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Effect of Film Density on MgSiO3-Based Resistive Random-Access Memory ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-28 Fu-Yuan Jheng, Sheng-Po Chang
Different film density MgSiO3 based resistive random-access memorys (RRAMs) are fabricated to investigate the resistive switching behaviors. The X-ray diffraction results, set voltage, reset voltage, cycling endurance, and retention time are drawn for comparison. With the increasing oxygen ratio gas flow, the resistive switching characteristics of MgSiO3 RRAM are drastically elevated by changing the
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Influence of Al Doping on the Structural, Optical, and Electrical Characteristics of ZnMn2O4 ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-22 Zein K. Heiba, M. M. Ghannam, Mohamed Bakr Mohamed, Moustafa M. S. Sanad, A. M. El-naggar, Abdallah A. Shaltout
Doped zinc manganite samples were synthesized using the sol-gel method, incorporating varying amounts of aluminum (ZnMn2-xAlxO4, x = 0, 0.03, 0.05, 0.07, 0.1). High quality X-ray diffraction data enabled detection and accurate quantification of the predominant phase ZnMn2O4 (ZMO) and minor phase ZnO. The structure and microstructure of developed phases were investigated applying the Rietveld refinement
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Effect of High Current Density Pulses on Performance Enhancement of Optoelectronic Devices ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-21 Md Hafijur Rahman, Nicholas Glavin, Aman Haque, Fan Ren, Stephen J. Pearton
Thermal annealing is commonly used in fabrication processing and/or performance enhancement of electronic and opto-electronic devices. In this study, we investigate an alternative approach, where high current density pulses are used instead of high temperature. The basic premise is that the electron wind force, resulting from the momentum loss of high-energy electrons at defect sites, is capable of
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Simulation Research on High-Voltage β-Ga2O3 MOSFET Based on Floating Field Plate ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-21 Wentao Wang, Yuncong Cai, Xusheng Tian, Huhu Gao, Wenji Li, Zhifeng Lei, Chunfu Zhang, Qian Feng, Zhengxing Wang, Yue Hao
The simulation model of a depletion-mode (D-mode) β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) is constructed by Silvaco ATLAS technology computer-aided design (TCAD) simulation, which employs an epitaxial drift layer grown on a sapphire substrate. On this basis, the floating field plate (F-FP) structure based on the gate-pad-connected field plate (P-FP) is proposed to improve
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Ni/Porous Carbon-Based Composite Derived from Poplar Wood with Ultrabroad Band Microwave Absorption Performance ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-21 Liqun Zhao, Qixin Zhuang, Guoxiang Hu, Baoqin Zhang, Shibing Pan
Electromagnetic wave (EMW) absorbers and electromagnetic shielding materials have attracted much attention in recent years. In this paper, Ni/wood-based porous carbon (WPC) composite material was prepared via morphology genetic method by using nickel chloride and poplar as raw material, The experimental results show that the microwave absorbing properties of the materials are related to the pyrolysis
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Energy Gaps, Optical Transitions, and Exciton Properties of ZnSe at High Pressures ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-21 Nidhal Drissi, Abdelaziz Gassoumi, Nadir Bouarissa
Lattice parameters, band-gap energies, optical transitions and exciton properties of ZnSe at high-pressures up to 100 kbar have been studied using a pseudo-potential method. Results are generally in good agreement with experiment at zero pressure. Adachi’s expression formula for exciton binding energy and Bohr radius are adjusted giving a significant accordance with experiments. A very good accord
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Modeling and Simulation Characteristics of a Highly-Sensitive Stack-Engineered Junctionless Accumulation Nanowire FET for PH3 Gas Detector ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-20 0000-0003-4736-7304Neeraj1s.neerumalik@gmail.com, Shobha Sharma, Anubha Goel, Rewari Sonam, S. S. Deswal, R. S. Gupta
In this manuscript, a Stack Engineered Junctionless Accumulation Nanowire FET (SE-JAM-NW FET) has been proposed for low - power and high sensitivity phosphine (PH3) gas detection applications. In comparison to a standard nanowire FET, the SE-JAM-NW FET is used at nanoscale dimensions because of its inherent benefits, including low cost, improved portability, low Off- state current and increased On-state
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Synthesis and Characterization of Flower-Like Cobalt-Doped ZnO Nanostructures for Ammonia Sensing Applications ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-16 B. Himabindu, N. S. M. P. Latha Devi, P. Nagaraju, B. Rajini Kanth
The future trajectory of gas sensor development focuses mainly on two key aspects: minimizing power consumption and enhancing the capability to detect hazardous gases at lower concentrations under ambient conditions. The present study used the co-precipitation method to explore the synthesis of zinc oxide and cobalt-doped ZnO sensors, encompassing a range of cobalt concentrations from 1 wt% to 4 wt%
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Erbium-Ion-Doped Bismuth Borate Glasses for High Optical Gain NIR Fiber Laser Applications ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-14 M. Prasanth, Nirlakalla Ravi, K. Thyagarajan
The study focused on investigating the thermal, structural, and luminescent properties of bismuth borate glasses doped with erbium (Er3+) ions and modified with Gd2O3, K2O, and Li2O (BBGKL: Erx) aiming for fiber lasers. Two glass transition temperatures were observed at 381 (Tg1) and 471 K (Tg2) for BBGKL glass. O1s de-convolution spectrum bridging oxygens for BBGKL glass, including B-O, Bi-O, Li2O
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Improving Energy Storage Properties of KNN Ceramic through Composition Modification ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-14 Ya Yang, Yuesong Li, Jizhong Deng, Ronglian Li, Mingxing An, Zhiming Gao, Yuanyu Wang
In this study, (1−x)K0.5Na0.5NbO3−xBa0.5Sr0.5(Zn1/3Nb2/3)O3, [(1−x)KNN-xBSZN] lead-free relaxor ceramics were fabricated by a conventional solid-state reaction method. XRD and Raman spectra confirm the R-C phase transition of the ceramics. The incorporation of BSZN effectively suppresses grain growth, enhanced the electrical resistivity, and improved the relaxation behavior. By analyzing the ferroelectric
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Investigation of GaN-Based Micro-LEDs with Effective Tetramethylammonium Hydroxide Treatment ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-14 Zhen-Jin Wang, Xin-Liang Ye, Li-Yun Su, Wei-Chen Tu, Chih-Chiang Yang, Yan-Kuin Su
This study investigates the effects of TMAH treatment on 5 μm-sized GaN-based Micro LEDs. Compared with untreated GaN Micro LEDs, the optical output power and external quantum efficiency of TMAH treated Micro LEDs are significantly improved. These results can be attributed to the formation of microstructures on the sidewall of Micro LEDs through the TMAH treatment and the effective light reflection
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Fabrication and Development of a Biomass-Based Supercapacitor with Enhanced Energy Storage Characteristics ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-12 Haziqul Yaquin, G. Raam Dheep, Yogesh Kumar Verma
In this work, a raw carbon waste parali biomass is collected to develop a supercapacitor. The activated carbon developed is characterized using X-ray diffraction (XRD), Field effect scanning electron microscope (FESEM), Energy dispersive spectroscope (EDS), and Brunauer–Emmett–Teller (BET) analyses. The porous and crystalline activated carbon achieved a remarkably high carbonaceous value of 99.85%
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Morphological and Optical Characterization of Hydrothermally-Synthesized Two-Dimensional MoS2 Nanosheets ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-09 0009-0002-2723-6382Afsana1, Sonia Bansal
Transition metal dichalcogenides (TMDs) are extensively utilized in optoelectronics, sensors, and battery storage due to their versatile properties. Among the TMDs, Molybdenum disulfide (MoS2) nanosheets possess remarkable optical, electronic, and chemical properties. This study employed a cost-effective hydrothermal method to synthesize high-quality 2D MoS2 nanosheets. Different characterization techniques
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Impact of Varying Position and Ratio of Charge Generation Layer on Performance Parameters of Organic Photodiode ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-07 Sugandha Yadav, Poornima Mittal, Shubham Negi
Organic photodiodes have emerged as the best alternative to inorganic devices during the last decade. Herein, a highly efficient organic photodiode having charge generation layer (CGL) is demonstrated. This charge generation layer is a combination of HAT-CN (hexaazatriphenylene-hexacarbonitrile) and TAPC (1,1-bis[(di-4-tolyamino)phenyl)]cyclohexane) materials which generate electrons and holes, correspondingly
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Synthesis of Tin/Tin Oxide (Sn-SnO2) Microparticles Scattered on Natural Phosphate and Its Utilization in Capturing Amoxicillin Antibiotic in Real Water Samples ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-07 B. Chhaibi, A. Loudiki, A. Hrioua, F. Laghrib, A. Farahi, M. Bakasse, S. Lahrich, M. A. EL Mhammedi
Microparticles of tin and tin oxide scattered on natural phosphate (Sn-SnO2)-NPh were thermally prepared and then used as a modifier of a graphite electrode for amoxicillin (AMX) detection using DPV. It was characterized by FTIR, SEM and XRD. The Sn formation was confirmed by the appearance of their corresponding peaks in the XRD pattern. In addition, the transformation of Sn into SnO2 and Ca(SnO4)
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Machine-Learning-Assisted Blood Parameter Sensing Platform for Rapid Next Generation Biomedical and Healthcare Applications ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-07 Sangeeta Palekar, Jayu Kalambe, Rajendra M. Patrikar
The pursuit of rapid diagnosis has resulted in considerable advances in blood parameter sensing technologies. As advances in technology, there may be challenges in equitable access for all individuals due to economic constraints, advanced expertise, limited accessibility in particular places, or insufficient infrastructure. Hence, simple, cost efficient, benchtop biochemical blood-sensing platform
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IoT-Driven Experimental Framework for Advancing Electrical Impedance Tomography ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-07 Ramesh Kumar, Ratneshwar Kumar Ratnesh, Jay Singh, Ashok Kumar, Ramesh Chandra
This research paper focuses on the current emphasis on the latest industrial revolution, particularly the innovative integration of artificial intelligence and the Internet of Things (IoT). The study explores the seamless integration of Electrical Impedance Tomography (EIT) with IoT, presenting a groundbreaking framework where impedance-based sensing plays a vital role in enhancing the dynamic and
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Improving the Electrical and Optical Characteristics of AlGaInP Red Micro-LEDs by Double Dielectric Passivation ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-07 Seung-Hyun Mun, Je-Sung Lee, Sunwoo Shin, Seong Ran Jeon, Soo-Young Choi, Hoe-Min Kwak, Kyung-Pil Kim, Jeongwoon Kim, Chang-Mo Kang, Dong-Seon Lee
This study presents a comprehensive investigation into the optimization of AlGaInP-based red micro-light emitting diodes (LEDs) by implementing double dielectric passivation layers. We employed a two-step passivation process that combined atomic layer deposition (ALD) for a thin Al2O3 layer and plasma-enhanced chemical vapor deposition (PECVD) for a thicker dielectric layer to passivate the sidewalls
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Improved Adhesion of Direct Copper Seed Layer by Medium-Vacuum Sputtering Using Vacuum Ultraviolet Light ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-07 S. Endo, A. Shimizu, K. Fukada
A sputtering method is used to form the seed layer for copper electric plating. In general, copper sputtering has weak adhesion to resin, so titanium sputter is combined to increase the adhesion strength. However, etching in the lithography process requires two types of processes, titanium and copper metal. Adhesion strength was improved by performing vacuum ultraviolet (VUV) treatment as a pretreatment
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Achieving High Dielectric Constant in γ-Al2O3-rGO Nanocomposite Prepared by Microwave-Assisted Co-Precipitation Method ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-07 Rajababu Chintaparty, Sreenivasa Kumar Godlaveeti, Sai Kumar Arla, Asma A. Alothman, Sambasivam Sangaraju, Mohammed Mushab, Ramamanohar Reddy Nagireddy
In this study, γ-Al2O3-GO, and γ-Al2O3-RGO nanocomposites were synthesized by the microwave-assisted coprecipitation method to study their electrical properties. XRD pattern and EDAX confirmed that the nanocomposites successfully were synthesized. TEM studies confirmed that γ-Al2O3 NPs formed into spherical particles and that these particles were dispersed randomly on RGO in contrast to γ-Al2O3-GO
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Sensitivity Analysis of a Double Source Stack Lateral TFET-Based Gas Sensor ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-06 George Mili, Zohming Liana, Brinda Bhowmick
Metal oxide semiconductor gas sensors are used recently in various roles and sectors for environmental safety as compared to other sensing technology due to its low cost, durability, longevity, and rapid sensing capability under humid condition. The current work proposes a dual stacked heterogeneous source lateral n type tunnel field-effect transistor (DSHS-nTFET) for gas sensing applications. The
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Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-06 A. B. M. Hasan Talukder, Md Tashfiq Bin Kashem, Raihan Khan, Faruk Dirisaglik, Ali Gokirmak, Helena Silva
We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ∼70–100 nm wide lateral Ge2Sb2Te5 (GST) line cells. The cells were amorphized using 1.5–2.5 V pulses with ∼50–100 ns duration leading to ∼0.4–1.1 mA peak reset currents resulting in amorphized lengths between ∼50 and 700 nm. Resistance drift coefficients
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Experimental and Theoretical Realization of Morphology and Frequency Tuned Charge Transport Dynamics in Co-Zn Doped SrM Hexaferrite: Electrical, Impedance and Relaxation Realm ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-06 Manisha Thakur, Charanjeet Singh, R. B. Jotania, Shaban I. Hussein, A. K. Srivastava
The present report comprehensively investigates the influence of sol-gel synthesized cobalt and zinc-substituted SrFe12O19 on the morphological, structural, dielectric, and electrical characteristics. XRD analysis revealed that the substituents successfully replaced Fe3+ ions, leading to the existence of magneto-plumbite structure of M-type hexaferrite in all synthesized samples with some minor traces
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Structural and Temperature Dependent-Magnetic and Dielectric Properties of CoNd x Fe2−x O4 (0 ≤ x ≤ 0.1) Nanoparticles ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-01 Bittu Singh, Kuppam Mohan Babu, M. Bhaskaraiah, Pushpalatha Kavuluri, Rajendra Joshi, Bhuwan Chandra
We present an investigation into the structural and magnetic properties of neodymium-doped cobalt ferrites, described by the general formula CoNd x Fe2−x O4 (where x = 0, 0.02, 0.04, 0.06, 0.08 & 0.10). CoNd x Fe2−x O4 nanoparticles were synthesized using sol-gel auto-combustion method with tartaric acid employed as a chelating agent. The strength of the X-ray diffraction (XRD) peak diminishes as the
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Investigating the Effect of Particle Sizes of SiC and Graphite on Strengthening of Aluminium Metal Matrix Composites ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-02-01 Dinesh Chawla, Manoj Nayak, Pallav Gupta
The endeavour of this research work is to scrutinize the effect of reinforcement materials: Silicon Carbide (SiC) and Graphite (Gr) on the mechanical properties of Al-Mg-Si alloy (AA6061). Sample of composites were fabricated using the stir casting technique, incorporating four weight (wt.) ratio of individual reinforcement and two different sizes of the particles. SiC, a resilient ceramic and graphite
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Optimized Charge Dynamics of Sr2Fe2O5/rGO Composite Electrodes: Redefining Supercapacitor Efficiency ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-31 Muhammad Bilal, Farooq Ahmad, Sidra Zawar, Umer Waqas, Muhammad Ahmed Khan, Shahid M. Ramay, Shahid Atiq
Mixed transition metal oxides have become highly effective electrode materials due to their remarkable cyclic stability and improved capacitance, which has consequently led them to display exceptional electrochemical performance. In this work, a facile synthesis of Sr2Fe2O5/reduced graphene oxide composites was carried out through a solvothermal technique to investigate the electrochemical performance
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Adjusting the Effects of Cr3+ Doping on Structural, Dielectric, Antimicrobial Properties of Delafossite SrCuO2 Nanoparticle ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-31 Abeer T. Talha, Talaat M. Meaz, Amany M. El Nahrawy
SrCu(1−x) Cr x O2 nanoparticles (x = 0.0, 0.6, 1.2, and 1.8) nanoparticles were synthesized using sol-gel processing and subjected to calcination at 650 °C. The investigation delved into the influence of varying chromium concentrations on the structural, FTIR, electrical, and antimicrobial characteristics. The microstructure of the SrCu(1−x)Cr x O2 nanoparticles (x = 0.0, 0.6, 1.2, and 1.8) nanoparticles
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Anodic Porous Alumina Membranes with Chemical Stability Improved by Atomic Layer Deposition Coating of TiO2 ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-31 Haruka Itoh, Takashi Yanagishita
Anodic porous alumina (APA) membranes with a high density of uniformly sized pores are promising materials for microfiltration. However, such membranes obtained by anodizing Al are amorphous, chemically less stable, and cannot be used to filter acidic or basic solutions. The chemical stability of APA membranes can be improved by heat treatment at temperatures above 1000 °C, resulting in membrane filters
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Electronic and Optical Properties of Mn-Doped HgSe Topological Insulator for Spintronic Devices ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-30 Nour El Houda Habibes, Abdelkader Boukortt, Said Meskine, Abdesamed Benbedra, Yousra Mamouni, Hamza Bennacer
HgSe is a Mercury chalcogenide material of the HgX family (where X = S, Se, Te) which crystallises in the zincblende crystal phase. The electronic band structure of HgSe is indicative of a new state of matter in the condensed phase that is of great interest for fundamental physics and possibly new applications. This paper reports ab-initio calculations of the structural, electronic, magnetic, and optical
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Investigation on Germanium Transistors with HfOx-Based Gate Stacks for CMOS Operations ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-30 Tzu-Chieh Hong, Chun-Jung Su, Yao-Jen Lee, Yiming Li, Seiji Samukawa, Tien-Sheng Chao
Germanium (Ge) FinFETs with HfOx-based gate stacks are fabricated to study the CMOS applications. To evaluate the logic circuit operation, the associated CMOS inverters are characterized. Compared to the HfO2, the Hf0.5Zr0.5Ox (HZO) gate stack provides higher drive currents and more symmetric Vth behaviors, which should be associated with the polarization effect. Through cyclic voltage transfer characteristic
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A Study on the Large AMOLED Display Backplane-Less Mask Process ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-30 In Young Chung, Guang Hai Jin, Hyun Sik Yoon
In this work, the large AMOLED Display Backplane LTPS 5Mask PA method was studied. A storage cap was formed by doping boron on the poly Si under the GI cap in the contact hole process without using a storage cap doping mask. In the contact hole process, half-tone PR was used to simultaneously perform cap doping and TFT Source drain open. Since half-tone PR must remain uniform to protect the cap lead-in
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An AlGaN-GaN HEMT with p-GaN Extended Gate for Improvements on Current Dispersion and Breakdown Characteristics ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-25 Krishna Sai Sriramadasu, Yue-Ming Hsin
This study introduces a novel p-GaN/AlGaN/GaN heterostructure wafer, implementing a unique p-type GaN gate AlGaN/GaN HEMT configuration. In this design, the p-GaN region extends toward the drain, eliminating the need for a gate electrode. This innovation significantly enhances the HEMT’s performance, with a 45.2% increase in breakdown voltage (BV) and a 17% higher threshold voltage (VTH) compared to
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Review —Recent Advances in Yttrium Titanate Pyrochlores: Crystal Structure and Impact of Doping Elements ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-25 Subramani Supriya
The invention of yttrium titanates (Y2Ti2O7) with various exciting properties in electroceramics has created great attention among industrialists and researchers. Improving the materials of pyrochlore oxides with significant properties for future electronic devices became essential. The Y2Ti2O7 is one such cubic pyrochlore at room temperature, having excellent dielectric and luminescence properties
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Ameliorated DC Insulation Performance of EPDM through Chemical Grafting with a Voltage Stabilizer ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-25 Jibin Zhang, Zhongyuan Li, Jian Zhang
Ethylene-Propylene-Diene Rubber (EPDM) is widely utilized as a high-performance insulation material in high-voltage direct current (HVDC) cable accessories, owing to its exceptional electrical and thermal properties. In this study, we have successfully synthesized and employed 4-vinyl oxyacetophenone (VPE) as a modification agent to develop the chemically grafted EPDM materials (EPDM-g-VPE) just through
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Hydrogen Termination Effect on SiO2/Si Interface State Density in CH3O-Molecular-Ion-Implanted Silicon Epitaxial Wafer for CMOS Image Sensors ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-24 Ryosuke Okuyama, Takeshi Kadono, Ayumi Onaka-Masada, Akihiro Suzuki, Koji Kobayashi, Satoshi Shigematsu, Ryo Hirose, Yoshihiro Koga, Kazunari Kurita
The reduction in SiO2/Si interface state density (Dit) at the SiO2/Si interface region is important to improve the performance of complementary metal-oxide semiconductor (CMOS) image sensors. The CH3O-ion-implanted region stores hydrogen and releases the stored hydrogen during the subsequent heat treatment. This study demonstrates that a CH3O-ion-implanted epitaxial silicon wafer can reduce the Dit
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Optical, Dielectric, and Electromagnetic Microwave Absorption Properties of Hexagonal Ba3(VO4)2 ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-24 Praveen Chenna, Saran Srihari Sripada Panda, Sahil Sharma, Suman Gandi, Saidi Reddy Parne
In this work, we used a simple sol-gel synthesis technique to prepare hexagonal Ba3(VO4)2. X-ray diffraction (XRD), Fourier transform infrared (FTIR), and Raman spectroscopy were performed, confirming that Ba3(VO4)2 has a hexagonal structure. To investigate the influence of interfacial interactions at grain boundaries on microwave absorption, AFM studies were performed. UV–vis studies show the direct
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Optimization and Mechanism of SiO2-Based Slurry Components for Atomically Smooth Gallium Nitride Surface Obtained Using Chemical Mechanical Polishing Technique ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-19 Wenhao Xian, Baoguo Zhang, Min Liu, Pengfei Wu, Ye Wang, Shitong Liu, Dexing Cui
With the ongoing progress of mobile communication and new energy technologies, the market interest in high-frequency and high-power semiconductor devices has risen. Gallium nitride (GaN), a wide bandgap semiconductor material, has become a popular area of research in relevant fields. A sufficiently flat material surface can significantly enhance the device’s performance. Therefore, this paper explores
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Engineering NiO Thin Film Properties using Ag9+ Ion Irradiation at Various Fluences ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-19 Karishma1, Neeti Tripathi, Ambuj Tripathi, Ratnesh Kumar Pandey, Vishal Bhushan, Vikas Sharma
The impact of the Ag9+ ion irradiation on the characteristics of nickel oxide (NiO) films with several ion fluences including 1 × 1012, 1 × 1013 and 1 × 1014 ions cm−2 has been studied. These films were deposited over fluorine-doped tin oxide (FTO) substrate via spin coating technique. After that, structural, optical, vibrational, and electrical characteristics of all films were investigated employing
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Electrical Transport Properties and Hopping Mechanism of ZrCuSiAs Type Compound GdFeAsO ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-19 Gyanendra Kumar Mishra, Prafulla Kumar Pradhan, N. K. Mohanty
The iron-based ceramic GdFeAsO has been prepared using the solid-state reaction method. This material exhibits unique properties, showing superconductivity at extremely low temperatures and behaving as a semiconductor at high temperatures. Raman spectroscopy revealed various Raman active modes in the sample. UV-visible spectroscopy was employed to study the optical properties of the material in the
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Analysis of Melting Dynamics and Parametric Optimization in Encapsulated Phase Change Materials for Thermal Energy Storage ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-18 Safwan Sharif, Rashmi Walvekar, Mohammad Khalid, Mahesh Vaka, Nabisab Mujawar Mubarak
Phase change materials (PCMs) effectively store thermal energy via latent heat absorption/release during solid-liquid phase transitions. Salt hydrates and paraffin waxes melting within 30 °C–75 °C are suited for low-temperature applications. However, inherent challenges include poor thermal conductivity and material leakage needing encapsulation. Here, we employ computational fluid dynamics (CFD) simulations
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Fully Inkjet-Printed Gas-Sensing Antenna Based on Carbon Nanotubes for Wireless Communication Applications ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-18 Hsuan-Ling Kao, Li-Chun Chang, Yun-Chen Tsai, Chun-Bing Chen, Hsien-Chin Chiu
This study presents a fully inkjet-printed antenna based on carbon nanotubes (CNTs) for ammonia-gas-sensing. The antenna-embedded CNT film must satisfy strict requirements in terms of resistance, uniformity, and stability. Various resistive-type gas sensors based on CNTs, which are controlled by droplet spacing (DS) and multiple passes, are realized by inkjet-printing technology to investigate their
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Trap States and Carrier Diffusion in Czochralski (100) Single Crystal β-Ga2O3 ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-17 V. I. Nikolaev, A. Y. Polyakov, V. M. Krymov, S.V. Shapenkov, P. N. Butenko, E. B. Yakimov, A. A. Vasilev, I. V. Schemerov, A. V. Chernykh, N. R. Matros, L. A. Alexanyan, A. I. Kochkova, S. J. Pearton
Deep trap spectra and carrier diffusion lengths were measured for unintentionally doped β-Ga2O3 bulk crystals with (100) orientation. The 20-mm diameter, 15-mm length boule was pulled by the Czochralski method from gallium oxide in (010) direction. It is found that the net density of shallow donors in (100) plates cleaved from the crystal was 2.6 × 1017 cm−3, with ionization energies of 0.05 eV measured
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Perspective—Prospect of Nano-Enabled Optical Biosensors for Antibiotic Abuse Surveillance as an Early Prevention Tool for Antimicrobial Resistance ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-17 Vishal Chaudhary, Sarvesh Rustagi, Ajeet Kaushik, Manisha Bhutani
Antimicrobial resistance (AMR) distressing human is driven by pragmatic contagion diagnostics and incessant inadvertent antibiotics abuse (AB). The state-of-the-art AB monitoring involves developing nanomaterials-enabled optical biosensors with prompt and precise detection efficacy. This prospect highlights the diversified optical biosensors, including SPR, SERS, fluorescent and colorimetric biosensors
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Unveiling the Versatile Realm of CdSnO3 Nanoparticles for Advanced Sensing Applications ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-17 P. Usha, Somoju Ramesh, P. Jayamurugan, R. Mariappan
This study presents the synthesis and characterization of CdSnO3 thin films at different deposition temperatures 400, 500 and 600 °C. The prepared samples were characterized by XRD, FTIR, SEM, EDAX, TEM, optical and ammonia gas sensing properties respectively. X-ray diffraction confirms the orthorhombic crystal structure, with prominent peaks corresponding to the (111), (112), (103), (130), and (133)
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PVA/CdS-Ag Nanocomposites: Effect of Composition and UV Radiation on Optical, Electrical and Structural Properties ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-17 Aditi Nain, Ekta Dhanda, Rishi Pal Chahal, Sanjay Dahiya
PVA incorporated with different content of CdS-Ag nanostructures are prepared using chemical reduction technique. Along with this these nanocomposites are exposed to UV radiated for different times. The X-ray spectraof PVA /CdS-Ag nanocomposites indicatethe formation of CdS and Ag nanostructures within PVA.Changes in the band structure of nanocomposites with and without UV exposure are studied by UV-Visible
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Experimental and Theoretical Study on the Influence of Fatty Alcohol Polyoxyethylene Ether on the Surface Roughness of Silicon in Alkaline Solutions ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-17 Xueyan Yang, Qi Fang, Ming Sun, Meiling Qi
In the final polishing process of silicon, it is susceptible to alkaline anisotropic chemical etch and may have residual silicon sol on the surface, leading to an increase in surface roughness of the wafer. To address this issue, this study investigates the mechanisms of how fatty alcohol polyoxyethylene ether AEO-9 and O-20 affect the surface roughness of silicon through systematic experimental measurements
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Oppositely-Doped Core-Shell Junctionless Nanowire FET: Design and Investigation ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-17 Bharti1bhartigndit@gmail.com, Poornima Mittal
Junctionless Nanowire Field Effect Transistor (JL-NWFET) has garnered significant attention in recent years owing to its simplified fabrication process, achieved through uniform doping across the device. However, JL-NWFET suffers from certain drawbacks, including low drive current, insufficient volume depletion, and lateral band-to-band tunneling. To address these issues, this paper proposes Improved
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Comprehensive Structural Analysis Identifies the Relationships Between the Electrical Characteristics of Environmentally Friendly NBTMn-BAl-NaNb Ceramics ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-17 Gadiraju Venkata Vijaya Bhaskara Rao, P. Sobhanachalam, Vijaya Dasaradha Sani, Balakrishna Avula, N. Giridhar Babu, Kumara Raja Kandula, Cilaveni Goutham, A. Ashok, Anees A. Ansari, T. Sambasiva Rao, S. Gangadhara, A. Chittibabu
We give an in-depth examination of the structural and electrical features of NBTMn–BAl–NaNb ceramics in the paper. The comprehensive structural investigation indicated an important connection among the phase and polarization mechanisms of the compounds/samples by Nb substitution. The quantitative study of phase contribution shown by Raman spectroscopy is confirmed by structural refinement inquiries
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Preparation and Performance Testing of Green Non-toxic Polishing Solution for Medical Titanium Alloy ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-17 Peiyan Zhang, Zhe Zou, Minghua Pang, Zhankui Wang
To obtain the lower toxic residue on the medical titanium alloy surface in chemical mechanical polishing process, a new green polishing solution was proposed and evaluated in this study. The humoral fluid was selected as the basic solution in which the silica abrasive particles were used for the grinding particles, and the H2O2 was added as the oxidant. A chemical mechanical polishing test was carried
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Illumination-Dependent I-V Characteristics of MgF2/Al Multilayered Photodetector ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-16 A. E. H. Gaballah, Abdallah Karmalawi, E. M. ElMoghazy
The demand for highly efficient and sensitive photodetectors has driven extensive research in the field of optoelectronics. In this study, a novel photodetector utilizing a multilayered structure based on MgF2/Al/Si is presented. The heterostructure device was fabricated using the electron beam deposition technique, and their structural, and electrical properties were thoroughly characterized. The
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Effect of Pr and Mn co-substitution on Structural and Optical Properties of Bismuth Ferrite ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-16 Sonu Rani, Mukesh Shekhar, Amar Dev, Surabhi Prasad, Manoranjan Kar, Pawan Kumar
One of the most recent developments in the area of modern optics arises due to perovskite materials. The ABO3 perovskite materials like bismuth ferrite is an appealing alternative for various optical devices. Hence, in the present study, Praseodymium (Pr) and Manganese (Mn) co-substituted bismuth ferrite ceramics are prepared by the modified sol-gel method and the correlation between structural and
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Design and Analysis of Junctionless-Based Gate All Around N+ Doped Layer Nanowire TFET Biosensor ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-15 Parveen Kumar, Balwinder Raj, Girish Wadhwa, Balwinder Singh, Raj Kumar
This work is based on the analysis and designing of Gate All Around N+ doped layer Nanowire Tunnel Field Effect Transistors (NTFET) without junctions for application in biosensor by considering the various bio molecules like uricase, proteins, biotin, streptavidin, Aminopropyl-triethoxy-silane (ATS) and many more with dielectric modulation technique and gate-all-around (GAA) environment. Device sensitivity
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Evaluating the Thermal Stability, Morphological and Temperature Effect on Electrical Conductivity, and Dielectric Properties of Curcumin Nano-Crystals ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-12 E. M. El-Menyawy, Mai Raslan, I. T. Zedan, W. M. Desoky
The thermal structure and morphology of 1,7-bis(4-hydroxy-3-methoxyphenyl)−1,6-heptadiene-3,5-dione (curcumin) nanocrystals were investigated deploying thermogravimetric and FESEM, respectively. The mass loss was identified between 509–673 K. FESEM micrographs of powder curcumin revealed a fluffy cotton-like morphology with a nearly spherical shape in nanoparticle scale. In addition, the AC conductivity
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Surface Potential Analysis of Dual Material Gate Silicon-Based Ferroelectric TFET for Biosensing Application ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-12 M. Venkatesh, P. Parthasarathy, U. Arun Kumar
By means of a dielectric modulation method, this research offers the first ever 2D analytical model for the surface potential of a dual material gate Ferroelectric-TFET (DMG-Fe-TFET) device used in an enzyme-free biosensor. Compared to a device with a single material gate, the sensitivity of a device with a gate made of two distinct metals (M1-M2) is improved by an increase in tunnelling width at the
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Ambipolarity Sensitivity Investigation using a Charge-Plasma TFET with Graphene Channel for Biomolecule Detection ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-12 Sidhartha Dash, Guru Prasad Mishra
This research proposes a label-free detection of neutral and charged biomolecules using a graphene channel-based charge-plasma tunnel field effect transistor (GC-CPTFET). The presence of a graphene channel provides a greater tunneling barrier at the channel/drain interface, significantly reducing ambipolarity and increasing the current gradient in the ambipolar condition. A nanocavity is created underneath
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Effect of Dry Etching to Improve Ohmic Contacts on Bulk, Lightly-Doped β-Ga2O3 ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-10 Chao-Ching Chiang, Jian-Sian Li, Hsiao-Hsuan Wan, Fan Ren, Stephen J. Pearton
Ti/Au is a typical Ohmic metal contact stack to n-type β-Ga2O3 but there have been few systematic studies of the use of pre-exposure of the surface to plasmas prior to metal deposition in order to lower the contact resistance. The effects of Cl2/Ar Inductively Coupled Plasma exposure of Ga2O3 surfaces prior to deposition of Ti/Au (20/80 nm) contacts were examined through circular transfer length method
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Binder-Free Flexible Chickpea Pod Derived Activated Carbon-Carbon Nanofiber Composite for Supercapacitor Application ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-10 Usha Rani Malothu, Kiran Donthula, Manohar Kakunuri, G. V. S. Nageswara Rao
In the present study, a novel carbon-carbon composite electrode was prepared by embedding activated carbon derived from chickpea pods and evaluated its potential as an electrode for supercapacitors. A simple, single-step electrospinning technique was used for the synthesis of activated carbon-carbon nanofiber composite. The synthesized activated carbon-carbon nanofiber composite electrode is flexible
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Synthesis and Optical Properties Investigation of Nanosized Two-Dimensional (Fe1−xSrx Cr2O4)/MXene Nanocomposite ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-04 Naseem Akhtar, Malika Rani, Kiran Batool, Aqeel Ahmad Shah, Mohamed A. Habila, Mika Sillanpää, Maryam Arshad, Hafiza Saba
The strontium-doped iron chromite nanoparticles were synthesized using the sol-gel method. Using the co-precipitation method, two-dimensional MXene-based nanocomposite is synthesized. This is the first synthesis of MXene with doped spinel chromites. The characterization of nanocomposite Fe1−xSrxCr2O4/MXene is done using XRD, SEM, EDS, Raman spectroscopy, photoluminescence spectrum (PL), and zeta potential
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Effect of Al Contents on Raman Spectra of MgSiO3 Perovskite ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-02 Xin Guo, JiaJie Xu, Zhipeng Sun, Fangshu Hui, Yuanyuan Liang, HeJuan Liang
To study the effect of aluminum (Al) content on the vibration properties of MgSiO3 bridgmanites, we synthesized a series of aluminous bridgmanite at pressures of 23–27 GPa, a constant temperature of 2000 K in a multi-anvil apparatus. X-ray diffraction measurement confirms that they crystallized into a single-phase bridgmanite. With increasing Al contents, wavenumbers of Raman modes of bridgmanite did
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Optimization of Sidewall Spacer Engineering at Sub-5 nm Technology Node For JL-Nanowire FET: Digital/Analog/RF/Circuit Perspective ECS J. Solid State Sci. Technol. (IF 2.2) Pub Date : 2024-01-02 Chandana Anguru, Vamsi Krishna Aryasomayajula, Venkata Ramakrishna Kotha, Sresta Valasa, Sunitha Bhukya, Narendar Vadthiya, V. Bheemudu, Sagar Kallepelli, Satish Maheshwaram, Praveen Kumar Mudidhe
This manuscript presents a performance analysis of 3-stack JL-NWFETs with different spacer materials and spacer lengths. The DC and analog/RF performance is analysed at the device level, and circuit level. In single-k spacer analysis, TiO2 exhibits lowest IOFF of ∼89.28%, and largest ION/IOFF ratio with better subthreshold performance of ∼42.51% as compared to Air spacer at Lext = 7 nm. In addition