First-principles calculations are used to investigate electronic and field emission characteristics of (5, 5) capped BeO nanotubes (BeONTs), which indicate that their emission currents under external electric fields are close to those of carbon nanotubes, and decagons on their apexes are the most probable positions for electron emission. In addition, work functions of the (5, 5) BeONTs decrease linearly

In silicon photonics, silicon microdisk resonators with movable waveguides driven by electrostatic comb-drive actuators have been used as wavelength-selective switches. However, the sidewall roughness of silicon waveguides formed by the etching process is the main cause of optical loss in such devices, which leads to the deterioration of the wavelength selectivity. In this study, we fabricated a silicon

Chromium is a frequently encountered material in modern nanofabrication, directly as a functional material (e.g., photomask generation) or indirectly as a hard mask (e.g., to etch quartz). With the continuous downscaling of devices, the control of the feature size of patterned Cr and CrOx becomes increasingly important. Cr and CrOx etching is typically performed using chlorine–oxygen-based plasma chemistries

Hole-transport material-free perovskite solar cells were prepared by utilizing a spin-coating method. To optimize the dropping conditions of the toluene as an antisolvent in the nitrogen atmosphere, the CH3NH3PbI3/TiO2/fluorine-doped tin oxide (FTO)/glass specimen consisted of a high-density tissue, and crystal faults such as voids and cracks were not observed on its surface. By controlling the thickness

Individual charge traps in the gate stack of gate-all-around field-effect-transistors have been identified from their random telegraph noise (RTN) characteristics in the time and frequency domains. The energy level and depth location of the corresponding charge traps were extracted from capture/emission time constant and corner frequency. The charge traps were determined to be the excited states of

We report on the fabrication and characterization of fully vertical gallium nitride trench metal oxide semiconductor field effect transistors on native substrates with a metal-free gate first process and a chlorine-free trench etching method. Trenches were fabricated using sulfur hexafluoride and argon plasma etching in combination with alkaline wet etching posttreatment to create crystal oriented

Sn films of four thicknesses, 50, 200, 500, and 1000 nm, were deposited on Si (111) substrates by a thermal evaporation technique, and the effects of thickness on the structural, surface morphology, electrical, and wettability properties were investigated. X-ray diffraction studies revealed the coexistence of predominantly β-Sn (metallic phase) and small concentration of α-Sn (semiconducting phase)

This paper investigates the physical process of polymer nanostructure deposition from a heated atomic force microscope (AFM) tip and focuses on the role of capillary-driven flow on deposited feature sizes during thermal dip-pen nanolithography. We used a heated AFM tip to deposit 50–350 nm wide poly(methyl methacrylate) nanoribbons by varying tip temperature, tip speed, and polymer molecular weight

While electron-beam (e-beam) lithography is widely employed in the pattern transfer, the proximity effect makes features blurred, and the stochastic nature of the exposure and development processes causes the roughness in the feature boundaries. In an effort to reduce the proximity effect and line edge roughness (LER), it is often necessary to estimate the critical dimension (CD) and LER. In our previous

The fabrication of resist patterns using UV nanoimprinting is required on consideration of the reduction of the use of hydrocarbons along recent amendments for environmental sustainability. In this study, we investigated the generation of resist pattern defects through UV nanoimprinting in a readily condensable trans-1,3,3,3-tetrafluoropropene (TFP) gas with a low global warming potential for elimination

Theoretical analysis of field electron emission must consider many parameters, one of the most critical being the field enhancement factor (FEF). In a single tip form, the FEF can vary several orders of magnitude and depends only on the system geometry, when the gap length between the emitter and counter-electrode is much greater than the height of the emitter. In this work, we determine very accurate

The fabrication of alkoxysilane-based nickel (Ni)–palladium (Pd) bimetallic nanoparticle catalysts with several compositions (Pd—0.001M and Ni—0.001–0.1M) was attempted for the first time; these materials were investigated for use as low-cost catalysts in the hydrogen evolution reaction (HER). Functional alkoxysilane [2-(3,4 epoxycyclohexyl)ethyltrimethoxysilane]-assisted conversion of Pd2+ to Pd0

In this study, we investigate the residual stress gradient of aluminum nitride thin film deposited by reactive pulse DC magnetron sputtering technique on a 200 mm diameter silicon wafer with a 1 μm layer of plasma enhanced chemical vapor deposition tetraethylorthosilicate. Stress measurements are obtained using in situ fabricated rotational beam microstructures. The rotating beam moves in response

The performance of silicon gated field emission arrays (GFEAs) was characterized before and after ultraviolet (UV) light exposure. Emission and gate leakage currents were measured on 1000 × 1000 tip arrays by sweeping the gate voltage to 40 V DC with a fixed DC collector voltage of 100 V DC. UV light exposure was used to desorb water molecules from the GFEA surfaces. It was found that, before UV exposure

Detection of the SARS-CoV-2 spike protein and inactivated virus was achieved using disposable and biofunctionalized functional strips, which can be connected externally to a reusable printed circuit board for signal amplification with an embedded metal–oxide–semiconductor field-effect transistor (MOSFET). A series of chemical reactions was performed to immobilize both a monoclonal antibody and a polyclonal

Electron cloud is a persistent problem in operating modern accelerators. It might be eliminated by reducing the secondary electron yield (SEY), which is a property of the material of vacuum chambers. In the present study, the SEYs of oxygen-free copper samples are dramatically mitigated by grooving their surfaces with a laser-etching technique. Such mitigation is realized by trapping incident primary

The outgassing rates of various ceramic materials were systematically investigated. This paper intercompares the most relevant ceramic material classes used in vacuum technology, namely, oxide (five different types investigated) and non-oxide based ceramics, including nitrides (four different types) and carbides (three different types). For this purpose, the Outgassing Measurement Apparatus, which

We studied the formation of ideally ordered nanoporous zirconia by anodizing Zr having a texturing pattern. A texturing pattern was formed on a Zr surface by peeling off a sputtered zirconium film from a metal (Ni) mold having an ordered array of convexes. In contrast to texturing by nanoimprinting, the present texturing process never requires the pressing of a mold onto the Zr surface. During the

Results from a particle-in-cell simulation study of L3Harris CWM-75 kW are presented; the continuous wave cooker magnetron typically operates at 18 kV, 5 A, 1900 G, 896–929 MHz. The startup process of the device has been simulated in 3D by using the PIC code VSim. The startup behavior was examined with (1) no priming, (2) RF priming, and (3) cathode modulation. Under no priming, the simulated device

In this work, a large size x-ray detector with a 25 mm2 active area is demonstrated based on a thick 4H-SiC p-i-n structure. The detector exhibits obvious merits of high photon sensitivity over 4 × 104 μC Gy−1 cm−2, good photon-response linearity, and high-temperature operation compatibility. Meanwhile, due to the ultralow leakage current level achieved, single photon detection performance for x-ray

In this paper, we present results on optimization of photoresist (PR) plating molds for patterning of a nickel masking layer. The process can be adopted in a number of processes, including deep reactive ion etching of strongly bonded materials with high chemical resistance, such as fused silica (FS), borosilicate glass, and silicon carbide. The desirable plating mold attributes, such as thick PR, controlled

For more than two decades, carbon nanotubes (CNTs) have shown great potential for a wide range of applications. Several methods are known to synthesize CNTs, though only a few of them are able to produce good quality and economically available CNTs. Chemical vapor deposition (CVD) is one of those methods that produce economically feasible and good quality CNTs onto specific substrates, even with nanopatterning

The Schwarz–Christoffel transformation is used to analytically evaluate the field enhancement factor close to the apex of two-stage conducting structures consisting of a vertical line centered on the top of an isosceles trapezoidal protrusion on an infinite line. This way the validity of the Schottky conjecture (SC) is assessed for different ratios involving the dimensions of the system, which is expected

Aluminum gallium nitride (AlGaN) nanowires have become an emerging approach for semiconductor deep ultraviolet light-emitting devices. To further improve the device performance, it is critical to understand the optical quality of AlGaN nanowires. However, today, the room-temperature internal quantum efficiency (IQE) of AlGaN nanowires is predominantly analyzed by the temperature-dependent photoluminescence

A model of electron gas scattering at surface inhomogeneities was developed and applied to describe a surface roughness influence on the electrical resistivity of thin metallic films. The model is developed to be simple enough for fast calculations without detailed investigation of surface topology. The film’s shape is assumed to be described by the average thickness, the surface rms, and the correlation

Cathodoluminescence (CL) degradation measurements on Y2O3:Tm3+ nanoparticles were made to test for potential application as a blue phosphor in low-voltage field emission displays. The incorporation of Tm3+ into the Y3+ sites in the Y2O3 lattice was confirmed by x-ray photoelectron spectroscopy and CL spectra. The Y2O3:Tm3+ nanophosphor was investigated under vacuum and oxygen (O2) backfilled conditions

Silicon field emitter arrays (Si FEAs) are being explored as an electron source for vacuum channel transistors for high temperature electronics. Arrays of 1000 × 1000 silicon tip based gated field emitters were studied by measuring their electrical characteristics up to 40 V of DC gate bias with a 1.3 mA emission current at different temperatures from 25 to 400 °C. At ∼350 °C, residual gas analyzer

Due to the dramatic downscaling of device features in recent technology nodes, characterizing the electrical properties of these structures is becoming ever more challenging as it often requires metrology able to probe local variations in dopant and carrier concentration with high accuracy. As no existing technique is able to meet all requirements, a correlative metrology approach is generally considered

This study introduces an easy methodology to test and analyze experimental field electron emission current-voltage data from metallic single-tip emitters; this novel and easy methodology is called the Murphy–Good plots. Tungsten electron emitters were used as an example and were prepared by the electrochemical etching process. The current-voltage characteristics are obtained in high vacuum levels and

A novel numerical method for analyzing the deformation of molding patterns on UV imprint with soft molds considering thermal deformation in addition to UV shrinkage and curing is presented. In the case of UV imprint using an easily deformable mold-like PDMS, transfer error on UV resin is caused by thermal expansion/contraction arising from UV reaction heat and by UV shrinkage. Specifically, when a

Phase resolved optical emission spectroscopy (PROES) measurements were combined with measurements of the optical emission intensity (OEI) and electrical characteristics (RF current and voltage, power, and DC bias voltage) as a function of time during the re-ignition of Ar plasmas pulsed at 100 Hz and 10 kHz. The OEI exhibits a large overshoot at the 100 Hz pulsing rate even though no such overshoot

Accurate secondary ion mass spectroscopy measurement of nitrogen in niobium relies on the use of closely equivalent standards, made by ion implantation, to convert nitrogen signal intensity to nitrogen content by determination of relative sensitivity factors (RSFs). Accurate RSF values for ppm-range nitrogen contents are increasingly critical, as more precision is sought in processes for next-generation

We have measured the water and hydrogen outgassing rates of seven vacuum chambers of identical geometry but constructed of different materials and heat treatments. Chambers of five different materials were tested: 304L, 316L, and 316LN stainless steels; titanium (ASTM grade 2); and 6061 aluminum. In addition, chambers constructed of 316L and 316LN stainless steel were subjected to a vacuum-fire process

This work presents a compact ion-pump that utilizes pyroelectricity for ionization of ambient molecules. The pyroelectric ionization is realized by heating a lithium niobate (LiNbO3) crystal with low voltage resistive heating (10 V drive voltage, 0.5 W Joule heating) to generate a high voltage across the poled surface of the crystal. Pyroelectrically generated electrons from the polarized surface of

Silicon field emitter arrays (FEAs) with different tip sizes and quantities were fabricated by saw dicing and anisotropic wet chemical etching by tetramethylammonium hydroxide. The tip is formed by the different etching rates of the crystal facets leading to a sharp pyramid based on {103} planes on the top and a hexadecagon based on {331} and {221} planes on the bottom. Electrical measurements at 10−5 mbar

The scanning tunneling microscope (STM) has enabled manipulation and interrogation of surfaces with atomic-scale resolution. Electronic information about a surface is obtained by combining the imaging capability of the STM with scanning tunneling spectroscopy, i.e., measurement of current-voltage (I/V) characteristics of the surface. We propose a change in the STM feedback loop that enables capturing

A variety of nonvolatile memory (NVM) devices including the resistive Random Access Memory (RRAM) are currently being investigated for implementing energy-efficient hardware for deep learning and artificial intelligence at the edge. RRAM devices are employed in the form of dense crosspoint or crossbar arrays. In order to exploit the high-density and low-power operation of these devices, circuit designers

Electromigration—a critical failure mode of metal interconnects in integrated circuits—has been exploited for constructing nanometer-sized gaps (or nanogaps, less than a few nanometers) on metallic nanowires. Electromigrated nanogaps have been utilized extensively in the field of nanotechnology and have demonstrated to be an effective platform for electrically accessing small things such as molecules

Ionic liquid/ionogel gate dielectrics can provide significant advantages for transistor architectures that utilize high surface area semiconductors and/or nonplanar substrates because of their cleanroom-free, liquid-based processability and their inherently large electrostatic double layer capacitance. These attributes of ionogels have already enabled the facile fabrication of several up-and-coming

Planar metal-insulator-semiconductor capacitors are fabricated on native gallium nitride substrates with different gate dielectrics, namely, silicon dioxide, silicon nitride, and aluminum oxide. The leakage current was measured to determine their robustness regarding electrical breakdown. Hysteresis effects were evaluated for the different gate dielectrics and for the substrate and the epitaxial surface

ZnO thin film transistor with high-k NbLaO/SiO2 bilayer gate dielectric was fabricated by sputtering, and the temperature dependence of the electrical properties of the device was investigated in the temperature range of 293–353 K for clarifying thermally activated carrier generation and carrier transport mechanisms in the conducting channel. With the increase in the temperature, the transfer curve

Reported is the manufacture and optimization of inverted micropyramid cavity structures into thermoplastic sheets using roll-to-roll (R2R) embossing. To manufacture the master, an ultraprecision diamond machining method was applied to create seamless surface structures into a copper-coated hot embossing roller. Using the hot embossing process, the roller features were successfully transferred to 2 mm

The design, fabrication, and characterization of single metal gate layer, metal-oxide-semiconductor (MOS) quantum dot devices robust against dielectric breakdown are presented as prototypes for future diagnostic qubits. These devices were developed as a preliminary solution to a longer term goal of a qubit platform for intercomparison between materials or for in-line diagnostics and to provide a testbed

Crystalline thin films of Eu, Dy, and Er-doped CaWO4 and CaMoO4 of thicknesses 100–150 nm were synthesized by pulsed laser deposition on fused silica substrates. The atomic force and scanning electron microscopy studies confirm uniform and dense surface morphology of the samples. Tetragonal CaWO4 films show preferred growth of crystallites of (112) orientation. CaMoO4 shows texturing of crystallites

We report observation of the piezoresistive effect of β-Ga2O3 Schottky diodes and investigate its application for strain gauge sensors. The Schottky diode-based strain gauge exhibits resistance on the order of 107 Ω, which allows low power applications. A large gauge factor of −201 ± 43 is measured from a Pt/( 2 ¯01) β-Ga2O3 Schottky diode at room temperature, enabling the strain-induced resistance

Simulation has been performed on fully lead-free inorganic cesium germanium tri-iodide (CsGeI3) perovskite solar cell heterostructure and achieved a champion power conversion efficiency (PCE) of ∼18.30% with significantly improved device parameters. The influence of thickness of an electron transport layer, a hole transport layer, an absorber, defect density, doping concentration, electron affinity

This study aimed to reveal the electrical characteristics of the composite electrodes of Li-ion batteries. LiCoO2 electrodes were analyzed using atomic force microscopy, and three-dimensional datasets of current–voltage (I–V) curves (IV-datacubes) were obtained. The IV-datacubes were then analyzed using principal component analysis to determine the typical I–V curve corresponding to each LiCoO2 particle

Optimizing the locations and sizes of droplets is the key to reducing defects and increasing throughput of ultraviolet nanoimprint lithography. In practice the templates are composed of regions with different structures. The interface between structures will generate complicated fluid flow behavior that will slow the filling time. Here, we explore several strategies through simulations to distribute

The high suitability of hydrogen silsesquioxane (HSQ) as e-beam resist has long been known. Despite its undoubtedly good and reliable properties, HSQ nevertheless proves to be problematic in certain aspects due to its relatively short shelf-life and the small processing window between coating preparation and exposure. We thus intended to optimize the silsesquioxane with respect to a prolonged shelf-life

Computational lithography is typically based on a model representing the lithographic process where a typical model consists of three components, i.e., line spread function, conversion formula (exposure-to-developing rate conversion), and noise process (exposure fluctuation). In our previous study, a practical approach to modeling the e-beam lithographic process by deriving the three components directly

Nanofabrication is a remarkably effective technique to create desirable nanoscale patterns. In this work, the effect of surface nanofabrication on altering virus adhesion to the substrates was examined. Arrays of nanoholes, 50 nm in diameter, 22 nm deep, and 100 nm in pitch distance, were created on silicon (Si) wafers by electron-beam lithography and reactive ion etching. MS2 coliphage, which is 26 ± 2 nm

We present a new Li source for focused ion beam applications. Based on an AuSi eutectic alloy, Li is added as an impurity to minimize effects from degradation when exposed to air. We show the source is stable over the course of an hour and spot sizes ≲ 10 nm can be achieved. The Li beam can achieve hundreds of nanometer ranges in semiconductors with minimal damage being generated along the path length

Our study refers to the highly stretchable elastomer PDMS (polydimethylsiloxane), a material used with a wide range of applications. Its basic mechanical properties can be tuned, e.g., by varying the curing conditions; moreover, its surface properties can be tuned by modification techniques. We modified our PDMS by irradiating the samples with an excimer lamp at 172 nm. Such a treatment hardens the

In this work, self-heating effects (SHE) in nanometer-scale metal-oxide-semiconductor field-effect transistor structures—namely, FinFETs (FFs), nanosheet gate-all-around FETs (NSFs), and nanowire gate-all-around FETs (GAAFs)—are investigated via three-dimensional device electrothermal simulations using technology computer-aided design software tools. Initially, transistor design parameter values are

A cerium hexaboride (CeB6) single crystal grown by the floating-zone method has a low work function of about 2.6 eV, and along with lanthanum hexaboride (LaB6), it is one of the most popular cathode materials. It has been widely used as the thermionic emitter of electron microscopes, such as SEMs and TEMs. However, cold-field emitters (CFEs) based on CeB6 and LaB6 have not been put to practical use

A recently developed novel methodology for electromigration (EM) failure assessment in power/ground grids of integrated circuits is employed in the electronic design automation tool prototype. The tool performs the analysis of stress evolution in interconnect trees for detecting EM-induced voiding locations and tracks resistance increase in the voided wires based on a physics-based model of voiding

We report the results of the design, simulation, fabrication, and cold-test measurements of millimeter-band 2D planar microstrip slow-wave structures (SWSs) on dielectric substrates. Such structures have a high slow-wave factor, which allows for low-voltage operation and reduction in the size and weight of the device. A low-cost and flexible fabrication technology based on magnetron sputtering and

Molecular beam epitaxial (MBE) deposition allows for the epitaxial growth of materials requiring atomically precise control of nanometer thick layers. A key concern with the growth of smaller bandgap materials on larger bandgap substrates via MBE is the radiative coupling of the deposited layer with the heater, which can lead to uncontrolled increases in temperature if not properly accommodated for

We observed the polarity-dependent thermionic emission (TE) and conversion characteristics of n-type GaN-based cathodes with Cs adsorbed on their surfaces. TE current from the surface of an n-GaN sample with N-polarity was 0.18 mA at an applied anode voltage of 30 V at 500 °C. This TE current was markedly higher than that of a sample with Ga-polarity, which had a corresponding TE current of 0.063 mA

We explore the structure–property relationships in hybrid organosilicate glasses that form a special class of materials for use in advanced interconnects to improve their mechanical reliability by exploiting the structural characteristics most effectively. Our results show that hybrid organosilicate glasses that are hyperconnected and derived from organic linkers with optimal molecular geometry lead