We have addressed density of states and electrical conductivity of doped graphene like nanotubes for both zigzag and armchair types in the context of tight binding model hamiltonian. The effects of next nearest neighbor hopping amplitude for electrons and gap parameter on electronic density of states and electrical conductivity have been investigated. Green’s function approach has been implemented

In this paper we present a study of the impact of technology on the CNTFET-based circuits performance. In particular we show the layout of a NOT gate, used as block to build a chain of NOT and a ring oscillator. Then we present the time domain simulations of these circuits in order to see how the parasitic elements could limit the high-speed performances of CNTFETs.

In tungsten (W) film chemical-mechanical-planarization (CMP), the chemical and mechanical reaction behaviors of the W film surface play a critical role in the CMP performance, as determined by oxidation (i.e.,WO 3 ), corrosion (i.e., WO 4 2− ), and the electrostatic force at the interface between abrasives and the surface. Unlike a conventional catalyst (i.e., Fe(NO 3 ) 3 ) for a Fenton reaction in

Due to the continuous increase of multilevel Cu/low- k interconnects, the total thermal budget has been increasing. As a result, the effects of post-annealing on the time-dependent-dielectric-breakdown (TDDB) and electromigration (EM) reliability of Cu/low- k interconnects were investigated in this study. Dense and porous low- k SiCOH dielectric films without or with an SiCNH capping layer were used

High driving voltage, low power efficiency, and insufficient device stability are the most critical complications for organic light-emitting diodes (OLEDs) on their way to practical applications. Particularly in the case of active-matrix organic light emitting device (AMOLED) displays, inferior electron injection from commonly-used ITO electrodes is a critical issue. In this work, 2-Methyl-9,10-bi

We investigated the effect of atomic layer deposition (ALD) Al 2 O 3 (50 nm)/plasma-enhanced chemical vapour deposition (PECVD) SiO 2 (250 nm) and PECVD SiO 2 (300 nm) passivation layers on the leakage current and efficiency of InGaN-based micro-LEDs with different sizes. Regardless of passivation layers, the leakage current increased with decreasing LED size and increasing reverse bias. Emission microscopy

In this work, the conduction mechanisms across novel contacts to epitaxial films of pure phase epsilon-Ga 2 O 3 ( ε -Ga 2 O 3 ) were investigated. Different structures made by sputtered metal and oxide thin films were tested as electrical contacts. I-V characteristics show heterogeneous behaviors, revealing different conduction mechanisms according to the applied bias. The results are interesting as

This research focuses on the radiation tolerance of ZnO and CuGaO 2 based semiconductor application for space borne application. In this research, n-ZnO/p-CuGaO 2 based semiconductor devices were fabricated and exposed to gamma rays with increasing total ionizing dose (TID) and neutron fluence at different flux. Based on the I-V properties, the decrease in the turn-on voltage of the diode is noticeable

Contact pressure at the workpiece/tin lap interface during full-aperture polishing is of great significance to workpiece’s material removal process. To promote the determinacy and efficiency of polishing process, a novel wireless contact pressure measurement system is developed. Further, the contact pressure distribution map is solved by the interpolation algorithm using the acquired contact pressure

This article provides an overview of the published mechanical stress data for boron- and phosphorus-contained silicate glass films deposited by a variety of chemically vapor deposited (CVD) techniques, i.e. atmospheric and sub-atmospheric pressure (APCVD, SACVD), low pressure, plasma-enhanced (LPCVD, PECVD). The emphasis is done on borophosphosilicate glass films (BPSG) dedicated for the use in mi

In the present study, hydrogen water was applied to ceria abrasive removal in post-CMP cleaning. The surface of the ceria abrasive was reduced by the hydrogen water from the Ce 4+ to Ce 3+ state. Reduction of the ceria abrasive can weaken the bonding between ceria and the SiO 2 wafer surface. X-ray photoelectron spectroscopy (XPS) and UV–visible observations were utilized to reveal the reduction from

Eight microelectrodes based on carbon and diamond paste modified with zinc complexes with: tetraphenylporphyrin (ZnTPP), tetranaphtoporphyrin (ZnTNP), tetrasulphophenylporphyrin (ZnTSPP) and phtalocyanine (ZnPc), were proposed for the assay of indigo carmine in wastewaters, pharmaceutical formulations and biological samples. All measurements were performed using differential pulse voltammetry. Indigo

We report the effect of extended duration electron beam exposure on the minority carrier transport properties of 10 MeV proton irradiated (fluence ∼10 14 cm −2 ) Si-doped β -Ga 2 O 3 Schottky rectifiers. The diffusion length ( L ) of minority carriers is found to decrease with temperature from 330 nm at 21 °C to 289 nm at 120 °C, with an activation energy of ∼26 meV. This energy corresponds to the

As the technology node of integrated circuits (ICs) shrinks down to 7 nm and below, cobalt (Co) has been identified as the promising candidate for the interconnect/contact material. In this paper, colloidal silica was used as abrasive, potassium tartrate (PTH) was used as the promoter of TEOS and complexing agent of Co and titanium nitride (TiN), H 2 O 2 was used as oxidant. The effects of PTH and

This paper reports pulsed DC and RF characteristics of GaN high-electron-mobility transistors (HEMTs) on a silicon substrate under external mechanical tensile strain. Tensile strain enhanced two-dimensional electron gas (2DEG) density resulted in increasing I D , f T and f max at CW measurement. Eliminating self-heating by pulse measurement, DC and RF characteristics between flat and bend devices were

A previously developed aqueous cleaning solution (4.2 mol l −1 each of H 2 O 2 and NH 4 OH) was found to be ineffective in cleaning oxide/nitride surfaces after contamination with ceria particles from slurries containing proline or citric acid. However, a cleaning solution consisting of 1 wt% ascorbic acid, 1 wt% ammonium carbonate and 50 ppm triton X-100 at pH 12, aided by ultrasonic cleaning, removed

Efficient aerobic oxidation of cyclohexene to the corresponding products catalyzed by iron (III) porphyrins in supercritical carbon dioxide (scCO 2 ) has been developed. Compared with the oxidation occurred in dichloroethane, the efficiency was improved significantly in scCO 2 , in which the cyclohexene conversion increased from 10.5% to 22.4%. Influence of various reaction parameters including catalyst

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A comparative study of lead alloy electrode and carbon fibers based β -PbO 2 (CF/ β -PbO 2 ) electrode for zinc electrowinning was discussed. The effect of electrodeposition time on the preparation and properties of the CF/ β -PbO 2 electrode was firstly studied. Surface morphology, interface properties, electrochemical property and corrosion resistance of the CF/ β -PbO 2 electrodes were investigated

Here, we demonstrate a two-step electrochemical approach for the synthesis of cobalt chalcogenides, CoQ (Q = S or Se) based on the prior modification of a substrate with S or Se, followed by electrochemical reduction in a Co 2+ -complexing electrolyte to afford CoS or CoSe in film form. The two-step strategy circumvents a common problem with the electrodeposition of metal chalcogenides, namely admixture

The end face of an optical fiber connector can be easily contaminated, the curvature radius of the end face can be difficult to guarantee, and the polishing film might not be durable during polishing. To solve these problems, a soluble fixed soft abrasive film polishing method was proposed. Through dyeing and dissolving, tensile strength, and polishing experiments, the influence of the binder and abrasive

This paper benchmarks various epitaxial growth schemes based on n -type group-IV materials as viable source/drain candidates for Ge nMOS devices. Si:P grown at low temperature on Ge, gives an active carrier concentration as high as 3.5 × 10 20 cm −3 and a contact resistivity down to 7.5 × 10 −9 Ω.cm 2 . However, Si:P growth is highly defective due to large lattice mismatch between Si and Ge. Within

We investigated the tribological, thermal and kinetic aspects of SiO 2 and Si 3 N 4 polishing on blanket and patterned wafers for STI CMP. Results showed the absence of anomalous tribological vibrational behaviors thanks to synergies between the colloidal CeO 2 -based slurry and application-specific conditioner. Removal rates for the two processes showed non-Prestonian behavior as both mechanical and

This work reports transfer curve characterization, capacitance-voltage measurement, bias stress test, bending and stretching tests of the high fidelity flexible and stretchable thin-film transistors constructed on unsorted single-walled carbon nanotubes drain-source-gate electrodes, sorted semiconducting single-walled carbon nanotubes thin film active layer, and nonpolar styrene−ethylene−butadiene−styrene

A surface-protected etching approach was used to synthesize monodisperse partially hollow carbon nanostructures with pseudocubic shapes. Monodisperse chemical templates ( α -Fe 2 O 3 , MF ) were synthesized by the gel-sol method and coated with a polyvinylpyrrolidone (PVP) protective layer. Pyrrole monomers were dispersed around the PVP-protected α -Fe 2 O 3 templates. Upon acidic etching, Fe 3+ ions

Beta-(Al x Ga 1−x ) 2 O 3 thin films were prepared on c-plane sapphire substrates by low-pressure reactive vapor deposition at different temperature. The crystal structure, surface morphology, and optical properties of β -(Al x Ga 1−x ) 2 O 3 films were investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS)

Cobalt, the 3rd generation material for interconnect in deep nanometers’ processing. Cobalt reduces the interconnect structure and process complexity compared to the dual damascene process. In this article, we investigate the effects of complexing agent L-Aspartic acid (L-Asp) and oxidant H 2 O 2 for polishing Cobalt based on chemical mechanical polishing (CMP). The results show that the water-soluble

In this study we compare the growth of gallium oxide films by halide vapor phase epitaxy (HVPE) on various substrates under the same growth conditions. Gallium oxide films were deposited at 500 °C–600 °C on basal plane (0001) planar and patterned sapphire substrates, (0001) 2H-GaN, 4H-SiC, and ##IMG## [http://ej.iop.org/images/2162-8777/9/4/045014/jssab8b4cieqn1.gif] {$\left(\overline{2}01\right)$}

A high conversion efficiency of 20.2% is achieved for simple structured-Si solar cells without a conventional anti-reflection layer. The ultralow-reflectance less than ∼3% is achieved by formation of a nanocrystalline Si (nc-Si) layer using the surface structure chemical transfer (SSCT) method which takes only 15 s. The nc-Si layer is passivated by phosphosilicate glass, while the rear Si surface is

The deep levels in amorphous Ge 0.5 Se 0.5 layers have been analyzed by Deep Level Transient Spectroscopy (DLTS). To that end, Metal-Insulator-Semiconductor (MIS) capacitors have been prepared by Physical Vapor Deposition of the films on p-type silicon substrates. A so-called quasi-constant capacitance procedure has been developed to account for the strong flat-band voltage shift of the capacitance-voltage

Polystyrene (PS)/CeO 2 core/shell abrasives with different shell thicknesses were synthesized and exploited to obtain high-quality 4H-SiC surface in electro-chemical mechanical polishing (ECMP). The synthesized PS/CeO 2 abrasives were observed by a scanning electron microscope (SEM); the results showed PS/CeO 2 with a similar core (200 nm) but different shell thicknesses (8.5, 15.5, 20.5 and 27.5 nm)

One of the issues in GaN based hydrogen sensors is that the sensor signal is affected by the ambient temperature as well as hydrogen exposed to the device. This may trigger a false arm in safety system and a malfunction of hydrogen fuel cell vehicle. We demonstrate an AlGaN/GaN-based hydrogen gas sensor set with simple temperature compensation structure to overcome the effect of the ambient temperature

We investigated the effects of etching conditions on the performance of light-emitting diodes (LEDs) of various sizes aimed at vehicle headlamp applications. Photoluminescence (PL) images showed that after wet etching, the percentage of bad LED arrays significantly increased from 75% to 94%, and the leakage current at −5 V significantly increased from 1.14 × 10 −9 A to 5.02 × 10 −6 A. It was shown

In the present work, effect of swift heavy ion (SHI) irradiation on structural and optical properties of β -Ga 2 O 3 thin films was investigated. Different ion fluences ( ϕ ) of 120 MeV Ag 9+ ions ranging from 1 × 10 11 ions-cm −2 to 5 × 10 12 ions-cm −2 were employed. The films were grown at room temperature (RT) using electron beam evaporation method and post-deposition annealing was done at 900

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In this work, the charge retention properties of the thermal ALD-Al 2 O 3 trapping layer with metal-oxide-oxide-oxide-silicon (MOOOS) gate stack have been investigated for non-volatile memory application. The precursor gas concentrations were changed to engineer the band gap of the Al x O y trapping layer and the effect of Al x O y post-deposition annealing on charge retention properties was studied

To improve the blocking performance of Ga 2 O 3 Schottky barrier diode (SBD), based on the field strength distribution at the bottom of the trench and edge effect, the impacts of structure parameter on breakdown voltage and the figure of merit (FOM) were investigated by TCAD simulation and optimization. The results indicated that the breakdown voltage raised as the corner radius of trench R and the

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Thermally stimulated luminescence (TSL) of β -Ga 2 O 3 single crystals doped with Cr 3+ and Mg 2+ impurities was investigated. Based on the correlation between the Cr 3+ concentration and light sum accumulated in the thermoluminescence (TL) glow peak at 285 K, it was concluded that doping of β -Ga 2 O 3 with Cr 3+ ions leads to the formation of electron traps manifested in this peak. The activation

In this work, the RF performance of proposed p-type NiO pocket based β -Ga 2 O 3 /graphene heterostructure MOSFET has been investigated. The figure of merits (FOMs) for its performance investigation includes transconductance (g m ), output conductance (g d ), intrinsic capacitances (gate to drain capacitance C gd and gate to source capacitance C gs ) and cut-off frequency (f T ). The large signal CW

Tin (Sn)-doped beta phase gallium oxide ( β -Ga 2 O 3 ) nanostructures at different Sn concentrations (0 to 7.3 at%) are synthesized using a facile hydrothermal method. The Sn-doped β -Ga 2 O 3 nanostructures are characterized using scanning electron microscopy, transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray powder diffraction, X-ray photoelectron spectroscopy, and absorbance

Local plasmatic resonance existing around nanoscale metallic structures is closely related to the refractive index of the surrounding media. Gold Lamellae layers embedded in gratings are ideal to populate the plasmatic resonances locally with much higher concentration than the simple gratings, leading to enhanced sensitivity to the testing materials. Based on our earlier success in replicating dielectric

Films of α -Ga 2 O 3 doped with Sn were grown by halide vapor phase epitaxy (HVPE) on planar and patterned sapphire substrates. For planar substrates, with the same high Sn flow, the total concentration of donors was varying from 10 17 cm −3 to high 10 18 cm −3 . The donor centers were shallow states with activation energies 35–60 meV, centers with levels near E c –(0.1–0.14) eV (E1), and centers with

The Racah parameters in conjunction with the Tanabe—Sugano energy-level diagram are widely used as a means of describing the effects of electron—electron repulsion within the metal complexes in coordination chemistry. A determination of the excitation energy levels in the 3 d 3 -configuration ions (Mn 4+ , Cr 3+ , etc.) is possible from a set of Racah parameters ( B and C ) and crystal-field splitting

The potential of ultrawide-bandgap (UWBG) semiconductors has not been fully explored because of the difficulty of forming a p-n homojunction. In this study, a mixed-dimensional UWBG p-n heterojunction composed of a p-type diamond substrate and an n-type exfoliated β -Ga 2 O 3 nanolayer has been demonstrated via a van der Waals interaction; this type of structure does not suffer from lattice mismatch

In this study, a GaN/LiNbO 3 hybrid wafer was demonstrated using room-temperature bonding based on a surface activated bonding (SAB) method. The SAB using Fe-containing Ar ion beam bombardment achieved a strong bond between GaN and LiNbO 3 wafers. The bonded wafer made using the modified SAB method was successfully cut into 1 × 1 mm 2 dies using a dicing saw without interfacial debonding, and the measured

Carbon Nanotubes (CNT) are important fillers and reinforcing agents, frequently used in polymeric composites. CNT agglomerate and entangle with each other due to the presence of strong van der Waal forces between them. This agglomeration not only results in decreased product quality but also in lower conductance of composite than expected. Deagglomeration of CNT bundles is necessary for a better dispersion

The initial growth of a porous alumina film with a large-scale cell structure formed by galvanostatic anodizing in etidronic acid was investigated in detail by high-resolution microscopy. High-purity aluminum plates were galvanostatically anodized in etidronic acid at 2.5–20.0 Am −2 . The formation of an anodic oxide and the subsequent instability of the outer oxide simultaneously occurred at the early

This work focuses on characterization the performance of enhanced interface of organic light emitting diode (OLED) device by Self-assembled Monolayer (SAM) technique. SAM technique is popular in order to overcome the weak bonding at the organic/inorganic interface in OLED. New generation of SAM molecules, phenyl-benzoic-acid (PBA, 4-(9H-carbazol-9-il) benzoic acid (MZ39), 4-(2,5-di-2thienyl-1H-pyrrol-1-il)

Cobalt (II) phthalocyanine (CoPc) supported on graphene (CVD), carbon black (Vulcan XC72), multi walled carbon nanotube (MWCNT) and their mixtures were evaluated as electrocatalysts for oxygen reduction reaction in acid electrolytes and polymer electrolyte membrane fuel cells (PEMFC). Graphene (G) and carbon supported CoPc catalysts were prepared by impregnation method. Three different temperatures

Following up our earlier work that highlighted the relationship between shear force (SF) and platen motor current (PMC), in parallel with the relationship between coefficient of friction (COF) and PMC for various tungsten and interlayer dielectric (ILD) chemical mechanical planarization (CMP) cases at non-steady-state conditions, we explored whether or not PMC could be used as a reliable indicator

This paper presented a fully depleted silicon on insulator (FD-SOI) MOSFET in nano scale size with deployment the quasi two dimensional β -Ga 2 O 3 material to improvement electrical properties. The main idea of the proposed structure is embedding a layer of the β -Ga 2 O 3 in the drain region. Due to the β -Ga 2 O 3 material features, the electric field distribution near the drain and gate side will

Impedimetric D-Xylose and D-Arabinose sensors was development from composite electrodes of graphite and histological paraffin, modified with functionalized multi-walled carbon nanotubes (FMWCNTs) based on molecular imprinted poly-o-phenylenediamine (poly-o-PD). The contribution of this work was not only the development of a D-xylose and D-Arabinose MIP impedimetric sensor with good performance, but

This work concerns the synthesis and optical characterization of a novel Mn 4+ activated luminescent material with chemical composition of [C(NH 2 ) 3 ] 2 GeF 6 :Mn 4+ . This is the first report of a Mn 4+ activated fluoride comprising organic moieties. X-ray diffraction, IR transmission, differential thermal analysis/thermogravimetry and inductively coupled plasma-mass spectrometry analyses were performed

TaO X is one of the most promising switching materials for resistive random access memory (RRAM) due to its excellent endurance. In this letter, the TaO X -based RRAM devices with three different electrode structures were designed and fabricated to reduce its operating voltage and improve its uniformity. The ITO/TaO X /TiN device could maintain more than ∼10 4 cycles with high uniformity in low operating

The exceptional properties of two-dimensional (2D) nanoclay fillers can alter the dielectric and thermo-mechanical properties of the thermoplastic materials and consequently extend its engineering applications. In this work, polyethylene (PE) was filled with 2D organo-modified montmorillonite nanolcay (O-MMT) to fabricate polyethylene/clay nanocomposites. The dielectric properties of neat PE and its

Using finite-difference time-domain method, the light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) is investigated. Simulation results show that compared to flat sapphire substrate, the nano-patterned sapphire substrate (NPSS) expands the extraction angles of top surface and sidewalls. As a result, the LEE of transverse-magnetic (TM) polarized light is

Due to its high optical permeability, excellent high temperature resistance, and chemical inertness, fused silica (FS) has been widely used in astronomical telescopes, laser systems, and optical communication. Based on the smooth surface polishing of fused silica using ceria slurry, the variations of polishing performance of fused silica in the recycling polishing were studied. Meanwhile, the variations

A low-temperature multi-frequency electron spin resonance (ESR) study has been carried out on 1, 3.5, and 6 layer thick MoS 2 films, grown by metal organic vapor deposition (MOCVD) and subsequently transferred on SiO 2 /Si. This reveals the observation of a previously unreported, nearly isotropic signal at g ≈ 1.9998 with corresponding spin center (spin S = ½) densities ranging from ∼6 × 10 8 cm −2

This research is focusing on the geometrical variation effects of carbon nanotube field effect transistor (CNTFET). The characteristics of the CNTFET are observed based on different CNTFET diameter, the oxide thickness and the chiral vector. The characteristics under study includes the drain current, I ON /I OFF , the quantum capacitance as well as the threshold voltage. The work is carried out using