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Topological Defects in Nematic Liquid Crystals: Laboratory of Fundamental Physics Phys. Status Solidi A (IF 1.759) Pub Date : 2021-01-14 Mitja Kralj; Marko Kralj; Samo Kralj
Topological defects (TDs) appear in all branches of physics due to the simplicity of generic mechanisms: the necessary condition for their existence is spontaneous symmetry breaking in a relevant physical field. Nematic liquid crystals (NLCs) represent an ideal testbed for their study and they can display point, line, textures, and in favorable conditions also wall defects. TDs could be in NLCs relatively
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Optimization of Near‐Surface Quantum Well Processing Phys. Status Solidi A (IF 1.759) Pub Date : 2021-01-12 Patrik Olausson; Lasse Södergren; Mattias Borg; Erik Lind
In this paper an optimized process flow of near‐surface quantum well MOSFETs (metal oxide semiconductor field effect transistors) based on planar layers of MOVPE (metalorganic vapor‐phase epitaxy) grown InxGa1‐xAs is presented. It is found that by an optimized pre‐growth cleaning and post metal anneal the quality of the MOS structure can be greatly enhanced. This optimization is a first step towards
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Charge‐Assisted Engineering of Colour Centres in Diamond Phys. Status Solidi A (IF 1.759) Pub Date : 2021-01-12 Tobias Lühmann; Jan Meijer; Sébastien Pezzagna
Owing to its unique optical and spin properties, the nitrogen‐vacancy NV centre holds the promise of a diamond‐based room‐temperature scalable quantum computer, but the numerous technical and physical issues were not yet overcome, especially the poor N to NV conversion. The NV and other colour centres are however successfully used as multitasking quantum sensors, and opened new routes in quantum sensing
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Tensile Creep Behavior and Microstructure Evolution of As‐Cast Mg‐9.82Gd‐0.38Zr Alloy at 250 °C Phys. Status Solidi A (IF 1.759) Pub Date : 2021-01-12 He Qin; Guangyu Yang; Lei Zhang; Shuxia Ouyang; Chunhui Wang; Wanqi Jie
In this paper the tensile creep behavior and microstructure evolution of as‐cast Mg‐9.82Gd‐0.38Zr alloy under different stresses at 250 °C were investigated. The results of creep test showed that the creep strain and steady creep rate increased with the creep stress at 250 °C. The fitted stress exponent n value (4.4) and TEM analysis suggested that the steady creep was dominated by dislocation climb
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Recent Developments of Flexible InGaZnO Thin‐Film Transistors Phys. Status Solidi A (IF 1.759) Pub Date : 2021-01-12 Jiaqi Song; Xiaodong Huang; Chuanyu Han; Yongqin Yu; Yantao Su; P. T. Lai
Flexible InGaZnO thin‐film transistors (TFTs) have been extensively investigated over the last decade with an aim to transferring electronic devices from rigid substrates to light‐weight, soft and flexible ones, and the recent developments in this field are reflected in this review. Firstly, an introduction to flexible InGaZnO TFT is provided, where the superiority over its rigid counterparts is illustrated
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Temperature and Bias Dependent Degradation and Regeneration of Perovskite Solar Cells with Organic and Inorganic Hole Transport Layers Phys. Status Solidi A (IF 1.759) Pub Date : 2021-01-08 Craig H. Swartz; Nischal Khakurel; Selena R. Najar; Mohammed I. Hossain; Alex Zakhidov
Hybrid halide perovskite solar cells have drawn widespread attention with the achievement of high power conversion efficiencies. However, poor stability remains the greatest barrier preventing their commercialization. Performance degradation and recovery has a complicated dependence on the environment as well as a dependence on the applied bias, which affects ion migration. In this study, we compare
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Evaluation of the Quality of Solder Joints within Silicon Solar Modules Using Magnetic Field Imaging Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-11 Kai Kaufmann; Dominik Lausch; Chia-Mei Lin; Maik Rudolph; Daniel Hahn; Markus Patzold
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Solvent‐Assisted Lipid Bilayer Formation on Au Surfaces: Effect of Lipid Concentration on Solid‐Supported Membrane Formation Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-29 Shova Neupane; Kai Betlem; Frank Uwe Renner; Patricia Losada-Pérez
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The Role of Interface Defect States in n‐ and p‐Type Ge Metal–Ferroelectric–Semiconductor Structures with Hf0.5Zr0.5O2 Ferroelectric Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-19 Georgia Andra Boni; Cosmin M. Istrate; Christina Zacharaki; Polychronis Tsipas; Stefanos Chaitoglou; Evangelos K. Evangelou; Athanasios Dimoulas; Ioana Pintilie; Lucian Pintilie
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MOCVD GaN with Fast Growth Rate for Vertical Power Device Applications Phys. Status Solidi A (IF 1.759) Pub Date : 2021-01-05 Yuxuan Zhang; Zhaoying Chen; Wenbo Li; Aaron R. Arehart; Steven A. Ringel; Hongping Zhao
The development of high quality GaN epitaxy with thick drift layer, low controllable doping and high mobility is key for vertical high power devices. In this paper, the effect of increasing TMGa molar flow rate on the growth rate, impurity incorporation, charge compensation, surface morphology and carrier mobility were systematically studied. An optimized MOCVD GaN growth condition with a typical growth
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Insight into the Impact of Zr/Ti Ratios on the Structure and Properties of PLZST Antiferroelectric Thick Films Phys. Status Solidi A (IF 1.759) Pub Date : 2021-01-05 Yucheng Liu; Shaopeng Liu; Tongqing Yang
In recent years, PLZST‐based antiferroelectric (AFE) materials have been generally examined, and research demonstrates that the content of each material component has a significant impact on the performance. However, a majority of the investigations focused on a 2 mol% La content. In this study, PLZST AFE thick films with 6 mol% La content and a changed Zr/Ti ratio were prepared using the rolling process
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Graphene‐Oriented Construction of 2D SnS for Methanol Gas Sensor Application Phys. Status Solidi A (IF 1.759) Pub Date : 2021-01-05 Yuxiang Qin; Jiewei Wang; Yinan Bai
Group‐IV monochalcogenides with unique two‐dimensional (2D) puckered honeycomb structure (MX, M=Ge, Sn/X=S, Se) have a great prospect in the gas sensor field. In this work, an exploratory study on 2D SnS was synthesized through a solvothermal method, is performed for promising methanol sensor. In order to break through the inhibition of the general agglomeration and poor conductivity of solvothermal
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Thermodynamic Analysis on Stress‐Mediated Barocaloric, Electrocaloric Effects and Energy Storage of PbZrO3 Antiferroelectric Film Phys. Status Solidi A (IF 1.759) Pub Date : 2021-01-05 Yi-Kai Wang; Quan-Liang Zhao; Jie-Jian Di; Guang-Ping He; Lei Zhao; Ting-Ting Su; Meng-Ying Zhang; Jie Zhang; Xu Liang; Dan Bu
A thermodynamic model is established to investigate the effects of internal stress in PbZrO3 (PZ) antiferroelectric (AFE) film on barocaloric effect (BCE), electrocaloric effect (ECE), and energy storage properties. It is found that the internal stress could change the phase transition behaviors and free energy barriers among AFE, ferroelectric (FE), and paraelectric (PE) phases. For BCE, it occurs
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Band Alignment of Graphene/MoS2/FTO Heterojunction for Photodetector Application Phys. Status Solidi A (IF 1.759) Pub Date : 2021-01-05 Roman I. Romanov; Maxim G. Kozodaev; Yury Yu. Lebedinskii; Ivan V. Zabrosaev; Evgenii A. Guberna; Andrey M. Markeev
In this work, X‐ray photoelectron spectroscopy (XPS) and absorption spectroscopy were used to investigate the band alignment in vertical graphene/MoS2/FTO heterostructure and its influence on the resulting photoelectric response. The measured Conduction Band Offset (CBO) value (0.65 eV) was found to be identical for both interfaces, while the corresponding Valence Band Offset (VBO) values were found
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Optical Properties of ZnO Deposited by Atomic Layer Deposition on Sapphire: A Comparison of Thin and Thick Films Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-19 Abinash Adhikari; Ewa Przezdziecka; Sushma Mishra; Piotr Sybilski; Jacek Sajkowski; Elzbieta Guziewicz
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Single Ion Implantation of Bismuth Phys. Status Solidi A (IF 1.759) Pub Date : 2021-01-05 Nathan Cassidy; Paul Blenkinsopp; Ian Brown; Richard J. Curry; B. N. Murdin; Roger Webb; David Cox
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60 Years of physica status solidi Phys. Status Solidi A (IF 1.759) Pub Date : 2021-01-05
Dear Reader, In July 2021 physica status solidi (pss) reaches an epic milestone: 60 years of editing, publishing, distributing, and archiving high‐quality materials physics and condensed‐matter research. pss has witnessed six decades of tremendous scientific progress that has changed the way we live. With semiconductor physics laying the foundations for the development of computer electronics and digital
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Radiation and Emission in Materials: Similarity of Principles and Multi‐Functional Applications Phys. Status Solidi A (IF 1.759) Pub Date : 2021-01-05 Andrej Kuznetsov; Somsak Dangtip; Saweat Intarasiri
1 The Field and The ICREM Energetic particle beams are of paramount importance in nature, as well as in modern day science and industry. For example, while studying material properties, one directs an appropriate beam of particles into a material and collects the interaction data. Moreover, modifications of materials with particles beams—also known in literature as radiation effects—are extremely many
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CdTe Nanocrystal Synthesis in SiO2/Si Ion‐Track Template: The Study of Electronic and Structural Properties Phys. Status Solidi A (IF 1.759) Pub Date : 2020-10-27 Rakhima Balakhayeva; Abdirash Akilbekov; Zein Baimukhanov; Abay Usseinov; Sholpan Giniyatova; Maxim Zdorovets; Luydmila Vlasukova; A. I. Popov; Alma Dauletbekova
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Influence of Multi‐Pin Anode Arrangement on Electric Field Distribution Characteristics and Its Application on Microgreen Seed Treatment Phys. Status Solidi A (IF 1.759) Pub Date : 2020-11-16 Yottana Tanakaran; Khanit Matra
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Direct Imaging with Hundreds of MeV Electron Bunches from Laser Wakefield Acceleration Phys. Status Solidi A (IF 1.759) Pub Date : 2020-11-04 Chaofan Xiao; Zhiyi Xu; Haiyang Lu; Jiaxin Liu; Chengzhi Xie; Yanying Zhao; Yixing Geng; Shiyou Chen; Chia Er Chen; Xueqing Yan
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Unveiling the Role of Al2o3 Interlayer in Indium Gallium Zinc Oxide Transistors Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-30 Tae Hyeon Kim; Woojin Park; Seyoung Oh; So-Young Kim; Naohito Yamada; Hikaru Kobayashi; Hye Yeon Jang; Jae Hyeon Nam; Hiroki Habazaki; Byoung Hun Lee; Byungjin Cho
Although insertion of a thin insulating layer between metal electrodes and a semiconducting channel is an effective way to improve device performance, the exact reason for improvement in performance has not been elucidated. In this study, we systematically investigated the role of an Al2O3 interlayer sandwiched between Al metal electrodes and an amorphous indium gallium zinc oxide semiconducting channel
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Hybrid Lead Halide Perovskite Films with Large Grain Size via Spin‐Coating Free Fabrication Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-30 Wenyan Liu; Pengfei Ma; Jiaying Xu; Changhao Wang; Chen Wang; Minglei Qu; Shanpeng Wen
In this work, a spin‐coating free method to deposit CH3NH3PbI3 perovskite films with large grains is demonstrated. The effect of processing temperature on the property of hybrid lead halide perovskite films is investigated. It is found that the grain domain size can be enlarged by increasing processing temperature. Dense and uniform CH3NH3PbI3 films with grain domain size close to 1 mm can be obtained
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Effect of Hydrogen Doping on the Gate‐Tunable Memristive Behavior of Zinc Oxide Films with and without F or N Doping Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-19 Ki-Hoon Son; Kyung-Mun Kang; Hyung-Ho Park; Hong-Sub Lee
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Color Tunable Emission of Y3Al5O12:Ce3+ and Sm3+‐Doped Zinc–Germanate–Tellurite Glass Nanocomposite Powders and Coatings for Light‐Emitting Diodes Applications Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-11 Ernesto Abraham Salazar-Valenzuela; Josefina Alvarado-Rivera; Mario Enrique Álvarez-Ramos
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Influence of Surface Polarity on Optoelectronic Properties of PEDOT:PSS/ZnO Hybrid Heterojunctions Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-29 Roman Yatskiv; Jan Grym; Stanislav Tiagulskyi; Nikola Basinova
The influence of polar and nonpolar crystallographic orientations of ZnO substrates on the current transport mechanism in PEDOT:PSS/ZnO heterojunctions is investigated by DC and AC electrical measurements. It is shown that PEDOT:PSS forms high‐quality rectifying junctions on nonpolar planes of n‐type ZnO substrates, while on polar c‐planes, the quality of the junction is affected by the surface polarity
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Photovoltaic Performance Enhancement of All‐Inorganic CsPbBr3 Perovskite Solar Cells Using In2S3 as Electron Transport Layer via Facile Reflux‐Condensation Process Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-12 Caiyou Huang; Jianlin Chen; Zhuang Liu; Shu Chen; Wei Qiu; Chang Liu; Zhuoyin Peng; Jian Chen
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Optimization of (In)GaN Heterostructures for Sensing Applications Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-11 Martin F. Schneidereit; Ahmed R. Elnahal; Paulette Iskander; Murat Cankaya; Oliver Rettig; Ferdinand Scholz
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Laser Beam‐Induced Transient Acoustic Waves in Graphene Oxides Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-11 Litty V. Thekkekara; Ivan Cole
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Analytical Frequency‐Domain Model for Coupled Interconnects of Doped Multilayer Graphene Nanoribbons and Mixed Carbon Nanotube Bundles Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-11 Tajinder Kaur; Mayank Kumar Rai; Rajesh Khanna
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Energetic Alignment‐Related Effect on Carrier Extraction in Organic Photovoltaic Devices with Cathode Conducting Layer Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-16 Jan-Kai Chang; Ding-Lun Lin; Jin-Bin Yang; You-Wei Yang; Wei-Shiuan Tseng; Mei-Hsin Chen
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Reliability Investigations of a Sensor System Embedded into Printed Circuits Boards Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-12 Kamil Janeczek; Aneta Araźna; Wojciech Stęplewski; Marek Kościelski; Krzysztof Lipiec; Dorota Liszewska; Anna Sitek
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Charge Transport Mechanism and Trap Origin in Methyl‐Terminated Organosilicate Glass Low‐κ Dielectrics Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-11 Timofey V. Perevalov; Andrei A. Gismatulin; Andrei E. Dolbak; Vladimir A. Gritsenko; Elena S. Trofimova; Vladimir A. Pustovarov; Dmitry S. Seregin; Konstantin A. Vorotilov; Mikhail R. Baklanov
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Growth and Characterization of GaN/AlN Resonant Tunneling Diodes for High‐Performance Nonvolatile Memory Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-03 Masanori Nagase; Tokio Takahashi; Mitsuaki Shimizu
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Ring‐Like Defect Formation in N‐Type Czochralski‐Grown Silicon Wafers during Thermal Donor Formation Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-03 Rabin Basnet; Hang Sio; Manjula Siriwardhana; Fiacre E. Rougieux; Daniel Macdonald
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The Significant Effect of Carbon and Oxygen Contaminants at Pd/p‐GaN Interface on Its Ohmic Contact Characteristics Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-11 Zhengcheng Li; Rong Huang; Xiao Chen; Hu Wang; Boyuan Feng; Gaohang He; Zengli Huang; Fangsen Li; Jianping Liu; Liqun Zhang; Tong Liu; Sunan Ding
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Effect of Zr Addition on Threshold Switching Characteristics of Amorphous Ga2Te3 Thin Films Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-18 Dayoon Lee; Taeho Kim; Jaeyeon Kim; Hyunchul Sohn
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Effect of Zr Addition on Threshold Switching Characteristics of Amorphous Ga2Te3 Thin Films Phys. Status Solidi A (IF 1.759) Pub Date : 2020-10-23 Dayoon Lee; Taeho Kim; Jaeyeon Kim; Hyunchul Sohn
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Intense Anti‐Stokes Emission from Erbium Ions in Gallium Lanthanum Sulphide–Oxide Glass in the Visible Spectral Range Phys. Status Solidi A (IF 1.759) Pub Date : 2020-10-21 Michail M. Voronov; Alexander B. Pevtsov; Alexander P. Skvortsov; Cyril Koughia; Chris Craig; Dan W. Hewak; Safa Kasap; Valery G. Golubev
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Study of Dislocations in Homoepitaxially and Heteroepitaxially Grown AlN Layers Phys. Status Solidi A (IF 1.759) Pub Date : 2020-10-16 Ken Goto; Nao Takekawa; Toru Nagashima; Reo Yamamoto; Galia Pozina; Rafael Dalmau; Raoul Schlesser; Ramón Collazo; Bo Monemar; Zlatko Sitar; Michał Boćkowski; Yoshinao Kumagai
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Laser Ablation and Ni/Cu Plating Approach for Tunnel Oxide Passivated Contacts Solar Cells with Variate Polysilicon Layer Thickness: Gains and Possibilities in Comparison to Screen Printing Phys. Status Solidi A (IF 1.759) Pub Date : 2020-10-21 Varun Arya; Bernd Steinhauser; Benjamin Gruebel; Christian Schmiga; Norbert Bay; Damian Brunner; Michael Passig; Andreas A. Brand; Sven Kluska; Jan Nekarda
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Sputtering Power and Annealing Effects on the Properties of Zn2SnO4–SnO2 Composite Thin Film for Pungent Smelling Gas (NH3) Detection Phys. Status Solidi A (IF 1.759) Pub Date : 2020-10-20 Sreekrishnan Rajammal Cynthia; R. Sivakumar; C. Sanjeeviraja; Chandrasekaran Gopalakrishnan; Karuppasamy Jeyadheepan
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Preparation of Bi‐Doped ZnO Thin Film over Optical Fiber and Their Application as Detection of Ethylenediamine in an Aqueous Medium Based on the Evanescent Field Technique Phys. Status Solidi A (IF 1.759) Pub Date : 2020-11-10 Shailendra Kr. Singh; Uttam Kr. Samanta; Anirban Dhar; Mrinmay Pal; Mukul Chandra Paul
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Energy Storage Properties of Mn and Y Codoped Ba0.67Sr0.33TiO3 Ceramics Phys. Status Solidi A (IF 1.759) Pub Date : 2020-11-21 Hua Qiang; Shiwen Fu; Zunping Xu
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Improving CdTe‐Based Thin‐Film Solar Cell Efficiency with the Oxygenated CdSe Layer Prepared by Sputtering Process Phys. Status Solidi A (IF 1.759) Pub Date : 2020-11-13 Anhong Hu; Jie Zhou; Xinyuan Qin; Yuxia Jiang; Peng Zhou; Penggeng Zhong; Shunwei Tang; Xuanzhi Wu; Deren Yang
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Nd3+‐Doped Lead Boro Selenate Glass: A New Efficient System for Near‐Infrared 1.06 μm Laser Emission Phys. Status Solidi A (IF 1.759) Pub Date : 2020-10-24 Pathuri Naresh; Marek Kostrzewa; Mikhail G. Brik; Annapureddy Siva Sesha Reddy; Nutakki Krishna Mohan; Vandana Ravi Kumar; Michal Piasecki; Nalluri Veeraiah
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Characterization of Ultrathin Fully Depleted Silicon‐on‐Insulator Devices Using Subthreshold Slope Method Phys. Status Solidi A (IF 1.759) Pub Date : 2020-11-06 Teimuraz Mchedlidze; Elke Erben
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Optimally Distributed Transport Properties Can Produce Highest Performance Thermoelectric Systems Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-09 Lon E. Bell
Phys. Status Solidi A 2019, 216, 1900562 DOI: 10.1002/pssa.201900562 In the originally published article, Equations (6-6)–(10), (13), (19), (20), (26) and some Equations in Table 1 and 2 were incorrect. The correct Equations and Tables can be found below. The author apologizes for any inconvenience this may have caused. Z ( x ) T ( x ) = Constant = S 2 ( x ) T ( x ) λ ( x ) ρ ( x ) = S 2 ( x ) T C
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Investigation of Field‐Effect Passivation Created by Hydrogen Plasma Etching of Radio Corporation of America Formed Chemical Oxides on Crystalline Silicon Wafers Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-09 Haitian Jia; Muzhi Tang; Jia Ge
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Phase Diagram of In–Pb Alloy in Condensed Films Phys. Status Solidi A (IF 1.759) Pub Date : 2020-11-23 Sergei V. Dukarov; Sergei I. Petrushenko; Alexander L. Samsonik; Vladimir N. Sukhov
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Investigation of β‐Ga2O3 Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy Phys. Status Solidi A (IF 1.759) Pub Date : 2020-11-26 Boyuan Feng; Zhengcheng Li; Feiyu Cheng; Leilei Xu; Tong Liu; Zengli Huang; Fangsen Li; Jiagui Feng; Xiao Chen; Ying Wu; Gaohang He; Sunan Ding
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Unique Thermoelectric Properties Induced by Intrinsic Nanostructuring in a Polycrystalline Thin‐Film Two‐Dimensional Metal–Organic Framework, Copper Benzenehexathiol Phys. Status Solidi A (IF 1.759) Pub Date : 2020-12-04 Ryuichi Tsuchikawa; Neda Lotfizadeh; Nabajit Lahiri; Shuwan Liu; Mackenzie Lach; Celine Slam; Janis Louie; Vikram V. Deshpande
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Alexander A. Kaminskii Phys. Status Solidi A (IF 1.759) Pub Date : 2020-10-28 Alexander A. Kaminskii
Professor Alexander A. Kaminskii, known for his highly influential publications and books on laser crystals and related materials, passed away on 29 October 2019, shortly after publishing his last papers in the same year. Alexander A. Kaminskii was born in Moscow, USSR, on 23 October 1934. The family went to Kazan, which is located on the banks of the Volga River, and young Alexander entered Kazan
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A Quantitative Analysis of the Research Trends in Perovskite Solar Cells in 2009–2019 Phys. Status Solidi A (IF 1.759) Pub Date : 2020-10-09 Ali Sephar Shikoh; Alexander Polyakov
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Laser Recording in Chalcogenide Glass Films: Driving Forces and Kinetics of the Mass Transfer Phys. Status Solidi A (IF 1.759) Pub Date : 2020-10-14 Yuri S. Kaganovskii; Hadar Genish; Michael Rosenbluh
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Construction of Dual‐Mesoporous Carbon Fibers Via Coassembly for Supercapacitors Phys. Status Solidi A (IF 1.759) Pub Date : 2020-10-20 Juan Du; Haijun Lv; Yifeng Yu; Aibing Chen
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Optimized Absorption Performance of FeSiCr Nanoparticles by Changing the Shape Anisotropy Phys. Status Solidi A (IF 1.759) Pub Date : 2020-10-09 Yang Chen; Lei Wang; Houdong Xiong; Sajjad Ur Rehman; Qiulan Tan; Qingfang Huang; Zhenchen Zhong
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Enhancement of Thermoelectric Figure of Merit of p‐Type Nb0.9Ti0.1FeSb Half‐Heusler Compound by Nanostructuring Phys. Status Solidi A (IF 1.759) Pub Date : 2020-09-29 Wanthana Silpawilawan; Sora-at Tanuslip; Yuji Ohishi; Hiroaki Muta; Ken Kurosaki
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Unique Thermoelectric Properties Induced by Intrinsic Nanostructuring in a Polycrystalline Thin‐Film Two‐Dimensional Metal–Organic Framework, Copper Benzenehexathiol Phys. Status Solidi A (IF 1.759) Pub Date : 2020-10-21 Ryuichi Tsuchikawa; Neda Lotfizadeh; Nabajit Lahiri; Shuwan Liu; Mackenzie Lach; Celine Slam; Janis Louie; Vikram V. Deshpande
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Enhancing the Diode Characteristics of Pulsed Laser–Deposited n‐MgxZn1−xO/p‐Si Heterojunction: Role of Oxygen Ambient Pressure Phys. Status Solidi A (IF 1.759) Pub Date : 2020-10-27 Shantanu Kaushik Chetia; Amit Kumar Das; Rohini Shreedharan Ajimsha; Vikas Kumar Sahu; Pankaj Misra