An exotic series of glasses with the composition 39PbO—(60‐x)B2O3‐xSeO2:1.0 Nd2O3 (10 ≤ x ≤ 50) were prepared and characterized by XRD, SEM, EDS techniques. Results of IR, Raman and XPS studies revealed that the glass network comprises of quarantined selenite [SeO3]2−groups (that act as modifiers) and [SeO4]2− selenate groups in addition to BO3 and BO4 units. With the increase of SeO2 content, the

A cross‐point array structure is a promising structure in high‐density memory applications. However, a cross‐point array has sneak current paths from selected cells to neighboring unselected cells and a selector device is required to suppress the sneak current issue. Therefore, the capability of modulating the threshold voltage is one of the essential elements facilitating reliable operation of the

Nano‐scaled resistive artificial synaptic devices are emerging as the next‐generation neuromorphic hardware building blocks owing to their high density, low power consumption, fast switching speed, and multilevel capability. However, critical drawbacks concerning the low switching ratio and non‐linearity behavior remain in realizing artificial neuromorphic hardware. In this study, we successfully obtained

TiO2 has received intense attention for optoelectronic applications due to its excellent properties such as non‐toxicity, low cost, and simple preparation. In this study, the influence of Li doping both on the structural and optical characteristics of TiO2 thin films and on optoelectronic properties of TiO2 based photodiodes have been investigated. The root‐mean‐square (RMS) roughness values obtained

In this paper, an alternative approach of metallization on TOPCon devices, through the method of localized laser ablation and nickel‐copper plating is presented. The method is demonstrated to be a viable and effective alternative, yielding better performance and results than the conventional screen‐printed contacts. The laser ablation process, with lower increase in recombination current as compared

Photoluminescence spectra have been investigated in erbium‐doped GaLaS(O) glasses. Under optical pumping by a semiconductor laser diode operating at 808 nm, the samples demonstrate intense “green” emission bands centered at around 525 and 550 nm as well as much weaker “red” emission band centered at around 664 nm. The intensities of “green” and “red” emission bands are investigated as a function of

For the production of nitride‐based optical and power devices, it is known that MOCVD (metal organics chemical vapor deposition) is an industrial method which is used worldwide. However, MOCVD has disadvantages as follows: (1) a lot of ammonia gas is consumed because the V/III ratio is several thousand and its cost prevails nearly the half of the production cost; (2) the sublimation of GaN is not negligible

Electrically conductive two‐dimensional (2D) metal‐organic frameworks (MOFs) have emerged as good candidates for thermoelectric applications owing to their high electrical and low thermal conductivities. This work studies the microscopic origin of the thermoelectric properties of copper benzenehexathiol (Cu‐BHT), a highly electrically conductive 2D MOF. 2D MOFs usually have polycrystalline domains

A 300 MeV electron linac, one of the large university accelerators at that time in Japan, was constructed in 1967 at Tohoku University for advanced research on nuclear physics, radiochemistry and neutron science. The first pulsed‐neutron experiment was conducted immediately after completion of accelerator facility. A very high beam repetition rate of 300 pps was employed to achieve an average beam

The feasibility of titanium oxide (TiOx) encapsulation of the source/drain metal contacts of diamond solution‐gate field‐effect transistor (SGFET) for biosensor applications has been explored. The SGFETs fabricated by this method show excellent FET characteristics. For comparison, the electrical characteristics performance of SGFET TiOx encapsulated devices with two different channel lengths of 100

Diamond powders with high hydrophobicity were prepared by etching graphite plates using a hydrogen/argon (H2/Ar) plasma. The morphology and size of the diamond powders were found to vary with the proportion of Ar in H2 from 0 to 50%. Wettability was measured using water contact angle (WCA) measurements giving values between 129.7° and 146.9°. The high hydrophobicity can be ascribed to the aggregated

Mesoporous carbon fiber has shown great application prospects in the field of electrochemical energy storage due to their large specific surface area, large draw ratio, fast electron transfer ability and good cycle stability. Herein, the dual‐mesoporous carbon fibers (DMCF) is prepared via a co‐assembly process with phenolic resin oligomers as carbon precursors, sodium silicate (silica precursor) as

A sputtering target of Zn2SnO4‐SnO2 composite was prepared by mixing ZnO and SnO2 powder in the ratio of 1:1. Thin films of Zn2SnO4‐SnO2 composite were prepared by radio frequency (RF) magnetron sputtering on quartz glass substrate for the first time with the sputtering power of 50 W, 100 W and 150 W. The prepared films were further annealed at 500 oC and 1000 oC. The crystalline nature of the films

An alternative approach to simulate the power conversion efficiency (ηPCE) of bulk heterojunction organic solar cells (BHJ OSCs), as a product of efficiencies of absorption (ηabs), dissociation (ηdis) and extraction (ηext), is presented. Although ηabs and ηdis do not directly contribute to simulation of ηPCE, the approach enables us in understanding their roles in optimising the power conversion efficiency

The origin of unintentional hydrogen incorporation in ZnO films grown by thermal Atomic Layer Deposition is investigated by comparing layers deposited using H2O and D2O as oxygen precursor. Secondary Ion Mass Spectroscopy measurements of as grown and 800 oC annealed layers provide evidence that the hydrogen contribution originating from the oxygen precursor is weakly chemically bound and can be mostly

Direct heteroepitaxy and selective area growth (SAG) of GaP and GaAs on Si(100) and Si(111) are implemented by low‐pressure hydride vapor phase epitaxy (LP‐HVPE), which are facilitated by buffer layers grown at 410‐490 °C with reactive gas mixing directly above Si substrates. High density islands observed on GaP buffer layers on Si result in rough morphology and defect formation in the subsequent GaP

Dislocation densities in AlN layers grown on c‐plane sapphire and physical vapor transport‐grown AlN (PVT‐AlN) (0001) substrates, by metalorganic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE), respectively, were evaluated from the density of etch pits formed in NaOH/KOH eutectic heated to 450 °C. In the heteroepitaxial layers grown by MOVPE on the sapphire substrates, etch pits

Black phosphorus (BP), a new elemental two dimensional (2D) material, is a suitable candidate for broadband photodetection from the visible to the infrared range of the spectrum because of its tunable band gap and high carrier mobility.

GaAs‐(111)‐nanostructures exhibiting second harmonic generation are new building blocks in nonlinear optics. Such structures can be fabricated through epitaxial lift‐off employing selective etching of Al‐containing layers and subsequent transfer to glass substrates. In this article, the selective etching of (111)B‐oriented AlxGa1‐xAs sacrificial layers (10 nm to 50 nm thick) with different aluminum

We demonstrate precision recording of indented dots and lines in As10Se90 and As2S3 chalcogenide glass films by a focused cw laser beam (λ = 532 nm) and study the kinetics and mechanisms of mass transfer under illumination. Due to inhomogeneous intensity distribution and local heating of the film at the focal point, the beam at rest produces an indentation whose depth increases with time and laser

FeSiCr nanoparticles were prepared by plasma arc discharge and ball milling processes. After ball milling, the surface area and sizes of the FeSiCr nanoparticles become larger, and most of the nanoparticles become uneven. The increasing surface area and sizes of nanoparticles, contribute to the electrical conductivity, enhance the space charge polarization between metal ions, and increase the shape