The evolution of micrometer-scale cracks in hydrogen and helium implanted silicon during isothermal annealing was studied using confocal IR microscopy. In this work, it was demonstrated that the dominant mechanism of microcrack growth was crack coalescence. The coalescence of two cracks caused a sudden crack opening in silicon and lead to the formation of a larger crack. The surface of this large crack

This month it will be exactly 60 years since the first issue of the original journal physica status solidi was published by Akademie-Verlag Berlin. While in its first three decades it served as a growing East-West scientific forum for solid state physics (see here for a detailed historical overview), since 1990 it has successfully evolved into a family of journals with truly international author- and

The pioneer of blue light-emitting diodes (LEDs) and the Nobel Laureate in Physics, Professor Isamu Akasaki, passed away from pneumonia on Thursday, April 1, 2021, at Nagoya University hospital, aged 92. He received the Nobel Prize in Physics in 2014 together with Professor Shuji Nakamura and me “for the invention of efficient blue light-emitting diodes, which has enabled bright and energy-saving white

This paper reports on the temperature dependence of DC and scattering parameters of GaAs pHEMTs before and after back-end-of-line process (multilayer technology) by evaluating corresponding equivalent-circuit models. The relative sensitivity of the microwave performance changes with ambient temperature is evaluated by using scattering parameter measurements and the corresponding equivalent-circuit

In this era of growing energy demand, the recently explored perovskite solar cells have evolved into a potentially viable alternative owing to their cost-effectiveness and high efficiency. Despite the immense research interest attracted by these materials, their commercialization remains constrained by their instability and toxic nature. Among the different advanced solar cells technology, the application

The piezo-optical coefficients (π 11 –π 12 ) and the photo-elastic constant C σ of on-axis (0001) 4H silicon carbide at λ ≈ 1.3 µm are determined to (-3.3 ± 0.5) × 10-13 Pa-1 and (-2.8 ± 0.4) × 10-12 Pa-1 respectively. The experiment is carried out by using the scanning infrared depolarization imager (SIRD) that uses a rotational mode for wafer scanning equipped with a special calibration setup for

The full solid-state, intrinsic cut-off solar-blind UV photodetectors are widely used in the military and civilian fields. Herein, to achieve real-time solar-blind UV signal detection for application in portable equipment, the material epitaxy, device fabrication, and performance characterization of high-performance back-illuminated AlGaN-based solar-blind UV photodetectors are carried out at first

To achieve higher energy density in safer energy storage systems, a transition to ceramic all-solid-state batteries is widely expected. Their performance and cycle-life is largely controlled by processes at buried interfaces. While experimental operando probing of interfacial processes is under development, first principles computational methods are challenged by the complexity of the multiphase models

In this paper, we report the synthesis of vanadium oxide thin films with high electrochromic coloration efficiency through a simple sol-gel spin coating technique. The structural studies confirm the formation of V2O3-V2O5 mixed phase at 250°C and the pure β-V2O5 phase at 350 and 450°C. The decrease in optical band gap, refractive index and extinction coefficient improves the transmission ability of

Dear Readers, Like many other things we had planned for summer 2020, the Annual Symposium Engineering of Functional Interfaces could not take place. It was scheduled for July 2020 in Maastricht, the Netherlands, when the worldwide stop of meetings, conferences, symposia, business trips, university lectures and private meetings switched everything on hold: Biological nanoparticles attained a very specific

This work investigates how the thickness of the polysilicon layer and temperatures during contact sintering influence the properties of SiOx/polysilicon passivated contacts. We investigate n+ polysilicon layers deposited by low pressure chemical vapor deposition (LPCVD) on top of a thin wet chemically grown interface oxide layer providing chemical and field effect passivation on n-type monocrystalline

In the present study the electrical and structural properties of Ag- and AgH-related defects in n- and p-type Si are reinvestigated by using conventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS. We give evidence that a peak corresponding to substitutional Ag does not always appear in as-grown Si and additional heat treatments are necessary in order to observe this

This paper proposes a parallel dual-metal-gate structure (PDM) of AlGaN/GaN high-electron-mobility transistors (HEMTs) for high-linearity applications. Cancellation of the third-order derivative of the Ids–Vgs curve (gm'') is achieved by splitting the device into two sub-cells in parallel with different gate metals. The two sub-cells have different threshold voltages. When the same bias voltage Vgs

This study presents a high-performance room-temperature extended-wavelength InAs-based barrier-type photodetector that operates in the 1.5–3.5 μm wavelength range. The experimental results show that the uncooled photodetector exhibits a peak responsivity of 1.47 A·W−1 at 3 μm, and a peak detectivity as high as 1.6 × 1010 cm·Hz1/2 W−1 at zero bias, which is 3–10 times higher than that of available commercial

Nanostructured CdS thin films are fabricated by a simple spin coating method at various annealing temperatures from 200 °C to 350 °C. CdS films of 80 nm thick which composed of nanoparticles or flakes with size ∽20 nm to 200 nm were obtained. The nanostructured morphology is identified by scanning electron microscopy measurement. Sb2S3 films with large-sized grains were deposited on the CdS thin films

In today’s world, we are surrounded by smart wireless devices which require sustainable and eco -friendly power source. Triboelectric nanogenerator (TENG)is emerging as an imperative source to produce clean, cost effective and easily fabricated battery less devices. The emphasis is on using biomaterials to play a vital role for the fabrication of such self- powered system. In this paper, an approach

In nanobiotechnology, viral nanoparticles have come into focus as interesting nano building blocks. In this context, the formation of 2D and 3D structures is of particular interest. Here, we report on the creation of defined 2D patterns of an icosahedral plant virus, the tomato bushy stunt virus (TBSV) by means of different techniques: the top-down lithographies ebeam and focused ion beam (FIB) as

A thin-film transistor (TFT) using amorphous indium-gallium-zinc-oxide (a-IGZO) as an active layer was annealed at 300 °C after deposition and then treated with oxygen plasma. To analyze the effect of radio frequency (RF) power of the plasma generator on the a-IGZO TFT, as-deposited and plasma treated devices using RF power levels of 60 W, 120 W, and 180 W were fabricated and characterized. We demonstrate

In this study, we investigate the influence of heat treatment at 400 °C on the spectrum of boron intracenter transitions in silicon using IR absorption spectroscopy. In the transition region from the ground 1Γ8 + state associated with the p3/2 valence band of Si to the odd-parity excited states of boron, a new absorption line with its maximum at 261.3 cm−1 is observed in the thermally treated boron-doped

Normally-off (E-mode) GaN high electron mobility transistors (HEMTs) using a p-type Mg-doped gate GaN layer is one of the promising candidates for future power devices. Recently, a gate process with re-grown AlGaN barrier and p-GaN after recessing the AlGaN barrier is proposed, which shows a better control of threshold voltage (Vth) and an independent ON-resistance[1]. However, the process steps prior

In this paper, we adopted fluid oil joule annealing modulation (FOJA) for improving the Giant magneto-impedance (GMI) property of CoFe-based microwires with the microstructure and magnetic domain structure systematically investigated. Compared with general joule annealing (JA) method, a much larger DC current can be employed. The maximum GMI value is 440.8% in 250 mA FOJA-treated sample and the maximum

Developing efficient, highly stable, and cheap photocatalysts are the keys to the industrial application of photocatalytic techniques. For the photocatalytic reactions, how to promote the separating of photo-generated carriers and construct active sites are crucial challenges that decide the catalysis capacity of photocatalysts. Herein, Ni3C nanoparticles were loaded on 2D g-C3N4 as electron transferring

A comprehensive study of the operating temperature (Tcr) of three non-fullerene acceptor based bulk heterojunction organic solar cells (BHJ OSCs), two conventional (OSC1 and OSC3) and one inverted (OSC2) structure, is presented. A quantitative analysis of the thermal power generated by photon absorption in transport layers and electrodes, thermalisation of photoexcited charge carriers, tail state recombination