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Non-equilibrium Green's function analysis of charge plasma-based source-drain electrode P-type MoTe2 MOSFET for high sensitivity hydrogen sensing Micro Nanostruct. (IF 3.1) Pub Date : 2024-03-18 Sharmistha Shee Kanrar, Subir Kumar Sarkar
—The paper presents a novel P-type molybdenum ditelluride (MoTe) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for high sensitivity hydrogen sensing applications. Through the utilization of palladium at the source-drain charge plasma electrode, P+ regions at both ends are generated, obviating the necessity for low-dimensional MoTe doping. Simultaneously, the inclusion of palladium
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Combustion synthesis of spinel structured NiCo2O4 nanostructures: An efficient material for gas sensing and supercapacitor electrode applications Micro Nanostruct. (IF 3.1) Pub Date : 2024-03-17 Reshma Prakshale, Sachin Bangale, Mahesh Kamble, Sanjay Sonawale
Nanostructured spinel NiCoO powder has been effectively synthesized using the solution combustion technique. The synthesized material was annealed at 500 °C and further utilised for gas sensing and energy storage applications. The thermal, structural, optical, electrical, magnetic and morphological properties of synthesized material were investigated in detail. The annealed synthesized NiCoO powder
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Estimation enhancing in optoelectronic property: A novel approach using orbital interaction parameters and tight-binding Micro Nanostruct. (IF 3.1) Pub Date : 2024-03-09 Ali Haji Ebrahim Zargar, Ali Amini, Ahmad Ayatollahi
This paper advocates for an innovative approach designed for estimating optoelectronic properties of quantum structures utilizing Tight-Binding (TB) theory. Predicated on the comparative analysis between estimated and actual properties, the study strives to validate the efficacy of this proposed technique; focusing notably on the computation of bandgap energy. It is observed that preceding methodologies
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Kinetic phase phenomena of model with the chemical formula [formula omitted] on honeycomb lattice Micro Nanostruct. (IF 3.1) Pub Date : 2024-03-08 M. Batı, M. Ertaş
We investigate the ferromagnetic–ferrimagnetic ternary alloy model with the chemical formula with mean-field theory based on Glauber-type stochastic dynamics, namely dynamic mean-field theory, on a honeycomb lattice consisting of spins , and . The model includes a selective site disorder, meaning that can randomly have as its nearest neighbor or with probability . The mean-field dynamic equations were
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Investigation of different buffer layer impact on AlN/GaN/AlGaN HEMT using silicon carbide substrate for high-speed RF applications Micro Nanostruct. (IF 3.1) Pub Date : 2024-03-07 Ramkumar Natarajan, P. Murugapandiyan, N. Vigneshwari, A. Mohanbabu, Karthikeyan S, S. Ravi
The AlN/GaN heterostructure on the AlGaN back barrier with different buffer layer structures using a silicon carbide (SiC) substrate was investigated in this work. This study mainly focused on selecting a cost-effective buffer layer with a thickness of more than 1 μm and fewer defects for improving DC/RF performance. The extra epitaxial growth process steps can be avoided by choosing an appropriate
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Simulation and optimization of triple cation Perovskite solar cell using SCAPS-1D Micro Nanostruct. (IF 3.1) Pub Date : 2024-03-07 Ting Gou, Yang Li, Zeyuan Lv, Minglin Zhao, Jun Dai, Fuyang Cao
Triple cation (Cs(MAFA)Pb(IBr)) perovskites have attracted extensive attention owing to their excellent stability and photovoltaic performance. In this work, an efficient perovskite solar cell with a structure of TiO/Cs(MAFA)Pb(IBr) (CsFAMA)/CuSCN was proposed and optimized theoretically using the solar cell simulator capacitance software (SCAPS-1D). This study optimized the parameters of the absorber
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Enhancement mode β-(Al0.19Ga0.81)2O3/Ga2O3 HFETs with superlattice back-barrier layer Micro Nanostruct. (IF 3.1) Pub Date : 2024-03-07 Gökhan Atmaca, Ho-Young Cha
In this study, we numerically investigate the improvement in maximum drain current of an enhancement-mode β-(AlGa)O/GaO heterostructure field-effect transistor (HFET) that employs a superlattice back-barrier layer. The measured transfer characteristics of a recently reported enhancement-mode β-(AlGa)O/GaO HFET are reproduced using a device simulation and modeling tool. Subsequently, the transfer, output
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Cd0.2Zn0.8O nanowire thin film transistor for low kickback high-speed AMLCD circuit applications Micro Nanostruct. (IF 3.1) Pub Date : 2024-03-07 Binay Binod Kumar, Sarvesh Dubey, Satyabrata Jit, Kunal Singh
This paper reports the CdZnO channel cylindrical gate-all-around nanowire thin-film transistor (CY-GAA-NWTFT) for high-speed active-matrix liquid crystal display (AMLCD) pixel circuit with minimal kickback voltage. The AC/DC, analog, and energy efficiency of this device are investigated against the variation in lateral (channel length) as well as vertical dimension (oxide thickness) using technology
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Effect of natural non-metallic impurities on the electronic structure and optical properties of sphalerite ZnS Micro Nanostruct. (IF 3.1) Pub Date : 2024-03-06 Zhiqiang Wu, Xiaoqin Tang, Yao Feng, Xiangyu Li, Ye Chen
Impurity-bearing sphalerite is widely found in nature and plays a vital role in photocatalysis. A systematic theoretical study of the crystal structure, band gap and optical properties of ZnS containing Si, Se and P impurities, respectively, is carried out using density functional theory calculations. The results show that non-metallic atoms in the interstices narrow the ZnS bandgap, improving the
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Performance evaluation of an eco-friendly and highly efficient FASnI3-Based perovskite solar cell using Mg-doped CuCrO2 as HTL Micro Nanostruct. (IF 3.1) Pub Date : 2024-03-06 Zouhir Lakhili, Hassan Qjidaaa
Perovskite-based solar cells have emerged as promising photovoltaic devices. However, challenges involving unstable and toxic materials hinder their commercial use. Addressing these issues, the investigation incorporates a non-toxic tin-based absorber layer and specific inorganic charge transporter materials. The focus is on Formamidinium Tin Iodide (FASnI) based perovskite solar cells (PSCs), known
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Comparison of SiGeC/SiGe/SiC–Si heterojunction based vertical nanowire FET using non equilibrium Green's function Micro Nanostruct. (IF 3.1) Pub Date : 2024-03-06 Ravi Ranjan, Prateek Kumar, Naveen Kumar
Advancement in FET technology has forced researchers to seek alternate semiconductor devices and materials. TFETs, junctionless FETs, and nanowires are a few examples of modern FETs, whereas Si alloys, graphene, and TMDC are a few materials that have shown promising behaviour to replace Si in the future. In this work, SiGeC/SiGe/SiC–Si based vertical heterostructure nanowires have been investigated
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Influence of varying carbon oxides concentrations on the selectivity of an electrical sensor utilizing graphene nanoribbons Micro Nanostruct. (IF 3.1) Pub Date : 2024-03-01 Mohd Mudassir Husain, Mohd Taazeem Ansari, A. Almohammedi
We have considered a graphene nano ribbon-based two probe-device working on the principle of alteration of current-voltage (I–V) characteristic, upon interactions of its channel material with the adsorbed gas molecules. The analysis of sensing parameters alongside the electron transport mechanism was carried out by using density functional theory (DFT) formulated on the Hohenberg-Kohen paradigm in
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Effect of the introduction of ethylenedioxythiophene and styrilnitroisooxazol groups on the properties and photovoltaic performances of tryphenylamine based [formula omitted] −conjugated push-pull molecules Micro Nanostruct. (IF 3.1) Pub Date : 2024-03-01 Gean C. Arteaga, Guy Louarn, Andrea Ramos-Hernández, Mario Romero, Ludovic Arzel, Jean Christian Bernède, Jorge Saavedra-Olavarría, Edwin G. Pérez, Julio R. Maza, Jonathan Romero, Linda Cattin
Properties of -conjugated push-pull molecules based on triphenylamine have been modified through the introduction of ethylenedioxythiophene and a styrilnitroisooxazol group. It is shown that the obtained new molecule called GC8 exhibits light absorption in the visible, between 400 nm and 700 nm and a high hole mobility of 210 cmVs, which places this organic donor among those with good mobility in this
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CGS/CIGS single and triple-junction thin film solar cell: Optimization of CGS/CIGS solar cell at current matching point Micro Nanostruct. (IF 3.1) Pub Date : 2024-02-29 Rafik Zouache, Idris Bouchama, Okba Saidani, Mohamed Amine Ghebouli, M. Saeed Akhtar, M.A. Saeed, Samah Boudour, Leila Lamiri, Ouafia Belgherbi, Meriem Messaoudi
The simulations have been carried out to study and investigate the performance of the photovoltaic J-V characteristics of triple-junction solar cells based on Cu(In,Ga)Se2 absorbers using 2D Silvaco/Atlas simulator. The triple-junction configuration was considered as a single layer of CGS on top while the CIGS single layer was separated for middle and bottom cells. The investigations for CIGS solar
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Analytical modeling of spacer-engineered reconfigurable silicon nanowire Schottky barrier transistor for biosensing applications Micro Nanostruct. (IF 3.1) Pub Date : 2024-02-29 Vijay Thakur, Anil Kumar, Sumit Kale
In this work, we present a comprehensive analytical model for the Spacer-Engineered Reconfigurable Silicon Nanowire Schottky Barrier Transistor (SE R–Si NW SBT) for biosensing applications. This device operates in both n-mode and p-mode configurations by incorporating dual gates located near the source and drain terminals. The electrostatic integrity of the device is enhanced by incorporating high-K
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Machine learning-based model inference for spectral response of photonic crystals Micro Nanostruct. (IF 3.1) Pub Date : 2024-02-29 Umer Iftikhar Mir, Usama Mir, Talha Mir, Zain Nadeem, Syed Muhammad Tariq
Photonic Crystals (PhCs) are materials with a periodic arrangement of dielectric or metallic components that can manipulate the flow of photons. Conventional techniques for computing the spectrum response of these artificial structures are time-consuming, laborious, and susceptible to human errors. This paper presents a novel approach incorporating Machine Learning (ML) in forming PhC-based periodic
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The application of C/Sb composite multilayer films on fast flexible phase change memory Micro Nanostruct. (IF 3.1) Pub Date : 2024-02-27 Yukun Wang, Yifeng Hu, Li Li
In this paper, the phase transformation properties of C/Sb composite multilayer films based on flexible substrates were studied. After different times of bending, the flexible films can still achieve amorphous to crystalline phase transition, but the crystalline resistance increases to different degrees. When the bending times are less than 15000 times, the deformation makes the grain fine, the surface
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Performance investigation of elevated source EBG TFET based photosensor for near-infrared light sensing applications Micro Nanostruct. (IF 3.1) Pub Date : 2024-02-27 Tammisetti Ashok, Chandan Kumar Pandey
In this manuscript, an elevated source TFET with extended back gate (ES-EBG-TFET) based photosensor is designed to offer improvement in optical performance for detecting incident light of narrow-spaced wavelengths (∼100 nm) and low luminous intensity (<0.9 W/cm) in the near-infrared (IR) range. The proposed photosensor combines the advantages provided by both the elevated top gate and extended back
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Efficiency improvement of thin film CuIn1-xGaxSe2 structure for solar cells applications Micro Nanostruct. (IF 3.1) Pub Date : 2024-02-27 A. Benahmed, A. Aissat, B. Ayachi, N. Sfina, F. Saidi, J.P. Vilcot
In this paper, the CuInGaSe based solar cell optimization has been established. We have simulated the structural strain effect. The effect of gallium concentration on the optical properties and the quantum external efficiency EQE was investigated. We also optimized the concentration x at low defect densities. The optimal gallium concentration is 0.30. We obtained an efficiency of the CuInGaSe absorber
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Effects of manganese doping on the lattice structure and iron ion states in La2/3Ca1/3Fe1-xMnxO3-δ Micro Nanostruct. (IF 3.1) Pub Date : 2024-02-26 Zheng Li, Hengjian Hou, Zeyi Lu, Kaiyang Gao, Guoqing Liu, Yiren Wu, Yangjie Luo, Yanfang Xia
In this paper, LaCaFeMnO(x = 0–0.6) nano particles have been prepared by the sol-gel method. X-ray diffraction (XRD) analysis revealed that with the increase of Mn doping content, the main diffraction peak shifted to the right, the lattice parameters decreased overall, and the degree of lattice distortion gradually reduced. X-ray photoelectron spectroscopy (XPS) analysis indicates that the valence
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Highly responsive and selective NO gas sensing based on room temperature sputtered nanocrystalline WO3/Si thin films Micro Nanostruct. (IF 3.1) Pub Date : 2024-02-25 Somdatta Singh, Prachi Gurawal, Gaurav Malik, Ravikant Adalati, Davinder Kaur, Ramesh Chandra
This study investigates the nitric oxide (NO) gas sensing performance of room temperature sputtered nanocrystalline WO thin films deposited on Si substrate in a single step without heat treatment. The prepared WO/Si sample properties have been systematically characterized for crystallographic, surface morphology, elemental, and chemical bonding analysis by XRD, FE-SEM, EDS, and XPS techniques, respectively
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The Study and Modeling of saturation drain voltage for junctionless FinFET Micro Nanostruct. (IF 3.1) Pub Date : 2024-02-23 Haijun Lou, Qianjin Lei, Yumei Yang, Xinnan Lin
In this work, the mechanism and model of saturation drain voltage () for Junctionless FinFET (JLF) are investigated. The of JLF is observed to increase linearly with gate voltage in all operation regions. A physics-based calculation model of JLF is built for fast and simple extraction of saturation drain voltage. The effects on of device parameters such as gate length, Fin height, Fin width and doping
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First-principles study of spintronics properties in black phosphorus materials Micro Nanostruct. (IF 3.1) Pub Date : 2024-02-20 Fulin Ning, Leyuan Gao, Jing Lu, Jia Liu, Jie Ren, Yunliang Yue, Tiege Zhou, Min Wang
This paper presents a study on the electronic structure and spin properties of Transition Metal (TM) series doped Black Phosphorus (BP) using density functional theory (DFT) computations. The results indicate that the doped-Cr atom has the lowest formation energy in the BP system compared to other defects. Intrinsic defects do not induce magnetism in the BP material. However, the six types of TM atoms
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On electron and hole accumulation in a core-shell nanowire: Study by a Monte Carlo simulation Micro Nanostruct. (IF 3.1) Pub Date : 2024-02-05 Abdelillah EL Hdiy, Quang-Tri Doan, Mohammed Ledra
A Monte-Carlo simulation is used to study carrier accumulation inside a Ge–Si core-shell nanowire inside an -doped Si substrate in the electron beam induced current technique. An ideal and a like-real nanowires are studied. For the like-real nanowire, imperfections are described by square wave functions representing modulation of Ge and Si radial dimensions. Carriers are created using an electron beam
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Effect of epoxy groups and defects on the interfacial properties of RGO/Ti composites using the first principles simulation Micro Nanostruct. (IF 3.1) Pub Date : 2024-02-02 Jianlin He, Ali Arab, Guoying Zhang, Chunwei Zhang
To develop high-performance titanium/graphene oxide/titanium (Ti/GO/Ti) matrix composites, the effects of the number of epoxy groups and the type of defects on the interfacial properties of the composite models were investigated. The increase of epoxy groups on GO resulted in the enhancement of the interfacial adhesion work but the decrease of the interfacial energy between GO and Ti groups, which
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Enhancing and switching spin-valley filtered polarizations in a magnetic WSe2 superlattice induced by Fermi velocity modulation Micro Nanostruct. (IF 3.1) Pub Date : 2024-02-01 Xuejun Qiu, Han Li, Junjiao Lu, Zhenzhou Cao, Linfeng Pan
The spin–valley transport is studied in a Fermi velocity-modulated monolayer WSe magnetic superlattice. Based on these results, a scheme that can achieve an enhancing and switching spin–valley filter is proposed in the superlattice system. We find the Fermi velocity enhanced and switched spin-valley dependent conductance transport gaps by increasing the number of Fermi velocity barriers, which are
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Tuning the electronic structure and Schottky barrier by NbX2 contact to MXY (M=Mo, W; (X≠Y)[dbnd]S, Se, Te) monolayer Micro Nanostruct. (IF 3.1) Pub Date : 2024-02-01 Umair Khan, Basit Ali, Hamid Ullah, M. Idrees, C. Nguyen, B. Amin
Electronic structure, contact type (Schottky contact) and height of the Schottky barrier at the interface of NbX and MXY (M = Mo, W; (X≠Y)S, Se, Te) metal-semiconductor (MS) contact in the form of NbX-MXY van der Waals heterostructure (vdWH) are investigated by first-principles calculations. Thermal and dynamical stabilities of these systems confirmed via Ab-initio molecular dynamics (AIMD) simulation
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Modeling of junctionless based dielectric modulated vertical TFET biosensor Micro Nanostruct. (IF 3.1) Pub Date : 2024-01-29 Randheer Kumar Ravi, Meena Panchore
This research article focuses on using a junctionless-based dielectric modulated vertical Tunnel FET (VTFET-DM-JL) as a biosensor. The objective is to detect biomolecules without the need for labeling, using electrical signals by modulating the dielectric constant. The JLFET, which is a device without any doping gradient or junction, serves as the structural foundation for this research. To understand
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A python implementation based lattice Boltzmann method for thermal behavior analysis in silicon carbide MOSFET Micro Nanostruct. (IF 3.1) Pub Date : 2024-01-24 Khaled Mansouri, Oussama Zobiri, Abdelmalek Atia, Müslüm Arıcı
In the new global industrial sector, electronics systems efficiency has become a central issue should be improved. Recently, there has been renewed interest for addressing this challenge by integrating Silicon Carbide (SiC) technology in industrial systems due to its outstanding materials properties compared to other used material. Meanwhile due to continue minimization of the scale of electronic devices
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Investigation of non-volatile and photoelectric storage characteristics for MoS2/h-BN/graphene heterojunction floating-gate transistor with the different tunneling layer thicknesses Micro Nanostruct. (IF 3.1) Pub Date : 2024-01-23 Wei Li, Tianhui Mu, Yuhua Chen, Mingjian Dai, Pengcheng Sun, Jiaying Li, Weilin Li, Zhanzi Chen, Zhuowen Wang, Ruijing Yang, Zhao Chen, Yucheng Wang, Yupan Wu, Shaoxi Wang
The non-volatile memory devices based on traditional materials are unable to adapt to the background of the post-Moore era due to high energy consumption and low transmission speed. Therefore, the two-dimensional (2D) materials receive extensive attention on account of their excellent electrical and optical properties. The floating-gate transistors based on MoS/h-BN/graphene heterojunction possess
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Modeling of negative capacitance underlap graded-channel junction accumulation mode junctionless FET in nano-scale regime Micro Nanostruct. (IF 3.1) Pub Date : 2024-01-22 A, n, k, u, s, h, , C, h, a, t, t, o, p, a, d, h, y, a, y
Analytical modeling of negative capacitance (NC) graded-channel (GC) underlap junction accumulation mode (JAM) JL-FET is presented in this literature. Here, the surface potential, threshold voltage, sub-threshold drain current, sub-threshold swing (SS) and DIBL are obtained by solving the 2D Poisson's equation and Landau-Khalatnikov (LK) equation simultaneously. Performances of the proposed NC-GC-JAM-JL-FET
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An intensive study on organic thin film transistors (OTFTs) for future flexible/wearable electronics applications Micro Nanostruct. (IF 3.1) Pub Date : 2024-01-21 J. Ajayan, S. Sreejith, M. Manikandan, V. Bharath Sreenivasulu, N. Aruna Kumari, Ajith Ravindran
Future electronic gadgets will often require computer – human interaction, necessitating the use of conformal and flexible electronic devices. Because of its low cost, biocompatibility, high flexibility and lower temperature manufacturing, OTFTs have sparked a lot of research. OTFT arrays with high performance and good integrating density have been regarded as essential enablers for subtle displays
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A ballistic model for subthreshold current and threshold voltage of the dual-material-gate nanosheet MOSFET Micro Nanostruct. (IF 3.1) Pub Date : 2024-01-21 T, e, -, K, u, a, n, g, , C, h, i, a, n, g
— A ballistic model for subthreshold current of the dual-material-gate (DMG) nanosheet (NS) MOSFET is developed based on the Landauer approach, three-dimensional scaling equation, and the continuity of subthreshold current at the interface between the control gate and screen gate in the channel, The work function difference between the screen gate and control gate can be converted into the new int
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Coexistence of doping and strain to tune electronic and optical properties of monolayer graphene Micro Nanostruct. (IF 3.1) Pub Date : 2024-01-19 Heng Ti, Ningning Su, Junqiang Wang, Hu Lu, Qun Zhang, Mengwei Li
We performed first-principles calculations to study the structural, electronic and optical properties of monolayers graphene through strain and Al atoms doping with different concentrations. The results show that band gap of pristine graphene and graphene doped with 3.at% of Al consistently increases with strain, whereas the band gap of graphene doped with 6 at%, 9 at%, and 12 at% of Al initially increases
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Morphology-correlated optical dispersion and pseudocapacitive charge storage of α-MnO2 electrodes towards simultaneous enhancement of optical transparency and areal capacitance Micro Nanostruct. (IF 3.1) Pub Date : 2024-01-19 Lukman O. Animasahun, Saheed A. Adewinbi, Bidini A. Taleatu, Adeniyi Y. Fasasi, Manish Gupta, Sandeep Kumar, Mohd Ubaidullah, Vasudeva Reddy Minnam Reddy, Woo Kyoung Kim
Herein, we presented the fabrication of α-MnO thin film pseudocapacitive electrodes with enhanced optical transparency and areal capacitance. The optimized electrodes were achieved through a low-energy, binder-free, hexamethylenetetramine-assisted electrodeposition. Before this, attempts to increase the optical transparency of MnO electrodes had only been successful by reducing its mass load and thickness
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Understanding sensing mechanism of N-doped graphene-based toxic gas sensors using electronic, thermal, mechanical, electrical, and sensing properties:A DFT study Micro Nanostruct. (IF 3.1) Pub Date : 2024-01-16 Kiran Kumar Surthi, Mamatha Thak, Kamal K. Kar
A facile and feasible protocol for the evolution of sensing characteristics of three dissimilar nitrogen-doped graphene (N-G)-based ethanol, methanol, and nitrogen-oxide gas sensors using first-principle calculations. Simulated X-ray diffraction (XRD) investigation demonstrates the sharp peak located at 7.9, 11, 13.8, and 15.4° represents (100), (111), (026), and (012) facets. Electronic properties
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An inverted T-shaped vertical tunneling InN/InxGa1-xN heterojunction TFET with high current ratio Micro Nanostruct. (IF 3.1) Pub Date : 2024-01-14 Xinglin Ren, Hongdong Zhao, Lixin Geng, Jianfeng Shi
An inverted T-shaped vertical InN/InGaN tunneling field effect transistor (TFET) with polarization-induced doping and high current ratio is proposed and investigated. An optimal structure of the proposed device is given by comparing on-state current, subthreshold voltage, and on-state/off-state current ratio. The polarization effect in III-N material induces electrons and holes in the source and drain
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TID response of hybrid FinFET with modified gate dielectric Micro Nanostruct. (IF 3.1) Pub Date : 2024-01-14 Abhishek Ray, Alok Naugarhiya, Guru Prasad Mishra
The total ionizing dose response of hybrid FinFET with a modified gate stack (GS) is investigated and examined for the various ultra-thin body (UTB) layers and combination of gate oxide stacks. Incorporation of UTB layer to the conventional FinFET enhances the mechanical strength of the device. While being irradiated, conventional FinFET with UTB layer reduces the accumulation of trap charges to a
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Tunable bandgaps, stabilities and optical properties of X3Y (X=C, Si; Y[dbnd]N, P) monolayers with and without strain Micro Nanostruct. (IF 3.1) Pub Date : 2024-01-11 Jingjin Chen, Jianrong Xiao, Xueqiong Dai, Zhiyong Wang, Zizhong Zhu
Our study explores the various properties of a novel class of two-dimensional (2D) monolayer materials, i.e., XY (X = C, Si; YN, P). The materials (i.e., CN, CP, SiN, SiP) exhibit dynamic and thermal stabilities through phonon and molecular dynamics calculations. Under biaxial tensile strain of approximately 11 %, the structures undergo only deformation, indicating their ideal strength. The phonon
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CuO thin films deposited by the dip-coating method as acetone vapor sensors: Effect of their thickness and precursor solution molarity Micro Nanostruct. (IF 3.1) Pub Date : 2024-01-11 C.R. Jácome-Martínez, J. Márquez-Marín, M. de la L. Olvera-Amador, R. Castanedo-Pérez, G. Torres-Delgado
The superficial morphology and porosity of metal oxide films play an important role in their sensing response to the presence of organic vapors. For films deposited from precursor solutions, both can be modified by varying the solution's molarity and thickness; however, their effect on the film's sensitivity has been scarcely studied in p-type materials. In this work, CuO p-type nanostructured films
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Multi-wavelength and broadband AlGaN-based LED for versatile and artificial UV light source Micro Nanostruct. (IF 3.1) Pub Date : 2024-01-08 Zhiyuan Liu, Yi Lu, Haicheng Cao, Raul Aguileta Vazquez, Rongyu Lin, Na Xiao, Xiao Tang, Mingtao Nong, Shuti Li, Tingang Liu, Xiaohang Li
This study focuses on modeling and analyzing a multi-wavelength (MW) ultraviolet light-emitting diode (UV LED) equipped with grading transition layers, which holds potential as a versatile and artificial UV light source. Commencing with the exploration of simple dual and triple-wavelength UV LEDs, we delve into the device mechanism, including the role of the grading transition layer and the control
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Effect of geometry and temperature variations on sensitivity and linearity of junctionless pH sensing FET: An experimental study Micro Nanostruct. (IF 3.1) Pub Date : 2022-03-16 Nawaz Shafi, Aasif Mohamad Bhat, Jaydeep Singh Parmar, Chitrakant Sahu, C. Periasamy
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Study of differential shot noise in ferromagnet-insulator-superconductor graphene junction with TRSB Micro Nanostruct. (IF 3.1) Pub Date : 2022-02-24 Hamidreza Emamipour
In this paper, we study differential shot noise in ferromagnet-insulator- superconductor graphene junction with time-reversal symmetry broken (TRSB) where we consider two different Cooper pairing states: one unconventional TRSB D + iS-wave and an unconventional TRSB D + iDxy-wave. We consider two regimes: the first one is the equal Fermi energies on both sides of the junction and the second regime
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Performance analysis of broadband Mid-IR graphene-phototransistor using strained black phosphorus sensing gate: DFT-NEGF investigation Micro Nanostruct. (IF 3.1) Pub Date : 2022-02-18 S.E. Farah, H. Ferhati, Z. Dibi, F. Djeffal
In this work, a new high-performance broadband Infrared Optically Controlled Graphene Field-Effect Transistor (IR–OC–GFET) using strained black phosphorus sensing gate is proposed and investigated. The impact of the hydrostatic pressure on the optoelectronic properties of bulk Black Phosphorus (BP) is studied using density functional theory (DFT) calculations, including Perdew-Burke-Ernzerhof Generalized
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Synthesis of CZTS kesterite by pH adjustment in order to improve the performance of CZTS thin film for photovoltaic applications Micro Nanostruct. (IF 3.1) Pub Date : 2022-02-16 Muhammad Aamir Shafi, Laiq Khan, Shafi Ullah, Amal Bouich, Hanif Ullah, Bernabé Mari
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Fe3O4 thin films epitaxially growth model on TiO2-terminated SrTiO3(100) Micro Nanostruct. (IF 3.1) Pub Date : 2022-02-12 Bin Cheng, Xing Liu, Jifan Hu
The advanced interface of Fe3O4/SrTiO3, popular in spintronic, has attracted considerable attention. Some experiments have given controversial results on the structure at the Fe3O4/SrTiO3(100) interface. One opinion suggests the formation of interfacial antiferromagnetic FeO layers, while another opinion suggests that are γ-Fe2O3 layers. Here, we propose a theoretical model that what kind of iron oxide
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Tuning electronic structures and optical properties of graphene/phosphorene heterostructure via electric field Micro Nanostruct. (IF 3.1) Pub Date : 2022-02-11 Jing Liu, Xiu Wu, You Xie, Jian-Min Zhang
In this study, we investigated the electronic structures and optical properties of graphene/phosphorene (G/P) heterostructures and their responses to external electric fields through first-principles calculations. The results reveal that vertically stacked monolayer graphene and phosphorene can form heterostructures through weak van der Waals interactions, and that an external electric field can effectively
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Investigating magneto-resistance in transition metals doped silicene nanoribbons Micro Nanostruct. (IF 3.1) Pub Date : 2022-02-08 Mojtaba Akbarzadeh, Mahmood Rezaee Roknabadi, Shaban Reza Ghorbani, Mohammad Behdani
The Magneto Resistance (MR) is investigated in magnetic impurity-doped Zigzag Silicene Nano-Ribbons (ZSiNR) through Density Functional Theory (DFT) and Non-Equilibrium Green's Functions (NEGF) formalism using different spin configurations (Ferromagnetic (FM) and Antiferromagnetic (AFM)) in electrodes. The MR is calculated, and results show a GMR of about 2×104% at 0.01V bias voltage for up-spin electrons
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Impact of channel parameters on threshold voltage at variable temperatures of Double-gate CNTFET Micro Nanostruct. (IF 3.1) Pub Date : 2022-02-07 Aakanksha Lakhanpal, Karmjit Singh Sandha
This paper focuses mainly on the effect of various channel parameters like chirality, diameter of CNT, high-k dielectric materials and oxide layer thickness of DG-CNTFET on the threshold voltage at different temperature range of 225K–400K using nanoHUB simulation tools. The minor reductions (less than 5%) in threshold voltage of DG-CNTFET with respect to variable temperature increasing from 225K to
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Enhanced electronic and optical responses of nitrogen- or boron-doped BeO monolayer: First principle computation Micro Nanostruct. (IF 3.1) Pub Date : 2021-12-02 Nzar Rauf Abdullah, Botan Jawdat Abdullah, Hunar Omar Rshid, Chi-Shung Tang, Andrei Manolescu, Vidar Gudmundsson
In this work, the electronic and optical properties of a Nitrogen (N) or a Boron (B) doped BeO monolayer are investigated in the framework of density functional theory. It is known that the band gap of a BeO monolayer is large leading to poor material for optoelectronic devices in a wide range of energy. Using N or B dopant atoms, we find that the band gap can be tuned and the optical properties can
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Switchable absorbing, reflecting, and transmitting metasurface by employing vanadium dioxide on the same frequency Micro Nanostruct. (IF 3.1) Pub Date : 2021-12-02 Yunpeng Liu, Lin Dong, Jiangshan Zheng, Mohd Faizul Mohd Sabri, Nazia Abdul Majid, Suriani Ibrahim
In this work, we proposed a switchable metasurface based on phase transmission material of vanadium dioxide (VO2) with metal and insulation mode. Simulation results demonstrated that the metasurface can switch perfectly at frequencies of 1.89 THz and 2.67 THz from two perfect absorbing peaks to a reflecting peak and a transmitting peak. When VO2 serves as metal mode, there were two absorption peaks
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Compact analytical modeling of underlap gate stack graded channel junction accumulation mode junctionless FET in subthreshold regime Micro Nanostruct. (IF 3.1) Pub Date : 2021-12-28 Ankush Chattopadhyay, Chandan K. Sarkar, Chayanika Bose
This paper presents the compact analytical model of underlap gate stack (GS) graded channel (GC) junction accumulation mode (JAM) junctionless (JL) FET. At first, a comparative analysis between the two different graded channel schemes and non-graded channel is performed based on ION, IOFF and ION/IOFF ratio. The scheme that yields the higher ION/IOFF ratio along with smaller IOFF, is adopted in the
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Suppressing the zincblende-phase inclusions in nitrogen-polar wurtzite-phase InGaN films by pulsed metalorganic chemical vapor deposition Micro Nanostruct. (IF 3.1) Pub Date : 2022-02-05 Yang Wang, Yusen Wang, Yunfei Niu, Jiaqi Yu, Haotian Ma, Chao Lu, Gaoqiang Deng, Baolin Zhang, Yuantao Zhang
Nitrogen-polar (N-polar) wurtzite (WZ)-phase InGaN films suffer from severe zincblende (ZB)-phase inclusions and thus present a rough surface, which severely restricts its application in GaN-based optoelectronic devices. In this paper, several different pulsed modes were adopted to grow N-polar InGaN films with the purpose of suppressing the ZB-phase inclusions, and their effects on the surface morphology
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Influence of correlated impurities on electrical conductivity in bilayer graphene double layer systems Micro Nanostruct. (IF 3.1) Pub Date : 2022-02-03 Le Thi Kieu Oanh, Nguyen Quoc Khanh, Dang Khanh Linh
We study the electrical conductivity σ of three bilayer graphene (BLG) double layer systems, taking into account the presence of correlations of charged impurities. Using the Boltzmann transport equation with relaxation time approximation and the continuum model for structure factor S(q⃗), we calculate the conductivity of the first BLG layer in presence of the second layer (BLG, monolayer graphene
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Propagation characteristics of transverse electromagnetic waves in a finite-size metallic superlattice of two alternating Al–Mg layers Micro Nanostruct. (IF 3.1) Pub Date : 2022-02-03 Manal M. Al-Ali, A.M. Al-Khateeb, M.S. Bawa'aneh, S.H. Mahmood
Transfer matrix method has been used to investigate the propagation characteristics of a finite-size metallic superlattice. Wave reflectance, absorbance, and transmittance have been obtained for normally incident electromagnetic wave on a finite-size superlattice of two alternate layers of Aluminum and Magnesium. Such a periodic medium represents a simple model for a one dimensional photonic crystal
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Elucidating the electrical performance and thermal stability in14-nm FinFETs CMOS technology Micro Nanostruct. (IF 3.1) Pub Date : 2022-02-03 Faouzi Nasri, Sirine Glayed, Nejeh Jaba, Abir Mera, Mohamed Atri, Mohsen Machhout
Nanoscale device self-heating effects have become an important issue in simulation and fabrication of Bulk and SOI FinFET transistors. In this work, we have investigated a mathematical methodology to capture electrical performance and thermal stability in a 14-nm Bulk and SOI FinFET components. Finite Element method have been used to bring forth our numerical results. We have compared the electrical
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Exploring the possibility of using MWCNTs sheets as an electrode for flexible room temperature NO2 detection Micro Nanostruct. (IF 3.1) Pub Date : 2022-01-31 Rahul Kumar, Mamta, B.P. Singh, V.N. Singh
In the last few years, significant progress has been made in nanotechnology, especially in the fabrication of sensors. Generally, metal electrodes are used in devices. Here, carbon nanotubes sheet has been used as an electrode and tin oxide nanoparticles made by the sol-gel method as the sensing material. The combination was used for sensing NO2 in the atmosphere at room temperature. For the MWCNT + SnO2
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Material removal mechanism and deformation characteristics of GaN surface at the nanoscale Micro Nanostruct. (IF 3.1) Pub Date : 2022-01-31 Van-Thuc Nguyen, Te-Hua Fang
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Increasing the breakdown voltage in gate – Field plate High Electron Mobility Transistor using a surface field distribution layer and gate-drain edge passivation Micro Nanostruct. (IF 3.1) Pub Date : 2022-01-26 V. Suresh, S.K. Siddhartthan, Muthubalan Varadharajaperumal
We investigate the breakdown characteristics of AlGaN/GaN High Electron Mobility Transistor (HEMT) with surface field distribution layer (SFDL) and gate-drain edge passivation. We employ an SFDL to redistribute the surface electric field at the gate-drain edge. The combination of SFDL with gate-drain edge (Si3N4) passivation results in a considerable reduction in the peak electric field at the gate-drain
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Non-conventional Fermi velocity graphene superlattices Micro Nanostruct. (IF 3.1) Pub Date : 2022-01-24 G.J. Escalera Santos, F.J. García-Rodríguez, H. García-Cervantes, I. Rodríguez-Vargas
The transmission and transport properties of non-conventional Fermi velocity graphene superlattices (FVGSLs) are studied. Arithmetic, regular and random distributions of the Fermi velocity barriers are assessed. A velocity position-dependent Dirac-like Hamiltonian is used to describe the charge carriers. The transfer matrix method and the Landauer-Büttiker formalism are implemented to obtain the transmission