An Erratum to this paper has been published: https://doi.org/10.1134/S1063782621030192

Abstract An analysis of the I–V characteristics makes it possible to determine the mechanisms of conduction corresponding to different states of the flow channels upon resistive switching in porphyrazine films. A variation in the temperature, the structure of the dielectric matrix, and the type of majority charge carriers makes it possible to estimate the applicability of the model of conducting filaments

Abstract The features of the electrochemical deposition of metal coatings on p-Si are presented, and the properties of the grown metal layers are measured. The dependence of the depleted-region thickness and the internal voltage drop in it on the electrolyte composition and deposited metal type is studied. The effect of the current density and electrolyte composition on the precipitate properties is

Abstract The impact of the shape of indium-antimonide quantum dots on some important electrical parameters is investigated by the analysis of their optical spectra, transmission electron microscopy, scanning tunneling microscopy, particle size measurements, and scanning electron microscopy. It is shown that the real shape (spherical and cubic models) of quantum dots with the same characteristic size

Abstract Improving material quality is essential for obtaining a high-power device. Surface trapping effects have been present in all HEMT devices, and have significantly impacted the problem of drain-current collapse. In this paper, performance of intentionally non-doped AlGaN|GaN|Si (HEMTs) before and after passivation with SiO2|SiN is investigated. Capacitance-voltage at various temperatures (C–V–T)

Abstract Due to the lack of work in structures containing thallium (Tl), this work is devoted to study of Ga8Tl2N quantum-dot photodetectors. Parameters are specified first. This structure is shown to have low absorption. Enough quantum efficiency is obtained. This detector works at 360–460 nm and peaked at 410 nm, which can be used in optical coherence tomography applications.

Abstract The effects of the high-temperature (T = 1880°C) diffusion of beryllium ions and of electron irradiation on the optical properties of single-crystal aluminum nitride is studied. It is shown that the introduction of Be into AlN results in a change in the spectral characteristics of Raman scattering and infrared absorption. The analysis of Raman spectra and infrared adsorption spectra in crystals

Abstract The propagation of solitary acoustic pulses in magnetized quantum electron–hole plasmas of semiconductors has been studied. The effects of an external magnetic field and quantum terms, including the electrons and holes quantum recoil effects, exchange-correlation force, and the degenerate pressure of charge carriers are considered. Starting from quantum hydrodynamic equations, by using the

Abstract The effect of ambient humidity on the electrical conductivity of α-Ga2O3 and α-Ga2O3/ε-Ga2O3 is investigated. Polymorphic epitaxial Ga2O3 layers are deposited by the method of chloride vapor-phase epitaxy on sapphire substrates. The contacts are made of Pt and Pt/Ti. It is discovered that the I–V characteristics of the Pt/α-Ga2O3/Pt and Pt/Ti/α-Ga2O3/ε-Ga2O3/Ti/Pt structures have a high sensitivity

Abstract High-quality gallium nitride etching is highly desirable in electronic device fabrications. For the GaN base devices, the electronic properties largely depended on the etching induced surface damages. To overcome this, a controllable GaN etching method was developed using inductively coupled plasma reactive ion etching (ICP-RIE) by controlling radio frequency (RF) power, and DC bias. The etching

Abstract The anisotropy of the conductivity and the shape of the I–V characteristics for a two-dimensional quantum superlattice with the nonharmonic electron dispersion law are investigated for different directions of the current and field applied to the structure relative to the superlattice axes. The anisotropy of the characteristics and the conditions for the occurrence of multivalue I–V characteristics

Abstract Textured ZnO films obtained on amorphous substrates using the ion-beam sputtering method are studied. X-ray diffraction and atomic-force microscopy methods show that the resulting films have a polycrystalline structure immediately after deposition. It is established that further annealing of the samples in the temperature range from 200°C to 500°C results in recrystallization, which leads

Abstract Copper zinc tin sulphide (CZTS) thin films have been deposited on glass substrate at 323 ± 5 K using sequential ionic layer adsorption reaction (SILAR). The number of SILAR cycles required for optimum crystalline quality CZTS thin films was optimized. The as-deposited CZTS thin films showed kesterite crystalline structure with preferential orientation along (103) plane. Structural, optical

Abstract A study of the electroluminescence of asymmetric InAs/InAs1 – ySby/InAsSbP light-emitting diode heterostructures with a molar fraction of InSb in the ternary solid solution in the active region y = 0.15 and y = 0.16 in the temperature range 4.2–300 K is reported. It is found on the basis of experimental data that a staggered type-II heterojunction is formed at the InAs1 – ySby/InAs0.41Sb0

Abstract The influence of the topology of electrodes on the electrical and photoelectric characteristics of metal–semiconductor–metal structures is studied. Gallium-oxide films are produced by the radio-frequency magnetron-assisted sputtering of a Ga2O3 target onto (0001)-oriented sapphire substrates. Two types of electrodes are formed on the surface of the oxide films. The first type corresponded

Abstract In the present paper, a Pb-free and eco-friendly perovskite solar cell (PSC) with a new structure of glass|TCO|TiO2|CZTSe1 – xSx|CH3NH3SnI3|back contact has been modeled and simulated by SCAPS-1D package. To verify the simulation process, an experimental report on Pb-free PSC was simulated initially. Then, the costly Spiro-OMeTAD layer as the common hole-transport material (HTM) was eliminated

Abstract Edge-emitting lasers with active regions based on novel InGaAs/GaAs quantum heterostructures of transitional dimensionality, i.e., quantum well-dots, which are intermediate in properties between quantum wells and quantum dots, are studied. It is shown that the rate of the lasing-wavelength blue shift decreases with increasing number of quantum well-dot layers in the active region and with

Abstract The diffusion of indium atoms in silicon-dioxide films previously implanted with arsenic ions with different energies is studied in relation to the temperature of postimplantation annealing. It is established that the diffusion properties of indium depend on the presence of arsenic atoms in the film and their energy. An increase in the As content in the region of the average projective range

Abstract The thermal expansion and thermal conductivity of In2S3 and AgIn5S8 single-crystal compounds and (In2S3)x(AgIn5S8)1 – x alloys grown by the Bridgman method are studied. It is established that the thermal-expansion coefficient linearly varies under changes in the composition parameter x and the thermal conductivity has a minimum for the equimolar composition. From experimental data on the thermal-expansion

Abstract The molecular-dynamics simulation of the formation of dimers for the case of the low-temperature (001) reconstruction of a GaAs surface terminated in Ga or As atoms is employed using the analytical potential, which takes into account σ- and π-bonds between atoms. The values of the decrease in the potential energy of atoms during the formation of the surface of an isolated dimer are found,

Abstract Models of the densities of states of amorphous graphene and graphene-like binary compounds are proposed. The models are used for estimations of the quantum capacitance of these structures. It is shown that amorphization reduces the quantum capacitance. The same effect takes place if graphene or a graphene-like compound interacts with a metal substrate. At the same time, in the case of a semiconductor

Abstract The high-power picosecond optical pumping of a thin GaAs layer generates intense picosecond stimulated emission. The emission spectrum is a light continuum. Based on the results of previous experimental work, the following is carried out. (a) The amplification lengths of the emission spectral components, i.e., the different distances over which different emission components are amplified in

Abstract According to developed methods, in the fields of the mutual solubility of initial binary compounds (InP, InSb, and CdS), solid solutions of the InP–CdS and InSb–CdS systems certified as substitutional solid solutions with a cubic sphalerite structure are obtained. Their bulk (crystal-chemical, structural) and surface (the chemical composition of surfaces, acid-base) properties are studied

Abstract The temperature dependence of the anisotropy of the magnetotransport properties of GaMnAs epitaxial layers featuring ferromagnetic order is investigated. The anisotropy of negative magnetoresistance that is unrelated to the presence of uniaxial anisotropy and the orientation of the hard magnetization axis is observed. This anisotropy may result from the occurrence of spatially oriented structures

Abstract Group III-nitride semiconductors (GaN, AlN, and InN) are attractive materials for a wide range of electronic and photonic applications. The most widely employed growth plane for III-nitrides is the polar plane, characterized by the presence of a polarization-induced internal electric field in heterostructures. To eliminate the deleterious effects of polarization, III-nitride devices grown

Abstract Radiation-induced effects in Cu(In,Ga)Se2 alloy thin films after implantation with hydrogen ions with energies of 2.5, 5, and 10 keV and a dose of ~3 × 1015 cm–2 are studied. Comparative analysis of the optical characteristics of nonimplanted and hydrogen-implanted Cu(In,Ga)Se2 films is conducted on the basis of photoluminescence spectra and luminescence-excitation spectra recorded at liquid-helium

Abstract The real-time measured envelopes of high-power picosecond optical pumping and of the intrinsic stimulated picosecond emission of a thin GaAs layer are compared. The emission duration excess over the pump duration is explained on the basis of negative feedback between the emission intensity and carrier heating by this emission. The main parameter of this duration excess is the characteristic

Abstract A cycle of experimental investigations is carried out, specifically, the measurements and analysis of field dependences of the static magnetic susceptibility in samples of single-crystal SiC thin films grown on the (100), (110), and (111) surfaces of a Si single crystal by the method of the self-consistent substitution of atoms due to the chemical reaction of silicon with carbon-monoxide (CO)

Abstract Nanoheterostructures based on titanium dioxide synthesized by the sol–gel technique are studied. Microscopy, X-ray diffraction, optical spectroscopy, and electron-spin resonance techniques are used. All the investigated samples are characterized by a large specific surface area (~100 m2 per 1 g substance). It is established that the main types of radicals in the obtained structures are N•

Abstract The non-doped and alkali (Na,K)-doped Cu2ZnSnS4 (CZTS) thin films were prepared using the sol–gel spin-coating method on the glass substrate, and the changes in the structural, optical, and electrical characteristics of the films were examined and compared. The structural study results obtained showed that all the prepared samples had a kesterite structure. The scanning electron microscopy

Abstract The effect of the intensity of ionizing radiation on the volume charge and surface-state density of metal—oxide—semiconductor (MOS) structures with thin gate silicon dioxide is modeled. It is shown that the dependences of the surface-state density and volume charge on the total time of ionizing radiation and subsequent annealing at different ionizing-radiation intensities lie on the corresponding

Abstract With the continuous development of optoelectronic devices, parasitic capacitance of electrostatic protection device in the optoelectronic control circuit has become an important factor affecting its response speed. This work designs and manufactures a novel light-controlled dual-directional gate silicon-controlled rectifier (LDGSCR) to study the relationship between light and parasitic capacitance

Abstract The article presents the results of investigation of the giant magnetoresistance effect in a magnetic metal–organic semiconductor–non-magnetic metal structure with a magnetoresistive coefficient of ~2600%. The influence of a magnetic field on the concentration and mobility of charge carriers and the ferromagnetic–polymer potential barrier is studied. The possibility of theoretical interpretation

Abstract High-voltage (2000V) 4H-SiC Schottky diodes are fabricated. To suppress the premature breakdown at the edge of diode structures, a field plate is formed as the edge termination. In this plate, an insulator layer is formed via the self-aligned implantation of high-energy (53 MeV) argon ions into 4H-SiC. To mask the active region of the diodes, 10–12-μm-thick nickel columns with vertical walls

Abstract Analytical expressions are presented, and, through them, the analysis of component parts of the electrical resistance of injection microdisk lasers is carried out depending on the size of the microdisk resonator, parameters of the substrate, and configuration of the contact to it.

Abstract In this work, the structural and electronic properties of the ternary chalcopyrite semiconductors ZnSiAs2 and ZnSnAs2 and their related ZnSi1 – xSnxAs2 quaternary alloys are presented. The density functional theory (DFT) within full-potential linearized augmented plane wave is employed. To treat the exchange–correlation potential for the total energy calculations, the generalized gradient

Abstract The possibility of forming a strained pseudomorphous quantum well (QW) consisting of a InxGa1 – xAsyP1 – y quaternary alloy upon the deposition of InAs onto the surface of an epitaxial GaP/Si layer with a developed relief is demonstrated. The QW is studied by means of transmission electron microscopy and steady-state photoluminescence spectroscopy. The formation of two QW segments different

Abstract The TCAD simulation of high-voltage 4H-SiC-based p+–n–n+ diodes with an edge semi-insulating i-type region created via the complete compensation for doping donors in the n region by deep carrier traps (the energy position of the traps in the 4H-SiC band gap is 1.2 eV below the bottom of the conduction band) is performed. It is shown that the efficiency of the edge semi-insulating i-type region

Abstract The results of investigations of silicon–ultrathin oxide (42 Å)–polysilicon structures resistant to field damages are presented. It is found that the total charge exchange of localized electronic states and minority charge carriers concentrated at the substrate–insulator interface, which occurs with a change in the field voltage, is close to the same characteristic of structures with an oxide

Abstract A nitride GaAs Schottky diode have been fabricated by nitridation of GaAs substrates with thickness 0.7 nm of GaN layer. The capacitance–voltage C(V) and conductance–voltage G/ω versus V of the Au|GaN|GaAs structures were investigated at room temperature for different frequencies ranging between 1 kHz and 1 MHz. The measurements of C(V) and G/ω versus V of the Au|GaN|GaAs Schottky diode were

Abstract The effect of the Gd concentration on the temperature and pressure coefficients of the resistance of thin polycrystalline films of Sm1 – xGdxS solid solutions, where x = 0, 0.05, 0.1, 0.2, 0.33, and 0.5 is studied. The films are grown by explosive evaporation in vacuum of powders of the initial compounds and sedimentation of the latter from the gas phase onto glass substrates. The dependences

Abstract The effects of total ionizing dose (TID) radiation from 60Co gamma-rays on an 8-transistor global shutter exposure complementary metal-oxide semiconductor image sensor (CIS) within a star sensor is presented to analyze the sources of star sensor performance degradation and the decrease of attitude measurement accuracy. The dark current, dark signal non-uniformity, and photon response non-uniformity

Abstract Effect of an isolated Ge nanowire embedded in an n-doped Si on electron beam induced current is simulated by a Monte Carlo calculation algorithm. A circular nano-contact is used to collect the current generated by the use of primary energy of 5 or 10 keV in a perpendicular configuration along a line passing through the contact center. The nanowire, considered as a recombination center, is

Abstract The performance and scalability of silicon nanowire field-effect transistor (SiNWFET) and carbon nanotube field-effect transistor (CNTFET) with surround gate geometry were studied using such tools as material exploration and design analysis (MedeA) and device modeling and simulation SilvacoTCAD. The SiNWFET and CNTFET with gate-all-around (GAA) structure offer good gate electrostatic control

Abstract In this study, we investigated the Cu-doped ZnO (CZO) structure. This structure was deposited on the Si and glass substrates using the RF magnetron sputtering technique. Morphological and structural features of CZO thin films (CZOs), as-deposited and annealed at temperatures of 200, 400, and 600°C, were characterized by X-Ray diffraction (XRD), scanning electron microscopy (SEM), as well as

Abstract In this work, we have prepared ZnO, NiO, and nanocomposites ZnO–NiO thin films elaborated by the chemical method of spray pyrolysis on glass substrates at a temperature of 480°C. The prepared samples have been analyzed by means of the X-ray diffraction (XRD), UV-visible spectrophotometry, micro-Raman and m-lines spectroscopies techniques. The structure of the thin ZnO films is hexagonal of

Abstract The current–voltage characteristics of silicon photodiodes before and after irradiation by γ-quanta with an energy of 1.25 MeV and an irradiation dose of 0.5 mrad are investigated. It is established that the reverse currents are determined by the Poole–Frenkel mechanism in a strong electric field with the influence of electron–phonon interaction. A procedure is developed and the parameters

Abstract It is shown that, in the base region of Schottky diodes, at current densities j higher than a certain value jst1, quasi-neutral drift-stimulated diffusion is implemented along with diffusion transport. The effect of this newly discovered mode in the I–V characteristics of Schottky diodes at high current densities is investigated. It is demonstrated that, when the ratio between the base width

Abstract The absorption Mössbauer spectroscopy on 119Sn impurity centers shows that germanium atoms in the structure of amorphous and polycrystalline Ge2Sb2Te5 films have different local symmetries (tetrahedral in the amorphous phase and octahedral in the crystalline). By emission Mössbauer spectroscopy on 119mSn impurity centers formed after the radioactive decay of 119Sb or 119mTe parent atoms, tin

Abstract In present work, we studied the mechanisms of dissolution of porous silicon nanoparticles (PSi NPs) during their incubation in model liquids, i.e. water and phosphate buffered saline (PBS) at 37°С. The methods of transmission electron microscopy (TEM), photoluminescence (PL) spectroscopy, and Raman spectroscopy were used. According to TEM images, PSi NPs consist of silicon nanocrystals (nc-Si)

Abstract Coherent and incoherent stable electronic quantum objects are observed at room temperature due to the formation of regions with the forcefully changed similar charge states on silicon surfaces by atomic force microscopy. Using the theory of entangled states, the interaction conditions for such objects are established and the quantum screening and quantum interference effects between them are

Abstract The purpose of the study is to investigate the effect of a new type of compliant substrates based on an AlGaAs superstructure layer (SL) and a protoporous Si (proto-Si) layer formed on a crystalline Si (c-Si) layer on the optical properties of an epitaxial GaAs layer grown by metal–organic chemical vapor deposition. It is for the first time shown that the low-temperature growth of high-quality

Abstract Undoped nanocrystalline diamond (NCD) films less than 1 μm thick grown on Si (100) silicon by microwave plasma-assisted chemical vapor deposition at a frequency of 2.45 GHz are studied. To obtain diamond dielectric films with maximum resistivity the deposition of films in three gas mixtures is investigated: hydrogen-methane mixture, hydrogen-methane mixture with the addition of oxygen and

Abstract Interest in creating and studying silicon-based InSb nanocrystals is due to the need for hybrid integrated circuits involving elements with different functional properties. Optical phonons localized in low-dimension crystals can affect both the optical and electrical properties of these crystals. The optical-phonon properties of InSb nanocrystals ion-beam synthesized in silicon and InSb nanocrystals

Abstract The incorporation and activation of arsenic from tris(dimethylamino)arsine in CdTe layers grown by metal-organic chemical vapor deposition from dimethylcadmium and diisopropyltellurium on GaAs substrates are investigated. The incorporation of arsenic into CdTe depends on the crystallographic orientation of the layers and increases in the series (111)B → (100) → (310). The arsenic concentration

Abstract This paper presents a finite-element-based two-dimensional numerical simulation study of the vertical channel engineering approaches for controlling the short-channel effects (SCEs) in organic transistors based on thin-film transistor technology (OTFTs). The impact of gate-oxide thickness TOx scaling and usage of high-permittivity gate dielectric material has been analyzed for a bottom-contact

Abstract The purpose of the study is to investigate the effect of a new type of compliant substrate based on an AlGaAs superstructure layer (SL) and a protoporous Si (proto-Si) layer formed on a crystal Si (c-Si) layer on the practical implementation and specific features of the epitaxial growth of GaAs layers by metal–organic chemical vapor deposition. It is for the first time shown that the low-temperature

Abstract The value of exchange energy for near-surface double-donor and double-quantum dot structures under the effect of external electric field has been calculated using unrestricted Hartree–Fock method. The dependences of exchange energy on geometric parameters have been obtained. It has been found that the location of donor centers near the surface of the semiconductor leads to an increase in the

Abstract The electron spectrum in a uniform nanowire with a hexagonal cross-section is calculated by means of a numerical diagonalization of the effective-mass Hamiltonian. Two basis sets are utilized. The wave-functions of low-lying states are calculated and visualized. The approach has an advantage over mesh methods based on finite-differences (or finite-elements) schemes: non-physical solutions

Abstract In this work, we applied automatic design generation techniques to obtain the most efficient quantum cascade laser (QCL) structures for the mid-infrared range. For simulations, the transfer matrix, ensemble Monte Carlo and density matrix techniques, accelerated with CUDA computation technology, were utilized. As a result, several designs were created using the modification of the genetic algorithm