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Prediction and observation of defect-induced room-temperature ferromagnetism in halide perovskites J. Semicond. Pub Date : 2021-02-09 Zhiguo Sun; Bo Cai; Xi Chen; Wenxian Wei; Xiaoming Li; Dandan Yang; Cuifang Meng; Ye Wu; Haibo Zeng
The possibility to induce a macroscopic magnetic moment in lead halide perovskites (LHPs), combined with their excellent optoelectronic properties, is of fundamental interest and has promising spintronic applications. However, these possibilities remain an open question in both theory and experiment. Here, theoretical and experimental studies are performed to explore ferromagnetic states in LHPs originated
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Research on the photoluminescence of spectral broadening by rapid thermal annealing on InAs/GaAs quantum dots J. Semicond. Pub Date : 2021-02-09 Dandan Ning; Yanan Chen; Xinkun Li; Dechun Liang; Shufang Ma; Peng Jin; Zhanguo Wang
Photoluminescence (PL) test was conducted to investigate the effect of rapid thermal annealing (RTA) on the optical performance of self-assembled InAs/GaAs quantum dots (QDs) at the temperatures of 16 and 300 K. It was found that after RTA treatment, the PL spectrum of the QDs sample had a large blue-shift and significantly broadened at 300 K. Compared with the as-grown InAs QDs sample, the PL spectral
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Performance of hydrogenated diamond field-effect transistors on single and polycrystalline diamond J. Semicond. Pub Date : 2021-02-09 Rui Zhou; Cui Yu; Chuangjie Zhou; Jianchao Guo; Zezhao He; Yanfeng Wang; Feng Qiu; Hongxing Wang; Shujun Cai; Zhihong Feng
In this work, we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra, pulsed I–V characteristics analysis, and radio frequency performances measurements. It is found that a sample with higher defect concentration shows larger drain-lag effect and lower large-signal output power density
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An antiferromagnetic two-dimensional material: Chromium diiodides monolayer J. Semicond. Pub Date : 2021-02-09 Jingjing Zhang; Jin Yang; Liangzhong Lin; JiaJi Zhu
The two-dimensional (2D) ferromagnetic materials and the related van der Waals homostructures have attracted considerable interest, while the 2D antiferromagnetic material has not yet been reported. Based on first-principles calculations, we investigate both electronic structures and magnetic orderings of bulk and monolayer of chromium diiodides (CrI2). We demonstrate a counter-intuitive fact that
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Design of GGNMOS ESD protection device for radiation-hardened 0.18 μm CMOS process J. Semicond. Pub Date : 2021-02-09 Jianwei Wu; Zongguang Yu; Genshen Hong; Rubin Xie
In this paper, the ESD discharge capability of GGNMOS (gate grounded NMOS) device in the radiation-hardened 0.18 μm bulk silicon CMOS process (Rad-Hard by Process: RHBP) is optimized by layout and ion implantation design. The effects of gate length, DCGS and ESD ion implantation of GGNMOS on discharge current density and lattice temperature are studied by TCAD and device simulation. The size of DCGS
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Self-powered circularly polarized light detector based on asymmetric chiral metamaterials J. Semicond. Pub Date : 2021-02-09 Zhihua Yin; Xuemeng Hu; Jianping Zeng; Yun Zeng; Wei Peng
Circularly polarized light (CPL) has been given great attention because of its extensive application. While several devices for CPL detection have been studied, their performance is affected by the magnitude of photocurrent. In this paper, a self-powered photodetector based on hot electrons in chiral metamaterials is proposed and optimized. CPL can be distinguished by the direction of photocurrent
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Theoretical study of a group IV p–i–n photodetector with a flat and broad response for visible and infrared detection J. Semicond. Pub Date : 2021-02-09 Jinyong Wu; Donglin Huang; Yujie Ye; Jianyuan Wang; Wei Huang; Cheng Li; Songyan Chen; Shaoying Ke
We report a theoretical study of a broadband Si/graded-SiGe/Ge/Ge0.9Sn0.1 p–i–n photodetector with a flat response based on modulating thickness of the layers in the active region. The responsivity of the photodetector is about 0.57 A/W in the range of 700 to 1800 nm. This structure is suitable for silicon-based epitaxial growth. Annealing is technically applied to form the graded-SiGe. The photodetector
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The influence of total ionizing dose on the hot carrier injection of 22 nm bulk nFinFET J. Semicond. Pub Date : 2020-12-18 Baoshun Wang; Jiangwei Cui; Qi Guo; Qiwen Zheng; Ying Wei; Shanxue Xi
We investigate the hot carrier injection effect (HCI) and how X-ray radiation impacts the HCI of 22-nm nFinFETs as a function of device geometry and irradiation bias conditions in this paper. In the HCI test, the degradation of threshold voltage and saturation current decreases with the increase of fin number, which means that HCI weakens when the fin number increases. The reason is attributed to the
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RF performance evaluation of p-type NiO-pocket based β-Ga2O3/black phosphorous heterostructure MOSFET J. Semicond. Pub Date : 2020-12-18 Narendra Yadava; Shivangi Mani; R. K. Chauhan
The radio-frequency (RF) performance of the p-type NiO-pocket based β-Ga2O3/black phosphorous heterostructure MOSFET has been evaluated. The key figure of merits (FOMs) for device performance evaluation include the transconductance (g m) gate dependent intrinsic-capacitances (C gd and C gs), cutoff frequency (f T), gain bandwidth (GBW) product and output-conductance (g d). Similarly, power-gain (G
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Comprehensive study of crystalline AlN/sapphire templates after high-temperature annealing with various sputtering conditions J. Semicond. Pub Date : 2020-12-18 Wen Gu; Zhibin Liu; Yanan Guo; Xiaodong Wang; Xiaolong Jia; Xingfang Liu; Yiping Zeng; Junxi Wang; Jinmin Li; Jianchang Yan
High-quality AlN/sapphire templates were fabricated by the combination of sputtering and high-temperature (HT) annealing. The influence of sputtering parameters including nitrogen flux, radio frequency power, and substrate temperature on the crystalline quality and surface morphology of annealed AlN films were investigated. With lower substrate temperature, lower power, and lower N2 flux, the full
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Effects of high temperature annealing and laser irradiation on activation rate of phosphorus J. Semicond. Pub Date : 2020-12-18 Shaojie Li; Peide Han
Thermal annealing and laser irradiation were used to study the activation rate of phosphorus in silicon after ion implantation. The activation rate refers to the ratio of activated impurity number to the total impurity number in the sample. After injecting phosphorus with the dose and energy (energy = 55 keV, dose = 3 1015 cm–2), the samples were annealed at different temperatures, and laser irradiation
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A 16-bit 1 MSPS SAR ADC with foreground calibration and residual voltage shift strategy J. Semicond. Pub Date : 2020-12-18 Xian Zhang; Xiaodong Cao; Xuelian Zhang
In this paper, a 16-bit 1MSPS foreground calibration successive approximation register analog-to-digital converter (SAR ADC) is developed by the CMOS 0.25 μm process. An on-chip all-digital foreground weights calibration technique integrating self-calibration weight measurement with PN port auto-balance technique is designed to improve the performance and lower the costs of the developed SAR ADC. The
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Small molecule donors with different conjugated π linking bridges: Synthesis and photovoltaic properties J. Semicond. Pub Date : 2020-12-18 Xiyue Dong; Dingqin Hu; Pengyu Chen; Xuexin Dai; Chao Hu; Zeyun Xiao; Shirong Lu
Three small molecule (SM) donors, namely B-T-CN, B-TT-CN and B-DTT-CN, with different π conjugated bridges were synthesized in this research. Interestingly, with the conjugated fused rings of the π linking bridge increasing, the SM HOMO levels exhibit a decline tendency with –5.27 eV for B-T-CN, –5.31 eV for B-TT-CN and –5.40 eV for B-DTT-CN. After blending the SM donors with the fullerene acceptor
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The etching process and mechanism analysis of Ta-Sb2Te3 film based on inductively coupled plasma J. Semicond. Pub Date : 2020-12-18 Yongkang Xu; Sannian Song; Wencheng Fang; Chengxing Li; Zhitang Song
Compared to the conventional phase change materials, the new phase change material Ta-Sb2Te3 has the advantages of excellent data retention and good material stability. In this letter, the etching characteristics of Ta-Sb2Te3 were studied by using CF4/Ar. The results showed that when CF4/Ar = 25/25, the etching power was 600 W and the etching pressure was 2.5 Pa, the etching speed was up to 61 nm/min
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A 12-bit 30-MS/s VCO-based SAR ADC with NOC-assisted multiple adaptive bypass windows J. Semicond. Pub Date : 2020-11-07 Xiangxin Pan; Xiong Zhou; Sheng Chang; Zhaoming Ding; Qiang Li
This paper proposes a technique that uses the number of oscillation cycles (NOC) of a VCO-based comparator to set multiple adaptive bypass windows in a 12-bit successive approximation register (SAR) analog-to-digital converter (ADC). The analysis of the number of bit cycles, power and static performance shows that three adaptive bypass windows reduce power consumption, and decrease DNL and have similar
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Challenges and opportunities toward fully automated analog layout design J. Semicond. Pub Date : 2020-11-07 Hao Chen; Mingjie Liu; Xiyuan Tang; Keren Zhu; Nan Sun; David Z. Pan
Realizing the layouts of analog/mixed-signal (AMS) integrated circuits (ICs) is a complicated task due to the high design flexibility and sensitive circuit performance. Compared with the advancements of digital IC layout automation, analog IC layout design is still heavily manual, which leads to a more time-consuming and error-prone process. In recent years, significant progress has been made in automated
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Silicon-based FMCW signal generators: A review J. Semicond. Pub Date : 2020-11-07 Wei Deng; Haikun Jia; Baoyong Chi
FMCW radars with high resolution necessities the generation of highly linear, low phase noise, and low spur chirp signals with large bandwidth and a short modulation period. This paper reviews recent research progress on silicon-based FMCW signal generators, identifies advances in architecture, fundamental design, performance analysis, and applications of the FMCW synthesizer.
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Fast-transient techniques for high-frequency DC–DC converters J. Semicond. Pub Date : 2020-11-07 Lin Cheng; Kui Tang; Wang-Hung Ki; Feng Su
A 30 MHz voltage-mode controlled buck converter with fast transient responses is presented. An improved differential difference amplifier (DDA)-based Type-III compensator is proposed to reduce the settling times of the converter during load transients, and to achieve near-optimal transient responses with simple PWM control only. Moreover, a hybrid scheme using a digital linear regulator with automatic
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A survey of high-speed high-resolution current steering DACs J. Semicond. Pub Date : 2020-11-07 Xing Li; Lei Zhou
Digital to analog converters (DAC) play an important role as a bridge connecting the analog world and the digital world. With the rapid development of wireless communication, wideband digital radar, and other emerging technologies, better performing high-speed high-resolution DACs are required. In those applications, signal bandwidth and high-frequency linearity often limited by data converters are
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A comparative study of digital low dropout regulators J. Semicond. Pub Date : 2020-11-07 Mo Huang; Yan Lu; Rui P. Martins
Granular power management in a power-efficient system on a chip (SoC) requires multiple integrated voltage regulators with a small area, process scalability, and low supply voltage. Conventional on-chip analog low-dropout regulators (ALDOs) can hardly meet these requirements, while digital LDOs (DLDOs) are good alternatives. However, the conventional DLDO, with synchronous control, has inherently slow
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A survey of active quasi-circulators J. Semicond. Pub Date : 2020-11-07 Bingjun Tang; Li Geng
With the development of multi-band wireless communication and the increasing data transmission rate, the circulator as an antenna interface must be able to work in multiple frequency bands and provides large bandwidth. It presents a high challenge to the design of circulators, especially the active quasi-circulators. In this survey, we review the representative active quasi-circulators and summarize
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Error suppression techniques for energy-efficient high-resolution SAR ADCs J. Semicond. Pub Date : 2020-11-07 Jiaxin Liu; Xiyuan Tang; Linxiao Shen; Shaolan Li; Zhelu Li; Wenjuan Guo; Nan Sun
The successive approximation register (SAR) is one of the most energy-efficient analog-to-digital converter (ADC) architecture for medium-resolution applications. However, its high energy efficiency quickly diminishes when the target resolution increases. This is because a SAR ADC suffers from several major error source, including the sampling kT/C noise, the comparator noise, and the DAC mismatch
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CMOS analog and mixed-signal phase-locked loops: An overview J. Semicond. Pub Date : 2020-11-07 Zhao Zhang
CMOS analog and mixed-signal phase-locked loops (PLL) are widely used in varies of the system-on-chips (SoC) as the clock generator or frequency synthesizer. This paper presents an overview of the AMS-PLL, including: 1) a brief introduction of the basics of the charge-pump based PLL, which is the most widely used AMS-PLL architecture due to its simplicity and robustness; 2) a summary of the design
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Effect of microstructure of Au80Sn20 solder on the thermal resistance TO56 packaged GaN-based laser diodes J. Semicond. Pub Date : 2020-09-27 Hao Lin, Deyao Li, Liqun Zhang, Pengyan Wen, Shuming Zhang, Jianping Liu and Hui Yang
Au80Sn20 alloy is a widely used solder for laser diode packaging. In this paper, the thermal resistance of GaN-based blue laser diodes packaged in TO56 cans were measured by the forward voltage method. The microstructures of Au80Sn20 solder were then investigated to understand the reason for the difference in thermal resistance. It was found that the microstructure with a higher content of Au-rich
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Investigation of current collapse and recovery time due to deep level defect traps in β -Ga 2 O 3 HEMT J. Semicond. Pub Date : 2020-09-27 R. Singh, T. R. Lenka, R. T. Velpula, B. Jain, H. Q. T. Bui and H. P. T. Nguyen
In this paper, drain current transient characteristics of β -Ga 2 O 3 high electron mobility transistor (HEMT) are studied to access current collapse and recovery time due to dynamic population and de-population of deep level traps and interface traps. An approximately 10 min, and 1 h of recovery time to steady-state drain current value is measured under 1 ms of stress on the gate and drain electrodes
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Design, modelling, and simulation of a floating gate transistor with a novel security feature J. Semicond. Pub Date : 2020-09-27 H. Zandipour and M. Madani
This study proposes a new generation of floating gate transistors (FGT) with a novel built-in security feature. The new device has applications in guarding the IC chips against the current reverse engineering techniques, including scanning capacitance microscopy (SCM). The SCM measures the change in the C–V characteristic of the device as a result of placing a minute amount of charge on the floating
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Defect levels in d-electron containing systems: Comparative study of CdTe using LDA and LDA + U J. Semicond. Pub Date : 2020-09-27 Yuan Yin, Yu Wang, Guangde Chen and Yelong Wu
The defect properties in d -electron containing materials will be strongly influenced by the non-negligible on-site Coulomb interactions. However, this has been omitted in the current widely adopted standard first-principles calculations, such as LDA, leading to a large deviation of calculated results. Therefore, as a comparative case study, in this paper the defects of CdTe are investigated by first-principles
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4H-SiC trench MOSFET with an integrated Schottky barrier diode and L-shaped P + shielding region J. Semicond. Pub Date : 2020-09-27 Xiaorong Luo, Ke Zhang, Xu Song, Jian Fang, Fei Yang and Bo Zhang
A novel 4H-SiC trench MOSFET is presented and investigated by simulation in this paper. The device features an integrated Schottky barrier diode and an L-shaped P + shielding region beneath the gate trench and aside one wall of the gate trench (S-TMOS). The integrated Schottky barrier diode works as a free-wheeling diode in reverse recovery and reverse conduction, which significantly reduces reverse
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Study of electrophysical properties of metal–semiconductor contact by the theory of complex systems J. Semicond. Pub Date : 2020-09-27 Sh. G. Askerov, L. K. Abdullayeva and M. G. Hasanov
The purpose of this work is to analyze the electrical properties of the metal–semiconductor contact (MSC) in the framework of the theory of complex systems. The effect of inhomogeneity of the different microstructures: polycrystalline, monocrystalline, amorphous metal–semiconductor contact surface is investigated, considering a Schottky diode (SD) as a parallel connection of numerous subdiodes. It
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Silicon photonic transceivers for application in data centers J. Semicond. Pub Date : 2020-09-27 Haomiao Wang, Hongyu Chai, Zunren Lv, Zhongkai Zhang, Lei Meng, Xiaoguang Yang and Tao Yang
Global data traffic is growing rapidly, and the demand for optoelectronic transceivers applied in data centers (DCs) is also increasing correspondingly. In this review, we first briefly introduce the development of optoelectronics transceivers in DCs, as well as the advantages of silicon photonic chips fabricated by complementary metal oxide semiconductor process. We also summarize the research on
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Wireless communication and wireless power transfer system for implantable medical device J. Semicond. Pub Date : 2020-09-27 Zhang Zhang, Chao Chen, Tairan Fei, Hao Xiao, Guangjun Xie and Xin Cheng
Traditional magnetically coupled resonant wireless power transfer technology uses fixed distances between coils for research, to prevent fluctuations in the receiving voltage, and lead to reduce transmission efficiency. This paper proposes a closed-loop control wireless communication wireless power transfer system with a wearable four-coil structure to stabilize the receiving voltage fluctuation caused
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A 0.5–3.0 GHz SP4T RF switch with improved body self-biasing technique in 130-nm SOI CMOS J. Semicond. Pub Date : 2020-09-27 Hao Zhang, Qiangsheng Cui, Xu Yan, Jiahui Shi and Fujiang Lin
A single-pole four-throw (SP4T) RF switch with charge-pump-based controller is designed and implemented in a commercial 130-nm silicon-on-insulator (SOI) CMOS process. An improved body self-biasing technique based on diodes is utilized to simplify the controlling circuitry and improve the linearity. A multistack field-effect-transistor (FET) structure with body floating technique is employed to provide
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Nanoflower ZnO thin-film grown by hydrothermal technique based Schottky diode J. Semicond. Pub Date : 2020-09-27 Ghusoon M. Ali, Ahmed K. Khalid and Salah M. Swadi
This paper reports the realization of planar Schottky diodes based on nanorod ZnO thin film. The nanorod ZnO thin film was fabricated by hydrothermal technique on boron doped p-type Si (100) substrate. The Ag//ZnO/Al planar diode operating with voltage bias from –3 to 3 V. The I – V characteristics clearly indicate that the devices have rectifying performance. The thermionic emission theory governs
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Design of CMOS active pixels based on finger-shaped PPD J. Semicond. Pub Date : 2020-09-27 Feng Li, Ruishuo Wang, Liqiang Han and Jiangtao Xu
To improve the full-well capacity and linear dynamic range of CMOS image sensor, a special finger-shaped pinned photodiode (PPD) is designed. In terms of process, the first N-type ion implantation of the PPD N buried layer is extended under the transfer gate, thereby increasing the PPD capacitance. Based on TCAD simulation, the width and spacing of PPD were precisely adjusted. A high full-well capacity
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First principles study of the electronic structure and photovoltaic properties of β -CuGaO 2 with MBJ + U approach J. Semicond. Pub Date : 2020-09-27 Guoping Luo, Yingmei Bian, Ruifeng Wu, Guoxia Lai, Xiangfu Xu, Weiwei Zhang and Xingyuan Chen
Based on the density functional theory, the energy band and electronic structure of β -CuGaO 2 are calculated by the modified Becke-Johnson plus an on-site Coulomb U (MBJ + U ) approach in this paper. The calculated results show that the band gap value of β -CuGaO 2 obtained by the MBJ + U approach is close to the experimental value. The calculated results of electronic structure indicate that the
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Suppression of oxygen and carbon impurity deposition in the thermal system of Czochralski monocrystalline silicon J. Semicond. Pub Date : 2020-09-27 Jing Zhang, Ding Liu and Yani Pan
When preparing large monocrystalline silicon materials, severe carbon etching and silicide deposition often occur to the thermal system. Therefore, a suppression method that optimizes the upper insulation structure has been proposed. Assisted by the finite element method, we calculated temperature distribution and carbon deposition of heater and heat shield, made the rule of silicide and temperature
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A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure J. Semicond. Pub Date : 2020-09-27 Chenxia Wang, Jie Wei, Diao Fan, Yang Yang and Xiaorong Luo
A novel 600 V snapback-free high-speed silicon-on-insulator lateral insulated gate bipolar transistor is proposed and investigated by simulation. The proposed device features an embedded NPN structure at the anode side, and double trenches together with an N-type carrier storage (N-CS) layer at the cathode side, named DT-NPN LIGBT. The NPN structure not only acts as an electron barrier to eliminate
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Comparative study of various methods for extraction of multi- quantum wells Schottky diode parameters J. Semicond. Pub Date : 2020-09-27 Elyes Garoudja, Walid Filali, Slimane Oussalah, Noureddine Sengouga and Mohamed Henini
In this work, forward current voltage characteristics for multi-quantum wells Al 0.33 Ga 0.67 As Schottky diode were measured at temperature ranges from 100 to 300 K. The main parameters of this Schottky diode, such as the ideality factor, barrier height, series resistance and saturation current, have been extracted using both analytical and heuristics methods. Differential evolution (DE), particle
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Recent progress in organic electrodes for zinc-ion batteries J. Semicond. Pub Date : 2020-09-10 Shuaifei Xu, Mingxuan Sun, Qian Wang and Chengliang Wang
Organic zinc-ion batteries (OZIBs) are emerging rechargeable energy storage devices and have attracted increasing attention as one of the promising alternatives of lithium-ion batteries, benefiting from the Zn metal (low cost, safety and small ionic size) and organic electrodes (flexibility, green and designable molecular structure). Organic electrodes have exhibited fine electrochemical performance
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Typical strategies to facilitate charge transfer for enhanced oxygen evolution reaction: Case studies on hematite J. Semicond. Pub Date : 2020-09-10 Aizhen Liao, Huichao He, Yong Zhou and Zhigang Zou
Hydrogen can be sustainably produced through photoelectrochemical (PEC) water splitting. The process of PEC water splitting is composed of two vital half-reactions: water oxidation to O 2 on photoanode, and proton reduction to H 2 on photocathode. Both in thermodynamics and kinetics, the oxidation of water on photoanode is much more challenging, because the formation of O 2 involves the four-holes
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Rational design of multinary copper chalcogenide nanocrystals for photocatalytic hydrogen evolution J. Semicond. Pub Date : 2020-09-10 Hao Fu and Aiwei Tang
Photocatalytic hydrogen evolution is one of the most promising ways to solve environmental problems and produce a sustainable energy source. To date, different types of photocatalysts have been developed and widely used in photocatalytic hydrogen evolution. Recently, multinary copper chalcogenides have attracted much attention and exhibited potential applications in photocatalytic hydrogen evolution
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Engineering the photoelectrochemical behaviors of ZnO for efficient solar water splitting J. Semicond. Pub Date : 2020-09-10 Mengmeng Ma, Yanbin Huang, Jun Liu, Kong Liu, Zhijie Wang, Chao Zhao, Shengchun Qu and Zhanguo Wang
Solar water splitting is a promising strategy for the sustainable production of renewable hydrogen and solving the world’s crisis of energy and environment. The third-generation direct bandgap semiconductor of zinc oxide (ZnO) with properties of environmental friendliness and high efficiency for various photocatalytic reactions, is a suitable material for photoanodes because of its appropriate band
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Metal-organic framework composites for energy conversion and storage J. Semicond. Pub Date : 2020-09-10 Hang Wang, Na Zhang, Shumin Li, Qinfei Ke, Zhengquan Li and Min Zhou
Metal-organic frameworks (MOFs) with orderly porous structure, large surface area, high electrochemical response and chemical tunability have been widely studied for energy conversion and storage. However, most reported MOFs still suffer from poor stability, insufficient conductivity, and low utilization of active sites. One strategy to circumvent these issues is to optimize MOFs via designing composites
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Regulation of surface properties of photocatalysis material TiO 2 by strain engineering J. Semicond. Pub Date : 2020-09-10 Jian Zheng and Dajun Shu
As a promising photocatalysis material, TiO 2 has long been studied by experimental and theoretical methods. The external strain could affect the catalytic reactivity of TiO 2 significantly due to the difference in surface elastic properties of different surface structures with different surface adsorption or defects. This article reviews our recent work by using density function theory calculations
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Recent progress on nanostructured bimetallic electrocatalysts for water splitting and electroreduction of carbon dioxide J. Semicond. Pub Date : 2020-09-10 Can Cui, Xiaosong Hu and Liaoyong Wen
The exploitation of renewable energy as well as the elimination of the harmful impact of excessive carbon emission are worldwide concerns for sustainable development of the ecological environment on earth. To address that, the technologies regarding energy conversion systems, such as water splitting and electroreduction of carbon dioxide, have attracted significant attention for a few decades. Yet
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Highly-rough surface carbon nanofibers film as an effective interlayer for lithium–sulfur batteries J. Semicond. Pub Date : 2020-09-10 Hongfan Zhu, Mo Sha, Huaping Zhao, Yuting Nie, Xuhui Sun and Yong Lei
Lithium–sulfur (Li–S) battery with a new configuration is demonstrated by inserting a flexible nitrogen-doping carbon nanofiber (N-CNFs) interlayer between the sulfur cathode and the separator. The N-CNFs film with high surface roughness and surface area is fabricated by electrospinning and a subsequent calcination process. The N-CNFs film interlayer not only effectively traps the shuttling migration
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Optoelectronic and photocatalytic properties of I–III–VI QDs: Bridging between traditional and emerging new QDs J. Semicond. Pub Date : 2020-09-10 Yanhong Liu, Fenghua Li, Hui Huang, Baodong Mao, Yang Liu and Zhenhui Kang
Due to the quantum size effect and other unique photoelectric properties, quantum dots (QDs) have attracted tremendous interest in nanoscience, leading a lot of milestone works. Meantime, the scope and scientific connotation of QDs are constantly expanding, which demonstrated amazing development vitality. Besides the well-developed Cd-containing II–VI semiconductors, QDs of environmentally friendly
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Perylene diimide self-assembly: From electronic structural modulation to photocatalytic applications J. Semicond. Pub Date : 2020-09-10 Weiqin Wei, Shuxin Ouyang and Tierui Zhang
As an emerging organic semiconductor, perylene diimide (PDI) self-assembly has attracted tremendous attention in the aspects of solar cells, sensors, fluorescence probes and n-transistors, etc. In term of photocatalysis, various photocatalysts based on PDI self-assembly exhibit some unique properties, such as intrinsic Π-Π stacking structure, fast internal charge transfer, band-like electronic structure
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High-performance junction field-effect transistor based on black phosphorus/ β -Ga 2 O 3 heterostructure J. Semicond. Pub Date : 2020-08-13 Chang Li, Cheng Chen, Jie Chen, Tao He, Hongwei Li, Zeyuan Yang, Liu Xie, Zhongchang Wang and Kai Zhang
Black phosphorous (BP), an excellent two-dimensional (2D) monoelemental layered p-type semiconductor material with high carrier mobility and thickness-dependent tunable direct bandgap structure, has been widely applied in various devices. As the essential building blocks for modern electronic and optoelectronic devices, high quality PN junctions based on semiconductors have attracted widespread attention
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Controlled growth of Mo 2 C pyramids on liquid Cu surface J. Semicond. Pub Date : 2020-08-13 Yixuan Fan, Le Huang, Dechao Geng and Wenping Hu
Precise spatial control of 2D materials is the key capability of engineering their optical, electronic, and mechanical properties. However, growth of novel 2D Mo 2 C on Cu surface by chemical vapor deposition method was revealed to be seed-induced 2D growth, limiting further synthesis of complex Mo 2 C spatial structures. In this research, we demonstrate the controlled growth of Mo 2 C pyramids with
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Recent progress in 2D group-V elemental monolayers: fabrications and properties J. Semicond. Pub Date : 2020-08-13 Peiwen Yuan, Teng Zhang, Jiatao Sun, Liwei Liu, Yugui Yao and Yeliang Wang
A large number of two-dimensional (2D) monoelemental materials with huge application potentials have been developed, since graphene was reported as a monoelemental material with unique properties. As cousins of graphene, 2D group-V elemental monolayers have gained tremendous interest due to their electronic properties with significant fundamental bandgap. In this review, we extensively summarize the
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Tellurene: An elemental 2D monolayer material beyond its bulk phases without van der Waals layered structures J. Semicond. Pub Date : 2020-08-13 Xiaolin Cai, Xiaoyu Han, Chunxiang Zhao, Chunyao Niu and Yu Jia
Due to the quantum confinement effect, atomically thin two-dimensional (2D) monolayer materials possess distinct characteristics from their corresponding bulk materials, which have received wide attention from science and industry. Among all the 2D materials, elemental 2D materials with the simplest components are most striking. As an emerging group-VIA elemental 2D monolayer material, tellurene exhibits
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Physical vapor deposited 2D bismuth for CMOS technology J. Semicond. Pub Date : 2020-08-13 Hanliu Zhao, Xinghao Sun, Zhengrui Zhu, Wen Zhong, Dongdong Song, Weibing Lu and Li Tao
Two-dimensional (2D) bismuth, bismuthene, is an emerging pnictogen family member that has received increasing research attention in the past few years, which could yield exotic electrical, thermal, and optical properties due to unique band structure. This review provides a holistic view of recent research advances on 2D bismuth material synthesis and device applications in complementary metal oxide
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