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Table of contents IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-24
Presents the table of contents for this issue of this publication. Presents the table of contents for this issue of the publication.
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IEEE Transactions on Electron Devices publication information IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-24
Provides a listing of current staff, committee members and society officers.
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Interfacial Properties of nMOSFETs With Different Al2O3 Capping Layer Thickness and TiN Gate Stacks IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-15 Danghui Wang; Tianhan Xu; Eddy Simoen; Bogdan Govoreanu; Cor Claeys; Yang Zhang
In this article, the interfacial properties of nMOSFETs with different thickness high- $\kappa $ Al 2 O 3 capping layer on an 8-nm SiO 2 and TiN gate stacks have been investigated using electrical measurement and low-frequency noise at room temperature. It is shown that the predominant 1/ ${f}$ noise is governed by the number fluctuations mechanism. It is indicated that: 1) presence of an Al 2 O 3
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2-D-Nonlinear Electrothermal Model for Investigating the Self-Heating Effect in GAAFET Transistors IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-20 Maissa Belkhiria; Fraj Echouchene; Nejeh Jaba; Abdullah Bajahzar; Hafedh Belmabrouk
The objective of the present study is to analyze the heat transfer in the gate-all-around (GAA) MOSFETs based on the Cattaneo and Vernotte (CV) model due to the finite heat propagation speed in these nanodevices. The derivation of the CV model from the Boltzmann transport equation (BTE) is presented. Using the finite-element method, the nonlinear heat conduction model coupled with Poisson and continuity
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The Relationship Between Resistive Protective Oxide (RPO) and Hot Carrier Stress (HCS) Degradation in n-Channel LD SOI MOSFET IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-20 Yu-Shan Lin; Li-Hui Chen; Ting-Chang Chang; Kuan-Ju Liu; Chien-Yu Lin; Fong-Min Ciou
This article investigates the influence of resistive protective oxide (RPO) layer density and hot carrier stress (HCS) degradation in n-channel lateral diffused silicon-on-insulator metal–oxide–semiconductor field-effect transistors. At the beginning of HCS at a higher gate voltage ( ${V}_{G}$ ), the threshold voltage shifts and subthreshold swing increase, but the ON-state current will still increase
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Boundary Regions and Their Contribution to Current Spreading in Grounded Gate Nmosts IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-27 Gijs J. de Raad
3-D-TCAD results are presented showing current density profiles for triggered GGNmosts with substantial, and with minimal, drain ballast resistance. That same variation is repeated on two more GGNmosts with reduced source ballast resistance, which reduces the electron–hole current ratio. The simulated current density profiles fill only part of the device, while in the complementary part of the device
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Experimental Validation of Process-Induced Variability Aware SPICE Simulation Platform for Sub-20 nm FinFET Technologies IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-08 Amita Rawat; Neha Sharan; Doyoung Jang; Thomas Chiarella; Fabian M. Bufler; Francky Catthoor; Bertrand Parvais; Udayan Ganguly
We propose an experimentally validated physics-based process-induced variability (PIV) aware SPICE simulation framework–enabling the estimation of performance variation due to line-edge-roughness (LER), metal-gate-granularity (MGG), random-dopant-fluctuation (RDF), and oxide-thickness-variation (OTV) at sub-20 nm technology node devices. The framework utilizes LER, RDF, OTV, and MGG defining parameters
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Modeling Peak Temperature in SOI-FinFET-Like Structures Considering 2-D Heat Flow IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-04 K. Nidhin; Deleep R. Nair; Anjan Chakravorty
An analytical thermal model to predict the peak temperature in silicon-on-insulator (SOI)-FinFET-like structures is proposed. The device is divided into two regions based on two separate heat flow paths and each region is analyzed and modeled independently to estimate the corresponding peak temperature. Later both the models are combined to obtain the peak temperature for the device. The temperature
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Variability of p-n Junctions and SiGe HBTs at Cryogenic Temperatures IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-08 Hanbin Ying; Jeffrey W. Teng; Uppili S. Raghunathan; Jackson P. Moody; John D. Cressler
This investigation examines the physical mechanisms that can increase the variability of both p-n junctions and silicon–germanium heterojunction bipolar transistors (SiGe HBTs) at cryogenic temperatures. The important operative mechanisms responsible for device parameter variability include bandgap narrowing due to heavy doping, mechanical stress, and the Ge profile. The impact of direct tunneling
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InAlN/GaN HEMT on Si With fmax = 270 GHz IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-20 Peng Cui; Meng Jia; Hang Chen; Guangyang Lin; Jie Zhang; Lars Gundlach; John Q. Xiao; Yuping Zeng
Device surface properties are critical for its performance such as channel electron density, leakage current, subthreshold swing (SS), and noise in gallium nitride high-electron-mobility transistors (HEMTs). In this article, the improved surface property of InAlN/GaN HEMTs with forming gas (FG, 5% H 2 , and 95% N 2 ) annealing is demonstrated. X-ray photoelectron spectra (XPS) show that the number
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Effect of Atmosphere on Electrical Characteristics of AlGaN/GaN HEMTs Under Hot-Electron Stress IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-20 C. Liu; Y. Q. Chen; Y. Liu; P. Lai; Z. Y. He; Y. F. En; T. Y. Wang; Y. Huang
In this work, we demonstrate the degradation behavior and physical mechanism of AlGaN/GaN high-electron-mobility transistors (HEMTs) under hot-electron stress in hydrogen and nitrogen atmosphere. According to the monitoring results, the trends of ${I}_{\text {ds}}$ values are completely different during the same hot-electron stress in two types of atmosphere. The ${I}_{\text {ds}}$ values of the devices
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Nonalloyed Ohmic Contacts in AlGaN/GaN HEMTs With MOCVD Regrowth of InGaN for Ka-Band Applications IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-22 Hüseyin Çakmak; Mustafa Öztürk; Ekmel Özbay; Bilge İmer
Low-resistance ohmic contacts in AlGaN/GaN high-electron-mobility transistor (HEMT) devices require high-temperature (HT) annealing (> 800 °C) which can deteriorate material quality, surface morphology, and edge acuity of the metal stacks. This article demonstrates the high-frequency and high-power performance of the AlGaN/GaN HEMT devices with low-temperature metal-organic chemical vapor deposition
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Polycrystalline/Amorphous HfO2 Bilayer Structure as a Gate Dielectric for β-Ga2O3 MOS Capacitors IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-29 Jeong Yong Yang; Jiyeon Ma; Chan Ho Lee; Geonwook Yoo
We report the comparison of the atomic layer deposited polycrystalline (p-)/amorphous (a-) HfO 2 bilayer gate dielectric with p-HfO 2 /a-Al 2 O 3 for enhanced $\beta $ -Ga 2 O 3 metal oxide semiconductor capacitors (MOSCAPs). A discrepancy in the temperature-dependent hysteretic behaviors is observed, and thus, pulse capacitance–voltage ( ${C}$ – ${V}$ ) measurements are employed to investigate interface
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AlGaN/GaN-Based Laterally Gated High-Electron-Mobility Transistors With Optimized Linearity IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-01 Oğuz Odabaşı; Doğan Yılmaz; Erdem Aras; Kübra Elif Asan; Salahuddin Zafar; Büşra Çankaya Akoğlu; Bayram Bütün; Ekmel Özbay
In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions on source-access resistance and the linearity of laterally gated devices are investigated experimentally in detail for the first time. Transistors with different gate dimensions and conventional planar devices are fabricated using two-step electron
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Impact of the Ohmic Electrode on the Endurance of Oxide-Based Resistive Switching Memory IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-15 Stefan Wiefels; Moritz Von Witzleben; Michael Hüttemann; Ulrich Böttger; Rainer Waser; Stephan Menzel
As one of the key aspects in the reliability of redox-based resistive switching memories (ReRAMs), maximizing their endurance is of high relevance for industrial applications. The major limitation regarding endurance is considered the excessive generation of oxygen vacancies during cycling, which eventually leads to irreversible RESET failures. Thus, the endurance could be increased by using combinations
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TCAD-Based Flexible Fin Pitch Design for 3-nm Node 6T-SRAM Using Practical Source/Drain Patterning Scheme IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-29 Junjong Lee; Jun-Sik Yoon; Seunghwan Lee; Jinsu Jeong; Rock-Hyun Baek
In this article, we analyzed the stability, power, performance, and area of 6T-SRAMs using a promising scaling booster, i.e., source/drain patterning (SDP) scheme for the 3-nm technology node based on 3-D TCAD simulation. SDP scheme allows to decrease the spacing between transistors by downsizing the source/drain epitaxy. Proposed 5-nm and 3-nm SDP-SRAM (SDP-SRAM 5 and SDP-SRAM 3 ) are compared with
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Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-02 Shih-Kai Lin; Cheng-Hsien Wu; Ting-Chang Chang; Chen-Hsin Lien; Chih-Cheng Yang; Wen-Chung Chen; Chun-Chu Lin; Wei-Chen Huang; Yung-Fang Tan; Pei-Yu Wu; Yong-Ci Zhang; Li-Chuan Sun; Simon M. Sze
This study investigates an improvement in memory characteristics through depositing an In 2 O 3 layer as an oxygen ion reservoir in the switching layer (SL) of resistive random access memory (RRAM). The deposition of In 2 O 3 , denoted as Pt/HfO 2 /In 2 O 3 /TiN device, provides better memory characteristics including lower forming voltage ( ${V}_{F}$ ), set/reset voltage ( ${V}_{\mathrm {SET}}/{V}_{\mathrm
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Improved Retention Characteristics of Z2-FET Employing Half Back-Gate Control IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-03 S. Kwon; C. Navarro; F. Gamiz; P. Galy; S. Cristoloveanu; Y. -T. Kim; J. Ahn
The structure of zero impact ionization, zero subthreshold swing field-effect transistor (Z 2 -FET) has been modified by stacking a half side of back-gate (BG) with a heavily doped silicon layer instead of full covered BG. Through the modification, the memory window and retention time are significantly improved. For the modified Z 2 -FET, the retention time of “0”-state increases from $800~\mu \text{s}$
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Reducing Dynamism in DRAM With Bistable MEMS Switch as Sleep Transistor IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-26 Dhairya Singh Arya; Sushil Kumar; Manu Garg; Nikhil Chourasiya; Pushpapraj Singh
We demonstrate the bistable microelectromechanical system (MEMS) sleep-transistor for CMOS integrated circuits (ICs). The sleep transistor has infinite sleep mode resistance and ~2.5- $\Omega $ resistance in active mode. The hold bias in active mode is zero for the bistable MEMS sleep transistor. The proposed bistable MEMS switch is an ideal candidate for gating the power-hungry digital circuits. The
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Amorphous InGaZnO Thin-Film Transistors With Sub-10-nm Channel Thickness and Ultrascaled Channel Length IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-20 Subhranu Samanta; Kaizhen Han; Chen Sun; Chengkuan Wang; Annie Kumar; Aaron Voon-Yew Thean; Xiao Gong
We investigate the effect of channel layer thickness on effective mobility ( $\mu _{\text {eff}}$ ) in the sub-10-nm regime of amorphous indium–gallium–zinc–oxide thin-film transistors ( $\alpha $ -IGZO TFTs). TFT devices with extremely scaled channel thickness ${t} _{{\alpha}-{\text {IGZO}}}$ of 3.6 nm were realized, exhibiting low subthreshold swing (SS) of 74.4 mV/decade and the highest effective
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Formation of F-Doped Offset Region for Spray Pyrolyzed Self-Aligned Coplanar Amorphous Zinc–Tin–Oxide Thin-Film Transistor by NF₃ Plasma Treatment IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-26 Youn Goo Kim; Ravindra Naik Bukke; Jiseob Lee; Jewel Kumer Saha; Jin Jang
We report the high performance of self-aligned (SA), amorphous zinc–tin–oxide (a-ZTO) coplanar thin-film transistor (TFT) by spray pyrolysis. The a-ZTO thin film deposited by spray at 350 °C has a low surface roughness (0.39 nm) and no bubble. The resistivity of a-ZTO could be decreased to $2\times 10^{-3} \Omega $ cm by NF 3 plasma exposure and it was used for the offset regions of SA coplanar TFT
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Performance Improvement for Spray-Coated ZnO TFT by F Doping With Spray-Coated Zr–Al–O Gate Insulator IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-26 Jewel Kumer Saha; Arqum Ali; Ravindra Naik Bukke; Youn Goo Kim; Md Mobaidul Islam; Jin Jang
We report the fluorine (F) doping effect on zinc oxide (ZnO) thin-film transistor (TFT) fabricated by spray pyrolysis on spray-coated zirconia alumina oxide (ZAO) gate insulator. F doping was performed by NF 3 plasma treatment on ZnO thin film. The ZnO film shows ${C}$ -axis-aligned hexagonal structure, which remains unchanged by F doping. The photoluminescence (PL) spectra and X-ray photoelectron
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Flexible Complementary Oxide Thin-Film Transistor-Based Inverter With High Gain IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-28 Shu-Ming Hsu; Dung-Yue Su; Feng-Yu Tsai; Jian-Zhang Chen; I-Chun Cheng
Wearable bio-sensing devices are considered promising for ubiquitous heath monitoring. To accurately read out small bio-signals, the development of high-performance flexible front-end circuits is crucial. Oxide semiconductors are considered one of the most promising active channel materials for on-polymeric-foil electronics. In this article, a high-gain flexible complementary metal–oxide–semiconductor
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Enhancement-Mode Atomic-Layer-Deposited In2O3 Transistors With Maximum Drain Current of 2.2 A/mm at Drain Voltage of 0.7 V by Low-Temperature Annealing and Stability in Hydrogen Environment IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-29 Mengwei Si; Adam Charnas; Zehao Lin; Peide D. Ye
In this article, we demonstrate atomic-layer-deposited (ALD) indium oxide (In 2 O 3 ) transistors with a record high drain current of 2.2 A/mm at ${V}_{DS}$ of 0.7 V among oxide semiconductor transistors with the enhancement-mode operation. The impact of back-end-of-line (BEOL) compatible low-temperature annealing is systematically studied on these highly scaled In 2 O 3 transistors with channel length
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A Unified Degradation Model of Elevated-Metal Metal Oxide (EMMO) TFTs Under Positive Gate Bias With or Without an Illumination IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-08 Yinya Zhang; Zening Wang; Mingxiang Wang; Dongli Zhang; Huaisheng Wang; Man Wong
Degradations of elevated-metal metal oxide (EMMO) thin-film transistors (TFTs) under positive bias stress (PBS) and positive bias illumination stress (PBIS) are systematically investigated and compared. An intrinsic correlation between PBS and PBIS degradation is demonstrated. Continuous negative threshold voltage ( ${V}_{\text {th}}$ ) shift is observed under both stresses, with similar time-dependent
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Three-Terminal Floating-Gate Cell for Threshold-Voltage Control of Organic Thin-Film Transistors IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-20 Kareem Mansour; Samar Elsaegh; Ute Zschieschang; Hagen Klauk; Ghada H. Ibrahim
A floating-gate (FG) cell as a circuit-level approach to control the threshold voltage of organic thin-film transistors (TFTs) operated in the transdiode configuration is presented. Charging and discharging of the FG are achieved by controlling the charge leakage through the gate dielectric of one of the organic TFTs that constitute the FG cell. Using programming voltages not exceeding 4 V, systematic
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High-Responsivity Solar-Blind Ultraviolet Photodetectors Based on Carbon Nanodots/Graphene Hybrids IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-03 Yong Fang; Zhiwei Zhao; Mengru Zhu; Zhengjin Weng; Chao Fang; Xi Jia
The intrinsically poor optical absorption and short carrier lifetime of graphene have restricted its practical application in photodetectors. Carbon nanodots (CNDs) have received much attention due to their fascinating optical properties, environmentally friendly nature, small size, and superiority of a large optical absorptivity. Thus, in this article, a hybrid photodetector based on CNDs and graphene
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Yb/InSe/SiO₂/Au Straddling-Type Tunneling Devices Designed As Photosensors, MOS Capacitors, and Gigahertz Bandstop Filters IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-15 Latifah Hamad Khalid Alfhaid; A. F. Qasrawi; Sabah E. AlGarni
In this work, amorphous InSe thin films coated with 30–160-nm-thick SiO 2 are used as an active material to fabricate multifunctional devices. The ${n}$ -InSe/ ${p}$ -SiO 2 layers that are deposited onto ytterbium substrates are optically and electrically characterized. It was observed that the coating of SiO 2 nanosheets onto the surface of InSe enhances the light absorbability in the near-infrared
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A CMOS Photodetector for Direct Color Imaging IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-29 Yves Audet; Abdelhalim Bendali; Jean-Pierre David
A novel photodetector for imaging in the visible–near infrared range is investigated. Unlike currently used detectors, the proposed device does not require thin-film filters for spectral discrimination. Instead, the discrimination relies on the wavelength-dependent absorption property of semiconductor materials. The detector consists of a window exposing the silicon substrate to the electromagnetic
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A Sun-Tracking CMOS Image Sensor With Black-Sun Readout Scheme IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-28 Hyeon-June Kim
This article presents a black-sun readout scheme for CMOS image sensors (CISs) that utilizes the black-sun effect caused by a strong illumination condition. Based on the analysis of the black-sun phenomenon in CISs, the proposed CIS extracts the black-sun indication and its strength images while providing normal images without any degradation. By effectively utilizing the black-sun readout capability
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Modeling of Photovoltaic Solar Cell Based on CuSbS₂ Absorber for the Enhancement of Performance IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-20 Sadanand; D. K. Dwivedi
Research on photovoltaic solar cells has always been exciting due to its clean and green nature. However, the quest for alternative approaches to the design of highly efficient solar cells with optimal cost-efficiency ratios has also been progressing. CuSbS 2 -based ternary compound semiconductor is a promising candidate for the ultrathin film photovoltaic cell due to the high absorption coefficient
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Efficiency Enhancement of the CdS/CdTe Solar Nanostructured Cell Using Electron-Reflecting Layer IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-26 Dinesh Kumar Sharma; Shyam Krishnan N; Murugaiya Sridar Ilango; Sheela K Ramasesha
A novel nanopillar-based n-CdS/p-CdTe solar cell with p-CdZnTe electron-reflecting layer has been proposed. The proposed structure features a p-CdZnTe electron-reflecting layer at the anode electrode side of the device. Device simulation using TCAD device simulator SILVACO has shown that the open-circuit voltage ( ${V}_{oc}$ ) of the device can be improved without degrading the short circuit current
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FDTD-Based Optimization of Geometrical Parameters and Material Properties for GaAs-Truncated Nanopyramid Solar Cells IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-10 D. V. Prashant; D. P. Samajdar; Zahra Arefinia
Solar cells (SCs) based on semiconductor nanostructures with the distinctive potential of significant savings in material and effective control over light trapping and scattering processes provide a pathway to low-cost and high-efficiency next-generation SCs. To realize efficient light harvesting and reduced reflection and transmission loss of the nanostructures, the geometrical parameters and material
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Device Engineering Approach Toward Stable, Efficient, and Eco-Friendly Perovskite Solar Cell IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-15 Saurabh Kumar Pandey; Srest Somay
In the endeavors to achieve lead-free perovskite solar cells, antimony-based hybrid materials have been identified as a promising alternative to toxic lead perovskite due to its stability and unique optoelectronic properties. In this study, we have presented a comprehensive analysis of MA 3 Sb 2 I 9 -based solar cells through device optimization. Various device parameters, such as active layer thickness
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Asymmetric Au Electrodes-Induced Self-Powered Organic–Inorganic Perovskite Photodetectors IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-26 Keyang Zhao; Jianxiong Zou; Fanming Huang; Caifang Gao; Xiang Wang; Wenwu Li; Wei Tian; Yen-Fu Lin; Zhigao Hu; Junhao Chu
In general, self-powered photodetectors are tedious and costly. Here, high-performance self-powered visible photodetectors based on MAPbI 3 films were fabricated by using asymmetric Au electrodes. For this construction of photodetector, the illumination passing through the translucent MAPbI 3 film can reduce the Schottky barrier between the lower electrode and perovskite, and the Au particles doping
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The Characterization of Dye-Sensitized Solar Cell Modified by Reduced Graphene Oxide- and ZrO2-Doped TiO2 Nanofibers at Low Light Intensities IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-02 Yu-Hsun Nien; Hui-Hsuan Hsu; Zhen-Rong Yong; Geng-Ming Hu; Huang-Hua Chen; Manjunath Rangasamy; Jung-Chuan Chou; Po-Yu Kuo; Chih-Hsien Lai; Cheng-Chu Ko; Jun-Xiang Chang
In this study, we synthesized the titanium dioxide nanofibers (NFs) doped with ZrO 2 and reduced graphene oxide (rGO) to modify photoanode of dye-sensitized solar cells (DSSCs). Commercial titanium dioxide P25 was used as the compact layer coated on fluorine doped tin oxide coated glass (FTO) glass and then a layer, which was titanium dioxide P25 mixed with rGO- and ZrO 2 -doped TiO 2 nanofibers, was
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Investigation on Single Pulse Avalanche Failure of 1200-V SiC MOSFETs via Optimized Thermoelectric Simulation IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-20 Zhiqiang Bai; Xiaoyan Tang; Siliang Xie; Yanjing He; Hao Yuan; Qingwen Song; Yuming Zhang
The dynamic avalanche reliability of 1200-V silicon carbide (SiC) power metal-oxide semiconductor field-effect transistors (MOSFETs) is studied in this article. The unclamped inductive switching (UIS) tests are conducted to locate failure points. An optimized thermal network model with the definition of the material above the epitaxial layer is used to simulate the avalanche process of SiC MOSFETs
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A Compact Trench-Assisted Space-Modulated JTE Design for High-Voltage 4H-SiC Devices IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-14 T. Dai; L. Zhang; O. Vavasour; A. B. Renz; V. A. Shah; M. Antoniou; P. A. Mawby; P. M. Gammon
This article proposes a compact trench-assisted space-modulated junction termination extension (TSM-JTE) design for high-voltage 4H-silicon carbide (SiC) devices. In this design, trench structures are introduced into the JTE region to effectively split the termination region into three functional zones. The proposed termination structure is cost effective in terms of the chip area it occupies; for
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Fabrication of Dual-Barrier Planar Structure Diamond Schottky Diodes by Rapid Thermal Annealing IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-20 Juan Wang; Dan Zhao; Guoqing Shao; Zhangcheng Liu; Xiaohui Chang; Genqiang Chen; Wei Wang; Wenyang Yi; Kaiyue Wang; Hongxing Wang
Fabrication of dual-barrier planar (DBP) structure diamond Schottky barrier diodes (SBDs) with only Ni Schottky contact was carried out by rapid thermal annealing. Ni/Au narrow stripes were first patterned on $\text{p}^{-}$ layer and annealed at 550 °C to decrease Schottky barrier height and form low barrier contact. Then, Ni/Au Schottky electrodes were deposited on the window area between stripes
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Single-Mask Implantation-Free Technique Based on Aperture Density Modulation for Termination in High-Voltage SiC Thyristors IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-15 Hu Long; Hongyi Xu; Hengyu Wang; Na Ren; Qing Guo; Kuang Sheng
For the termination in high-voltage SiC thyristor, this article proposes a single-mask implantation-free solution named aperture density modulation technique. Using this technique, the etching profile on the epitaxial layer can be controlled by the aperture layout on the mask. Thus, it can directly form the smoothly tapered junction termination extension with customizable slope profile. The experiments
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Channel Properties of Ga₂O₃-on-SiC MOSFETs IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-26 Yibo Wang; Wenhui Xu; Genquan Han; Tiangui You; Fengwen Mu; Haodong Hu; Yan Liu; Xinchuang Zhang; Hao Huang; Tadatomo Suga; Xin Ou; Xiaohua Ma; Yue Hao
We report the characterization of the channel mobility properties of metal-oxide-semiconductor field-effect transistors (MOSFETs) on the heterogeneous $\beta $ -Ga 2 O 3 -on-SiC (GaOSiC) substrate fabricated by an ion-cutting process. The mobility of GaOSiC MOSFETs is significantly improved as the postannealing temperature of Ga 2 O 3 channel increases from 900 °C to 1200 °C. The GaOSiC transistor
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Tunable Electronic Trap Energy in Sol-Gel Processed Dielectrics IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-29 Sandip Mondal; Arvind Kumar
We demonstrate the electronic trap energy distribution ( $\Delta {E}_{IL}$ ) in the wide bandgap, nonconventional aluminum oxide phosphate (ALPO) dielectrics. The trap energy distribution has been measured by using the gate injection high-speed capacitance–voltage measurement technique and verified through conventional deep-level transient spectroscopy. The electronic trap energies in ALPO dielectrics
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Influence of Cu Doping in Si–Te-Based Chalcogenide Glasses and Thin Films: Electrical Switching, Morphological and Raman Studies IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-26 Diptoshi Roy; B. Tanujit; K. B. Jagannatha; S. Asokan; Chandasree Das
To understand the electrical switching behavior of Si 15 Te $_{85-{x}}$ Cu x ( $1\le {x} \le10$ ) series, ${I}$ – ${V}$ characterization has been performed on bulk as well as amorphous thin films of the as-prepared samples. Both the bulk glasses and amorphous thin films are found to manifest memory-type switching behavior. The threshold voltages of thin-film devices are found to be much lower than
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Low-Frequency Noise Analysis of the Optimized Post High-k Deposition Annealing in FinFET Technology IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-08 Wufeng Deng; Hui Yang; Dongping Wu
The optimized postdeposition annealing (PDA) of the high- ${k}$ metal gate is investigated for 1/ ${f}$ noise performance improvement in FinFET technology by using spike annealing (SPA) and SPA-combined millisecond flash annealing (MFLA) treatment. It demonstrates that the additional MFLA can significantly reduce the 1/ ${f}$ noise without device performance degradation. Based on the low-frequency
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Anomalous Behavior of Gate Current and TDDB Lifetime by Constant Voltage Stress in NO-Annealed SiC-MOSFETs IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-21 Eiichi Murakami; Mitsuo Okamoto
Silicon-carbide metal–oxide–semiconductor field-effect transistors (SiC-MOSFETs) are core devices for future power electronics. The factors limiting their automotive applications are currently under investigation. Postoxidation annealing in NO gas is a key technology to achieving high carrier mobility in SiC-MOSFETs. In this article, we study the NO annealing effects on time-dependent dielectric breakdown
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Quantitative Characterization of Ferroelectric/Dielectric Interface Traps by Pulse Measurements IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-02 Junkang Li; Mengwei Si; Yiming Qu; Xiao Lyu; Peide D. Ye
The ferroelectric (FE) polarization switching behavior in the HfZrO 2 (HZO) FE/dielectric (FE/DE) stack is investigated systematically by charge responses from pulse measurements. The trapped charge density at the FE/DE interface related with the FE polarization switching is found to be $1.2\,\times \,10^{14}$ cm −2 according to the leakage-current-assist polarization switching mechanism. Furthermore
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1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-24 Markus Müller; Philippe Dollfus; Michael Schröter
A two-valley formulation of 1-D drift-diffusion transport is presented that takes the coupling between the valleys into account via a new approximation for the nonlocal electric field. The proposed formulation is suitable for the simulation of III–V heterojunction bipolar transistors as opposed to formulations that employ the single electron gas approximation with a modified velocity-field model, which
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Temperature Dependence of Electron and Hole Impact Ionization Coefficients in GaN IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-08 Lina Cao; Zhongtao Zhu; Galen Harden; Hansheng Ye; Jingshan Wang; Anthony Hoffman; Patrick J. Fay
The temperature dependence of the electron and hole impact ionization coefficients in GaN has been investigated experimentally. Two types of p-i-n diodes grown on bulk GaN substrates have been fabricated and characterized, and the impact ionization coefficients for both electrons and holes have been extracted using the photomultiplication method. Both the electron and hole impact ionization coefficients
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The Effect of Shallow Trap Density on the Electrical Characteristics of an Organic Nonvolatile Memory Device Based on Eight-Hydroxyquinoline IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-14 Peng Zhang; Yun Guo; Keyang Cao; Mingdong Yi; Liya Huang; Wei Shi; Jintao Zhu; Wei Huang
An organic nonvolatile memory is proposed based on the synergistic effect of the (three-aminopropyl) triethoxysilane (APTES) self-assembled monolayer (SAM) and the polystyrene (PS):eight-hydroxyquinoline (8-HQ) blend layer, where 8-HQ is used to provide the trapping sites for the nonvolatile memory, and PS is used to form the matrix for 8-HQ in order to improve the memory property. In addition, the
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Fabrication of Glutathione-S-Transferase–ZnO Nanoconjugate Ensemble FET Device for Detection of Glutathione IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-28 Ujjwol Barman; Namami Goswami; Siddhartha Sankar Ghosh; Roy P. Paily
This article reports fabrication and characterization of field effect transistor (FET) device consisting of zinc oxide (ZnO) nanoparticle–glutathione-S-transferase (GST) composite channel for successful in vitro detection and quantification of glutathione (GSH) in solution and in cancerous cell. The functionalized channel layer is synthesized by means of electrostatic binding between ZnO nanoparticles
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Enhanced pH Sensitivity of AlGaN/GaN Ion-Sensitive Field-Effect Transistor by Recess Process and Ammonium Hydroxide Treatment IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-02 Yue He; Xiao Wang; Ji-Yu Zhou; Ting-Ting Wang; Meng-Ke Ren; Guo-Qiang Chen; Tao-Fei Pu; Xiao-Bo Li; Mao Jia; Yu-Yu Bu; Jin-Ping Ao
AlGaN/gallium nitride (GaN) ion-sensitive field-effect transistors (ISFETs) were fabricated as pH sensors. The sensitivity of the AlGaN/GaN ISFETs was evolved with gate recess process and ammonium hydroxide (NH 4 OH) treatment. By performing the gate recess process, the threshold voltage ( ${V}_{\text {T}}$ ) of the ISFET increased from −3.33 to −0.31 V and the maximum conductance ( ${G}_{\text {M}}$
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Pt-Decorated Graphene Gate AlGaN/GaN MIS-HEMT for Ultrahigh Sensitive Hydrogen Gas Detection IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-02 Jungho Ahn; Dahee Kim; Kyung-Ho Park; Geonwook Yoo; Junseok Heo
Hydrogen fuel has attracted significant attention as an alternative clean energy for hydrogen vehicles and household fuel systems and has been expected to be pervasive. Thus, compact, low-power, and highly sensitive hydrogen sensors capable of being embedded in Internet-of-Things devices are in demand. In this work, an ultrahigh sensitive hydrogen sensor operating at room temperature based on the Pt-decorated
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A Concentric Arc Meander Line Slow Wave Structure Applied on Low Voltage and High Efficiency Ka-Band TWT IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-14 Zheng Wen; Jirun Luo; Ying Li; Wei Guo; Min Zhu
A concentric arc meander line (CAML) slow wave structure (SWS) was proposed for applications on low voltage and high efficiency Ka -band traveling wave tube (TWT). Due to the CAML formed with a series of concentric arcs, the electric field in the radial direction may be more uniform, which may make the beam–wave interaction more sufficient and the electron efficiency improved. The metal shielding structure
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Frequency Multiplication in Planar Gyrotrons as a Method for Production of High-Power Multi-THz Radiation IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-20 Vladislav Yur’evich Zaslavsky; Ilya Zheleznov; Naum Ginzburg; Irina Zotova; Andrey Malkin; Alexander Sergeev
We propose a novel source of high-power 1–3-THz radiation based on frequency multiplication in a planar gyrotron, with transverse energy extraction. In such a scheme, it is possible to increase significantly the transverse size both of the cavity and of the electron beam, and, correspondingly, the output power at the fundamental harmonic. At the same time, equidistant mode spectrum of a cavity of planar
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Concept and Simulations of 800 MHz Two-Stage MBK for FCC IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-27 Vladimir E. Teryaev; Sergey V. Shchelkunov; Jay L. Hirshfield
Energy consumption is one of the major concerns when planning large-scale high energy accelerator projects such as the future circular collider (FCC) and similar accelerators. To address this problem, we will describe the concept and simulations of a 1.4 MW, 800 MHz two-stage multibeam klystron (TS MBK) having a high efficiency (~80%) and compact design.
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Accurate Gyrotron Performance Prediction Based on Full 3-D Magnetic Field and Electron Beam Information Altered by Nonideal Factors IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-02 Ingeun Lee; Ashwini Sawant; Jinwoo Shin; EunMi Choi
We improved the accuracy of gyrotron performance analysis using particle-in-cell (PIC) code. To accurately predict the performance of a device under development, an electron beam (e-beam) that has information that best represents realistic e-beam information should be used for a cavity simulation, and an investigation of factors that affect the e-beam information is necessary at the design stage. Thus
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A Novel Multipactor Suppression Circulator Using Transformation Dielectrics IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-29 Bin Li; Yun Li; Ming Yu; Jun Yang
Due to the multipactor discharge breakdown, ferrite circulators have become the most susceptible component losing efficacy in high-power applications such as satellite payload systems. To date, effective suppression method of multipactor without affecting the electrical performance while keeping a high level of stability during in-orbit operation is still a technological challenge. In this article
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Theoretical and Experimental Studies on the Asymmetric Mode Competition in an Overmoded Ka-Band Cerenkov Oscillator IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-02-03 Shuang Li; Changhua Chen; Yan Teng; Wenyuan Liu; Zhimin Song; Dongyang Wang; Jun Cheng; Lanpeng Qiang; Zhiqiang Fan; Zhaoyu Du
In the development of a Ka -band overmoded Cerenkov oscillator, the issue of asymmetric modes competition should be paid attention to as they can be potentially excited in the overmoded cavity and then affect the performance of device seriously. Based on the 3-D models, the influences of the structural parameter such as “ ldr ” on the resonance characteristics for the symmetric modes and the asymmetric
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Indirectly Heated Switch as a Platform for Nanosecond Probing of Phase Transition Properties in Chalcogenides IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-14 Nicolás Wainstein; Guy Ankonina; Timm Swoboda; Miguel Muñoz Rojo; Shahar Kvatinsky; Eilam Yalon
Although phase-change materials (PCMs) have been studied for more than 50 years, temperature-dependent characterization of the phase transition dynamics remains challenging due to the lack of nanosecond-nanoscale thermometry. In this article, we utilize the four-terminal, indirectly heated phase-change switch (IPCS), which was originally designed for nonvolatile radio frequency (RF) applications, as
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Study on the Roles of Charge Trapping and Fixed Charge on Subthreshold Characteristics of FeFETs IEEE Trans. Elect. Dev. (IF 2.913) Pub Date : 2021-01-18 C. Jin; C. J. Su; Y. J. Lee; P. J. Sung; T. Hiramoto; M. Kobayashi
Charge trapping (CT) and fixed charge (FC) are considered in the model of transient negative capacitance (TNC). The roles of CT and FC on subthreshold characteristics of ferroelectric FET (FeFET) are investigated by experiment and simulation. The simulation results show that both CT and FC can modulate the subthreshold characteristics of FeFET by shifting the operation point dynamically and statically
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