-
Rolling reliability of polyurethane and polyurethane-acrylic ICAs interconnections on printed stretchable electronics Microelectron. Reliab. (IF 1.535) Pub Date : 2021-03-02 Zhao Fu; Vänni Panula; Behnam Khorramdel; Matti Mäntysalo
In this study, bending reliability of the surface mounted devices (SMD) attached using isotropic conductive adhesive (ICAs) on screen printed stretchable devices polyurethane substrate are investigated. The performance of polyurethane and polyurethane-acrylic ICAs and the impact of rolling speed are studied. The rolling test was performed using the customized automatic rolling test device. It was found
-
Electromigration in solder joints: A cross-sectioned model system for real-time observation Microelectron. Reliab. (IF 1.535) Pub Date : 2021-03-02 Mostafa AbdelAziz; Di Erick Xu; Guotao Wang; Michael Mayer
-
Memoryless nonlinearity in IT JL FinFET with spacer technology: Investigation towards reliability Microelectron. Reliab. (IF 1.535) Pub Date : 2021-03-01 B. Vandana; S.K. Mohapatra; J.K. Das; K.P. Pradhan; A. Kundu; B.K. Kaushik
This work investigates the reliability assessment of high-k spacer and the effect of temperature on the device analog/RF performance for Inverted ‘T' (IT) Junctionless (JL) FinFET. A systematic analysis is performed for different high-k spacer materials, like, SiO2, Si3N4, and HfO2 to improve the analog/RF performances. This work also represents the effect of oxide stacking i.e., low-k on high-k materials
-
A comparative study of thermal fatigue life of Eutectic Sn-Bi, Hybrid Sn-Bi/SAC and SAC solder alloy BGAs Microelectron. Reliab. (IF 1.535) Pub Date : 2021-02-26 Chongyang Cai; Jiefeng Xu; Huayan Wang; S.B. Park
Low melting temperature solders are becoming a hot topic in Pb-free solder studies. Among these solders, SnBi has attracted more attention because it can not only reduce the energy for reflow, but more importantly, increase the reliability of joints by minimizing warpage. In this study, the board-level reliability of the assembly of BGA components was investigated. Three types of assemblies are compared:
-
Dynamic resistance variation mapping technique for defect isolation Microelectron. Reliab. (IF 1.535) Pub Date : 2021-02-25 M.H. Thor; S.H. Goh; B.L. Yeoh; Y.H. Chan
In this work, we enhance tester-based laser induced techniques to detect defects that cannot be assessed by simple chip power-up and require test cycles to initialize the chip. A statistical resistance variation mapping method is proposed and described. Experimental results will be presented as proof-of-concept.
-
Effect of solder joint size and composition on liquid-assisted healing Microelectron. Reliab. (IF 1.535) Pub Date : 2021-02-25 Georg Siroky; Elke Kraker; Julien Magnien; David Melinc; Dietmar Kieslinger; Ernst Kozeschnik; Werner Ecker
-
Prediction of software reliability Microelectron. Reliab. (IF 1.535) Pub Date : 2021-02-24 Willem D. van Driel; J.W. Bikker; M. Tijink
It is known that quantitative measures for the reliability of software systems can be derived from software reliability models. And, as such, support the product development process. Over the past four decades, research activities in this area have been performed. As a result, many software reliability models have been proposed. It was shown that, once these models reach a certain level of convergence
-
Stress/strain characterization in electronic packaging by micro-Raman spectroscopy: A review Microelectron. Reliab. (IF 1.535) Pub Date : 2021-02-18 Lulu Ma; Wei Qiu; Xuejun Fan
In this review, a review a of the applications of micro-Raman spectroscopy (μRS) to characterize the residual strain and/or stress in electronic packaging is presented. Micro-Raman spectroscopy is considered as an effective tool for residual stress evaluation in semiconductor devices at the microscale level due to its nondestructive, noncontact feature with high spatial resolution. In this review,
-
Influence of post-bonding heating process on the long-term reliability of Cu/Al contact Microelectron. Reliab. (IF 1.535) Pub Date : 2021-02-17 Motoki Eto; Noritoshi Araki; Takashi Yamada; Masaaki Sugiyama; Shinji Fujimoto
Copper (Cu) wire bonding had been increasingly used in the LST devices in the last decade, especially in the consumer product due to the cost advantage over gold (Au) wire. Recently, needs for replacing Au wire with Cu wire is increasing also automotive industry where electronic devices need to survive harsher environment for a much longer period of time as compared with consumer product. Accordingly
-
Stochastic behavioral models for system level reliability analysis including non-normal and correlated process variation Microelectron. Reliab. (IF 1.535) Pub Date : 2021-02-13 Maike Taddiken; Theodor Hillebrand; Dagmar Peters-Drolshagen; Steffen Paul
The behavior of modern integrated circuits is altered by numerous effects such as process variation, voltage or temperature shifts and aging (PVTA). To evaluate the impact on system level, extensive simulations must be carried out on transistor-level which is not applicable for larger systems. This paper presents methods for the generation of stochastic behavioral models (SBMs) of circuit components
-
Computational evaluation of optimal reservoir and sink lengths for threshold current density of electromigration damage considering void and hillock formation Microelectron. Reliab. (IF 1.535) Pub Date : 2021-02-10 Ryuji Takaya; Kazuhiko Sasagawa; Takeshi Moriwaki; Kazuhiro Fujisaki
Reservoirs, extensions at the cathode-end, are constructed to extend the lifetime of integrated circuit (IC) lines in terms of electromigration (EM) damage. The threshold current density jth is the maximum current density that can be supported without causing EM damage due to the matching of the EM driving force and the back flow force, which is related to the atomic density gradient. In a previous
-
Engineering application research on reliability prediction of the combined DC-DC power supply Microelectron. Reliab. (IF 1.535) Pub Date : 2021-02-11 Yuchen He; Haiming Zhang; Pingzhou Wang; Yunzhi Huang; Zhiwei Chen; Yingying Zhang
The combined DC-DC power supply is widely used in communication, aerospace and other fields because of its low power consumption, high efficiency, small volume, high reliability, modularization and so on. As the core component of power electronic system, its reliability prediction research has far-reaching practical significance. In this paper, the engineering application of reliability prediction
-
Thermal characterization of GaN lateral power HEMTs on Si, SOI, and poly-AlN substrates Microelectron. Reliab. (IF 1.535) Pub Date : 2021-02-10 Alessandro Magnani; Thibault Cosnier; Nooshin Amirifar; Urmimala Chatterjee; Ming Zhao; Xiangdong Li; Karen Geens; Stefaan Decoutere
In this work, the thermal behavior of GaN HEMTs is studied with a three-fold contribution: (i) test structures for resistive thermometry are introduced and manufactured; (ii) subsequently, those are used to perform the on-wafer thermal characterization of small and power HEMTs on SOI, and poly-AlN (QST®) with the aim of comparing the thermal resistance with respect to the reference Si counterpart;
-
Improving the reliability of SRAM-based PUFs under varying operation conditions and aging degradation Microelectron. Reliab. (IF 1.535) Pub Date : 2021-02-10 P. Saraza-Canflanca; H. Carrasco-Lopez; A. Santana-Andreo; P. Brox; R. Castro-Lopez; E. Roca; F.V. Fernandez
The utilization of power-up values in SRAM cells to generate PUF responses for chip identification is a subject of intense study. The cells used for this purpose must be stable, i.e., the cell should always power-up to the same value (either ‘0’ or ‘1’). Otherwise, they would not be suitable for the identification. Some methods have been presented that aim at increasing the reliability of SRAM PUFs
-
Study on the influence of fretting wear on electrical performance of SMA connector Microelectron. Reliab. (IF 1.535) Pub Date : 2021-02-06 Chenzefang Feng; Xinxin Lin; Jianxiong Hu; Ben Shen; Zhou Hu; Fulong Zhu
Fretting wear induced by micro motion is one of the most important factors that affect the electrical contact performance of all electrical connectors. The insertion/withdrawal experiments of certain Sub-Miniature version A (SMA) connector were carried out based on the micro vibration test system. As well as the peak value of the insertion force, the larger the steady-state value of the pullout force
-
Ruggedness of Dual-GCT against dynamic avalanche and surge current Microelectron. Reliab. (IF 1.535) Pub Date : 2021-02-04 Wuhua Yang; Cailin Wang; Jing Yang; Qi Zhang; Le Su
Based on multi-cell structure model, the ruggedness of Dual Gate Commutated Thyristor (Dual GCT) against dynamic avalanche and surge current is examined by the device simulation. The simulation results of turn-off behavior show at smaller turn-off delay time, the current filament caused by dynamic avalanche arises in the GCT-A part, which is adverse for the device, and at larger turn-off delay time
-
FEM model calibration for simulation aided thermal design Microelectron. Reliab. (IF 1.535) Pub Date : 2021-02-04 R. Cioban; Sz. Szőke; D. Zaharie-B; Z. Kórádi; C. Leordean; S. Simon
Thermal management is a crucial aspect of electronic assemblies and simulations are playing an important role in decision making during the design phase. For an electronic control unit (ECU), the main heat generating sources are the electronic components soldered on the printed circuit board (PCB). Creating high quality thermal models for the associated components, required in the assembly level simulations
-
Reliability analysis for TO-247 multilayered power module packaging under mechanical oscillation based on finite element method Microelectron. Reliab. (IF 1.535) Pub Date : 2021-02-03 Davood Ghaderi
This paper presents the simulation and hardware test results for determining the fatigue life of the solder joints of a printed circuit board (PCB) including a DC to AC inverter circuit with six power metal oxide semiconductor field effect transistors (MOSFETs) by using the finite element method (FEM) under different vibration effects. This board is exposed under different angles by a vibration machine
-
Reduced length redundancy adaptive protection for the cascaded integrator-comb interpolation filter on FPGA Microelectron. Reliab. (IF 1.535) Pub Date : 2021-02-01 Kyle W. Gear; Alfonso Sánchez-Macián; Juan Antonio Maestro
Cascaded Integrator-Comb filters are a popular choice of filter for use as an interpolator in FPGAs due to their efficient multiplierless design, such as within an on-board satellite communication module. Electronics in space have the problem of being highly susceptible to cosmic radiation, due to the lack of magnetosphere and therefore require some form of protection from Single Event Upsets (SEUs)
-
Single Event Effects in 0.18 μm Pinned Photodiode CMOS Image Sensors: SEU and SEFI Microelectron. Reliab. (IF 1.535) Pub Date : 2021-01-26 Yu long Cai; Qi Guo; Lin Wen; Dong Zhou; Jie Feng; Bing kai Liu; Jing Fu; Yu Dong Li
CMOS Image Sensors (CISs) can easily be susceptible to heavy-ion radiation in space applications. The sensitivity of Single Event Effect (SEE) in CIS is explored by heavy ion broad beam experiments and laser experiments. Pinned Photodiode (PPD) CMOS Image Sensors were exposed to heavy ions with Linear Energy Transfer (LET) (8.62–81.35 MeV cm2 mg−1). The digital peripheral circuits of CIS studied were
-
Design for reliability: Tradeoffs between lifetime and performance due to electromigration Microelectron. Reliab. (IF 1.535) Pub Date : 2021-01-23 Francis Wolff; Daniel Weyer; Chris Papachristou; Steve Clay
Semiconductor aging and its causes have been well understood, however until recently, aging has not been a design concern. The expected lifetime of integrated circuit (IC) components has been far longer than their intended applications. As device geometries are reduced, consideration early in the design process to aging and product lifetimes become more significant for successful IC design and development
-
Effects of bismuth additions on mechanical property and microstructure of SAC-Bi solder joint under current stressing Microelectron. Reliab. (IF 1.535) Pub Date : 2021-01-22 Siou-Han Hu; Ting-Chun Lin; Chin-Li Kao; Fei-Ya Huang; Yi-Yun Tsai; Shih-Chieh Hsiao; Jui-Chao Kuo
Bi additions have been reported to improve the wettability and drop-impact performance. Most important of all, it improves the mechanical properties. However, few studies focus on the effect of the Bi addition on mechanical properties and microstructure of intermetallic compounds (IMCs) in solder balls, especially on those properties after current stressing. In this study, to understand the effect
-
Nonlinear error analysis and calibration model for cyclic ADCs in large array CMOS image sensors Microelectron. Reliab. (IF 1.535) Pub Date : 2021-01-20 Jiangtao Xu; Tingting Li; Kaiming Nie; Zhiyuan Gao
A mathematical model is established to study the impact of nonlinear errors on the performance of cyclic analog-to-digital converters (ADCs) and imaging quality of CMOS image sensors (CIS). And a radix-based foreground digital calibration method for cyclic ADCs in large array CIS is proposed and modeled. The nonlinear errors caused by capacitor mismatch and finite operational amplifier (OPAMP) gain
-
Effect of mounting fixture on the drop reliability of solid state drive Microelectron. Reliab. (IF 1.535) Pub Date : 2021-01-18 In Jun Jeong; Dong-Kil Shin
The drop reliability of an M.2 module was investigated. The module is a next generation form factor of solid state drive. Considering the actual installation conditions in which the module is mounted on a main board with a socket and screw, three pairs of mounting fixtures including clamp were examined under the conditions that the module was directly mounted on a free fall drop table. Accelerations
-
The investigation of current condition mechanism of Al/Y2O3/p-Si Schottky barrier diodes in wide range temperature and illuminate Microelectron. Reliab. (IF 1.535) Pub Date : 2021-01-18 Ömer Sevgili; İkram Orak
Yttrium oxide (Y2O3) powder was used as an interface layer between metal (Al) and semiconductor (p-Si). Y2O3 powder was coated with a spin-coating method on the p-Si and the Al/Y2O3/p-Si Schottky Barrier Diodes (SBD) was fabricated. The electrical characteristics of the fabricated SBD were analyzed at various temperatures and compared with each other. While ΦB0 decrease from 0.931 eV to 0.211 eV, n
-
Impact of electric field at rough copper lines on failure time due to electrochemical migration in PCBs Microelectron. Reliab. (IF 1.535) Pub Date : 2021-01-17 Georg Reiss; Barbara Kosednar-Legenstein; Johann Riedler; Werner Eßl
-
A memristor-based sensing and repair system for photovoltaic modules Microelectron. Reliab. (IF 1.535) Pub Date : 2021-01-15 Luca Gnoli; Fabrizio Riente; Marco Ottavi; Marco Vacca
Among renewable energy sources the sun is certainly one of the easiest to exploit. Solar panels allow generating electrical energy but they generally have low efficiency. It is therefore important to optimize a solar module to maximize its energy production. Faults can have for example a big impact on the amount of energy production, and should be avoided if possible. This goal can be achieved by designing
-
The influence of glass particle size on the interfacial bonding strength of Au/ceramic co-fired structure Microelectron. Reliab. (IF 1.535) Pub Date : 2021-01-13 Tingnan Yan; Weijun Zhang; Xingyu Chen; Fenglin Wang; Zhuofeng Liu
Gold electrode is preferable in extreme environments, but few reports focus on gold electrode for LTCC application. In this article, CaO–B2O3–SiO2 glass powder used in the gold paste with different particle size was prepared. The sintering shrinkage behavior of CaO–B2O3–SiO2 green tapes and gold paste were investigated. The blisters of gold electrode and corresponding mechanism during sintering process
-
A statistical study into reliability of FPGA implemented circuits: Simulation and modelling Microelectron. Reliab. (IF 1.535) Pub Date : 2021-01-11 J.D. Aguirre-Morales; F. Marc
In this work, we report on the development of a methodology to study the reliability of digital circuits implemented in FPGA. For this, the design and simulation tools have been extended to introduce aging. The aging laws for Look-Up Tables, describing the drifts in the propagation time, caused by Hot Carrier Injection and Negative Bias Temperature Instability degradation mechanisms, have been integrated
-
Soft error hardened voltage bootstrapped Schmitt trigger design for reliable circuits Microelectron. Reliab. (IF 1.535) Pub Date : 2021-01-09 Neha Gupta; Ambika Prasad Shah; Rana Sagar Kumar; Gopal Raut; Narendra Singh Dhakad; Santosh Kumar Vishvakarma
Bias Temperature Instability and soft error rate are the major reliability issue with the technology scaling. BTI leads to an increase in the threshold voltage of the MOS transistors, which reduces the drain current. The threshold voltage of the PMOS transistor increases due to NBTI with stress time, which degrades the circuit performance. In this paper, we propose a novel reliable voltage bootstrapped
-
Predicting and mitigating single-event upsets in DRAM using HOTH Microelectron. Reliab. (IF 1.535) Pub Date : 2021-01-09 Stephen Longofono; Donald Kline; Rami Melhem; Alex K. Jones
There is a growing demand for using commodity memory and storage solutions to make commercial aerospace ventures economically feasible. Existing radiation-hardened computer systems cannot meet this need alone. These hardened systems provide sufficient protection against the harsh environment of the upper atmosphere and low-Earth orbit, but require dramatically increased cost and utilize commercially
-
Securing RSA hardware accelerators through residue checking Microelectron. Reliab. (IF 1.535) Pub Date : 2020-12-16 Ana Lasheras; Ramon Canal; Eva Rodríguez; Luca Cassano
Circuits for the hardware acceleration of cryptographic algorithms are ubiquitously deployed in consumer and industrial products. Although being secure from a mathematical point of view, such accelerators may expose several vulnerabilities strictly related to the hardware implementation. Differential fault analysis (DFA) and hardware Trojan horses (HWTs) may be exploited to steal secret information
-
Effects of thermal neutron radiation on a hardware-implemented machine learning algorithm Microelectron. Reliab. (IF 1.535) Pub Date : 2020-12-14 M. Garay Trindade; F. Benevenuti; M. Letiche; J. Beaucour; F. Kastensmidt; R. Possamai Bastos
Hardware-implemented machine learning algorithms are finding their way in various domains, including safety-critical applications. This has demanded these algorithms to perform correctly even in harsh environmental conditions, such as in avionics altitudes. Support Vector Machine (SVM) is an important Machine Learning that has been target of hardware implementation in recent years. This is the first
-
Ionizing radiation damage in 65 nm CMOS technology: Influence of geometry, bias and temperature at ultra-high doses Microelectron. Reliab. (IF 1.535) Pub Date : 2020-12-10 G. Borghello; E. Lerario; F. Faccio; H.D. Koch; G. Termo; S. Michelis; F.J. Marquez; F.R. Palomo; F. Muñoz
We studied the radiation response of 3 different 65 CMOS planar technologies at the ultra-high doses expected to be reached in the HL-LHC, the upgraded large hadron collider of CERN. All the processes studied are sensitive to radiation and show similar degradation mechanisms and, albeit with different intensities, similar dependencies on device geometry, applied polarization and temperature. The results
-
Characterization method of IGBT comprehensive health index based on online status data Microelectron. Reliab. (IF 1.535) Pub Date : 2020-12-10 Jinli Zhang; Jinbao Hu; Hailong You; Renxu Jia; Xiaowen Wang; Xiaowen Zhang
IGBT has multiple degradation mechanisms. The existing methods using a single characterization parameter cannot characterize the comprehensive health status of the device, but multiple characterization parameters cannot quantify and intuitively reflect the comprehensive health level. Therefore, this paper proposes a characterization method of IGBT comprehensive health index (CHI) based on online status
-
A study on the interfacial adhesion energy between capping layer and dielectric for cu interconnects Microelectron. Reliab. (IF 1.535) Pub Date : 2020-12-09 Cheol Kim; Kirak Son; Gahui Kim; Sungtae Kim; Sol-Kyu Lee; So-Yeon Lee; Young-Bae Park; Young-Chang Joo
Recently, Cu interconnect and low-k materials have been applied to reduce the interconnect resistive-capacitive delay issue. However, as the process node size is reduced to a few nanometers, high leakage currents appear through the dielectric under high electric fields. Therefore, issues of Cu diffusion at the interface between the dielectric and the capping layer have been reported. This study investigated
-
Latency optimized clustered error mitigation for multi-level flash memory using product code Microelectron. Reliab. (IF 1.535) Pub Date : 2020-12-09 Swagata Mandal; Amlan Chakrabarti
Soft errors due to radiation-induced multi-bit upsets (MBUs) are very prominent in the present flash memories built with ultra large scale VLSI technology. Use of multi-level cells in flash memories increase the chance of adjacent MBUs or clustered error. Single bit error detection and correction (EDAC) codes are not enough to mitigate the effect of clustered error due to their small error correction
-
Investigation on γ radiation effects of N-channel VDMOSFETs irradiated without electric field stress Microelectron. Reliab. (IF 1.535) Pub Date : 2020-12-04 Guang Zeng; Xuqiang Liu; Guixia Yang; Lei Li; Xiaochi Chen; Yuan Jian; Sha Zhu; Yuanlong Pang
The ionizing radiation response of a kind of commercial n-channel VDMOSFETs irradiated without external electric field stress is investigated. The effects of total dose, dose rate and H2 ambient on the radiation response, and the post-irradiation annealing behaviors of the devices have been explored. The devices are degraded obviously after 1200 Gy (Si) γ radiation. No appreciable true dose rate effect
-
Structural and optical effects of low dose rate Co-60 gamma irradiation on PbS thin films Microelectron. Reliab. (IF 1.535) Pub Date : 2020-12-05 A. Ismail; M. Alahmad; H. Kashoua; M. Alsabagh; B. Abdallah
Thin films of lead sulphide (PbS) were grown on the Si (100) and glass substrates using the simple chemical bath deposition (CBD) method. The prepared films had the cubic structure at room temperature, and the thickness was 350 nm at a 120 min deposition time. In this work, the effect of low-dose rate gamma irradiation on the structural and optical characteristics of the prepared thin films was investigated
-
Dielectric investigation of In4Se96-xSx semiconductor: Relaxation and conduction mechanism Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-30 Mohsin Ganaie; M. Zulfequar
Dielectric properties of amorphous semiconductor has been observed in the frequency range of 1 kHz – 1 MHz and a temperature range of 300 K–370 K. Dielectric dispersion is observed in the present samples which is dipolar in nature. The decrease in the dielectric parameter with Sulfur concentration may be due to the decrease in density of defect states. DC conduction loss is smaller than the observed
-
Degradation modeling with spatial mapping method in low temperature poly silicon thin film transistor aged off-state bias Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-25 Kihwan Kim; Minjoon Song; Soonkon Kim; Hyojung Kim; Sangho Jeon; Youngmi Cho; Yongjo Kim; Byoungdeog Choi
We conducted experimental and quantitative studies on the effects of off-state bias stress of the p-type polycrystalline silicon thin film transistors, and present a degradation model using spatial mapping simulations. In the off-state bias stress condition, the gate induced drain leakage current (GIDL) is determined by the gate and drain voltage (Vgd), and the gate bias stress above a certain bias
-
Stitch-bond reliability evaluation by construction analysis Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-23 Hossein Akbari; Amandine Battentier; Francois Barbara; Steven O. Dunford
Electronic components have changed the way we live and the way we use technology since they were first introduced into products. Most equipment is only as reliable as its internal electronic components. In electronic integrated circuit (IC) components, wire bonding is the most common first-level interconnection method between die and lead. Failure of wire bonds can have very costly consequences in
-
Mechanical behavior investigation of press-fit connector based on finite element simulation and its reliability evaluation Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-20 Ruoyu Wang; Liangjun Xu
As the successor of soldering, the press-fit electrical connection is more and more widely used on account of a number of advantages, such as fast assembly. However, in practice, some contact failures were found. Most of the failures are related to the force which the structure bears. Because of complex elastic-plastic deformation characteristic, analyzing the mechanical behavior of the press-fit is
-
Cryogenic investigation of the negative pinch-off voltage Vpinch-off, leakage current and interface defects in the Al0.22Ga0.78N/GaN/SiC HEMT Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-20 I. Jabbari; M. Baira; H. Maaref; R. Mghaieth
A cryogenic investigation of the Cgs (Vgs) and the transfer Ids (Vgs) characteristics is suggested to monitor the evolution of the pinch-off voltage Vpinch-off of the AlGaN/GaN HEMTs transistors. An excessive gate leakage current of 117 mA has been identified from Igs (Vgs) measurements from 60 to 320 K. We have found that the negative shift of the Vpinch-off voltage was induced by an electron trap
-
Toward standardization of low impedance contact CDM Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-19 Nathan Jack; Brett Carn; Josh Morris
The 16.6 Ω implementation of contact CDM (LICCDM) recently published in ANSI-ESD Standard Practice 5.3.3 is shown to produce waveforms of similar shape, Ifail, and Ipeak vs. CDUT dependency as JS-002. The non-monotonicity of JS-002 at low voltages is overcome using LICCDM. A path to joint standardization with air discharge testing is proposed.
-
Improvement of negative bias temperature instability of LTPS TFTs by high pressure H2O annealing Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-14 Soonkon Kim; Hyojung Kim; Kihwan Kim; Pyungho Choi; Byoungdeog Choi
In this study, high pressure H2O annealing (HPA) was performed to improve the reliability of low temperature poly-Si thin film transistors (LTPS TFTs) fabricated on a polyimide (PI) substrate. Due to the low heat resistance of the PI substrate, the pressure was high to reduce the temperature of the heat treatment. HPA was performed at 130 °C and 0.3 Mpa in an H2O ambient for 2 h. After HPA treatment
-
Impact of inter-metallic compound thickness on thermo-mechanical reliability of solder joints in solar cell assembly Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-13 Musa T. Zarmai; Chike F. Oduoza
This study evaluates the impact of intermetallic compound (IMC) thickness on thermo-mechanical reliability of lead-free SnAgCu solder joints in crystalline silicon solar cell assembly with regard to fatigue life. Finite element modelling is used to simulate the non-linear thermo-mechanical deformation of the joints. Five geometric models of solar cell assemblies with different IMC thickness layers
-
Accelerated mechanical low cycle fatigue in isothermal solder interconnects Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-07 Cody J. Marbut; Bakhtiyar Nafis; David Huitink
Properly assessing the underlying physics of failure is critical in predicting the long term reliability of electronic packages in their intended field applications, yet traditional reliability demonstration methods are complicated by time and cost considerations as well as deterministic inadequacies when considering thermomechanical failures. In this work, an alternative reliability testing apparatus
-
Ionizing radiation hardness tests of GaN HEMTs for harsh environments Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-06 Alexis C. Vilas Bôas; M.A.A. de Melo; R.B.B. Santos; R. Giacomini; N.H. Medina; L.E. Seixas; S. Finco; F.R. Palomo; A. Romero-Maestre; Marcilei A. Guazzelli
The COTS power transistors based in GaN were exposed to TID effects by 10-keV X-rays. These HEMTs were tested in the On- and Off-state bias conditions. Switching tests were performed before and after irradiation steps. The devices were characterized at temperatures ranging from −50 °C to +75 °C. The results indicate that the GaN-technology is a great candidate to be used in harsh environments, because
-
The impact of total ionizing dose on RF performance of 130 nm PD SOI I/O nMOSFETs Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-07 Tiantian Xie; Hao Ge; Yinghuan Lv; Jing Chen
In this paper, the degradation mechanism of RF performance of 130 nm T-gate partially depleted (PD) silicon-on-insulator input-output nMOSFETs at different total ionizing dose levels has been investigated. RF figures of merit (the cut-off frequency fT, maximum oscillation frequency fmax) show significant degradation, about 26% and 80% respectively. The variation of the small signal parameters (output
-
Observation of single event burnout (SEB) in an SOI NLDMOSFET using a pulsed laser Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-07 Lei Shu; Chun-Hua Qi; Kenneth F. Galloway; Yuan-Fu Zhao; Wei-Yi Cao; Xin-Jian Li; Liang Wang; En-Xia Zhang; Xin-Sheng Wang; Rui-Xin Shi; Xin Zhou; Wei-Ping Chen; Ming Qiao; Bin Zhou; Chao-Ming Liu; Liang Ma; Yan Qing Zhang; Tian-Qi Wang
Single event burnout (SEB) of NLDMOSFETs on SOI initiated by pulsed laser irradiation is demonstrated for the first time. The sensitive region of the device for SEB and the effects of reverse voltage and laser energy are explored. The data indicate that the device is most sensitive to laser pulses in the drift region near the P-well. This is influenced by the electric field distribution in the drift
-
Extensive assessment of the charge-trapping kinetics in InGaAs MOS gate-stacks for the demonstration of improved BTI reliability Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-04 Vamsi Putcha; Jacopo Franco; Abhitosh Vais; Ben Kaczer; Qi Xie; Jan Willem Maes; Fu Tang; Michael Givens; Nadine Collaert; Dimitri Linten; Guido Groeseneken
Gate-stack reliability has been a major roadblock in the realization of InGaAs-channel based logic technology. Excessive charge trapping in the gate-oxide causes time-dependent drift in transistor threshold voltage (Vth). The extent to which Vth drifts under certain stress conditions depends on (i) the defect ground-state energy distributions in the oxide bandgap, and (ii) the specific activation energy
-
Influence of microstructure inhomogeneity on the current density and temperature gradient in microscale line-type Sn58Bi solder joints under current stressing Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-04 Hongbo Qin; Tianhan Liu; Wangyun Li; Wu Yue; Daoguo Yang
Due to the increasing miniaturization of microelectronic packaging, the electromigration (EM) phenomenon generally exists in microscale lead-free solder joints, which is mainly caused by high current stressing. To address the limitation of experimental measurement at a microscale, this study performed a finite element analysis (FEA) based on microstructure simulation and image recognition to characterize
-
Experimental characterization of rolled annealed copper film used in flexible printed circuit boards: Identification of the elastic-plastic and low-cycle fatigue behaviors Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-01 Gautier Girard; Marion Martiny; Sébastien Mercier
The elastic-plastic and low-cycle fatigue behaviors of copper films are studied experimentally and identified for further simulation works. A rolled annealed copper grade is considered here, as it is often used in flexible printed circuit boards for its mechanical resistance to high elongations. During operation, the printed circuit board (PCB) will undergo various loadings, whether purely mechanical
-
Field emission induced-damage in the actuation paths of MEMS capacitive structures Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-01 J. Theocharis; M. Koutsoureli; S. Gardelis; G. Konstantinidis; G. Papaioannou
The field emission and resulting breakdown induced damage in the actuation paths of MEMS capacitive switches are investigated. The effect of asperities burning due to Joule heating and the resulting explosive break down are presented. The breakdown gives rise to almost mirror craters formation on the cathode and anode electrodes. A linear relation between crater diameter and the breakdown current is
-
Degradation mechanisms in high power InGaN semiconductor lasers investigated by electrical, optical, spectral and C-DLTS measurements Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-01 F. Piva; C. De Santi; M. Buffolo; M. Taffarel; G. Meneghesso; E. Zanoni; M. Meneghini
The aim of this work is to study the degradation processes in high power InGaN semiconductor lasers, by means of electrical, optical, spectral and capacitance deep-level transient spectroscopy measurements. The devices were submitted to two different stress experiments, (i) a constant current stress at 1.5 A and 45 °C, and (ii) a temperature/bias step stress at 1 A and increasing temperature. Results
-
Robustness of pressure sensors with piezoresistive nanogauges up to 522 °C Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-01 A. Koumela; P. Brunet-Manquat; L. Joët; A. Berthelot; P. Rey
This paper examines the robustness of pressure sensors fabricated with the M&NEMS technology at high temperature for industrial applications. Thermal cycling up to 522 °C showed good reproducibility of results. Comparison of sensor sensitivity before and after thermal cycling was very satisfactory with a variation in the range of 4–5%. The wafer level packaging of the sensor withstands very well these
-
Simplified hybrid reliability simulation approach of a VSC DC grid with integration of an improved DC current flow controller Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-01 Puyu Wang; Song Wang; Xiao-Ping Zhang; Xin Zhao; Zhengrong Xiang; Chunyi Guo
In this paper, different reliability simulation approaches of an improved DC current flow controller (CFC) integrated voltage-sourced converter (VSC) based DC grids are investigated with the following contributions: (1) In order to achieve bidirectional power flow control and fault current blocking capability, an improved DC CFC topology with a set of reversed switches is analysed to enhance the controllable
-
Asynchronous early output majority voter and a relative-timed asynchronous TMR implementation Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-01 Padmanabhan P. Balasubramanian; Douglas L. Maskell; Nikos E. Mastorakis
This article presents a new asynchronous early output 3-input majority voter that is used to realize a high-speed, low power and less area occupying relative-timed asynchronous TMR implementation. The proposed majority voter is used to realize an asynchronous TMR implementation and it is compared with asynchronous TMR implementations realized using other asynchronous majority voters. The dual-rail
-
An error detecting scheme with input offset regulation for enhancing reliability of ultralow-voltage SRAM Microelectron. Reliab. (IF 1.535) Pub Date : 2020-11-01 Pan Yang; Xiaocan Ye; Yongxin Zhao; Wei Zhang; Shoumou Huang; Yang Huang; Yujie Wang
This paper proposes a new scheme to improve the reliability and reading yield of ultralow-voltage static random access memory (SRAM). The proposed scheme utilizes an error detecting sense amplifier (ED-SA) to constrain SRAM access timing, which combines timing error detection (TED) and correction. ED-SA applies different threshold transistors into the input terminals and regulates input offsets (Voffset)
Contents have been reproduced by permission of the publishers.