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Estimating the Number of Defects in a Single Breakdown Spot of a Gate Dielectric IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-14 A. Ranjan, A. Padovani, B. Dianat, N. Raghavan, K.L. Pey, S.J. O’Shea
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Ultrahigh-Sensitivity Coupled Cantilever and Dual-cavity Piezoelectric Micromachined Ultrasonic Transducers IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-14 Yi Gong, Menglun Zhang, Miaojie Liu, Shaobo Gong, Quanning Li, Xuejiao Chen, Wei Pang
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High-responsivity van der Waals Schottky photodiodes based on maskless etched wafer-scale silicon nanoholes IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-14 Zhaohui Yang, Gaobin Xu, Shirong Chen, Yongqiang Yu, Baichuan Sun, Cunhe Guan, Jianguo Feng, Yuanming Ma, Xing Chen
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Experimental Demonstration of a 10-kW-Level G-band Gyro-TWT IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-14 Wei Jiang, Chaoxuan Lu, Jianwei Zhou, Boxin Dai, Guo Liu, Jianxun Wang, Yelei Yao, Binyang Han, Wei Zhou, Yong Luo
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Understanding the degeneration of neurons from NbOx-based threshold device by an unhappy environment IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-14 Ao Chen, Zhennan Lin, Guokun Ma, Rui Xiong, Qiming Liu, Hao Wang
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Virtual-Body p-GaN Gate HEMT with Enhanced Ruggedness Against Hot-Electron-Induced Degradation IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-14 Junjie Yang, Maojun Wang, Jingjing Yu, Yanlin Wu, Jiawei Cui, Teng Li, Han Yang, Jinyan Wang, Xiaosen Liu, Xuelin Yang, Bo Shen, Jin Wei
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Experimental Validation of Robust Hybrid Edge Termination Structures in Vertical GaN p-i-n Diodes with Avalanche Capability IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-13 James Spencer Lundh, Alan G. Jacobs, Prakash Pandey, Tolen Nelson, Daniel G. Georgiev, Andrew D. Koehler, Raghav Khanna, Marko J. Tadjer, Karl D. Hobart, Travis J. Anderson
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Bias Potential Mediated NO2 Gas Sensor with NiCo2O4 Hollow Micro-spheres IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-12 Julaiba T. Mazumder, Aman Nanda, Jyoti R. Mandal, Anshul Yadav, Ravindra K. Jha
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Regulation NO and NH3 Sensing of Organic Transistors via Synergy of Bias-Stress Effect and Photoexcitation IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-11 Guodong Zhao, Yanhong Tong, Qingxin Tang, Yichun Liu
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Bragg-Spaced Quantum-Well Nanorod In-Plane Lasers on Silicon IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-11 Douglas R. Dykaar, Hrilina Ghosh, Songrui Zhao, Siva Sivoththaman
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First Demonstration of Optically-Controlled Vertical GaN finFET for Power Applications IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-11 Jung-Han Hsia, Joshua Andrew Perozek, Tomáas Palacios
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High-Performance Al0.1Ga0.9N p-i-n Ultraviolet Avalanche Photodiodes With Ultra-Shallow Bevel Edge Terminations IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-11 Haifan You, Haiping Wang, Weike Luo, YiWang Wang, Xinghua Liu, Hai Lu, Rong Zhang, Youdou Zheng, Dunjun Chen
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Hole Virtual Gate Model Explaining Surface-Related Dynamic R ON in p-GaN Power HEMTs IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-11 Nicolò Zagni, Giovanni Verzellesi, Alessandro Bertacchini, Mattia Borgarino, Ferdinando Iucolano, Alessandro Chini
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Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-03-05 Yibo Liu, Guobin Wang, Feng Feng, Zichun Li, Ke Xu, Hoi Sing Kwok, Zhaojun Liu
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Demonstration of a PECVD SiO x -Based RRAM Dendritic Device IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 S. Roy, E. Bhattacharya, B. Chakrabarti
Synaptic plasticity has been traditionally credited for learning in the brain. The prevalent view on learning through synapses forms the backbone behind all the significant developments in the area of artificial neural networks (ANN). However, more recent studies in Neuroscience reveal that dendritic junctions play a crucial role in the dynamics of learning, leading to increased efficiency and faster
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IEEE Electron Device Letters Information for Authors IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27
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A TFT-Based Active Pixel Sensor With Dynamic Range > 100dB, Gain > 10 and Broad Spectral Response From Near-UV to Near-IR, Enabling In-Display Sensor Applications IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 Weisheng Wu, Yitong Xu, Xianming Li, Xinghui Liu, Fei Liu, Kai Wang
In-display optical and image sensors add functions and values to display panels to form smarter and more interactive displays. A randomly-accessible active pixel sensor (APS) based on a double-gate amorphous silicon TFT is proposed and studied in this work. The proposed APS has low off current ( $< 10^{-{12}}\text{A}$ ), wide dynamic range of >100dB, and high gain of >10 from 300nm to 1100nm wavelengths
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Suppression of Gate-Induced-Drain-Leakage Utilizing Local Polarization in Ferroelectric-Gate Field-Effect Transistors for DRAM Applications IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 Been Kwak, Kitae Lee, Sihyun Kim, Daewoong Kwon
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Single-crystalline Bulk Acoustic Wave Resonators Fabricated with AlN Film Grown by a Combination of PLD and MOCVD Methods IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 Peidong Ouyang, Xinyan Yi, Guoqiang Li
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Resolving Issues of VTH and ILeak for P-Type LTPS TFT-Based Emission Gate Driver by Reducing Falling Time and Increasing Stabilizing Period for Smartwatch Displays IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 Chih-Lung Lin, Yi-Chien Chen, Po-Cheng Lai, Jui-Hung Chang, Ting-En Wei, Cheng-Yi Huang
This work proposes an emission (EM) gate driver that is based on p-type low-temperature poly-crystalline silicon thin-film transistors (LTPS TFTs) with the implementation of lightly doped drain (LDD) to achieve flat off current. The long-tail phenomenon associated with the EM signal that is caused by a high threshold voltage (VTH) and (VTH variation in LTPS TFTs is improved by enhancing the driving
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First Demonstration of an N-Polar InAlGaN/GaN HEMT IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 Robert Hamwey, Nirupam Hatui, Emre Akso, Feng Wu, Christopher Clymore, Stacia Keller, James S. Speck, Umesh K. Mishra
In this letter, we report the first N-polar InAlGaN quaternary back barrier high-electron-mobility transistor (HEMT). The epitaxial device heterostructure was grown by metal organic chemical vapor deposition (MOCVD). Hall measurements of the heterostructure showed a two-dimensional electron gas (2DEG) density of $2.85\times 10^{{13}}$ cm $^{-{2}}$ and a mobility of 1048 cm $^{{2}}\,\,\text{s}^{-{1}}\
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The 10th IEEE World Forum on the Internet of Things (IoT) IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27
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IEEE Electron Device Letters Publication Information IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27
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Enhancing Carrier Transport and Injection of Ga2O3 Deep-Ultraviolet Schottky Photodiode by Introducing Impurity Energy Level IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 Li-Li Yang, Zeng Liu, Shan Li, Mao-Lin Zhang, Zhao-Ying Xi, Qiang Xu, Si-Han Yan, Yu-Feng Guo, Wei-Hua Tang
In this letter, a Ti/Sn-Ga2O3/Ni Schottky photodiode device was achieved by a rarely-reported PECVD technology. Benefitting from the introduction of Sn impurity energy level, which provides extra paths for carriers’ generation and helps create a stronger built-in electric field to facilitate carriers’ separation, the carrier transport and injection efficiency of device are collaboratively enhanced
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The RGATE: An 8-in-1 Polymorphic Logic Gate Built From Reconfigurable Field Effect Transistors IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 Giulio Galderisi, Thomas Mikolajick, Jens Trommer
We present the hardware implementation of a reconfigurable universal logic gate, that we call RGATE, able to deliver up to eight different logic functionalities and based on a symmetric four-transistors cell. The polymorphic logic gate is realized with three-gated Reconfigurable Field Effect Transistors. Fabrication and electrical characteristics of the elements are discussed. To validate the presented
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Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27
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Neurons With Captive Synaptic Devices for Temperature Robust Spiking Neural Networks IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 Kyungchul Park, Sungjoon Kim, Myung-Hyun Baek, Bosung Jeon, Yeon-Woo Kim, Woo Young Choi
Synaptic devices store the synaptic weight in spiking neural networks (SNNs). However, because synaptic devices are based on memory cells, their synaptic weights are vulnerable to temperature variations, which significantly degrade network accuracy. To implement temperature-robust asynchronous SNNs, neurons with captive synaptic devices (CSD neurons) are proposed in this study. Captive synaptic devices
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AlScN/n-GaN Ferroelectric Memristors With Controllable On/Off Ratios and Reversible Bipolar Resistive Switching Characteristics IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 Mingrui Liu, Shunpeng Lu, Yuping Jia, Hang Zang, Ke Jiang, Xiaojuan Sun, Dabing Li
AlScN-based memristors show high potential of non-volatile storage and neuromorphic computing. Here, we report an AlScN/n-GaN heterostructure memristor with a large ON/OFF ratio over $10^{{5}}$ attributed to the coexistence of heterointerface energy band modulation and trap-assisted conduction mechanisms. Unlike typical ferroelectric memristors, the device presents obvious reproducible bipolar resistive
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Fast Response Solar-Blind Ultraviolet Photodetector Based on the β-Ga2O3/p-Si Heterojunction IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27 Haoyan Dong, Shufang Ma, Yanping Niu, Zhi Yang, Shuai Zhang, Yu Hu, Xiaodong Hao, Bin Han, Guoqiang Li, Hailiang Dong, Bingshe Xu
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IEEE Transactions on Electron Devices Table of Contents IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-27
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Modified Low-Voltage Triggered Silicon-Controlled Rectifier for ESD Protection IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-26 Zhaonian Yang, Changlin Qi, Dongbing Fu, Shi Pu, Xin Wang, Yuan Yang
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Unveiling the Vulnerability of Oxide-Breakdown-Based PUF IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-26 P. Saraza-Canflanca, F. Fodor, J. Diaz-Fortuny, B. Gierlichs, R. Degraeve, B. Kaczer, I. Verbauwhede, E. Bury
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Skin-Patchable Electromagnetic Biosensors for Noninvasive and Wireless Glucose Monitoring IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-26 Qian Wang, Guang Yao, Wenhao Lou, Fan Li, Tianyao Zhang, Sihong Chen, Maowen Xie, Mengyao Yuan, Kangning Zhao, Taisong Pan, Min Gao, Yuan Lin
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Selective Data Writing in IrMn-Based Perpendicular Magnetic Tunnel Junction Array Through Voltage-Gated Spin-Orbit Torque IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-26 Weixiang Li, Zhaochun Liu, Shouzhong Peng, Jiaqi Lu, Jiahao Liu, Xinyuan Li, Shiyang Lu, YoshiChika Otani, Weisheng Zhao
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Large Polarization of Hf0.5Zr0.5Ox Ferroelectric Film on InGaAs with Electric-Field Cycling and Annealing Temperature Engineering IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-23 Yoon-Je Suh, Jaeyong Jeong, Bong Ho Kim, Song-Hyeon Kuk, Seong Kwang Kim, Joon Pyo Kim, Sanghyeon Kim
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High Frequency Mid-infrared Quantum Cascade Laser Integrated with Grounded Coplanar Waveguide Transmission Line IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-22 Xu Gao, Ke Yang, Yixuan Zhu, Kai Guo, Shenqiang Zhai, Ning Zhuo, Yuan Li, Jinchuan Zhang, Lijun Wang, Shuman Liu, Fengqi Liu, Zhipeng Wei, Xiaohua Wang, Junqi Liu
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Significant Reduction of 1/f Noise in Organic Thin-Film Transistors with Self-Assembled Monolayer: Considerations of Density-of-States IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-22 Wonjun Shin, Jisuk Bae, Joon Hyung Park, Jong-Ho Lee, Chang-Hyun Kim, Sung-Tae Lee
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Highly sensitive and stable low humidity sensors based on polymeric ionic liquid and polybenzimidazole composites IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-22 Yaping Song, Zhiyan Ma, Yanyu Cui, Xiaoya Miao, Yunlong Yu, Ke Wu, Hongran Zhao, Sen Liu, Teng Fei, Tong Zhang
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Slow-Wave Substrate Integrated Waveguide with Low Loss and Miniaturized Dimensions Using TGV Technology IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-22 Lingyue Wang, Hongwei Chen, Wenlei Li, Libin Gao, Xingzhou Cai, Yong Li, Jihua Zhang
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Organic Ternary Logic Inverter using Negative Transconductance Pull-Down Switching Transistor IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-22 Somi Kim, Yunchae Jeon, Hong-rae Cho, Chang-Hyun Kim, Hocheon Yoo
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Ultra-High-Isolation Mutual-Embedded Transformer in Organic Substrate for Digital Isolator IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-22 Haiwang Li, Kaibo Lei, Kaiyun Zhu, Yuqian Ma, Wenbing Wang, Tiantong Xu
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Leakage Performance of 4H-SiC CMOS Logic Circuits After Gamma Irradiation IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-22 Long Zhang, Yong Gu, Jie Ma, Xiangyu Hou, Hongyang Wen, Jingjing Hong, Siyang Liu, Ao Liu, Runhua Huang, Song Bai, Weifeng Sun
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Coupled Shear SAW Resonator with High Electromechanical Coupling Coefficient of 34% using X-cut LiNbO3-on-SiC Substrate IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-22 Zhongbin Dai, Hengxiao Cheng, Siqi Xiao, Haiding Sun, Chengjie Zuo
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A Novel 1T-DRAM Fabricated with 22 nm FD-SOI Technology IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-22 H. Xie, W. Zhang, P. Zhou, S. Cristoloveanu, Y Xu, FY Liu, J Wan
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Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf0.5Zr0.5O2 by Optimizing TiNx Interfacial Capping Layer and Its Fatigue Mechanism IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-22 Asim Senapati, Zhao-Feng Lou, Jia-Yang Lee, Yi-Pin Chen, Shih-Yin Huang, Siddheswar Maikap, Min-Hung Lee, Chee-Wee Liu
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Efficiency Improvement of a Klystron-like Relativistic Traveling Wave Oscillator with a Ridge Extractor and Permanent Magnet over the Dual Cavity Extractor IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-21 Dewen Yang, Changhua Chen, Yan Teng, Yanchao Shi, Feng Zhang, Lei Huang, Sen Wang, Xiaoxin Zhu, Ligang Zhang, Xinhong Cui, Weibin Tan, Jiancang Su
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Ultra-Fast True Random Number Generator Based on Ill-Posedness Nucleation of Skyrmion Bags in Ferrimagnets IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-21 Zhizhong Zhang, Kelian Lin, Kun Zhang, Xueqiang Feng, Lei Chen, Youguang Zhang, Arnaud Bournel, Mathias Kläui, Weisheng Zhao, Yue Zhang
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Efficient Perovskite-Based Red Micro Light-Emitting Diodes IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-21 Dongmin Qian, Jinglong Liu, Yu Cao, Yuxiao Cai, Xiangru Tao, Wei Zhu, Nana Wang, Jianpu Wang
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Improving Deposition Density of Solution Processed Carbon Nanotubes by Substrate Treatment for High-Performance Flexible Thin Film Transistors IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-21 Li Xiang, Huaidong Ye, Xingge Yu, Jie Liu, Anlian Pan
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Defect Engineering in Multilayer h-BN Based RRAM by Localized Helium Ion Irradiation IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-21 Yu Kang, Weiming Ma, Xiaolei Wen, Yang Xu, Huan Hu, Yuda Zhao, Bin Yu
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La Doped HZO based 3D-Trench Metal-Ferroelectric-Metal Capacitors with High Endurance (>1012) for FeRAM Applications IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-21 Amey M. Walke, Mihaela I. Popovici, Shamin H. Sharifi, Eyup C. Demir, Harinarayanan Puliyalil, Jasper Bizindavyi, Farrukh Yasin, Sergiu Clima, Andrea Fantini, Attilio Belmonte, Gouri S. Kar, Jan V. Houdt
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A Hyperbolic Micromagnet for Multiple Spin Qubits with Fast Rabi Oscillations and High Addressability IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-20 Che-Hao Chang, Yu-Cheng Li, Yu-Jui Wu, Chen-Yao Liao, Min-Jui Lin, Hung-Yu Tsao, Jiun-Yun Li
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Realization of a Complementary Full Adder based on Reconfigurable Transistors IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-20 Lukas Wind, Moritz Maierhofer, Andreas Fuchsberger, Masiar Sistani, Walter M. Weber
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The Role of the Programming Trajectory in the Power Dissipation Dynamics and Energy Consumption of Memristive Devices IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-20 E. Miranda, E. Piros, F.L. Aguirre, T. Kim, P. Schreyer, J. Gehrunger, T. Schwarz, T. Oster, K. Hofmann, J. Suñé, C. Hochberger, L. Alff
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Enhancing Reliability of Short-channel Dual gate InGaZnO Thin Film Transistors by Bottom-gate Oxide Engineering IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-09 Kuan-Ju Zhou, Ting-Chang Chang, Po-Yu Yen, Yu-An Chen, Ya-Ting Chien, Bo-Shen Huang, Po-Yi Lee, Tzu-Hsuan Juan, Simon M. Sze, Yang-Shun Fan, Chen-Shuo Huang, Chih-Hung Tsai
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Miniaturized High-Selectivity High-Resistivity-Silicon IPD Bandpass Filter Based on Multiple Transmission Paths IEEE Electron Device Lett. (IF 4.9) Pub Date : 2024-02-09 Jun Zhang, Jin-Xu Xu, Cong Yao, Xiu Yin Zhang