We report the growth and fabrication of BeMgZnO/ZnO heterostructure field effect transistors (HFETs) as well as their direct current (DC) and radio frequency (RF) characterization. With a high two dimensional electron gas density of ∽8×1012 cm−2, made possible by BeO and MgO co‐alloying in the barrier, typical drain currents of 0.24 A/mm were obtained in Zn‐polar BeMgZnO/ZnO HFETs with a Be content

Phase‐change materials (PCMs) are widely used for optical data storage thanks to their fast and reversible transitions between a crystalline and an amorphous phase that exhibit reflectivity contrast. In the last decade, PCMs have been found to be promising candidates for the development of non‐volatile electronic memories, as well. In this context, superlattices of thin layers of GeTe and Sb2Te3 show

Studies of supercooled liquid phase‐change materials are important for the development of phase‐change memory and neuromorphic computing devices. Here, we use a machine‐learning‐based interatomic potential for Ge2Sb2Te5 (GST) to carry out large‐scale molecular‐dynamics simulations of liquid and supercooled liquid Ge2Sb2Te5. We demonstrate a pronounced effect of the thermostat parameters on the simulation

Vacuum deposition of transporting layers, especially hole transporting layer (HTL) is still a big challenge for the fabrication of large‐area perovskite solar cells (PSCs). Here, we fabricate efficient and large‐area PSCs using an inverted architecture and evaporate all the transporting layers in a thermal evaporation vacuum chamber. In this work, we employ poly(bis(4‐phenyl)(2,4,6‐trimethylphenyl)amine)

The influence of Sr‐doping on the rectifying characteristics of perovskite oxide La1−xSrxMnO3/Nb‐0.7 wt%‐doped SrTiO3(LSMO/NSTO) heterojunction is studied systematically. Clear rectification characteristics are observed in Au/LSMO/NSTO heterojunction with Sr‐doping rate 0.1∽0.6 at 300 K. The threshold voltage and Schottky barrier height increase linearly with the increase of Sr‐doping. Combined with

Phase‐change memory (PCM), a form of nonvolatile electrical memory based upon the local structure of chalcogenide compounds such as (Ge2Sb2Te5), is playing an ever increasing role in society. In PCM, information is stored via structure, specifically crystalline or amorphous phases. As generation of the amorphous state requires a melt‐quench process, the energy required for switching is relatively large

Phosphorus oxide (POx) capped by aluminum oxide (Al2O3), prepared by atomic layer deposition (ALD), has recently been introduced as a surface passivation scheme for planar n‐type FZ silicon. In this work, a fast pulsed‐flow plasma‐enhanced chemical vapor deposition (PECVD) process for the POx layer is introduced, making it possible to increase the POx deposition rate significantly while maintaining

For the robustness on security and ultra‐low power consumption for Internet of Things (IoT) sensors, including ultra‐miniaturization for high chip density, two dimensional multilayered ReS2 field effect transistors (FETs) combined with photo‐insensitive single‐walled carbon nanotubes (SWNT) FETs are demonstrated for the application of light‐to‐frequency (LTF) conversion circuits. In the present study

The fields of non‐linear optics, photovoltaics and thermoelectrics have been strongly impacted by materials research, and quaternary chalcogenides is one general class of materials that have recently generated strong interest. An understanding of the thermal properties is paramount in these and other applications of interest. We report on the thermal properties of BaCdSnSe4, a quaternary chalcogenide

We investigated the thermoelectric and thermal properties of an interfacial phase change memory (iPCM) device in which the resistive switching layer (RSL) is the (GeTe)2/Sb2Te3 superlattice. To clarify the effects of intralayer exchange of the GeTe layer and the van der Waals (vdW) gap in the superlattice, we focused on a device model consisting of a 10‐nm‐scale RSL connected to W(111) electrodes.

The spin photocurrent of the defective silicane based photoelectric devices has been studied by using non‐equilibrium Green's function with first‐principles density functional theory. Our calculations reveal that the silicane with H vacancy is a ferromagnetic (FM) semiconductor with a 0.27µ B magnetic moment on unhydrogenated Si atom. Due to the unique electronic structure, the directions and spin

A new technique of depositing PVA coating with airbrush on the cylindrical surface of an optical fiber with real‐time spectral monitoring is presented. The method is applied for creating hygroscopic PVA coating as a part of tilted fiber Bragg grating (TFBG)‐assisted fiber hygrometer samples. By monitoring the transmission spectra of the samples placed in a climatic chamber with variable relative humidity

Based on the coordination‐constrainted searching strategy, 48 new graphyne allotropes are discovered and systematically optimized by first‐principles calculations. Among these newly discovered 2D carbons, 127‐E20Y16‐0, 191‐E24Y24‐0, 191‐E18Y18‐0 and 191‐E24Y36‐0 with energies lower than those of the experimentally synthesized γ‐graphdiyne, β‐graphdiyne, and carbon ene‐yne are further confirmed to be

The electronic transport mechanism of nitrogen‐doped Cr2Ge2Te6 (NCrGT) phase change material (PCM) has been studied, which shows almost zero resistivity variation upon phase transition. A similar low‐temperature variable range hopping (VRH) behavior in both the amorphous and crystalline NCrGT PCM by measuring the temperature‐dependent resistivity has been observed. In high temperatures above 300 K

Herewith, we demonstrate new spin correlated‐plasmons in Pr0.6Sr0.4Co1−xMnxO3 (x = 0‐0.4) that are tunable and stable at room temperature. Using advanced spectroscopic techniques, we identify the charge‐, spin‐ and orbital‐interaction that triggers the spin‐correlated plasmons in spin‐polarized Co4+, O2− and Mn4+. As a function of x, Co4+ systematically changes their spin‐state (from high‐, intermediate‐