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InGaAsP/InP Photovoltaic Converters for Narrowband Radiation Semiconductors (IF 0.7) Pub Date : 2024-03-15 N. S. Potapovich, M. V. Nakhimovich, V. P. Khvostikov
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Influence of Rapid Thermal Annealing on the Distribution of Nitrogen Atoms in GaAsN/GaAs Semiconductors (IF 0.7) Pub Date : 2024-03-15 A. A. Lazarenko, K. Yu. Shubina, E. V. Nikitina, E. V. Pirogov, A. M. Mizerov, M. S. Sobolev
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Relationship between Wavelength and Gain in Lasers Based on Quantum Wells, Dots, and Well-Dots Semiconductors (IF 0.7) Pub Date : 2024-03-15 G. O. Kornyshov, N. Yu. Gordeev, Yu. M. Shernyakov, A. A. Beckman, A. S. Payusov, S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maximov
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Monopolarity of Hot Charge Carrier Multiplication in AIIIBV Semiconductors at High Electric Field and Noiseless Avalanche Photodiodes (a Review) Semiconductors (IF 0.7) Pub Date : 2024-03-15 M. P. Mikhailova, A. P. Dmitriev, I. A. Andreev, E. V. Ivanov, E. V. Kunitsyna, Yu. P. Yakovlev
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Model for Speed Performance of Quantum-Dot Waveguide Photodiode Semiconductors (IF 0.7) Pub Date : 2024-03-15 A. E. Zhukov, N. V. Kryzhanovskaya, I. S. Makhov, E. I. Moiseev, A. M. Nadtochiy, N. A. Fominykh, S. A. Mintairov, N. A. Kalyuzhyy, F. I. Zubov, M. V. Maximov
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Optical and Structural Properties of Hg0.7Cd0.3Te Epitaxial Films Semiconductors (IF 0.7) Pub Date : 2024-03-15 D. A. Andryushchenko, M. S. Ruzhevich, A. M. Smirnov, N. L. Bazhenov, K. D. Mynbaev, V. G. Remesnik
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Manifestation of Dipole-Dipole and Quadrupole Interactions in the Correlator Spectrum of Optically Cooled Nuclear Spins of a Bulk n-Gaas Sample Semiconductors (IF 0.7) Pub Date : 2024-03-15 V. M. Litvyak, R. V. Cherbunin, F. Yu. Soldatenkov, V. K. Kalevich, K. V. Kavokin
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Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers Semiconductors (IF 0.7) Pub Date : 2024-03-15 M. V. Maximov, Yu. M. Shernyakov, G. O. Kornyshov, O. I. Simchuk, N. Yu. Gordeev, A. A. Beckman, A. S. Payusov, S. A. Mintairov, N. A. Kalyuzhnyy, M. M. Kulagina, A. E. Zhukov
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SERS-Active Substrates Based on Embedded Ag Nanoparticles in c-Si: Modeling, Technology, Application Semiconductors (IF 0.7) Pub Date : 2024-03-15 A. A. Ermina, N. S. Solodovchenko, K. V. Prigoda, V. S. Levitskii, S. I. Pavlov, Yu. A. Zharova
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High Sensitivity of Halide Vapor Phase Epitaxy Grown Indium Oxide Films to Ammonia Semiconductors (IF 0.7) Pub Date : 2024-03-15 D. A. Almaev, A. V. Almaev, V. I. Nikolaev, P. N. Butenko, M. P. Scheglov, A. V. Chikiryaka, A. I. Pechnikov
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Structure and Optical Properties of a Composite AsSb–Al0.6Ga0.4As0.97Sb0.03 Metamaterial Semiconductors (IF 0.7) Pub Date : 2024-03-15 L. A. Snigirev, V. I. Ushanov, A. A. Ivanov, N. A. Bert, D. A. Kirilenko, M. A. Yagovkina, V. V. Preobrazhenskii, M. A. Putyato, B. P. Semyagin, I. A. Kasatkin, V. V. Chaldyshev
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Investigation of a p–i–n Photodetector with an Absorbing Medium Based on InGaAs/GaAs Quantum Well-Dots Semiconductors (IF 0.7) Pub Date : 2024-03-15 N. V. Kryzhanovskaya, S. A. Blokhin, I. S. Makhov, E. I. Moiseev, A. M. Nadtochiy, N. A. Fominykh, S. A. Mintairov, N. A. Kaluyzhnyy, Yu. A. Guseva, M. M. Kulagina, F. I. Zubov, E. S. Kolodeznyi, M. V. Maximov, A. E. Zhukov
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On Heating Mechanisms in LEDs Based on p-InAsSbP/n-InAs(Sb) Semiconductors (IF 0.7) Pub Date : 2024-03-15 A. L. Zakgeim, S. A. Karandashev, A. A. Klimov, R. E. Kunkov, T. S. Lukhmyrina, B. A. Matveev, M. A. Remennyi, A. A. Usikova, A. E. Chernyakov
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Changes in the Electronic Properties of the GaN/Si(111) Surface under Li Adsorption Semiconductors (IF 0.7) Pub Date : 2024-03-14 S. N. Timoshnev, G. V. Benemanskaya, A. M. Mizerov, M. S. Sobolev, Ya. B. Enns
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Solubility of Magnesium in Silicon Semiconductors (IF 0.7) Pub Date : 2024-03-14 V. B. Shuman, A. A. Lavrentiev, A. A. Yakovleva, N. V. Abrosimov, A. N. Lodygin, L. M. Portsel, Yu. A. Astrov
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Luminescence Features of Bulk Crystals β-(GaxAl1–x)2O3 Semiconductors (IF 0.7) Pub Date : 2024-03-14 E. V. Dementeva, P. A. Dementev, N. P. Korenko, I. I. Shkarupa, A. V. Kremleva, D. Yu. Panov, V. A. Spiridonov, M. V. Zamoryanskaya, D. A. Bauman, M. A. Odnobludov, A. E. Romanov, V. E. Bugrov
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Synchrotron Radiation Photoemission Study of the Electronic Structure of the Ultrathin K/AIN Interface Semiconductors (IF 0.7) Pub Date : 2024-03-14 G. V. Benemanskaya, S. N. Timoshnev, G. N. Iluridze, T. A. Minashvili
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Heterostructure of a 2.5 THz Range Quantum-Cascade Detector Semiconductors (IF 0.7) Pub Date : 2024-03-14 A. V. Babichev, E. S. Kolodeznyi, A. G. Gladyshev, D. V. Denisov, A. Jollivet, P. Quach, L. Ya. Karachinsky, V. N. Nevedomsky, I. I. Novikov, M. Tchernycheva, F. H. Julien, A. Yu. Egorov
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Formation of a Copper Contact Grid on the Surface of Silicon Heterojunction Solar Cells Semiconductors (IF 0.7) Pub Date : 2024-03-14 S. N. Abolmasov, A. S. Abramov, V. N. Verbitskii, G. G. Shelopin, A. V. Kochergin, E. I. Terukov
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High-Temperature Diffusion of the Acceptor Impurity Be in AlN Semiconductors (IF 0.7) Pub Date : 2024-03-14 O. P. Kazarova, S. S. Nagalyuk, V. A. Soltamov, M. V. Muzafarova, E. N. Mokhov
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Strip Thermoelectric Generator Made of Carbon Fiber Semiconductors (IF 0.7) Pub Date : 2024-03-14 D. K. Ivanov, K. G. Ivanov, O. N. Uryupin
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Effect of Dendritic Inhomogeneity on the Thermoelectric Properties of Bi0.88Sb0.12 Crystals Semiconductors (IF 0.7) Pub Date : 2024-03-14 V. M. Grabov, O. N. Uryupin
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Impact of Silicon Wafer Surface Treatment on the Morphology of GaP Layers Produced by Plasma Enhanced Atomic Layer Deposition Semiconductors (IF 0.7) Pub Date : 2024-03-14 A. V. Uvarov, V. A. Sharov, D. A. Kudryashov, A. S. Gudovskikh
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Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy Semiconductors (IF 0.7) Pub Date : 2024-03-14 B. R. Semyagin, A. V. Kolesnikov, M. A. Putyato, V. V. Preobrazhenskii, T. B. Popova, V. I. Ushanov, V. V. Chaldyshev
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Effect of Thermal History on the Properties of Efficient Thermoelectric Alloys Ge0.86Pb0.1Bi0.04Te Semiconductors (IF 0.7) Pub Date : 2024-03-14 A. A. Shabaldin, A. Yu. Samunin, P. P. Konstantinov, S. V. Novikov, A. T. Burkov, Zhonglin Bu, Yanzhong Pei
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Study of the Spatial Characteristics of Emission of Surface-Emitting Ring Quantum-Cascade Lasers Semiconductors (IF 0.7) Pub Date : 2024-03-14 A. V. Babichev, D. A. Mikhailov, D. V. Chistyakov, E. S. Kolodeznyi, A. G. Gladyshev, G. V. Voznyuk, M. I. Mitrofanov, D. V. Denisov, S. O. Slipchenko, A. V. Lyutetskii, V. V. Dudelev, V. P. Evtikhiev, L. Ya. Karachinsky, I. I. Novikov, N. A. Pikhtin, A. Yu. Egorov, G. S. Sokolovskii
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Peculiarities of Magnetic Oscillations in HgSe Monocrystal with Co Impurities of Low Concentration (<1 at %) Semiconductors (IF 0.7) Pub Date : 2024-03-14 A. I. Veinger, I. V. Kochman, V. I. Okulov, T. E. Govorkova
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High Efficiency (EQE = 37.5%) Infrared (850 nm) Light-Emitting Diodes with Bragg and Mirror Reflectors Semiconductors (IF 0.7) Pub Date : 2024-03-13 A. V. Malevskaya, N. A. Kalyuzhnyy, S. A. Mintairov, R. A. Salii, D. A. Malevskii, M. V. Nakhimovich, V. R. Larionov, P. V. Pokrovskii, M. Z. Shvarts, V. M. Andreev
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The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates Semiconductors (IF 0.7) Pub Date : 2024-03-13 N. A. Sobolev, A. E. Kalyadin, K. F. Shtel’makh, E. I. Shek, V. I. Sakharov, I. T. Serenkov
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Two-Dimensional Plasma Excitations in a Random Array of Quantum Antidots Semiconductors (IF 0.7) Pub Date : 2024-03-13 Yu. B. Vasilyev
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Optimization of the Buffer Dielectric Layer for the Creation of Low-Defect Epitaxial Films of the Topological Insulator Pb1–xSnxTe with x ≥ 0.4 Semiconductors (IF 0.7) Pub Date : 2024-03-13 A. K. Kaveev, O. E. Tereshchenko
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Stimulated Emission in the InAs/InAsSb/InAsSbP Heterostructures with Asymmetric Electronic Confinement Semiconductors (IF 0.7) Pub Date : 2024-03-13 A. A. Semakova, M. S. Ruzhevich, V. V. Romanov, N. L. Bazhenov, K. D. Mynbaev, K. D. Moiseev
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Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range Semiconductors (IF 0.7) Pub Date : 2024-03-13 A. A. Lebedev, V. V. Kozlovski, M. E. Levinshtein, D. A. Malevsky, R. A. Kuzmin
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Correlation of the Electronic and Atomic Structure at Passivated n-InP(100) Surfaces Semiconductors (IF 0.7) Pub Date : 2024-03-13 M. V. Lebedev, T. V. Lvova, A. N. Smirnov, V. Yu. Davydov, A. V. Koroleva, E. V. Zhizhin, S. V. Lebedev
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Study of Deposition of Al2O3 Nanolayers by Atomic Layer Deposition on the Structured ITO Films Semiconductors (IF 0.7) Pub Date : 2024-03-13 L. K. Markov, A. S. Pavluchenko, I. P. Smirnova, M. V. Mesh, D. S. Kolokolov, A. P. Pushkarev
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Elastic Deformations Distribution in Laterally Bent Conical Nanowires Semiconductors (IF 0.7) Pub Date : 2024-03-13 M. S. Dunaevskiy, P. A. Alekseev
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Viscous Flow of Two-Component Electron Fluid in Magnetic Field Semiconductors (IF 0.7) Pub Date : 2024-03-13 P. S. Alekseev
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Effect of Chemical Passivation of GaAs(001) Surface on Anisotropy and Orientation of Gold Nanoclusters Formed on It and Their Plasmons Semiconductors (IF 0.7) Pub Date : 2024-03-13 V. L. Berkovits, V. A. Kosobukin, V. P. Ulin, P. A. Alekseev, F. Yu. Soldatenkov, V. A. Levitskii
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1550 nm Range High-Speed Single-Mode Vertical-Cavity Surface-Emitting Lasers Semiconductors (IF 0.7) Pub Date : 2024-03-13 S. A. Blokhin, A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, M. A. Bobrov, A. G. Kuzmenkov, N. A. Maleev, V. V. Andryushkin, V. E. Bougrov, A. G. Gladyshev, D. V. Denisov, K. O. Voropaev, I. O. Zhumaeva, V. M. Ustinov, H. Li, S. C. Tian, S. Y. Han, G. A. Sapunov, A. Yu. Egorov, D. Bimberg
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Initial Stages of Growth of the GaN(11 $$\bar {2}$$ 2) Layer on a Nano-structured Si(113) Substrate Semiconductors (IF 0.7) Pub Date : 2024-03-13 V. N. Bessolov, E. V. Konenkova, S. N. Rodin
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Switching (Turn-on) Dynamics of Low-Voltage InP Homothyristors Semiconductors (IF 0.7) Pub Date : 2024-03-13 S. O. Slipchenko, O. S. Soboleva, A. A. Podoskin, Y. K. Kirichenko, T. A. Bagaev, I. V. Yarotskaya, N. A. Pikhtin
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Reduction of Misfit Dislocation Density in Metamorphic Heterostructures by Design Optimization of the Buffer Layer with Non-Linear Graded Composition Profile Semiconductors (IF 0.7) Pub Date : 2024-03-13 M. Yu. Chernov, V. A. Solov’ev, S. V. Ivanov
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Thermal Stability of Thick Films Based on Low-Temperature Thermoelectric Materials of Bi-Te-Se and Bi-Te-Sb Systems Modified with Copper-Oxide Additives Semiconductors (IF 0.7) Pub Date : 2024-02-15 A. V. Babich, I. A. Voloshchuk, A. A. Sherchenkov, S. Yu. Pereverzeva, D. D. Glebova, T. A. Babich
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Methods for Calculating the Effective Electrophysical Properties of Inhomogeneous Media Taking into Account Various Structural Features. Review Semiconductors (IF 0.7) Pub Date : 2024-02-15 I. V. Lavrov
Abstract—When creating inhomogeneous materials with required functional characteristics, theoretical methods for predicting their properties depending on the composition and structure are of great importance. This paper offers a review of methods for calculating the effective electrophysical characteristics of inhomogeneous media that can take into account such structural features of these media as
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Characteristics and Areas of Possible Application of Amorphous Silicon–Carbon and Metal–Silicon–Carbon Films. Review Semiconductors (IF 0.7) Pub Date : 2024-02-15 V. K. Dmitriev, E. A. Il’ichev, G. G. Kirpilenko, G. N. Petrukhin, G. S. Rychkov, V. D. Frolov
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Electrical Transport in Porous Structures of Si-Ge/c-Si Formed by the Electrochemical Deposition of Germanium in Porous Silicon Semiconductors (IF 0.7) Pub Date : 2024-02-15 D. L. Goroshko, I. M. Gavrilin, A. A. Dronov, O. A. Goroshko, L. S. Volkova, N. L. Grevtsov, E. B. Chubenko, V. P. Bondarenko
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Simulation of Material Sputtering and Gallium Implantation during Focused Ion Beam Irradiation of a Silicon Substrate Semiconductors (IF 0.7) Pub Date : 2024-02-15 O. V. Podorozhniy, A. V. Rumyantsev, R. L. Volkov, N. I. Borgardt
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Identification of the Structure of Nanoscale Layers of Multilayer Heterocomposites using Transmission Electron Microscopy Semiconductors (IF 0.7) Pub Date : 2024-02-15 R. L. Volkov, N. I. Borgardt
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Methods of Determining the Concentration and Mobility in Layers of Space-Charge Regions Semiconductors (IF 0.7) Pub Date : 2024-02-15 V. P. Karamyshev
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Spontaneous Emission in Leaky Modes of Nanowires Semiconductors (IF 0.7) Pub Date : 2023-12-01
Abstract Analytical expressions for spontaneous emission probability in the vicinity of nanowire for the emitter oriented in axial, radial and azimuthal direction in respect to the nanowire axis, has been obtained. Directionality of emission and probability of emission have been calculated for various positions of emitter. Enhancement of the spontaneous emission probability by one order of magnitude
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Modification in Adsorption Properties of Graphene During the Development of Viral Biosensors Semiconductors (IF 0.7) Pub Date : 2023-12-01
Abstract The well-known effect of the local interaction between graphene and photoresist (LIGF) during the creation of biosensors is shown to lead to non-uniform distribution of compressive stresses, which deteriorates the adsorption properties of graphene, parameter reproducibility, and detecting ability of influenza B and SARS-Cov-2 biosensors. It is also shown that controlling the occurrence of
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Optical Properties of Cu2O Nanowhiskers Semiconductors (IF 0.7) Pub Date : 2023-12-01
Abstract The optical properties of Cu2O nanowhiskers grown by the liquid method with material deposition in an electric field have been studied. The spectral lines forbidden by the selection rules for perfect Cu2O crystals were found in the Raman spectra. The nature of related phonon states is analyzed. In the photoluminescence spectra in the red and near-IR regions, broad bands of defective origin
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Analysis of I–V Characteristics of Si Diodes Irradiated with Short-Range Ions Semiconductors (IF 0.7) Pub Date : 2023-12-01
Abstract Radiation degradation of Si ion detectors becomes critical for the experiments at new facilities giving the beam intensity increase up to 105 times. The study is focused on the impact of heavily damaged Bragg peak region (BPR) at the ion range end on the bulk current of Si sensors irradiated with 53.4 MeV 40Ar ions in the fluence range (1–4) × 109 ion/cm2. It is shown that taking into account
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On the Growth, Structure, and Optical Reflection of Magnesium Silicide Films Grown on Porous Silicon under High-Vacuum Conditions Semiconductors (IF 0.7) Pub Date : 2023-11-10 Nikolay G. Galkin, Aleksandr V. Shevlyagin, Vladimir M. Il’yashchenko, Dmitriy T. Yan, Konstantin N. Galkin
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Application of RIE-Technology to Control Responsivity of 4H-SiC Photodiodes Semiconductors (IF 0.7) Pub Date : 2023-11-01
Abstract The possibility to increase the responsivity of 4H-SiC p+–n–n+-photodiodes by varying the thickness of the p+-epilayer has been studied. It is shown that the thinning of the upper epilayer by RIE with the use of metal contacts as a mask makes it possible to control both the maximum responsivity and the spectral dependence of the responsivity of photodiodes and does not lead to degradation
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Investigation of Structure, First Order Optical Susceptibility, Non-Linear Optical, Electrical Susceptibility Results, and IV Characterizations of Graphene Multilayer Semiconductors (IF 0.7) Pub Date : 2023-10-11 A. Abdel Moez, M. A. Salem, H. A. Elmeleegi, Z. S. Elmandouh
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Surface-Emitting Quantum-Cascade Lasers with a Grating Formed by Focused Ion Beam Milling Semiconductors (IF 0.7) Pub Date : 2023-10-01
Abstract The results of studies of 7.5–8.0 μm range surface-emitting ring quantum-cascade lasers are presented. A second- order diffraction grating with a calculated coupling coefficient of ~9 cm–1 is formed on the entire surface of the ring cavity by focused ion beam milling. Surface-emitting lasing at room temperature near 7.75 μm with a threshold current density of ~8 kA/cm2 and an outer radius
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Radiation Damage Accumulation in α-Ga2O3 under P and PF4 Ion Bombardment Semiconductors (IF 0.7) Pub Date : 2023-10-01
Abstract We study radiation damage accumulation in alpha polymorph of gallium oxide (α-Ga2O3) epitaxial layers under irradiation with 40 keV monatomic P and 140 keV molecular PF4 ions. The distribution of stable structural damage is bimodal in both cases. The growth rate of the surface disordered layer under PF4 ion irradiation is significantly higher than that under monatomic P ion bombardment. At
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Influence of the Oxygen during the Deposition of an Indium Tin Oxide Thin Film by Magnetron Sputtering for Heterojunction Solar Cells Semiconductors (IF 0.7) Pub Date : 2023-09-01
Abstract optoelectronic properties of indium and tin oxide thin films depending on the oxygen content in the total gas flow were experimentally investigated during deposition of these films by DC magnetron target sputtering. Relationship of the hetero junction thin-film solar cell output parameters vs. oxygen partial pressure in a vacuum vessel was examined during indium and tin oxide layer deposition
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Temperature Degradation of 2.3, 3.2 and 4.1 THz Quantum Cascade Lasers Semiconductors (IF 0.7) Pub Date : 2023-09-01
Abstract In this work, we conduct research of spectral and power characteristics of quantum cascade lasers (QCLs) based on a GaAs/Al0.15Ga0.85As active region emitting at 2.3 (A), 3.2 (B) and 4.1 (C) THz. The QCL devices had a double-metal Au waveguide and operated in pulsed mode with 1.5–9 μs pulses at 20 Hz repetition rate. Using the integral output power curves measured with different pulse durations