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Fault tolerant micro-programmed control unit for SEU and MBU mitigation in space based digital systems Microelectron. Reliab. (IF 1.6) Pub Date : 2024-03-11 Deepanjali S., Noor Mahammad Sk
The Micro-Programmed Control Unit (MPCU) offers an alternative to conventional hardwired control circuits by employing a control store for transmitting control signals through stored control bits. Traditionally, Hamming codes are used for Single-Event Upset (SEU) protection in memory components. However, these Error Control Codes (ECC) encounter challenges, such as inconsistent code rates and limited
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Testing and simulation of lifetime for wire bond interconnections with varying bond foot angle Microelectron. Reliab. (IF 1.6) Pub Date : 2024-03-11 Marcel Sippel, Yi Fong Tan, Ralf Schmidt, Pietro Botazzoli, Mario Sprenger, Jörg Franke
Ensuring sufficient reliability is one key aspect in the design process of a power electronic module. The wire bond interconnection to the semiconductor chip is often limiting the power cycling lifetime of the module. Increased packaging density as well as integration of additional components on module level can limit the available space for the wire bond layout. To enable proper “design for reliability”
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Numerical investigation of solder joint shape for micro-spring package during vacuum vapor phase soldering Microelectron. Reliab. (IF 1.6) Pub Date : 2024-03-10 Xiaomin Li, Ping Wu
The novel micro-coil spring package has become a new choice for reliable applications in extreme temperature change, high-strength impact, long-term vibration and other harsh environments due to the advantages arising from its special packaging design. The study of solder joint shape is an important step in the characterization of the package reliability. By Ansys Fluent software, the finite volume
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A theoretical investigation of mole fraction-based N[formula omitted] pocket doped stack oxide TFET considering ideal conditions for reliability issues Microelectron. Reliab. (IF 1.6) Pub Date : 2024-03-10 Kaushal Kumar Nigam, Dharmender
Nowadays, reliability towards the interface trap charges of the semiconductor device is a major grave concern. Therefore, we introduce, for the first time, a theoretical investigation of mole fraction-based dual material stack gate oxide pocket-doped heterojunction tunnel field-effect transistor (DM-SGO-PD-HTFET) considering ideal conditions for reliability issues. A stacked gate oxide is employed
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A screening method of retired insulated gate bipolar transistor for reuse based on multiple indicators and integrated model Microelectron. Reliab. (IF 1.6) Pub Date : 2024-03-08 He Liu, Xinyu Li, Zhifeng Liu
In devices such as electric vehicles and charging stations, the insulated gate bipolar transistor (IGBT) serves as a key component. Notably, even when associated equipment reaches its end-of-life, the IGBTs often remain functionally robust, suggesting significant potential for reuse. As such, this study proposes a method for the screening of retired IGBTs for reuse, based on multiple indicators and
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Experimental and numerical investigation on reliability of encapsulated sine wave interconnect for stretchable substrates Microelectron. Reliab. (IF 1.6) Pub Date : 2024-03-07 Deepesh Patidar, Arulsham Bhasin, Vijay Kumar Pal
This article focuses on enhancing the reliability of stretchable electronic interconnects designed to withstand challenging mechanical conditions such as stretching, bending, and twisting, thereby improving the overall performance of stretchable electronics in applications like wearable technology, robotic skin, and biomedical devices. The study explores the deformation, failure mechanisms, and reliability
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Investigation of safe operating area and behavior of unclamped inductive switching on 4H-SiC VDMOSFET Microelectron. Reliab. (IF 1.6) Pub Date : 2024-03-04 Chao-Yang Ke, Ming-Dou Ker
The electrical safe operating area (eSOA) of the transmission-line pulse (TLP) test and the electrical behavior of the unclamped inductive switching (UIS) test on a 4H-SiC 600-V vertical double-implanted MOSFET (VDMOSFET) were investigated in this work. The snapback phenomenon of the 100-ns and 1000-ns TLP I-V curves can be inferred to be the triggering on of the parasitic BJT in the VDMOSFET. Moreover
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Solder joint shape optimization and thermal-mechanical reliability improvement for microwave RF coaxial connectors Microelectron. Reliab. (IF 1.6) Pub Date : 2024-02-26 Geng Li, Shang Wang, Ying Ding, Jiayue Wen, Taohan Wang, Jiayun Feng, Yanhong Tian
Coaxial connectors are widely used in microwave RF components in wireless communication, aerospace, and other fields. However, the poor interconnection reliability between their inner conductors and circuit boards has been a key factor restricting their development. Thermal cycling and high temperature are the most common working loads for high-frequency devices and the failure generally takes place
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Grain boundaries-dominated migration failure of copper interconnect under multiphysics field: Insight from theoretical modeling and finite element analysis Microelectron. Reliab. (IF 1.6) Pub Date : 2024-02-24 Yixue Zhu, Hongwei Bao, Zhaokai Yang, Hongquan Jiang, Fei Ma
As the feature size of Cu interconnects in microelectronic devices are miniaturized into micro- and even nano-scale, the effects of grain boundaries (GBs) on the electromigration (EM) failure become more and more obvious. It is of fundamentally importance to investigate the grain boundaries dominated failure mechanism and lifetime of Cu interconnects. In this work, the interconnection models containing
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Effect of the loop forming process on the lifetime of aluminum heavy wire bonds under accelerated mechanical testing Microelectron. Reliab. (IF 1.6) Pub Date : 2024-02-21 Florens Felke, Anne Groth, Martin Hempel, Bernhard Czerny, Golta Khatibi, Torsten Döhler, Ute Geissler
Heavy wire bonding is one of the most common interconnection technologies in manufacturing of high-power electronics. For industrial applications, the long-term reliability of these connections is crucial. Besides the selection of the wire material and the loop geometry itself, the loop forming process parameters also have an influence on the reliability of the wire bond. In this work, the influence
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Implementation of high failure current Schottky-embedded DDSCR Microelectron. Reliab. (IF 1.6) Pub Date : 2024-02-21 Wei Liu, Hongjiao Yang, Yang Wang, Shuang Li, Hongke Tao, Zhiwen Zeng
In order to improve the robustness of electrostatic discharge (ESD) of the dual direction silicon controlled rectifier (DDSCR), a DDSCR embedded with Schottky barrier diode (SBD_DDSCR) was designed. This structure was based on the traditional DDSCR (TDDSCR) and embedded with Schottky barrier diode to form two additional shunt paths to increase the failure current. The working principle of SBD_DDSCR
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Evaluation on the electro-thermal instability process of thermal runaway under high temperature based on TCAD Microelectron. Reliab. (IF 1.6) Pub Date : 2024-02-20 Xiao Ma, Yongle Huang, Fei Xiao, Yifei Luo, Binli Liu, Xin Tang
Thermal runaway is one of the major failure modes for IGBTs. In the present work, the thermal runaway is theoretically analyzed and quantitatively characterized based on TCAD models. Firstly, the mechanism of thermal runaway under HTB (High Temperature Blocking) condition and short-circuit condition was analyzed in theoretical. Next, a TCAD model was proposed and improved to realize the equivalence
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Single-event burnout resilient design of 4H-SiC MOSFETs through staircase-like buffer layer Microelectron. Reliab. (IF 1.6) Pub Date : 2024-02-19 Haibin Wang, Jianghao Gu, Xiaofeng Huang, Jingchao Zhang, Yahui Jing
With the rapid development of SiC materials, high-power devices such as SiC MOSFETs have been widely used in aerospace, new energy, nuclear applications, and other fields. This places higher demands on their reliability, especially about radiation effects. This paper proposes a 4H-SiC staircase-like buffer layer MOSFET (SBL-MOSFET) with a hardened structure against single-event burnout (SEB). A comparison
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Triple-node-upset self-recoverable latch design for aerospace applications Microelectron. Reliab. (IF 1.6) Pub Date : 2024-02-13 Yuxin Bai, Xin Chen, Ying Yang, Xinjie Zhou, Ying Zhang
Latches based on nanoscale CMOS process are vulnerable to multiple node upsets such as double node upset (DNU) and triple node upset (TNU) when working in radiation environment. Therefore, this paper presents a TNU self-recoverable latch (TSRL) with low overhead through a quadrate recovery structure, clock-gated technology, and a high-speed path from input to output. Simulation results based on 28
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Methods of coping with fractured FPGA leads during space qualification Microelectron. Reliab. (IF 1.6) Pub Date : 2024-02-13 Alime Özyildirim
Satellite equipment should withstand launch conditions and operate safely in space environment. Necessary design and production approaches should be followed meticulously to prevent failures during launch and operation in space. Hence, qualification tests may be more valuable to observe design and workmanship conforming to the requirements including margin particularly if the equipment is newly developed
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Enhanced gate biasing resilience in asymmetric and double trench SiC MOSFETs towards generalized highly reliable power electronics Microelectron. Reliab. (IF 1.6) Pub Date : 2024-02-12 Dandan Wang, Yifan Zhang, Ruolan Wang, Ruifeng Tang, Kuan Wang, Di Wang, Long Liu, Feng Yan, Songsong Zhang, Andy Shen, Zhihong Mai, Guozhong Xing
The gate oxide quality in SiC MOSFETs presents a significant challenge, particularly at temperatures exceeding 175 °C. This predicament arises from the gate oxide interface's propensity to trap or release charge carriers, compromising device ruggedness. In mainstream SiC MOSFETs, the gate oxide in the trench corner confronts the demanding task of enduring higher electric field strengths, thereby posing
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A machine learning and finite element simulation-based void inspection for higher solder joint reliability Microelectron. Reliab. (IF 1.6) Pub Date : 2024-02-07 Kaiyuan Chen, Yu Zhang, Guang Cheng, Yang Zhang
We proposed a new approach for high-quality void inspection to enhance solder joint reliability. Using a small batch of samples, we developed an automatic detection algorithm for voids in the Cu-Sn solder joint. Based on ~600 experimentally obtained samples, we trained a convolutional neural network model and identified ~500 voids from ~80 samples. The obtained results indicated the voids in the solder
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Behavioral electrothermal modeling of MOSFET for energy conversion circuits simulation using MATLAB/Simulink Microelectron. Reliab. (IF 1.6) Pub Date : 2024-02-06 Mohamed Baghdadi, Elmostafa Elwarraki, Imane Ait Ayad, Naoual Mijlad
The development of accurate and efficient electrothermal models and simulations for power electronics semiconductors is essential to optimize power electronics circuits and systems. To achieve this goal, it is crucial to have electrothermal models that are precise but not overly complicated, which can be used in commonly accessible simulators of power electronic circuit like MATLAB/Simulink. In this
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Cross-scale numerical analysis of PCB lamination process by an innovative partitioned homogenization method for the non-uniform curing shrinkage effect Microelectron. Reliab. (IF 1.6) Pub Date : 2024-01-30 Guoshun Wan, Qi Dong, Xiaochen Sun, Hao Zheng, Mengxuan Cheng, Zhiyan Zhao, Yuxi Jia
This study introduces a cross-scale numerical analysis approach for modeling the lamination process and predicting the post-lamination warping deformation of Printed Circuit Boards (PCBs), utilizing the partitioned homogenization methodology to account for the mesoscopic structure of each conductive layer. The curing reaction and viscoelastic properties of the resin are also taken into account and
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Experiments, constitutive modeling, and simulations on the creep behavior of the AgSn transient liquid phase metallic bonds Microelectron. Reliab. (IF 1.6) Pub Date : 2024-01-30 Mohammad A. Gharaibeh, Jürgen Wilde
The transient liquid phase (TLP) bonding using the silver‑tin system has been considered as one promising joining technique in power electronics due to their excellent thermal and electrical conductivity characteristics. In literature, there is a lack of published creep studies and creep constitutive models for the silver‑tin (AgSn) transient liquid phase bonds. Therefore, this paper aims to present
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New translation method to STC of photovoltaic module characteristics: A comparison of conventional approaches and proposal of a novel method Microelectron. Reliab. (IF 1.6) Pub Date : 2024-01-28 Aissa Hali, Yamina Khlifi
Aging study of photovoltaic (PV) modules requires PV curves analysis at the same conditions of irradiance and temperature as standard test conditions (STC). However, in practical cases, PV characteristics are measured at different conditions other than STC. Therefore, translating these curves to one constant condition is a crucial step to accurately estimate the performance of PV modules. The aim of
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Impact of proton-induced total ionizing dose effects on electrical characteristics and safe operating area of trench field-stop IGBT devices Microelectron. Reliab. (IF 1.6) Pub Date : 2024-01-25 Zhenhua Liu, Xiaofeng Huang, Lihua Mo, Zhiliang Hu, Mao Lin, Lina Qi, Haibin Wang
Insulated gate bipolar transistor (IGBT) is a bipolar gate-controlled device with high blocking voltage, current density, and switching frequency. The inverters composed of IGBTs can be used in the power system of spacecraft for power control and distribution. However, in the space environment, cosmic rays such as protons and γ-ray, may cause the total ionizing dose (TID) effects on IGBT, reducing
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Reliable single-ended ultra-low power GNRFETs-based 9T SRAM cell with improved read and write operations Microelectron. Reliab. (IF 1.6) Pub Date : 2024-01-20 Pramod Kumar Patel, M.M. Malik, Tarun K. Gupta
This paper presents a reliable single-ended nine-transistor (9T) static random access memory (SRAM) cell which is based on 16 nm graphene nanoribbon FETs (GNRFETs) technology. Single-ended operation significantly reduces switching activity and layout area. Therefore, the power consumption and area of the proposed cell is enhanced by 48.9 % and 3.8 %, respectively, as compared to the 2-bitline (2-BL)
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Simulation assessment of solder joint reliability for fully assembled printed circuit boards Microelectron. Reliab. (IF 1.6) Pub Date : 2024-01-20 Sofiane SAAD, Gowthamraj SAMPATHKUMAR, Renan LEON
The present study proposes a new coupled empirical, analytic and FEA method to assess with simulation the solder joint fatigue under a thermal cycling load, based on the PCB and component strains. The preprocessing of the full product FEA model (housings and PCBA) and calculation time were reduced to a few days versus several weeks with the classic simulation approach. Indeed, this method does not
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Mechanical property changes in sintered silver films by including copper oxide nanoparticles Microelectron. Reliab. (IF 1.6) Pub Date : 2024-01-18 Keisuke Wakamoto, Yuga Kumakiri, Takahiro Namazu
This paper investigates sintered silver tensile mechanical property changes by adding nano copper oxide particle of approximately 250 nm in diameter. The mixture ratio of polystyrene latex in ultrasonic atomization was adjusted to obtain porous and dense structure. Commercial silver nano paste and fabricated copper oxide nano particles are stirred by changing the copper oxide atomic ratio from 0 to
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Temperature dependent electron transport and interface state studies on Ni/n-Si/Al/Ag lateral Schottky junction Microelectron. Reliab. (IF 1.6) Pub Date : 2024-01-08 Gourab Bhattacharya, A. Venimadhav
We investigate in this work,the electron transport characteristics across Ni/n-Si Schottky junctions from temperature dependent current–voltage (I-V-T) and capacitance–voltage (C-V-T) studies. Barrier height obtained from I–V measurements exhibited upsurge with increasing temperature, whereas, the ideality factor decreases with increasing temperature within the range of 300K–400K. To analyze electron
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Influence of charge traps on charge plasma-germanium double-gate TFET for RF/Analog & low-power switching applications Microelectron. Reliab. (IF 1.6) Pub Date : 2024-01-09 Ajeet K. Yadav, Sambhu P. Malik, Gaurav S. Baghel, Robin Khosla
The device reliability on account of charge traps at the AlO/Ge interface is a main distress for the Ge-based Tunnel Field Effect Transistor (TFET). Here, the influence of Interface Trap Charges (ITC) on the charge plasma-based Ge-Double-Gate TFET (CP-Ge-DGTFET) and conventional Ge-DGTFET's DC, Analog/RF, and linearity characteristics have been inspected using technology-computer-aided-design (TCAD)
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Electrothermal power cycling of 15 kV SiC PiN diodes Microelectron. Reliab. (IF 1.6) Pub Date : 2023-12-30 Chengjun Shen, Saeed Jahdi, Sai Priya Munagala, Nick Simpson, Phil Mellor, Olayiwola Alatise, Jose Ortiz Gonzalez
Through extensive experimental measurements for the static and dynamic characteristics, the commercially available 15 kV Silicon Carbide (SiC) PiN diode are evaluated by power cycling. The forward voltage of diodes is used to indirectly measure the junction temperature. The SiC PiN diodes feature smaller die size, less reverse recovery charge and less on-resistance when compared to the commercially
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A flexible soft error mitigation framework leveraging dynamic partial reconfiguration technology Microelectron. Reliab. (IF 1.6) Pub Date : 2023-12-30 Jiyuan Bai, Xiang Wang, Zifeng Zhao, Zikang Zhang, Chang Cai, Gengsheng Chen
Fault tolerance is crucial for mission-critical FPGA-based systems in radiation environments. Soft-core processors in these systems, performing both control and computational tasks, require efficient soft error mitigation techniques to enhance their fault tolerance. In this paper, we investigate the variation trends in the fault tolerance of various processor components as the software workload changes
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Gate bias stress reliability of a-InGaZnO TFTs under various channel dimension Microelectron. Reliab. (IF 1.6) Pub Date : 2023-12-27 Jaewoong Cho, Jiwon Choi, Minh Phuong Nguyen, Thanh Thuy Trinh, Jang-Kun Song, Yong-Sang Kim, Duy Phong Pham, Junsin Yi
In this work, we report a comprehensive and systematic study about the effect of various amorphous In-Ga-Zn-O (a-IGZO) channel dimensions on the gate bias stress reliability of a-IGZO thin film transistor (TFT) devices. The width of the channel is varied from 3, 10, 50 μm, while the length is varied from 3,5, 10 μm. There is a significant shift of Vth to negative voltage when the length is <10 μm and
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Optimal selection of bulk capacitors in flyback converter Microelectron. Reliab. (IF 1.6) Pub Date : 2023-12-28 Xiao Wang, Ciyong Luo, Junfeng Zhao, Zihan Luo
To optimize the selection of the bulk capacitor in a flyback converter, this paper proposes a method based on the lifetime and volume of aluminum electrolytic capacitors (Al e-caps). Firstly, mathematical models for the low-frequency and high-frequency harmonic currents of the bulk capacitor are established. The accuracy of these models has been verified by comparing the Saber simulation results and
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Aluminum addition to Sn-3Ag-0.5Cu-1In-xAl alloy effect on corrosion kinetics in HCl acid solution Microelectron. Reliab. (IF 1.6) Pub Date : 2023-12-20 Masoud Giyathaddin Obaid, Ahmet Mustafa Erer
This study examines how adding aluminum to the SAC205-1In-xAl solder alloys in a 1 M hydrochloride acid HCl solution affects their corrosion behavior. HCL acid has a faster corrosion rate than other electrolytes because it contains chlorine (Cl−) and hydrogen (H+) ions. In contrast to other electrolytes like salt and alkaline solutions, which only have one type of ion species for causing corrosion
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Performance enhancement of 1.7 kV MOSFET using PIN-junction gate and integrated heterojunction Microelectron. Reliab. (IF 1.6) Pub Date : 2023-12-12 Qing-yuan Wang, Ying Wang, Xin-Xing Fei, Xing-ji Li, Jian-qun Yang, Cheng-hao Yu
A novel PIN-junction gate 4H-SiC UMOSFET with integrated heterojunction (PJG-UMOSFET) is proposed and numerically studied. The integrated heterojunction diode effectively suppresses the conduction of the intrinsic PN diode in the reverse conduction state of PJG-UMOSFET. The device simulation results show that the on-resistance (Ron) of the device is reduced by about 20.5 % compared with the traditional
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Reliability evaluation of thick Ag wire bonding on Ni pad for power devices Microelectron. Reliab. (IF 1.6) Pub Date : 2023-12-15 Xing Wei, Di Xin, Isamu Morisako, Junko Takahashi, Kohei Tatsumi
In recent years, silicon carbide (SiC) semiconductors have gained traction in high-performance power devices due to their ability to operate at high temperatures (above 200 °C). However, traditional interconnection materials are not sufficiently reliable at such elevated temperatures. Typically, in power devices, thick Al wires with diameters of 200 μm or larger are commonly used to bond Al electrodes
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Analysis of noise behavior and reliability of pocket doped negative capacitance FET under the impact of trap charges and temperature Microelectron. Reliab. (IF 1.6) Pub Date : 2023-12-12 , Jagritee Talukdar, Bijit Choudhuri, Kavicharan Mummaneni
This paper represents an in-depth investigation of low to high frequency noise performance of highly doped double pocket double gate NCFET (HDDP-DG-NCFET) and single gate NCFET (SG-NCFET) in the existence of Uniform and Gaussian trap charges at various frequencies and temperatures (200 K–400 K). The drain current noise spectral density (Sid) and Gate voltage noise spectral density (Svg) at different
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Transient simulations and theoretical modeling of near-junction heat conduction in GaN-on-diamond HEMT Microelectron. Reliab. (IF 1.6) Pub Date : 2023-12-08 Yiyang Shen, Xueliang Fan, Daosheng Tang
Under high-power working conditions, accurate predictions of the maximum temperature and thermal resistance distribution in devices during transient states are essential for monitoring the health status of the devices. In this work, the heat conduction characteristics of GaN-on-diamond high electron mobility transistors (HEMTs) near the junction region under transient conditions with thermal impedance
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An efficient radiation hardening SRAM cell to mitigate single and double node upset soft errors Microelectron. Reliab. (IF 1.6) Pub Date : 2023-12-06 Pavan Kumar Mukku, Rohit Lorenzo
Various charged particles in space, including α- particles, neutrons, heavy ions, and photons, create stability and reliability concerns in memory circuits. Furthermore, these particles generate an ion track within the memory device, which disrupts the storage bit. The standard 6T SRAM is very susceptible to this upset. To address this issue, several authors proposed radiation-hardened SRAM cells.
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Performance degradation and reliability analysis of a MEMS flow sensor with accelerated degradation testing Microelectron. Reliab. (IF 1.6) Pub Date : 2023-12-06 Qiaoqiao Kang, Yuzhe Lin, Jifang Tao
In this article, we research the performance degradation of a MEMS flow sensor with accelerated degradation testing (ADT). The degradation of temperature stress (Ts) on sensor is studied. Based on the performance in the aging test, resistance degradation ∆R is selected as a more suitable degradation characteristic parameter. Furthermore, the degradation process of the characteristic parameter results
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Design of soft error correction flip-flop cells for highly reliable applications Microelectron. Reliab. (IF 1.6) Pub Date : 2023-12-04 Hongchen Li, Xiaofeng Zhao, Jie Li
With the development of technology, the vulnerability of integrated circuits to Single Event Effect (SEE) increases, and the sensitivity of flip-flops to soft errors induced by Single Event Transient (SET) and Single Event Upset (SEU) increases. Fault tolerant design is necessary for high reliability applications. In this work, a Soft Error Correction Flip-Flop 1(SEC FF1) is proposed, which can correct
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Characterization of trap evolution in GaN-based HEMTs under pulsed stress Microelectron. Reliab. (IF 1.6) Pub Date : 2023-12-02 Qian Wen, Xiang Zheng, Xianwei Meng, Shiwei Feng, Pu Xu, Yamin Zhang
In this paper, the evolution of traps in GaN-based high-electron-mobility transistors under pulsed thermal stress and the combined effect of thermal stress and electrical stress are studied. By applying impulse stresses of different powers to the device, collecting transient current response curves, and accurately extracting the time constant and absolute peak changes of the traps by employing the
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Solder fatigue life modeling of QFN components based on design of experiments Microelectron. Reliab. (IF 1.6) Pub Date : 2023-12-02 Markus Käß, Hendrik Schmidt, Moritz Hülsebrock, Roland Lichtinger, Thilo Bein
Shorter development times and increasing cost-efficiency make it necessary to predict the reliability of electronic assemblies at an early stage. Within this framework, this work focuses on the influence of load and geometric parameters on the solder fatigue life of Quad Flat No Leads (QFN) components. Following a Design of Experiments (DoE) test plan, the following design parameters affecting the
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Molecular dynamics simulations on mechanical behaviors of sintered nanocopper in power electronics packaging Microelectron. Reliab. (IF 1.6) Pub Date : 2023-11-30 Runding Luo, Dong Hu, Cheng Qian, Xu Liu, Xuejun Fan, Guoqi Zhang, Jiajie Fan
Nano-metal materials have received considerable attention because of their promising performance in wide bandgap semiconductor packaging. In this study, molecular dynamics (MD) simulation was performed to simulate the nano-Cu sintering mechanism and the subsequent mechanical behaviors. Hybrid sintering, comprising nanosphere (NS) and nanoflake (NF), was performed at temperatures from 500 to 650 K.
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Modelling and mitigating oscillation in E-mode GaN HEMT: A simulation-based approach to parasitic inductance optimization Microelectron. Reliab. (IF 1.6) Pub Date : 2023-11-30 Xinzhi Liu, Suhaidi Shafie, Mohd Amran Mohd Radzi, Norhafiz Azis, Abdul Hafiz Abdul Karim
The escalating demands in energy conversion necessitate the evolution of efficient power electronic devices beyond the limitations of traditional silicon (Si) counterparts. This research delves into the intricacies of the Enhancement mode Gallium Nitride High Electron Mobility Transistor (E-mode GaN HEMT). A focus is placed on its static characterization, parameter analysis, and the influence of external
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Current imbalance analysis of multichip influenced by parasitic inductance within PP-IEGT Microelectron. Reliab. (IF 1.6) Pub Date : 2023-11-25 Zhiqiang Wang, Siyang Dai, Yao Zhao, Guofeng Li, Bing Ji, Volker Pickert, Bowen Gu, Shuai Ding
The Press-Pack Injection Enhanced Gate Transistor (PP-IEGT) technology is frequently employed in converters for high power systems. In the device packaging, the imbalanced current sharing among chips has become a significant issue for device reliability. Considering the semiconductor structure of IEGT is different from the conventional power devices, the main prerequisite for fully quantifying the
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Total ionizing dose and single event effect response of 22 nm ultra-thin body and buried oxide fully depleted silicon-on-insulator technology Microelectron. Reliab. (IF 1.6) Pub Date : 2023-11-28 Yanan Yin, Han Ma, Qiwen Zheng, Jiawei Chen, Xinpei Duan, Pingwei Zhang, Xinjie Zhou
The test chip including transistors and Static Random Access Memory (SRAM) is proposed and fabricated by an advanced 22 nm Ultra-Thin Body and Buried Oxide Fully Depleted Silicon-on-Insulator (UTBB FD-SOI) technology. Experimental results of Co-60 irradiation and heavy ion experiments are presented. Total Ionizing Dose (TID) experiment results show that the threshold voltage shift of the transistor
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ECS an endeavor towards providing similar cache reliability behavior in different programs Microelectron. Reliab. (IF 1.6) Pub Date : 2023-11-28 Mohammad Hasan Ahmadilivani, Mohammad Moeini Jahromi, Mostafa E. Salehi, Mona Kargar
The reliability of embedded processors is one of the major concerns in safety-critical applications. Reliability, in particular, is expressed within the cache memories which are the largest element of processors, and consequently one of the most vulnerable components that can remarkably affect the reliability, especially in deep transistor scaling. Therefore, evaluating the cache vulnerability is crucial
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A breakthrough for temperature and linearity stability from device to circuit-level with 14 nm junctionless SOI FinFET: Advancing K-band LNA performance Microelectron. Reliab. (IF 1.6) Pub Date : 2023-11-21 Amir Khodabakhsh, Mohammad Fallahnejad, Mahdi Vadizadeh
SOI junctionless (JL) FinFETs are well-suited for future wireless communication systems; however, they suffer from the self-heating effect (SHE), which diminishes performance at higher temperatures. We proposed a novel structure called p-layer JL-FinFET (pL-JL-FinFET) to improve high-frequency performance at high temperatures. The Ge p-layer beneath the Silicon Fin increases electron current density
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Bond-pad damage in ultrasonic wedge bonding Microelectron. Reliab. (IF 1.6) Pub Date : 2023-11-22 Milad Khajehvand, Henri Seppänen, Panthea Sepehrband
Utilizing SEM/EDX analysis, microscale fracture at the bond-pad is detected when Cu wire is wedge bonded to a Cu or Al substrate. It is found that when a bond is fractured by pulling the wire similar to a pull test, a bulge on the wire and a cavity in the substrate are formed and fracture occurs in the original substrate. Using a 3D optical profiler, it is revealed that for a constant bond force and
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Wavelet-based rapid identification of IGBT switch breakdown in voltage source converter Microelectron. Reliab. (IF 1.6) Pub Date : 2023-11-22 Sankha Subhra Ghosh, Surajit Chattopadhyay, Arabinda Das, Nageswara Rao Medikondu, Abdulkarem H.M. Almawgani, Adam R.H. Alhawari, Sudipta Das
The power electronic converters have drawn a lot of attention from investigators in recent years. Modern power electronics converters rely heavily on insulated gate bipolar transistors (IGBT). Conventional distribution systems may be made more reliable, stable, and secure by using a microgrid (MG). An acceptable, enticing, and useful option for power distribution networks is inverter-based MGs. This
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Performance optimized approximate multiplier architecture ST-AxM - based on statistical analysis and static compensation Microelectron. Reliab. (IF 1.6) Pub Date : 2023-11-17 Sukanya Balasubramani, Uma Jagadeeshan, Umapathi Krishnamoorthy
In this study, our primary aim is to develop a highly efficient multiplier architecture tailored for approximate computing, with a specific focus on optimizing power efficiency. Multiplication constitutes a fundamental operation in computing, profoundly impacting applications ranging from signal processing to artificial intelligence. The emerging paradigm of approximate computing seeks to enhance hardware
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Low-temperature deuterium annealing for improved electrical characteristics of SONOS Microelectron. Reliab. (IF 1.6) Pub Date : 2023-11-15 Dae-Han Jung, Sung-Su Yoon, Dong-Hyun Wang, Ja-Yun Ku, Tae-Hyun Kil, Dong-Ho Kim, Jun-Young Park
Deuterium annealing is a promising process technology for CMOS fabrication. Deuterium annealing effectively passivates interface traps at the Si-SiO2 interface, allowing for improvements in the electrical characteristics and reliability of CMOS. However, conventional deuterium annealing is typically performed at high temperatures above 400 °C, which can lead to unwanted dopant deactivation, random
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A study on memory characteristics of hybrid-based charge trap-type organic non-volatile memory device according to gate stack thickness Microelectron. Reliab. (IF 1.6) Pub Date : 2023-11-09 Jun Hyup Jin, Min Ju Kim
Continuous research on charge trap-type organic non-volatile memory (CT-ONVM) devices aims to achieve highly reliable large memory window characteristics, comparable to inorganic-based poly-silicon/oxide/nitride/oxide/silicon (SONOS) devices. This study introduces hybrid-based ultra-thin films via the initiated chemical vapor deposition (iCVD) process as the gate-stack of highly reliable CT-ONVM devices
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Evaluation of bonding techniques for ultrasound transducers Microelectron. Reliab. (IF 1.6) Pub Date : 2023-11-07 Per Kristian Bolstad, Martijn Frijlink, Lars Hoff
Development of ultrasound transducers for operation in high pressure and high temperature environments is still a challenge. This paper presents an evaluation of different bonding techniques for ultrasound transducers intended for harsh environments. Performance at temperature 180 °C was investigated at atmospheric pressure, and performance under hydrostatic pressure 1000 bar was investigated at temperature
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The effect of Si3N4/Al2O3 stacked structure of AlGaN/GaN HEMTs Microelectron. Reliab. (IF 1.6) Pub Date : 2023-11-01 Yanhui Xing, Zishuo Han, Xingjie Huang, Guohao Yu, Can Yin, Baolu Guan, Jun Han, Baoshun Zhang, Zhongming Zeng
Excessive gate leakage current and current collapse effects are the critical reliability issues for GaN-based high electron mobility transistors (HEMTs). In this paper, Si3N4 passivation layers was grown separately on p-GaN gate HRCL-HEMTs with or without Al2O3 film, and the gate leakage and current collapse effects of the devices and their intrinsic mechanisms were investigated. It is found that the
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First results on 1.2 kV SiC MOSFET body diode robustness tests Microelectron. Reliab. (IF 1.6) Pub Date : 2023-10-29 Hassan Hamad, Dominique Tournier, Jean-Michel Reynes, Olivier Perrotin, David Trémouilles, Régis Meuret, Dominique Planson, Hervé Morel
The paper proposes a methodology study to analyze the body diode robustness of SiC MOSFETs. Devices from different manufacturers are used to validate the analysis. Two types of stresses have been applied: a continuous conduction test (BDCT) or a pulsed conduction test, the classical half-sine surge current test applied to body diodes, BDSCT. BDCT applied current must be limited to avoid damages related
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Finite element modeling and analysis method for predicting and optimizing the warpage of construction before flip chip bonding in System-on-Wafer process flow Microelectron. Reliab. (IF 1.6) Pub Date : 2023-10-21 Yuanxing Duan, Guandong Liu, Weihao Wang, Qingwen Deng, Jie Li, Rong Cao, Chuanzhi Wang
As one of the solutions to surpass the limitations of Moore's Law in the post-Moore era, System-on-Wafer (SoW) technology provides the capability to integrate multiple chip components onto a single silicon wafer. A new high-density integrated SoW solution is discussed in this article. However, significant warpage can result from mismatches in the coefficients of thermal expansion (CTE) of different
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Reliability forecasting and Accelerated Lifetime Testing in advanced CMOS technologies Microelectron. Reliab. (IF 1.6) Pub Date : 2023-10-20 Karan Singh, Shruti Kalra
This study harnesses a machine learning approach to precisely forecast the reliability of 22 nm Bulk Complementary Metal Oxide Transistor (CMOS) and 22 nm Metal Gate High-k (MGK) technologies, particularly at room temperature. Extending its capabilities, it also delves into the realm of varying temperature conditions and the rigors of Accelerated Lifetime Testing (ALT), employing advanced statistical
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Influence of electron beam irradiation induced charging-effect on nanoprobing localization of a crystal defect in MOSFET Microelectron. Reliab. (IF 1.6) Pub Date : 2023-10-17 Shijun Zheng, Jianli Yang, Mei Du, Yi Che, Lin Zhai
The paper demonstrates that the electron beam (e-beam) irradiation induced charging-effect has remarkable impact on nanoprobing localization of a crystal defect hidden in metal-oxide-semiconductor field-effect transistor (MOSFET). We present a practical example showing that device characterization at the contact layer (CT) is susceptible to the charging-effect since scanning electron microscopy (SEM)
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Thermo-sensitive electrical parameters of high-power IGBTs based on gate-emitter voltage measurement during switching delay intervals Microelectron. Reliab. (IF 1.6) Pub Date : 2023-10-18 Subhas Chandra Das, G. Narayanan
High-power insulated gate bipolar transistors (IGBTs) are widely used for wind power conversion and electric traction. Accurate estimation of IGBT junction temperature and active thermal control improve the reliability of power converters in such applications. Among the various available methods for junction temperature estimation, thermo-sensitive electrical parameter (TSEP) based estimation is simple