Background: Line-edge roughness (LER) is often measured from top-down critical dimension scanning electron microscope (CD-SEM) images. The true three-dimensional roughness profile of the sidewall is typically ignored in such analyses. Aim: We study the response of a CD-SEM to sidewall roughness (SWR) by simulation. Approach: We generate random rough lines and spaces, where the SWR is modeled by a known

JM3 Co-Editor-in-Chief Harry Levinson introduces new guidelines regarding materials for lithography.

Source mask and polarization optimization (SMPO) is a promising extension of the widely used resolution enhancement technology, source mask optimization (SMO), to further enhance chip manufacturability beyond 28-nm node. Our work is aimed to develop an efficient gradient-based SMPO method by employing the hybrid Hopkins–Abbe imaging model to fulfill the goal. In addition to source and mask variables

In extreme ultraviolet (EUV) lithography, chemistry is driven by secondary electrons. A deeper understanding of these processes is needed. However, electron-driven processes are inherently difficult to experimentally characterize for EUV materials, impeding targeted material engineering. A computational framework is needed to provide information for rational material engineering and identification

Background: Molecular logic circuits have great potential applications. DNA logic circuit is an important research direction of DNA computing in nanotechnology. DNA self-assembly has become a powerful tool for building nanoscale structures. The combination of different self-assembly methods is an interesting topic. Aim: Two different self-assembly methods are combined to realize large-scale logic circuit

Background: With aggressive scaling of single-expose (SE) extreme ultraviolet (EUV) lithography to the sub-7-nm node, stochastic variations play a prominent role in defining the lithographic process window (PW). Fluctuations in photon shot noise, absorption, and subsequent chemical reactions can lead to stochastic failure, directly impacting electrical yield. Aim: Fundamental characterization of the

We demonstrate a hybrid "package-less" polydimethylsiloxane (PDMS)-complementary-metal-oxide-semiconductor (CMOS)-FR4 system for contact imaging. The system embeds the CMOS image sensor directly in a PDMS layer instead of the standard chip package to support microfluidic structures much larger and more complex than those in prior art. The CMOS/PDMS layer is self-aligned to form a continuous, flat surface

Methods exist for the creation of antireflective thin film layers; however, many of these methods depend on the use of high temperatures, harsh chemical etches, or are made with difficult pattern materials, rendering them unusable for many applications. In addition, most methods of light blocking are specifically designed to increase light coupling and absorption in the substrate, making them incompatible

The decreasing size of semiconductor features and the increasing structural complexity of advanced devices have placed continuously greater demands on manufacturing metrology, arising both from the measurement challenges of smaller feature sizes and the growing requirement to characterize structures in more than just a single critical dimension. For scanning electron microscopy, this has resulted in

We compare the speed and effectiveness of two genetic optimization algorithms to the results of statistical sampling via a Markov chain Monte Carlo algorithm to find which is the most robust method for determining real space structure in periodic gratings measured using critical dimension small angle X-ray scattering. Both a covariance matrix adaptation evolutionary strategy and differential evolution

Sidewall sensing in critical dimension atomic force microscopes (CD-AFMs) usually involves continuous lateral dithering of the tip or the use of a control algorithm and fast response piezo actuator to position the tip in a manner that resembles touch-triggering of coordinate measuring machine (CMM) probes. All methods of tip position control, however, induce an effective tip width that may deviate

Hybrid metrology, e.g., the combination of several measurement techniques to determine critical dimensions, is an increasingly important approach to meet the needs of the semiconductor industry. A proper use of hybrid metrology may yield not only more reliable estimates for the quantitative characterization of 3-D structures but also a more realistic estimation of the corresponding uncertainties. Recent

We describe a method for fabricating an aperture on a fluidic cantilever device using SU-8 as a structural material. The device can ultimately be used for patch clamping, microinjections, fluidic delivery, fluidic deposition, and micromaterial removal. In the first generation of this device, the initial aperture diameter is 10 μm and is fabricated on a silicon-on-insulator (SOI) wafer that is structurally

Cancer cells create a unique microenvironment in vivo that enables migration to distant organs. To better understand the tumor micro-environment, special tools and devices are required to monitor the interactions between different cell types and the effects of particular chemical gradients. Our study presents the design and optimization of a versatile chemotaxis device, the nano-intravital device (NANIVID)

We demonstrate the fabrication of micropore and nanopore features in hollow antiresonant reflecting optical waveguides to create an electrical and optical analysis platform that can size select and detect a single nanoparticle. Micropores (4 μm diameter) are reactive-ion etched through the top SiO(2) and SiN layers of the waveguides, leaving a thin SiN membrane above the hollow core. Nanopores are