It is my great pleasure to announce the winner of the 2020 Electron Devices Society George E. Smith Award given to a paper published in IEEE Electron Device Letters in 2020. The selection was made by vote of EDL’s Editors. The letter is titled “Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect Transistors” and it is authored by Arnout Beckers, Farzan Jazaeri, and Christian Enz

We successfully fabricated a Ge pMOSFET with Ti that is doped into a GeO x interfacial layer (IL) of HfO 2 -based gate stacks, doing so using in situ plasma-enhanced atomic layer deposition. X-ray photoelectron spectroscopy (XPS) spectra findings indicated that Ti-doped IL can suppress GeO x volatilization. A Ti-doped GeO x gate stack exhibited a lower interface state density of approximately $6\times

Low-frequency noise has become one of the critical factors in ultra-scaled MOSFET devices, and is also effective as an evaluating tool in characterizing device structure and reliability. Here, the low-frequency noise in 14 nm-FinFET is studied, and its dependence on trap defects of high-k dielectric and interface is further experimentally investigated. By using NH 3 /N 2 thermal processing in high-k/metal

A closely coupled double-channel (DC) structure realized on an 8-inch GaN-on-Si wafer is utilized to fabricate GaN high-electron-mobility-transistors (HEMTs) with enhanced RF linearity. The strong channel-to-channel coupling from this DC structure enables efficient transport of electrons between the two parallel channels to accommodate balanced carrier concentration and current density between the

A 60-GHz compact dual-mode on-chip bandpass filter (BPF) is presented using gallium arsenide (GaAs) technology. To demonstrate the working mechanism of the proposed BPF, an LC equivalent circuit model is conceived and analyzed for further investigation of the transmission poles and zeros. Finally, a prototype of the BPF is fabricated and tested to validate the proposed idea, whose simulated and measured

Junction termination extension (JTE) is a mature edge termination structure in Si and SiC power devices, but remains a technical challenge in GaN due to lack of mature selective area doping technique. In this work, GaN vertical p-n diodes with Hydrogen-Modulated Step Graded JTE (HMSG-JTE) are realized by gradually enlarging photolithography windows for hydrogen plasma treatment and controlled thermal

We report enhancement-mode ${p}$ -channel heterojunction field-effect transistors (HFETs) without gate recess on a standard ${p}$ -GaN/AlGaN/GaN high electron mobility transistor (HEMT) platform. The ${p}$ -GaN in the gate region was partially passivated by a low-power hydrogen plasma treatment process, and the remaining active ${p}$ -GaN and the underlying AlGaN formed the ${p}$ -channel. The device

The low thermal conductivity of Ga 2 O 3 has arguably been the most serious concern for Ga 2 O 3 power and RF devices. Despite many simulation studies, there is no experimental report on the thermal resistance of a large-area, packaged Ga 2 O 3 device. This work fills this gap by demonstrating a 15-A double-side packaged Ga 2 O 3 Schottky barrier diode (SBD) and measuring its junction-to-case thermal

Planar Gunn diodes on In 0.53 Ga 0.47 As with lengths between 2 and 5 $\mu \text{m}$ have been fabricated and characterized in a temperature range of 10 to 300 K. Two different oscillation regimes are observed depending on temperature. At the higher values, the frequency of the oscillations decreases as the bias increases, as expected for a well-established transit-time domain mode. But below approximately

We report a vertical (001) $\beta $ -Ga 2 O 3 field-plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of $1.7~\mu {m}$ was used to enable a punch-through (PT) field profile and very low differential specific on-resistance ( $\text{R}_{\text {on-sp}}$ ) of 0.32 $\text{m}\Omega $ -cm 2 . The extreme permittivity field plate oxide facilitated

A synergistic approach for optimizing devices, circuits, and neural network architectures was used to abate junction-temperature-change-induced performance degradation of an Fe-FinFET-based artificial neural network. We demonstrated that the digital nature of the binarized neural network, with the “0” state programmed deep in the subthreshold and the “1” state in strong inversion, is crucial for robust

Retention characteristics of 3D NAND Flash cells are investigated at various temperatures ( ${T}$ ) depending on the degree of program and erase. The $\Delta {V}_{\text {th}}$ for each condition is compared to understand the degradation of the retention characteristics attributable to vertical loss and/or lateral diffusion. In addition, the relationship between Program/Erase (PE) window (PGM ${V}_{\text

A plasma-based undoped-HfO 2 FeFET (ferroelectric FET) with non-volatile memory characteristics is demonstrated. Modifying the O 2 plasma period in plasma-enhanced atomic layer deposition (PE-ALD) is an effective approach to enhance the remnant polarization ( $\text{P}_{\text {r}}$ ) up to 2P $_{\text {r}} = 25\,\,\mu \text{C}$ /cm 2 for the MFM (metal/ferroelectric/metal) structure with ferroelectric

Despite tremendous interests in ferroelectric field-effect transistors (FEFETs) for embedded, data-centric applications, the fundamental trade-offs between memory window (MW) and write voltage to optimize performance remains poorly understood. To that end, we fabricated ferroelectric (FE) $ZrO_{2}$ based, p-type FEFETs and studied the impacts of FE and the interfacial oxide layer (IL) thicknesses (

In this work, a comprehensive study of random spatial fluctuation of the ferroelectric (FE) phase and dielectric (DE) phase in FeFETs is conducted to understand its impact on device variation. It is found that: i) there exists a certain DE percentage threshold that below which the increase of the DE phase does not significantly impact the device memory window and variation and only above which evident

In this letter, we demonstrate a reconfigurable logic-memory hybrid device (R-LMHD), which can be dynamically and reversibly switched between the logic- and memory- mode. The logic-mode device exhibits a $2.5\times 10^{6}$ ON/ OFF current ratio and nearly zero hysteresis, which indicates the weak influence of defects trapping and de-trapping. The memory-mode device shows a large memory window up to

In this work, a new operation scheme is developed to improve the state stability of multi-level resistive random-access memory (RRAM) array. We found that the state instability after programming is mainly derived from the excessive oxygen vacancies generated by the abrupt SET process. Based on the understanding of the state stability after operation, triangular pulse is adopted for the programming

We report a heterojunction, nonvolatile memory (NVM) device with amorphous indium-gallium-zinc oxide (a – IGZO) and low-temperature polysilicon (LTPS) stack. The LTPS layer was achieved by blue laser annealing of amorphous silicon. The a – IGZO/LTPS heterojunction NVM exhibits a large threshold voltage $(\Delta {\mathsf {V}}_{\mathsf {Th}}({\mathsf {V}}))$ memory window of 19.2 V with prolonged operational

The effects of top gate/InGaZnO back interface on the performance of dual-gate InGaZnO thin-film transistor (TFT) with an unisolated top gate structure are investigated by both experiment and simulation. The back interface is intentionally modulated by using post-metallization annealing (PMA) treatment. The PMA treatment motivates the interfacial reaction and thus results in the formation of an obvious

Neuromorphic computing, with information sensing, processing, and storage capabilities, is driving the development of a new generation of artificial intelligence (AI). Photonic synaptic devices are essential components for improving information processing efficiency owing to their advantages of a high propagation speed, low latency, and large bandwidth. In this study, a photonic synaptic transistor

The quantum dot (QD) color-conversion efficiency (CCE) in GaN micro-light-emitting diodes ( $\mu $ LEDs) is greatly improved by non-radiative energy transfer (NRET) mechanism. An array of deep nano-holes with a diameter of about $1~\mu \text{m}$ was fabricated in $\mu $ LED mesas ( $40\times 60\,\,\mu \text{m}^{2}$ ) by nanoimprint lithography. The nano-holes were etched straight through the $\mu $

The CMOS silicon avalanche-mode light-emitting diode (AMLED) has emerged as a potential light source for monolithic optical interconnects. Earlier we presented a superjunction light-emitting diode (SJLED) that offers a higher electroluminescent intensity compared to a conventional AMLED because of its more uniform field distribution. However, for reducing power consumption low-voltage ( $\leq 15\text{V}$

Deep-ultraviolet (DUV) photodetection has garnered extensive research interest for its vital applications in many military and civil fields. In this work, we present the synthesis of a large-area two-dimensional (2D) PdTe 2 multilayer, which can be directly transferred onto a GaN substrate to construct a vertical heterostructure for visible-blind DUV photodetection. Upon 265 nm light irradiation, the

In this letter, we present a small pixel pitch image sensor optimized for high external quantum efficiency in short-wavelength infrared (SWIR). Thin-film photodiodes based on PbS colloidal quantum dot (CQD) absorber allow us to exceed the spectral limitations of silicon’s absorption while maintaining the benefits of CMOS technology. By monolithically integrating PbS CDQ thin films with CMOS readout

Small-area perovskite photodiodes with an active area of $50\,\,\mu \text{m}\,\,\times 50\,\,\mu \text{m}$ are achieved, showing both high specific detectivity and excellent stability. The device exhibits a low dark current density of $\sim 1.6\times 10 ^{-8}$ A/cm 2 at a reverse bias of 0.1 V, a peak photoresponsivity of 1.74 A/W, and a peak specific detectivity of $1.5\times 10 ^{13}$ Jones. Moreover

In this work, QDs/hBNs/silicone annular fins (QDs-AF) are proposed as a new type of packaging structure to establish rapid heat dissipation pathways between QDs and heat sink. The QDs-AF structure was firstly designed based on commercial LEDs modules. Then, the annular fin materials including QDs, thermally conductive hBN platelets (hBNs), and silicone were determined by balancing the tradeoff of optical

Wafer level transient voltage measurement (WLTVM) to estimate the short circuit capability of AlGaN/GaN HEMT devices is suggested. Two groups of samples with similar DC and switching properties but different short circuit capabilities of 4-7 and $>{10}\mu \text{s}$ were evaluated. The extracted junction temperature and the measured saturation/linear current under repeated short circuit stresses suggest

Inorganic semiconductors have the potential features to enhance the stability and performance of printed electronic devices. In this work, we present a microcantilever ( $\mu \text{C}$ ) printed device by using zinc oxide (ZnO) and silver nanoparticles (AgNP) ink. Two types of devices have been fabricated on silicon wafers using two methods: (i) the ZnO ink is printed between two $\mu \text{C}$ printed

The demand for high-temperature energy storage capacitors arises to meet the noticeable increase in integration density of electronic devices. In pursuit of optimized energy storage performance at elevated temperatures, 0.85BaTiO 3 –0.15Bi(Mg 0.5 Zr 0.5 )O 3 (BT-BMZ) thin film capacitors were prepared on graphene/silicon substrate in this work. Taking advantage of remarkable lateral heat dissipation

Field effect transistors are considered one of the key technologies to provide real-time and label-free biodetection. Direct detection in physiological solutions is, however, severely limited by the Debye charge-screening effect of the electrical double layer. Most measurements are therefore performed indirectly in diluted ionic-strength solutions. This study proposes a general technique based on modulation

Cephalopods can swiftly merge into the surroundings by changing their skin color even without the involvement of brains. Inspired by this ability, we designed a tunable, environment- adaptive camouflagic artificial reflex arc that can independently activate electrochromism in response to optical stimuli. The receptor of this arc consists in a light-stimulated synaptic transistor (LSST) that also performs

A low voltage standing wave ratio (VSWR) broad bandwidth pillbox window with metamaterial is proposed for W-band traveling-wave tubes (TWTs) in this paper. The metamaterial structure is designed on a dielectric surface, which decreases the VSWR and broadens the bandwidth of the pillbox window. The cold-test results of the window with metamaterial are presented, which showed that the metamaterial pillbox

A 500 GHz TE 85 mode continuously frequency-tunable gyrotron has been designed, fabricated and investigated experimentally. In the experiment, the gyrotron operates at the second cyclotron harmonic stably. The operating frequency is tuned by means of adjusting the operating magnetic field or the beam energy. The variation of the output power is also investigated. It is found that when the operating

Progress on improving the thermoelectric power factor (PF) of InGaZnO thin films by various surface treatment techniques has been seriously hindered by the innate coupled but opposing relationship between its electrical conductivity ( $\sigma _{{\mathrm {e}}}$ ) and Seebeck coefficient (S) . Therefore, proposing unique solutions to decouple these properties is crucial in advancing its thermoelectric

We use atomistic quantum transport device simulations to investigate the contact resistance ( ${R}_{C}$ ) in monoelemental 2D material nanoribbon MOSFETs with edge contacts. The consequences of attaching metal electrodes to source/drain regions are investigated for various metal-channel interaction strengths and nanoribbon dimensions. We find that ${R}_{C}$ is minimized by using moderately interacting

In this letter, a wideband bandpass filter for 5G application is proposed. The filter is implemented in GF 45-nm CMOS SOI (silicon-on-insulator) and is a 4-pole/ 4-zero design which greatly enhance the filter selectivity and out-of-band rejection. Measurements show a filter 3-dB bandwidth of 22-44 GHz, and covers the millimeter-wave 5G 26/28/39 GHz bands. The minimum insertion loss is 1.5 dB with a

The above letter [1] , the corresponding author should be “Wenxin Liu” instead of “Wenxin Liu and Weihao Liu,” Wenxin Liu is the sole corresponding author.

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Due to extremely tight Contacted Poly Pitch (CPP) in sub-10 nm nodes, specific contact resistivity ( $\rho _{{\text {c}}}$ ) has become the main concern for further improvement of transistor performance. Both the reduction of Schottky barrier heights (SBHs) and the enhancement of surface dopant concentration ( $\text{N}_{{\text {s}}}$ ) are considered as the most effective approaches to reduce $\rho

A novel CMOS-compatible SiGe Tunnel Field-Effect Transistor (TFET) with a high current drivability is demonstrated, which features a vertically-stacked SiGe nanosheet (NS) with high Ge content and gate-all-around(GAA) structure to improve carrier injection efficiency and gate controllability. A multi-NS Si 0.2 Ge 0.8 channel is formed by the Si selective etching and Ge condensation technique. The measured

Ultrathin equivalent oxide thickness (EOT) scaling of TiN/Y 2 O 3 /SiGe gate stacks using a trimethylaluminum (TMA) treatment was studied. In comparison to previously reported high-k/SiGe MOS interfaces utilizing various Ge contents, we obtained an EOT scaling down to 1 nm with ultralow interface trap densities ( $\text{D}_{\text {it}}$ ). In addition, the impact of EOT scaling on the SiGe MOS interface

In this letter, we report the influence of p-GaN body doping concentration on the ON-state performance of vertical GaN trench MOSFETs. Decreasing the p-GaN body doping concentration leads to an enhanced maximum drain current ( ${I} _{D,\max}$ ), reduced specific ON-resistance ( ${R} _{ \mathrm{\scriptscriptstyle ON},\mathrm{sp}}$ ), but also a decreased threshold voltage ( ${V} _{th}$ ), suggesting

In this letter, we report a quasi-vertical GaN junction barrier Schottky diode on low-cost sapphire substrate. With the high quality GaN epitaxy and selective-area p-islands formed via Magnesium ion implantation at the anode region, reverse leakage in level of 10 −7 A/cm 2 was achieved, as well as a high on/off current ratio of 10 10 and a high breakdown voltage of 838 V. Meanwhile, advantageous characteristics

Cr/Al/Ti/Au stacks with two thicknesses of Al layers were employed as reflective n-type electrodes for 274 nm AlGaN-based flip-chip deep ultraviolet light-emitting diodes (DUV LEDs). Large bulges arose in the annealed n-type electrode with 120-nm-thick Al layer, resulting in cracks within the upper rugged SiO 2 passivation layer after burn-in test. Sn atoms from solder paste migrated along the cracks

Compact resonant tunneling diode (RTD) oscillators have attracted considerable attention for terahertz generation at room temperature. Here, we propose and fabricate a novel and highly efficient RTD with a square split ring resonator (SRR). An AlAs/InGaAs double-barrier RTD is integrated into the center split gap of the SRR with a perimeter of $52~\mu \text{m}$ . Coplanar stripline antennas are integrated

In a ${p}$ -channel field-effect-transistor ( ${p}$ -FET) bridge HEMT device recently realized on a commercial ${p}$ -GaN/AlGaN/GaN-on-Si power HEMT epi-wafer, it is revealed that the device’s reverse-conduction turn-on voltage ( ${V}_{\text {RT}}$ ) can be effectively decoupled from the forward threshold voltage ( ${V}_{\text {TH}}$ ) of Schottky-type ${p}$ -GaN gate HEMTs. Unlike the conventional

A titanium oxynitride (TiO x N y ) resistive random-access memory (RRAM) with write-once-read-many-times (WORM) characteristics is proposed. The TiO x N y resistive switching (RS) layer with a thickness of 62 nm was fabricated using a thermal nitridation process of an evaporated Ti metal film. The residual Ti layer with a thickness of 8 nm is used as the bottom contact. The Al/TiO x N y /Ti/n + -Si

We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding 10 10 cycles. The ferroelectric transistors (FeFETs) incorporate a high- $\kappa $ interfacial layer (IL) of thermally grown silicon nitride (SiN x ) and a thin 4.5 nm layer of Zr-doped FE-HfO 2 (HZO) on a ~30 nm silicon on insulator (SOI) channel. The device shows a ~1V memory window (MW)

In this letter, bipolar phototransistors based on wide bandgap organic-inorganic semiconductor bilayer structure are designed for broadband optical detection. Through purposeful material selection and band matching, the energy level difference of heterojunction interface is obtained to promote photo-induced charge separation and realize optical detection from ultraviolet to near-infrared. Via the suppression

Artificial perception system is expected to perceive and integrate a large amount of sensory data to dynamically train inspired neural networks. It is expected to become a promising candidate for the realization of new imitating neural networks. But all reported artificial perception usually requires additional voltage to operate the tactile sensor, and most of the research on tactile sensing lacks

This study proposes a model of mobility and negative bias stress stability degradation mechanism of zinc oxynitride (ZnON) thin-film transistors (TFTs) with various anion compositions. The subgap density of states (DOS) for ZnON TFTs were extracted using monochromatic photonic capacitance–voltage measurement. The extracted subgap DOS indicated an additional nitrogen-related subgap peak was observed

P-type tin monoxide (SnO) thin-film phototransistors were developed with high photoresponsivity of $2.94\times 10^{{5}}$ A/W and high detectivity of $1.82\times 10^{{14}}$ Jones, and these values are, to the best of our knowledge, among the highest for the reported oxide-semiconductor-based phototransistors. The excellent performances of these phototransistors were further demonstrated by incorporating

An amorphous-metal-oxide-semiconductor (AOS) thin-film planar-type spike-timing-dependent-plasticity (STDP) synapse device has been developed. The AOS is a non-rare material and can be easily deposited, and therefore it is inexpensive. On the other hand, the STDP is promising as a learning principle for neuromorphic systems. In this study, first, an AOS thin-film planar-type STDP synapse device is

Recently, there are many breakthroughs of display in the high resolution and vivid colors for applications in virtual/augmented reality. In this study, we have successfully developed a $64 \times 32$ array inline structure of a micro-LED ( $\mu $ LED) display by metal bonding an LED array with a glass circuit for connecting a passive matrix IC driver. The dimension of each $\mu $ LED was $100\,\,\mu

This letter reports the fabrication of copper-oxide (CuO) single-nanowire (SNW) back-to-back Schottky diode for white light detection. The device fabrication includes the synthesis of nanowires by thermal oxidation of copper, followed by microcantilever contact print ( $\mu $ CCP) of silver nanoparticles (AgNP) electrodes. The metal-semiconductor-metal (MSM) structure exhibits a dark current of 1.40

This letter proposes an analytical model on the energy efficiency for visible light communications (VLC) based on light-emitting diode (LED). We certify the variation pattern of energy efficiency of LEDs follows the second-order system rather than the first-order system like the LED’s frequency response. This pattern means considerable power loss in the VLC transmission, which should be taken care

We demonstrated amber InGaN $47\times 47\,\,\mu \text{m}^{{2}}$ micro-light-emitting diodes ( $\mu $ LEDs) with the peak wavelength of 606 nm and full-width at maximum (FWHM) of 50 nm at 20 A/cm 2 . The amber $\mu $ LEDs exhibited a 33-nm blue-shift of the peak wavelength and obtain broader FWHMs to approximately 56 nm at 5 to 100 A/cm 2 . The peak on-wafer external quantum efficiency was 0.56% at

Noncarrier injection (NCI) mode is an emerging driving mode for nanoscale light-emitting diodes (LEDs). Here, we demonstrate that a single light pulse from NCI-LEDs can be split into multiple pulses with small pulse widths that cannot be obtained by using traditional driving technology. Light-pulse splitting is achieved by using a combined signal that is a superposition of a basic signal and a signal