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Table of contents IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-12-30
Presents the table of contents for this issue of this publication.
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IEEE Microwave and Wireless Components Letters publication information IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-12-30
Provides a listing of current staff, committee members and society officers.
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On the Acceleration of the Vector Fitting for Multiport Large-Scale Macromodeling IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-16 Chiu-Chih Chou; José E. Schutt-Ainé
Vector fitting (VF) is a robust macromodeling method to construct rational models of a network based on tabulated frequency responses. When fitting a network with a large number of ports, the matrix equation in VF quickly grows into a formidable size. The conventional strategy is to break the equation into several small QR factorizations and then combine the results into a least-squares (LS) problem
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Dielectric-Loaded TM01–TE11 Mode Converters for Wideband Applications IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-05 Mohammad Mahdi Honari; Rashid Mirzavand
In this letter, a new wideband dielectric-loaded TM 01 –TE 11 mode converter is proposed. It is shown that a new hexagon metallic sheet (HMS) placed in the middle of a circular waveguide has a lower reflection of the TM 01 mode compared to a rectangular metallic sheet. Using such HMS in the structure of dielectric-loaded TM 01 –TE 11 mode converters can enhance the operational bandwidth significantly
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Compact Low-Loss Chip-to-Waveguide and Chip-to-Chip Packaging Concept Using EBG Structures IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-11 Ahmed Hassona; Vessen Vassilev; Ashraf Uz Zaman; Victor Belitsky; Herbert Zirath
This letter presents a novel approach for packaging millimeter-wave (mmW) and terahertz (THz) circuits. The proposed technique relies on using an on-chip coupling structure that couples the signal to a quarter-wavelength cavity, which in turn couples to either a waveguide (WG) or another chip. The solution also uses a periodic electromagnetic bandgap (EBG) structure that controls the electromagnetic
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Accurate Synthesis of Extracted-Pole Filters by Topology Transformations IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-16 Steven Caicedo Mejillones; Matteo Oldoni; Stefano Moscato; Giuseppe Macchiarella; Michele D’Amico; G. G. Gentili
This letter presents a novel, simpler, and more accurate synthesis method for inline extracted-pole low-pass prototype filters. At the present, this topology is only synthesized by using section extraction or optimization methods, known to suffer from accuracy problems, especially for high-order filters. The method described in this letter relies on the robustness and accuracy of the coupling-matrix
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Synthesis of Extracted Pole Filters With Transmission Zeros in Both Stopbands and Nonresonant Nodes of the Same Nature IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-16 Eloi Guerrero; Jordi Verdú; Pedro de Paco
Extracted pole filters alternating transmission zeros (TZs) above and below the passband are intrinsically related to the use of nonresonant nodes (NRNs) of different nature (inductive and capacitive). This work demonstrates that it is possible to synthesize an extracted pole filter showing TZs on both sides of the passband but implementing all NRNs of the same reactive nature, overcoming the limitations
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A Compact Low-Pass Filter Using Dielectric-Filled Capacitor on SISL Platform IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-12-04 Yongqiang Wang; Ming Yu; Kaixue Ma
This letter proposes a compact low-pass filter (LPF) using dielectric filled capacitor based on the substrate integrated suspended line (SISL) platform. A dielectric filled capacitor with high capacitance density is presented for the first time. Using this type of capacitor, a three-order lumped element LPF with a cutoff frequency of 120 MHz is designed, fabricated, and tested. The measured results
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Common-Mode Noise Absorption Circuit Using Double-Sided Parallel-Strip Line IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-12-08 Yu Zhu; Kaijun Song; Maoyu Fan; Song Guo; Yedi Zhou; Yong Fan
This letter presents a common-mode noise absorption (CMNA) circuit using the double-sided parallel-strip line (DSPSL). The circuit behaves as a pair of conventional transmission lines (TLs) under differential-mode (DM) excitation. The common-mode (CM) noise is suppressed and absorbed by the surface-mounted resistors between the two TLs. Based on analytical design equations, the values of the surface-mounted
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An Upgraded Dual-Band Digital Predistorter Model for Power Amplifiers Linearization IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-12-07 Abraham Pérez-Hernández; Juan A. Becerra; María José Madero-Ayora; Carlos Crespo-Cadenas
Digital predistortion (DPD) based on Volterra models is commonly employed to counteract the nonlinear distortion of power amplifiers. However, when concurrent dual-band signals are transmitted, 2-D DPD models are required. In this work, upgrading of a standard dual-band model is proposed and justified using multinomial theorem. The linearization performance of the current proposal has been compared
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A Small-Signal GFET Equivalent Circuit Considering an Explicit Contribution of Contact Resistances IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-18 Anibal Pacheco-Sanchez; Javier N. Ramos-Silva; Eloy Ramírez-García; David Jiménez
A small-signal equivalent circuit for graphene field-effect transistors (GFETs) is proposed considering the explicit contribution of effects at the metal–graphene interfaces by means of contact resistances. A methodology to separate the contact resistances from intrinsic parameters, obtained by a deembedding process, and extrinsic parameters of the circuit is considered. The experimental high-frequency
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Mesh-Selecting for Computational Efficient PA Behavioral Modeling and DPD Linearization IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-16 Teng Wang; Pere L. Gilabert
This letter proposes a mesh-selecting (MeS) method for complex-valued signals oriented at significantly reducing the training data required to extract the parameters of mathematical models for characterizing the nonlinear behavior of power amplifiers or digital predistortion linearizers. Experimental results will show the advantages of the proposed MeS method when properly combined with dimensionality
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1.2–2.8-GHz 32.4-dBm Digital Power Amplifier With Balance-Compensated Matching Network IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-16 Tianyi Wang; Huizhen Jenny Qian; Bingzheng Yang; Xun Luo
In this letter, a wideband watt-level digital power amplifier (DPA) with a balance-compensated matching network is proposed for polar transmitters. The balance response of the differential to the single-ended transformer is enhanced by a series-loaded compensation capacitor, which leads to the improvement of the DPA efficiency. To verify the mechanisms, a prototype DPA is fabricated in conventional
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Multioctave Power Amplifier Design Using 9:1 Planar Impedance Transformer IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-10 Hossein Asilian Bidgoli; Meghdad Khodaei; Majid Tayarani
In this letter, at the first step, design of a new broadband planar 9:1 transmission line impedance transformer is investigated and several parameters of this transformer, such as characteristic impedances of the lines, their length, and ground plane distance effects, are analyzed from a new point of view. Then, a multioctave power amplifier (PA) is implemented using the introduced transformer as input
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High-Power Ka/Ku Dual-Wideband GaN Power Amplifier With High Input Isolation and Transformer-Combined Load Design IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-10 Hongqi Tao; Jiawen Wang; Yi Wang; Dongdong Ma; Hanzhang Cao; Wen Wu; Tongde Huang
A high-power dual-wideband GaN power amplifier (PA), which features a filter-based input diplexer and a transformer-combined load, has been proposed in this study. The diplexer realized by low-/high-pass filters presents a high dual-band isolation (>15 dB) and can arbitrarily select the location of the two widely spaced bands. Instead of using a diplexer in the output matching network (OMN), a transformer-combined
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A Wideband SiGe Power Amplifier Using Modified Triple Stacked-HBT Cell IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-12-08 Nguyen L. K. Nguyen; Bao-Toan Nguyen; Toshi Omori; Duy P. Nguyen; Ray Moroney; Stefano D’Agostino; Wayne Kennan; Anh-Vu Pham
This letter presents a linear wideband differential optical driver amplifier in a 90-nm silicon germanium (SiGe) bipolar-complementary-metal-oxide-semiconductor (BiCMOS) process. The amplifier utilizes a modified triple-stacked heterojunction bipolar transistor (HBT) topology with emitter degeneration to achieve high output voltage swing and high linearity. The amplifier achieves 13.2-dB voltage gain
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A Broadband 110–170-GHz Stagger-Tuned Power Amplifier With 13.5-dBm Psat in 130-nm SiGe IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-19 Alper Karakuzulu; Mohamed Hussein Eissa; Dietmar Kissinger; Andrea Malignaggi
This letter presents a fully integrated three-stage single-ended $D$ -band power amplifier (PA) designed in 0.13- $\mu \text{m}$ silicon–germanium (SiGe) BiCMOS technology. Several bandwidth extension techniques and matching networks are mutually exploited to maximize Bandwidth (BW) performance while assuring unconditional stability. Its measured 3-dB bandwidth covers the entire $D$ -band (110–170
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Ultralow-Noise Figure and High Gain Ku-Band Bulk CMOS Low-Noise Amplifier With Large-Size Transistor IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-19 Han-Woong Choi; Sunkyu Choi; Choul-Young Kim
This letter presents a fully integrated Ku -band low-noise amplifier (LNA) with a large-size transistor using 65-nm bulk complementary metal–oxide–semiconductor (CMOS) technology. To achieve an ultralow-noise figure, an optimization methodology balancing the ON-chip gate inductor and the parasitic capacitance of the large-size device is introduced. Using a voltage supply of 1 V, the proposed LNA has
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A 28–40-GHz Digital Step Attenuator With Low Amplitude and Phase Variations IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-12-08 Keping Wang; Tongxuan Zhou; Hao Zhang; Lei Qiu
This letter presents a 28–40-GHz 5-bit digital step attenuator (DSA) in a 0.13- $\mu \text{m}$ SiGe BiCMOS technology. The DSA achieves low amplitude and phase variations by using the following techniques: 1) combination of distributed, T-type, and modified $\Pi $ -type attenuators can ensure a low amplitude variation while maintaining a compact size; 2) interstage matching is designed to relax the
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A 12-Bit 0.5–2.4-GHz 0.65°-Peak-INL Parasitic-Insensitive Digital-to-Phase Converter IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-16 Haoyun Jiang; Zhengkun Shen; Dong Wang; Xiucheng Hao; Zexue Liu; Yi Tan; Junhua Liu; Huailin Liao
A 12-bit 0.5–2.4-GHz parasitic-insensitive digital-to-phase converter (DPC) with high linearity is presented in this letter. A modified parasitic-insensitive charge-based (PICB) phase interpolator (PI) is proposed to avoid linearity degradation caused by parasitic effect. A novel PI cell with separated clock selecting logic is implemented to solve charge leakage and overcharging problem. The DPC is
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A 5-GHz Adjustable Loop Bandwidth Frequency Synthesizer With an On-Chip Loop Filter Array IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-03 Yue-Fang Kuo; Ming-Hsien Yang; Yi-Chien Chiang
The design of an adjustable loop bandwidth (LBW) frequency synthesizer with an on-chip loop filter (LF) array is presented. The LF array based on the simple capacitor multiplier topology is proposed to support LBW switching between 500 kHz and 1 MHz while saving 82.9% chip size compared to the traditional LF array. The maximum capacitance of 108 pF is realized by using the capacitor multiplier with
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Study and Design of a 2.45-GHz Rectifier Achieving 91% Efficiency at 5-W Input Power IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-12-01 Ce Wang; Bo Yang; Naoki Shinohara
To achieve a high-efficiency microwave wireless power transfer system, a high conversion efficiency rectifier is necessary. Brown (1974) designed rectifiers with approximately 3-W input power achieved 90% conversion efficiency for 2.45 GHz, and it maintains the record for maximum conversion efficiency. In this study, to design a high-efficiency and high-power rectifier, we designed a larger semiconductor
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Electrooptic Measurements to Assess the Quality of Calibration Kit Design IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-12-03 Haris Votsi; Jonas Urbonas; Stavros Iezekiel; Peter H. Aaen
Electromagnetic coupling between planar devices can degrade microwave calibrations and, consequently, the accuracy of a measurement. This letter describes measurement-based methods that can identify, assess, and visualize the electric field coupled between the adjacent planar calibration structures. The coupling within a printed circuit board (PCB)-based and an on-wafer impedance standard substrate
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Broadband and Fast Carrier Cancellation for Backscattered RFID Communications IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-12-08 Haoqiu Xiong; Chuankui Shen; Terry Tao Ye
Ultrahigh frequency radio frequency identification (UHF RFID) uses backscattered electromagnetic (EM) modulation techniques to communicate between readers and tags. The suppression of the carrier signal leaked from the transmission channel to the receiving channel is the key factor that determines the reader’s sensitivity. In this letter, a broadband, fast carrier cancellation technique is proposed
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Group Digital Predistortion With Step Uniformization for Hybrid Beamforming Transmitters IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-12-03 Caoyu Li; Songbai He; Fei You; Peng Hao; Jun Peng
This letter proposes a group digital predistorter with step uniformization (SU-GDPD) for massive multi-input multi-output (MIMO) transmitters with hybrid beamforming architecture. Analog predistorters (APDs) are employed to iteratively adjust the nonlinear character of the power amplifiers (PAs) that are sharing one radio frequency (RF) chain. The shared digital predistortion (DPD) parameter and the
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A C-Band FMCW SAR Transmitter Based on Synthetic Bandwidth Technique IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-16 Hanyang Su; Siegfred Daquioag Balon; Keyou Cheong; Chun-Huat Heng
A $C$ -band frequency-modulated continuous wave (FMCW) transmitter based on synthetic bandwidth technique for synthetic aperture radar (SAR) imaging is presented. A 500-MHz narrowband chirp signal is up-converted to two adjacent carriers to obtain 1-GHz chirp at the $C$ -band. The adjacent carriers are obtained through fast switching subharmonic injection locking oscillator (SHILO) technique with 14-ns
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TechRxiv: Share Your Preprint Research withthe World! IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-12-30
Advertisement: TechRxiv is a free preprint server for unpublished research in electrical engineering, computer science, and related technology. TechRxiv provides researchers the opportunity to share early results of their work ahead of formal peer review and publication. Benefits: Rapidly disseminate your research findings; Gather feedback from fellow researchers; Find potential collaborators in the
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IEEE Microwave and Wireless Components Letters information for authors IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-12-30
Provides instructions and guidelines to prospective authors who wish to submit manuscripts.
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On the Optimum Number of Coefficients of Sparse Digital Predistorters: A Bayesian Approach IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-13 Juan A. Becerra; María José Madero-Ayora; Rafael G. Noguer; Carlos Crespo-Cadenas
This work presents insights on the application of the Bayesian information criterion (BIC) to fix the optimum number of coefficients in the Volterra series applied to the modeling and linearization of power amplifiers (PAs). The BIC is transformed from a rule to be applied after selection techniques to a stopping criterion, which enables the halting of the algorithm when a condition is reached. This
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Design of a Compact SISL BPF With SEMCP for 5G Sub-6 GHz Bands IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-26 Wenwen Zhang; Kaixue Ma; Hao Zhang; Haipeng Fu
In this letter, a cross-coupled dual-bandpass filter (BPF) with separate electric and magnetic coupling paths (SEMCPs) for 5G sub-6 GHz applications is proposed. Source-to-load couplings are also introduced in this structure for the flexibility of heterogeneous feed lines. Five controllable transmission zeros (TZs) in total are produced in the dual-band filter. The filter achieves good overall performance
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Accurate Modeling of Stubs Used as Resonant Coupling Elements in SIW Filters IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-02 Giuseppe Macchiarella; G. G. Gentili; Nicolò Delmonte; Lorenzo Silvestri; Cristiano Tomassoni; Luca Perregrini; Maurizio Bozzi
This letter presents an accurate model for the stubs used as frequency-dependent coupling elements in substrate integrated waveguide (SIW) filters, with the aim to generate transmission zeros (TZs) in the frequency response. The model is based on the actual modes excited in the stub, differently from the single-mode (equivalent circuit) representation used in previous works. A procedure to determine
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Compact Single- and Dual-Band Filters on Hexa-Modes Half-Mode Substrate Integrated Waveguide Resonator With Loaded H-Shaped Slot IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-29 Bao-Guang Liu; Yun-Peng Lyu; Lei Zhu; Chong-Hu Cheng
In this letter, new compact third-order single- and dual-band filters on a hexa-modes half-mode substrate integrated waveguide (HMSIW) resonator with loaded H-shaped slot are presented. For the single-band design, the TE 101 mode, TE 201 mode, and the lower part of H-shaped slot mode are utilized to realize the third-order filtering response. By properly allocating the high-order modes, wide-stopband
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A Novel Frequency Tunable RF Comb Filter IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-26 Maryam Salim; Seyedmohammad Mousavi; Line Van Nieuwstadt; Roger De Roo; Kamal Sarabandi
This letter presents a new filter to suppress radio frequency interference (RFI) in microwave remote sensing instruments, particularly a wideband autocorrelation radiometer (WiBAR). RFI increases the noise floor and results in a decreased signal-to-noise ratio (SNR) of the WiBAR delay peak. The proposed filter operates like a Fabry–Perot interferometer (FPI) in optics and has the frequency response
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Compact Ultrawideband Grounded Coplanar Waveguide to Substrate Integrated Waveguide Tapered V-Slot Transition IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-28 Diego Lorente; Markus Limbach; Hector Esteban; Vicente Boria
In this work, a new ultrawideband grounded coplanar waveguide (GCPW) to substrate integrated waveguide transition is presented. The proposed design improves the performance of the triangular tapered slot transition, by providing a return loss level better than 28 dB in the $X$ -band frequency range (with enhancements of up to 29 dB at higher frequencies in such a band) and a flatter response for the
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RF Characterization of Diamond Schottky p-i-n Diodes for Receiver Protector Applications IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-28 Harshad Surdi; Mohammad Faizan Ahmad; Franz Koeck; Robert J. Nemanich; Stephen Goodnick; Trevor J. Thornton
Diamond Schottky p-i-n diodes have been grown by plasma-enhanced chemical vapor deposition (PECVD) and incorporated as a shunt element within coplanar striplines for RF characterization. The p-i-n diodes have a thin, lightly doped n-type layer that is fully depleted by the top metal contact, and they operate as high-speed Schottky rectifiers. Measurements from dc to 25 GHz confirm that the diodes can
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Measurement-Based FET Analytical Modeling Using the Nonlinear Function Sampling Approach IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-15 Teresa M. Martín-Guerrero; Alberto Santarelli; Gian Piero Gibiino; Pier Andrea Traverso; Carlos Camacho-Peñalosa; Fabio Filicori
A novel and fast method for the measurement-based identification of an analytical field-effect transistor (FET) compact model from large-signal waveforms is presented. Based on a two-tone two-port experiment, a recently published nonlinear function sampling (NFS) operator providing the samples of the FET state functions in the voltage domain is here exploited, for the first time, to extract an equivalent-circuit
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54% PAE, 70-W X-Band GaN MMIC Power Amplifier With Individual Source via Structure IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-28 Jun Kamioka; Yukinobu Tarui; Yoshitaka Kamo; Shintaro Shinjo
This letter reports on the development of an ${X}$ -band GaN monolithic microwave integrated circuit (MMIC) high-power amplifier (HPA) which achieves a power-added efficiency (PAE) of 54% and an output power of 70 W. Mitsubishi’s GaN field-effect transistors (FETs) with a gate length of 0.15 $\mu \text{m}$ and individual source via (ISV) structure are utilized. The developed GaN MMIC HPA demonstrates
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An 18–56-GHz Wideband GaN Low-Noise Amplifier With 2.2–4.4-dB Noise Figure IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-21 Xiaodong Tong; Liang Zhang; Penghui Zheng; Shiyong Zhang; Jianxing Xu; Rong Wang
An 18–56-GHz gallium nitride (GaN) low-noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) is presented in this letter. This LNA is fabricated with commercial 0.1- $\mu \text{m}$ gate-length GaN-on-silicon (GaN/Si) process. The gain is 16–21.5 dB and the $\vert {S} 11\vert $ and $\vert {S} 22\vert $ are below −5 dB across the band. The noise figure (NF) is 2.2–4.4 dB and the output
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An Integrated 65-nm CMOS SOI Ka-Band Asymmetrical Single-Pole Double-Throw Switch Based on Hybrid Couplers IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-15 Thibaut Despoisse; Nathalie Deltimple; Anthony Ghiotto; Magali De Matos; Jeremie Forest; Pierre Busson
This letter presents the design of an asymmetrical Ka -band single-pole double-throw (SPDT) switch, based on two integrated hybrid couplers. The principle of operation of this switch and its two asymmetrical receiving (Rx) and transmitting (Tx) states are detailed. The circuit theory is supported by the implementation of a demonstrator using an advanced integrated technology: 65-nm substrate on insulator
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A 440–540-GHz Subharmonic Mixer in 130-nm SiGe BiCMOS IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-26 Alper Güner; Thomas Mausolf; Jan Wessel; Dietmar Kissinger; Klaus Schmalz
A subharmonic mixer (SHM), which is measured within the RF range 450–500 GHz, is presented. The SHM uses a single-balanced topology with optimized parameters for gas spectroscopy at 440–540 GHz. The differential RF input of the mixer core is transformed to a single-ended input using a Marchand balun. The mixer is designed using a 130-nm SiGe BiCMOS technology. The mixer shows a measured conversion
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A 3.1-dBm E-Band Truly Balanced Frequency Quadrupler in 22-nm FDSOI CMOS IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-13 Soenke Vehring; Yaoshun Ding; Philipp Scholz; Friedel Gerfers
This letter presents a truly balanced $E$ -band frequency quadrupler in 22 nm fully depleted silicon-on-insulator CMOS. The quadrupler comprises a chain of two truly balanced frequency push–push doubler (PPD). An innovative layout floorplan shrinks the silicon area utilization of the truly balanced PPDs by 30% and improves the state-of-the-art. Thanks to the balanced topology, the quadrupler achieves
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A D-Band Dual-Mode Dynamic Frequency Divider in 130-nm SiGe Technology IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-30 Sining An; Zhongxia Simon He; Franz Dielacher; Herbert Zirath
In this work, a dual-mode (divide-by-2 and divide-by-3) dynamic frequency divider is presented. A tunable delay gated ring oscillator (TDGRO) topology is proposed for dual-mode operation and bandwidth extension. It uses a 130-nm gate length SiGe BiCMOS technology with the $f_{t}$ and $f_{\mathrm {max}}$ of 250 and 370 GHz, respectively. Verification shows that it works at $W$ -band from 70 to 114 GHz
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A Compact High-Efficiency Rectifier With a Simple Harmonic Suppression Structure IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-26 Zhongqi He; Hang Lin; Huacheng Zhu; Changjun Liu
In this letter, a compact high-efficiency radio frequency (RF) rectifier based on a series harmonic suppression structure is proposed for wireless power transmission (WPT). The proposed structure removes the cascading bandpass between the RF source and the diode, and the dc-pass filter between the diode and the dc load, simultaneously. The harmonic suppression structure consists only of a short-ended
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General Solution of a Rectifier Using an Inductive Matching Network IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-19 Muh-Dey Wei; Chun-Yu Fan; Florian Dietrich; Renato Negra
A rectifier with an inductive matching network can reach good efficiency within a very compact size, and hence, became popular recently. In this letter, a general design solution for the inductive matching network is provided. A criterion for using the inductive matching technique is derived to evaluate the suitability of a specific diode for this operation mode. According to the analysis, adding an
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Reconfigurable Multistage RF Rectifier Topology for 900 MHz ISM Energy-Harvesting Applications IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-16 Mohamed M. Mansour; Shuya Yamamoto; Haruichi Kanaya
Energy harvesting (EH) offers several benefits for integrating compact low-power wireless nodes into emerging microscale applications, such as the Internet of Things (IoT), wearable and implantable medical diagnosis, and so on. In this study, an optimum approach is developed to design an adaptive high-performance rectifier for EH wireless charging. The rectifier architecture is based on a simple voltage
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A Broadband High-Efficiency RF Rectifier for Ambient RF Energy Harvesting IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-16 Wenbo Liu; Kama Huang; Tao Wang; Zhuoyue Zhang; Jing Hou
In this letter, a compact broadband high-efficiency RF rectifier is presented for ambient RF energy harvesting (EH). A novel impedance matching network with an additional quarter-wavelength short-circuited stub was designed to achieve broadband impedance matching. After the branch was added, the parallel resonance point on track $S_{11}$ did not move, and the remaining points were compressed. The measurement
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Multiband Ambient RF Energy Harvesting for Autonomous IoT Devices IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-22 Hong Son Vu; Ngan Nguyen; Nam Ha-Van; Chulhun Seo; Minh Thuy Le
This letter presents a novel multiband rectenna for the ambient wireless energy harvesting of an autonomous internet of thing (IoT) sensor. A bow-tie antenna with slits is proposed to obtain four frequency bands at 840 MHz, 1.86, 2.1, and 2.45 GHz, respectively. Furthermore, a multiband rectifying circuit combined of four single ring-loop rectifiers is designed with high conversion efficiency. Finally
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Data-Dense Chipless RFID Multisensor for Aviculture Industry IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-29 Nimra Javed; Muhammad Awais Azam; Ibrahim Qazi; Yasar Amin; Hannu Tenhunen
This letter presents a 22-bit data-dense chipless radio frequency identification (RFID) tag with a multiparameter sensing feature. The tag has a radius of 7.4 mm, and it is excited with dual-polarized incident plane waves. Kapton® HN-based tag is loaded with copper as a radiating material and multiwall carbon nanotubes (MWCNTs) as a CO 2 sensor. The slots are finely etched inside the metal sheet having
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A Novel Class-C Rectifier With High Efficiency for Wireless Power Transmission IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-26 Zhongqi He; Hang Lin; Changjun Liu
In this letter, a compact Class-C rectifier with high efficiency based on a novel structure was proposed for wireless power transmission (WPT). This structure is connected to the rectifying diode in parallel. It presents infinite impedance at the output port at the fundamental frequency for impedance matching and zero impedance at the high harmonic frequencies. An open-end 12th wavelength microstrip
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An Ultrahigh Sensitivity Microwave Sensor for Microfluidic Applications IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-15 Li-Chao Fan; Wen-Sheng Zhao; Da-Wei Wang; Qi Liu; Shichang Chen; Gaofeng Wang
This work shows an ultrahigh sensitivity microwave sensor for microfluidic applications. The proposed sensor is made of a microstrip line loaded with a complementary split-ring resonator (CSRR). The meander slot is adopted in the CSRR to achieve high field confinement and is therefore covered with a polydimethylsiloxane (PDMS) microfluidic channel to enable strong interaction between the field and
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A Compact, Wide Bandwidth Real-Time RF Exposure Setup Based on Microelectrode Array IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-30 Xuelong Zhao; Qi Liu; Guofu Dong; Yunfei Sun; Hongmei Zhou; Changzhen Wang
A real-time RF exposure setup for studying the mechanism of RF biological effects based on microelectrode array (MEA) is proposed in this letter. The reflection simulation and measurement of the exposure setup show that the exposure setup has a wide working bandwidth in the frequency range of dc-3.0 GHz. The specific adsorption rate (SAR) measurement and simulation results at some frequencies show
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Frequency Comb MIMO OFDM Radar With Nonequidistant Subcarrier Interleaving IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-26 Benjamin Nuss; Lucas Giroto de Oliveira; Thomas Zwick
To overcome the necessity of high sampling rates for common orthogonal frequency-division multiplexing (OFDM)-based radar waveforms with a good range resolution, a scheme called frequency comb OFDM radar has recently been proposed. It keeps the sampling rates at the transmitter and receiver constant while simultaneously increasing the signal bandwidth in the radar channel. This letter describes the
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A Near-Range Radar Target Simulator for Automotive Radar Generating Targets of Vulnerable Road Users IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-26 Johannes Iberle; Patrick Rippl; Thomas Walter
In this letter, a radar target simulator (RTS) for the generation of targets for frequency modulated continuous wave (FMCW) chirp sequence radar in the close range of a vehicles surroundings is presented. Key interest is the reproduction of micro-Doppler signatures of vulnerable road users, for example, pedestrians or cyclists. The received $E$ -band radar signal is first converted from the RF band
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Table of contents IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-06
Presents the table of contents for this issue of the publication.
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IEEE Microwave and Wireless Components Letters publication information IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-11-06
Presents a listing of the editorial board, board of governors, current staff, committee members, and/or society editors for this issue of the publication.
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Analytical Synthesis of Fully Canonical Cascaded-Doublet Prototype Filters IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-01 Steven Caicedo Mejillones; Matteo Oldoni; Stefano Moscato; Giuseppe Macchiarella
This letter presents an analytical procedure for the synthesis of a low-pass prototype filter constituted by the cascade of doublet blocks coupled by inverters or shunt reactances. The considered doublet is a second-order resonating structure composed of two resonant and two nonresonant nodes which allow the placement of two finite transmission zeros (TZs) in the frequency response. The considered
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Determining Incidence and Polarization of Electromagnetic Field for Maximal/Minimal Coupling to Transmission Line System IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-09-16 Tao Liang; Yan-Zhao Xie
In this letter, we consider the scenario that a linearly polarized electromagnetic plane wave excites a transmission line (TL). By tailoring the reciprocity theorem for modeling the field-coupling problem, we prove that the maximal/minimal coupling scenarios can be determined from the radiation pattern data. Particularly, the incidence and polarization angles of the field that maximize/minimize the
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Design of a Suspended Stripline Dual-Band Band-Stop Filter Loaded With Short-Ended Waveguide Stubs Embedded in the Metal Housing IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-09-22 Ze Yu; Liqiang Xu; Changjun Liu
This letter presents a novel dual-band band-stop filter (DBBSF) based on suspended stripline (SSL) with short-ended waveguide stubs on its metal housing. A short-ended waveguide stub embedded transversally in the metal housing of the SSL has been shown to introduce independent transmission zeros. It is mostly suitable for high harmonic depression. This letter describes a band-stop filter with four
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High Isolation Substrate Integrated Waveguide Diplexer With Flexible Transmission Zeros IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-10-01 Fei Cheng; Chao Gu; Bing Zhang; Yang Yang; Kama Huang
This letter presents a high isolation substrate integrated waveguide (SIW) diplexer using dual-mode resonators. Each dual-mode SIW resonator can generate one transmission pole (TP) and one transmission zero (TZ) for the channel filter. The frequencies of the TZs can be easily controlled by the perturbation vias. One channel filter’s two TZs’ frequencies are designed to cover the other channel filter’s
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A Tunable Vector-Sum Filtering Power Divider With Continuously Tuned Frequency and Arbitrary Output Phase Difference IEEE Microw. Wirel. Compon. Lett. (IF 2.31) Pub Date : 2020-09-17 Xu Zhu; Tao Yang; Pei-Ling Chi; Ruimin Xu
A novel tunable vector-sum filtering power divider (FPD) with arbitrary output phase difference is proposed. It is constructed by a tunable FPD [which has reconfigurable in-/out-of-phase output and arbitrary power division ratios (PDRs)] on the left and a wideband branch-line coupler (BLC) on the right. The output wave from the left FPD forms two orthogonal vectors at each output port of the BLC. The