Device reconfigurability refers to the ability to choose N or P type for the same structure. Such reconfigurable operation is demonstrated herein for a silicon nanotube (SiNT) structure using three-dimensional (3D) technology computer-aided design (TCAD) numerical simulations. The reconfigurable field-effect transistor (RFET) can exhibit N- or P-type operation via the application of an appropriate

Over recent decades, much effort has been invested in the implementation of digital circuits using multivalued and fuzzy logic, as they are more similar to real-world arithmetic and logic. Ternary logic can be implemented in molecular electronics using transistors based on benzene rings because of their special characteristics. A dual-gate molecular field-effect transistor based on the oligo (phenylene

The quantum-dot cellular automata (QCA) computing paradigm is used to implement Rule 110, a unique one-dimensional cellular automata (CA) that has been proven to be Turing complete. A Turing complete architecture is capable of universal computing, which means that it could be used to implement any arbitrary computation. The optimized design of a single Rule 110 cell is presented, first using Boolean

The effects of lead positions and lead-ring coupling regimes are investigated for spin-related transport through a two-dimensional network of quantum nanorings (2DNQRs) considering Rashba spin–orbit interaction (RSOI) and magnetic flux. A matrix representation of the transmission and reflection coefficients through a single ring connected to the arbitrary number of leads has been introduced. As a specific

This paper presents an optimum design of an ultra-wideband (UWB) 2.5–10.5-GHz low-noise amplifier (LNA) in 180-nm and 65-nm radiofrequency (RF)-complementary metal–oxide–semiconductor (CMOS) technology. A novel input matching network employing resistive–inductive feedback and a noise-canceling technique is proposed to achieve broadband matching as well as a low noise figure (NF). Moreover, a current-reused

First-principles calculations based on the full-potential linear augmented plane wave approach are applied herein to investigate the electronic, optical, and electrical properties of intrinsic point defects in cubic ZrO2. The exchange–correlation potential is treated using the recent modified Becke–Johnson potential (TB-mBJ) proposed by Tran and Blaha in addition to the generalized gradient approximation

In this paper, two ternary nonvolatile magnetic flip-flops are proposed to provide power gating in ternary systems. The proposed designs sequence ternary data in ternary data paths in their normal function. Furthermore, they can backup and restore the data of a ternary system before and after power gating. The proposed designs rely on assistance from the spin-Hall effect for the data backup operation

Memristor devices are crucial for developing neuromorphic computers and next-generation memory technologies. In this work, we provide a comprehensive modelling tool for simulating static DC reading operations of memristor crossbar arrays that use passive selectors with matrix algebra in MATLAB. The software tool was parallel coded and optimised to run with personal computers and distributed computer

Two new vertical resonant tunneling devices (RTDs) of different sizes are proposed herein to achieve negative differential resistance with enhanced tunneling and peak-to-valley ratio (PVR) stability. The proposed structures are of the form n+–p−–p+ (S2) and n+–[p−–n+]–p−–p+ (S1) with different electrodes made of parallel graphene nanoribbon and graphene sheet (S2) or bilayer graphene (S1). The results

A strained Ge1−x−ySixSny/Ge1−a−bSiaSnb direct type II staggered heterojunction n-channel tunneling field-effect transistor (FET) with a dual-material double gate is proposed herein. A high-K gate dielectric is used to improve the overall device performance. The energy bandgap for strained Ge1−x−ySixSny grown on a relaxed Ge1−a−bSiaSnb layer is determined using the generalized approach of Menendez and

A systematic theoretical investigation is carried out on the possible piezoelectric effect in the half-Heusler FeVX (X = P, As, Sb) compounds crystallizing in the cubic MgAgAs-type structure C1b by combining density functional theory (DFT) and perturbation theory (DFPT) based on the pseudopotential plane wave (PP-PW) method implemented in the ABINIT code. The ground-state properties such as the lattice

A new compact model for HfO2-based ferroelectric tunnel junction (FTJ) memristors is constructed based on detailed physical modeling using calibrated TCAD simulations. A multi-domain configuration of the ferroelectric material is demonstrated to produce quasi-continuous conductance of the FTJ. This behavior is demonstrated to enable a robust spike-timing-dependent plasticity-type learning capability

Over the last few years, ab initio methods have become an increasingly popular tool to evaluate intrinsic carrier transport properties in 2D semiconductors. The lack of experimental information, and the progress made in the development of DFT tools to evaluate electronic band structures, phonon dispersions, and electron–phonon scattering matrix-elements, have made them a favored choice. However, a

The variability of switching parameters in redox-based resistive switching RAM (ReRAM) devices is investigated by a 3D kinetic Monte Carlo approach. This physics-based model can simulate the filamentary resistive switching in the electroforming, SET and RESET processes and captures their key features. It allows to predict the impact of the forming and switching conditions on the fluctuations of key

Abstract Monolayer silicene and germanene have received intensive attention due to their good compatibility with current Si-based electronics. However, the lack of a bandgap severely limits their applications in complex electronic circuits. To overcome this obstacle, we build Si1−xGex superlattices (SLs) and further cleave them into nanoribbons to tune the electrical properties of silicene and germanene

Numerical solutions of low-frequency electromagnetic problems are not a simple task, due to the inherent nature of their electrically small structures. The wavelength is very small relative to the size of the objects considered in these problems. Therefore, extremely fine meshes have to be used in the numerical solutions to perform accurate geometrical modeling of the scatterers and/or antennas. This

Energy harvesting using triboelectric nanogenerators (TENGs) is an effective strategy to supply power to microelectronics, the Internet of Things, etc. Generally, the output performance of a triboelectric nanogenerator is limited by the breakdown of air. Hence, we systematically investigate a TENG operating in the contact-separation mode and single-electrode mode from the perspective of the electric

A new analytical model for the current–voltage characteristic of a resonant tunneling diode (RTD) is presented herein, being derived from the basic integral of the Tsu–Esaki equation. The model is physics based and developed as a function of material parameters such as the effective mass, barrier heights, and Fermi levels as well as geometrical parameters such as the barrier height and well width.

Hole-doping of GaX, InX (X = S or Se) and SnO monolayers is predicted to induce a stable ferromagnetic order in these two-dimensional materials, making them potentially interesting for nanoscaled spintronic devices. Ferromagnetism in these materials arises from their peculiar Mexican-hat valence band edge structure, which leads to a Stoner instability. We discuss here the results from first-principles

Intercalation doping is emerging as a prospective solution to enhance the performance of graphene nanoribbon interconnects. In this paper, the radio frequency (RF) analysis of stage-2 arsenic pentafluoride- and lithium-doped multilayer graphene nanoribbons (MLGNRs) has been carried out for global-level interconnects in terms of skin depth, surface impedance, critical ratio (CR), transfer gain, and

This paper presents a review on the development of parasitic-capacitance modeling for metal–oxide–semiconductor field-effect transistors (MOSFETs), covering models developed for the simple parallel-plate capacitance and the nonplanar and coplanar plate capacitances required for the intrinsic and extrinsic part of such devices. A comparative study of various extrinsic capacitance models with respect

The potential of AlGaN-based ultrawide-bandgap high-electron-mobility transistors (HEMTs) with high (> 60%) Al composition for use in high-power switching applications is studied. The devices are simulated with a gate length of 2 µm, and their figures of merit are evaluated as functions of the gate-to-drain distance, operating temperature, and different substrates. At room temperature (RT), the maximum

Abstract In this research, using nonequilibrium green’s function integrated with density functional theory, we investigate the electronic transport properties of a β-diketone (2,6-dimethyl-3,5-heptanedione) molecular wire induced by hydrogen transfer. The title molecule can be converted between two enol and keto forms. The electronic transmission factors, spatial spreading of molecular projected self-consistent

A distinctive charge plasma approach is used to propose a novel dual-metal-gate (DMG) recessed-source/drain dopingless junctionless transistor (Re S/D DLJLT) in which the source/drain (S/D) series resistance is reduced without any increment of the gate-to-drain Miller capacitance. In this device, the charge plasma approach is applied to induce an N+ (virtually doped) S/D region by using metals with

Thermal transport in single-layer MoS2 nanoribbons (SLMOSNRs) has been comprehensively studied using equilibrium molecular dynamics (EMD) simulations based on the Green–Kubo formulation. The room-temperature thermal conductivity of a pristine ~ 10 nm × 4 nm zigzag MoS2 nanoribbon is computed to be ~ 117 W m−1 K−1 using the Stillinger–Weber (SW) interatomic potential. The thermal conductivity is also

Field-effect transistor (FET)-based biosensors with stacked gate oxides provide low leakage current and high sensitivity. However, an undesirable interfacial layer of silicate and silicon dioxide is formed in between the stacked oxides. In this paper, an underlap silicon-on-nothing FET-based biosensor with high-K gate oxide is presented for the detection of charged biomolecules, thereby removing the

Graphene nanoribbons (GNRs) are a good replacement material for silicon to overcome short-channel effects in nanoscale devices. However, with continuous technology scaling, the variability of device parameters also increases. Indeed, process, voltage, and temperature (PVT) variations affect the performance of GNR devices because of their small size. Moreover, the bandgap of GNRs is strongly affected

The aim of this paper is to present a flexible and open-source multi-scale simulation software which has been developed by the Device Modelling Group at the University of Glasgow to study the charge transport in contemporary ultra-scaled Nano-CMOS devices. The name of this new simulation environment is Nano-electronic Simulation Software (NESS). Overall NESS is designed to be flexible, easy to use

Gallium nitride (GaN) is a well-investigated material that is applied in many advanced power electronic and optoelectronic devices due to its wide bandgap. However, derivatives of its monolayer form, such as bilayer structures, have rarely been reported. We study herein the electronic and optical properties of GaN bilayer structures that are rotated in the plane at several optimized angles by using

A dual-diamond-ring photonic crystal fiber (PCF)-based sensor is proposed and analyzed herein for the detection of the concentration of alcohol in aqueous solution. Commercially available finite element method (FEM)-based simulation software (COMSOL Multiphysics® version 4.3b) is utilized to conduct a rigorous numerical investigation. The sample is injected inside the fiber. Several crucial optical

An analysis of the application of neural networks as a reliable, precise, and fast tool in open-cell photoacoustics setups for the recognition of microphone effects in the frequency domain from 10 Hz to 100 × 104 Hz is presented. The network is trained to achieve simultaneous recognition of microphone characteristics, which are the most important parameters leading to the distortion of photoacoustic

The aim of this work is to improve the estimation of parameters of solar photovoltaic models. An approach based on lightning attachment procedure optimization, which takes into account the uncertainties of measurements, is proposed. The approach includes three steps: the extraction of the parameters in a conventional manner, the determination of the partial uncertainties of all the parameters, and

All-optical reversible logic gates can play crucial roles in the next generation of all-optical computing systems. In this paper, we will propose and design an all-optical Toffoli gate using photonic crystal-based nonlinear ring resonators. The proposed structure has three input and three output ports. There is a one-by-one mapping between the input and output ports; therefore, the proposed structure

A new two-dimensional analytical model is proposed for the electrical attributes of a gate-all-around heterojunction tunnel field-effect transistor, including the potential distribution, lateral and vertical electric fields, drain current, subthreshold swing, and threshold voltage. The potential distribution in the device is obtained by using the two-dimensional (2-D) Poisson equation, including the

Transition-metal oxide perovskites usually exhibit mixed ionic and electronic conductivity and have been widely investigated as electrode materials for use in solid-oxide fuel cells. Recently, samarium nickelate SmNiO3 was found experimentally to show promising potential for use in proton-conducting fuel cells. To understand the ionic conductivity of SmNiO3, the oxygen and proton diffusion therein

For continued scaling with silicon, the stacked nanosheet field-effect transistor (SNSH-FET) is considered to be a major candidate for sub-7-nm technology. The radiofrequency (RF)/analog performance of a three-channel SNSH-FET is studied herein and benchmarked against a fin-shaped field-effect transistor (FinFET) at 7-nm technology and having the same footprint on the wafer. In the existing SNSH-FET

A new technique called series-connected dynamic node-driven transistor domino logic (SCDNDTDL) is proposed for the design of circuits with high speed and low power consumption in fin-shaped field-effect transistor (FinFET) technology. HSPICE is used to simulate 2-, 4-, 8-, and 16-input domino OR gates in complementary metal–oxide–semiconductor (CMOS) and FinFET technology using the 32-nm Predictive

The influence of incorporating HfO2 as a dielectric at the drain side and a silicon stack at the source side on the electrical performance of a double-gate tunnel field-effect transistor (TFET) is investigated by comparing a conventional TFET structure with four other structures in which the gate dielectric material is either homogeneous or heterogeneous while the insulator on the drain side is either

A simple physics-based three-dimensional (3-D) analytical model for AlInSb/AlSb/InSb double-gate high-electron-mobility transistors (DG-HEMTs) is presented. The model accurately predicts the short-channel effects (SCEs) in the channel region for various device dimensions, viz. channel length and width, by solving the three-dimensional Poisson equation. The effects of the barrier layer (AlInSb) thickness

Grover’s quantum search algorithm is a highly studied quantum algorithm that has potential applications in unstructured data search, achieving quadratic speedup over existing classical search algorithms. In this work, we propose a modified quantum circuit for multi-pattern quantum Grover’s search algorithm. Our proposed modification simplifies the conventional Grover’s algorithm circuit and makes it

We present a two-dimensional (2-D) analytical modeling of the surface potential of a double-gate vertical t-shaped tunnel field-effect transistor (TFET), considering the inherit dual modulation effect in such devices. This effect explains the control of the surface potential by both bias voltages, which are used to calculate the tunneling depletion width at the source and drain junctions. A model of

A numerical framework for DC and RF small-signal simulations of nanowire transistors is presented, which is based on the self-consistent solution of the Poisson, Schrödinger, and Boltzmann transport equations and is stable for the entire range from weak to strong particle scattering. The proposed approach does not suffer from the deficiencies due to the transformation of the Boltzmann transport equation

In partitioning, a circuit is recursively divided into several subcircuits so that each can be efficiently and independently designed with the main objective of reducing the cut-cost. Partitioning is a first step in the very large-scale integration (VLSI) physical design process, and all the other physical design steps such as floorplanning, placement, pin assignment, and routing depend on its outcome

Abstract The end groups of small-molecule acceptors strongly affect their properties and performance. In this study, theoretical analysis is performed to determine the reason why two similar molecules differing in their end group show very different performance in organic solar cells. The 1,1-dicyanomethylene-3-indanone-based small-molecule acceptor (DC-IDT2Tz) shows a higher transition dipole moment

The double-gate tunneling field-effect transistor (DGTFET) is investigated with two channel lengths (50 and 20 nm), along with the effect of the variation of the device design on its overall direct-current (DC) and radiofrequency (RF) performance. The studied design parameters are the drain doping abruptness (or spread) and its shift relative to the gate electrode. Additionally, the gate work function

The memristor was introduced as a nonlinear circuit element in 1971, and systems showing memristor-like properties such as zero-crossing hysteresis loops were described in 1976. In 2008, a thin-film system that behaved like a memristor over some part of its operating region was discovered. Memristors and memristive systems have thus become a hot research area in recent years, making it important to

Copper and copper-compound vapor lasers are most powerful in the visible spectrum with output power over 100 W. They offer unique properties including a laser beam with high coherence and convergence and high average output powers with relatively small dimensions. Recently, these lasers, and in particular the copper bromide (CuBr) laser, have been widely used as radiation sources and vapor brightness

The performance of organic cells based on bulk heterojunctions (BHJs) has improved recently, but further improvements are necessary. In this work, we have carried out a thorough examination using density functional theory (DFT) and time-dependent (TD)-DFT to investigate the structural and optoelectronic properties of pentacene-based organic molecules (PbOMs) as potential donor material for organic

In recent years, investigating organic compounds for Dye Sensitized Solar Cells (DSSCs) applications has received particular attention for its interesting optoelectronics properties. In this article, we have conducted a theoretical study on a series of D–π–A molecules, which have carbazole as a donor (D) and cyanoacrylic acid as acceptor (A) linked by a conjugated bridge. Theoretical calculations were

The structural, electronic, optical, and thermodynamic properties of hydrogenated silicene (silicane) in three stable structures, viz. chair (C), boat (B), and tricycle (T), are studied using first-principles calculations. The band structure and density of states are discussed. The stability is analyzed using binding energy and phonon calculations. Silicane is highly temperature sensitive compared

Two modifications of the molecular structures of Aurantinidin and Betanidin dyes were modeled, and the optical and electrical properties were calculated by using density functional theory (DFT) and time-dependent DFT (TD–DFT). The modification of the structures was done by connecting the units through vinyl groups and using regular electron acceptor and electron donor moieties to the original structures

A two-dimensional (2-D) technology computer-aided design (TCAD)-based simulation study of the back bias in the ultrathin silicon-on-insulator (SOI) tunnel field-effect transistor (TFET) is presented. The transfer characteristics of a conventional TFET called the back-bias TFET (BB-TFET) depend on the back bias and the oxide thickness below the TFET epitaxial layer. The back bias affects the electric

Transition metal oxides (TMOs) as passivating carrier-selective contact layers are investigated for silicon heterojunction solar cells. MoOx as hole-selective layer and TiOx as an electron-selective layer are explored in detail to design a high-efficiency silicon heterojunction solar cell without any specified surface passivation layer. The thickness and optical transparency of the MoOx hole-selective

A circularly polarized semicylindrical patch antenna loaded with unequal slots for use in S-band applications is presented and designed. Circular polarization operation is demonstrated for both planar and semicylindrical structures by embedding four quarter-circular slots with asymmetric radius at the four corners and two symmetric semicircular slots on both side edges. An axial ratio (AR) bandwidth

The role played by ion channel noise and ion shot noise around the threshold conditions for spiking activity in biological membranes is studied by means of a stochastic model based on the Hodgkin–Huxley equations, considering membrane voltage-dependent gating channels for sodium and potassium cations, and leakage channels. Ion channel noise, that is, the noise linked to the random opening and closing

The gravitational search algorithm (GSA) is a novel optimization technique that relies upon the law of motion and law of gravity of masses to describe the interaction between the agents. The GSA has shown outstanding performance but suffers from the drawback of a slow process due to the dependence of the fitness function on the masses of the agents. As a result, after each iteration, the masses get

We present a detailed study on the n-channel single-gate junctionless transistor (JLT) at the \({10}-\hbox{nm}\) node. We investigate the influence of its structural parameters on the on-state current and the off-state leakage current. Furthermore, we show that the use of high-k spacers may not be advantageous in future nanoscale junctionless transistors and confirm this argument by simulation. We

In this paper, statistical analysis of the static impact of charge traps on the drain current of p-type metal–oxide–semiconductor field-effect transistors is presented. The study was carried out by employing a 3-D particle-based Monte Carlo device simulator, which is capable of accounting for the interplay between charge traps and the random dopant fluctuation effect. It was observed that the impact

Three techniques are applied for the resolution of the time-domain electric field integral equation (TD-EFIE) for a thin wire antenna based on the well-known time-domain method of moments. Three temporal bases are used to approximate the unknown temporal variation. The first is derived from Dirac functions, the second from B-spline functions, and the third from Laguerre functions. Piecewise triangular

Slot waveguides based on silicon-on-insulator dielectric material are investigated theoretically for structural optimization with the aim of attaining the maximum light confinement with the minimum mode footprint inside the slot region. The effects of various geometrical parameters on the field confinement factor and effective mode area are examined to determine the performance of dielectric vertical-