin, Vadim Yurievich Chalkov, Alexey Vladimirovich Nezhdanov, Alexey Vladimirovich Kudrin, Pavel Andreevich Yunin
-
Enhanced Thermoelectric Performance of Cu2Se Alloys by Simultaneous Engineering of Thermal and Electrical Transport Properties through S and Te Co-Doping Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-22 Mahwish Khan, Hongchao Wang, Chunlei Wang
-
Theoretical and Experimental Study of High-Electromechanical-Coupling Surface Acoustic Wave Resonators Based on A-Plane (112¯0) Al0.56Sc0.44N Films Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-21 Weilun Xie, Weipeng Xuan, Danyang Fu, Yingqi Jiang, Qikun Wang, Xingli He, Liang Wu, Jinkai Chen, Shurong Dong, Hao Jin, Jikui Luo
-
Transition Metal Impurities as Shallow Donors in β-Ga2O3 Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-21 Siavash Karbasizadeh, Sai Mu, Mark E. Turiansky, Chris G. Van de Walle
-
Fabrication of Vertical AlGaN-Based Ultraviolet-B Laser Diodes Using a Substrate Exfoliation Method with Water Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-16 Toma Nishibayashi, Ryosuke Kondo, Eri Matsubara, Ryoya Yamada, Rintaro Miyake, Yusuke Sasaki, Yoshinori Imoto, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, Motoaki Iwaya
-
Tuning the Bandgap and Topological Phase Transition in Bilayer Van der Waals Stanane by Electric Field Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-15 Yifei Zhao, Zhongyao Li
-
Asymmetric Electronic Transport in Porphine: Role of Atomically Precise Tip Electrode Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-14 Koushik R. Das, Sudipta Dutta
-
Thickness-Dependent Bandgap and Atomic Structure in Elemental Tellurium Films Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-14 Yuting Sun, Tamihiro Gotoh, Bowen Li, Huanglong Li, Min Zhu
-
Investigation on the Mist Intensity to Deposit Gallium Oxide Thin Films by Mist Chemical Vapor Deposition Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-12 Swapnodoot Ganguly, Krishna Nama Manjunatha, Shashi Paul
-
First Principles Calculation of Gas Sensitive Properties of Pd3-Modified Monolayer PtSe2 to SF6 Decomposition Products Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-12 Mengting Li, Weifu Cen, Zean Tian, Quan Zheng
-
Improved NH3 Gas Sensing Performance of Femtosecond-Laser Textured Silicon by the Decoration of Au Nanoparticles Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-10 Yuan Li, Hua Li, Binbin Dong, Xiaolong Liu, Guojin Feng, Li Zhao
-
Dual Substrate Effect of Silicon Substrate on Thermal Transport Characteristic of (14,14,14)-Graphyne: Transformation from Conventional Suppressing Role to Abnormal Promoting Role Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-08 Yufei Gao, Zheyi Zhang, Xiaoliang Zhang, Yanguang Zhou, Dawei Tang
-
Ferroelectric Control of Band Alignments in In2Se3/h-BN and CuInP2S6/h-BN van der Waals Heterostructures Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-07 Songmin Liu, Pan Zhou, Pengfei Hou, Lizhong Sun
-
Programming Operations Analysis and Statistics in One Selector and One Memory Ovonic Threshold Switching + Phase-Change Memory Double-Patterned Self-Aligned Structure Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-02-06 Renzo Antonelli, Guillaume Bourgeois, Simon Martin, Valentina Meli, Niccoló Castellani, Antoine Salvi, Sylvain Gout, Mathieu Bernard, Pattamon Dezest, François Andrieu, Abdelkader Souifi, Gabriele Navarro
-
Phosphides-Based Terahertz Quantum-Cascade Laser Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-31 Dmitrii V. Ushakov, Alexander A. Afonenko, Rustam A. Khabibullin, Mikhail A. Fadeev, Alexander A. Dubinov
-
Skyrmion Motion in Ferrimagnets Driven by Magnetic Anisotropy Gradient Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-31 Huan Xu, Qianqian Yang, Yang Liu, Guo Tian, Lei Qiu, Minghui Qin, Zhipeng Hou
-
Probing the Spatial Variation of Magnetic Order in Strained SrMnO3 Thin Films Using Spin Hall Magnetoresistance Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-30 Job J. L. van Rijn, Tamalika Banerjee
-
Atomic Structure and Dynamics of Unusual and Wide-Gap Phase-Change Chalcogenides: A GeTe2 Case Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-30 Takeshi Usuki, Chris J. Benmore, Andrey Tverjanovich, Sergei Bereznev, Maxim Khomenko, Anton Sokolov, Daniele Fontanari, Koji Ohara, Maria Bokova, Mohammad Kassem, Eugene Bychkov
-
Magnetic- and Spin-Gapless-Related Transport Properties in Sputtered Mn2CoGa Thin Films Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-30 Guizhou Xu, Li Tang, Peihao Wang, Shuang Pan, Yuqing Bai, Xinji Xiang, Shichao Zhang, Jie Zhu, Feng Xu
-
Synaptic Behaviors Mimicked in Low-Voltage P-Type CuI Neuromorphic Transistors Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-30 Guanggang Jiang, Wei Dou, Xiaomin Gan, Wei Hou, Dongsheng Tang
-
High-Performance Fully Transparent Ultraviolet Photodetector Fabricated Using GaN-Based Schottky Barrier Photodiode Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-30 Lijuan Ye, Xinya Huang, Haowen Liu, Xudong Li, Fengyun Xu, Jianjun Pan, Honglin Li, Di Pang, Chunyang Kong, Hong Zhang, Yuanqiang Xiong, Wanjun Li
-
Crystallization of Amorphous N-Doped Ge-Rich GST Layers Deposited on a Polycrystalline GST Template Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-30 Minh-Anh Luong, Eloïse Rahier, Sijia Ran, Alain Claverie
-
ISCOPEM2D V1.0: An In-Situ Method to Characterize and Compare CVD Graphene Films using Quality Matrix Approaches Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-28 Kishan Thodkar, Milivoj Plodinec, Fabian Gramm, Karsten Kunze
Single layer CVD graphene films are commonly transferred from their native growth substrates during characterization. However, the transfer process influences their intrinsic material properties and growth substrate-related material information is lost. In this work, we present an in-situ method to suspend CVD graphene films directly on their growth substrate. Our approach makes the sample compatible
-
Encapsulation Effects on Ge-Rich GeSbTe Phase-Change Materials at High Temperature Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-29 Oumaima Daoudi, Emmanuel Nolot, Mélanie Dartois, Magali Tessaire, François Aussenac, Nicolas Bernier, Nicolas Gauthier, Névine Rochat, Frédéric Fillot, Van-Hoan Le, Hubert Renevier, Gabriele Navarro
-
Highly Efficient Red, Green, and Blue Inverted Top-Emitting Organic Light-Emitting Diodes with Microstructured TiN Substrate Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-28 Wei Shi, Haixia Zheng, Yunping Zhao, Xianyong Pu, Xinfeng Shui, Yang Lin, Guo Chen, Xuyong Yang, Guoqi Zhang, Bin Wei
-
A NEW LEAD-FREE Cs12Zn3.1Mn0.9Cl20 PEROVSKITE MATERIAL for LIGHT-EMITTING DIODES Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-24 Zhenzhen Zhu, Yurou Wang, Yihan Li, Yuntao Yu, Dawei Zhang, Honge Wu, Zongrui Zhang
Lead-containing halide perovskite materials’ toxicity and instability severely restrict their ability to be used in further commercial applications. Here, we report on a new lead-free and thermal stable Cs12Zn3.1Mn0.9Cl20 perovskite material obtained via a simple room temperature precipitation method. A high photoluminescence quantum yield (PLQY) of 83.1% can be obtained from the perovskite material
-
N-Doped ZnSnO Optoelectronic Synaptic Thin Film Transistors with Enhanced Visible-Light Response Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-26 Xiaohan Liu, Junyan Ren, Peixuan Hu, Yujia Qian, Ting Li, Lingyan Liang, Hongtao Cao
-
Enhanced Wall-Plug Efficiency over 2.4% and Wavelength Dependence of Electrical Properties at Far UV-C Light-Emitting Diodes on Single-Crystal AlN Substrate Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-26 Hirotsugu Kobayashi, Kosuke Sato, Yusuke Okuaki, TaeGi Lee, Yoshihisa Kunimi, Naohiro Kuze
-
Study of Ge-Rich Ge–Sb–Te Device-Dependent Segregation for Industrial Grade Embedded Phase-Change Memory Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-22 Elisa Petroni, Mario Allegra, Matteo Baldo, Luca Laurin, Andrea Serafini, Laurent Favennec, Latifa Desvoivres, Jury Sandrini, Christian Boccaccio, Yannick Le-Friec, Alain Ostrovsky, Pascal Gouraud, Aurore Bonnevialle, Rossella Ranica, Andrea Redaelli
-
Recent Progress in III-Nitride Tunnel Junction Light-Emitting Diodes Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-22 Qianxi Zhou, Jiahao Song, Ke Sun, Yuechang Sun, Sheng Liu, Shengjun Zhou
-
Characteristics of Light-Emitting Diodes Based on Terbium-Doped Ga2O3 Films Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-22 Qixin Guo, Yushi Koga, Zewei Chen, Katsuhiko Saito, Tooru Tanaka
-
Data-Driven Strategies for Accelerated Structural Exploration of High-Performance 2D Carbon-Based Seawater Desalination Membranes Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-18 Yutao Niu, Ting Xu, Kun Meng, Xiuhan Li, Yan Wei, Yannan Zhang, Xiaohua Yu, Ju Rong
-
A Mechanical–Electrical Model to Describe the Negative Differential Resistance in Membranotronic Devices Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-18 Max Huber, Jörg Schuster, Oliver G. Schmidt, Harald Kuhn, Daniil Karnaushenko
-
Quantitative Scanning Transmission Electron Microscopy–High-Angle-Annular Dark-Field Study of the Structure of Pseudo-2D Sb2Te3 Films Grown by (Quasi) Van der Waals Epitaxy Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-18 Vitomir Sever, Nicolas Bernier, Damien Térébénec, Chiara Sabbione, Jessy Paterson, Florian Castioni, Patrick Quéméré, Audrey Jannaud, Jean-Luc Rouvière, Hervé Roussel, Jean-Yves Raty, Françoise Hippert, Pierre Noé
-
A Novel Self-Powered and High Switching Ratio UV–vis Photodetector Based on Multilayer Bi2O3/In2O3 Heterojunction Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-17 Yue Wang, Lei Yang, Mingkun Huang, Yuanhao Kang, Le Wang, Niumiao Zhang
-
Flexible Electronics Applications of Ge-Rich and Se-Substituted Phase-Change Materials in Nonvolatile Memories Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-11 Joe Pady, Julio Costa, Catherine Ramsdale, Feras Alkhalil, Aimee Nevill, Monica F. Craciun, C. David Wright
-
Longitudinal Coupling Synthesis in Superconducting Qubits Phys. Status Solidi. Rapid Res. Lett. (IF 2.8) Pub Date : 2024-01-11 Jie Chen, Wenchang Yan, Jie Zhao, Xinsheng Tan, Yang Yu