It is my pleasure to welcome Prof. Shengdong Zhang to the Editorial Board of the IEEE Electron Device Letters. A biography and sketch of Prof. Zhang’s research interests can be found in the following. His subject areas are thin-film transistors and optoelectronics, display, and imaging.

In this letter, we present an experimental study on the frequency ( f ) dependence of trap generation under AC negative bias temperature instability (NBTI) stress in Si p-channel fin field-effect transistors (p-FinFETs), by adopting the direct-current current voltage (DCIV) method and an energy profiling technique. The interface trap generation ( $\Delta ~\text{N}_{IT}$ ) and bulk trap generation (

The intrinsic limit on ballisticity of ultra-scaled transistors is investigated. A novel probing technique is presented, which locally resolves the loss of incident fluxes. This projection reveals the scalable and unscalable components of reflection. The poor ballisticity is explained by non-equilibrium distribution around the potential barrier, which triggers a substantial unscalable reflections.

Models of threshold voltage and subthreshold slope (SS) for macaroni channel MOSFET are built for the first time based on the potential model in our previous work. These models clearly illustrate the variations of threshold voltage and subthreshold slope caused by short-channel-effects when changing gate length, silicon thickness, oxide thickness, channel doping concentration, and drain-to-source bias

In this paper, Self-Heating Effect (SHE) of Gate-All-Around (GAA) nanoplate field effect transistor (FET) with variations of active area specifications including number of vertically stacked channels, metal gate thickness, and channel width, is investigated using TCAD simulations. Our research suggests that varying these architecture parameters not only affect overall performance of sub-5-nm node GAA

In this letter, we characterize the electrical properties of commercial bulk 40-nm MOSFETs at room and deep cryogenic temperatures, with a focus on quantum information processing (QIP) applications. At 50 mK, the devices operate as classical FETs or quantum dot devices when either a high or low drain bias is applied, respectively. The operation in classical regime shows improved transconductance and

In this letter, we demonstrate the well-behaved operation of (111) Ge-on-insulator (GOI) n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with excellent electrical characteristics. High crystal quality (111) GOI substrates for the fabrication of (111) GOI nMOSFETs were prepared by a smart-cut process combined with an annealing process at 550 °C. Excellent electrical properties

DC, small, and large signal results are shown under continuous wave and pulsed conditions for a $\beta $ -Ga 2 O 3 metal-oxide-semiconductor field-effect transistor operating at 1 and 2 GHz. The device has a maximum transducer gain, maximum output power, and peak power added efficiency of 13 dB (15 dB), 715 mW/mm (487 mW/mm), and 23.4% (21.2%), respectively at 1 GHz (2 GHz). We observe the continuous

In this letter, we report a large-area lateral AlGaN/GaN-on-Si power rectifier as diode with low turn-on voltage. The lateral field-effect rectifier (LFER) is based on a normally-off HEMT in reverse conduction with very low threshold-voltage and shorted gate-source terminal. A p-GaN gate module was used to realize the normally-off HEMT. The large-area LFER achieves a turn-on voltage of down to 0.2

We reported on a fast-speed and self-powered $\beta $ -Ga 2 O 3 vertical Schottky solar-blind photodiodes of 7 mm $\times7$ mm detecting area. Operated at zero bias, this photovoltaic diode exhibits a peak responsivity of 9.78 A/W at 212 nm with its corresponding specific detectivity of $3.29\times 10^{{14}}$ Jones. An UVC-to-UVA rejection ratio over $10^{{4}}$ is also achieved that is mainly limited

Current crowding effect for AlGaN based ultraviolet-B light-emitting diodes (UVB LEDs) is normally observed at high injection current levels, which can cause non-uniform optical emission and generate very high local heat. In this work, UVB LED with a PNP-AlGaN current spreading layer is fabricated and studied. The PNP-AlGaN current spreading layer is obtained by sandwiching the n-AlGaN layer into the

This paper reports on a 100-nm gate length InP high-electron-mobility transistor (HEMT) technology for cryogenic low-noise amplifiers (LNAs) with ultra-low power dissipation of $112~\mu \text{W}$ . This result was obtained by using 100-nm gate length InP HEMTs with improved transconductance at low drain current through a scaled-down gate-channel distance while maintaining a low gate leakage current

In this letter, we experimentally demonstrated a novel resistive device with a hybrid switching mode that can be alternated between volatile threshold switching and non-volatile resistive switching. The device consists of dual-functional layers VO 2 /HfO 2 sandwiched by symmetrical TiN electrodes. A >20 unified ratio for selectivity and memory window is obtained. Owing to the stable resistive behavior

In this work we examine the position effect of embedded Pt nanocrystals (NCs) within a conductive bridge resistive switching memory (CBRAM) based on SiO 2 which results in self-rectifying properties, low-voltage and more reliable operation. With this material configuration, we derive a large memory window, good spatial and temporal variability, robust pulse endurance and charge retention capabilities

A heterojunction diode between n-type amorphous indium-gallium-zinc-oxide (a-IGZO) and p-type nickel oxide is experimentally demonstrated with self-aligned junction termination. The diode has an abrupt, non-destructive breakdown behavior, and the avalanche breakdown is confirmed by the positive temperature coefficient of the breakdown voltage. The room-temperature breakdown voltage of the device is

We report La alloyed ${ZrO}_{x}$ high- ${k}$ gate insulator (GI) for $ZnO$ thin-film transistors (TFTs) by solution-process. The La concentration in ${ZrO}_{x}$ is varied from 0 to 7.5% for optimum device performance. The atomic force microscopy and X-ray photoelectron spectroscopy analysis of 5% La alloyed ${ZrO}_{x}$ GI show smooth surface with higher metal-oxide (M – O) bonds and reduced defect

Carrier mobility in an amorphous metal-oxide semiconductor (AOS) thin-film transistor (TFT) was analyzed using the Hall effect. First, an amorphous Ga-Sn-O (a-GTO) TFT and that with four electrodes arranged in a square shape are fabricated. Next, a transistor characteristic of the a-GTO TFT is measured, and field-effect mobility ( $\mu _{{\text {FE}}}$ ) is calculated. Moreover, the Hall effect of

Here, the electronic properties and ballistic transport properties of two-dimensional (2D) ZrNBr are comprehensively investigated by the nonequilibrium Green’s function coupled with density functional theory. 2D ZrNBr has a wide direct band gap of 1.82 eV with the highest mobility of 8700cm $^{{2}}\text{V}^{-{1}}\text{s}^{-{1}}$ . Both the n- and p-type 2D ZrNBr MOSFETs with 5-nm channel length hold

We found that during spin-coating and annealing processes, the ambient humidity can have obvious impact on the characteristics of p-channel copper oxide thin-film transistors (TFTs). We studied such impact in great details along with the device operational stability. A dry deposition atmosphere (relative humidity, ${\mathrm {RH}} \le20$ %) is necessary for the best device performance, including a hole

Hysteresis-free and low-voltage operation are essential for low-power-consumption electronics. Herein, MoS 2 transistors configured with bilayer-stacked polymethyl methacrylate (PMMA)/poly (vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) gate dielectric are demonstrated, which leverages the advantages of the hysteresis-free characteristic of PMMA and high- ${k}$ property of P(VDF-TrFE). The trap

We present studies of the color uniformity and thermal stability of a flexible and transparent ${32}\times {32}$ mini-LED array on polyethylene terephthalate (PET) substrate up to a brightness rating of 5000 nits at room temperature, whose brightness is required for outdoor display applications. Surprisingly, even at 5000 nits, the temperature variation on the surface of the LED array is less than

High-performance photodetectors based on an interface modified hybrid perovskite film are reported. Large crystalline grains are formed in perovskite layer with less PbI 2 . The on/off switching ratio higher than 10 5 is achieved. Owing to the enhanced efficiency in carrier transport and extraction, the photodetector with a modified interface shows a transient response time as fast as 110 ns. In addition

This study demonstrates an enhancement-mode (E-mode) InAlN/GaN MOSHEMT on a silicon substrate with a Schottky tri-drain extension (STDE) to yield a large breakdown voltage ( $\text{V}_{\text {BD}}$ ) while maintaining a low on-resistance ( $\text{R}_{\text {on}}$ ). The E-mode operation is realized by a recessed tri-gate nanowire structure. The STDE functions as a drain-connected field plate (FP) to

We predict spontaneous polarization of $\varepsilon $ -Ga 2 O 3 can achieve a high density of 10 14 cm −2 two-dimensional electron gas (2DEG) at the interface of $\varepsilon $ -Ga 2 O 3 and ${m}$ -AlN ( ${m}$ -GaN) without doping. Based on the accurately calculated bandgap alignment of $\varepsilon $ -Ga 2 O 3 , AlN and GaN, we find that the critical thickness of the $\varepsilon $ -Ga 2 O 3 to form

In this letter, planar floating limiting rings (FLRs) and trench FLRs with different trench depths for the 4H-SiC junction barrier Schottky (JBS) rectifiers are analyzed and compared with simulations and experiments. Compared with the planar FLRs, the experimental results present that the first ring spacing window that termination efficiency exceeds 80% of the parallel plane breakdown voltage (BV)

Assist Gate (AG) MOSFET is proposed for low power loss operation of low-voltage power MOSFETs by a new structure with the optimum gate control. The second channel and accumulation layer reduce the channel and drift resistances. In addition, the gate control of AG-MOSFET decreases turn-off loss. 40 and 100 V-class AG-MOSFET characteristics were analyzed using TCAD simulation. The AG-MOSFET improves

The on-resistance limit of 100 V-class Field-Plate (FP) trench power MOSFETs was analyzed by TCAD simulation. In the previous works, the lateral pitch narrowing effect to reduce the on-resistance has been studied from the viewpoint of charge compensate concept. This work focused on optimization of FP oxide thickness, which affects both the breakdown voltage and the stress induced electron mobility

In this study, we investigated diamond metal oxide semiconductor field effect transistors (MOSFETs) with NO 2 p-type doping and Al 2 O 3 passivation layer fabricated on a high-quality heteroepitaxial single crystal (001) diamond substrate called Kenzan diamond ® . MOSFETs with a gate length of 1.4 $\mu \text{m}$ and nearly zero source-gate spacing exhibited a high drain current density of −776 mA/mm

To mymargin evaluate nitrogen-doped diamond as a candidate for Photoconductive Semiconductor Switches (PCSS) triggered in the sub-bandgap visible range, we have fabricated and tested diamond PCSS from a set of diamond grades of varying nitrogen concentration. The nitrogen-doped diamond PCSS have higher responsivity than other diamond optoelectronic devices in the visible range. We present a novel demonstration

A laser direct patterning technology based on a trench method is originally proposed for porous Si device formation, which is fabricated on an ${n}$ -type Si layer of a pn -diode structure. A moat-like trench designed to be a closed cylindrical surface and deep enough to reach the pn -junction separates the pn -diode into an inner part and an outer part. The experimental results clearly show that the

Silicon offers an attractive material platform for hardware realization of quantum computing. In this study, a microscopic stochastic simulation method is developed to model the effect of random interface charge traps in silicon metal-oxide-semiconductor (MOS) quantum gates. The statistical results show that by using a fast two-qubit gate in isotopically purified silicon, the two-qubit silicon-based

Indacenodithiophene-co-benzothiadiazole (ID T-BT), diketopyrrolopyrrole-thieno[3,2-b]thiophene (DPPT-TT), and poly{[N,N’-bis(2-octyldodecyl)-naphthalene-1,4, 5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5’-(2,2’-bithiophene)} (N2200) organic thin-film transistors (OTFTs) with a top-gate structure were patterned by simple oxygen plasma treatment instead of conventional processes such as photolithography and

We report a highly sensitive thin-film transistor (TFT)-based temperature sensor with an ambient air-processed organic-inorganic hybrid perovskite, methylammonium lead iodide (MAPbI 3 ), semiconductor. The threshold voltage of MAPbI 3 TFTs shows a strong linear temperature dependency with a temperature coefficient of −200±10 mV/K – making them good temperature sensors. TFTs with an inorganic (PbI 2

Because of the difficulty in fabricating iron-core solenoid coils by micro electro-mechanical system (MEMS) processes, existing micromotors typically have an axial-flux structure with planar spiral coils or air-core solenoid coils. However, solenoid iron-core microcoils have a higher inductance and a lower magnetic resistivity than spiral coils and air-core solenoid coils. In this study, a radial-flux

In this letter, we pattern thermocouples on the surface of pyramidally-textured dielectric film by careful control of etching and lithography process successfully. Taking advantage of the low thermal conductance and high infrared absorption of the textured dielectric film, the temperature difference between the hot and cold junctions can be increased when this dielectric-film absorber is heated by

Silicon carbide (SiC) nanostructures were synthesized on a silicon (Si) substrate that served as a thermionic cathode. Nanosheets, nanograins, and high-aspect-ratio nanostructures formed on the thermionic cathodes, depending on the synthesis parameters. The calculated work functions of thermionic cathodes ranged from 4.48 eV to 4.83 eV. It can be observed that the work function is attributed to the

This work proposes a novel three-terminal magnetic tunnel junction (MTJ) as a stochastic neuron. The neuron is probabilistically switched based on the voltage-controlled magnetic anisotropy (VCMA) effect with the assistance of Rashba effective field. We find that a restricted Boltzmann machine (RBM) implemented using our proposed neuron for handwritten character recognition can achieve synaptic weight

Through-glass-via based X-band microstrip band-pass filters are wafer-level fabricated by casting molten zinc-aluminum alloy into micromachined glass substrate. Instead of using time-consuming electroplating to form a via based GHz microstrip filter, where seed-layer deposition, plating and seed-layer removal process cycle should be repeated for several times, herein the metal parts of filter, including

We demonstrate a top-down fabricated reconfigurable field effect transistor (RFET) based on a silicon nanowire that can be electrostatically programmed to p- and n-configuration. The device unites a high symmetry of transfer characteristics, high ON/OFF current ratios in both configurations and superior current densities in comparison to other top-down fabricated RFETs. Two NiSi 2 /Si Schottky junctions

This paper presents the fabrication and electrical characterization of superconducting high-aspect ratio through-silicon vias DC-sputtered with aluminum. Fully conformal and void-free coating of $300~\mu \text{m}$ -deep and $50~\mu \text{m}$ -wide vias with Al, a CMOS-compatible and widely available superconductor, was made possible by tailoring a funneled sidewall profile for the axisymmetric vias

In this letter, we report a stretchable HfO 2 -based resistive switching memory device utilizing the wavy structured strategy. The fabricated Cu/HfO 2 /Au device shows reliable and reversible resistive switching behaviors up to a stretching strain of 20%. After being released, the reproducible memory characteristics of the device can still be maintained. The statistical resistive switching parameters

Direct evidence of O 2 -plasma induced contact metal Fermi-level realignment is observed in WSe 2 based SB field-effect transistors (FETs), leading to high hole currents with on/off ratios >10 8 . The formation of tungsten oxide (WO x ) converted from top WSe 2 layers not only serves as an effective p-type dopant, but also unpins the Fermi-level of the metal contacts. The phenomena are corroborated

In recent years, Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) has been considered as one of the most promising non-volatile memory candidates for in-memory computing. However, system-level performance gains using STT-MRAM for in-memory computing at deeply scaled nodes have not been assessed with respect to more mature memory technologies. In this letter, we present perpendicular magnetic

We report the experimental realization of ferroelectricity in Al-doped HfO 2 (HAO) with the lowest reported thermal budget of 500 °C. A HAO film annealed at 500 °C for 30 s exhibits ferroelectricity with a remnant polarization ( ${P}_{{\text {r}}}$ ) of $2.95~\mu \text{C}$ /cm 2 . The ${P}_{{\text {r}}}$ increases to $10.40~\mu \text{C}$ /cm 2 when annealing duration is increased to 5 min, and approaches

Of all two-dimensional semiconductor crystals, WSe 2 is particularly interesting due to its sizable bandgap, high carrier mobility, and compatibility with large-scale synthesis. By passivating WSe 2 MOSFETs with atomic-layer-deposited Al 2 O 3 , they are stable in room environment for more than five months. The passivation also increases their current capacity by two orders of magnitude. Their cutoff

We demonstrate cuprous oxide (Cu 2 O) based screen engineered field effect solar cells with a record breaking efficiency, exceeding 3.486%, for Cu 2 O based p-n homojunction. In this architecture, CuO nanowire interphase is successfully employed in the Cu 2 O fabrication by effectively serving as a simultaneous ohmic current collector. These screen engineered field effect photovoltaic principles are

A novel methodology of the power coupling from rectangular TE 10 mode to TE 20 mode for high-order overmoded multiple sheet electron beam devices is presented in this letter. The mode conversion was realized by an H-plane T-junction based mode converter with E-plane symmetric matching steps and the beam wave convergence/separation was realized by an overmoded Y-shaped coupler with a Bragg reflector

We investigated the performances of GaN junctionless fin-shaped field-effect transistors (FinFETs) with two different types of gate structures; overlapped- and partially covered-gate. DC, low-frequency noise (LFN), and pulsed I-V characterization measurements were performed and analyzed together in order to identify the conduction mechanism and examine both the interface and buffer traps in the devices

This letter reports the polymer passivation of field plated lateral $\beta $ -Ga 2 O 3 MOSFETs with significant improvement in the breakdown voltages as compared to non-passivated devices. We show consistent results of higher breakdown voltages in passivated devices as compared to non-passivated devices for MOSFETs with $\text{L}_{\textit {gd}}$ ranging from $30~\mu \text{m}$ to $70~\mu \text{m}$ and

High performance organic nano-floating gate transistor memory (NFGTM) has important prerequisites of low processing temperature, solution–processable layers and charge trapping medium with high storage capacity. We demonstrate organic NFGTM using black phosphorus quantum dots (BPQDs) as a charge trapping medium by simple spin-coating and low processing temperature (< 120 °C). The BPQDs with diameter

We present a novel design of fine segmented low gain avalanche diodes (LGAD) based on trench-isolation technique. The proposed design reduces the width of the no-gain inter-pad region down to less than $10~\mu \text{m}$ , from the 20- $80~\mu \text{m}$ of the current LGAD technology, enabling the production of sensors with small pixel pitch and high fill-factor. Prototypes of this new technology were

Fast responding room temperature ethanol sensor device, having high detection range, was developed employing dual surface engineered (using palladium (Pd) and Reduced Graphene oxide (RGO)) WO 3 nanospheres as the sensing layer. Three different types of vapor sensor devices, viz. i) Pd/WO 3 (Sensor 1), ii) RGO/WO 3 (Sensor 2) and iii) Pd/RGO/WO 3 (Sensor 3) were fabricated to study the influence of

In this letter, we improved the stability of all-inkjet-printed carbon nanotube thin film transistors (CNT TFTs) by employing a double gate (DG) structure under an optimal bias condition. In the single-gate structure, the positive threshold voltage ( $\text{V}_{\text {TH}}$ ) shift under 10 V positive gate bias stress (PGBS) was significantly reduced with poly(4-vinylphenol) passivation. However, after

In this letter, we propose a new pixel circuit with low-temperature poly-silicon and oxide (LTPO) thin-film transistors (TFTs). The proposed pixel circuit can significantly reduce the power consumption of liquid crystal displays (LCDs) while maintaining their conventional features, by virtue of extremely low off-state current of n-type oxide TFTs and constant data voltages. Furthermore, p-type low-temperature

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It is my pleasure to welcome Prof. Ray-Hua Horng to the Editorial Board of IEEE Electron Device Letters. A biography and sketch of Prof. Horng’s research interests can be found below. Her subject areas are optoelectronics, displays, imaging, compound semiconductor devices, sensors, and actuators.

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