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Simulation of the Radio Absorbing Properties of Pyrolyzed Polyacrylonitrile in the Frequency Range from 3 to 50 GHz Russ. Microelectron. Pub Date : 2024-03-05 D. P. Radchenko, I. V. Zaporotskova, L. V. Kozhitov, P. A. Zaporotskov, A. V. Popkova, V. G. Kosushkin
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Simulation Modeling of an Analog Impulse Neural Network Based on a Memristor Crossbar Using Parallel Computing Technologies Russ. Microelectron. Pub Date : 2024-03-05 A. Yu. Morozov, K. K. Abgaryan, D. L. Reviznikov
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Modeling a Broadband Amplifier on a Printed Circuit Board with an Increased Conductivity Dielectric Russ. Microelectron. Pub Date : 2024-02-15 D. A. Abrameshin, E. D. Pozhidaev, V. S. Saenko, S. R. Tumkovskiy
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Conductivity Switching in Lateral Channels Based on MXene Ti3C2Tx Russ. Microelectron. Pub Date : 2024-02-15 N. V. Yakunina, N. P. Nekrasov, V. K. Nevolin, I. I. Bobrinetskiy
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Investigation of the Electrochemical Properties of the Anode of Na-Ion Battery Based on Nanotubular Anodic TiO2 Russ. Microelectron. Pub Date : 2024-02-15 D. A. Dronova, A. A. Dronov
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Features of the Formation of Suspended Graphene Structures over an Array of Microsized Pores Russ. Microelectron. Pub Date : 2024-02-15 K. A. Tsarik, N. P. Nekrasov, V. K. Nevolin, I. I. Bobrinetskiy
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Investigating the Capabilities of Recurrent Neural Networks for Solving the Problem of Classifying Poorly Structured Information on the Example of Bibliographic Data Russ. Microelectron. Pub Date : 2024-02-15 E. N. Petrov, E. M. Portnov
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Fatigue Analysis and Estimation of the Number of Exposure Cycles until the Failure of the Sensitive Element of a Micromechanical Capacitive Accelerometer Russ. Microelectron. Pub Date : 2024-02-15 Ye Ko Ko Aung, B. M. Simonov, S. P. Timoshenkov
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Circuit Implementation of Modular Adders in Custom CMOS VLSI and FPGA Russ. Microelectron. Pub Date : 2024-02-15 P. N. Bibilo, N. A. Kirienko
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White Noise Suppression Based on Wiener Filtering Using Neural Network Technologies in the Domain of the Discrete Wavelet Transform Russ. Microelectron. Pub Date : 2024-02-15 K. A. Alimagadov, S. V. Umnyashkin
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Research on Testing Methods of SINAD Analog-to-Information Converters Russ. Microelectron. Pub Date : 2024-02-15 M. N. Polunin, V. V. Losev, Yu. A. Chaplygin
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Predictive Control System of a DC-DC Boost Converter with Optimization of the Operating Frequency Russ. Microelectron. Pub Date : 2024-02-15 A. A. Cherdintsev
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Erratum to: Design of a Nonlinear Model of a Pseudomorphic 0.15 µm рHEMT AlGaAs/InGaAs/GaAs Transistor Russ. Microelectron. Pub Date : 2024-02-08 D. Tsunvaza, R. V. Ryzhuk, I. S. Vasil’evskii, N. I. Kargin, V. A. Klokov
An Erratum to this paper has been published: https://doi.org/10.1134/S1063739723900043
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Probe and Spectral Diagnostics of the Plasma of the BCl3–Cl2 Gas Medium Russ. Microelectron. Pub Date : 2024-02-08 D. B. Murin, I. A. Chesnokov, I. A. Gogulev, A. E. Grishkov
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Performance Calculation for a MEMS Switch with a Floating Electrode Russ. Microelectron. Pub Date : 2024-02-08 M. O. Morozov, I. V. Uvarov
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Design of Integrated Voltage Multipliers Using Standard CMOS Technologies Russ. Microelectron. Pub Date : 2024-02-08 A. S. Sinyukin, B. G. Konoplev, A. V. Kovalev
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Performance Estimation and Application of Analog Device using 32 nm CNFET Russ. Microelectron. Pub Date : 2024-02-08 S. K. Tripathi, Raju Patel, Deepak Agrawal, Manoj Singh Adhikari
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Implementation of an LNA Using a Microstrip Coupler as a DC-Block for Sub-6 5G Communication Systems Russ. Microelectron. Pub Date : 2024-02-08 Mohamed Boumalkha, Mohammed Lahsaini, Hafid Griguer, Otman El Mrabet, Taj Eddin Elhamadi, Moulay El Hassane Archidi, Jamal EL Aoufi, Mohamed Taouzari
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Optically Pumped Bipolar Transistor Russ. Microelectron. Pub Date : 2024-02-08 Yu. K. Al’tudov, D. S. Gaev, A. V. Pskhu, S. Sh. Rekhviashvili
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Prototypes of Devices for Heterogeneous Hybrid Semiconductor Electronics with an Embedded Biomolecular Domain Russ. Microelectron. Pub Date : 2024-02-08 M. A. Baranov, E. K. Karseeva, O. Yu. Tsybin
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Tapered Silicon Oxide Etching for Creation of Capacitor Structures for Measurement of Dielectric Characteristics Russ. Microelectron. Pub Date : 2024-02-08 A. V. Miakonkikh, V. O. Kuzmenko, A. E. Melnikov, K. V. Rudenko
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MEMS Switch Based on a Cantilever with Increased Contact Force Russ. Microelectron. Pub Date : 2024-02-08 I. A. Belozerov, I. V. Uvarov
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Simulation of a Vertical Ballistic Quantum-Barrier Field-Effect Transistor Based on an Undoped AlxGa1–xAs Quantum Nanowire Russ. Microelectron. Pub Date : 2024-02-08 D. V. Pozdnyakov, A. V. Borzdov, V. M. Borzdov
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Mathematical Modeling of the Metrical Parameters of Hexagonal Closely Packed Metals Russ. Microelectron. Pub Date : 2023-12-01
Abstract— The electronic, magnetic, mechanical, and other properties of crystalline substances are determined by their structure, i.e., by the periodicity and symmetry of the lattice; therefore, the determination of the structure is an important stage in the study of the characteristics of such materials. This paper considers a number of metals having a crystal lattice of the hexagonal closely packed
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Quantum Mechanical Simulation of Polarization Switching in HfO2 Crystals Russ. Microelectron. Pub Date : 2023-12-01
Abstract Int this paper, we study the process of changing the polarization of hafnium oxide crystals in the orthorhombic phase associated with the gradual weakening of polarization effects in FeRAM elements based on thin films of hafnium oxide HfO2. To solve the problem, quantum mechanical calculations of the structure of orthorhombic hafnium oxide are performed, a possible way of crystal restructuring
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Failure-Tolerant Self-Timed Circuits Russ. Microelectron. Pub Date : 2023-12-01
Abstract The article considers the problem of developing synchronous and self-timed (ST) circuits that are tolerant to failures. Redundant ST coding and two-phase discipline ensures that ST circuits are more tolerant to soft errors than synchronous counterparts. Duplicating ST channels instead of tripling reduces the failure-tolerant ST circuit’s hardware redundancy and retains its reliability in higher
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Technique for Iterative Refinement of Parameter Values in Analytical Models of Microelectronic Devices Russ. Microelectron. Pub Date : 2023-12-01
Abstract— The physical models of MOS transistors used in the design of modern integrated circuits are accurate, which makes it possible to simulate their operation with the given degree of reliability, but they are highly complex. Therefore, less accurate but more compact analytical models of transistors and devices based on them are usually used. However, in the calculations and evaluation, the values
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Features of Obtaining Composite Electrode Material of a CNT/RuO2·xH2O Supercapacitor by Electrophoretic Codeposition Russ. Microelectron. Pub Date : 2023-12-01
Abstract For the solution of the problem of energy storage, new and more efficient functional electrode materials for electrochemical devices such as supercapacitors and their formation technologies are being developed. In particular, using the method of electrolyte-free electrophoretic codeposition, a composite material of carbon nanotubes (CNTs)/RuO2·xH2O with high specific capacitance and power
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Erratum to: Simulation of a System of Nanoantennas Located in a TSV Channel as a System for Receiving and Transmitting Data Russ. Microelectron. Pub Date : 2023-12-01
An Erratum to this paper has been published: https://doi.org/10.1134/S1063739723900031
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Design and Evaluation of Low Power CMOS Based Schmitt Trigger Circuits Russ. Microelectron. Pub Date : 2023-12-01
Abstract The requirement of high speed low power square wave generators that yield spike free signal enabled the design of Schmitt trigger circuit. The designs BJT or FET based circuits have disadvantages like spikes in output signal cannot be suppressed, the output signal gain control is required, low packing density, considerable power dissipation, etc. This has paved way to development of CMOS based
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Electrophysical Parameters of PIN Photodiodes Irradiated with 60Co γ-Quanta Russ. Microelectron. Pub Date : 2023-12-01
Abstract The results of studies of the changes in the electrophysical parameters of PIN photodiodes made on monocrystalline silicon wafers of the p-type of conductivity of orientation (100) with ρ = 1000 Ohm cm, when irradiated with γ-quanta from a 60Co source, are presented. It is established that as a result of the irradiation of the PIN photodiodes doses up to 2 × 1015 quanta/cm2 results in an increase
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Electrophysical Parameters and Emission Spectra of the Glow Discharge of Difluorodichloromethane Russ. Microelectron. Pub Date : 2023-11-01 D. B. Murin, I. A. Chesnokov, I. A. Gogulev, A. E. Grishkov
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The Influence of Small F2, H2, and HF Additives on the Concentration of Active Particles in Tetrafluoromethane Plasma Russ. Microelectron. Pub Date : 2023-11-01 A. M. Efremov, S. A. Smirnov, V. B. Betelin
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Simulation of the Effect of Lattice Defects on the Work of Joined Materials Separation Russ. Microelectron. Pub Date : 2023-11-01 T. M. Makhviladze, M. E. Sarychev
Abstract In order to study the strength reliability of interconnections, a generalized model for quantifying the effect of nonequilibrium point crystal defects on the value of the work of the reversible separation of joined materials along the boundary (interface) of their union, generalizing an approach proposed previously by the authors to the description of the mechanism of defect adsorption in
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Protective Free-Standing Films for Projection Lithography Installations in the Extreme UV Range Russ. Microelectron. Pub Date : 2023-11-01 S. Yu. Zuev, A. Ya. Lopatin, V. I. Luchin, N. N. Salashchenko, N. N. Tsybin, N. I. Chkhalo
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Study and Analysis of NBTI Effect on pMOSFET Using Fast Measurement Technique Russ. Microelectron. Pub Date : 2023-11-01 Abdelmadjid Benabdelmoumene, Boualem Djezzar, Dhiaelhak Messaoud, Mohamed Boubaaya, Amel Chenouf, Boumediene Zatout
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Effect of the Material of Electrodes on Electroformation and Properties of Memristors Based on Open Metal–SiO2–Metal Sandwich Structures Russ. Microelectron. Pub Date : 2023-11-01 V. M. Mordvintsev, S. E. Kudryavtsev, V. V. Naumov, E. S. Gorlachev
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An Overview of the NBTI Phenomenon in MOS Devices Russ. Microelectron. Pub Date : 2023-11-01 DhiaElhak Messaoud, Boualem Djezzar, Abdelkader Zitouni
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Influence of Hot Carrier Degradation on the Characteristics of a High-Voltage SOI Transistor with a Large Drift Region Russ. Microelectron. Pub Date : 2023-11-01 A. S. Novoselov, N. V. Masalskii
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Neuromorphic Systems: Devices, Architecture, and Algorithms Russ. Microelectron. Pub Date : 2023-11-01 K. A. Fetisenkova, A. E. Rogozhin
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Tomography of Detectors Taking Dead Time into Account Russ. Microelectron. Pub Date : 2023-10-01 Yu. I. Bogdanov, K. G. Katamadze, N. A. Borshchevskaya, G. V. Avosopiants, N. A. Bogdanova, S. P. Kulik, V. F. Lukichev
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Effect of Magnetron Sputtering Power on ITO Film Deposition at Room Temperature Russ. Microelectron. Pub Date : 2023-10-01 A. V. Saenko, Z. E. Vakulov, V. S. Klimin, G. E. Bilyk, S. P. Malyukov
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Formation of Polymer Threads with a Nanosized Aluminum Topology Russ. Microelectron. Pub Date : 2023-10-01 P. P. Maltsev, A. A. Ganzha, V. Yu. Pavlov, A. O. Mikhalev, A. I. Kozlitin
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Study of the Sensitive Region of a MOS Transistor to the Effects of Secondary Particles Arising from Ionizing Radiation Russ. Microelectron. Pub Date : 2023-10-01 A. A. Glushko, S. A. Morozov, M. G. Chistyakov
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Simulation of Silicon FETs with a Fully Enclosed Gate with a High-k Gate Dielectric Russ. Microelectron. Pub Date : 2023-10-01 N. V. Masalskii
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Optoelectronic Properties of Benzimidazobenzophenanthroline Thin Film Russ. Microelectron. Pub Date : 2023-10-01 Dyari Mustafa Mamand, Hiwa Mohammad Qadr
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Single Event Displacement Effects in a VLSI Russ. Microelectron. Pub Date : 2023-10-01 A. I. Chumakov
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Polymer Liners with Cu-MWCNT based HCTSVs to Reduce Crosstalk Effects Russ. Microelectron. Pub Date : 2023-10-01 Katepogu Rajkumar, G. Umamaheswara Reddy
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Study of the Sensor Properties of Ordered ZnO Nanorod Arrays for the Detection of UV Radiation Russ. Microelectron. Pub Date : 2023-10-01 M. V. Evstafieva, M. A. Knyazev, V. I. Korepanov, A. N. Red’kin, D. V. Roschupkin, E. E. Yakimov
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Influence of Structural Defects on the Electrophysical Parameters of pin-Photodiodes Russ. Microelectron. Pub Date : 2023-10-01 N. S. Koval’chuk, S. B. Lastovskii, V. B. Odzhaev, A. N. Petlitskii, V. S. Prosolovich, D. V. Shestovsky, V. Yu. Yavid, Yu. N. Yankovskii
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Concentration of Fluorine Atoms and Kinetics of Reactive-Ion Etching of Silicon in CF4 + O2, CHF3 + O2, and C4F8 + O2 Mixtures Russ. Microelectron. Pub Date : 2023-10-01 A. M. Efremov, A. V. Bobylev, K.-H. Kwon
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Influence of Boundary Conditions on Quantum Magnetotransport in a Thin Film Russ. Microelectron. Pub Date : 2023-10-01 I. A. Kuznetsova, O. V. Savenko, D. N. Romanov
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Simulation of the Adsorption and Diffusion of Lithium Atoms on Defective Graphene for a Li-Ion Battery Russ. Microelectron. Pub Date : 2023-07-05 M. M. Asadov, S. O. Mammadova, S. S. Huseynova, S. N. Mustafaeva, V. F. Lukichev
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Design of a Nonlinear Model of a Pseudomorphic 0.15 μm рHEMT AlGaAs/InGaAs/GaAs Transistor Russ. Microelectron. Pub Date : 2023-07-05 D. Tsunvaza, R. V. Ryzhuk, I. S. Vasil’evskii, N. I. Kargin, V. A. Klokov
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Recording the Polarization State of a Photon in the Correlated Electronic States of an Array of Quantum Dots Russ. Microelectron. Pub Date : 2023-07-05 A. V. Tsukanov, I. Yu. Kateev
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Precise Tomography of Qudits Russ. Microelectron. Pub Date : 2023-07-05 Yu. I. Bogdanov, N. A. Bogdanova, Yu. A. Kuznetsov, K. B. Koksharov, V. F. Lukichev
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Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates Russ. Microelectron. Pub Date : 2023-07-05 E. A. Klimov, S. S. Pushkarev, A. N. Klochkov, M. O. Mozhaeva
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Hydrogen Plasma under Conditions of Electron-Cyclotron Resonance in Microelectronics Technology Russ. Microelectron. Pub Date : 2023-07-05 E. A. Polushkin, S. V. Nefed’ev, A. V. Koval’chuk, O. A. Soltanovich, S. Yu. Shapoval
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Simulation of a System of Nanoantennas Located in a TSV Channel as a System for Receiving and Transmitting Data Russ. Microelectron. Pub Date : 2023-07-05 D. A. Serov, I. A. Khorin