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Accurate modeling and simulation of solar photovoltaic panels with simulink-MATLAB J. Comput. Electron. (IF 1.532) Pub Date : 2021-03-03 Nacer Badi; Syed Khasim; Saleh Ahmad Al-Ghamdi; Ayshah S. Alatawi; Alex Ignatiev
A unique procedure to model and simulate a 36-cell-50 W solar panel using analytical methods has been developed. The generalized expression of solar cell equivalent circuit was validated and implemented, making no influential assumptions, under Simulink/MATLAB R2020a environment. The approach is based on extracting all the needed parameters by exploiting the available parameters from the data sheets
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A theoretical investigation of the effect of the hole and electron transport materials on the performance of a lead-free perovskite solar cell based on CH 3 NH 3 SnI 3 J. Comput. Electron. (IF 1.532) Pub Date : 2021-03-03 Nicholas Rono; Abdelkrim E. Merad; Joshua K. Kibet; Bice S. Martincigh; Vincent O. Nyamori
This study entails a theoretical investigation of the effect of the hole transport layer (HTL) and electron transport layer (ETL) materials on a lead-free perovskite solar cell based on methylammonium tin iodide (CH3NH3SnI3). The simulations of the solar cells were conducted with the aid of the one-dimensional solar cell capacitance simulator, SCAPS-1D. The initial primary cell with the following architectural
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Optimization and realization all-optical compact five-channel demultiplexer using 2D photonic crystal based hexagonal cavities J. Comput. Electron. (IF 1.532) Pub Date : 2021-03-02 Masoud Mohammadi; Mahmood Seifouri; Saeed Olyaee; Mohsen Karamirad
In this paper, a compact all-optical five-channel demultiplexer (DEMUX) using 2D photonic crystal hexagonal cavities is proposed. The proposed DEMUX comprises bus/drop waveguides, photonic crystal waveguides containing four consecutive 120° bends, two power splitters, and hexagonal resonant cavities. By adjusting the radius and refractive index of the inner/coupling rods, position, and radius of the
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GaN HEMT on Si substrate with diamond heat spreader for high power applications J. Comput. Electron. (IF 1.532) Pub Date : 2021-02-25 L. Arivazhagan, Anwar Jarndal, D. Nirmal
Currently, the GaN-on-silicon high electron mobility transistor (HEMT) is a promising candidate to replace the Si Metal Oxide Semiconductor Field Effect Transistor (MOSFET) for high power electronics circuits. However, self-heating is still a challenging issue to be addressed, especially for high-current applications. In this paper, a GaN-on-Si HEMT with a diamond (Dia) heat spreader is proposed to
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Analytical model for quasi-ballistic transport in MOSFET including carrier backscattering J. Comput. Electron. (IF 1.532) Pub Date : 2021-02-24 Sandeep Semwal, Sonal Agrawal, Anurag Srivastava, Gaurav Kaushal
In this paper, a charge-based analytical model is proposed for double-gate MOSFETs working in the quasi-ballistic regime. The model includes both Lundstrom backscattering theory and conventional drift–diffusion theory. Both the theories are used to model the charge density along channel length, which are used to solve Poisson's equation to get the variation of the channel potential. To compute the
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Micro-supercapacitor characteristics using a micro-ring space-time control circuit J. Comput. Electron. (IF 1.532) Pub Date : 2021-02-24 A. E. Arumona, A. Garhwal, S. Punthawanunt, P. Youplao, K. Ray, P. Yupapin
A micro-ring space-time control circuit is proposed for micro-supercapacitor application. The center micro-ring circuit consists of sandwiched titanium dioxide (TiO2) thin film. The input light fed into the circuit via the input port is of 1.55 µm wavelength. The input space source is multiplexed with time at the add port to form the space-time function. A whispering-gallery mode is formed using suitable
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Design and analysis of a MEMS pressure sensor with a bossed membrane and ancillary bi-functional frog arm structure for low pressure measurement J. Comput. Electron. (IF 1.532) Pub Date : 2021-02-24 Rohan Sahay, Sumit Kumar Jindal
This work presents a micro-electromechanical system based novel piezoresistive pressure sensor with frog arm structure for low pressure measurements up to one psi. The structure has been proposed with the objective of alleviating the trade-off between sensitivity and linearity of the sensor output. While a common feature of most of the previous works is deployment of two or more different methods to
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First-principles study of two-dimensional puckered and buckled honeycomb-like carbon sulfur systems J. Comput. Electron. (IF 1.532) Pub Date : 2021-02-21 Qiang Zhang, Fuchun Zhang
The stability and geometrical, mechanical, and electronic properties of monolayer carbon sulfur (CS) systems with honeycomb-like structure are studied by using first-principles calculations based on density functional theory. The results demonstrate that the honeycomb-like CS systems with two types of structure (buckled and puckered) are quite stable. It is found that such puckered and buckled CS nanosheets
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A perfect electrically tunable graphene-based metamaterial absorber J. Comput. Electron. (IF 1.532) Pub Date : 2021-02-18 A. Beheshti Asl, D. Pourkhalil, A. Rostami, H. Mirtaghioglu
In this paper, a metamaterial absorber based on graphene is proposed, designed and simulated numerically using multilayer structures. Before describing our work, the performance response of a three-layer structure is studied concerning one cylinder as a unit cell. Then, by varying the chemical potential of graphene (Fermi level of graphene) by applying external potential, the center frequency of this
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The design of a new heterogate superjunction insulated-gate bipolar transistor J. Comput. Electron. (IF 1.532) Pub Date : 2021-02-17 Namrata Gupta, Alok Naugarhiya
A new heteromaterial planar-gate superjunction insulated-gate bipolar transistor (HG IGBT) is proposed herein. It consists of stepped gate oxides with thickness of 50 nm, 100 nm, and 150 nm. The gate of the proposed structure is constructed using two materials with different workfunction in a triple-segment polygate configuration, connected via metal on the top. The first and last segment consist of
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Effect of chemical modification on electronic transport properties of carbyne J. Comput. Electron. (IF 1.532) Pub Date : 2021-02-13 G. R. Berdiyorov, U. Khalilov, H. Hamoudi, Erik C. Neyts
Using density functional theory in combination with the Green’s functional formalism, we study the effect of surface functionalization on the electronic transport properties of 1D carbon allotrope—carbyne. We found that both hydrogenation and fluorination result in structural changes and semiconducting to metallic transition. Consequently, the current in the functionalization systems increases significantly
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Nonlinear optimal control and synchronization for chaotic electronic circuits J. Comput. Electron. (IF 1.532) Pub Date : 2021-02-12 G. Rigatos, M. Abbaszadeh
To achieve control and synchronization of chaotic electronic circuits, a nonlinear optimal (H-infinity) control method is developed and is tested on Chua’s circuit. Although this electronic circuit is deterministic, for specific values of its parameters its phase diagrams may change in a random-like manner, thus exhibiting a chaotic behavior. In the article’s control approach, an approximate linearization
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Improvement of terahertz photoconductive antennas array using crossfingers structure J. Comput. Electron. (IF 1.532) Pub Date : 2021-02-07 Farzad Moradiannejad
The purpose of this research is to improve terahertz photoconductive antenna arrays to enhance their output power. The improved arrays were designed based on crossfingers structure as a high power terahertz generator. The finite difference time domain method was used for modelling and simulating of the generator. The characteristics of the improved array and its emphasis points and key parameters were
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Monte Carlo simulations of electron transport in 4H-SiC using the DFT-calculated density of states J. Comput. Electron. (IF 1.532) Pub Date : 2021-02-06 Janusz Wozny, Andrii Kovalchuk, Zbigniew Lisik, Jacek Podgorski, Piotr Bugalski, Andrzej Kubiak, Łukasz Ruta
We carry out Monte Carlo simulations of electron transport in 4H-silicon carbide (4H-SiC) based on the numerically calculated density of states (DOS) to obtain the electron mobility at low electric fields. From the results, it can be concluded that a correct calculation of the DOS requires a very dense wavevector k-mesh when low electron kinetic energies are considered. The crucial issue is the numerical
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First-principles calculations of the electronic and optical properties of $$\text {WSe}_2/\text {Cd}_{0.9}\text {Zn}_{0.1}\text {Te}$$ WSe 2 / Cd 0.9 Zn 0.1 Te van der Waals heterostructure J. Comput. Electron. (IF 1.532) Pub Date : 2021-02-04 Anurag Chauhan, Ankit Maahich, Jatin Pal
Electronic and optical properties of monolayer tungsten selenide \((\text {WSe}_2)\) and cadmium zinc telluride \((\text {Cd}_{0.9}\text {Zn}_{0.1}\text {Te})\) heterostructure with VdW, i.e., Van der Waals attractions between two layers, are explored using first-principles calculations. From the results, it is discovered that the proposed heterostructure of \(\text {WSe}_2/\text {Cd}_{0.9}\text {Zn}_{0
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Improvement of RF MEMS devices by spring constant scaling laws J. Comput. Electron. (IF 1.532) Pub Date : 2021-02-02 Deepak Bansal, Prem Kumar, Amit Kumar
The technology for radio frequency micro-electro-mechanical system (RF MEMS) is well established. In the next phase of miniaturization, RF MEMS transforming into RF nano-electro-mechanical system (NEMS) requires scaling laws. For MEMS devices, vertical scaling laws are available in the literature. However, existing scaling laws are isotropic and not valid for the majority of the MEMS devices. Like
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A multiple-event propagation model in near-threshold combinational circuits using neural networks J. Comput. Electron. (IF 1.532) Pub Date : 2021-02-01 Ali Hajian, Saeed Safari
Near-threshold computing (NTC) is a promising technique to reduce the power consumption of very large-scale integration (VLSI) designs. The continuous reductions in the supply voltage present reliability challenges for modern complementary metal–oxide–semiconductor (CMOS) logic due to the occurrence of soft errors from single-event transients (SETs) and multiple-event transients (METs). A fast yet
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Random forests for statistical modeling of experimental data for CuBr vapor lasers used as brightness amplifiers J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-28 Atanas Valev Ivanov, Dimitar Vaskov Fidanov, Snezhana Georgieva Gocheva-Ilieva
This study demonstrates the high capabilities of data mining and the random forest (RF) machine learning technique for processing experimental data in the field of laser equipment and technology and extracting significant information from these. The subject of study is the copper bromide vapor laser, used as a brightness amplifier and as an active medium in active optical systems actively developed
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Characteristics of HTS inverted circular patches on anisotropic substrates J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-27 Sami Bedra, Siham Benkouda, Randa Bedra, Tarek Fortaki
In this study, an efficient full-wave method is developed for characterizing the resonant frequencies, bandwidths, and quality factors of an inverted circular superconducting patch antenna. Our technique is based on the Galerkin procedure in the Hankel transform domain (HTD) combined with the complex resistive boundary conditions. With the use of suitable Green’s functions in the HTD, the analysis
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DC performance analysis of III–V/Si heterostructure double gate triple material PiN tunneling graphene nanoribbon FET circuits with quantum mechanical effects J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-25 Ritam Dutta, T. D. Subash, Nitai Paitya
In this article, the electrical behavior of laterally grown novel short-channel III–V/Si heterostructure double gate triple material PiN tunneling graphene nanoribbon field effect transistor (DG-TM-PiN-TGNFET) has been studied based on their quantum mechanical effect (QME). Firstly, by varying the device process parameters of the novel TFET structure, the DC parameter responses viz. threshold voltage
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A computational approach for investigating Coulomb interaction using Wigner–Poisson coupling J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-21 Majid Benam, Mauro Ballicchia, Josef Weinbub, Siegfried Selberherr, Mihail Nedjalkov
Entangled quantum particles, in which operating on one particle instantaneously influences the state of the entangled particle, are attractive options for carrying quantum information at the nanoscale. However, fully-describing entanglement in traditional time-dependent quantum transport simulation approaches requires significant computational effort, bordering on being prohibitive. Considering electrons
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Elementary reflected code converter using a silicon nitride-based microring resonator J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-21 Ankur Saharia, Nitesh Mudgal, Ravi Kumar Maddila, Ghanshyam Singh
This article presents a simple and unique design for the generation of an all-optical reflected code or Gray code converter using an optical microring resonator as a basic building block. The Si3N4 -based microring resonator is modulated using an optical pump signal. The paper includes a combination of microring resonators for the generation of a reflected code encoder logic circuit. The designs are
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Compact modeling of metal-oxide TFTs based on artificial neural network and improved particle swarm optimization J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-20 Wanling Deng, Wanqin Zhang, You Peng, Weijing Wu, Junkai Huang, Zhi Luo
The application of artificial neural network (ANN) can give a very accurate and fast model for semiconductor devices used in circuit simulations. In this paper, we have applied multi-layer perceptron (MLP) neural network based on limited memory Broyden–Fletcher–Goldfarb–Shanno (L-BFGS) method to model the flexible metal-oxide thin-film transistors (TFTs). An improved particle swarm optimization (PSO)
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The development of a neural network model for the structural improvement of perovskite solar cells using an evolutionary particle swarm optimization algorithm J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-19 Nasim Ghalambaz, Jabbar Ganji, Pejman Shabani
The revolution represented by third-generation photovoltaic devices relied on the discovery of various hybrid organic–inorganic perovskite materials to convert solar into electrical energy. One of the advantages of such cells is their low cost due to the raw materials and cheap production methods used. Nevertheless, these cells face several challenges, such as inadequate stability and the hysteresis
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Spintronic devices: a promising alternative to CMOS devices J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-19 Prashanth Barla, Vinod Kumar Joshi, Somashekara Bhat
The field of spintronics has attracted tremendous attention recently owing to its ability to offer a solution for the present-day problem of increased power dissipation in electronic circuits while scaling down the technology. Spintronic-based structures utilize electron’s spin degree of freedom, which makes it unique with zero standby leakage, low power consumption, infinite endurance, a good read
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Design and analysis of porous core photonic crystal fiber based ethylene glycol sensor operated at infrared wavelengths J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-19 Abinash Panda, Puspa Devi Pukhrambam
A novel porous core photonic crystal fiber (PCF) sensor is reported for label-free detection of different concentrations of ethylene glycol present in aqueous solution, over a wavelength range from 1 to 2 μm. Both core and cladding are designed with elliptical air holes, which are arranged in a hexagonal structure with TOPAS as the background material. Various geometrical parameters are judiciously
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Waveguide divider design based on null of electric field J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-19 Leonardo Zappelli
Nowadays, the design of dividers is based on electromagnetic software that optimizes some geometric parameters to obtain the required performance. The choice of the geometry of the discontinuities contained in the divider and of the optimization initial point is quite critical to satisfy the divider requirements. In the last years, it is quite rare to find in the literature a theoretical approach helping
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The spin-polarized dwell time in a parallel double δ-magnetic-barrier nanostructure J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-19 Sai-Yan Chen, Gui-Lian Zhang, Xue-Li Cao, Fang-Fang Peng
The dwell time of electrons in a parallel double δ-magnetic-barrier (MB) nanostructure constructed by patterning an asymmetric ferromagnetic stripe on both the top and bottom of an InAs/AlxIn1−xAs heterostructure is calculated. Because the electron spins interact with the structural magnetic fields, the dwell time depends on the electron spins. Moreover, both the magnitude and sign of the spin-polarized
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Numerical modeling of highly sensitive resonant detection of THz radiation using a multichannel dispersive plasmonic HEMT J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-19 F. Daneshmandian, A. Abdipour, A. N. Askarpour
The resonant detection of terahertz radiation using a dispersive AlN/GaN multichannel high-electron-mobility transistor (HEMT) is analyzed and modeled in this paper. The proposed full-wave model is based on the concurrent solution of the complete hydrodynamic model (CHM) and Maxwell’s equations. The CHM is derived from the first three moments of the Boltzmann transport equation (BTE). Considering the
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Differential evolution with dynamic control factors for parameter estimation of photovoltaic models J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-09 Shubhranshu Mohan Parida, Pravat Kumar Rout
Parameter estimation of photovoltaic (PV) models is an essential component in the design of a PV system with enhanced performance. Although many reliable solutions have been proposed by various authors in recent years, the estimation of PV model parameters is still an emerging area and remains an important focus. The estimation problem is formulated as a single objective function to be minimized based
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DFT calculations on ZnO 1−x compounds for optoelectronic applications J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-07 W. Ouerghui, M. S. Alkhalifah, H. Ben Abdallah
The \({\text{ZnO}}_{{1 - {\text{x}}}}\) compounds were studied theoretically using the full-potential linearized augmented plane wave (FP-LAPW) method in the modified Becke–Johnson (mBJ) technique. The TB-mBJ scheme yields accurate description of the ground state properties better than PBE-GGA approximation. The site preference and the relative stability of the defects in the \({\text{ZnO}}_{{1 - {\text{x}}}}\)
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Characteristic analysis of a capacitive pressure-sensitive structure with linkage film J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-04 Rongyan Chuai, Bing Zhang, Siping Hao, Yuxin Yang, He Zhang
In this paper, a capacitive pressure-sensitive structure with linkage film is proposed to expand the linear response range and linearity of the touch mode capacitive pressure-sensitive structure. In its construct, the top and bottom electrode plates are both sensitive to pressure and movable, thereby adjusting the way of contact and improving the performance. Through the simulation with the finite-elements
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The effect of the stacking arrangement on the device behavior of bilayer MoS 2 FETs J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-03 Arnab Mukhopadhyay, Sayan Kanungo, Hafizur Rahaman
The effect of three different interlayer stacking arrangements of bilayer (BL) molybdenum disulfide (MoS2) channel material on the device behavior of p- and n-metal–oxide–semiconductor field-effect transistors (MOSFETs) is extensively investigated using first-principles calculation based on density functional theory, emphasizing electronic properties such as the eigenstates, effective mass, band structure
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Design strategy and simulation of single-gate SET for novel SETMOS hybridization J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-03 Raj Shah, Rutu Parekh, Rasika Dhavse
This paper presents a design methodology for a single-gate single-electron transistor (SG-SET) for room temperature operation of SET and hybrid SETMOS circuits. Initially, the SET electrostatics is analytically modeled using a free-energy equation. Tunneling probability is determined by modifying the Mahapatra–Ionescu–Banerjee model. The SET is designed systematically so as to achieve process and supply
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Monte Carlo analysis of phosphorene nanotransistors J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-03 Gautam Gaddemane, Maarten L. Van de Put, William G. Vandenberghe, Edward Chen, Massimo V. Fischetti
Experimental studies on two-dimensional (2D) materials are still in the early stages, and most of the theoretical studies performed to screen these materials are limited to the room-temperature carrier mobility in the free-standing 2D layers. With the dimensions of devices moving toward nanometer-scale lengths, the room-temperature carrier mobility—an equilibrium concept—may not be the main quantity
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A design for an ultrafast all-optical full subtractor based on two-dimensional photonic crystals J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-03 J. Abhishek, Prabu Krishnan, S. Robinson
A novel passive all-optical full subtractor device is realized using a two-dimensional (2-D) photonic crystal. The proposed structure is realized using the concept of beam interference in a sequence of T- and Y-shaped line-defective waveguide structures made of a linear material such as silicon with air as the background medium. The major advantage of this design approach is the avoidance of nonlinear
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An all-optical ultracompact microring-resonator-based optical switch J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-03 Mayur Kumar Chhipa, B. T. P. Madhav, B. Suthar
A two-dimensional (2D) photonic crystal with a square lattice structure is studied for the title device. The proposed device is designed with a simple structure using a circular ring resonator between two linear waveguides. Its optical switching action is based on the principle of the shift in the resonant wavelength with the refractive index for the whole structure. The refractive index of the material
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The effects of mutual coupling and polarization on the performance of steered-beam adaptive arrays J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-03 Amin H. Al Ka’bi
The polarization of the electromagnetic waves impinging on adaptive antenna arrays has a significant impact on their performance. The effects of desired and undesired polarized signals and mutual coupling on the performance of adaptive antenna arrays with an electronically steerable beam are studied based on the ratio of the output signal to the interference plus noise. The performance of adaptive
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Analyzing the effect of dynamic properties of materials and operating medium on sensor parameters to increase the performance of diaphragm-based static/dynamic pressure sensors J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-02 Timuçin Emre Tabaru, Şekip Esat Hayber
In the design of a high-performance diaphragm-based static/dynamic pressure sensor (DB-S/DPS), researchers have mostly carried out studies on static deflection and frequency analysis without including diaphragm vibration damping and the effect of the operating medium (OM). However, diaphragms and OM usually contain dynamic processes where vibration damping occurs with constantly changing frequency
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Plasmonic all-optical metal–insulator–metal switches based on silver nano-rods, comprehensive theoretical analysis and design guidelines J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-02 Shiva Khani, Mohammad Danaie, Pejman Rezaei
In this paper, all-optical plasmonic switches are proposed and analyzed. These structures consist of a rectangular resonator filled with a Kerr-type material (AuSiO2) which is coupled to isolated metal–insulator–metal plasmonic waveguides. The resonators contain periodic arrays of nano-rods with rectangular and triangular patterns. The horizontal and vertical waveguides are used for data and control
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Comparison of transport of edge states in 2D hexagonal lattice metallic, semiconducting and topological insulator nanoribbons J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-02 Tanvir Ahmed Masum, Beig Rajibul Hasan, Nishat Mahzabin Helaly, Anowarul Azim, Mahbub Alam
This study investigates the differences in electron transport properties between metallic, semiconducting and topological insulator nanoribbons (NRs). Using non-equilibrium Green’s function (NEGF) formalism, we have considered transport of edge states in four different scenarios. Metallic NRs show Klein tunneling in the presence of barrier. Topological insulator NRs show Klein tunneling in the presence
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Maximum theoretical electron mobility in n -type Ge 1−x Sn x due to minimum doping requirement set by intrinsic carrier density J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-02 Shyamal Mukhopadhyay, Bratati Mukhopadhyay, Gopa Sen, P. K. Basu
The amount of doping to make a semiconductor extrinsic depends on the intrinsic carrier density at a particular temperature. The impurity scattering in the presence of doping determines the maximum mobility exhibited by the semiconductor. In the present work, we estimate the values of intrinsic carrier density of the alloy Ge1−xSnx for 0 < x < 0.2 at and around 300 K. Since the alloy exhibits a direct-gap
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Impacts of core gate thickness and Ge content variation on the performance of Si 1−x Ge x source/drain Si–nanotube JLFET J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-02 Anchal Thakur, Rohit Dhiman
In this paper, we investigate the impacts of variation in the core gate thickness and germanium content on the performance of a Si1−xGex source/drain Si-nanotube junctionless field-effect transistor. A SiGe source/drain structure is combined with a core gate inside the nanotube to address and suppress the stringent issue of short-channel effects (SCEs). The effect of gate length, bias voltages, and
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A new method for reversible circuit synthesis using a Simulated Annealing algorithm and don’t-cares J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-02 Seyed Mansour Shahidi, Shahram Etemadi Borujeni
The synthesis of reversible circuits is a challenge on which many studies have been conducted. Different algorithms attempt to propose a more optimal implementation for each description of a reversible circuit, using reversible gates. In this paper, an algorithm is proposed which, by a heuristic method using a Simulated Annealing algorithm, tries to find a near-optimal circuit to the given truth table
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Design and implementation of reversible logic gates using silicene-based p – n junction logic devices J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-02 Inderdeep Singh Bhatia, Deep Kamal Kaur Randhawa
Advancements in adiabatic quantum computing have enabled a rapid development in thermodynamically reversible logic circuits, which can reduce energy wastage to almost negligible levels. Various reversible logic gates using silicene-based multiplexer logic devices (SMLDs) are designed and demonstrated herein using Verilog-A, then validated by SPICE circuit simulations. The results confirm that the various
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The design of a reconfigurable all-optical logic device based on cross-phase modulation in a highly nonlinear fiber J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-02 Lovkesh, Vishal Sharma, Surinder Singh
A simple reconfigurable ultrahigh-speed optical device which can be configured to optical NOT, AND, or XOR logic operation via slight variations in the input signals applied to two identical parallel highly nonlinear fibers (HNLFs) is described. The cross-phase modulation (XPM) in the HNLF and phase shifter are used in the design to realize a reconfigurable all-optical logic gate operating at 120 Gb/s
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Gate stacked dual-gate MISHEMT with 39 THz·V Johnson’s figure of merit for V-band applications J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-02 Preeti Singh, Vandana Kumari, Manoj Saxena, Mridula Gupta
In this investigation, extensive simulations were performed for an AlGaN/GaN Dual-Gate MISHEMT configuration using ATLAS TCAD to optimize the device design for high power switching applications. We conducted a simulation study for the breakdown characteristics of a Dual-Gate AlGaN/GaN (DG)-MISHEMT with different gate lengths as explained in this paper. The optimized device with 0.25 µm gate length
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A technique to enhance the bandwidth in terahertz reflectarrays J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-02 H. Razmjoo, H. Abiri, A. Yahaghi
Two factors affecting the bandwidth of a reflectarray, the element phase error and the non-constant path delay phase error, have been investigated. A new solution is proposed to reduce the effect of the second factor. Using this method, without adding any particular complexity to the structure, the gain bandwidth of an array rises from 17 to 24%. This array is designed at the center frequency of 1
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Monolayer transition-metal dichalcogenides with polyethyleneimine adsorption J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-02 Vo Khuong Dien, Ong Kim Le, Viorel Chihaia, My-Phuong Pham-Ho, Do Ngoc Son
Monolayer transition-metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te) have attracted much attention for use in electronic and optical applications. Due to their sensitivity to gases, the surface of these materials has been protected by coating with polymers such as polyethyleneimine (PEI). However, the effects of such coating layers on the electronic and optical properties of MX2 are not well understood
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Numerically efficient density-matrix technique for modeling electronic transport in mid-infrared quantum cascade lasers J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-01 S. Soleimanikahnoj, O. Jonasson, F. Karimi, I. Knezevic
We present a numerically efficient density-matrix model applicable to mid-infrared quantum cascade lasers. The model is based on a Markovian master equation for the density matrix that includes in-plane dynamics, preserves positivity of the density matrix and does not rely on phenomenologically introduced dephasing times. Nonparabolicity in the band structure is accounted for with a three-band \({\bf
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Modeling of a compressively strained quantum well laser based on In x Ga 1−x Sb/GaSb and emitting at 2 μm J. Comput. Electron. (IF 1.532) Pub Date : 2021-01-01 S. Dehimi, L. Dehimi, B. Mebarki, F. Pezzimenti
This work deals with the modeling and simulation of quantum well lasers based on a heterostructure formed by indium gallium antimonide (InGaSb) and gallium antimonide (GaSb). The objective is to study the feasibility of a laser operating continuously in the near infrared for applications in the detection of polluting gases. Important device parameters such as the optical gain and threshold current
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Retraction Note to: An analytical model for the effects of the variation of ferroelectric material parameters on the minimum subthreshold swing of NC-FETs J. Comput. Electron. (IF 1.532) Pub Date : 2020-12-31 Raheela Rasool, Najeeb-ud-Din, G. M. Rather
This article has been retracted. Please see the Retraction Notice for more detail: https://doi.org/10.1007/s10825-020-01640-0.
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Terahertz rectangular waveguides with inserted graphene films biased by light and their quasi-linear electromagnetic modeling J. Comput. Electron. (IF 1.532) Pub Date : 2020-12-05 Guennadi A. Kouzaev
Novel rectangular waveguides with graphene inserts biased by light are proposed herein. The graphene films short the conductor plates of waveguides and support the localized transverse-electric modes. Their electric fields are parallel to the wide walls of these waveguides, and the eigenmodes have decreased conductor loss. The designs do not involve the conductor and graphene strips with their sharp
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Computational study of a B 36 borophene as an electronic sensor for the anti-cancer drug cisplatinum J. Comput. Electron. (IF 1.532) Pub Date : 2020-11-09 Esmail Vessally; Seyed Amrollah Javarsineh; Ahmadreza Bekhradnia; Akram Hosseinian; Sheida Ahmadi
The sensitivity and reactivity of a B36 borophene were inspected with regard to the drub cisplatinum, in the gas phase and in aqueous solution, applying density functional theory calculations. In the gas phase, the adsorption energy (Ead) was predicted to be −19.6 kcal/mol, and the drug adsorbed via its Cl and H atoms on the edge of the B36 borophene. We found that the B36 electronic properties are
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Design analysis and applications of all-optical multifunctional logic using a semiconductor optical amplifier-based polarization rotation switch J. Comput. Electron. (IF 1.532) Pub Date : 2020-11-03 A. Raja, K. Mukherjee, J. N. Roy
In this communication, a new semiconductor optical amplifier (SOA)-based module for multi-valued logic units using the cross-polarization modulation effect is proposed and analyzed. The design is simple and compact, consisting of only three SOAs and a few passive optical elements. SOAs have very low switching power (< 1mW), and are very small (< 1 mm) and integrable into modern optical integrated circuits
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Analytical modeling to estimate the sensitivity of MEMS technology-based piezoresistive pressure sensor J. Comput. Electron. (IF 1.532) Pub Date : 2020-10-29 Vinod Belwanshi
Design and modeling of microelectromechanical system (MEMS)-based piezoresistive pressure sensor are main requirements to fabricate application-oriented pressure sensor devices for the industry, i.e., nuclear power plants, aerospace and avionics, oil and gas, Internet of Things, wearable electronics and consumer electronics. In this research work, analytical modeling is presented to estimate the overall
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Quantum transport simulation of graphene-nanoribbon field-effect transistors with defects J. Comput. Electron. (IF 1.532) Pub Date : 2020-10-28 Shanmeng Chen, Maarten L. Van de Put, Massimo V. Fischetti
We present a theoretical study of the effect of defects on the charge-transport properties of gate-all-around graphene nanoribbons field-effect transistors. Electronic transport is treated atomistically using an efficient method we have recently proposed that makes use of a Bloch-wave basis obtained from empirical pseudopotentials and solves the Schrödinger equation with open boundary conditions using
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Device simulations of a novel nanostructured CdS/CdTe solar cell with back contacts J. Comput. Electron. (IF 1.532) Pub Date : 2020-10-26 Dinesh Kumar, N. Shyam Krishnan, Murugaiya Sridar Ilango, Sheela K. Ramasesha
Device simulations of a novel nanopillar-based n-CdS/p-CdTe solar cell with back contacts are carried out using the SILVACO technology computer-aided design (TCAD) device simulator. The device consists of nanopillars of CdTe coated with a very thin layer of CdS. It is shown that, for nanopillars with increasing height but given width as well as increasing width and given height, device performance
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Square structured photonic crystal fiber based THz sensor design for human body protein detection J. Comput. Electron. (IF 1.532) Pub Date : 2020-10-26 Md. Aminul Islam, Mohammad Rakibul Islam, Ahmed Mujtaba Al Naser, Fariha Anzum, Fatema Zerin Jaba
In this manuscript, a squared hollow-core photonic crystal fiber-sensor is introduced, which can be used for efficient amino acid investigations using THz waves. Amino acid identification is crucial in medical science, particularly in the drug discovery. The performance analysis has been conducted using the finite element method (FEM) based the COMSOL MULTIPHYSICS software package, and important waveguide
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Drain-engineered vertically stacked junctionless FET exhibiting complementary operation J. Comput. Electron. (IF 1.532) Pub Date : 2020-10-23 M. Ehteshamuddin, Sajad A. Loan, M. Rafat
In this work, a multifunctional drain-engineered (DE) vertically stacked (VS) junctionless (JL) FET exhibiting device reconfigurability and its application as an inverter are proposed and simulated. The proposed DE VS JL FET consists of stacked \({n}^{+}\) and \({p}^{+}\) device layers having SiO\(_{2}\) isolation vertically, with n-drain (\({D}_n\)) and p-drain (\({D}_p\)) silicide regions connected
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