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Evaluation of a stacked‐FET cell for high‐frequency applications Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-03-23 Anna Piacibello, Ferdinando Costanzo, Rocco Giofré, Roberto Quaglia, Paolo Colantonio, Marco Pirola, Vittorio Camarchia
This paper presents the design, electromagnetic simulation strategies and experimental characterisation of a two‐stage stacked‐FET cell in a 100 nm GaN on Si technology around 18.8 GHz, suited for Ka band satellite downlink applications. A good agreement is found between the electromagnetic simulations and the measured performance on the manufactured prototype, thus demonstrating that a successful
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Half‐cascaded multilevel inverter coupled to photovoltaic power source for AC‐voltage synthesizer of dynamic voltage restorer to enhance voltage quality Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-03-21 Ali Darvish Falehi
Due to significant growth of the industrial companies and domestic electricity consumers along with appearance of the sensitive electrical and electronic equipment, the proper standard services have been more requested to provide high‐quality electrical energy. Dynamic voltage restorer (DVR) is a custom power electronic which is located in series with sensitive load and grid to mitigate the voltage
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FW‐EM‐based approach for scalable small‐signal modeling of GaN HEMT with consideration of temperature‐dependent resistances Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-03-17 Xianli Tang, Taojun Yang, Yonghao Jia, Yuehang Xu
In this paper, the full‐wave electromagnetic (FW‐EM) simulation approach for scalable small‐signal modeling of the GaN HEMT device is proposed. The scalable rules are deduced from the extracted parasitic parameters, which is according to a step‐by‐step parameter extraction method. Moreover, the accuracy is enhanced by considering the temperature‐dependent resistance (TDR) Rs and Rd, which are calculated
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Accelerated parameter tuning of antenna structures using inverse and feature‐based forward kriging surrogates Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-03-16 Slawomir Koziel, Anna Pietrenko‐Dabrowska, Muath Al‐Hasan
Tuning of geometry parameters is one of the essential stages of contemporary antenna design. It is necessary because available design methods, whether based on theoretical considerations or on engineering experience, are only capable of yielding initial designs that need further adjustment in order to boost the performance parameters as much as possible. Numerical optimization is also imperative for
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Heterodielectric oxide‐engineered single‐lateral pocket‐based gated source TFET Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-03-15 Ashita, Sajad A. Loan, Hend I. Alkhammash, Mohammad Rafat
In this work, we propose and investigate a new pocket‐based Si0.55Ge0.45/Si gate normal tunnel FET design employing a gate over source with a single lateral pocket (GSLP) with and without a heterogeneous dielectric (HD) gate oxide. Miller capacitance is significantly reduced with the GSLP design, which is further improved by the HD gate oxide leading to full overshoot/undershoot suppression capability
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Characterization of subsurface cracks in eddy current testing using machine learning methods Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-03-10 Fatima Barrarat, Karim Rayane, Bachir Helifa, Ibn Khaldoun Lefkaier
The exploitation of nondestructive eddy current testing (NDT‐EC) has become a capital necessity. Therefore, the development of a fast tool for the eddy‐current signal inversion is necessary. This paper proposes an inversion of signals coming from the NDT‐EC sensor response using machine learning methods, to reconstruct the length and depth of the defect and obtain its geometric characterization by
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Design of a multi‐octave power amplifier using broadband load‐pull X‐parameters Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-03-10 Meilin Wu, Jialin Cai, Justin King, Shichang Chen, Jiangtao Su, Wenhui Cao
The design of a multi‐octave power amplifier (PA) based on a broadband load‐pull X‐parameter model is described for the first time in this work. A 10‐W GaN package transistor is employed for model X‐parameter model extraction. Once the model is extracted, it is compared with the equivalent circuit model provided from the device manufacturer, and it is found that the X‐parameter model accuracy is comparable
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A scalable electrothermal model using a three‐dimensional thermal analysis model for GaN‐on‐diamond high‐electron‐mobility transistors Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-02-25 Youda Li, Shuman Mao, Yu Fu, Ruiming Xu, Bo Yan, Yong Zhang, Yuehang Xu
A scalable eletrothermal model is necessary for a high‐power amplifier design for accurate accounting of thermal effects. Toward this end, this study presents a scalable large‐signal model of gallium‐nitride (GaN) high‐electron‐mobility transistors (HEMTs) on diamond substrates. First, a three‐dimensional (3D) thermal analysis model was established. Then, a modified eletrothemal expression was proposed
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An ultra‐low‐power CNFET‐based improved Schmitt trigger design for VLSI sensor applications Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-02-22 Abhay Sanjay Vidhyadharan, Sanjay Vidhyadharan
To enable easy integration of Internet of Things (IoT) sensors with digital very large scale integrtaion (VLSI) circuits, the interface circuits need to operate efficiently even at low power supply voltages, consuming minimum power from the limited onboard supply source. Schmitt triggers have higher noise margins and lower delays as compared to conventional static CMOS logic circuits, at low‐voltage
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Delay optimization using repeater insertion in folded graphene nanoribbon interconnect systems Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-02-19 Debaprasad Das
In this paper, we have investigated the delay optimization using repeater insertion in folded graphene nanoribbon (FGNR) interconnect systems for different nanometer technology nodes. The mean free path is modeled as a function of GNR width and Fermi energy. The RLC equivalent circuit is modeled for analyzing delay and power for global interconnects. The performance of FGNR is compared to that of multi‐layer
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Measurement‐based analysis of GaAs HEMT technologies: Multilayer D‐H pseudomorphic HEMT versus conventional S‐H HEMT Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-02-18 Mohammad A. Alim, Mayahsa M. Ali, Giovanni Crupi
The key objective of this study is to check out the performance of two multilayer processed double‐heterojunction pHEMTs with different gate width as well as one conventional single‐heterojunction HEMT. Different types of investigation have been undertaken by means of on‐wafer DC, small‐signal, and nonlinear two‐tone measurements. The modeling of the DC output characteristics was successfully accomplished
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Two‐dimensional simulation studies of the breakdown voltage of a p channel LDMOS Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-02-14 Roji Marjorie Sunder Singh, Lal Kishore Kondepudi, Ananta Govindacharyulu Paravastu
This paper deals with the breakdown voltage studies on a new lateral diffusion p‐channel MOSFET(LDMOS) and development of an optimal structure based on the breakdown voltage and on‐state resistance. In this new structure, the channel region (n‐body) and the lightly doped drain (LDD) structure were formed by a self‐aligned process. This approach leads to the saving of one mask level during fabrication
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DC and transient models of the MSET device Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-02-11 Assaf Peled, Ofer Amrani, Yossi Rosenwaks
As a multigate device, the multiple‐state electrostatically formed nanowire transistor (MSET) exhibits a rather complex characteristic on account of the coupling between each of its two adjacent terminals. The MSET has shown promise across a steadily growing range of applications and integrated circuit components. However, an analytical model of the MSET has not been formulated. The objective of this
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Three‐phase adaptive differential evolution for antenna array synthesis Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-02-11 Zhen Zhang, Fan Jiang, Hongcai Chen, Qingsha S. Cheng
Antenna array synthesis is a complex nonlinear optimization problem. Differential evolution (DE) is an efficient method to solve the problem of antenna array synthesis. Different mutation strategies applied in different evolutionary phases can improve the search ability of DE. In this paper, a three‐phase adaptive differential evolution (TADE) algorithm is proposed for antenna array synthesis problems
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Four‐stage CMOS amplifier design based on symbolic calculations: Stack comparison approach Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-02-10 Ghavam Bahadoran, Hamidreza Reza‐Alikhani
This paper presents a simple simplification method to design a multistage amplifier. The simplification procedure is based on a defined criterion which mainly related to ignoring negligible terms. In order to verify the validity and accuracy of the exploited method, a complex four‐stage CMOS amplifier is considered. Simplified transfer function and circuit simulator output are compared. According to
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Multi‐coil electromagnets: An accurate magnetic equivalent circuit, cost, and energy management Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-02-08 Ali Hashemi, Parsa Yazdanpanah Qaraei
Using nonintegrated multiple coils in an electromagnet is a way to manage energy and reduce maintenance costs. In order to model and analyze the lifting force and the magnetic field in different zone of the electromagnet, an exact magnetic equivalent circuit (MEC) is required. In this paper, an accurate MEC to analyze dual‐coil electromagnets is presented. MATLAB and ANSYS MAXWELL software are used
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An accurate edge‐based FEM for electromagnetic analysis with its applications to multiscale structures Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-02-03 Yangfan Zhang, Pengfei Wang, Wenping Li, Shunchuan Yang
This paper introduces an accurate edge‐based smoothed finite element method (ES‐FEM) for electromagnetic analysis for both two‐dimensional cylindrical and three‐dimensional Cartesian systems, which shows much better performance in terms of accuracy and numerical stability for mesh distortion compared with the traditional FEM. Unlike the traditional FEM, the computational domain in ES‐FEM is divided
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Automated adaptive TFSF method for solving time domain Maxwell's equations Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-02-03 Vaibhav Shah, Anandhanarayanan Karuppanasamy, Avijit Chatterjee
The total field–scattered field (TFSF) formulation is quite popular for solving Maxwell's equations in finite difference time domain (FDTD) and finite volume time domain (FVTD) methods. Here a fixed TFSF interface around the scattering body is employed to separate the total field (TF) cells and scattered field (SF) cells. This interface is selected based on experience as it is assigned prior to the
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Fast analysis of scattering from metallic‐dielectric composite large antenna arrays using characteristic modes Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-01-28 Wenyang Zhou, Yikai Chen, Shiwen Yang
In this article, characteristic modes for metallic‐dielectric composite structures (MDCS) are explored for fast and accurate analysis of scattering from large antenna arrays. Specifically, a generalized eigenvalue equation is formulated from a method of moments (MoM) impedance matrix of the electric field integral equation and Poggio, Miller, Chang, Harrington, Wu, and Tsai formulation. Modal currents
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Vivaldi dipole nano‐rectenna for IR energy harvesting at 28.3 THz Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-12-01 Wided Amara, Ali Yahyaoui, Nermeen Eltresy, Mohammed Aseeri, Bandar Hakim, Yusuf Al‐Turki, Hatem Rmili
A Vivaldi dipole rectenna system for infrared (IR) energy harvesting is investigated. First, a parametric study on the Vivaldi dipole antenna is performed to collect the maximum electric field between the Vivaldi poles. The antenna arms were optimized to achieve a high‐efficiency rectenna system. The two arms of the antenna were formed using two different metals, that is, gold and titanium. These two
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Textile‐integrated microwave components based on artificial magnetic conductor Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-01-25 Martin Kokolia, Zbynek Raida
In the paper, we introduce a textile‐integrated waveguide (TIW) based on a novel artificial magnetic conductor (AMC), which consists of hexagonal elements. Thanks to the hexagonal shape of AMC elements, general TIW components (power‐dividers, waveguide bends, etc.) can be simply created. Since AMC replaces side walls of TIW, complicated manufacturing of vias can be eliminated. Due to the complex geometry
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Terahertz compressive imaging: understanding and improvement by a better strategy for data selection Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-01-24 Chungui Xing, Feng Qi, Zhaoyang Liu, Yelong Wang, Shuxu Guo
Compressive sensing (CS) is a novel sampling modality, which indicates the signals can be sampled at a rate much below the Nyquist sampling rate. CS has increasing interest recently due to high demand of rapid, efficient, and in‐expensive signal processing applications in the μmWave and mmWave frequencies, such as communication and imaging. There have been a lot of theoretical studies on this topic
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From model to low noise amplifier monolithic microwave integrated circuit: 0.03–2.6 GHz plastic quad‐flat no‐leads packaged Gallium‐Nitride low noise amplifier monolithic microwave integrated circuit Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-01-19 Sinan Osmanoglu, Ekmel Ozbay
This paper describes an air cavity quad‐flat no‐leads (QFN) over‐molded plastic packaged cascode broadband GaN LNA Monolithic Microwave Integrated Circuit (MMIC) with resistive feedback fabricated with 0.25 μm GaN HEMT technology. The single stage QFN packaged GaN LNA MMIC achieves a bandwidth of 0.03–2.6 GHz with a typical gain of 11.5 dB and less than 1.5 dB noise figure. The low noise amplifier
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Impact of negative bias temperature instability on single event transients in scaled logic circuits Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-01-17 Ambika Prasad Shah, Michael Waltl
Altering the performance of single transistors and integrated circuits at nominal operating conditions over time, as well as soft errors, are serious reliability issues for integrated CMOS circuits, especially when used in space applications. In principle, the effect of soft errors becomes even more critical if the circuit performance degrades over time. To address this detrimental behavior, the impact
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A novel design of surface acoustic wave‐based chipless radio frequency identification tag based on multiphysics modeling Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-01-17 Li Zhang, Hao Hui Su, Mei Song Tong
Radio frequency identification (RFID) technique is a kind of wireless, automatic identification technology that is being widely used. Compared to other identification methods such as bar code and two‐dimensional code (quick response code or QR code), the RFID technique has several remarkable merits, such as long reading distance, strong penetrating ability, pollution resistance, high reading efficiency
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Trust and energy aware routing algorithm for Internet of Things networks Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-01-12 Shaik Mohammed Mujeeb, Rachapudy Praveen Sam, Kasa Madhavi
The expansion in the Internet of Things (IoT) has led to a shift towards smart technologies. IoT focuses on integrating networks to facilitate smooth services to humans. The interface between the mobility patterns and the routing protocols is considered to increase the performance of the network. However, incorporating security in the IoT network has been a major issue that continues to nurture with
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Numeric‐analytical solution of an LC circuit with nonlinear capacitor based on the symplectic conservative perturbation method Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-01-12 Hongwei Yang, Yingying Wang, Yuqi Wang, Fandi Lv
The LC circuit with a nonlinear capacitor is analyzed using the symplectic conservative perturbation method based on the symplectic matrix. By treating the electric charge and the flux linkage as dual variables, the LC circuit system can be transformed into a Hamiltonian system. Then we solve the nonlinear Hamiltonian matrix equation by the perturbation method. The Hamiltonian matrix can be cast into
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The propagation characteristics of rectangular waveguides filled with inhomogeneous double‐negative dielectrics using a semianalytical method Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2021-01-05 Qianru Weng, Qian Lin, Haifeng Wu
In this paper, we carry out the calculation of eigenvalues including cutoff wavenumbers and propagation constants in rectangular waveguides filled with inhomogeneous double‐negative (DNG) dielectrics whose permittivity varies along one transverse direction by using a semianalytical approach. Eigenequations for waveguides containing arbitrary continuously or discontinuously varying dielectrics are formulated
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Low‐cost multi‐criteria design optimization of compact microwave passives using constrained surrogates and dimensionality reduction Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-12-29 Slawomir Koziel, Anna Pietrenko‐Dabrowska, Muath Al‐Hasan
Design of contemporary microwave circuits is a challenging task. Typically, it has to take into account several performance requirements and constraints. The design objectives are often conflicting and their simultaneous improvement may not be possible; instead, compromise solutions are to be sought. Representative examples are miniaturized microwave passives where reduction of the circuit size has
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Solving one‐dimensional nonlinear stochastic Sine‐Gordon equation with a new meshfree technique Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-12-23 Farshid Mirzaee, Shadi Rezaei, Nasrin Samadyar
In the current work, we consider the nonlinear one‐dimensional stochastic Sine‐Gordon equation with appropriate initial and boundary conditions. The main goal of this work is presenting a numerical scheme based on radial basis functions (RBFs) and finite difference method to provide the approximate solution of mentioned equation. For approximating the solution, finite difference idea is used to overcome
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A variable time‐step method for a space fractional diffusion moving boundary problem: An application to planar drug release devices Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-12-22 Morteza Garshasbi, Forough Sanaei
In this article, we consider an anomalous diffusion model in a planar polymeric matrix as a space fractional diffusion problem with moving boundary conditions. An iterative implicit finite difference method with variable time‐steps is established to solve the proposed problem. The stability and consistency of the numerical method are proved and the estimation of the numerical error is conducted. The
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Chebyshev polynomials for the numerical modeling of non‐uniform substrate integrated waveguides Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-12-20 Karima Rabaani, Maha Added, Noureddine Boulejfen, Ammar B. Kouki, Fadhel M. Ghannouchi
In this paper, a new method‐of‐moments‐based approach is proposed for the analysis of non‐uniform lossy substrate integrated waveguides (SIW) transmission lines. The approach incorporates Chebyshev expansion in the frequency domain to compute the scattering parameter matrix of the line. To validate the proposed approach of non‐uniform structures are analyzed where two of them have been fabricated and
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Sensitivity analysis and uncertainty estimation in small‐signal modeling for InP HBT (invited paper) Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-12-20 Ke‐Jing Cao, Ao Zhang, Jian‐Jun Gao
In this paper, a sensitivity analysis and uncertainty estimation of small‐signal model for InP HBT is presented. Analytical expressions for sensitivity are derived in terms of the measured S‐parameters based on the direct intrinsic parameters extraction. Furthermore, the uncertainties of the intrinsic parameters vs frequency are discussed to give more reliable extraction results. The optimal solutions
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Atom search sunflower optimization for trust‐based routing in internet of things Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-12-19 Pramod P. Jadhav, Shashank D. Joshi
Internet of Things (IoT) is a ubiquitous network that assists the system to monitor and organize the world by processing, collection, and analysis of produced data by IoT nodes. The IoT is susceptible to numerous attacks, wherein the sinkhole attack is the most destructive one, which affects the communication amongst network devices. The security of the IoT is affected due to the lack of dynamic network
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Security‐aware authorization and verification based data aggregation model for wireless sensor networks Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-12-07 S. Ninisha Nels, J. Amar Pratap Singh
In Wireless Sensor Network (WSN), the sensor nodes aggregate the environment and transmit the aggregated data to the Cluster Head (CH) or aggregator. Even though various data aggregation model is introduced, the resource‐constrained issues in WSN are complex to solve in the research community. Therefore, the authorization and verification‐based data aggregation model is proposed in this research to
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Exponential time differencing implementation of the stretched coordinate perfectly matched layer Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-12-02 Shou Jiang Huang, P. X. Wang
The exponential time differencing (ETD) formulation for the stretched coordinate perfectly matched layer (PML) is proposed through the Taylor expansion. This general D and B formulation can be used to truncate arbitrary media in the FDTD simulations. The numerical experiments validate the effectiveness of the ETD schemes. The computational efficiency of the ETD algorithm is identical to that of simple
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Quantum dot celluar automata‐based encoder and priority encoder circuits: Low latency and area efficient design Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-12-01 Aishwarya Kaity, Sangeeta Singh, Kabirul Hossain
The transistorless technology, quantum dot cellular automata (QCA) becomes one of the potential candidates of nanotechnology for signal processing circuits because of its ultra‐low power requirement, high frequency of operation, extreme‐low area requirement, and short channel effect (SCEs) immune at nanoscale circuits. Quasi‐adiabatic switching of QCA makes its data transfer faster. This work reports
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Electromagnetic port boundary conditions: Topological and variational perspective Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-30 Ralf Hiptmair, Jörg Ostrowski
We present a comprehensive and variational approach to the coupling of electromagnetic field models with circuit‐type models. That coupling relies on integral nonlocal quantities like voltage and current for electric ports, magnetomotive force, and magnetic flux for magnetic ports, and linked currents and fluxes for “tunnels” in the field domain. These quantities are closely linked to nonbounding cycles
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Efficient optimization of wideband reflector feed antennas for optimal receiving sensitivity Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-30 Fahmi Mokhupuki, Dirk I. L. de Villiers
Wideband reflector antenna feeds are a geometrically complex class of antennas, requiring a variety of design parameters to describe their form. This casts the optimization of such structures as a high‐dimensionality problem. The antenna responses are also difficult to predict and must be determined via computationally expensive full‐wave electromagnetic simulations. This paper proposes a surrogate‐based
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Element‐free Galerkin numerical mode‐matching method for static and time‐harmonic electromagnetic fields in orthogonal‐plano‐cylindrically layered media Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-25 Yueqin Dun, Shubin Zeng, Jiefu Chen
This paper combines the numerical mode‐matching (NMM) method with the element‐free Galerkin (EFG) method for the efficient modeling of electromagnetic waves in cylindrically layered media with multiple horizontal beds. In the implementation of the conventional NMM scheme, finite element method (FEM) is commonly used to discretize the radial direction. To improve the efficiency for the discretization
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An efficient electro‐thermo‐mechanical model for the analysis of V‐shaped thermal actuator connected with driven structures Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-25 Lin‐Feng Zhao, Zai‐Fa Zhou, Mu‐Zi Meng, Meng‐Jie Li, Qing‐An Huang
V‐shaped thermal actuators are popular in many types of microelectromechanical systems' (MEMS) devices. In the rapidly growing applications of V‐shaped thermal actuators, there are usually complex driven structures, in which the Joule heat may transfer, connecting to the V‐beams. However, their influence on the temperature distribution has not been included in existing analytical models. An electro‐thermo‐mechanical
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Quantile regression averaging‐based probabilistic forecasting of daily ambient temperature Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-24 Debesh S. Tripathy, B Rajanarayan Prusty
The inclusion of conductor temperature variations for numerous power system planning and operational studies has long been recognized in the literature. The conductor temperature is majorly affected by environmental factors such as the ambient temperature. An efficient forecasting technique for forecasting ambient temperature is the need of the hour to prevent unexpected hazards in power systems and
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Effectiveness of thermal redistribution layer in cooling of 3D ICs Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-24 Fengjuan Wang, Yue Li, Ningmei Yu, Yuan Yang
A cooling system composed of a thermal redistribution layer (TRDL) and a thermal through‐silicon via (TTSV) is proposed for three‐dimensional integrated circuits (3D ICs). According to the Fourier heat flow analysis theory, the heat flow model of the proposed cooling system is established and verified by finite element analysis (FEA). It is shown that the maximum error between the heat flow model and
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Electrical modeling of carbon nanotube‐based shielded through‐silicon vias for three‐dimensional integrated circuits Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-17 Qing‐Hao Hu, Wen‐Sheng Zhao, Kai Fu, Da‐Wei Wang, Gaofeng Wang
In this article, two kinds of shielded carbon nanotube (CNT) through‐silicon vias (TSV) are proposed and investigated for high‐density three‐dimensional integrated circuits (3‐D ICs). First, vertical aligned CNT array is inserted into a single hole, and two isolated metal pads, that is, the central circular and outer annular pads, are deposited onto the surface to make distinct conduction paths. The
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Physical parameter‐based data‐driven modeling of small signal parameters of a metal‐semiconductor field‐effect transistor Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-17 Gökhan Satılmış, Filiz Güneş, Peyman Mahouti
In this work, physical parameter‐based modeling of small signal parameters for a metal‐semiconductor field‐effect transistor (MESFET) has been carried out as continuous functions of drain voltage, gate voltage, frequency, and gate width. For this purpose, a device simulator has been used to generate a big dataset of which the physical device parameters included material type, doping concentration and
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Design of a compact, wideband, and flexible rhombic antenna using CMA for WBAN/WLAN and 5G applications Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-16 Bashar Bahaa Qas Elias, Ping Jack Soh, Azremi Abdullah Al‐Hadi, Guy A. E. Vandenbosch
The design of a compact, wideband flexible monopole antenna printed on a flexible Kapton polyimide substrate is presented. The proposed antenna consists of two rhombic elements embedded within a square plane as the radiating element. The wide bandwidth is aimed at alleviating potential performance degradations due to its application in an on‐body environment. The proposed antenna is designed using
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Robust tuning and sensitivity analysis of stochastic integer and fractional‐order PID control systems: application of surrogate‐based robust simulation‐optimization Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-18 Amir Parnianifard, Mourad Fakhfakh, Mouna Kotti, Ali Zemouche, Lunchakorn Wuttisittikulkij
This paper aims to make a trade‐off between performance and robustness in stochastic control systems with probabilistic uncertainties. For this purpose, we develop a surrogate‐based robust simulation‐optimization approach for robust tuning and analyzing the sensitivity of stochastic controllers. Kriging surrogate is combined with robust design optimization to construct a robust simulation‐optimization
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Modeling and performance analysis of folded graphene nanoribbon interconnect Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-16 Debaprasad Das
In this paper, we have modeled the folded graphene nanoribbon (FGNR) interconnect and analyzed the performance for nanometer technology nodes. The mean free path is modeled as a function of GNR width and Fermi energy. The RLC equivalent circuit is modeled further for analyzing delay and RF response. The performance of FGNR is compared to that of multi‐layer horizontal graphene nanoribbon (ML‐HGNR)
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Indirect optimal tuning rules for fractional order proportional integral derivative controller Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-15 Rishika Trivedi, Bharat Verma, Prabin K. Padhy
In this article, the tuning rules of fractional order PID controller are derived using Indirect Design Approach‐1. In Indirect Design Approach‐1, the plant is shifted in the frequency domain using the shifting parameter ψ. The tuning rules of stochastically optimized fractional order PID controllers exist in literature for the fixed values of maximum sensitivity. Maximum Sensitivity or robustness of
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An intelligent technique for optimal power quality reinforcement in a grid‐connected HRES system: EVORFA technique Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-15 B. Srikanth Goud, B. Loveswara Rao, Ch. Rami Reddy
This manuscript proposes the optimal power quality reinforcement in grid‐connected hybrid renewable energy sources like solar photovoltaic, wind turbine, battery storage using an intelligent approach. The proposed hybrid approach is the consolidation of Egyptian vulture optimization algorithm (EVOA) and random forest algorithm (RFA); hence, it is known as EVORFA technique. The major objective of this
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Numerical solution of Volterra‐Fredholm integral equation via hyperbolic basis functions Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-11 Hamid Esmaeili, Majid Rostami, Vahideh Hooshyarbakhsh
In this paper, a new method using hyperbolic basis functions is presented to solve second kind linear Volterra‐Fredholm integral equation. In other words, our method approximates the solution of a Volterra‐Fredholm integral equation by the hyperbolic basis functions, which produce block‐pulse functions. Hence, the new method reduces the linear Volterra‐Fredholm integral equation to a system of algebraic
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Optimal location and capacity of Unified Power Flow Controller based on chaotic krill herd blended runner root algorithm for dynamic stability improvement in power system Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-04 B. Vijay Kumar, G. Rajendar, Veerlapati Ramaiah
In this manuscript, the optimal location and capacity of Unified Power Flow Controller (UPFC) based on chaotic krill herd (CKH) with runner root algorithm (RRA) for dynamic stability improvement in power system is proposed. The proposed technique is the combined execution of CKH and RRA hence it is known as CKHRA technique. Here, CKH is utilized to optimal location of unified power flow controller
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An improved cuckoo search with reverse learning and invasive weed operators for suppressing sidelobe level of antenna arrays Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-03 Peng Lin, Aimin Wang, Lin Zhang, Jing Wu, Geng Sun, Lingling Liu, Lingfeng Lu
In order to overcome some shortcomings including the premature convergence and slow convergence speed at later evolution stage of conventional cuckoo search (CS) algorithm for the sidelobe suppressions of antenna arrays, an improved CS with reverse learning and invasive weed operators (ICSRLIWO) is proposed. First, ICSRLIWO algorithm generates reverse populations through opposition‐based learning method
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Modeling of metal distribution when coating flat metal plates in electroplating baths Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-03 Irina Yu. Pchelintseva, Alexander N. Pchelintsev, Yuriy V. Litovka
Electrolytic metal coating processes are used to protect products from corrosion, decorative surface finish and other purposes. Electroplated coating has an important quantitative characteristic, which is coating thickness. Since the electric field in the electrolyte is not uniform, the coating thickness at different points on the surface of detail is different. An important task here is to apply a
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A fast Broyden's approximation‐based weighted least square state estimation for power systems Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-02 Subramaniyan Shanmugapriya, Duraisamy Maharajan
State estimation (SE) serves as the heart of the energy management systems in providing online database by processing slow‐sampled supervisory control and data acquisition (SCADA) measurements. The recent development of fast sampled phasor measurement units (PMUs) provides real‐time measurements that enable tracking of the system state; however, the associated high initial cost does not allow to completely
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Pseudo Split Gate In0.53Ga0.47As/InP Hetero‐Junction Tunnel FET: Design and Analysis Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-11-02 Mohd Haris, Sajad A. Loan, Mainuddin
In this work, we present the design and simulation of a novel structure of In0.53Ga0.43As/InP based hetero junction tunnel field effect transistor (HTFET). The proposed HTFET employs two gates: the conventional main gate and a pseudo split gate (PSG) at the drain side. The PSG is placed at the top of the drain region with the same equivalent oxide thickness (EOT) and work function as that of the main
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A novel dual memristor hyperchaotic system and its application for secure communication based on three‐fold function projection synchronization Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-10-30 Xiaoyu An, Minghao Jiang, Wei Deng, Jie Fang
A novel simplest four‐dimensional hyperchaotic system with dual memristors is designed by using a charge‐controlled memristor and a generalized voltage‐controlled memristor. Based on the conventional dynamic analysis method and MATLAB simulation software, the dynamic characteristics of the dual memristor hyperchaotic system such as Lyapunov exponent spectrum, phase diagram, and bifurcation diagram
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Carbon nanotube field effect transistor (CNTFET) operational transconductance amplifier (OTA) based design of high frequency memristor emulator Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-10-26 Tabassum Khurshid, Syed Fatima, Farooq Ahmad Khanday, Faisal Bashir, Furqan Zahoor, Fawnizu Azmadi Hussin
The design and simulation of high frequency memristor emulator using carbon nanotube field effect transistor (CNTFET) based Operational Transconductance Amplifier (OTA) has been presented out in this paper. The proposed memristor emulator design consists of two CNTFET‐OTAs and one capacitor with both grounded and floating topologies available for applications. The proposed CNTFET memristor design emulator
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A new image restoration approach by combining empirical wavelet transform and total variation using chaotic squirrel search optimization Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-10-22 K. Praveen Kumar, C. Venkata Narasimhulu, K. Satya Prasad
Image noise is the random variation of brightness or color information in the images. Noise can enter the picture during capturing or transmitting. Different linear and nonlinear methods have been implemented to remove the noise from an image, but transformation of wavelets is becoming increasingly important. We propose a fundamental concept for disintegrating the input bubble, sound, and movement
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Editorial for the special issue on advances in forward and inverse surrogate modeling for high‐frequency design Int. J. Numer. Model. Electron. Netw. Devices Fields (IF 0.833) Pub Date : 2020-09-25 Slawomir Koziel, Anna Pietrenko‐Dabrowska
The design of modern‐day high‐frequency devices and circuits, including microwave/RF, antenna and photonic components, historically has relied on full‐wave electromagnetic (EM) simulation tools. Initially used for design verification, EM simulations are nowadays used in the design process itself, for example, for finding optimum values of geometry and/or material parameters of the structures of interest