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Prof. Azad Naeemi has decided to step down from the editorial board. On behalf of IEEE Electron Device Letters authors, readers, and staff, I would like to express my deepest gratitude for his contributions and service to the journal over the past five years and wish him continued success in his professional endeavors.

In this letter, we propose a heat-path design for releasing heat confined in FinFETs. Conductive material stacks consisting of metals and vias on silicon can be good heat paths that lower junction temperature. However, they also increase parasitic capacitance, leading to degraded circuit performance. Therefore, we analyzed the impact of various heat paths with different metal stacks and locations on

This letter proposes a new emitter-base-collector-base-emitter (EBCBE) SiGe HBT suited for high power RF switches. Two collector-base-emitter (CBE) SiGe HBTs are merged into a single EBCBE SiGe HBT, not only to double its maximum voltage swing, but also to decrease its active area and parasitics. To further boost its power handling, a capacitive voltage distribution and a collector floating are incorporated

Random trapping and detrapping of charged carriers in the vicinity of gate oxide/Si interface has for long been considered as the dominant noise source in Si nanowire (SiNW) FET-based biochemical sensors. Here we extend our previous work presenting a Schottky junction tri-gate SiNWFETs (SJGFET) fabricated on a bonded silicon-on-insulator (SOI) substrate, aiming for ultra-low device noise generation

A high-performance quasi-vertical GaN Schottky barrier diode (SBD) was successfully fabricated by using a high-quality n − -GaN drift layer with a precisely-controlled n-type doping. A high current on/off ratio of 10 10 , an ideality factor of 1.03, a low specific on-resistance of 1.41 $\text{m}\Omega \cdot $ cm 2 , and a relatively high breakdown voltage (BV) of 250 V have been achieved for the SBD

In this letter, we demonstrate a high-performance lateral AlGaN/GaN Schottky barrier diode (SBD) using an 80-nm thick GaN cap layer as the passivation layer and a low work-function tungsten (W) layer as the anode. A low turn-on voltage ( ${V}_{ON}$ ) of 0.38 V and a high breakdown voltage of 2.08 kV are obtained at the same time. Additionally, the normalized dynamic on-resistance ( ${R}_{ON,dyn}$ )

We propose the Ti/Al/Ni/Ti ohmic contacts to improve the breakdown voltage (V BD ) of GaN-based high electron mobility transistors (HEMTs). Using the same photolithography process, the first Ti/Al metal stack and the second Ni/Ti metal stack were achieved by electron beam (EB) evaporation and magnetron sputter, respectively. Attributed to the better particle filling on the sidewall by magnetron sputtering

We report on achieving high-performance $\beta $ -Ga 2 O 3 power devices through the incorporation of the p-type NiO x . $\beta $ -Ga 2 O 3 p-n heterojunction (HJ) diodes, as well as the novel p-n HJ gate (G) field-effect-transistors (HJ-FETs), have all demonstrated state-of-the-art Baliga’s power figure of merit (P-FOM). The HJ p-n diode is introduced to provide a large built-in potential and alleviate

We report a processing technique to form a surface reinforcement layer (SRL) in GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) with the aim to suppress device dynamic on-resistance (R ON ) degradation caused by long-term hot-electron stress. The SRL is a crystalline (Al)GaON layer formed by reconstruction of the heterojunction surface through plasma oxidation and high

In this letter, a millimeter-wave (mm-wave) dual-band bandpass filter is proposed with large bandwidth ratio by using gallium arsenide (GaAs)-based integrated passive device (IPD) technology. To realize small chip size, one dual-mode on-chip resonator is designed by using quasi-lumped capacitors and microstrip lines. In addition, multiple transmission zeroes are generated by further introducing both

We report a novel Sc/Al/Ni/Au metal scheme for Ohmic contacts to InAlN/GaN HEMT structures on silicon. A contact resistance of $0.39~\Omega $ -mm with a low surface roughness of 20± 3 nm of the annealed contact has been achieved using this metal scheme. The microstructure of the region under the contacts revealed the formation of ~60 nm deep ScGaN inclusions in the GaN channel layer. A thin (~3-5 nm)

The dynamics of the intrinsic threshold voltage ( ${V}_{{\text {TH}}}{)}$ shift in 650-V Schottky-type p-GaN gate HEMT under high-frequency switching is investigated by a bootstrap voltage clamping circuit in which the GaN HEMT serves as the key bootstrapping device. This new testing setup covers a wide range of OFF-state drain bias ( ${V}_{{\text {DSQ}}}{)}$ up to 400V, a short OFF-to-ON (or stress-to-sense)

This work studies the dynamic breakdown voltage (BV) and overvoltage margin of a 650-V-rated commercial GaN power HEMT in hard switching. The dynamic BV measured in the hard switching circuits is over 1.4 kV, being 450 V higher than the static BV measured in the quasi-static I-V sweep. The device can survive at least 1 million hard-switching overvoltage pulses with 1.33 kV peak overvoltage (~95% dynamic

In this letter, a 400-nm-thick $\beta $ -Ga 2 O 3 nanomembrane is extracted from an n-Ga 2 O 3 -on-silicon wafer by wet etching, and then transferred to a p-GaN/ sapphire wafer by transfer-print technique to fabricate n-Ga 2 O 3 /p-GaN heterojunction diodes. X-ray photoelectron spectroscopy (XPS) measurement is used to accurately confirm that the valence-band offset of the heterojunction is 1.41± 0

Current-induced magnetization switching is crucial in high-performance nonvolatile memory especially when the spin-transfer torque (STT) and spin-orbit torque (SOT) are employed in the mainstream magnetic random-access memory. However, in STT devices, the intrinsic mechanism leads to a long write latency, a low endurance, and a high-power consumption, while in SOT devices, a three-terminal structure

We demonstrate a novel method using electric field cycling to induce a phase transition in Hf x Zr 1−x O 2 to reach the morphotropic phase boundary of tetragonal and orthorhombic phase. Conventional methods used to induce the phase transition, such as high temperature annealing, cannot be used with the DRAM cell capacitor fabrication process because it associates with grain enlargement, increased leakage

We report one-volt TiO 2 thin film transistors (TFTs) with a low-temperature fabrication process. The TFTs with the 300 °C-annealed TiO 2 channel exhibit a high on/off current ratio ( $\text{I}_{ \mathrm{\scriptscriptstyle ON}}/\text{I}_{ \mathrm{\scriptscriptstyle OFF}})$ of $5.4\times 10^{7}$ , a low subthreshold swing (SS) of 75 mV/dec and a saturation field effect mobility ( $\mu _{{\mathrm {sat}}}$

In this letter, we report solution-processed, high-performance Indium-Zinc-Oxide (IZO) thin-film transistors (TFTs). The annealing temperature of IZO films are studied and found that devices annealed at 350 °C exhibit the best performance. With the use of a thin Al x O y layer as the gate dielectric, one-volt IZO TFTs are demonstrated, showing a high current on/off ratio of > 10 5 , a high mobility

In this work, we study the intrinsic connection between target quality and performance of sputtered In-Sn-Zn-O (ITZO) thin-film transistors. Using a dense target, the ITZO device overall performance can be improved synergistically. The optimized device exhibits a steep subthreshold swing of 0.13 V/decade, a high on/off current ratio of $2.47\times 10^{{8}}$ , a threshold voltage of −0.03 V, a saturation

A liquid matrix is beneficial for improving the luminescence performance of quantum dots (QDs), although it is difficult to be packaged with light-emitting diode (LED) chips. In this study, liquid-QDs with chlorobenzene solution and melamine-modified urea-formaldehyde (MUF) were used as the core and shell structures, respectively, successfully yielding liquid-QD/MUF microcapsules for white LED packaging

In the increasingly rapid development of perovskite solar cells (PSCs), all-inorganic PSCs, especially Br-rich all-inorganic PSCs, not only inherit the advantages of an adjustable bandgap, and excellent light absorption, but also has superior stability. To find a simple-process and low-cost way to increase perovskite performance, we try to adjust the conduction band of CsPbIBr 2 with the help of dipoles

All-CMOS monolithic microdisplay technologies have been attracting attention due to their direct integration of light-emitting pixel arrays and driving circuits on a single silicon substrate. Improvements to optical power efficiency have been a hot spot for all-silicon microdisplay technologies. MOS-like gate-control structure avalanche-mode light-emitting diodes (AMLEDs) that employ hot-carrier electroluminescence

This letter demonstrates a high performance $\beta $ -Ga 2 O 3 solar-blind metal–oxide–semiconductor field-effect phototransistor (SBPT) with Hafnium Oxide (HfO 2 ) Gate Dielectric. The SBPT shows a high Photo-to-dark-current ratio ( PDCR ) of ${6.9}\times {10}^{{7}}$ , an ${I} _{\text {254 nm}}/ {I}_{\text {365 nm}}$ rejection ratio of ${6.0}\times {10}^{{7}}$ combined with an external quantum efficiency

The near-infrared (NIR) polarized photodetector has wide range of applications including the object identification. Wavelength of 1550 nm is the least loss band for transmission communication, and the study of photodetectors working at 1550 nm demonstrate special scientific and applied significances. GaSb has attracted tremendous attention in the field of photoelectric detection due to its suitbale

Quantum dot (QD)-based optoelectronics have attracted significant interest for extensive applications due to their unique photo-functionalities such as excellent optical absorption coefficient, size-dependent bandgap tunability, and facile solution processability. However, the charge transfer correlation between surface functionalization and optoelectronic properties is still not clear. Here, we report

This work reports the transient measurement of the AlGaN/GaN high electron-mobility transistor (HEMT) drift region potential in the high power state during switching. The effect of high power stress has been reported by device characterization after stress or during high power DC stress at voltages below the operating voltages to avoid device failure. However, transient measurement during high power

It is found that many two-dimensional materials are easy to obtain out-of-plane piezoelectric properties because of their Janus structure. Here, based on the monolayer GeSe and SnSe, we study the electronic structure and piezoelectricity of the Janus M 2 SeX (M=Ge, Sn; X=S, Te) monolayers. Due to the lack of inversion symmetry and mirror symmetry, as well as flexible mechanical properties, the 2D Janus

As theoretically predicted by Prof. Chua, the input signal frequency has a major impact on the electrical behavior of memristors. According with one of the so-called fingerprints of such devices, the resistive window, i.e. the difference between the low and high resistance states, shrinks as the frequency increases. Physically, this effect stems from the incapability of ions/vacancies to follow the

A through-plastic-via (TPV) three-dimensional (3D) integration approach is developed to integrate the organic field effect transistor (OFET) circuitry and the sensing/reference electrodes (SE/RE) for flexible bio-chemical sensor chips. Based on this approach, the SE can be fabricated using optimal processes on a different plastic substrate without concern of affecting the OFET part. Taking H + detection

In this letter, we systematically study the adsorption and sensing properties of SO 2 , SO 3 and NO 2 on 2D pentagonal PdSe 2 by combining density functional theory and nonequilibrium Green’s function. The calculated adsorption energy, charge transfer, electron localization functional, and density of states indicate PdSe 2 monolayer is more sensitive to NO 2 and SO 3 gases than other gases. Moreover

In recent years, surface acoustic wave (SAW) devices have demonstrated great potentials and increasing applications in the manipulation of nano- and micro-particles including biological cells with the advantages of label-free, high sensitivity and accuracy. In this letter, we introduce a novel tilted-angle SAW devices to optimise the acoustic pressure inside a microchannel for cancer-cell manipulation

This letter presents a high performance rate-integrating honeycomb disk resonator gyroscope (HDRG). High Q factor resonator and symmetric vibration detection gain are the key to high performance rate-integrating gyroscope. By stiffness-mass decoupling design, HDRG can achieve high Q factor of about 600k and decay time of over 44s. A compensation method is applied to suppress the rate-dependent angular

In this letter, we report a high performance humidity sensor composed of a nanoforest-based sensing capacitor, a thermistor, a micro-heater, and a reference capacitor. Compared with traditional polyimide-based humidity sensors, sensitivity of the nanoforest-based one is significantly improved by 15 times in a relative humidity range of 10-90% RH. Meanwhile, integration of a micro-heater into the humidity

The flexible piezoresistive sensors have versatile applications for healthcare. The fabrication procedures of these sensors are generally costly, complex, and environmentally unfriendly. Herein, we use L-cystine as the green reductant and templating agent to prepare 3D reduced graphene oxide (rGO) aerogel, and polyvinyl chloride tape as the substrates to encapsulate the aerogel for making the piezoresistive

We propose and experimentally demonstrate a high-power and wide-bandwidth terahertz travelling wave tube (TWT), which is with two cascade amplification sections: the output wave of the first TWT is used as the input of the second one. Using a 17 kV, 71 mA electron beam, the measured peak power is over 60 watt and the average output power is over 12 watts with 20% duty cycle at the frequency around

A reliable design of physical unclonable function (PUF) based on spin-orbit torque (SOT) induced domain wall (DW) motion has been proposed and experimentally demonstrated. Magnetic DWs are nucleated and propagate in Ta/CoFeB/MgO heterostructures in which their device-to-device variation enables the PUF, while cycle-to-cycle variation in DW motion enables the reconfigurable design. Furthermore, field-free

The gate-controlled quantum capacitance and the channel resistance play an important role in the performance of graphene field-effect transistors (GFETs). This paper experimentally verifies that the output phase of the graphene field-effect transistor changes under the influence of quantum capacitance and the channel resistance, which are controlled by the gate voltage. This phenomenon is theoretically

A ferroelectric based electrostatic doping (Fe-ED) technique is proposed, as the alternative to chemical doping, providing non-volatile and programmable free electrons and holes for nanoscale devices. We show that Fe-ED achieves non-volatility and reconfigurability via the ferroelectric film inserted into the polarity gate, producing the reconfigurable nanosheet FETs (NSFETs) without the requirement

To overcome the performance degradation in hardware neural networks (NNs) with non-ideal synapse devices, we proposed a novel neuromorphic architecture with both TiO x -based interfacial RRAM and CBRAM-based filamentary RRAM for highly accurate NN training and long-term inference reliability. We used a threshold-triggered training scheme, in which interfacial and filamentary RRAMs were programmed in

We propose an AgGeSe/Al 2 O 3 /Pt selector with great potential in a dense memory array. In terms of on-current drive, selectivity, and uniformity, devices with the mixed AgGeSe layer outperform the Ag/Al 2 O 3 /Pt device. The introduction of GeSe not only blocks the diffusion of Ag, but also facilitates the backflow of Ag to the active electrode, therefore increasing the on-current. The ultra-high

A double-HZO (HfZrO 2 ) FeFET (ferroelectric FET) with nonidentical ferroelectric thicknesses is experimentally demonstrated with as low as $\vert {V}_{P/{E}}\vert = {5}$ V, 2-bit endurance > 10 5 cycles and retention > 10 4 s. Inserting an insulator to separate the ferroelectric layers and avoid the monoclinic formation of a thick Fe-HZO (ferroelectric-HZO) is a useful method to enhance the MW (memory

Ultrafast current-driven domain wall (DW) motions have been realized in ferrimagnetic (FiM) nanowires. However, the FiM dynamics can be significantly affected by the Joule-heating. In this work, we propose a highly efficient XNOR logic gate by properly leveraging the thermal effect on the FiM DW motions. Its functionality and advantageous performance have been confirmed by the micromagnetic simulations

Stable working voltage is critical for integrated systems to keep functioning, yet it suffered from instantaneous high-power demands and the resulting voltage disturbance. An on-chip micro supercapacitor (MSC) with superb capacitance density can act as a promising high-power supply unit to satisfy power demands and stabilize the system. However, severe capacitance decay of MSC under fast charge/discharge

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Prof. Albert Chin, having served as an Editor for IEEE Electron Device Letters since 2012, has completed his tenure. On behalf of IEEE Electron Device Letters staff and readers, I would like to thank him for his excellent contribution and dedicated service to the journal over the past nine years.

Prof. Steven J. Koester, having served as an Editor for IEEE ELECTRON DEVICE LETTERS since 2012, has completed his tenure. On behalf of IEEE ELECTRON DEVICE LETTERS staff and readers, I would like to thank him for his excellent contribution and dedicated service to the journal over the past nine years.

It is my pleasure to welcome Prof. Tae-Yeon Seong to the Editorial Board of IEEE Electron Device Letters. A biography and sketch of Prof. Seong’s research interests can be found below. His subject areas are wide-bandgap semiconductors (GaN, SiC, diamond, and Ga2O3) and group III–V semiconductor optoelectronic devices (LED, photodetector, solar cell, and LD), and their fabrication process, reliability

PROF. Aaron Voon-Yew Thean has completed her terms as an Editor. On behalf of IEEE Electron Device Letters authors, readers, and staff, I would like to express my deepest gratitude for his contributions and service to the journal over the past five years and wish him continued success in his professional endeavors.

This work presents the experimental evidence and impact of the conductivity modulation in the direct-bandgap GaN vertical PiN diode, by using pulse-mode and time-resolved characterizations as well as high-speed board-level switching tests. For the first time, the dependence of the forward transient behaviors in the vertical GaN PiN diode on time, current and temperature has been comprehensively investigated