Abstract The design results of a charge-sensitive amplifier (CSA) with a pseudo-differential output are presented. The CSA is intended for operation with signals of both polarities at the dynamic range up to 100 fC and parasitic detector capacitances up to 100 pF. In order to form a pseudo-differential signal, a first-order low-pass filter having a cutoff frequency of several hertz was used. CSA is

Abstract For the first time in Russia, the Mokerov Institute of Ultra High Frequency Semiconductor Electronics, Russian Academy of Sciences (IUHFSE, RAS) developed, manufactured, and investigated three types of monolithic integrated circuits for the Ku and Ka-bands based on gallium nitride heterostructures on silicon substrates with a diameter of 100 mm. The measured microwave characteristics of the

Abstract The object of research are samples of nonvolatile electrically alterable memory elements (memristors) based on TiN–TiO2–SiO2–W open “sandwich” structures, in which conductive nanostructures with electrically alterable characteristics are formed by the electroformation. The effect of the oxygen pressure and the electroformation conditions on the switching of the memory element is investigated

Abstract The features of the electromagnetic simulation of an SSI microwave 5-bit attenuator for the 5–15 GHz frequency range on AlGaN/GaN heterostructures are reviewed. The implementation of the device envisages the use of contacts with capacitive coupling. Attenuator provides 1, 2, 4, 8 and 16 dB attenuation in the 5 to 15 GHz bandwidth and control of the signal’s amplitude in the range from 0 to

Abstract It is proposed to use transistor-transistor logic (TTL) for future fast, low-power digital electronic circuits. A relaxation quantum transistor can be the basic element of these circuits. This approach allows us to circumvent the difficulties of using field effect transistors based on nanowires.

Abstract In this paper, we develop an integrated CMOS microwave energy converter for passive wireless microdevices. A modification of the voltage multiplier circuit, which allows implementing a device efficient in multiplication using standard CMOS technologies, is proposed. Compact models of multistage multipliers that take into account the voltage drops across nanoscale MOS transistors when operating

Abstract In this paper, the results of the theoretical and experimental studies of a single-capacitor mechanical-to-electrical energy converter based on the Bennet doubler with a power source in a variable capacitor branch are presented. The analytical expressions obtained for calculating its basic characteristics make it possible to considerably simplify the search for parameters of the converter

Abstract AlGaAs MHEMT transistors are studied in the microwave frequency range with a gate length of 0.15 μm. It is found that the discrepancy between the experimental and theoretically calculated, within the model, S-parameters does not exceed 0.5% in the frequency range from 1 to 30 GHz. The static characteristics of the device are satisfactorily described by the indicated model in the voltage range

Abstract This article contains the results of research on the topical problem of highly sensitive express registration of biological objects using field-effect transistors with the surface open for analyte access, which are made based on silicon-on-insulator (SOI) films. The possibilities of dielectrophoretic effects for controlling the concentration of the analyte in the area of sensory elements are

Abstract The features of the use of electron sources based on thermal and field emission in devices of electrovacuum production are considered, including the preservation of the emissive capacity when the operating conditions in a vacuum deteriorate. It is shown that the advantage of metalloporous hot cathodes is the high reduction ability of emission after the device is repeatedly pumped out to the

Abstract The kinetics of reactive ion etching of an Si, SiO2, and Si3N4 in the C4F8 + O2 + Ar mixture with a varied C4F8/O2 mixing ratio under the conditions of an rf inductive discharge (13.56 MHz) is investigated. Using the methods of plasma diagnostics and simulation, the data on the effect of the initial mixture’s composition on (a) the parameters of the electronic and ionic components of plasma

Abstract Field-effect graphene transistors (FGTs) based on single-layer graphene using the developed simplified combined self-consistent model are simulated. It is used to compare the results of calculating the current–voltage (I–V) characteristics of five devices with the same geometric parameters with different materials of the gate dielectric of the upper gate. The influence of the thickness of

Abstract A well-founded class of dependences, based on the theory of nonlinear electrical circuits, is proposed for the formal approximation of static characteristics for various electronic devices. The dependences are simple fractionally linear and fractionally quadratic expressions (a particular case of rational functions), convenient for engineering calculations. However, these expressions represent

Abstract Single photon detectors (SPDs) are the most sensitive devices for detecting light. The rapid development of quantum communication over the past decades have given rise to the development of a cheap and miniature SPD device. Its core consists of a single-photon avalanche photodiode (SPAD), a specially designed semiconductor device that is sensitive to single-photon radiation. Both at the dawn

Abstract A spectroscopic approach to measuring a charge qubit placed in a waveguide consisting of three microcavities (a photonic molecule) is discussed. The logical states of a qubit are represented by the single-electron orbitals of a semiconductor double quantum dot. The impact of different factors that cause deviations of the system’s parameters from specified values ​​is investigated. The possibility

Abstract The dynamics of a transverse domain wall in a narrow magnetic permalloy nanowire in an external field is studied by the method of micromagnetic simulation. It was found that in the limit of a very small nanowire width (less than 40 nm), a precession of the domain wall is observed, accompanied by a change in its chirality. It is shown that the precession frequency increases with an increase

Abstract The influence of the spreading process of a resist on a decrease on a lateral resolution during its dry electron-beam etching is estimated. It is shown that the real line width cannot be explained by the scattering of electrons in the samples. Based on the profiles obtained using atomic force microscopy and scanning electron microscopy, it is demonstrated that the spreading process can significantly

Abstract In this paper, we study the radiation-induced processes occurring during the implantation of antimony ions into films of the positive diazoquinone-novolac (DQN) FP9120 photoresist (PR) on silicon by the Fourier-transform infrared (FTIR) spectroscopy of the frustrated total internal reflection (TIR). Ion implantation (II) is found to lead to the appearance in the frustrated TIR spectrum of

Abstract In this paper, we investigate the relationship between the external and internal plasma parameters in a C4F8 + O2 + Ar mixture under conditions of an inductive radio-frequency (13.56 MHz) discharge. With the combined use of plasma diagnostics based on Langmuir probes and zero-dimensional (global) plasma simulation, first, the key plasma-chemical processes that form stationary electrophysical

Abstract The effect of porosity on the charge-discharge characteristics of thin films based on an Si–O–Al nanocomposite with two types of structure, homogeneous and columnar, is studied. An additional increase in the porosity of thin Si–O–Al films is achieved by removing the \({\text{Si}}{{{\text{O}}}_{x}}\) phase, where \(1 < x \leqslant 2,\) when etching in a solution of hydrofluoric acid. The charge-discharge

Abstract A numerical model of the evolution of the trench profile during cryogenic etching in SF6/O2 plasma based on the cellular representation of the surface state, the Monte Carlo method for calculating particle fluxes, and the scheme of delayed desorption of reaction products is proposed. This description combines the advantages of the cell method (the ability to describe phenomena of a stochastic

Abstract It is established that the electrophysical characteristics of MOS transistors largely depend on the quality of a gate dielectric. The presence of an extra built-in charge in the dielectric and fast surface states at the SiO2/Si interface leads to both an increased threshold voltage and decreased saturation current and voltage, decreased slopes of the characteristics of the MOS transistor in

Abstract The processes of electrochemical deposition into a matrix of vertical vias of different diameters (500–2000 nm) in Si/SiO2 substrates with a TiN barrier layer at the bottom of the holes are studied. Morphological studies of the metal in the holes show that the structure of copper clusters is rather uniform and is formed from crystallites of ~30 to 50 nm. Repeatability and stability with a

Abstract The effect of a mixture’s composition on the electrophysical parameters and emission spectra of HCl/Cl2 and HCl/He plasmas under the conditions of a DC glow discharge is analyzed. The data on the gas temperature and reduced electric field strength are obtained. It is established that the reduced electric field strength in HCl/Cl2 plasma rises linearly with the rising fraction of the second

Abstract The electrical resistivity ρ of cobalt films with a thickness of 10 to 55 nm deposited in different modes of magnetron sputtering on SiO2/Si wafers with their subsequent ion-plasma treatment is investigated. Co films 42 nm thick with minimum ρ of 9.8 µΩ cm, comparable to ρ of a bulk metal, are obtained at a temperature of 600 K. Treating the Co film surface in dense argon plasma with an energy

Abstract The property of the natural parallelization of matrix-vector operations inherent in memristor crossbars creates opportunities for their effective use in neural network computing. Analog calculations are faster by orders of magnitude than calculations on a central processor and on graphics accelerators. Furthermore, the energy costs of mathematical operations are significantly lower. At the

Abstract In the modern world, knowledge and advanced technologies determine the effectiveness of the economy, and they can radically improve the quality of life of people, modernize infrastructure and public administration, and ensure law and order, as well as security. The creation of a research infrastructure based on a high-performance hybrid cluster, allows detailed calculations of complex phenomena

Abstract Information about the structure and properties of materials is especially important when working with micro-and nanoscale objects due to the complexity of obtaining it. This makes it relevant to use computer modeling to predict the required characteristics of materials. The electronic, magnetic, mechanical, and other properties of crystalline substances are determined by their structure: the

Abstract In this paper, we consider the problem of solving scientific problems in the field of materials science in the environment of high-performance computing systems. Mathematical modeling methods implemented by specialized modeling systems is used to solve a certain kind of problems in materials science. The modeling systems show the greatest efficiency when deployed in hybrid high-performance

Abstract— Models that describe bipolar resistive switching (BRS) in planar microstructures based on oxide compounds (Bi2Sr2CaCu2O8 + x and Nd2 – xCexCuO4 – y) and bismuth selenide are considered. Metal/insulator/metal planar-type memristor heterostructures in which the microsize is formed by an electrode with a diameter much smaller than the total size of the structure (which can be both Sharvin-type

Abstract A general set of ideas related to the modeling of memristors is presented. The memristor is considered as a partially ordered physicochemical system, located in terms of nonlinear dynamics within the “edge of chaos.” The logical-historical relationship of the physics of memristors, nonlinear dynamics, and neuromorphic systems is illustrated in the form of a diagram. Nonlinearity is divided

Abstract— The features of the development and application of the procedures for measuring refractive coefficients based on multiangle spectrophotometric methods of reflection are considered. The effect of the shape, size, and surface treatment of the samples on their spectral dependences of the reflection is described. The possibility of determining the refraction coefficients by two spectrophotometric

Abstract The article discusses the use of hybrid HPC clusters for the execution of software designed to calculate the electronic structure and atomic scale materials modeling. Modern software systems, which are designed to solve the problems of materials science, use the capabilities of various hardware computing accelerators to increase productivity. The use of such computing technologies requires

Abstract In the field-effect transistors based on the wide-band-gap nitride heterostructures, the dielectric layers are in widespread use as one of the main elements in the active regions of the devices and the passivation layers. Stringent requirements are imposed on the dielectrics in terms of the high dielectric capacitance, large band-gap energy, and the coating integrity. Furthermore, the films

Abstract When manufacturing systems on a chip using modern technologies with highly integrated elements, problems arise in testing and repairing the internal memory. The original architecture of the fault-tolerant semiconductor memory with the given failure detection rate is proposed. At the same time, rather than the entire device being backed up only the elements that are most susceptible to failures

Abstract The compact models of junction field effect transistors (JFETs) used in release-quality versions of SPICE-like programs are focused only on the standard temperatures ranging from –60 to 150°C and are unworkable for an electronic circuit design in the cryogenic temperature range (below –120°C). It this study, the Low-T SPICE model of the JFET for designing electronic circuits in the extended

Abstract The nanoscale state for many substances differs significantly from the massive state. During the formation of arrays of silver nanoparticles by condensation on a cold substrate, the initial condensate is unstable. For the formation of stable arrays with a shape close to spherical, subsequent weak heat treatment is required. In this work the behavior of an array of silver nanoparticles during

Abstract For modern information, measuring, and optoelectronic systems based on micro- and nanomechanical sensors of angular velocity and linear acceleration, it is important to ensure their stable functioning in the presence of external factors. The paper presents the results of a study of the effect of a random vibration on the characteristics of micromechanical accelerometers (MMAs) obtained using

Abstract The design and technology of solder and adhesive bonds, as well as the elastic strength and plastic properties of the materials of a Si crystal, solder, and glue joint, are the most significant factors characterizing the reliability and durability of a microelectronic module. The structure proposed in this paper is designed to reduce its weight and size characteristics, improve reliability

Abstract The ion-sensitive field effect transistor (ISFET) is a promising tool for detecting intermolecular interactions, including biochemical ones. Using the ISFET, it is possible to recognize various mechanisms of specifically adsorbed substances. In addition, ISFET can be integrated with CMOS technology, which opens up new prospects for creating intelligent micro- and nanosystems. In this study

Abstract Earlier, when studying with the help of instrument-technological simulation of the silicon-on-insulator field-effect Hall sensor (SOI FEHS) in the partial depletion mode, the effect of increasing its magnetic sensitivity was discovered. In this paper, we study the parameters of SOI-FEHS samples in various operation modes to experimentally confirm the discovered effect. To increase the measurement

Abstract The use of chloride electrolytes for the electrochemical deposition of the Ni81Fe19 permalloy is promising because sulfate electrolytes are unstable in the presence of sulfur. The magnetic properties of the Ni81Fe19 alloy are very sensitive to the deviation of the composition from the molar ratio of 4.26 between components. In this study, the accuracy of preparing the chloride electrolyte

Abstract The thermal resistance of a semiconductor device determines the limiting thermal regime that guarantees its operability: the higher the thermal resistance of a semiconductor device the larger its overheating can be. Therefore, the thermal resistances of commercial devices must be controlled. At present, the method for determining the junction-to-case thermal resistance using the structure

Abstract The characteristic features of the reduced instruction set computer (RISC) architecture are used to develop high-performance microprocessors and microcontrollers. Complex operations, which include subroutine calls and interrupt service, are difficult to implement in hardware for the same time interval with all the other commands. Such operations, when executed, involve recording the value

Abstract A gate dielectric is one of the key structural elements of submicron MOS transistors, on which the reliability of its operation depends. A breakdown of the dielectric leads to a loss in the functioning of the transistor and the failure of the entire IC or a malfunction in its operation. Therefore, special attention is paid to assess the defectiveness of a gate dielectric and its operating

Abstract In order to develop a scientifically grounded technology for production of porous getters, there appears the necessity to apply highly sensitive methods for determining the activation temperature, which are compatible with the standard magnetron pumping technology. In this study, a complex technique for determining the activation temperature for porous getters is proposed using the experimental

Abstract Two-dimensional (2D) semiconductor crystals can be applied to further increase the efficiency and speed of field-effect transistors. Such transistors are free from some of the adverse effects present in the traditional MOS transistors when their size is reduced. In this study, the model of the transistor MOS structure with the channel made of a 2D-crystal is proposed and its charge properties

Abstract The results of studying the structure and phase composition of thin-film positive electrodes of a lithium-ion battery based on vanadium oxides are presented. It is shown that initially polycrystalline films contain higher V2O5 and V3O7 oxides, the proportion of which increases with the time of oxygen annealing. As a result of charge–discharge cycling, the higher vanadium oxides are amorphized

Abstract The technology of mounting a crystal of a semiconductor device is described. The technology of soldering in mounting a crystal of a semiconductor device is presented. The question of using lead solders for soldering silicon crystals is considered. Methods for the formation of multilayer metallization of the reverse side of the crystal are considered and the optimal technology is selected.

Abstract The paper presents the results of modeling, theoretical and experimental investigations on the physicochemical conditions of the synthesis, calculation of the Т–х phase diagram, thermodynamics and kinetics of crystallization, and correlation of the properties with the composition and grain sizes of semiconducting solid solutions in the two-dimensional (2D) GaS–GaSe system, in which the complete

Abstract In this paper, we develop the theoretical concepts that allow establishing a relationship between the HEM activation energy of the electromigration of the intrinsic ions of a conductive material along the boundary of its compound (interface) with another (dielectric) material and the work Wa of the reversible separation of materials along this interface. The relationship between the energy

Abstract Atomic layer deposition (ALD) of titanium nitride (TiN) is carried out by the alternate surface reactions of titanium tetrachloride (TiCl4) and hydrazine (N2H4) at temperatures ranging from 150 to 350°C. The film deposition process is monitored in situ by quartz piezoelectric microweighing (QPM) and Fourier transform infrared spectroscopy (FTIRS). The QPM data detects the self-limiting character

Abstract The paper presents the concept and basis for the apparatus of a new mathematical object—spots, which follows the concept of “mental images” in psychology and corresponds to the idea of vague geometric objects. Since mental images are semantic ones, spots appear to be an adequate mathematical object, promising for solving problems of artificial intelligence (AI), including the knowledge representation

Abstract In this paper, we investigate the kinetics and mechanisms of reactive-ion etching of Si and SiO2 in the plasma of an HBr + O2 mixture with a variable initial composition under conditions of the high-frequency (13.56 MHz) inductive discharge. In the experimental and theoretical (model) analysis of the plasma parameters, the key plasma-chemical processes that form the stationary composition

Abstract The main approaches to the simulation of resistive switching in systems with transition metal oxide layers are discussed. The algorithms and results of ab initio simulation of such systems, in particular, the energy barrier heights ​​for generation, recombination, and migration of defects in the HfOx and Ta2O5 films, are briefly described. The approaches to the finite element and Monte Carlo

Abstract The results of investigation of the polarization relaxation mechanism for the LiPON solid electrolyte by a discharge through an external load are presented. Test cells implemented in the form of encapsulated multilayer structures \({{{{{{\text{Si}{{\text{O}}_{\text{2}}}}/{\text{Pt}}(100\,\,\text{nm})}/{\text{LiPON}\,(1000\,\,\text{nm})}}/{\text{Pt}~(100\,\,\text{nm})}}/{\text{Ti}~(10\,\,\

Abstract An approach to an end-to-end simulation of the electrophysical characteristics of lowly doped sub-25-nm SOI (silicon-on-insulator) CMOS transistors with an asymmetric surrounding gate composed of two sequentially connected materials with different work functions is considered. The approach consists of the consecutive calculation of the 3D potential distribution in the working region, calculation

Abstract Silicon oxide and silicon nitride are two key dielectrics in silicon devices. The advantage of silicon nitride over other dielectrics is that silicon nitride is compatible with silicon technology. Despite numerous studies, the mechanism of charge transfer in the storage elements of resistive memory based on silicon nitride is still not clear. It is required to study in detail the mechanism

Abstract In this paper, we study the electronic and band structure of 4p-elements (M = Ge, Si)-doped graphene nanosheets with vacancies by the density functional theory method. The adsorption energy of the doping atoms and the relative stability of doped graphene monolayers are estimated. An antiferromagnetic ordering is discovered in these graphene-based systems. Based on the analysis of the electronic

Abstract The results of the simulation of a triple majority element during the charge collection from a particle track by transistors and simultaneous input switching are reported. The simulation is made using the 3D TCAD physical models of CMOS transistors according to the bulk 65-nm design rule for tracks with a linear energy transfer of 60 MeV cm2/mg to them by a particle. It is found that the duration