Presents the table of contents for this issue of the publication.

Presents the table of contents for this issue of the publication.

The study of power converters operated at greatly increased switching frequencies compared to conventional practice poses rather unique and transverse challenges to the designer.

Advertisement.

Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.

Presents the table of contents for this issue of the publication.

Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.

The past years have seen a remarkable growth of inverter-based resources in power grids. Conventionally, the inverter-based resources are controlled as current sources, following the phase of grid voltage, with the assumption that the grid voltage is stiff or slightly affected by the current injected from the inverter. This operation mode is commonly known as the grid-following (GFL) or grid-feeding

Complex space vectors have for decades proven their usefulness for modeling, analysis, and control design in electric power engineering. One fundamental benefit is that they allow two variables—the d and q components of the vector—to be expressed in a single-input–single-output (SISO) notation. Symmetric three-phase systems and dynamic elements can be modeled using complex-coefficient transfer functions

Advertisement.

Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.

Presents the table of contents for this issue of the publication.

Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.

We Have witnessed that each generation of power devices triggered a renovation in power conversion in the past decades. Wide bandgap (WBG) power devices,as the new generation of power devices, will undoubtedly make great changes to today’s power conversion system. Actually, they are now establishing new benchmarks in various applications benefiting from their higher switching frequency,higher power

In order to enable medium-voltage applications at an operation voltage of 5-kV level, a novel 7.2-kV/60-A Austin SuperMOS SiC power switch is developed. Static and dynamic performances are characterized at various voltage and current levels. The device exhibits excellent dynamic performance with a high dV/dt up to 122 V/ns during the turn-off. The output charge of the Austin SuperMOS is also measured

This article reports the demonstration of a low-voltage (<; 600V) monolithically integrated 4H-silicon carbide (SiC) MOSFET and JBS diode (JBSFET). A singlemetal and thermal treatment process were implemented to form ohmic contacts on the n+ and p+ source regions while forming the Schottky contact on the N- SiC epitaxial layer. Different layout methodologies are discussed for fabricating an energy-efficient

Monolithic integration of power transistor and specific functional integrated circuits (power ICs) offers unique advantages for wide bandgap power devices. However, few publications have reported the power ICs based on SiC because of several challenging problems such as fabrication process and cost. This paper explores the monolithic integration possibility of 4H-SiC lateral small-signal bipolar junction

This article reports the Au-free GaN power integration platform and a complete integration scheme from devices to functional subcircuits and to application-oriented GaN converter ICs. The design and experimental demonstration of all-GaN dc-dc converter IC with high level of integration is presented. Through the developed GaN power integration platform, devices are monolithically integrated and functional

Various Si/SiC hybrid device concepts aim at achieving SiC performance at a significantly reduced cost in comparison to full SiC solutions. Both the insulated-gate bipolar transistor (IGBT)(Si)/Schottky(SiC) hybrid pair and the IGBT(Si)/MOSFET(SiC) hybrid switch offer a substantial reduction in switching losses but operate quite differently. This article compares the performance of these two hybrid

3C-silicon carbide (3C-SiC) Schottky barrier diodes (SBDs) on silicon (Si) substrates (3C-SiC-on-Si) have been found to suffer from excessive subthreshold current, despite the superior electrical properties of 3C-SiC. In turn, that is one of the factors deterring the commercialization of this technology. The forward current-voltage (I-V) characteristics in these devices carry considerable information

In order to evaluate the feasibility of newly developed gallium nitride (GaN) devices in a cryogenically cooled converter, this article characterizes a 650-V enhancement-mode GaN high-electron mobility transistor (GaN HEMT) at cryogenic temperatures. The characterization includes both static and dynamic behaviors. The results show that this GaN HEMT is an excellent device candidate to be applied in

Eliminating antiparallel silicon carbide Schottky barrier diode (SiC SBD) and making use of the intrinsic body diode of SiC metal-oxide-semiconductor-field-effect transistor (SiC MOSFET) offer a cost-effectiveness solution without obviously sacrificing the conversion efficiency in some power converter applications. Although the body diode of commercial SiC MOSFET has been qualified by several manufacturers

This article has presented a physics-based model which replicates the failure of SiC MOSFET under shortcircuit (SC) case. The model is constructed on the base of the traditional circuit model of SiC MOSFET by introducing two leakage current mechanisms; one is the leakage current between the drain and the source, and another is the gate leakage current. Furthermore, the carrier mobility characterized

Recently, a major challenge in the adoption of wide bandgap semiconductors for power electronic applications is the need to trade device performance for device safety. In this article, methods for predicting gate voltage overshoot in normally-OFF gallium nitride (GAN) high electron mobility transistors (HEMTs) are derived in order to deliver optimal device performance. Two models are proposed; a simple

Commercial enhancement-mode gallium nitride (GaN) HEMTs device is a superior candidate for high-frequency power electronics applications. However, GaN power devices have a unique dynamic R DS,ON problem which increases the conduction loss of the converter during operation. In this article, the temperature-dependent dynamic R DS,ON at high frequency is evaluated experimentally for the first time using

Gallium nitride (GaN) high-electron-mobility transistor (HEMT) has the advantages of high switching speed and low ON-resistance, which make it widely used in high-frequency applications to realize high power density. Triangular current mode (TCM) modulation has been used in GaN-based converters to simultaneously achieve high power density and high efficiency through full-range zero voltage switching

Wide bandgap (WBG) devices allow power factor correction (PFC) circuits to operate at megahertz (MHz), which improves power density. In low-power applications, critical conduction mode (CrM) boost PFC circuits are widely used due to its simple structure and minimized turn-on loss. Compared with the kilohertz (kHz) operation, MHz PFC in CrM yields larger inductor valley current during the zero voltage

SiC merged p-i-n Schottky (MPS) diodes have great potential in the construction of multiple power electronic circuits for their excellent static and dynamic characteristics. The ultrafast switching speed is unfortunately accompanied by undesirable parasitic oscillations, which have direct impact on the stability and reliability of these circuits. The wide use of SiC diodes is still limited by their

As the most popular wide bandgap (WBG) power device, the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has been widely adopted in the power electronics applications and brings in the benefits, including reduced switching losses, enhanced switching frequency, and improved power density. However, the switching oscillation and the electromagnetic interference (EMI) become

High-voltage (HV) generators with a wide load range are widely adopted for X-ray beam excitation and density adjustment. A SiC-based LCC HV inverter at high switching frequency will benefit fast transient because of the more efficient utilization of an X-ray beam and its smaller size. A precise prediction of SiC switching characteristics provides important prerequisites for efficiency, thermal and

This article presents the impact of repetitive shortcircuit (SC) tests on the normal operation of a commercial silicon carbide (SiC) MOSFET and the influence of different case temperatures on the SC degradation process. To ensure repeatable SC test conditions, the maximum SC withstanding time is studied at three different case temperatures and the critical energy is identified. To investigate the effect

This article focuses on the avalanche energy handing ability and theoretical demonstration of the avalanche failure mechanism for the SiC MOSFET by the unclamped inductive switching (UIS) test, the mathematical model, and the numerical simulation. Two evaluation methods are implemented to understand the effect of the avalanche current density and the avalanche energy on the device failure with the

Threshold voltage and channel mobility of a 1.2-kV planar-channel SiC MOSFET at high junction temperature (Ti) up to 700 °C have been extracted and analyzed for the first time, by virtue of a specially designed short-circuit (SC) measurement technique we developed. Under the SC condition, Ti of the SiC MOSFET can rise significantly within a few microseconds, which can be extracted based on the SC waveforms

SiC devices are promising for outperforming Si counterparts in high-frequency applications due to its superior material properties. Conventional wirebonded packaging scheme has been one of the most preferred package structures for power modules. However, the technique limits the performance of a SiC power module due to parasitic inductance and heat dissipation issues that are inherent with aluminum

Power module packaging technologies have been experiencing extensive changes as the novel silicon carbide (SiC) power devices with superior performance become commercially available. This article presents an overview of power module packaging technologies in this transition, with an emphasis on the challenges that current standard packaging face, requirements that future power module packaging needs

A host of high-voltage-capable electronic packaging approaches have emerged in recent years for usage in nextgeneration power electronics. In this article, the focus is on the challenge of managing the thermal characteristics in these cutting edge packaging options, where power densities are exceeding 25 kW/L. Utilizing wide bandgap semiconductors like SiC and GaN can help reduce the thermal inefficiencies

This article presents a measurement-based technique for estimating the parasitic inductances associated with the interconnection structures of a multichip power module (MCPM) at a finer granularity than has been previously demonstrated. The technique introduced here makes it possible to determine an estimate of the interconnect inductances at each individual die position within the module geometry

With growing interests in low-inductance silicon carbide (SiC)-based power module packaging, it is vital to focus on system-level design aspects to facilitate easy integration of the modules and reap system-level benefits. To effectively utilize the low-inductance modules, busbar and interconnects should also be designed with low stray inductances. A holistic investigation of the flux path and flux

Increased switching speeds of wide bandgap (WBG) semiconductors result in a significant magnitude of the displacement currents through power module parasitic capacitances that are inherent in packaging design. This is of increasing concern, particularly in case of newly emerging medium-voltage (MV) SiC MOSFETs since the magnitude of the displacement currents can be several order higher due to the fast

SiC-based wide bandgap semiconductor devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs) are gradually replacing Si devices in industrial applications because of their excellent electrothermal properties. However, the reliability of these devices and the problem of the junction temperature estimation are concerns that are yet to be resolved for these applications. This article

This article presents the utilization of DPWM for the online condition monitoring of SiC power MOSFET switching at high switching frequencies in a three-phase inverter prototype. Due to the settling time imposed by the monitoring system, accurate measurements require low switching frequency and high modulation indexes when monitoring. To overcome these limitations, a DPWM strategy is proposed. This

To obtain the online ON-state resistance (R dson ) of the SiC power MOSFET, during its operation in the dc solid-state-power controller (dc-SSPC), the drain current (I d ) and the ON-state voltage (V dson ) need to be accurately measured in real time. Compared to that of I d , the measurement of V dson needs to solve more problems, i.e., the high accuracy, the influence of the operating temperature

In addition to higher blocking voltages of wide bandgap (WBG) power modules, their volume has been targeted to be several times smaller than that of Si-based modules. This translates into higher electric stress within the module and, in turn, a higher risk for unacceptable partial discharge (PD) activities, leading to aging and degradation of both the ceramic substrate and the silicone gel. Due to

Silicon carbide (SiC) devices have the advantage of high switching speed. However, the switching speed is limited by the high parasitic inductance which could cause high voltage overshoot, parasitic turn-on, oscillation, and electromagnetic interference (EMI) issues. Thus, the parasitic inductance of the SiC power module has to be reduced for better performance. This paper proposed an integrated half-bridge

In this article, a novel fan-out panel-level printed circuit board (PCB)-embedded package for phase-leg silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power module is presented. Electro-thermomechanical co-design was conducted, and the maximum package parasitic inductance was found to be about 1.24 nH at 100 kHz. Compared with wire-bonded packages, the parasitic inductances

Wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV have the potential to revolutionize medium- and high-voltage systems due to their high-speed switching and lower ON-state losses. However, the present power module packages are limiting the performance of these unique switches. The objective of this article is to push the boundaries of high-density, high-speed, 10-kV power module

This article focuses on providing the laminated busbar design guidance for a three-level T-type neutral-pointclamped (3L-TNPC) inverter to achieve low stray inductance and balanced inductance distribution between paralleled power switches. As a result, equalized dynamic current sharing can be accomplished. To discover the design strategy, this article first derives the mutual-inductance-decoupled equivalent

The electric propulsion drives for the more-electric aircraft need lightweight and high-efficiency power converters. Moreover, a modular approach to the construction of the drive ensures reduced costs, reliability, and ease of maintenance. In this article, the design and fabrication procedure of a modular dc-ac three-level t-type single phase-leg power electronics building block (PEBB) rated for 100-kW

Low propagation delay time is essential for SiC drivers at high frequency. The propagation delay time of the commercial parts is normally over 100 ns. A signal isolation circuit and a level shifting circuit are proposed and applied in SiC drivers with minimum propagation delay time. The narrow edge signals of the input pulsewidth modulation (PWM) signal are extracted by nondelay RC differential circuits

Using silicon carbide (SiC) power devices can potentially improve the efficiency of a power electronic system, but it may also introduce severe electromagnetic interference (EMI) problems due to the fast switching speed. The conventional gate driver cannot provide the flexibility to adjust the switching speed of SiC dynamically. To address this issue, an intelligent versatile active gate driver (AGD)

Wide-bandgap devices, such as silicon carbide and gallium nitride, have high switching speed potential. However, the actual speed in practical application is limited by circuit parasitics and interaction between high-side switch and lowside switch in a phase-leg configuration, known as crosstalk effect. This article proposes an isolated voltage source gate driver with crosstalk suppression capability

Limited by low availability, high price, and poor switching performance of high-voltage power devices, connecting low-voltage devices in series to block much higher voltages is always an option. However, severe voltage unbalance during turn-off transient remains to be solved. Most of the existing methods designed for low-speed silicon (Si) insulated gate bipolar transistor (IGBT) cannot be directly

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are required to be connected in series to meet the high-voltage requirement since the blocking voltage of a single device is limited. In order to solve the voltage unbalancing problem in such a series-connection application, a single voltage-balancing gate driver combined with limiting Snubber circuits is proposed in

Bootstrap-based gate drivers are one of the simplest and cheapest solutions for driving the high-side devices in halfbridge-based power converters. Unfortunately, bootstrapped gate drivers are unable, on their own, to supply the negative gate- source voltage needed for safe turn off of SiC MOSFETs. This article proposes a novel and simple level shifter, applied to bootstrap-based gate drivers, able

In recent years, the use of silicon carbide (SiC) power semiconductor devices in medium-voltage (MV) applications has been made possible due to the development of high blocking voltage (10-15 kV)-based devices. While the use of these devices brings in a lot of advantages, the semiconductor devices are exposed to high peak stress (of up to 15 kV) and a very high dv/dt (of up to 100 kV/μs). The high

Intermediate bus architecture employing 48-V bus converters is widely used in power supply applications. With the rapid increase of demanded power by these loads, higher efficiency and power density are driving better performance power management solutions. In this article, a Gallium Nitride (GaN) based design of a two-stage solution is proposed. The first stage is a multi-phase Buck for regulation

This paper presents a time-sharing frequency doubler principle-based current-fed zero current softswitching (ZCS) high-frequency-resonant (HF-R) inverter-based dc-dc converter for inductive power transfer (IPT) systems featuring a Silicon (Si) and Silicon Carbide (SiC) hybrid power module. The newly proposed resonant dc-dc converter is suitable for producing a higher frequency resonant current with

Single-phase ac-dc converter for low-frequency pulse load normally requires high-capacitance electrolytic capacitors, which reduces the lifetime and may cause reliability problem. To meet the challenges of voltage ripple, this article introduces a power pulsation buffer (PPB) that smooths the output voltage and provides essential pulse power to the load simultaneously. The proposed PPB is realized

The emergence of wide bandgap semiconductors paved the way for integration of high-efficiency, high-power-density converters into industrial applications. Key to achieving these performance goals is operation at high switching frequencies, which requires mitigation of switching losses by schemes, such as zero-voltage switching (ZVS). The phase-shifted fullbridge (PSFB) converter is a very appealing

The silicon (Si)/silicon carbide (SiC) hybrid switch comprising a Si insulated gate bipolar translator (IGBT) and a SiC metal-oxide-semiconductor field effect transistor (MOSFET) in parallel offers not only excellent performance and cost tradeoff but also inherent switch-level redundancy for potential power converter fault-tolerant operation. It is possible to operate the power converter even when