A novel optical refractive index sensor is proposed and theoretically investigated by cascading a PANDA and a Mach–Zehnder interferometer (MZI) based on the Vernier effect. The PANDA acts as a filter in this structure. Also, the MZI is a function of the refractive index variation. Therefore, the MZI structure acts as a refractive index sensing element in the proposed structure. Detailed modeling and

A temperature sensor based on photonic crystal structures with two- and three-dimensional geometries is proposed, and its measurement performance is estimated using a machine learning technique. The temperature characteristics of the photonic crystal structures are studied by mathematical modeling. The physics of the structure is investigated based on the effective electrical permittivity of the substrate

We propose a novel deep gate lateral double diffused metal-oxide-semiconductor (LDMOS) field-effect transistor in partial silicon-on-insulator (PSOI) technology for achieving high breakdown voltage and reduced power dissipation. In the proposed device, an N+ well is inserted in the buried oxide under the drain region. By optimizing the N+ well and the lateral distance between the buried oxide and the

The simulation, assessment, and harvesting of maximum energy of the solar photovoltaic (PV) system require accurate and fast parameter estimation for solar cell/module models. No complete information on the PV module parameters is provided in the manufacturer’s datasheets. This leads to a nonlinear PV model with a number of unknown parameters. Recently, a new meta-heuristic algorithm called equilibrium

This paper describes the system performance of mode division multiplexing applications. The mode of amplification involved a ring profile-based multi-mode erbium-doped fiber amplifier with minimum support of 10 vortex spatial modes. The vortex modes are configured and generated by the vortex lens whose input is excited by a spatial laser source. The property of vortex modes can be processed with the

In this paper, we derive closed-form equations for the breakdown voltage of punch-through and non-punch-through insulated-gate bipolar transistors (IGBTs). The derivation is based on computing the electric field in the drift region by invoking the depletion approximation and expressing the ionization coefficient as a function of the electric field using a power law. These approximations allow us to

The quantum-dot cellular automata (QCA) is considered to be one of the ground-breaking nanotechnologies developed over the last two decades. A layered T (LT) logic cell library is constructed herein, and the methodology is extended to generic adder and subtractor module designs. The two proposed algorithms lead to more efficient QCA layout designs for an n-bit ripple carry adder (RCA) and subtractor

An ab initio study using density functional theory (DFT) is carried out to explore the structural, electronic, and optical properties of vanadium gallate (VGaO3) and niobium gallate (NbGaO3). The structural properties of these compounds are determined by using the full-potential linearized augmented plane wave (FP-LAPW) technique as implemented in WIEN2k with a standard functional, i.e., the Perdew–Burke–Ernzerhof

In this research work, we report a new design model of quasi-shaped cladding areas with rotated-hexa-based elliptical shaped core areas in photonic crystal fiber (Q-PCF) for terahertz waves of communication signals. Here, we present a six-layer circular air hole in the quasi-shape of cladding regions with two layers of rotated-hexa-based elliptical shaped air holes in the core regions of the Q-PCF

Zigzag and armchair graphene nanoribbons (ZGNR and AGNR) have been investigated using the density functional theory (DFT) and nonequilibrium Green’s function (NEGF) framework. Based on binding energy calculations, both-edge-F-functionalized ZGNR emerges as the most thermostatically and energetically stable among various ZGNR and AGNR configurations. The band structures and density of states (DOS) reveal

Double-negative metamaterial characteristics are achieved through microstrip technology in a compact dielectric substrate at four different frequency bands of the minimal frequency ratio. The presented metamaterial is examined in two separate configurations of parallel and orthogonal feed. The circuit model of proposed metamaterial for both the cases is developed and projected in this paper. Moreover

This paper presents an analytical investigation of the electrostatic properties of a moderately doped symmetric gate-all-around nanowire MOSFET having InGaAs channel. The model is continuous from depletion to strong inversion regime that circumvents regional approach, thus smoothly capturing the transition of the charge profile in all regions of operation. The evolution of the model is facilitated

Synaptic plasticity is studied herein using a voltage-driven memristor model. The bidirectional weight update technique is demonstrated, and significant synaptic features, including nonlinear and threshold-based learning and long-term potentiation and long-term depression, are emulated. The spike-timing-dependent plasticity (STDP) learning characteristic curve is obtained from exhaustive simulations

Nonequilibrium distribution functions (NDFs) for trap states in the mobility gap under photoillumination and zero bias voltage are derived by a constructed self-consistent drift–diffusion simulator consisting of the Poisson equation and current continuity equations for hydrogenated amorphous silicon (a-Si:H). Regarding the temperature dependence of the NDF, we find that the values of the NDF decrease

In this paper, we simulate the electrical characteristics of the n-type metal-oxide-semiconductor (NMOS) transistor in a 65-nm complementary metal-oxide-semiconductor (CMOS) inverter under the actions of heavy ions with different linear energy transfers (LET). We analyze the influence of incident ions with different LETs on a device using technology computer-aided design (TCAD) software, and aim to

A photonic crystal fiber (O-PCF) with a novel structure consisting of five octagonal-shaped layers of circular air holes in the cladding region and two elliptical air holes in the core region is presented for application in different communication fields for terahertz (THz) wave propagation. The O-PCF fiber is investigated using perfectly matched layers by applying the finite element method. Based

A simulation-based study of an n-type six-dimer-line armchair graphene nanoribbon (6-AGNR) tunnel field-effect transistor with asymmetric reservoir doping density is carried out. Tunnel field-effect transistor (TFET) structures are proposed based on a detailed investigation of the device behavior for different applied voltages, channel lengths, temperatures, insulator thicknesses, dielectric constants

Enhancing the performance of Si field-effect transistors with ultrashort gate length is very challenging because of the increase of the source-to-drain tunneling and other short-channel effects. Doping engineering can affect the tunneling probability by varying the energy band profile and electric field. Full quantum ballistic simulations are performed here to study the use of doping engineering as

Today, the design of antenna arrays is very important in providing effective and efficient wireless communication. The purpose of antenna array synthesis is to obtain a radiation pattern with a low side lobe level (SLL) at a desired half power beam width in far-field. The amplitude and position values of the array elements can be optimized to obtain a radiation pattern with suppressed SLLs. In this

This paper presents a numerical study of highly dispersive optical solitons that maintain a cubic–quintic–septic nonlinear (also know as polynomial) form of the refractive index. The Laplace–Adomian decomposition scheme is applied as a numerical algorithm to put the model into perspective. Both bright and dark soliton solutions are studied in this context. Both surface plots and contour plots of such

The interaction of amphetamine (AM) drug with a zinc oxide (Zn12O12) nanocage was studied based on the density functional theory (DFT) in a B3LYP/LANL2DZ level of theory. The adsorption energy of the AM drug on the Zn12O12 surface was calculated to be about −14.09 kcal/mol, and this value confirmed the physical adsorption of the drug on the Zn12O12 surface. Also, based on the natural bond orbital (NBO)

The quantum ballistic transmission properties of an electrically-doped guanine-nanosheet-based bio-Zener diode are investigated using density functional theory and nonequilibrium Green’s function-based first-principles calculations. The bio-Zener diode is gate-bias modulated, and its various quantum-electronic properties, for example, the V–I characteristic, the transmission spectra, and the device

High-performance sub-10-nm field-effect transistors (FETs) are considered to be a prerequisite for the development of nanoelectronics and modern integrated circuits. Herein, new band-to-band tunneling (BTBT) junctionless (JL) graphene nanoribbon field-effect transistors (GNRFETs) endowed with sub-10-nm gate length are proposed using a quantum transport simulation. The nonequilibrium Green’s function

In this paper, a high-sensitive plasmonic sensor based on metal–insulator–metal waveguide coupled with the interesting metal nanoracetrack defects in a cross cavity is proposed and investigated. The sensing characteristics of the proposed design are analyzed by the means of finite difference time domain method which is embedded in the commercial simulator R-Soft. The positions of transmission peaks

Wave absorbers are considered to be fundamental building blocks for the manipulation of light. Almost all optical systems exploit absorbers to realize some functions. A highly tunable wide-band THz absorber is presented herein. Utilizing a dual-bias scheme with a single graphene layer leads to greater freedom to control the absorption response, while a conventional periodic array of graphene ribbons

This work presents a four-layer absorber based on graphene patterns. Periodic arrays of biased graphene nanodisks and ribbons are exploited, while a graphene sheet top layer enhances the overall absorption. The presented structure is modeled using the circuit model method and simulated to verify its validity and accuracy. A sufficient number of simulations are performed to investigate the robustness

The voltage amplification of a ferroelectric layer was studied for advanced complementary metal–oxide–semiconductor (CMOS) applications. To match the capacitance for negative-capacitance field-effect transistors (NC-FETs), a method of adjusting the MOS capacitance is proposed by optimizing the width (W) and height/depth (H) in two types of ferroelectric gate-stack 2D metal-oxide semiconductor capacitor

The substitutional semiconductor obtained by doping \({\text{In}}_{2} {\text{O}}_{3}\) with aluminum metal has potential applications in high-quality gas sensors and nanoelectronic devices. The structural and electrooptical properties of new \(\left( {{\text{In}}_{1 - x} {\text{Al}}_{x} } \right)_{2} {\text{O}}_{3}\) alloys with compositions corresponding to x = 0, 0.25, 0.75, and 1 are theoretically

We have investigated the structural, electronic, magnetic, elastic and thermoelectric properties of the sp-based half-Heusler LiBaX (X = Si and Ge) alloys using the full-potential linearized augmented plane wave method of density functional theory. Two approaches are employed to approximate the correlation-exchange potential, namely the generalized-gradient approximation and the modified Becke–Johnson

The tunnel field-effect transistor (TFET) is an ambipolar device that conducts current with the channel in both accumulation and inversion modes. Analytical expressions for the channel potential and current in a TFET with an n-doped channel when operating in the accumulation and inversion modes are proposed herein. The potential model is derived by solving the two-dimensional (2D) Poisson equation

The performance and reliability enhancement achieved in a conventional double-gate (DG) junctionless field-effect transistor (JLFET) by introducing a vacuum gate dielectric towards the drain terminal and a high-\(\kappa\) gate dielectric (TiO\(_{2}\)) towards the source terminal is investigated. This arrangement of gate dielectrics enables enhanced gate controllability and offers significant protection

The Numerov process is a solution method applicable to some classes of differential equations, that provides an error term of the fifth order in the grid size with a computational cost comparable to that of the finite-difference scheme. In the original formulation of the method, a uniform grid size is required; the paper shows a procedure for extending its applicability to a non-uniform grid in one

This paper deals with the design and optimization of a triple-junction (TJ) solar cell using indium gallium nitride (InGaN) material. Two tunnel diodes are used to ensure connection between the different subcells. A comprehensive study is performed by means of 2D numerical simulations to locate the best bandgap combination that leads to an optimized current matching. During the simulations, the doping

A new heterodielectric shifted-core-gate nanotube tunneling field-effect transistor (HD-SCG-NT-TFET) is proposed with a higher ON-state current and a better subthreshold swing (SS) compared with the conventional core-gate NT-TFET structure. The charge plasma phenomenon is employed to induce charge carriers inside the channel and source region by applying an appropriate metal workfunction. A brief comparative

The improvement achieved in the reverse recovery characteristics of an SiC superjunction metal–oxide–semiconductor field-effect transistor (MOSFET) by embedding a p-type Schottky contact at the drain terminal and removing the \({N}^{++}\) substrate is presented. The carrier injection into the drain terminal during the reverse recovery phase is drastically reduced in the proposed device due to the Schottky

In this research article, a grounded resistorless meminductor emulator is proposed. The proposed emulator uses one voltage differencing transconductance amplifier (VDTA) and one operational transconductance amplifier (OTA) with corresponding grounded capacitances. It can be operated in both decremental and incremental configurations. The comparison of the proposed emulator with available literature

The impact of variations in the donor and acceptor interface trap distributions on the fluctuation characteristics of 7-nm-node Si gate-all around n-nanowire FET (n-NWFETs) is analyzed in a hardware-calibrated quantum-corrected three-dimensional (3D) drift–diffusion (DD) numerical simulation framework. Shifting the energy position of the peak in the acceptor trap density distribution (Dit) induces

One of the recent challenges that arise in the study of small antennas is the bio-electromagnetic analysis of implantable and wearable devices for e-health applications. In this paper, a new on-body scenario for safely limits is discussed. An analysis of the electromagnetic interaction between a model of human body tissue and a wearable thin on-body antenna operating at 5 GHz frequency, is made. Based

pH sensors are monitoring devices with wide applications in biology, chemistry, medicine, and agriculture. To enhance their sensitivity and long-term stability, efficient study of such devices becomes imperative but is impossible without the aid of accurate analytical models. A new analytical model for the pH sensing characteristics of AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is presented

A photonic-crystal fiber (PCF) based on the surface plasmon resonance (SPR) effect with low confinement loss and high sensitivity response is designed and its optical properties analyzed when varying different parameters. The SPR-based PCF design is analyzed to enable control over its light propagation and evanescent properties. In this investigation, gold (Au) is used as a plasmonic material to generate

A novel integrated design and simulation approach is applied to analyze the performance of a metal–oxide–semiconductor field-effect transistor (MOSFET)-based microelectromechanical systems (MEMS) pressure sensor circuit while varying circuit and CMOS parameters, viz. the supply voltage and threshold voltage (Vt), respectively. For effective mechanical pressure sensing, a sensor MOSFET is integrated

The characteristic of the microelectromechanical systems (MEMS) structures can be determined by using static, modal and harmonic analyses implemented with finite element method (FEM) software packages. In the current study, two different algorithms for the open-source Elmer FEM are developed to analyze not only the biased modal analysis but also harmonic response. The proposed algorithms are implemented

In the nanoscale regime, carbon nanotubes (CNTs) are being considered as a future alternative interconnect material for traditional copper (Cu) wires in integrated circuit technology. The advances in device scaling and the continuous increase of clock frequencies in very large-scale integration technology have resulted in signal integrity (SI) issues. The reduction of such SI issues in coupled multiwalled

Motivated by the exploration for high-performable sensitizers, in this work six novel organic donor–acceptor–π–spacer–acceptor (D–A–π–A) dyes were designed by inserting auxiliary electron acceptors into the C220 dye, and their photovoltaic performances were predicted by density functional theory (DFT) and time-dependent DFT (TD-DFT) calculations coupled with the charge hopping model. Results revealed

An ultra-energy-efficient interconnect structure based on multilayer graphene nanoribbon (MLGNR) interconnects for deep-nanometer technologies is proposed herein. First, a low-swing interconnect based on MLGNRs and high-performance interface circuits using carbon nanotube field-effect transistors (CNTFETs) is proposed. Then, an ultra-energy-efficient interconnect structure is obtained by actively shielding

The main objective of this work is to study the transient Joule heating effect in a conductive-bridge random-access memory (CBRAM) using the single-phase-lag heat conduction model to describe the effects of the metallic conductive filament (CF) radius and the reset voltage on the thermal and electric field. The results reveal that the CF geometry plays an important role in the transient Joule heating

Workfunction variation (WFV) in a high-k/titanium metal gate stack vertical tunnel field-effect transistor (FET) with a delta-doped layer in the germanium source is explored using technology computer-aided design simulations. The field-induced quantum confinement effect is also evaluated for the vertical tunnel FET. The impact of the gate area on various electrical parameters such as the ON-current

In this study, we propose a miniature triple band PIFA antenna (planar inverted-F antenna) composed of uniform semi-patches for LTE2600/WLAN/WIMAX/HIPERLAN-2 applications. The binary genetic algorithm determines the shape of the antenna’s radiating plate to achieve multiband operation with good performance. The simulated results reveal that the proposed antenna has attained three bandwidths (\(S_{11}

In this work, a kind of magnetic photonic crystal fiber (MPCF) design based on yttrium iron garnet (YIG) structure filled with magnetic fluid (MF) is presented. In order to improve the magneto-optical (MO) properties of isolator devices, a numerical study has been developed to investigate the non-reciprocal TE-TM mode conversion. This technique consists in producing, under the influence of a magnetic

Dark current and responsivity are two important parameters of quantum well infrared photodetectors (QWIPs). An optimization approach is applied herein to achieve low dark current along with high responsivity for a GeSn/SiGeSn QWIP. The dark current is reduced by varying different physical parameters of well and barrier, operating temperature and bias voltage of the QWIP. To optimize the QWIP, the detectivity

A periodic statistical potential applied in each layer of bilayer graphene can change it to a superlattice, enabling its application as a flexible light absorber. In this work, the effect of structural parameters on the optical absorption and bandgap of such a bilayer graphene superlattice is studied theoretically in detail. The bilayer graphene superlattice consists of two single layers of graphene

An all-optical digital-to-analog converter (DAC) using quantum dot semiconductor optical amplifiers (QDSOAs) is proposed and analyzed. The device operates at low optical power (~ 0.5 mW) at a speed of 1 Tbps. The resolution of the DAC is four bits, and the corresponding step size is 1.068 mW (compared with the ideal value of 1 mW). The dynamic range is found to be 11.47 dB (versus the ideal value of

Deoxyribonucleic acid (DNA) sequencing provides the opportunity to advance prosperity by helping individuals or developing precision medications. The potential application of a zigzag (10, 0) AlN nanotube (AlNNT) as a DNA sequencer is studied herein by using B3LYP-gCP-D3 density functional model chemistry. The energy released after adsorption of DNA nucleobases by the AlNNT lies in the following order:

The effect of zinc and oxygen vacancy defects on the electronic transport properties of Ag(100)–ZnO(100)–Pt(100) sandwich structures is studied using density functional theory in combination with the nonequilibrium Green’s functional formalism. Defect-free systems show clear current rectification due to voltage dependent charge localization in the system as revealed in our transmission eigenstates

A unique procedure to model and simulate a 36-cell-50 W solar panel using analytical methods has been developed. The generalized expression of solar cell equivalent circuit was validated and implemented, making no influential assumptions, under Simulink/MATLAB R2020a environment. The approach is based on extracting all the needed parameters by exploiting the available parameters from the data sheets

This study entails a theoretical investigation of the effect of the hole transport layer (HTL) and electron transport layer (ETL) materials on a lead-free perovskite solar cell based on methylammonium tin iodide (CH3NH3SnI3). The simulations of the solar cells were conducted with the aid of the one-dimensional solar cell capacitance simulator, SCAPS-1D. The initial primary cell with the following architectural

In this paper, a compact all-optical five-channel demultiplexer (DEMUX) using 2D photonic crystal hexagonal cavities is proposed. The proposed DEMUX comprises bus/drop waveguides, photonic crystal waveguides containing four consecutive 120° bends, two power splitters, and hexagonal resonant cavities. By adjusting the radius and refractive index of the inner/coupling rods, position, and radius of the

Currently, the GaN-on-silicon high electron mobility transistor (HEMT) is a promising candidate to replace the Si Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for high power electronics circuits. However, self-heating is still a challenging issue to be addressed, especially for high-current applications. In this paper, a GaN-on-Si HEMT with a diamond (Dia) heat spreader is proposed to

In this paper, a charge-based analytical model is proposed for double-gate MOSFETs working in the quasi-ballistic regime. The model includes both Lundstrom backscattering theory and conventional drift–diffusion theory. Both the theories are used to model the charge density along channel length, which are used to solve Poisson's equation to get the variation of the channel potential. To compute the

A micro-ring space-time control circuit is proposed for micro-supercapacitor application. The center micro-ring circuit consists of sandwiched titanium dioxide (TiO2) thin film. The input light fed into the circuit via the input port is of 1.55 µm wavelength. The input space source is multiplexed with time at the add port to form the space-time function. A whispering-gallery mode is formed using suitable