Owing to the simultaneously broken inversion symmetries along multiple directions, ABP2X6 (A = Cu or Ag, B = In or Bi, and X = S or Se) monolayers exhibit the coexistence of sizable piezoelectric coefficients, d 11, d 21, and d 31, under unidirectional in‐plane strains or stresses, as determined from first‐principles calculations. Remarkably, the AgBiP2S6 and AgBiP2Se6 monolayers possess d 11 coefficients

The implementation of silver nanowires as flexible transparent electrodes (FTEs) in solution processed organic light emitting diodes still faces two major challenges: high roughness of nanowire films and heat sensitivity of the most commonly used transparent substrate polyethylene terephthalate (PET). We report on a solution‐based, roll‐to‐roll and sheet‐to‐sheet scalable process to create ITO‐free

This work deals with the synthesis, structure, thermal stability, and magnetic properties of Ni4N thin films. Ni4N compound is difficult to synthesize in the correct chemical order and stoichiometry due to unfavorable thermodynamics. During the synthesis of Ni‐N thin films using reactive magnetron sputtering, we find that the substrate temperature (Ts) is a critical parameter affecting the growth of

The gate‐induced electrical instability of SnO thin‐film transistors (TFTs) with SiO2 and Al2O3/SiO2 gate dielectric layers was evaluated. The hysteresis voltage (Vhy) and threshold voltage (Vth) in the transfer characteristics of SnO TFTs depended on the sweep range and rate of gate voltage (VGS). The TFT with an Al2O3/SiO2 gate dielectric layer exhibited reduced Vhy and stable Vth compared to the

Dielectric/semiconductor interfacial p‐doping has been used to develop a high carrier mobility and balanced ambipolar tin oxide (SnO2) thin‐film transistor (TFT). To introduce this interfacial‐doping, TFTs have been fabricated by using two different ion‐conducting oxide dielectrics containing trivalent atoms. These ion‐conducting dielectrics are LiInO2 and LiGaO2 containing mobile Li+ ion that reduces