Abstract A computational algorithm is presented for determining the modes of thermoelectric cooling that ensure the given temperature difference of the base of the heat-loaded element and the environment. The obtained analytical expressions make it possible to determine the power supply current of the thermoelectric module taking into account its operating characteristics, thermal resistance of the

Abstract The spectral characteristics of a microdisk in a diamond substrate with metal gates are simulated. It is shown that the radiative quality factor of a microdisk depends on the parameters of the substrate and the gates. Q-factor oscillations are detected with increasing distance between the disk and the substrate. The spectroscopic response of a microdisk with an NV center is obtained, and the

Abstract In the kinetic approach, the electrical conductivity of a thin conducting tube is calculated using diffuse boundary conditions for the distribution function. The case of an anisotropic isoenergetic surface of a conductor having the form of a triaxial ellipsoid, one of the axes of which is parallel to the axis of the tube, is considered. The dependences of the modulus and the conductivity argument

Abstract The parameters of high-voltage LDMOS transistors on a silicon structure on an insulator formed in a technological cycle combined with the manufacturing technology of low-voltage CMOS LSI are investigated. LDMOS transistors are studied under conditions of the temperature changing in the range –60 to 300°C and exposure to ionizing radiation.

Abstract The physical parameters of the silicon noise-generator diodes manufactured on single-crystalline silicon substrates by planar technology are studied by the method of the measurement of the current–voltage characteristics (I–V curves) and capacity–voltage characteristics (C–V curves). It is found that the value of the reverse current in the generator diodes is determined by ionization of the

Abstract The dielectric properties and ac conductivity of an electronically irradiated layered TlGaS2 single crystal are studied in the frequency range of 5 × 104–3.5 × 107 Hz. It is established that electron irradiation of TlGaS2 single crystal samples with doses of 2 × 10l2 to 2.4 × 1013 e/cm2 leads to a decrease in the real component (ε') of the complex dielectric permittivity in a high-frequency

Abstract A capacitive type MEMS switch with electrostatic control is presented. A movable electrode is made in the form of a beam fixed at both ends. A metal electrode with a floating potential which allows increasing the ratio of the capacities in the on and off states by more than an order of magnitude compared to the classical design is considered a feature of the device. The operating characteristics

Abstract The effect of the O2/Ar component ratio in the CHF3 + O2 + Ar mixture on the electrical parameters of the plasma, kinetics of active particles, and their stationary concentrations under the high-frequency (13.56 MHz) induction discharge is investigated. Using jointly the plasma diagnostics and simulation techniques, (i) features of the plasma composition in the oxygen-free system CHF3 + Ar

Abstract Samples of nonvolatile electrically reprogrammable memory elements (memristors) based on electroformed TiN–TiO2–SiO2–W open sandwich structures, made using thin-film technology, are studied. A technique is developed and experimental studies are performed of the effect of oxygen pressure over the surface of the insulating gap of structures and the current limiting mode during the action of

Abstract The article studies a triode for vacuum microelectronics with horizontal geometry (planar triode). A simple theoretical model of the device is proposed and the minimum cutoff voltage is calculated. Experiments are carried out on the fundamental model of the device, which qualitatively confirm the main theoretical conclusions.

Abstract A study was made of the dependence of the contrast value of a negative electron resist based on hydrogen-silsesquioxane (HSQ) in the process of the development of NaOH–NaCl in an aqueous alkaline-salt solution at various temperatures. When the temperature of the developer rises from 22 to 40°C the contrast increases by 45%. An increase in contrast was also found with a decrease in the developing

Abstract The comparative research of the parameters, steady-state composition, and the effects of heterogeneous interaction in the plasma of fluorocarbon gases CxHyFz with various z/x relations in conditions of an induction RF (13.56 MHz) discharge is carried out. The binary systems CxHyFz + Ar based on CF4 (z/x = 4), CHF3 (z/x = 3), and C4F8 (z/x = 2) are used as the subjects of research. Through

Abstract The results of the TCAD (Technology Computer Aided Design) simulation of 65-nm bulk CMOS combinational logical elements of a triple majority gate (TMG) for a reliable microprocessor redundant system are presented. The AND and the OR logic elements, each of which consists of NAND and NOR elements and pairs of inverters, topologically located before and after the line of transistors of each

Abstract A simple phenomenological model for estimating a drift velocity peak in transistor heterostructures with the strong electron localization in the channel is developed using a self-consistent solution of the Schrödinger and Poisson equations and a system of hydrodynamic equations. It is shown that, when an electron enters the region of a strong field, the donor–acceptor doping increases the

Abstract The approaches used to the form electrically conductive structures on aluminum and anodized aluminum substrates using such photoresists as synthesized triacrylamide polyfluorochalcone (TAFCh) and commercial SU-8 are investigated. The effect of adding HF to anodizing and copper-plating electrolytes on the formation of the microstructure of conductive copper films is studied. The experiments

Abstract The article presents the features of using the through reactive ion etching of quartz membranes with a thickness of 20 μm or more in the technology of the group manufacturing of pendulums of Q-flex accelerometers. A comparative analysis of the thin-film masking material (aluminum, chromium, titanium, copper, nickel) for the through reactive ion etching of quartz by the selectivity parameters

Abstract Using Monte Carlo simulations, we studied the effect of readsorption on the growth rate and morphology of AIIIBVnanowires. It is demonstrated that readsorption of arsenic leads to an increase in the growth rate and premature consumption of a seed drop. The reabsorption of metal atoms leads to a slowdown in the axial growth but prolongs the growth, since it prevents the droplet from disappearing

Abstract The synthesis of energy-efficient electronic flip-flop circuits based on the application of arrays of p- and n-channel MOS transistors located in the upper and lower half-planes of the circuit is considered. A method is proposed for synthesizing D, RS, and JK flip-flop circuits using a truth table, direct and inverted minterm maps, and expressions describing the transistor arrays. Variants

Abstract The modern designs of magnetic field transducers (MFTs) based on nanostructures with the spin-tunnel magnetoresistive effect (STMR) and the main areas of their application are considered. The results of an experimental study of two constructive versions of magnetic field transducers with an even and odd output characteristic are presented. The sensitivity of the fabricated MFT model based

Abstract The parameters of recombination centers in silicon photodiodes are studied before and after gamma irradiation. The technique of investigation is deep-level recombination spectroscopy. It is shown that, after irradiation, both the forward-bias and reverse-bias currents through the p–n junction increase, which is explained by the growth in the concentration of recombination centers due to the

Abstract We test the durability of the simplest AVR ATtiny13A microcontroller (from Atmel) to the effects of single voltage pulses depending on the input-output port configuration. The dependence of the impulse electric strength of the microcontroller on the operation mode of the ports is discovered.

Abstract The influence of the type of active gas and the ratio of the concentration of the components of the CF4 + Ar, Cl2 + Ar, and HBr + Ar mixtures on the parameters of the plasma, steady-state concentrations of the active particles, and kinetics of reactive-ion etching of SiO2 is investigated. It is demonstrated that the rate of etching SiO2 decreases in the CF4–Cl2–HBr series and is characterized

Abstract A circuit of a measuring chip for determining an arbitrary pure state of a charge qubit is proposed. The strength of the current flowing through a single-electron transistor in the steady-state mode depends on the state of the qubit. To enhance the sensitivity of the transistor, its working part is built from three quantum dots (QDs) with the energy levels forming a symmetric configuration

Abstract The characteristics of cooling and thermal control systems are calculated depending on the parameters of the thermoelectric module and the heat-loaded element. The values of the temperature difference in the heat distributor for a thermoelectric module with dimensions 30 × 30 mm2 and 40 × 40 mm2 are determined. The significant effect of the inhomogeneity of the heat flux and the temperature

Abstract This review describes general approaches for the simulation exposure and development stages of e-beam lithography (EBL). The general models of elastic and inelastic electron interactions with matter, which are used for the simulation of the EBL exposure stage, are presented. The empirical and theoretical models of the resist’s dissolution in wet developers are provided for the simulation of

Abstract— The theoretical models of IrSi nanoparticles are constructed and the electronic structure of IrSi nanoparticles is characterized via a semi-empirical expanded Hüсkel molecular orbital method (EHM). The orbital energies, ionization potential, full electronic energy, Young modulus, and hardness of IrSi nanoparticles are calculated based on the theoretical approaches. Forming electrophilic semiconducting

Abstract— The market for MEMS microphones is growing every year. The aggregate average annual growth rate is 11.7%. This is due to the increase in devices using voice control, the increase in the number of microphones in smartphones, and the increasing role of MEMS microphones in the Internet of Things. A MEMS microphone consists of a MEMS element for converting acoustic pressure, a preamplification

Abstract A numerical analysis of the phase-matching conditions during the incidence of one or two counterpropagating laser beams on an ordered array of single-walled carbon nanotubes (CNTs) is performed. The conditions for the generation of slow surface plasmon waves of the terahertz (THz) and far infrared range propagating along the nanotubes of the irradiated array are determined. It is shown that

Abstract The parallel automaton is considered which is the functional model of a discrete control device which allows taking into account the parallel character of logical control devices. The verification of parallel automata lies in testing all transitions in the graph of the complete states of automata and is conducted based on simulation. The software tools for constructing the compact tests for