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Dynamic $\textit{R}_{\bioscc{on}}$ Degradation in AlGaN/GaN MIS-HEMTs With Si$_{\text{3}}$N$_{\text{4}}$ or Si$_{\text{3}}$N$_{\text{4}}$/ZrO$_{\text{2}}$ Passivation Layer IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-14 Ye Liang, Yuanlei Zhang, Xiuyuan He, Yinchao Zhao, Jiudun Yan, Mingxiang Wang, Wen Liu
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High-Voltage Amorphous InGaZnO Thin-Film Transistors With ITO-Modulated Offset Region IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-14 Guangan Yang, Weijia Song, Zuoxu Yu, Tingrui Huang, Jie Cao, Yong Xu, Huabin Sun, Weifeng Sun, Wangran Wu
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A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel for 3-D Integrated Devices IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-14 Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto, Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka, Masaharu Kobayashi
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A Sheet Beam Electron Gun Based on Carbon Nanotube Cold Cathode IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-14 Junbo Ren, Yu Zhang, Jun Jiang, Xiaoyu Qin, Shaozhi Deng
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Hydrogen-Related Instability of IGZO Field-Effect Transistors IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-14 Gan Liu, Qiwen Kong, Dong Zhang, Xiaolin Wang, Zuopu Zhou, Leming Jiao, Kaizhen Han, Yuye Kang, Bich-Yen Nguyen, Kai Ni, Xiao Gong
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Ultrafast $\sim$7 Mbps True Random Number Generator Based on SNGCT Selector IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-13 Jeremy Guy, Elia Ambrosi, Cheng-Hsien Wu, Xinyu Bao
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Monolithic 3-D Integration of Counteractive Coupling IGZO/CNT Hybrid 2T0C DRAM and Analog RRAM-Based Computing-In-Memory IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-13 Yanbo Su, Mingcheng Shi, Jianshi Tang, Yijun Li, Yiwei Du, Ran An, Jiaming Li, Yuankun Li, Jian Yao, Ruofei Hu, Yuan He, Yue Xi, Qingwen Li, Song Qiu, Qingtian Zhang, Liyang Pan, Bin Gao, He Qian, Huaqiang Wu
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Polarization and Reliability Enhancement for Ferroelectric Capacitors by Interface Engineering Through Crystalline TaN IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-13 Yi-Fan Chen, Chen-Hsin Wang, Hung-Yuan Shih, Chun-Yi Kuo, Yung-Hsien Wu
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Preparation of High Conductivity Hydrogenated Silicon-Doped Diamond and MOSFET IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-13 Qi He, Jinfeng Zhang, Zihui Zhu, Zeyang Ren, Xinxin Yu, Jincheng Zhang, Kai Su, Yijiang Li, Qihui Xu, Junpeng Li, Yue Hao
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Study of Ethanol Gas Sensing Characteristics of An Al-Doped SnO$_{\text{2}}$ Thin Film Decorated With Gold Nanoparticles IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-13 Chao-Chun Chiu, Bo-Xun Zhu, Chi-Kang Kuo, Wen-Chau Liu
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High On/Off Current Ratio and High $\textit{V}_{\text{th}}$/$\textit{R}_{\text{on}}$ Stability GaN MIS-HEMTs With GaN/AlN Superlattices Barrier IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-13 Shanjie Li, Fanyi Zeng, Zhiheng Xing, Nengtao Wu, Ben Cao, Ling Luo, Changtong Wu, Wenliang Wang, Guoqiang Li
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CuTi as Potential Liner-and Barrier-Free Interconnect Conductor IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-12 Minghua Zhang, Daniel Gall
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Development of Wide-JFET Trench-Etched Double-Diffused MOS (TED-MOS) for High-Voltage Applications IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-11 Takeru Suto, Tomoka Suematsu, Yuki Mori, Haruka Shimizu, Akio Shima
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Laminated Ferroelectric FET With Large Memory Window and High Reliability IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-11 Hyun Jae Lee, Seunggeol Nam, Yunseong Lee, Kihong Kim, Duk-Hyun Choe, Sijung Yoo, Yoonsang Park, Sanghyun Jo, Donghoon Kim, Jinseong Heo
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Latchup Risk in a 4H-SiC Process IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-11 Chao-Yang Ke, Ming-Dou Ker
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RTS Noise Reduction in CMOS Image Sensors Using Correlated Extrema Cancellation IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-11 Abhinav Bhattacharya, Tusha Tanya, Mukul Sarkar, Boyd Fowler
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High-Pressure Deuterium Annealing for Trap Passivation for a 3-D Integrated Structure IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-08 Jung-Woo Lee, Joon-Kyu Han, Dong-Hyun Wang, Seong-Yun Yun, Jeong-Seob Oh, Byeong-Chan Bang, Won-Hyo Cha, Jun-Young Park, Yang-Kyu Choi
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Determining the Performance Limits of LDMOS With Three Common Types of Field Oxides IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-08 Ping-Ju Chuang, Ali Saadat, Sara Ghazvini, Hal Edwards, William G. Vandenberghe
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Energy and Disturbance Analysis of 1T-DRAM With Nanowire Gate-All-Around RFET IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-08 Rohit Kumar Nirala, Sandeep Semwal, Manish Gupta, Abhinav Kranti
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Analytical Modeling of Epsilon-Near-Zero Effect in Indium Tin Oxide and Its Application as an Optical Modulator IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-07 Omar Qasaimeh
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Analytical Release Voltage Model of Monolithic 3-D Integrated Nanoelectromechanical Memory Switches IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-07 Jin Wook Lee, Geun Tae Park, Woo Young Choi
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Toward Monolithic GaN on Si Inter-Sub-Band Infrared Optoelectronics IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-07 Idan Yokev, M. Agrawal, B. Eyadat, V. Kostianovskii, L. Gal, A. Cohen, L. Kornblum, N. Dharmarasu, K. Radhakrishnan, M. Orenstein, Gad Bahir
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Monolithic Integration of 80-GHz Ge Photodetectors and 100-GHz Ge Electro-Absorption Modulators in a Photonic BiCMOS Technology IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-07 Daniel Steckler, Stefan Lischke, Anna Peczek, Aleksandra Kroh, Johannes Beyer, Lars Zimmermann
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Quantum Transport Simulations of Sub-60-mV/Decade Switching of Silicon Cold Source Transistors IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-07 Hang Zhou, Xiping Dong, Raphaël J. Prentki, Ronggen Cao, Jian Wang, Hong Guo, Fei Liu
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Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-01 Matteo Meneghini, Geok Ing Ng, Farid Medjdoub, Matteo Buffolo, Shireen Warnock, Digbijoy Nath, Jun Suda, Junxia Shi, Shyh-Chiang Shen
On behalf of myself and the other guest editors for the Special Issue on “Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications” featured in this month’s IEEE Transactions on Electron Devices, we are pleased to offer readers a selection of papers that span the contemporary landscape of wide and ultrawide bandgap semiconductor devices.
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Corrections to “The Equation of Nonisothermal I–V Characteristic of a Schottky Diode With Thick Drift Layer” IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-01 Vasily A. Krasnov, Stanislav V. Shutov, Sergey Yu Yerochin, Oleksii M. Demenskyi
In [1, Sec. II] , the natural logarithm sign “ln” is missing from (5) . The correct form of the equation is the following:
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Effect of Transistor Transfer Characteristics on the Programming Process in 1T1R Configuration IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-06 Xiaohua Liu, Christopher Bengel, Felix Cüppers, Oliver Solfronk, Bojian Zhang, Susanne Hoffmann-Eifert, Stephan Menzel, Rainer Waser, Stefan Wiefels
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Design of a 0.23-THz Extended Interaction Klystron With Ridge-Loaded Hughes Structure IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-06 Zongjun Shi, Yubo Liu, Kui Xiang, Lin Zhou, Zhenhua Wu
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Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-06 Luigi Balestra, Elena Gnani, Mattia Rossetti, Riccardo Depetro, Susanna Reggiani
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Influence of Channel Structure on the Subthreshold Swing of InGaAs HEMTs at Cryogenic Temperatures Down to 4 K IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-05 Jaeyong Jeong, Jongmin Kim, Jisung Lee, Yoon-Je Suh, Nahyun Rheem, Seong Kwang Kim, Juhyuk Park, Bong Ho Kim, Joon Pyo Kim, Seung-Young Park, Sanghyeon Kim
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Noncarrier Injection Mode for Realizing One Line-to-Three LEDs Driving Method IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-04 Shuqian Zhang, Wenhao Li, Kun Wang, Yanming Guo, Zheng Gong, Zhipeng Zhang, Yongai Zhang, Xiongtu Zhou, Tailiang Guo, Chaoxing Wu
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Study on Multipactor Mechanism in a Two-Sided Dielectric-Loaded Rectangular Waveguide IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-04 Xue Zhang, Tao Wang, Qianqian Hu
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High Selectivity and Wide Range UV Photodetection in PEDOT:PSS/ Lu$_{\text{0}.\text{27}}$Sn$_{\text{0}.\text{73}}$O/ZnO Heterojunction IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-04 Dan Zhang, Jiarong Liang, Han Cai, Zhuogeng Lin, Guowu Tang, Xingui Tang, Qijun Sun, Wei Zheng
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Optothermal Performances Investigation of Phosphor-Converted White LDs With Alumina Substrate-Based PiGF Converters IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-04 Zikang Yu, Xin Liu, Hongjin Zhang, Ziliang Hao, Qing Wang, Yang Peng, Mingxiang Chen
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Hafnia-Based High-Disturbance-Immune and Selector-Free Cross-Point FeRAM IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-01 Zhiyuan Fu, Shengjie Cao, Hao Zheng, Jin Luo, Qianqian Huang, Ru Huang
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Machine Learning-Based Prediction of Antiferromagnetic Skyrmion Formation IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-01 Shipra Saini, Alok Kumar Shukla, Hemkant Nehete, Namita Bindal, Brajesh Kumar Kaushik
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Metal Boundary Effect Mitigation by HKMG Thermal Process Optimization in FinFET Integration Technology IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-01 Zhao-Yang Li, Xue-Jiao Wang, Yu-Long Jiang
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IEEE Transactions on Electron Devices Information for Authors IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-01
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Call for Nominations Editor-in-Chief IEEE Transactions on Device and Materials Reliability IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-01
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TechRxiv: Share Your Preprint Research with the World! IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-01
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Test and Analysis on the Gyromagnetic Nonlinear Transmission Lines With Different Magnetic Cores IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-03-01 Yancheng Cui, Jin Meng, Danni Zhu, Haitao Wang, Yuzhang Yuan, Liyang Huang, Xu Chu
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Light-Emitting Devices Attaining Theoretical Outcoupling Efficiency Exceeding 60% via Scattering Particles IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-02-29 Peng Kong, Wenzhe Huang, Jiachen Kang, Yu Zhao, Di An, Gufeng He
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Toward the Development of High-Performance Direct Electron Detectors by Means of TCAD Simulations IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-02-28 O. Marcelot, C. Marcelot, V. Goiffon
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Enabling Low-Power Charge-Domain Nonvolatile Computing-in-Memory (CIM) With Ferroelectric Memcapacitor IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-02-28 Xuepei Wang, BoYao Cui, Lingling Jing, Xiaolin Wang, Maokun Wu, Yicheng Wen, Yishan Wu, Jinhao Liu, Feilong Zhang, Zidong Lin, Yanan Sun, Pengpeng Ren, Sheng Ye, Runsheng Wang, Zhigang Ji, Ru Huang
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A Specific Contact Resistivity Extraction Scheme With Strong Variation Immunity Customized for Thin-Film Semiconductors: Bridge Transmission Line Method IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-02-28 Kaizhen Han, Yuye Kang, Yue Chen, Xiao Gong
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Experimental Analysis and Modeling of Self-Heating and Thermal Coupling in 28 nm FD-SOI CMOS Transistors Down to Cryogenic Temperatures IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-02-27 Flávio Enrico Bergamaschi, Tadeu Mota Frutuoso, Bruna Cardoso Paz, Gérard Billiot, Aloysius G. M. Jansen, Phillipe Galy, Emmanuel Vincent, Fred Gaillard, Blandine Duriez, Mikaël Cassé
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Impact of Sub-$\mu$m Wafer Thinning on Latch-Up Risk in DTCO/STCO Scaling Era IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-02-27 Kateryna Serbulova, Shih-Hung Chen, Geert Hellings, Anabela Veloso, Anne Jourdain, Jo De Boeck, Guido Groeseneken
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Inflection Points in GAA NS-FET to C-FET Scaling Considering Impact of DTCO Boosters IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-02-27 Dmitry Yakimets, Krishna K. Bhuwalka, Hao Wu, Gerhard Rzepa, Markus Karner, Changze Liu
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Impact of Device Parameters on the Performance of $\beta $-Ga$_{\text{2}}$OTEXPRESERVE2 Nanomembrane MESFETs IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-02-27 Anumita Sengupta, Ashvinee Deo Meshram, Tarun Kanti Bhattacharyya, Gourab Dutta
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Temperature-Dependent Thermal Impedance Measurement of GaN-Based HEMTs Using Transient Thermoreflectance IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-02-26 Xiang Zheng, James W. Pomeroy, Gautam Jindal, Martin Kuball
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Dispersion Characteristics From Simplified Dispersion Equation for Open Rectangular Planar Tape Helix IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-02-26 G. Naveen Babu, Nameesha Chauhan
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A Passive Hybrid Circuit Model for Electrostatic Discharge (ESD) Characterization IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-02-26 Yang Wang, Jian Yang, Yujie Liu, Xiangliang Jin, Yuan Wang
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Extrinsic Degradation of Flexible Poly-Si Thin-Film Transistors Under Dynamic Bending Stress IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-02-26 Wenjuan Zhou, Mingxiang Wang, Dongli Zhang, Huaisheng Wang, Qi Shan
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Self-Powered Photodetector With High Polarization Sensitivity Enabled by Ta$_{\text{2}}$PdS$_{\text{6}}$/MoTe$_{\text{2}}$ Heterojunction IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-02-26 Rui Xiong, Quan Chen, Tao Zheng, Zhidong Pan, Nengjie Huo, Meizhuang Liu, Jiapeng Chen, Jingbo Li, Derek Hao, Zuxin Chen
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Evaluation of Power and Linearity at 30 GHz in AlGaN/GaN HEMT Fabricated by Integrating Transistors With Multiple Threshold Voltages IEEE Trans. Elect. Dev. (IF 3.1) Pub Date : 2024-02-26 Pengfei Wang, Minhan Mi, Sirui An, Xiang Du, Yuwei Zhou, Can Gong, Yilin Chen, Qing Zhu, Meng Zhang, Jiuding Zhou, Jingshu Guo, Ziyue Zhao, Xiaohua Ma, Yue Hao
In this work, using the multiple threshold voltages (multi- ${V}_{\text {Ths}}{)}$ coupling technology introduces an innovative approach to leverage AlGaN/GaN-based high-electron-mobility transistor (AlGaN/GaN HEMT) for high linearity millimeter-wave (mm-W) applications. As a result of optimizing the etching depth of the recessed trench ( ${H}_{R}$ ), the fabricated composite HEMT demonstrated a remarkably