The breakdown voltage, ${V}_{{\text {BR}}}$ , of a superjunction whose pillar parameters, namely doping, length, and width, are optimized to yield the least specific ON-resistance, ${R}_{{\text {ONSP}}}$ , for the specified ${V}_{{\text {BR}}}$ , falls drastically for even small charge imbalances. Hence, a structure fabricated with these target parameter values often has a ${V} _{{\text {BR}}}$ much

A new low-capacitance clamp is introduced for high-voltage-tolerant and high-speed interface applications. An embedded stacking architecture is proposed to address latch-up-immune design requirements without degradation in the electrostatic discharge (ESD) stress-handling capability, leakage, or capacitance. Thanks to a parallel current conduction path activated during ESD stress, a state-of-the-art

In this article, the combined effect of BOX thickness ( ${T}_{\text {BOX}}$ ) and ground-plane (GP) doping ( ${N}_{\text {GP}}$ ) on channel carrier mobility and analog figures of merit (FoMs) is investigated. It is reported that the thin BOX along with higher ${N}_{\text {GP}}$ will limit the electron/hole mobility of ultrathin body and BOX fully depleted silicon-on-insulator (UTBB FD-SOI) MOS transistors

For structurally symmetric field-effect transistors with respect to the source and the drain, their models should be electrically symmetric about the source–drain interchange. This article shows that the commonly used drain–source voltage clamping technique breaks such a symmetry. This article then presents a symmetric source and drain voltage clamping scheme to solve the problem. The effectiveness

The proposition of integrating the 2-D materials and ferroelectric negative-capacitance MOSFETs (NCFETs) was expected to have excellent steep slope ${I}$ – ${V}$ characteristics due to the combined advantages of both ultrathin body channel material and negative-capacitance effect. Recent experiments demonstrated the excellent steep slope features of 2-D material NCFETs. Therefore, it was important

In this article, we investigate defect nucleation leading to device degradation in $\beta $ -Ga 2 O 3 Schottky barrier diodes by operating them inside a transmission electron microscope. Such in situ approach allows simultaneous visualization and quantitative device characterization, not possible with the current art of postmortem microscopy. High current density and associated mechanical and thermal

In this article, GaN/AlGaN metal–oxide–semiconductor high-electron-mobility field-effect transistors (MOSHEMTs) fabricated on high-resistivity Si (111) substrates have been evaluated using low-frequency (LF) noise measurement. The noise power spectral density (PSD) of devices with different lengths and channel orientations has been characterized in linear operation. No noticeable differences in the

This article deals with the characterization of charge trapping dynamics in a novel 100-nm double-heterojunction AlN/GaN/AlGaN-on-Si radio frequency (RF) HEMT process. In order to study the detrapping mechanisms, we perform the wideband acquisitions of the transient behavior by sweeping the pulsed voltages to cover the entire device operating area. The fast acquisition also enables the characterization

In the presence of prominent gate oxide trapping, the conventional technique for channel mobility extraction in MOSFETs based on ${I}$ – ${V}/{C}$ – ${V}$ measurements becomes inadequate. This is the consequence of two different effects associated with oxide traps: gate voltage stretch-out and electron trapping and detrapping in the oxide at the megahertz (MHz)-range frequencies that are commonly utilized

This article proposes a new approach for modeling self-heating in gallium nitride (GaN) high-electron-mobility transistors (HEMTs). The proposed approach utilizes two heat sources to model the effects of the relatively uniform heat generation when the device is in the linear regime and the concentrated heat generation in the high-field area after the device pinches off. Compared to traditional single

In this article, we propose an explicit and analytic charge-based model for estimating short-channel effects (SCEs) in GaN high-electron-mobility transistor (HEMT) devices. The proposed model is derived from the physical charge-based core of the École Polytechnique Fédérale de Lausanne (EPFL) HEMT model, which treats HEMT as a generalized MOSFET. The main emphasis of this article is to estimate SCEs

We developed a compact model for program transient simulation of 3-D charge-trap NAND flash on a bitline (BL) string level. By implanting the trapped charge parameters and the solutions obtained from modified 1-D Poisson equation into our unit cell model, we suggest that our model shows better accuracy compared to the existing model. After fitting the measured incremental step pulse programming (ISPP)

To increase the density of magnetoresistive random access memory (MRAM) beyond the 1T1MTJ MRAM cell in use today, the design space for 1S1MTJ MRAM array is analyzed by cooptimizing both selectors and MTJs. Current low-resistance MTJs for 1T1MTJ MRAM are not suitable for 1S1MTJ MRAM. Threshold-type selectors would induce a strong read disturb on the MTJ due to the snapback voltage ( ${V}_{\mathrm {TH}}$

Memristor-aided logic (MAGIC) is a technique for performing in-memory computing using memristive devices. The design of a MAGIC NOR gate has been described in detail, and it serves as the basic building block for several processing-in-memory architectures. However, the input stability of the MAGIC NOR gate forces a limitation on the threshold voltages: the magnitude of the set voltage must be higher

In this article, a single-layer complementary latch (CL) and one multilayer CL which are fully compatible with standard FinFET CMOS processes are characterized and their applications are extensively discussed. Through the complementary pair with the 3-D stackable twin-bit resistive random-access memory (RRAM) which consists of a TaON-based resistive film, the CLs feature great area efficiency and stable

The quality and stability of thin-film transistors (TFTs) applied to large-scale displays are crucial to their successful manufacture and commercial applicability. This article introduces a TFT manufacturing process in which the source/drain system is defined by hydrogen doping in the dielectric layer of the top-gate amorphous indium gallium zinc oxide (a-IGZO). A size effect related to this system

Ga-doped ZnO (GZO) thin-film transistors (TFTs) with different doping concentrations ( ${n}_{Ga}$ : ${n}_{Zn} =0$ , 1:150, 1:75, 1:50) were successfully fabricated by atomic layer deposition. Among them, GZO TFTs with the doping concentration of 1:75 exhibited a high field-effect mobility of 16.2 cm 2 V −1 s −1 , a small subthreshold swing of 0.22 V dec −1 , a high ON-/ OFF-current ratio of 10 7 ,

In this article, the atmospheric pressure plasma (APP) treatment method is proposed to solve the instability problem under a long-term electrical bias stress through the semiconductor surface treatment without degrading the excellent electrical characteristics of oxide thin-film transistors (TFTs). The high-energy oxygen radicals produced by the APP without a vacuum system affect the electrical properties

In this article, the steady and transient characteristics of the light-stimulated synaptic transistor based on amorphous indium–gallium–zinc oxide thin film are investigated. An optoelectronic trap charge model with steady and transient methods is employed to simulate the properties of such a neuromorphic device. The device simulation results agree well with the experimental data detected from the

Electrolyte-gated thin-film transistors (EGTs) with indium oxide channel, and expected lifetime of three months, enable low-voltage operation (~1 V) in the field of printed electronics (PEs). The channel width of our printed EGTs is varied between 200 and 1000 $\mu \text {m}$ , whereas a channel length between 10 and 100 $\mu \text {m}$ is used. Due to the lack of uniform performance p-type metal oxide

We report a comprehensive study on the impact of source-to-gate ( ${L}_{S}$ ) and drain-to-gate ( ${L}_{D}$ ) overlap lengths on the performance of amorphous indium–gallium–zinc–oxide (a-IGZO) thin-film transistors (TFTs) employing the inverted staggered structure with an etch stopper (ES). Although drain current ( ${I}_{D}$ ) is found to marginally decrease with increasing ${L}_{S}$ , it is found

To overcome the environment susceptibility of flexible amorphous InSnZnO (a-ITZO) thin-film transistors (TFTs), a surface passivation method utilizing ${n}$ -octyltriethoxysilane (OTES) self-assembled monolayers (SAMs) is developed. The electrical characteristics of the developed transistors indicate that device performance can be enhanced upon OTES passivation, exhibiting high mobility (~19.4 cm 2

The extent of the poly-silicon crystalline protrusion, a result of differences in excimer laser annealing (ELA), affects the performance and reliability of thin-film transistors (TFTs). This study investigates the degradation mechanism of the low-temperature polycrystalline silicon (LTPS) TFT devices with differences in crystalline protrusion under self-heating stress (SHS). Higher ELA energy will

Describing the dependence of both signal propagation delay and pixel charging time on display specifications and device parameters, a timing model and a combined coordinate system for its convenient visualization are developed for an active-matrix display. Presented also is an algorithm developed to optimally determine the width of the interconnects and that of the address transistor for maximizing

The calculation methods of the modulation transfer function (MTF) infrared (IR) focal plane arrays (FPAs) on the base of photodiodes are presented. The obtained results are based on the preliminary calculations of the areal distribution of quantum efficiency by modeling the 3-D diffusion process of photogenerated charge carriers in the photosensitive layer of IR FPA by the Monte Carlo method. The analysis

In this article, we developed a color converter of phosphor–AlN–sapphire (PAS) plate to enhance the heat dissipation of phosphor film in high-power white light-emitting diodes (WLEDs). The improved heat dissipation performance is observed by introducing the AlN film with high thermal conductivity (TC), which was demonstrated by finite-element analysis (FEA) simulation. The proposed PAS plate was prepared

This article concerns the problem of light-emitting diode (LED) compact thermal modeling. The methods currently used to generate such models either require some proprietary information from a device manufacturer or the resulting model element values that do not have any physical interpretation. The methodology proposed in this article allows the generation of compact thermal models based only on measurements

The sensitive detection of low-dose X-ray radiation is essential to many X-ray applications. In this article, the ultrasensitive X-ray detector based on pure Cs 2 AgBiBr 6 all-inorganic lead-free perovskite film is successfully demonstrated and encapsulated using a metal casing with a Be window. The high-quality Cs 2 AgBiBr 6 films are obtained through the low-cost solution process with long electron–hole

Solar-blind photodetectors have received increasing attention due to their widely applications in military and civil aspects. However, most of the photodetectors exhibit low detection ability for weak ultraviolet light signal, and the forewarning of weak ultraviolet radiation is important for the immune system of humans. Herein, the self-powered photodetector based on $\beta $ -Ga 2 O 3 /NiO heterojunction

This article concerns the temperature dependence of low-frequency noise measured in the temperature range of 77–300 K in InAs/InAsSb superlattice photoconductors optimized for long-wavelength infrared (LWIR) and very long-wavelength infrared (VLWIR) spectral range. The differences in the T-dependence and the magnitude of 1/f noise, observed for LWIR and VLWIR photoconductors, are connected with different

Photodetection at a wavelength of about 1060 nm is very important for applications including medical imaging, optical communication, and light detection and ranging. In this article, a self-powered near-infrared light detector with a narrowband at around 1060 nm is realized based on a simple Si Schottky structure, in which the Ohmic and Schottky electrodes are configured on the front and rear surfaces

We report an ambipolar phototransistor using the organic–inorganic hybrid perovskite, CH 3 NH 3 PbI 3 [methylammonium lead iodide (MAPbI 3 )]. The high iconicity of MAPbI 3 leads to intrinsic p-type and n-type self-doping, which enables simultaneous or selective hole and/or electron transport in a single device, depending on the bias conditions. Under white light illumination, both hole and electron

In this article, for the first time, a hybrid plasmonic (HP) ring resonator uni-traveling carrier pin-photodetector was numerically presented that offers a high responsivity of 0.68 A/W, a high bandwidth of over 125 GHz, and low footprint. This device has the capability of monolithic integration with HP-passive devices on the InP platform at an optical communication wavelength of 1550 nm.

Ge $_{{1}-{x}}$ Sn x alloy films with Sn contents of 3% and 10% were grown on Si wafers by low-temperature nonequilibrium molecular beam epitaxy. The thermostabilities of the GeSn films and photodetectors containing them were studied. No Sn segregation was observed in Ge 0.97 Sn 0.03 films annealed below 750 °C. Conversely, Sn segregation occurred and Sn nanoparticles formed within the Ge 0.90 Sn 0

Design, simulation, fabrication, and measurement have been performed using a new method for obtaining high-speed p-i-n germanium photodiodes for use in backside imaging arrays. These devices are proof-of-principal in situ -doped vertical mesa structures fabricated using single-wafer, atmospheric-pressure chemical vapor deposition (APCVD) homoepitaxy on Czochralski-grown Ge substrates. Excellent impurity

4H-SiC Schottky photodetector array was fabricated by pulsed dc sputter deposition of palladium thin film as UV semitransparent Schottky contact on active pixel. Results of electro-optical characterization of these devices as a function of temperature varying from 33 to 393 K are presented. A peak spectral responsivity of 122 mAW −1 at 280 nm is observed. Further, spatial response uniformity for a

In this work, ultraviolet (UV) 4H-SiC avalanche photodiodes (APDs) with a diameter of $\mu \text{m}$ were fabricated and investigated. The impact of resistance on the performance of 4H-SiC APDs was analyzed both in linear and Geiger modes. The optical response time of the fabricated APD devices in linear mode was measured with various load resistances, whereas the single photon counting performance

We present an interesting transient effect found in silicon-on-insulator (SOI) transistors, where the drain current responds slowly to a back-gate voltage ( ${V}_{\text {BG}}$ ) pulse. This transient mechanism is due to the deep-depletion region in the SOI substrate induced by the ${V}_{\text {BG}}$ pulse and has been validated by experimental and TCAD simulation results. The deep-depletion characteristic

A new structure in trench-gate insulated gate bipolar transistor (IGBT) design is proposed and analyzed not only for power loss reduction but also for long-term stability and suppressing electromagnetic interference (EMI) noise using a device simulation. Although turn-off loss and ON-state voltage drop ${V}_{\text {ce(sat)}}$ are improved by injection enhancement (IE) effect, IE effect causes dynamic

This article introduces an innovative approach that describes the drain–source current improvements of MOS transistors. It is based on the geometrical modification of MOSFET’s channel from a rectangular layout shape (RLS) into a diamond layout shape (DLS). In this way, the drain–source current enhancement is increased up to 11% for the DLS MOS transistors with an effective aspect ratio ( ${W}/\textit

The electrical behavior of lateral 4H-SiC n-laterally-diffused metal-oxide semiconductor (LDMOS) transistors with reduced surface field (RESURF) for integrated circuits was designed, measured, and modeled using different design variations. An additional implanted n-layer forming the drift region of the device in a p-doped epitaxy promotes a RESURF and thereby enhances the breakdown capability. The

A new gate structure in the trench-gate insulated-gate bipolar transistor (IGBT) design is proposed and analyzed for power-loss reduction and the suppression of electromagnetic-interference (EMI) noise. Although the turn-off loss and the ON-state voltage drop ${V}_{\text {ce(sat)}}$ are improved by the injection-enhancement (IE) effect, the IE effect caused dynamic avalanche that limits the turn-off

This article discusses the robustness of field-plate-assisted reduced surface field effect (RESURF) DMOS designs to time-dependent latch-up within a single dielectrically isolated device. This work individually characterizes the dopant defined parasitic bipolar parallel to all MOS and uniquely describes the existence of another parasitic bipolar of opposite polarity through the generation of a backgate

In this article, we investigate a novel optimized 4H-SiC U-shaped trench-gate MOSFET (UMOSFET) structure, which features an electric field modulation region below the P-body. This region consists of a p-type region and an n-type region, while the p-type region is wrapped by the n-type region. We use the p-type region to reduce the electric field at the P+ shielding layer and the gate oxide. The reduced

In this article, Si (100) inks’ array is integrated on SiN/AlGaN/GaN substrate to demonstrate a zero deviation and wafer-scale Si–GaN monolithic integration by transfer printing and self-aligned etching technology. During the heterogeneous integration process, it does not depend on any equipment, such as metal–organic chemical vapor deposition (MOCVD) (epitaxial growth) and wafer bonding machine (wafer

This article reports the fabrication of zinc-oxide (ZnO) single-nanowire (SNW)-based back-to-back Schottky diodes (BBSDs) using microcantilever-printed AgNP contact pads. ZnO SNWs have been placed on a SiO 2 /Si surface by dropcasting an optimized dispersion of ZnO nanowires (NWs) in deionized (DI) water. The microcantilever-printing process has been used to overlap the surface of the ZnO NW with the

Characterizing mixed hot-carrier/bias temperature instability (BTI) degradation in full { $\textit {V}_{\text{G}}$ , $\textit {V}_{\text{D}}$ } bias space is a challenging task. Therefore, studies usually focus on individual degradation mechanisms, such as BTI and hot-carrier degradation (HCD). However, a simple superposition of these mechanisms at an arbitrary { $\textit {V}_{\text{G}}$ , $\textit

We discuss the fundamental aspects of how discrete impurities could be physically modeled under the framework of the drift–diffusion (DD) simulations. The detailed physical interpretations of potential fluctuations, impurity-limited mobility, and an appropriate modeling to represent the discrete nature of impurities are explained. The present analyses are validated by DD simulations with various types

Heavily doped 4H-silicon carbide (SiC) epitaxial p-n junction diodes are fabricated, and their tunneling current under reverse-biased condition is investigated. Soft increase of the leakage current before avalanche breakdown is observed in the diodes with heavy reduced doping concentration. The temperature and electric field strength dependencies of the leakage current reveal that the leakage current

For resistive RAM (RRAM)-based deep neural network (DNN), random telegraph noise (RTN) causes accuracy loss during inference. In this article, we systematically investigated the impact of RTN on the complex DNNs with different data sets. By using eight mainstream DNNs and four data sets, we explored the origin that caused the RTN-induced accuracy loss. Based on the understanding, for the first time

Engineering oxide interfaces with defined electronic band structures is of vital importance for designing all-oxide devices with controllable multifunctionality and improved performance. Here, we report the band alignment, band bending, and transport mechanism in the NiO/ $\beta $ -Ga 2 O 3 p-n heterojunction (HJ) which exhibits high performances with a rectification ratio over 10 11 , a turn-on voltage

This article investigates the stability of hydrogenated amorphous silicon (a-Si:H) p-i-n junctions employed as temperature sensors in lab-on-chip (LoC) applications. The devices have been tested under forward current injection and different temperatures (from room temperature up to 90 °C) in order to reproduce the practical operating conditions. Two sets of devices with different diborane concentrations

Gallium nitride (GaN) is a compound semiconductor which has advantages to generate new functionalities and applications due to its piezoelectric, pyroelectric, and piezo-resistive properties. Recently, surface acoustic wave (SAW)-based acoustic tweezers were developed as an efficient and versatile tool to manipulate nano- and microparticles aiming for patterning, separating, and mixing biological and

The RF power production efficiency is one of the major concerns in the 3-TeV Compact Linear Collider (CLIC) Drive Beam Accelerator, as it is responsible for almost 50% of the entire accelerator complex power consumption. The klystron technology with dc post acceleration of the prebunched beam was reconsidered recently, as an attempt to develop a technological solution for the high efficiency, high

The coaxial interaction structure for a 0.24-THz, 2-MW gyrotron is designed, and its RF behavior is analyzed for the beam current of 60 A and the beam voltage of 90 kV. The searching of a suitable, very high-order TE mode, which satisfies all the technical conditions required to generate 2-MW RF power, is an important and critical step in the development of a coaxial-cavity (COCA) gyrotron. The detailed

We demonstrate high-density (1- $\mu \text{m}$ pitch) silicon field-ionization arrays (FIAs) with self-aligned gate apertures (350 nm in diameter) and integrated nanowire current regulators. Our FIAs achieved high field factors (>0.1 nm −1 ) and significantly lower ionization voltages (<100 V) than the devices with lower tip densities previously reported. Ion currents were measured in argon, deuterium

A multitube configuration for a gyrotron traveling-wave amplifier (gyro-TWA) that is based on the use of one multibeam electron gun and several parallel helically corrugated interaction waveguides operating with axis-encircling-like electron beamlets at the second cyclotron harmonic is proposed. This new gyro-TWA concept, similar to that for multibeam or clustered linear-beam klystrons, can provide

Deep-ultraviolet (DUV) light ranging from 200 to 280 nm, that is, a solar-blind region, has been widely applied to water purification, sterilization, and integrated biosensors. As the light source for nonline-of-sight (NLOS) communication, DUV light has the natural advantage of a negligible background due to strong ozone absorption. However, the existing DUV sources suffer from either low power or

A backward wave oscillator (BWO) based on a double-staggered grating (DSG) slow wave structure (SWS) is investigated as a high-power wideband terahertz (THz) source, driven by a sheet electron beam emitting from a pseudospark plasma cathode. First, the DSG SWS is optimized in simulation to have a suitable dispersion characteristic. Then, the BWO with a wideband output structure consisting of a tapered

This article proposes a nanoscale complementary metal–oxide–semiconductor (CMOS) current reference design for low power analog and digital devices. A self-biased circuit is developed within the current reference. The current reference can compensate for temperature changes and voltage fluctuations. Simulation results showed a low current around 12 nA. The design is capable of working in a broad range