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This article introduces a robust approach for pin-to-port assignment in multiboard field-programmable gate array designs. The problem has been known for a long time and is especially annoying in relatively large data acquisition (DAQ) systems, such as DAQ and control systems for high-energy physics experiments, where hundreds of differential signals are routed via multiple boards. However, there is

Data collected from the X-ray fluorescence-computed tomography (XFCT) is frequently reconstructed with algorithms proposed for X-ray transmission tomography. As these algorithms do not model the self-absorption effect inherent to XFCT, their capacity on accurately reconstructing the elemental distribution is limited. Although algorithms specialized for XFCT reconstruction have been developed, the majority

Characterizing low-energy neutrons (<10 MeV)-induced single-event upsets (SEUs) and multiple cells upsets (MCUs) is essential to validate the current standard for terrestrial soft error rate (SER) and investigate its enhancement. Following our preliminary analysis on the contribution of the low-energy neutrons to the total terrestrial SER at the nominal operating voltage of 1.0 V by Liao et al. (2020)

A pulsed laser has been effectively applied in dose rate effects simulation for its stable pulse output, low cost, simple operation, and lack of ionizing risks for users. The conversion factor (CF) was proposed to describe the equivalence between the responses generated by pulsed laser and pulsed ionizing radiation (e.g., $\gamma $ -ray). Previously, the peak photocurrent was commonly used to calculate

Lu 2(1–x) Y 2x SiO 5 (LYSO) crystals readout by a silicon photomultiplier (SiPM) will be used in the barrel timing layer of a precision timing detector for the Compact Muon Solenoid (CMS) experiment at the High-Luminosity Large Hadron Collider (HL-LHC). This detector is expected to be exposed up to 5-Mrad $\gamma $ -ray dose, $2.5\times 10^{13}$ charged hadrons/cm 2 , and $3\times 10^{14}\,\,\text{n}_{\mathrm

The stochastic Richardson extrapolation-based numerical error quantification (StREEQ) technique has been applied to accomplish a code verification for the cavity systemgenerated electromagnetic pulse (SGEMP) simulation code LASER-SGEMP. Here, the grid convergence index method estimates the discretization error caused by the finite difference, while the bootstrap sampling demonstrates the sampling error

To explore the role of hydrogen in radiation degradation of AlGaN/GaN high-electron-mobility transistors (HEMTs), the performance degradation of the hydrogen untreated and pretreated devices is compared under the exposure of carbon ions. The energy of carbon ions is chosen as 7.6 MeV, and the maximum fluence reaches $4 \times 10^{12}$ cm −2 . By electrical character measuring, it is found that the

The electrical degradation in AlGaN/GaN high-electron-mobility transistors (HEMTs) is examined under irradiation with 7.6-MeV carbon (C), 20-MeV oxygen (O), and 30-MeV fluorine (F) ions in situ . To characterize the radiation damage in the HEMTs, the ionizing dose $D_{i}$ , displacement dose $D_{d}$ , and number of vacancies versus the chip depth in the devices have been calculated for heavy ions.

During heavy-ion experiments, the single-event gate rupture (SEGR) effects can still be observed in the vertical double-diffused power MOSFET (VDMOS) with radiation-hardened cells. Fault analysis demonstrates that the hot spots locate at the termination of the VDMOS. Then, several mitigation solutions for termination structure are discussed comprehensively by means of TCAD simulations. Finally, a combined

We present a novel approach for real-time implementation of raw image data processing using modern hardware for material classification and pseudocolor presentation of the images in X-ray baggage inspection systems. This implementation was done using a heterogeneous hardware comprising field-programmable gate array (FPGA) and an ARM processor available in a Xilinx FPGA board. With implementation of

This article describes a new concept of developing a composite plastic scintillator (PS) with better light out and detection efficiency of ionizing radiations by loading high $Z_{\mathrm {eff}}$ radioluminescence (RL) phosphor powder. Gamma-ray interaction in PSs has been enhanced due to increased photoelectric absorption in the loaded BaFBr:Eu 2+ phosphor powder. RL BaFBr:Eu 2+ powder has been synthesized

With the growing number of facilities applying nuclear technology in China, a high-performance portable gamma-ray camera that uses well-developed gamma-ray imaging techniques is increasingly required. To fulfill this requirement, we have designed a camera using a self-supported mask, a CsI(Na) array coupled to a silicon photomultiplier (SiPM) rather than the traditional position-sensitive photomultiplier

A transimpedance amplifier (TIA) is an essential electronic circuit in prompt gamma detection. To improve the performance and reliability of the electronics, we designed a TIA using GaN high electron mobility transistor (HEMT) as it is more radiation-hardened when compared to its silicon counterpart and it has lower noise. Our circuit is designed using GaN HEMT from efficient power conversion (EPC)

The general-purpose PreAmplifier–DIscriminator application-specific integrated circuit (ASIC) chip, PADI, was originally designed to be used as front-end electronics (FEE) for reading out the timing resistive plate chambers in the time-of-flight (TOF) wall of the compressed baryonic matter (CBM) experiment of the future Facility for Antiproton and Ion Research (FAIR) facility in Darmstadt, Germany

The first DSSC 1-Mpixel camera became available at the European XFEL (EuXFEL) in the Hamburg area in February 2019. It was successfully tested, installed, and commissioned at the Spectroscopy and Coherent Scattering Instrument. DSSC is a high-speed, large-area, 2-D imaging detector system optimized for photon science applications in the energy range between 0.25 and 6 keV. The camera is based on direct

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The 57th IEEE Nuclear and Space Radiation Effects Conference (NSREC) was held from November 29 to December 30, 2020. Due to the COVID-19 pandemic, the conference was conducted virtually, featuring live online interactions between conference attendees and recorded content from presenters. The live portions of the conference were held from November 29 to December 8, after which all content was made available

The May 2021 Special Issue of the IEEE Transactions on Nuclear Science (TNS) contains selected papers from the 57th annual IEEE International Nuclear and Space Radiation Effects Conference (NSREC), which was held virtually from November 29 through December 30, 2020. The 2020 IEEE NSREC was sponsored by the IEEE Nuclear and Plasma Sciences Society. More than 60 of the papers presented during NSREC are

List of Reviewers

It is a long-standing tradition of the IEEE Nuclear and Space Radiation Effects Conference (NSREC) to recognize the Outstanding Conference Paper, the Outstanding Data Workshop Presentation, and the best paper presented and first-authored by an IEEE Student Member. In addition to recognizing authors for particularly high quality and relevant work, the awards process also encourages all authors to produce

The recipients of the 2020 NSREC Outstanding Conference Paper Award are George N. Tzintzarov, Adrian Ildefonso, Jeffrey W. Teng, Milad Frounchi, Albert Djikeng, Prahlad Iyengar, Patrick S. Goley, Ani Khachatrian, Joel M. Hales, Ryan Bahr, Stephen Buchner, Dale McMorrow, and John D. Cressler for their paper entitled “Optical Single-Event Transients Induced in Integrated Silicon-Photonic Waveguides by

Edward A. Burke passed away peacefully on April 19, 2020, at the age of 91. Ed was a native of South Boston and graduated from South Boston High School at age 15. Ed received the B.S. degree in chemical engineering at Northeastern University in 1950 and studied at the University of Rochester (1953) and MIT (1973). He also served in the Air Force during the Korean conflict.

Arthur B. Campbell, age 76, passed away on January 6, 2020. He was born September 3, 1943, graduated from Summit High School, Summit, NJ, USA, in 1961, and earned a Bachelor of Science Degree from Union College, Schenectady, NY, USA, in 1965. He went on to earn a Ph.D. degree in physics from The University of Delaware, Newark, DE, USA, in 1971, where he wrote his thesis on “Mass-Spectrometric Study

Thomas David (Tom) Ellis died peacefully on November 20, 2020, in Oak Harbor, WA, USA. After earning bachelor’s and master’s degrees in electrical engineering from Purdue University, West Lafayette, IN, USA, Tom joined the Naval Ammunition Depot, Crane, IN (now the Naval Surface Warfare Center—Crane Division). Tom later earned a master’s degree in public affairs from Indiana University, Bloomington

Andrew Holmes-Siedle was born in Brighton, England, served in the U.K. Royal Air Force, graduated in chemistry from Trinity College, Dublin, in 1954, and completed the Ph.D. degree and post-doctoral research on the transfer of energy within biological and chemical systems at Cambridge University from 1954 to 1960. He then worked on communication satellite designs with Hawker-Siddeley (now British Aerospace)

Joseph C. Peden, age 86, died on April 21, 2020, from heart failure. He was born in Smithton, PA (near Pittsburgh), USA, on December 27, 1934. He earned a degree in nuclear engineering from Penn State University, State College, PA, USA, in 1956. He began his professional career at the Hanford Plutonium Works in Richland, WA, USA, which at that time was managed by General Electric (GE). During that

Edward Leland Petersen, age 87, of Warrenton, VA, USA, passed away on April 1, 2020. Ed received the B.S. and M.S. degrees in physics from Oregon State University, Corvallis, OR, USA, and the Ph.D. degree in nuclear physics from the University of California (UCLA), Los Angeles, CA, USA. He joined the Naval Research Laboratory in 1969 as a member of the Radiation Effects Branch where he initiated his

William E. (“Bill”) Price joined the Army Air Corp during World War II after graduating from high school. His first two years of higher education were at Gettysburg College, Gettysburg, PA, USA. With an interest in nuclear power, he transferred to Waynesburg College and completed his Bachelor of Science degree in physics in 1951. He began his career as an entry-level physicist at the Naval Ordinance

James Carroll Ritter, age 85, passed away on May 2, 2020. Jim grew up in Denver, CO, USA, and attended the University of Colorado in Boulder, CO, USA, from which he graduated in 1957 with a degree ( cum laude ) in physics, and where he met his wife, Diane Chesnut. Jim graduated from Purdue University, West Lafayette, IN, USA, in 1962 with a master’s degree in nuclear physics. He continued his studies

Dante M. (Danny) Tasca died in Philadelphia, PA, USA, on February 28, 2020, at age 80. He was born on January 3, 1940. Danny received a degree in electrical engineering in 1964 from Drexel University in Philadelphia. He then began an engineering career that spanned more than fifty years at General Electric (GE) and successor companies (Martin Marietta and Lockheed Martin). Danny was an exceptionally

Despite hitting major roadblocks in 2-D scaling, NAND flash continues to scale in the vertical direction and dominate the commercial nonvolatile memory market. However, several emerging nonvolatile technologies are under development by major commercial foundries or are already in small volume production, motivated by storage-class memory and embedded application drivers. These include spin-transfer

This article investigates heavy-ion irradiation effects on perpendicular magnetic anisotropy spin-transfer torque magnetic tunnel junction devices (PMA STT-MTJs). The radiative campaign took place at the Université Catholique de Leuven (UCL) facility. The considered devices consist of STT p-MTJs purely magnetic memories and they were fabricated at SPINTEC using the most advanced CoFeB-MgO MTJ technology

In this article, we present Tool suIte for rAdiation Reliability Assessment (TIARA), an industrial version of a Monte Carlo single-event simulation platform, enabling fast and accurate soft error rate (SER) estimations. This tool is capable of simulating logic cells manufactured in several technologies such as fully depleted silicon on insulator (FD-SOI), FinFET, and planar bulk CMOS. Moreover, TIARA

Both experiments and simulations have shown that single-event burnout (SEB), a catastrophic event, occurs at less than half of the rated blocking voltage in commercial 4H-SiC power devices under a heavy-ion strike. The failure was shown to be due to significant impact ionization near the epi/substrate interface. Adding a buffer layer between the drift epi and substrate layers reduces the impact ionization

We study the impact of irradiation on magnetic tunnel junction (MTJ) films with perpendicular magnetic anisotropy (PMA) and spin–orbit torque (SOT) switching using magneto-optical Kerr effect and transmission electron microscopy. Our results show that the thin-film stack is robust to gamma ionizing dose up to 1 Mrad(Si) and Ta 1+ ion irradiation fluences up to 10 12 ions/cm 2 , showing SOT PMA MTJs

Gate-all-around (GAA) silicon nanowire (NW) CMOS transistors demonstrate outstanding total-ionizing-dose (TID) tolerance due to the ultrascaled gate dielectric thickness, enhanced electrostatic gate control, and suppression of parasitic leakage current paths. nFETs and pFETs show similar TID responses, making the GAA NW technology an excellent candidate for CMOS IC applications in high-radiation environments

This study investigates the response of synchronous dynamic random access memories to energetic electrons and especially the possibility of electrons to cause stuck bits in these memories. Three different memories with different node sizes (63, 72, and 110 nm) were tested. Electrons with energies between 6 and 200 MeV were used at RADiation Effects Facility (RADEF) in Jyväskylä, Finland, and at Very

Bulk 14-nm FinFET technology was irradiated in a heavy-ion environment (42-MeV Si ions) to study the possibility of displacement damage (DD) in scaled technology devices, resulting in drive current degradation with increased cumulative fluence. These devices were also exposed to an electron beam, proton beam, and cobalt-60 source (gamma radiation) to further elucidate the physics of the device response

Emerging nonvolatile memories (eNVMs) have demonstrated satisfactory accuracy on various applications in deep learning. Characterized by high density and low leakage power consumption, resistive random access memory (RRAM) becomes very attractive in synaptic devices for deep neural networks (DNNs). RRAM-based synaptic devices include both analog and discrete versions. Unlike analog RRAM synapses which

Dark current and associated random telegraph signals are studied in short-wave infrared image sensors. The effects of space radiation on these parameters are analyzed and modeled to understand the degradation in this indium–gallium–arsenide (InGaA)-based technology. Multiple proton tests were performed to cover the space mission range of radiation dose. Comparison with existing data and damage factors

We report on alpha and neutron irradiation of 7.8 $\boldsymbol {\mu }\text{m}$ single-photon avalanche diodes (SPADs) manufactured in 40-nm CMOS. Displacement damage leads to persistent dark count rate hot spots, due to carrier generation centers introduced by radiation. Defects are studied as a function of temperature and electrical stress, with live acquisitions evidencing large amounts of short-term

We investigated the coupled radiation and temperature effect on the gain degradation of erbium-doped fiber amplifier (EDFA) and erbium–ytterbium-doped fiber amplifier (EYDFA). The irradiation temperatures range from −40 °C to 120 °C. Steady-state $X$ -ray (40 keV, 300 krad (SiO 2 ), ~27 rad/s) experiments provide evidence for a minor coupled radiation and temperature effect on the gains of both reference

Peak transient currents due to pulsed-laser or heavy-ion irradiation of Ge $p$ MOS FinFETs are nearly independent of gate bias. This is because the prompt photocurrent is due primarily to a transient source–drain shunt. In contrast, long-term diffusion charge collection is strongly gate-bias dependent. This bias dependence results from hole injection from the source in response to the transient increase

In recent years, there has been an effort to create a standardized benchmark for radiation testing field-programmable gate arrays and microprocessors. The first version of benchmark was released in 2015. The input vectors and the error checkers have an unknown effect on previous test results gathered by the released benchmark. The checkers in the released benchmarks are efficient, but the variability

In this article, we present the effects of voltage scaling and forward body biasing (FBB) on single-event effect sensitivity of a 28-nm ultra-thin body and box (UTBB) fully depleted silicon on insulator (FD-SOI) technology. Heavy-ion irradiation was performed for single-event upset (SEU) and single-event transient (SET) sensitivity assessment on characterization test chips under three supply voltages

Reliability-focused benchmarks are used to test systems in harsh operating conditions, including space and terrestrial radiation environment. The sensitivity to single-event effects of a microprocessor in a radiation environment depends on the set of input vectors used at the time of testing due to logical masking. This article analyzes the impact of the input test set on the cross section of the microprocessor

A heavy-ion beam monitor based on 3-D NAND flash memories was designed and tested with heavy ions at high energy and low linear energy transfer (LET). The capability of measuring fluence, angle, uniformity, and LET of impinging particles is discussed, together with the advantages over SRAM-based implementations. We propose ad hoc algorithms for the extraction of the beam parameters, based only on user-mode

Recent advances in semiconductor processing technology have enabled development of a solid-state neutron sensor with exceptional efficiency for its unique reduced size. The boron-10 ( $n$ , alpha) capture reaction is used to detect incident thermal neutrons. This reaction offers significant advantages for a small detector because the reaction products have high energies which can generate a large number

This article presents a static random access memory (SRAM)-based flexible radiation monitor. The monitor was fabricated in a 65-nm CMOS technology and it is designed as an application-specific integrated circuit, which comprises 768k bits SRAM cell matrix with individual power supply and a digital control core with a serial peripheral interface (SPI). By adjusting the core voltage of the SRAM matrix

The total ionizing dose (TID) sensitivity of mature and innovative technologies is investigated using both ionizing radiation experiments and Monte-Carlo simulations to discuss the potential of spectral photon radiation sources as an alternative for radiation effects studies. The impact of both technological and radiation test parameters on effective TID deposition is also discussed. All the layers

Integration-technology feature shrink increases computing-system susceptibility to single-event effects (SEE). While modeling SEE faults will be critical, an integrated processor’s scope makes physically correct modeling computationally intractable. Without useful models, presilicon evaluation of fault-tolerance approaches becomes impossible. To incorporate accurate transistor-level effects at a system

Total ionizing dose (TID) effects induced by different photon sources are studied in MOS devices. The dose factor (DF), defined as the ratio between dose deposition in dosimeter and actual dose deposition in MOS-sensitive oxides (SOs), is estimated using Monte-Carlo simulations of energetic photons striking simple device structures. An effective TID approach is proposed to account for both the real