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Electronic and optical properties of pyrochlore Re2Ti2O7 (Re = Sm and Eu) from first-principles J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-18 Wan-Qi Liu, Hong-Ting Lu, Yan-Lu Li, Xian Zhao, Chun-Ming Wang
Rare-earth titanate oxides are believed to be prospective functional materials for photocatalytic and photoluminescent applications because of their excellent optical properties and thermal stability of their physical properties. However, the relationships between optical properties and photoelectron trapping mechanisms are unclear. Herein, the structure, electronic, and optical properties of pyrochlore-structure
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Wideband metasurface-loaded rectenna for azimuth-insensitive electromagnetic energy absorption using characteristic mode analysis J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-15 Lianwen Deng, Zhe-Jia He, Shengxiang Huang, Lei-Lei Qiu, Lei Zhu
In this paper, a wideband metasurface-loaded (MTS-L) rectenna system is proposed to capture electromagnetic (EM) energy at arbitrary azimuth angles. The radiation patterns of different modes in the original MTS configuration are analyzed using the characteristic mode theory, and potential modes with omnidirectional radiation are screened out. By the arrangement of patches, the roundness performance
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Fabrication of single-crystalline YFeO3 films with large antiferromagnetic domains J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-15 Cong Wang, Mikk Lippmaa, Satoru Nakatsuji
The antiferromagnetic orthoferrite YFeO3 possesses fascinating magnetic properties for spintronics, such as terahertz spin dynamics, ultrafast domain wall motion, and long magnon decay length. YFeO3 belongs to a special family of antiferromagnets that show an unusually strong non-trivial Kerr response due to its weak ferromagnetism. The highly stable antiferromagnetic domains without any spontaneous
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Modified Steinberg–Guinan elasticity model to describe softening–hardening dual anomaly in vanadium J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-15 Hao Wang, Yuan-Chao Gan, Xiang-Rong Chen, Yi-Xian Wang, Hua Y. Geng
Constitutive models are essential for describing the mechanical behavior of materials under high temperatures and pressures, among which the Steinberg–Guinan (SG) model is widely adopted. Recent work has discovered a peculiar dual anomaly of compression-induced softening and heating-induced hardening in the elasticity of compressed vanadium [Phys. Rev. B 104, 134102 (2021)], which is beyond the capability
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Self-contained calibration samples and measurements of the thermoelectric figure of merit: A method to improve accuracy J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-15 D. Vasilevskiy, S. Turenne, R. A. Masut
Despite more than seven decades of active research and development in thermoelectricity, the accurate measurement of the thermoelectric (TE) properties of bulk materials has remained a challenge, mainly because of the strong interrelation between thermal and electrical phenomena. This work highlights practical advancements in methods and instrumentation dedicated to the simultaneous measurements of
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Experimental study of millisecond pulse laser ablation biased silicon-based PIN photodiodes J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-15 Zhi Wei, Jinyuan Yu, Minghui Zuo, Pin Nie
The investigation of the highest surface temperature and damage region of silicon-based photodiodes (PIN) was conducted through irradiation with millisecond (ms) pulse lasers. The convex spots on the surface of the biased photodiode were observed to be diminished by a millisecond pulse laser for the first time. The experimental results presented herein demonstrate the presence of a bump, even in cases
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Undoing band anticrossing in highly mismatched alloys by atom arrangement J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-15 Qian Meng, Seth R. Bank, Mark A. Wistey
The electronic structures of three highly mismatched alloys (HMAs)—GeC(Sn), Ga(In)NAs, and BGa(In)As—were studied using density functional theory with HSE06 hybrid functionals, with an emphasis on the local environment near the mismatched, highly electronegative atom (B, C, and N). These alloys are known for their counterintuitive reduction in the bandgap when adding the smaller atom, due to a band
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Growth optimization, optical, and dielectric properties of heteroepitaxially grown ultrawide-bandgap ZnGa2O4 (111) thin film J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-15 Subrata Karmakar, Injamamul Hoque Emu, Md Abdul Halim, Pallab Kumar Sarkar, Maria Sultana, Ayesha Tasnim, Md Abdul Hamid, Istiaq Firoz Shiam, Ravi Droopad, Ariful Haque
Ultrawide bandgap ZnGa2O4 (ZGO) thin films were grown on sapphire (0001) substrates at various growth temperatures with a perspective to investigate the electrical and optical characteristics required for high-power electronic applications. Due to the variation in the vapor pressure of Zn and Ga, severe loss of Zn was observed during pulsed laser deposition, which was solved by using a zinc-rich Zn0
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Performance analysis of acoustically actuated magnetoelectric antennas via equivalent circuit method J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-15 Yongjun Du, Jiacheng Qiao, Jingen Wu, Yiwei Xu, Tianxiang Nan, Shuxiang Dong, Zhongqiang Hu, Ming Liu
Acoustically actuated magnetoelectric (ME) antennas based on resonant magnetoelectric coupling within ferromagnetic/piezoelectric ME laminated composites have recently been considered as a promising solution for antenna miniaturization. However, its radiation performance has been theoretically overestimated, since the negative effects on performances due to the magnetization saturation and the nonlinear
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Investigation of phonon lifetimes and magnon–phonon coupling in YIG/GGG hybrid magnonic systems in the diffraction limited regime J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-14 Manoj Settipalli, Xufeng Zhang, Sanghamitra Neogi
Quantum memories facilitate the storage and retrieval of quantum information for on-chip and long-distance quantum communications. Thus, they play a critical role in quantum information processing and have diverse applications ranging from aerospace to medical imaging fields. Bulk acoustic wave (BAW) phonons are attractive candidates for quantum memories because of their long lifetimes and high operating
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Study on the effects of Si-doping in molecular beam heteroepitaxial β-Ga2O3 films J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-14 Jiali Zhan, Ying Wu, Xiaohong Zeng, Boyuan Feng, Minghao He, Gaohang He, Sunan Ding
β-Ga2O3, an emerging wide bandgap semiconductor material, holds significant potential for various applications. However, challenges persist in improving the crystal quality and achieving controllable doping of β-Ga2O3. In particular, the relationship between these factors and the mechanisms behind them are not fully understood. Molecular beam epitaxy (MBE) is viewed as one of the most sophisticated
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Carrier injection induced degradation of nitrogen passivated SiC–SiO2 interface simulated by time-dependent density functional theory J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-14 Tao Xiong, Xiuming Dou, Wen-Feng Li, Hongyu Wen, Hui-Xiong Deng, Yue-Yang Liu
The performance of SiC-based metal-oxide-semiconductor field-effect transistors (MOSFETs) degrades seriously after a period of continuous operation. To directly understand this issue, we conduct real-time time-dependent density functional theory (TDDFT) simulations on a series of nitrogen passivated SiC–SiO2 interfaces to monitor the interaction between carriers and interface atoms. We find that the
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Perspective: Theory and simulation of highly mismatched semiconductor alloys using the tight-binding method J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-13 Christopher A. Broderick, Eoin P. O’Reilly, Stefan Schulz
The electronic structure of highly mismatched semiconductor alloys is characterized by carrier localization and strongly influenced by the local alloy microstructure. First-principles calculations can deliver valuable quantitative insight, but their associated computational expense limits alloy supercell size and imposes artificial long-range ordering, which can produce misleading results. The empirical
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Investigation of magnetization dynamics in trilayer width-modulated nanowires J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-13 Mahathi Kuchibhotla, Arabinda Haldar, Adekunle Olusola Adeyeye
We have investigated the magnetization reversal processes and dynamic behavior of trilayered Py(50 nm)/Pd(tPd)/Py(20 nm) nanowires with periodic width modulation as a function of spacer layer thickness tPd in the range from 0 to 10 nm and compared them with single-layer nanowires. The ferromagnetic resonance spectra show more than three modes that result from a non-uniform demagnetizing field in width-modulated
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Investigating the influence of substrate orientation and temperature on Cu cluster deposition J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-13 Yiwen He, Shixu Zhang, Zhijun Zheng, Gongping Li
The crystal orientation and the temperature of the substrate are crucial factors that influence clusters deposition and, consequently, the properties of thin films. In this study, the molecular dynamics simulation method was employed to investigate the deposition of Cu55 clusters on Fe(001), Fe(011), and Fe(111) substrates with varying crystal orientations. The incident energies used ranged from 0
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Mesoscale model for computational simulation of reaction driven by dielectric breakdown in metal-polymer propellants J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-13 Ju Hwan (Jay) Shin, Min Zhou
The reactivity of heterogeneous energetic materials (HEMs) intimately depends on the underlying microstructural effects. For reactive materials, key factors include the microstructure distribution, morphology, size scale of heterogeneities, reactant mixing, and chemical kinetics of the reactants. We report the development of a mesoscale model for simulating the evolutions of the hotspot field and associated
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Fluorescence pressure sensors: Calibration of ruby, Sm2+: SrB4O7, and Sm3+: YAG to 55 GPa and 850 K J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-12 Yingzhan Wei, Qiang Zhou, Caizi Zhang, Liang Li, Xinyang Li, Fangfei Li
In this work, a calibration of ruby, samarium-doped strontium tetraborate (Sm2+: SrB4O7), and samarium-doped yttrium aluminum garnet (Sm3+: YAG) using Raman and fluorescence spectra was conducted within the temperature range of 296–850 K and pressure range of 0–55 GPa. The obtained calibration can be applied independently for high-temperature or high-pressure conditions and described as the unit form
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Exploring low-temperature dynamics in triple perovskite ruthenates using nonlinear dielectric susceptibility measurements J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-12 Shruti Chakravarty, Sunil Nair
We report the nonlinear dielectric properties of three triple-perovskite ruthenates: Ba3CoRu2O9, Ba3BiRu2O9, and Sr3CaRu2O9. These compounds exhibit notable correlations among their spin, charge, lattice, and polar degrees of freedom. Ba3CoRu2O9 displays a pronounced frequency-dependent relaxation in χ2,3 just above the magnetoelastic transition, occurring around 100 K, followed by an abrupt loss of
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Investigation of thermal stress effects on subthreshold conduction in nanoscale p-FinFET from Multiphysics perspective J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-12 Huali Duan, Erping Li, Qinyi Huang, Da Li, Zhufei Chu, Jian Wang, Wenchao Chen
The rising temperature due to a self-heating or thermal environment not only degrades the subthreshold performance but also intensifies thermal stress, posing a severe challenge to device performance and reliability design. The thermal stress effects on the ON-state performance of the p-type fin field-effect transistor were previously studied. However, as far as we know, how thermal stress affects
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Control of a twisted domain wall motion supported by topology J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-11 Seong Tae Kim, Hee-Sung Han, Mi-Young Im, Soong-Geun Je
We report the topology-mediated modulation of a twisted domain wall speed in a thick perpendicularly magnetized system. By exploiting the topological robustness of the direction of the Bloch wall component in the twisted domain wall, we show that the domain wall speed either increases or decreases depending on whether the transverse magnetic field is parallel or antiparallel to the Bloch wall component
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Influence of Yb3+ percentage on emission of Er3+ doped into GdVO4 matrix J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-11 Maria Fernanda Ferreira, João Vitor Gonçalves de Faria, Lauany Mazzon Pontes, Marcela Guedes Matos Crespi, Lucas Alonso Rocha, Eduardo José Nassar
In this study, we used the non-hydrolytic sol–gel methodology to synthesize gadolinium vanadate particles doped with different Er3+ and Yb3+ molar ratios. Er3+ and Yb3+ chlorides and vanadium alkoxide were used as precursors during the sol–gel synthesis. The resulting powders were treated at 800 °C and characterized by x-ray diffraction and photoluminescence. The x-ray diffractogram displayed peaks
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Plume mode instability enhanced by emitter surface poisoning in hollow cathode J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-08 Atsuya Suzuki, Shinatora Cho, Hiroki Watanabe, Kiyoshi Kinefuchi
The unstable plume mode of hollow cathodes should be avoided in practical applications because it severely degrades the overall cathode lifetime. In this study, we investigate the spot-plume transition and plasma stability characteristics of an unused segmented lanthanum hexaboride emitter. The expansion of the unstable plume mode region is observed during a discharge experiment. Subsequently, the
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Separation of noisy multitone signals based on variational mode decomposition J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-08 Zhihua Pang, Chengtian Song, Bohu Liu
We have observed that Variational Mode Decomposition (VMD) exhibits instability in the denoising and separation of noisy multitone signals. Specifically, minor changes in factors such as signal-to-noise ratio, frequency spacing, sampling rate, and probability distribution can significantly impact the decomposition results. To address this issue, we have developed the Dual-VMD-correlation algorithm
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Modeling of plasmonic and polaritonic effects in photocurrent nanoscopy J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-08 A. Rikhter, D. N. Basov, M. M. Fogler
We present a basic framework for modeling collective mode effects in photocurrent measurements performed on two-dimensional materials using nano-optical scanned probes. We consider photothermal, photovoltaic, and bolometric contributions to the photocurrent. We show that any one of these can dominate depending on frequency, temperature, applied bias, and sample geometry. Our model is able to account
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Native point defects in 2D transition metal dichalcogenides: A perspective bridging intrinsic physical properties and device applications J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-08 Kyungmin Ko, Mingyu Jang, Jaeeun Kwon, Joonki Suh
Two-dimensional (2D) transition metal dichalcogenides (TMDs) hold immense promise as ultrathin-body semiconductors for cutting-edge electronics and optoelectronics. In particular, their sustained charge mobility even at atomic-level thickness as well as their absence of surface dangling bonds, versatile band structures, and silicon-compatibility integration make them a prime candidate for device applications
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Tutorial: Microscopic properties of O–H centers in β-Ga2O3 revealed by infrared spectroscopy and theory J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-08 Michael Stavola, W. Beall Fowler, Amanda Portoff, Andrew Venzie, Evan R. Glaser, Stephen J. Pearton
β-Ga2O3 is an ultrawide bandgap semiconductor that is attracting much attention for applications in next-generation high-power, deep UV, and extreme-environment devices. Hydrogen impurities have been found to have a strong effect on the electrical properties of β-Ga2O3. This Tutorial is a survey of what has been learned about O–H centers in β-Ga2O3 from their vibrational properties. More than a dozen
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Driven electron g-factor anisotropy in layered III–V semiconductors: Interfacing, tunnel coupling, and structure inversion asymmetry effects J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-08 M. A. Toloza Sandoval, J. E. Leon Padilla, A. B. Wanderley, G. M. Sipahi, J. F. Diniz Chubaci, A. Ferreira da Silva
A key piece for spintronic applications, the so-called electron g-factor engineering is still predominantly based on the semiconductor bulk g factor and its dependence on the bandgap energy. In nanostructures, however, the mesoscopic confinement introduces exclusive anisotropies, transforming scalar g factors into tensors, enabling different renormalization mechanisms as routes for fine-tuning the
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Topological domain characteristics during the transition from ferroelectric to antiferroelectric in hexagonal manganites J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-08 Hongling Lin, Kunlun Yang, Yu Huang, Lin Lin, Zhibo Yan, Xiaokun Huang, Xiangping Jiang, J.-M. Liu
Hexagonal manganites can exhibit the low-symmetry ferroelectric (FE) P63cm and partially undistorted anti-ferroelectric (PUA) P-3c1 states. The two states are accompanied by distinct sixfold vortex domain structures. The transition from the FE P63cm and PUA P-3c1 states (FE-PUA transition) is an effective means to control domain structures with distinct FE properties, which is of rich physical properties
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Sm substitution induced spin reorientation and stabilization of double perovskite structure resulting in enhanced magnetoelectricity in LaYFe2O6 J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-08 R. Ghosh, S. Mishra, A. Barik, M. R. Sahoo, D. Saini, D. Mandal, P. D. Babu, S. D. Kaushik, P. N. Vishwakarma
We report an enhanced magnetoelectric (ME) effect in spin–phonon coupled single-phase La1−xSmxYFe2O6 (0 ≤ x ≤ 1). The structural, electric, magnetic, and ME properties have been investigated to establish their interplay leading to magnetoelectricity. X-ray diffraction study suggests the facilitation of the P21nm phase (double perovskite lattice arrangements) formation and improved structural order
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Control of buckling behavior in origami-based auxetic structures by functionally graded thickness J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-08 S. Tomita, K. Shimanuki, K. Umemoto
Negative Poisson’s ratio in auxetic structures plays a crucial role in energy absorption and impact mitigation. Origami-based lattices within the realm of auxetic structures offer the advantage of facile fabrication and design. Nevertheless, the utilization of periodic lattices in origami-based auxetic structures constrains the available design space for achieving diverse mechanical properties. Addressing
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Durable self-cleaning anti-reflective and antifog micro-nanostructures fabricated by laser ablation of vanadium-coated glass surfaces J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-08 Yu Guo, Xiaowen Qi, Pengfei Wang, Chao Teng, Ying Li, Longfei Mi, Xiangfu Chen, Hongtao Cui
In this study, low-cost laser marker ablation of vanadium-coated glass was adopted to prepare self-cleaning, anti-reflective, and anti-fog micro-nano structures on its surface. The surface had a hierarchical micro-nano structure composed of a quasi-periodic microstructure and ∼100 nm-sized worm-like clusters interspersed with dispersed nanoparticles. The solar spectrum (AM 1.5) weighted average transmission
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Dynamic model of tissue electroporation on the basis of biological dispersion and Joule heating J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-07 R. Guedert, D. L. L. S. Andrade, J. R. Silva, G. B. Pintarelli, D. O. H. Suzuki
Electroporation is a complex, iterative, and nonlinear phenomenon often studied through numerical simulations. In recent years, simulations of tissue electroporation have been conducted with static models. However, the results of a static model simulation are restricted to a fixed protocol signature of the pulsed electric field. In this paper, we describe a novel dynamic model of tissue electroporation
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Suppressing phonon propagation in two-dimensional aperiodic graphene/h-BN superlattice with rough interfaces J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-07 Yuxiang Ni, Xiaoyu Huang, Fangyuan Zhai, Yuanzheng Chen, Hongyan Wang, Honggang Zhang
Thermal phonon localization, rooted in phonon wave nature, is widely observed in disordered atomic systems. Binary superlattices, with structural diversity from abundant interfaces, allow for disorder introduction by engineering interfacial structures. In this study, two different disorder entities, namely, aperiodicity (randomized layer thicknesses) and interfacial mixing, were introduced to graphene/h-BN
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Identifying gap-closings in open non-Hermitian systems by biorthogonal polarization J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-07 Ipsita Mandal
We investigate gap-closings in one- and two-dimensional tight-binding models with two bands, containing non-Hermitian hopping terms, and open boundary conditions (OBCs) imposed along one direction. We compare the bulk OBC spectra with the periodic boundary condition (PBC) spectra, pointing out that they do not coincide, which is an intrinsic characteristic of non-Hermitian systems. The non-Hermiticity
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Thrust measurements of a waveguide electron cyclotron resonance thruster J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-07 M. R. Inchingolo, M. Merino, M. Wijnen, J. Navarro-Cavallé
Direct thrust measurements are performed on a circular waveguide electron cyclotron resonance (ECR) thruster working at 5.8 GHz using a pendulum thrust balance with mechanically amplified displacement. Thrust levels between 1 and 3.5 mN are found for power levels in the range of 60–350 W and xenon flow rate between 2 and 8 SCCM. A maximum thrust efficiency of 3.5% is reached at 2 SCCM and 60 W. Plasma
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The Hull Cutoff condition for magnetic insulation in crossed-field electron devices in the presence of a slow-wave structure J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-06 Patrick Y. Wong, Artem Kuskov, Benjamin Tobias, Jonathon Heinrich
Crossed-Field Vacuum Electron Devices are ubiquitous in the High-Power Microwave field in either an oscillator/source or amplifier variant. A typical configuration consists of a magnetically insulated laminar electron flow in an anode–cathode gap with crossed electric (∝V, voltage) and magnetic (B-) fields and a series of open resonant cavities/vanes located on the anode block that serve as a slow-wave
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Lithography-free tailoring of thin-film nanomorphology for enhanced real-time refractive-index sensing with tunable resonance peaks in the visible spectrum J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-06 Dohyeon Lee, Younghwan Yang, Junsuk Rho
The precise detection of target substances through refractive-index sensing is essential in various fields such as environmental monitoring, food assessment, and optical applications. This study demonstrates a real-time refractive index sensor based on a liquid-infiltrated metal-insulator-metal island (MIMi) structure in a lithography-free manner. In the MIMi structure, the top layer of the metal islands
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A DFT-based kinetic Monte Carlo simulation of multiphase oxide-metal thin film growth J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-06 Ahmad Ahmad, Jie Peng, Khaled SharafEldin, Juanjuan Lu, Haiyan Wang, Anter El-Azab
Functional thin films of nanoscale metal pillars in oxide or nitride matrices known as vertically aligned nanocomposite (VAN) have gained much interest owing to their unique strain-coupled and highly anisotropic properties. So far, the deposition of these films has been explored mostly experimentally. In this work, a density functional theory (DFT)-based kinetic Monte Carlo simulation model using
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Microbubble oscillation on localized heat source affected by dissolved gases in water J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-06 Nao Hiroshige, Shunsuke Okai, Xuanwei Zhang, Samir Kumar, Kyoko Namura, Motofumi Suzuki
Recently, we demonstrated that the local heating of degassed water can generate water vapor microbubbles and induce a rapid flow around the bubble. Although flow generation involves the self-excited oscillation of bubbles at a local heating point, the conditions under which the bubbles oscillate are not fully understood. In this study, the dependence of microbubble size and oscillation frequency on
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Thermal noise calibration of functionalized cantilevers for force microscopy: Effects of the colloidal probe position J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-06 Aubin Archambault, Caroline Crauste-Thibierge, Ludovic Bellon
Colloidal probes are often used in force microscopy when the geometry of the tip–sample interaction should be well controlled. Their calibration requires an understanding of their mechanical response, which is very sensitive to the details of the force sensor consisting of a cantilever and the attached colloid. We present some analytical models to describe the dynamics of the cantilever and its load
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A diamond anvil microassembly for Joule heating and electrical measurements up to 150 GPa and 4000 K J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-05 Zachary M. Geballe, Suzy M. Vitale, Jing Yang, Francesca Miozzi, Vasilije V. Dobrosavljevic, Michael J. Walter
When diamond anvil cell (DAC) sample chambers are outfitted with both thermal insulation and electrodes, two cutting-edge experimental methods are enabled: Joule heating with spectroradiometric temperature measurement and electrical resistance measurements of samples heated to thousands of kelvin. The accuracy of temperature and resistance measurements, however, often suffers from poor control of the
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Understanding layered compounds under high pressure J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-05 J. Pellicer-Porres
This Tutorial focuses on the physics of layered compounds under high pressure. We have chosen h-BN and III–VI layered materials as representative materials. h-BN layers are strictly two-dimensional. Layers in III–VI compounds are more complex, and subtle details in their structural behavior play an important role in the evolution of high pressure properties. They are also interesting because they contain
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Thermal, structural, and conductivity properties of As14Sb26S(60−x)–(AgI)x chalcogenide glasses J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-05 Akila G. Prabhudessai, Sathravada Balaji, Sakthi Prasad, Shweta Chahal, Kaushik Biswas, K. Ramesh, Anupama Yadav, Saswata Chakraborty, Partha Sarathi Kongar, Sayan Chatterjee, Sutanu Dutta, Rana Dasgupta, Pratik Sarkar, K. Annapurna
The present work describes the preparation of a new series of chalcogenide glasses in an As14Sb26S(60−x) (AgI)x system intending to explore its thermal, structural, optical, mechanical, and electrical properties. The differential scanning calorimetry results of the studied glasses show the sharp decrease in glass transition temperature (Tg) with the successive incremental inclusion of AgI in the composition
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Tuning the out-of-plane magnetic textures of electrodeposited Ni90Fe10 thin films J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-04 N. Cotón, J. P. Andrés, M. Jaafar, A. Begué, R. Ranchal
This study investigates the out-of-plane magnetization component of electrodeposited Ni90Fe10 thin films grown under different applied magnetic field conditions. The formation of stripe domains is gradual, as there is a thickness range in which the transcritical shape appears in the hysteresis loops, while only magnetic ripples are measured in the magnetic force microscopy images. For instance, samples
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Room temperature electrical characteristics of gold-hyperdoped silicon J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-04 Shao Qi Lim, Jeffrey M. Warrender, Christian Notthoff, Thomas Ratcliff, Jim S. Williams, Brett C. Johnson
Hyperdoped silicon is a promising material for near-infrared light detection, but to date, the device efficiency has been limited. To optimize photodetectors based on this material that operate at room temperature, we present a detailed study on the electrical nature of gold-hyperdoped silicon formed via ion implantation and pulsed-laser melting (PLM). After PLM processing, oxygen-rich and gold-rich
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Investigation of the large-signal electromechanical behavior of ferroelectric HfO2–CeO2 thin films prepared by chemical solution deposition J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-04 Jan Lübben, Fenja Berg, Ulrich Böttger
In this work, the piezoelectric properties of chemical solution deposition derived ferroelectric HfO2–CeO2 thin films deposited on platinized silicon substrates are investigated. Large-signal strain-field measurements show an effective piezoelectric coefficient of approximately d33,eff=12.7pm/V for 17 mol. % cerium under bipolar excitation and d33,eff=8pm/V under unipolar excitation. Progressive bipolar
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Composition dependence of anomalous Nernst effect in amorphous TbFeCo thin films with perpendicular magnetic anisotropy J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-04 Ryo Ando, Takashi Komine
In this study, we systematically investigated the anomalous Nernst effect in perpendicularly magnetized amorphous TbFeCo thin films with various compositions. It was found that the magnitude of the off diagonal thermopower (ODT), which corresponds to the anomalous Nernst effect, can be uniformly explained with respect to the Tb content regardless of the concentration above or below the compensation
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Nonvolatile memory cells from hafnium zirconium oxide ferroelectric tunnel junctions using Nb and NbN electrodes J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-04 Jessica Haglund-Peterson, Benjamin L. Aronson, Samantha T. Jaszewski, Scott Habermehl, Giovanni Esteves, John F. Conley, Jon F. Ihlefeld, M. David Henry
Ferroelectric tunnel junctions (FTJs) utilizing hafnium zirconium oxide (HZO) have attracted interest as non-volatile memory for microelectronics due to ease of integration into back-end-of-line (BEOL) complementary metal oxide semiconductor fabrication. This work examines asymmetric electrode NbN/HZO/Nb devices with 7 nm thick HZO as FTJs in a memory structure, with an output resistance that can be
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Electric manipulation of the magnetization in heterostructure Pt/Co/Bi2Se3 J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-04 Zhen Wang, Fenglong Wang, Hao Shen, Zhaoyang Hou, Jinguo Wang, Gang Shi, Chunlong Xu
Spin–orbit torque (SOT) can provide efficient electrical manipulation of magnetism via applying electrical current to breaking the symmetry of damping-like torque. In the heterojunction of heavy and ferromagnetic metal, Dzyaloshinskii–Moriya interaction (DMI) is one of the key ingredients for stabilizing chiral spin structures, like chiral domain walls. Meanwhile, materials with larger charge-spin
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Static and shock compression studies of eutectic high-entropy alloy AlCoCrFeNi2.1 to ultrahigh pressures J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-04 Kento Katagiri, Sara J. Irvine, Anirudh Hari, Ryosuke Kodama, Norimasa Ozaki, Takayoshi Sano, Jie Ren, Wuxian Yang, Wen Chen, Matthew P. Clay, Andrew D. Pope, Seth Iwan, Leora E. Dresselhaus-Marais, Yogesh K. Vohra
The high-entropy alloy with composition AlCoCrFeNi2.1, additively manufactured with the laser powder-bed fusion technique, has a far-from-equilibrium BCC/FCC eutectic nanolamellar structure. We studied the high-pressure response of this alloy under both static compression and high-strain rate shock compression. The response to static compression using a diamond anvil cell was studied at pressures up
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Structure and thermal conductivity of high-pressure-treated silica glass. A molecular dynamics study J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-04 Adam Puchalski, Anton Hul, Jihui Nie, Tomasz K. Pietrzak, Pawel Keblinski
High-pressure treatment of oxide glasses can lead to significant alteration of various material properties such as increased density, ductility, and elastic moduli. In this study, a model of melt-quenched bulk silica glass was subject to high-pressure treatments (up to 16 GPa) using molecular dynamics simulations. The thermal conductivity of such prepared glass structures was determined using the equilibrium
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Hugoniot measurements of the 1,3,5-triamino-2,4,6-trinitrobenzene (TATB) formulation T2 up to 70 GPa J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-04 A. Sollier, P. Hébert, E. Lescoute, P. Lafourcade
We present shock Hugoniot measurements of 1,3,5-triamino-2,4,6-trinitrobenzene (TATB) T2 formulation up to 70 GPa. Despite the use of very thin samples, strong reactivity is evidenced above 30 GPa, indicating that our high pressure points are rather overdriven reaction product measurements than inert Hugoniot measurements. However, the comparison of these new high pressure Hugoniot data obtained on
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Phase modulation by quantum gates of two microwave pulses in the framework of spin-boson model J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-04 Cheng Chen, Jiarui Zeng, Yao Yao
As one of the most successful platforms of quantum control, trapped ions can be modulated by sequential microwave pulses to realize high-fidelity quantum logic gates, and dephasing noise may lead to invalidation of phase locking. In this work, we utilize the Dirac–Frenkel time-dependent variational approach with Davydov ansatz to simulate spin echo dynamics in the framework of spin-boson model. As
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Calibration of second harmonic generation technique to probe the field-effect passivation of Si(100) with Al2O3 dielectric layers J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-04 B. Obeid, L. Bastard, A. Bouchard, V. Aubriet, K. Jouannic, D. Le Cunff, O. Gourhant, I. Ionica
Optical second harmonic generation (SHG) can be employed to characterize the passivation quality of semiconducting material interfaces. The interface electric field (EDC) related to the existing charges at and near the interface, including the fixed oxide charges Qox, gives rise to the electric field induced second harmonic phenomenon. In this paper, we calibrate the SHG response for EDC measurement
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A phenomenological thermodynamic energy density function for ferroelectric wurtzite Al1−xScxN single crystals J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-04 Yijia Gu, Andrew C. Meng, Aiden Ross, Long-Qing Chen
A Landau–Devonshire thermodynamic energy density function for ferroelectric wurtzite aluminum scandium nitride (Al1−xScxN) solid solution is developed. It is parametrized using available experimental and theoretical data, enabling the accurate reproduction of composition-dependent ferroelectric properties, such as spontaneous polarization, dielectric permittivity, and piezoelectric constants, for both
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A density functional tight-binding based strategy for modeling ion bombardment and its application to Ar bombardment of silicon nitride J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-04 Erik S. Cheng, Peter L. G. Ventzek, Gyeong S. Hwang
In many modern applications, it is important to understand mechanisms of non-equilibrium chemistry and physics that are driven by low energy ion bombardment of solid surfaces. However, the study of these processes has been challenging as it demands a relatively unique balance between chemical fidelity and computational cost. To this end, we have proposed and constructed a new, high-throughput simulation
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Current transport mechanisms of metal/TiO2/β-Ga2O3 diodes J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-04 Nolan S. Hendricks, Ahmad E. Islam, Elizabeth A. Sowers, Jeremiah Williams, Daniel M. Dryden, Kyle J. Liddy, Weisong Wang, James S. Speck, Andrew J. Green
β-Ga2O3 is of great interest for power electronic devices with efficiency beyond current generation Si, 4H-SiC, and GaN devices due to its large breakdown electric field of ∼8 MV/cm. However, taking advantage of this large field strength in power diodes requires device engineering to reduce leakage current that arises at high electric fields. In this work, we elucidate the current transport mechanisms
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Ultrahigh power factor and excellent solar efficiency in two-dimensional hexagonal group-IV–V nanomaterials J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-04 Amit K. Bhojani, Hardik L. Kagdada, Dheeraj K. Singh
The mesmerizing physical properties of two-dimensional (2D) nanomaterials have resulted in their enormous potential for high-power solar energy conversion and long-term stability devices. The present work systematically investigated the fundamental properties of monolayered 2D group-IV–V materials using a combined approach of first-principles calculations and Boltzmann transport theory, specifically
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Molecular simulation of different types of polysilsesquioxane doped cellulose insulating paper: A guide for special cellulose insulating paper J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-04 Zhenglin Zeng, Weimin Tan, Yanhe Deng, Quan Cheng, Liuyue Fu, Chao Tang
To develop special insulating paper is of great significance to promote the service life of transformers. Using molecular simulation to guide the development of special insulating paper can greatly reduce the trial-and-error rate and waste of resources in traditional experiments. The effect of different types of polysilsesquioxane (POSS) on cellulose insulating paper was investigated by using molecular
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Effects of structural defects on optical properties of InxGa1−xN layers and quantum wells J. Appl. Phys. (IF 3.2) Pub Date : 2024-03-01 Z. Liliental-Weber, Roberto dos Reis
This review concentrates on the microstructure of InxGa1−xN layers and quantum wells (QWs) in relation to their optical properties. The microstructure of InxGa1−xN, with a constant In(x) concentration, shifts with layer thickness. Only layers below 100 nm for x = 0.1 are nearly defect-free. A photoluminescence peak is observed at 405 nm, in line with ∼10% In, suggesting band-edge luminescence. Layers