Phys. Status Solidi A 2019 , 216 , 1900480 10.1002/pssa.201900480 In our originally published article, the name of Yongsheng Li was written incorrectly. The authors apologize for any inconvenience this may have caused.

Flexible and low power consuming integrated circuits are some of the basic requirements for smart wearable devices. High mobility solution processed organic field‐effect transistors (OFETs) have potential to make a big impact in printed electronic circuits, but their overall performance is currently limited by unusually high threshold voltages (Vth). In this article, we report systematic optimization

Three‐Dimensional carbon fiber reinforced resin matrix composite can effectively overcome the defects of the traditional composite in the strength and stiffness between layers, and greatly improve the bending bearing capacity of the composite. In this paper, the threshold infiltration pressure of resin in 3D carbon fiber preform is respective calculated as 0.170MPa and 0.973MPa from the perspective

This work addressed, in an experimental and theoretical way, the influence of different oxygen pressure values on the physical and electronic properties of thin conductive and transparent oxide films of Al‐doped ZnO, with different thicknesses. A series of characterization techniques, which include X‐Ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Optical Spectrophotometry

N‐polar InN/InAlN heterostructure growth and performance were studied on on‐ and off‐axis sapphire substrates misoriented towards m or a plane by 4°. High In molar fraction (0.57) in InAlN layer was chosen to reduce the lattice mismatch. InN growth on the on‐axis InAlN/sapphire system was initiated with random islands formation, which coalesced at ∽ 10 nm thickness smearing grain boundaries. On the

By embedding a film of highly‐aligned carbon nanotubes (CNT) into a shape memory polymer (SMP), we achieved a 4‐fold increase in resolution of nanostructures raised on demand with a simple laser pointer. In the design of nanostructured compounds for micro‐optic and microfluidic lab‐on‐chip and security applications the SMP’s imprinted surface modifications act as the active part, while the CNT film

The UV community for the fourth time took part in the International Workshop on Ultraviolet Materials and Devices (IWUMD4), which was organized in September 2019 by the Ioffe Institute, St. Petersburg, Russia. This event, following the successful meetings in Beijing, China (2016), Fukuoka, Japan (2017), Kunming, China (2018), was intended to show new horizons beyond the UV‐blue LEDs based on wide‐bandgap

Diamond nanoparticles with optically active color centers can be used in nanoscale devices for quantum networking and sensing. A particular interest is focused on nanodiamonds (ND) containing a small ensemble of negatively charged silicon‐vacancy (SiV) centers. Such NDs can be integrated with on‐chip optical structures. Here, we use CVD to synthesize diamond particles of less than 100 nm in size containing

With recent developments in high‐speed and high‐power electronics and Si‐based photonic integration, the concept of monolithic III‐V/Si integration through epitaxial methods is gaining momentum. However, the performance and reliability of epitaxially grown devices are still limited by defects in the semiconductor material, especially the threading dislocation density. In this work, a novel “asymmetric

Dear colleagues, On the next pages you will find a collection of seventeen articles devoted to the broad topic “Engineering of Functional Interfaces”. Surfaces and interfaces with task‐specific, tailored properties and functionalities are literally everywhere in daily life, ranging from catalysts and anticorrosive coatings to consumer electronics and health care. Any diode, transistor, solar cell,