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Provides a listing of current staff, committee members and society officers.

In this article, the interfacial properties of nMOSFETs with different thickness high- $\kappa $ Al 2 O 3 capping layer on an 8-nm SiO 2 and TiN gate stacks have been investigated using electrical measurement and low-frequency noise at room temperature. It is shown that the predominant 1/ ${f}$ noise is governed by the number fluctuations mechanism. It is indicated that: 1) presence of an Al 2 O 3

The objective of the present study is to analyze the heat transfer in the gate-all-around (GAA) MOSFETs based on the Cattaneo and Vernotte (CV) model due to the finite heat propagation speed in these nanodevices. The derivation of the CV model from the Boltzmann transport equation (BTE) is presented. Using the finite-element method, the nonlinear heat conduction model coupled with Poisson and continuity

This article investigates the influence of resistive protective oxide (RPO) layer density and hot carrier stress (HCS) degradation in n-channel lateral diffused silicon-on-insulator metal–oxide–semiconductor field-effect transistors. At the beginning of HCS at a higher gate voltage ( ${V}_{G}$ ), the threshold voltage shifts and subthreshold swing increase, but the ON-state current will still increase

3-D-TCAD results are presented showing current density profiles for triggered GGNmosts with substantial, and with minimal, drain ballast resistance. That same variation is repeated on two more GGNmosts with reduced source ballast resistance, which reduces the electron–hole current ratio. The simulated current density profiles fill only part of the device, while in the complementary part of the device

We propose an experimentally validated physics-based process-induced variability (PIV) aware SPICE simulation framework–enabling the estimation of performance variation due to line-edge-roughness (LER), metal-gate-granularity (MGG), random-dopant-fluctuation (RDF), and oxide-thickness-variation (OTV) at sub-20 nm technology node devices. The framework utilizes LER, RDF, OTV, and MGG defining parameters

An analytical thermal model to predict the peak temperature in silicon-on-insulator (SOI)-FinFET-like structures is proposed. The device is divided into two regions based on two separate heat flow paths and each region is analyzed and modeled independently to estimate the corresponding peak temperature. Later both the models are combined to obtain the peak temperature for the device. The temperature

This investigation examines the physical mechanisms that can increase the variability of both p-n junctions and silicon–germanium heterojunction bipolar transistors (SiGe HBTs) at cryogenic temperatures. The important operative mechanisms responsible for device parameter variability include bandgap narrowing due to heavy doping, mechanical stress, and the Ge profile. The impact of direct tunneling

Device surface properties are critical for its performance such as channel electron density, leakage current, subthreshold swing (SS), and noise in gallium nitride high-electron-mobility transistors (HEMTs). In this article, the improved surface property of InAlN/GaN HEMTs with forming gas (FG, 5% H 2 , and 95% N 2 ) annealing is demonstrated. X-ray photoelectron spectra (XPS) show that the number

In this work, we demonstrate the degradation behavior and physical mechanism of AlGaN/GaN high-electron-mobility transistors (HEMTs) under hot-electron stress in hydrogen and nitrogen atmosphere. According to the monitoring results, the trends of ${I}_{\text {ds}}$ values are completely different during the same hot-electron stress in two types of atmosphere. The ${I}_{\text {ds}}$ values of the devices

Low-resistance ohmic contacts in AlGaN/GaN high-electron-mobility transistor (HEMT) devices require high-temperature (HT) annealing (> 800 °C) which can deteriorate material quality, surface morphology, and edge acuity of the metal stacks. This article demonstrates the high-frequency and high-power performance of the AlGaN/GaN HEMT devices with low-temperature metal-organic chemical vapor deposition

We report the comparison of the atomic layer deposited polycrystalline (p-)/amorphous (a-) HfO 2 bilayer gate dielectric with p-HfO 2 /a-Al 2 O 3 for enhanced $\beta $ -Ga 2 O 3 metal oxide semiconductor capacitors (MOSCAPs). A discrepancy in the temperature-dependent hysteretic behaviors is observed, and thus, pulse capacitance–voltage ( ${C}$ – ${V}$ ) measurements are employed to investigate interface

In this work, highly linear AlGaN/GaN laterally gated (or buried gate) high-electron-mobility transistors (HEMTs) are reported. The effect of gate dimensions on source-access resistance and the linearity of laterally gated devices are investigated experimentally in detail for the first time. Transistors with different gate dimensions and conventional planar devices are fabricated using two-step electron

As one of the key aspects in the reliability of redox-based resistive switching memories (ReRAMs), maximizing their endurance is of high relevance for industrial applications. The major limitation regarding endurance is considered the excessive generation of oxygen vacancies during cycling, which eventually leads to irreversible RESET failures. Thus, the endurance could be increased by using combinations

In this article, we analyzed the stability, power, performance, and area of 6T-SRAMs using a promising scaling booster, i.e., source/drain patterning (SDP) scheme for the 3-nm technology node based on 3-D TCAD simulation. SDP scheme allows to decrease the spacing between transistors by downsizing the source/drain epitaxy. Proposed 5-nm and 3-nm SDP-SRAM (SDP-SRAM 5 and SDP-SRAM 3 ) are compared with

This study investigates an improvement in memory characteristics through depositing an In 2 O 3 layer as an oxygen ion reservoir in the switching layer (SL) of resistive random access memory (RRAM). The deposition of In 2 O 3 , denoted as Pt/HfO 2 /In 2 O 3 /TiN device, provides better memory characteristics including lower forming voltage ( ${V}_{F}$ ), set/reset voltage ( ${V}_{\mathrm {SET}}/{V}_{\mathrm

The structure of zero impact ionization, zero subthreshold swing field-effect transistor (Z 2 -FET) has been modified by stacking a half side of back-gate (BG) with a heavily doped silicon layer instead of full covered BG. Through the modification, the memory window and retention time are significantly improved. For the modified Z 2 -FET, the retention time of “0”-state increases from $800~\mu \text{s}$

We demonstrate the bistable microelectromechanical system (MEMS) sleep-transistor for CMOS integrated circuits (ICs). The sleep transistor has infinite sleep mode resistance and ~2.5- $\Omega $ resistance in active mode. The hold bias in active mode is zero for the bistable MEMS sleep transistor. The proposed bistable MEMS switch is an ideal candidate for gating the power-hungry digital circuits. The

We investigate the effect of channel layer thickness on effective mobility ( $\mu _{\text {eff}}$ ) in the sub-10-nm regime of amorphous indium–gallium–zinc–oxide thin-film transistors ( $\alpha $ -IGZO TFTs). TFT devices with extremely scaled channel thickness ${t} _{{\alpha}-{\text {IGZO}}}$ of 3.6 nm were realized, exhibiting low subthreshold swing (SS) of 74.4 mV/decade and the highest effective

We report the high performance of self-aligned (SA), amorphous zinc–tin–oxide (a-ZTO) coplanar thin-film transistor (TFT) by spray pyrolysis. The a-ZTO thin film deposited by spray at 350 °C has a low surface roughness (0.39 nm) and no bubble. The resistivity of a-ZTO could be decreased to $2\times 10^{-3} \Omega $ cm by NF 3 plasma exposure and it was used for the offset regions of SA coplanar TFT

We report the fluorine (F) doping effect on zinc oxide (ZnO) thin-film transistor (TFT) fabricated by spray pyrolysis on spray-coated zirconia alumina oxide (ZAO) gate insulator. F doping was performed by NF 3 plasma treatment on ZnO thin film. The ZnO film shows ${C}$ -axis-aligned hexagonal structure, which remains unchanged by F doping. The photoluminescence (PL) spectra and X-ray photoelectron

Wearable bio-sensing devices are considered promising for ubiquitous heath monitoring. To accurately read out small bio-signals, the development of high-performance flexible front-end circuits is crucial. Oxide semiconductors are considered one of the most promising active channel materials for on-polymeric-foil electronics. In this article, a high-gain flexible complementary metal–oxide–semiconductor

In this article, we demonstrate atomic-layer-deposited (ALD) indium oxide (In 2 O 3 ) transistors with a record high drain current of 2.2 A/mm at ${V}_{DS}$ of 0.7 V among oxide semiconductor transistors with the enhancement-mode operation. The impact of back-end-of-line (BEOL) compatible low-temperature annealing is systematically studied on these highly scaled In 2 O 3 transistors with channel length

Degradations of elevated-metal metal oxide (EMMO) thin-film transistors (TFTs) under positive bias stress (PBS) and positive bias illumination stress (PBIS) are systematically investigated and compared. An intrinsic correlation between PBS and PBIS degradation is demonstrated. Continuous negative threshold voltage ( ${V}_{\text {th}}$ ) shift is observed under both stresses, with similar time-dependent

A floating-gate (FG) cell as a circuit-level approach to control the threshold voltage of organic thin-film transistors (TFTs) operated in the transdiode configuration is presented. Charging and discharging of the FG are achieved by controlling the charge leakage through the gate dielectric of one of the organic TFTs that constitute the FG cell. Using programming voltages not exceeding 4 V, systematic

The intrinsically poor optical absorption and short carrier lifetime of graphene have restricted its practical application in photodetectors. Carbon nanodots (CNDs) have received much attention due to their fascinating optical properties, environmentally friendly nature, small size, and superiority of a large optical absorptivity. Thus, in this article, a hybrid photodetector based on CNDs and graphene

In this work, amorphous InSe thin films coated with 30–160-nm-thick SiO 2 are used as an active material to fabricate multifunctional devices. The ${n}$ -InSe/ ${p}$ -SiO 2 layers that are deposited onto ytterbium substrates are optically and electrically characterized. It was observed that the coating of SiO 2 nanosheets onto the surface of InSe enhances the light absorbability in the near-infrared

A novel photodetector for imaging in the visible–near infrared range is investigated. Unlike currently used detectors, the proposed device does not require thin-film filters for spectral discrimination. Instead, the discrimination relies on the wavelength-dependent absorption property of semiconductor materials. The detector consists of a window exposing the silicon substrate to the electromagnetic

This article presents a black-sun readout scheme for CMOS image sensors (CISs) that utilizes the black-sun effect caused by a strong illumination condition. Based on the analysis of the black-sun phenomenon in CISs, the proposed CIS extracts the black-sun indication and its strength images while providing normal images without any degradation. By effectively utilizing the black-sun readout capability

Research on photovoltaic solar cells has always been exciting due to its clean and green nature. However, the quest for alternative approaches to the design of highly efficient solar cells with optimal cost-efficiency ratios has also been progressing. CuSbS 2 -based ternary compound semiconductor is a promising candidate for the ultrathin film photovoltaic cell due to the high absorption coefficient

A novel nanopillar-based n-CdS/p-CdTe solar cell with p-CdZnTe electron-reflecting layer has been proposed. The proposed structure features a p-CdZnTe electron-reflecting layer at the anode electrode side of the device. Device simulation using TCAD device simulator SILVACO has shown that the open-circuit voltage ( ${V}_{oc}$ ) of the device can be improved without degrading the short circuit current

Solar cells (SCs) based on semiconductor nanostructures with the distinctive potential of significant savings in material and effective control over light trapping and scattering processes provide a pathway to low-cost and high-efficiency next-generation SCs. To realize efficient light harvesting and reduced reflection and transmission loss of the nanostructures, the geometrical parameters and material

In the endeavors to achieve lead-free perovskite solar cells, antimony-based hybrid materials have been identified as a promising alternative to toxic lead perovskite due to its stability and unique optoelectronic properties. In this study, we have presented a comprehensive analysis of MA 3 Sb 2 I 9 -based solar cells through device optimization. Various device parameters, such as active layer thickness

In general, self-powered photodetectors are tedious and costly. Here, high-performance self-powered visible photodetectors based on MAPbI 3 films were fabricated by using asymmetric Au electrodes. For this construction of photodetector, the illumination passing through the translucent MAPbI 3 film can reduce the Schottky barrier between the lower electrode and perovskite, and the Au particles doping

In this study, we synthesized the titanium dioxide nanofibers (NFs) doped with ZrO 2 and reduced graphene oxide (rGO) to modify photoanode of dye-sensitized solar cells (DSSCs). Commercial titanium dioxide P25 was used as the compact layer coated on fluorine doped tin oxide coated glass (FTO) glass and then a layer, which was titanium dioxide P25 mixed with rGO- and ZrO 2 -doped TiO 2 nanofibers, was

The dynamic avalanche reliability of 1200-V silicon carbide (SiC) power metal-oxide semiconductor field-effect transistors (MOSFETs) is studied in this article. The unclamped inductive switching (UIS) tests are conducted to locate failure points. An optimized thermal network model with the definition of the material above the epitaxial layer is used to simulate the avalanche process of SiC MOSFETs

This article proposes a compact trench-assisted space-modulated junction termination extension (TSM-JTE) design for high-voltage 4H-silicon carbide (SiC) devices. In this design, trench structures are introduced into the JTE region to effectively split the termination region into three functional zones. The proposed termination structure is cost effective in terms of the chip area it occupies; for

Fabrication of dual-barrier planar (DBP) structure diamond Schottky barrier diodes (SBDs) with only Ni Schottky contact was carried out by rapid thermal annealing. Ni/Au narrow stripes were first patterned on $\text{p}^{-}$ layer and annealed at 550 °C to decrease Schottky barrier height and form low barrier contact. Then, Ni/Au Schottky electrodes were deposited on the window area between stripes

For the termination in high-voltage SiC thyristor, this article proposes a single-mask implantation-free solution named aperture density modulation technique. Using this technique, the etching profile on the epitaxial layer can be controlled by the aperture layout on the mask. Thus, it can directly form the smoothly tapered junction termination extension with customizable slope profile. The experiments

We report the characterization of the channel mobility properties of metal-oxide-semiconductor field-effect transistors (MOSFETs) on the heterogeneous $\beta $ -Ga 2 O 3 -on-SiC (GaOSiC) substrate fabricated by an ion-cutting process. The mobility of GaOSiC MOSFETs is significantly improved as the postannealing temperature of Ga 2 O 3 channel increases from 900 °C to 1200 °C. The GaOSiC transistor

We demonstrate the electronic trap energy distribution ( $\Delta {E}_{IL}$ ) in the wide bandgap, nonconventional aluminum oxide phosphate (ALPO) dielectrics. The trap energy distribution has been measured by using the gate injection high-speed capacitance–voltage measurement technique and verified through conventional deep-level transient spectroscopy. The electronic trap energies in ALPO dielectrics

To understand the electrical switching behavior of Si 15 Te $_{85-{x}}$ Cu x ( $1\le {x} \le10$ ) series, ${I}$ – ${V}$ characterization has been performed on bulk as well as amorphous thin films of the as-prepared samples. Both the bulk glasses and amorphous thin films are found to manifest memory-type switching behavior. The threshold voltages of thin-film devices are found to be much lower than

The optimized postdeposition annealing (PDA) of the high- ${k}$ metal gate is investigated for 1/ ${f}$ noise performance improvement in FinFET technology by using spike annealing (SPA) and SPA-combined millisecond flash annealing (MFLA) treatment. It demonstrates that the additional MFLA can significantly reduce the 1/ ${f}$ noise without device performance degradation. Based on the low-frequency

Silicon-carbide metal–oxide–semiconductor field-effect transistors (SiC-MOSFETs) are core devices for future power electronics. The factors limiting their automotive applications are currently under investigation. Postoxidation annealing in NO gas is a key technology to achieving high carrier mobility in SiC-MOSFETs. In this article, we study the NO annealing effects on time-dependent dielectric breakdown

The ferroelectric (FE) polarization switching behavior in the HfZrO 2 (HZO) FE/dielectric (FE/DE) stack is investigated systematically by charge responses from pulse measurements. The trapped charge density at the FE/DE interface related with the FE polarization switching is found to be $1.2\,\times \,10^{14}$ cm −2 according to the leakage-current-assist polarization switching mechanism. Furthermore

A two-valley formulation of 1-D drift-diffusion transport is presented that takes the coupling between the valleys into account via a new approximation for the nonlocal electric field. The proposed formulation is suitable for the simulation of III–V heterojunction bipolar transistors as opposed to formulations that employ the single electron gas approximation with a modified velocity-field model, which

The temperature dependence of the electron and hole impact ionization coefficients in GaN has been investigated experimentally. Two types of p-i-n diodes grown on bulk GaN substrates have been fabricated and characterized, and the impact ionization coefficients for both electrons and holes have been extracted using the photomultiplication method. Both the electron and hole impact ionization coefficients

An organic nonvolatile memory is proposed based on the synergistic effect of the (three-aminopropyl) triethoxysilane (APTES) self-assembled monolayer (SAM) and the polystyrene (PS):eight-hydroxyquinoline (8-HQ) blend layer, where 8-HQ is used to provide the trapping sites for the nonvolatile memory, and PS is used to form the matrix for 8-HQ in order to improve the memory property. In addition, the

This article reports fabrication and characterization of field effect transistor (FET) device consisting of zinc oxide (ZnO) nanoparticle–glutathione-S-transferase (GST) composite channel for successful in vitro detection and quantification of glutathione (GSH) in solution and in cancerous cell. The functionalized channel layer is synthesized by means of electrostatic binding between ZnO nanoparticles

AlGaN/gallium nitride (GaN) ion-sensitive field-effect transistors (ISFETs) were fabricated as pH sensors. The sensitivity of the AlGaN/GaN ISFETs was evolved with gate recess process and ammonium hydroxide (NH 4 OH) treatment. By performing the gate recess process, the threshold voltage ( ${V}_{\text {T}}$ ) of the ISFET increased from −3.33 to −0.31 V and the maximum conductance ( ${G}_{\text {M}}$

Hydrogen fuel has attracted significant attention as an alternative clean energy for hydrogen vehicles and household fuel systems and has been expected to be pervasive. Thus, compact, low-power, and highly sensitive hydrogen sensors capable of being embedded in Internet-of-Things devices are in demand. In this work, an ultrahigh sensitive hydrogen sensor operating at room temperature based on the Pt-decorated

A concentric arc meander line (CAML) slow wave structure (SWS) was proposed for applications on low voltage and high efficiency Ka -band traveling wave tube (TWT). Due to the CAML formed with a series of concentric arcs, the electric field in the radial direction may be more uniform, which may make the beam–wave interaction more sufficient and the electron efficiency improved. The metal shielding structure

We propose a novel source of high-power 1–3-THz radiation based on frequency multiplication in a planar gyrotron, with transverse energy extraction. In such a scheme, it is possible to increase significantly the transverse size both of the cavity and of the electron beam, and, correspondingly, the output power at the fundamental harmonic. At the same time, equidistant mode spectrum of a cavity of planar

Energy consumption is one of the major concerns when planning large-scale high energy accelerator projects such as the future circular collider (FCC) and similar accelerators. To address this problem, we will describe the concept and simulations of a 1.4 MW, 800 MHz two-stage multibeam klystron (TS MBK) having a high efficiency (~80%) and compact design.

We improved the accuracy of gyrotron performance analysis using particle-in-cell (PIC) code. To accurately predict the performance of a device under development, an electron beam (e-beam) that has information that best represents realistic e-beam information should be used for a cavity simulation, and an investigation of factors that affect the e-beam information is necessary at the design stage. Thus

Due to the multipactor discharge breakdown, ferrite circulators have become the most susceptible component losing efficacy in high-power applications such as satellite payload systems. To date, effective suppression method of multipactor without affecting the electrical performance while keeping a high level of stability during in-orbit operation is still a technological challenge. In this article

In the development of a Ka -band overmoded Cerenkov oscillator, the issue of asymmetric modes competition should be paid attention to as they can be potentially excited in the overmoded cavity and then affect the performance of device seriously. Based on the 3-D models, the influences of the structural parameter such as “ ldr ” on the resonance characteristics for the symmetric modes and the asymmetric

Although phase-change materials (PCMs) have been studied for more than 50 years, temperature-dependent characterization of the phase transition dynamics remains challenging due to the lack of nanosecond-nanoscale thermometry. In this article, we utilize the four-terminal, indirectly heated phase-change switch (IPCS), which was originally designed for nonvolatile radio frequency (RF) applications, as

Charge trapping (CT) and fixed charge (FC) are considered in the model of transient negative capacitance (TNC). The roles of CT and FC on subthreshold characteristics of ferroelectric FET (FeFET) are investigated by experiment and simulation. The simulation results show that both CT and FC can modulate the subthreshold characteristics of FeFET by shifting the operation point dynamically and statically