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Room-temperature sputter deposition of gold-colored TiN assisted by niobium bombardment from a bipolar HiPIMS source J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-14 Ivan Fernandez-Martinez, Rajesh Ganesan, Behnam Akhavan, David T. A. Matthews, Michael Stueber, Marcela M. M. Bilek, David. R. McKenzie
The deposition of gold-colored titanium nitride films without applying substrate heating is of significant interest due to the increasing demand for decorative coatings on temperature-sensitive three-dimensional substrates. Here, the energetic impact of Nb1+ ions during the deposition of TiN was achieved within a bipolar high-power impulse magnetron sputtering discharge operating on a Nb target. A
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Selective and nonselective plasma etching of (Al0.18Ga0.82)2O3/ Ga2O3 heterostructures J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-14 Hsiao-Hsuan Wan, Chao-Ching Chiang, Jian-Sian Li, Fan Ren, Fikadu Alema, Andrei Osinsky, Stephen J. Pearton
The addition of CHF3 to Cl2/Ar inductively coupled plasmas operating at low dc self-biases (<100 V, corresponding to incident ion energies <125 eV) leads to etch selectivity for Ga2O3 over (Al0.18Ga0.82)2O3 of >30, with a maximum value of 55. By sharp contrast, without CHF3, the etching is nonselective over a large range of source and rf chuck powers. We focused on low ion energy conditions that would
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Morphological and electrical characterization of gate recessed AlGaN/GaN high electron mobility transistor device by purge-free atomic layer etching J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-14 Christian Miersch, Sarah Seidel, Alexander Schmid, Thomas Fuhs, Johannes Heitmann, Franziska C. Beyer
An atomic layer etching (ALE) process without purge has been developed for gate recess etching of AlGaN/GaN high electron mobility transistors (HEMTs). The process consists of repeating ALE cycles where Cl2/BCl3 plasma modifies the surface by chemisorption. The modified layer is removed by the subsequential Ar ion removal step. In this manner, AlGaN/GaN HEMTs with three different gate recess etching
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Spinel LiGa5O8 prospects as ultra-wideband-gap semiconductor: Band structure, optical properties, and doping J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-13 Walter R. L. Lambrecht
LiGa5O8 in the spinel type structure is investigated as a potential ultra-wideband-gap semiconductor. The band structure is determined using the quasiparticle self-consistent GW method, and the optical properties are calculated at the Bethe Salpeter Equation level including electron-hole interaction effects. The optical gap including exciton effects and an estimate of the zero-point motion electron
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Atomic layer deposition of ZnO thin films using a liquid cyclopentadienyl-based precursor J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-13 Fumikazu Mizutani, Makoto Mizui, Nobutaka Takahashi, Mari Inoue, Toshihide Nabatame
A new compound, bis(n-propyltetramethylcyclopentadienyl)zinc [Zn(Cppm)2], was synthesized as a Zn precursor for atomic layer deposition (ALD) of ZnO films. The compound is a liquid at room temperature and is thermally stable below ∼230 °C. Although the vapor pressure of this precursor is low (1 Torr at 99 °C), it is sufficient for the material to be used in ALD. ZnO thin films were deposited on p-type
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An examination of the performance of molecular dynamics force fields: Silicon and silicon dioxide reactive ion etching J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-12 Seungbo Shim, Joseph R. Vella, Jack S. Draney, Donghyeon Na, David B. Graves
Classical molecular dynamics (MD) simulations of plasma-surface interactions were performed of physical sputtering and reactive ion etching (RIE), with predictions based on several force fields. In this paper, we focus mainly on SiO2 but include some results for Si substrates as well. We compare predictions from these MD simulations to experimental studies of SiO2 physical sputtering (by Ar+ ions)
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Characterization of elastomer degradation in O2/Ar plasma via mass and surface morphology changes J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-12 Nicholas Connolly, Michael Hysick, David E. Barlaz, Raquel Garza, Gilberto Lunardi, David N. Ruzic
The degradation of fluoroelastomer, perfluoroelastomer (FFKM), and fluorosilicone materials were compared between three O2/Ar plasma conditions: full plasma (ions plus radicals), radical only, and ion only. These elastomer materials are used extensively in plasma processing equipment used to manufacture semiconductors, and understanding the plasma environments that enhance degradation will inform material
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High throughput multiplexing reactor design for rapid screening of atomic/molecular layer deposition processes J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-12 Yuri Choe, Duncan Reece, David S. Bergsman
An approach is demonstrated for performing multiple, simultaneous depositions in a high-throughput, multiplexing atomic layer deposition/molecular layer deposition (ALD/MLD)-style reactor. Such a system allows independent processes to run in parallel by connecting more than one reaction chamber to shared resources, such as a pump and reactant manifold. Appropriate control systems for the shared resources
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Bio-tribocorrosion resistance of CoB–Co2B and Co2B layers on CoCrMo alloy J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-12 A. M. Delgado-Brito, I. Mejía-Caballero, A. D. Contla-Pacheco, R. Pérez Pasten-Borja, V. H. Castrejón-Sánchez, E. J. Hernández-Ramírez, I. Campos-Silva
Cobalt-based alloys, such as cobalt-chromium-molybdenum (CoCrMo), are known for their high mechanical strength and find extensive applications in the biomedical field such as manufacturing of tools, dental components, and orthopedic implants. The longevity of the CoCrMo alloy in service is intricately linked to its resistance to corrosion and wear. Specifically, tribocorrosion can contribute to material
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Development and evaluation of CrAlAgN self-lubricating coatings for high temperature metal forming dies J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-11 Jianliang Lin, Chia-Lin Li, Jyh-Wei Lee, Xuhai Zhang, Jingcai Xiao, Sean C. Piper
Conventional lubricants are widely used for die release as well as for cooling assistance on the die surface. However, lubrication is difficult at high temperatures. Oxidation and scaling occur on the work pieces that lead to poor surface finish and a possible warping of the material during cooling. The aim of this research is to develop self-lubricating CrAlAgN nanocomposite coatings for metal forming
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Role of the codeposited C and W element on the tribological performance of WS2 coating J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-11 Weiming Niu, Yizhuo Xu, Yuting Li, Guojuan Liu, Yifan Yao, Hao Li, Xiaojun Xu, Yan Zhou, Minhao Zhu
WS2 is a widely used solid lubricating material that exhibits applications in various fields, including automotive components, precision instruments, and key parts that require antiwear properties. However, WS2 is highly susceptible to humidity, which significantly limits its practical utility. In order to investigate and enhance the tribological and mechanical properties of WS2 coatings, a method
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Effect of additive type and amount on structural and mechanical properties of ZrO2/B4C/Al2O3/SiC added Al 1050 based composite structures produced by vacuum infiltration—Comparative study J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-11 Muharrem Pul
With this experimental study, ZrO2/B4C/Al2O3/SiC ceramics in different weight ratios were added to 99.5% pure aluminum and composites were produced by vacuum infiltration, which is very rare in the literature. It is aimed to investigate how different ceramics will affect the technical properties of an aluminum composite. First, scanning electron microscope images were taken to examine their microstructures
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ToF-SIMS analysis of ultrathin films and their fragmentation patterns J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-11 Shin Muramoto, Daniel J. Graham, David G. Castner
Organic thin films are of great interest due to their intriguing interfacial and functional properties, especially for device applications such as thin-film transistors and sensors. As their thickness approaches single nanometer thickness, characterization and interpretation of the extracted data become increasingly complex. In this study, plasma polymerization is used to construct ultrathin films
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Reliable electrical performance of β-Ga2O3 Schottky barrier diode at cryogenic temperatures J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-11 Haolan Qu, Wei Huang, Yu Zhang, Jin Sui, Jiaxiang Chen, Baile Chen, David Wei Zhang, Yuangang Wang, Yuanjie Lv, Zhihong Feng, Xinbo Zou
Electrical and trap characteristics of a large-size (2 × 2 mm2) β-Ga2O3 Schottky barrier diode (SBD) from 50 to 350 K have been reported. The ideality factor (n) decreases from 1.34 to nearly unity as temperature rises from 50 to 350 K, demonstrating near-ideal Schottky characteristics. The leakage current at cryogenic temperature (100 K) was significantly suppressed, indicating excellent off-state
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Growth of p-doped 2D-MoS2 on Al2O3 from spatial atomic layer deposition J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-11 André Maas, Kissan Mistry, Stephan Sleziona, Abdullah H. Alshehri, Hatameh Asgarimoghaddam, Kevin P. Musselman, Marika Schleberger
In this letter, we report on the synthesis of monolayers of MoS2 via chemical vapor deposition directly on thin films of Al2O3 grown by spatial atomic layer deposition. The synthesized monolayers are characterized by atomic force microscopy as well as confocal Raman and photoluminescence spectroscopies. Our data reveal that the morphology and properties of the 2D material differ strongly depending
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Damage-indicating and self-healing anticorrosion coatings based on fluorescence resonance energy transfer and photothermal shape memory mechanism J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-11 Rui Ding, Xue-qi Zhang, Jing Lv, An-lan Ji, Yu-chen Zhang, Jie Fu, Xiao Lv, Lan Yao, Sheng-ying Yang, Guo-qing Mao, Xuan Liang, Heng Yang, Jie Liu, Hai-bin Yu
Self-healing coatings, which possess the ability to repair damage and restore corrosion resistance without significant human intervention, have become a hot topic in corrosion protection research. In this paper, (±)-10-camphorsulfonic acid-doped polyaniline is synthesized and then combined with copolyurethane (copPU) to form the photothermal shape memory composite polymer (CSPA-copPU). An aggregation-induced
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Novel principal component analysis tool based on python for analysis of complex spectra of time-of-flight secondary ion mass spectrometry J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-11 Yadong Zhou, Peishi Jiang, Ping Chen, Endong Jia, Cole S. Welch, Qian Zhao, Jeffrey A. Dhas, Emily B. Graham, Xingyuan Chen, Xin Zhang, Zihua Zhu
Time-of-flight secondary ion mass spectrometry (ToF-SIMS) is a powerful surface analysis tool, which can simultaneously provide elemental, isotopic, and molecular information with part per million (ppm) sensitivity. However, each spectrum may be composed of hundreds of ion signals, which makes the spectra data complex. Principal component analysis (PCA) is a multivariate analysis technique that has
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Corrosion behavior of the NiCrAlY and NiSiAlY alloys with salt mixtures of NaCl/Na2SO4 J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-11 Haiyang Zheng, Tiancheng Cui, Bing Zhu, Xiaopeng Yu, Miao Yu
The corrosion behavior of the NiCrAlY and NiSiAlY alloys with the salt mixtures of various NaCl/Na2SO4 ratios was investigated at 750 °C. The tested alloys corroded by 100% Na2SO4, 100% NaCl and NaCl/Na2SO4 salt mixtures (75/25, 50/50, and 25/75 wt. %) exhibited distinctive resistance and behavior. The NiCrAlY alloys suffered more severe corrosion with the increasing proportion of NaCl in the salt
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Tailoring the performances of Ti-V-Al base shape memory alloys by defects engineering J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-04 Yunfei Wang, Wei Liu, Yanqing Wu, Guohao Zhang, Bin Sun, Weihong Gao, Xinxin Feng, Haizhen Wang, Xiaoyang Yi, Xianglong Meng, Zhiyong Gao
In the present study, various defects such as dislocations were controlled in Ti-V-Al-based shape memory alloy by thermomechanical treatment and introduction of interstitial oxygen (O) atom to optimize the performances. The results revealed that the Ti-V-Al-O shape memory alloys gradually evolved from α” martensite phase to the β parent phase with increasing annealing temperature. Moreover, the degree
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Effect of growth temperature on the microstructure and properties of epitaxial MoS2 monolayers grown by metalorganic chemical vapor deposition J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-04 Chen Chen, Nicholas Trainor, Shalini Kumari, Henrik Myja, Tilmar Kümmell, Zhiyu Zhang, Yuxi Zhang, Anuj Bisht, Muhtasim Ul Karim Sadaf, Najam U. Sakib, Ying Han, Thomas V. Mc Knight, Andrew R. Graves, Meghan E. Leger, Nicholas D. Redwing, Myeongok Kim, Dorota Anna Kowalczyk, Gerd Bacher, Nasim Alem, Yang Yang, Saptarshi Das, Joan M. Redwing
Metalorganic chemical vapor deposition (MOCVD) is a promising technique for wafer-scale synthesis of MoS2 monolayers for 2D field-effect transistors (2D-FETs) and related devices. Epitaxial growth of MoS2 on sapphire provides films that are crystallographically well-oriented but typically contain low-angle grain boundaries (e.g., mirror twins), voids, and other defects depending on growth conditions
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Revisitation of reactive direct current magnetron sputtering discharge: Investigation of Mg–CF4, Mg–O2, and Ti–O2 discharges by probe measurements J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-04 Eiji Kusano
The reactive direct current (DC) magnetron sputtering discharges of Mg–CF4, Mg–O2, and Ti–O2 were investigated using probe measurements as a function of reactive gas flow ratio. The emission spectroscopy, which was conducted before the probe measurements, demonstrates that all the three DC discharges transit from nonreactive to reactive discharge mode with increasing reactive gas flow ratio. The probe
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Observation of structural defects in GaN/InGaN multi-quantum wells grown on semipolar (112¯2) substrate using cathodoluminescence in transmission electron microscopy J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-01 Mi-Hyang Sheen, Yong-Hee Lee, Okhyun Nam, Young-Woon Kim
Defect structures of semipolar GaN thin film, grown on the m-plane of sapphire, were investigated using the home-built cathodoluminescence (CL) stage in TEM. The CL maps with high spatial resolution identify the type of basal plane stacking faults (BSFs) and visualize their distribution. I1-BSF type defects had the highest population and the I2-BSF type defect was revealed in the form of thin strips
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Impact of high-power impulse magnetron sputtering pulse width on the nucleation, crystallization, microstructure, and ferroelectric properties of hafnium oxide thin films J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-01 Samantha T. Jaszewski, Shelby S. Fields, Ching-Chang Chung, Jacob L. Jones, Keithen G. Orson, Petra Reinke, Jon F. Ihlefeld
The impact of the high-power impulse magnetron sputtering (HiPIMS) pulse width on the crystallization, microstructure, and ferroelectric properties of undoped HfO2 films is investigated. HfO2 films were sputtered from a hafnium metal target in an Ar/O2 atmosphere, varying the instantaneous power density by changing the HiPIMS pulse width with fixed time-averaged power and pulse frequency. The pulse
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Effect of FeCrAl sublayer composition on the microstructure and corrosion resistance of FeCrAl/yttria-stabilized zirconia composite coatings J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-02-01 Changda Zhu, Xi Qiu, Yuanming Li, Wei Zhang, Jian Yang, Yilong Zhong, Jiuguo Deng, Mingyang Zhou, Ning Liu, Jijun Yang
The effect of FeCrAl sublayer composition on the microstructure and lead-bismuth eutectic corrosion behavior of the FeCrAl/YSZ (Yttria-stabilized zirconia) composite coatings was systematically investigated by SEM and XRD. The results show that the FeCrAl sublayer as a diffusion barrier and a bonding layer is beneficial to improve the corrosion resistance of the coatings. After corrosion, a slow-growing
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Plasma nitridation for atomic layer etching of Ni J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-31 Taylor G. Smith, Ali M. Ali, Jean-François de Marneffe, Jane P. Chang
Nickel (Ni) and its alloys are important multifunctional materials for the fabrication of integrated circuits, as either the absorber for the extreme ultraviolet lithography masks and/or interconnect metals at the nanometer scale. However, these applications require that Ni to be patterned controllably, selectively, and anisotropically—requirements that can only be met with a plasma based atomic layer
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Dislocation avalanches in nanostructured molybdenum nanopillars J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-31 Haw-Wen Hsiao, Jia-Hong Huang, Jian-Min Zuo
We investigate intermittent plasticity in nanopillars of nanocrystalline molybdenum based on in situ transmission electron microscopy observations. By correlating electron imaging results with the measured nanopillar mechanical response, we demonstrate that the intermittent plasticity in nanocrystalline molybdenum is largely caused by dislocation avalanches. Electron imaging further reveals three types
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Atomic layer etching of indium tin oxide J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-30 Christoffer Kauppinen
This work presents the atomic layer etching (ALE) process for sputtered indium tin oxide (ITO) thin films using thermal surface modification with BCl3 and modified surface removal by low ion energy Ar plasma. In this approach, an elevated temperature is required for high synergy ALE due to the low volatility of indium chlorides, and 150°C is proved to be suitable. An etch per cycle (EPC) of 1.1 Å and
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Kinetic Monte Carlo study on the effect of growth conditions on the epitaxial growth of 3C–SiC (0001) vicinal surface J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-30 Xuejiang Chen, Xinyao Zhang, Wensen Ai
Due to the lack of research on the microscopic evolution process and the formation of step growth patterns for SiC crystals, it is of great importance to deepen the understanding of the epitaxial growth of a SiC vicinal surface from a microscopic point of view. In this study, a three-dimensional lattice kinetic Monte Carlo algorithm was used to study the step flow growth characteristics of SiC crystals
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Hardness, adhesion, and wear behavior of magnetron cosputtered Ti:Zr-O-N thin films J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-30 D. Cristea, A. I. Scărlătescu, G. Bulai, D. Martínez-Martínez, C. I. da Silva Oliveira, G. Yan, L. Cunha
Reactive magnetron sputtering was used to deposit Ti:Zr-O-N thin films, by using a single Zr target, with Ti ribbons placed on the erosion track of the Zr sputtering target. Zr-O-N thin films have been also deposited in the same chamber to be used as reference films. The number of Ti ribbons, the applied sputtering current, and the reactive gas flow were the variable parameters. The films were analyzed
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Surface chemistry models for low temperature Si epitaxy process simulation in a single-wafer reactor J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-29 Linda Jäckel, Andreas Zienert, Annekathrin Zeun, Anna-Sophie Seidel, Jörg Schuster
We investigate Si epitaxy using 3D reactor scale computational fluid dynamics simulations coupled with surface chemistry models for the growth of pure silicon and phosphorus-doped silicon (Si:P) films. We focus on low temperature Si and Si:P processes using dichlorosilane (DCS) and phosphine. Based on existing DCS-based Si chemistry models for higher process temperatures, we developed a new kinetic
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Exploring the thermal behavior and diffusive functionality of structural defects and phase boundaries in near-stoichiometric chromium diborides by in situ scanning transmission electron microscopy J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-29 Per O. Å. Persson, Johanna Rosen, Ivan Petrov, Justinas Palisaitis
Near-stoichiometric chromium diboride films were subject to in situ annealing inside a scanning transmission electron microscope to access the thermal behavior of the film and embedded structural planar defects. Independent of films’ stoichiometry, the planar defects were unaffected by the applied heat treatments. On the contrary, the interfaces between the boron-rich tissue phase and the CrB2 phase
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Composition dependence of intrinsic surface states and Fermi-level pinning at ternary AlxGa1−xN m-plane surfaces J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-29 Lars Freter, Liverios Lymperakis, Michael Schnedler, Holger Eisele, Lei Jin, Jianxun Liu, Qian Sun, Rafal E. Dunin-Borkowski, Philipp Ebert
Growth on nonpolar group III-nitride semiconductor surfaces has been suggested to be a remedy for avoiding detrimental polarization effects. However, the presence of intrinsic surface states within the fundamental bandgap at nonpolar surfaces leads to a Fermi-level pinning during growth, affecting the incorporation of dopants and impurities. This is further complicated by the use of ternary, e.g.,
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Spatial distribution diagnosis of electron temperature and density of argon inductively coupled plasma by tomographic optical emission spectroscopic measurement and collisional-radiative model J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-29 Yuya Yamashita, Kenta Doi, Tetsuji Kiyota, Kenta Ishi, Shuhei Watanabe, Wataru Kikuchi, Atsushi Nezu, Hiroshi Akatsuka
There are few reported cases in which the spatial distribution of spectral emission coefficients of plasmas from tomographic optical emission spectroscopy measurements is analyzed based on a collisional-radiative model to diagnose the spatial distribution electron temperature of Te and density Ne. This study aimed at in situ diagnosis of process plasma. The spectral radiance of 18 lines-of-sight was
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Cross-ionization of the sputtered flux during hybrid high power impulse/direct-current magnetron co-sputtering J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-26 Viktor Šroba, Katarína Viskupová, Bartosz Wicher, Vladyslav Rogoz, Xiao Li, Marián Mikula, Grzegorz Greczynski
Time-resolved ion mass spectrometry is used to analyze the type and the energy of metal-ion fluxes during hybrid high-power impulse/direct-current magnetron co-sputtering (HiPIMS/DCMS) in Ar. The study focuses on the effect of HiPIMS plasma plumes on the cross-ionization of the material flux sputtered from the DCMS source. Al, Si, Ti, and Hf elemental targets are used to investigate the effect of the
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Investigation of the dielectric recovery process of vacuum arc in double breaks by planar laser-induced fluorescence J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-26 Zhenxing Wang, Bo Cao, Rui Li, Liqiong Sun, Haomin Li, Yingsan Geng, Jianhua Wang
The multibreak vacuum circuit breaker uses multiple short gaps to interrupt the fault current, greatly improving the dielectric strength, and is a viable method to realize high-voltage interruption. The metal vapor distribution near the current zero is crucial for the dielectric recovery process in the multibreak vacuum circuit breaker. Due to the complicated dielectric construction and the interaction
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Diffusion and magnetization of metal adatoms on single-layer molybdenum disulfide at elevated temperatures J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-25 Mohammad Zarshenas, Davide G. Sangiovanni, Kostas Sarakinos
The present work models temperature-dependent (500−1300K) diffusion dynamics of Ag, Au, and Cu adatoms on MoS2 as well as electronic and magnetic properties of adatom (Ag, Au, and Cu)/MoS2 systems. Modeling is done by means of ab initio molecular dynamics (AIMD) simulations that account for van der Waals corrections and electronic spin degrees of freedom in the framework of density functional theory
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Cathode spot dynamics in axial magnetic fields J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-25 Jiongyu Liang, Kostadinos Tsoutas, Marcela Bilek
Cathodic arcs (CA) are important across a wide range of applications including thin film deposition and solid fuel space propulsion. Understanding how cathode spots (CSs) move in magnetic fields has important implications for the deposition rates and thrust delivered as well as cathode/fuel usage efficiency. In this work, we investigated the dynamics of cathode spot (CS) motion in the presence of various
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Effect of silicon content on the corrosion behaviors of CrAlSiN thin films deposited by magnetron co-sputtering J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-24 Bih-Show Lou, Yu-Chu Kuo, Chaur-Jeng Wang, Jyh-Wei Lee
One CrAlN and four CrAlSiN thin films containing 0.8–7.3 at. % Si were grown by a magnetron co-sputtering process using pure Cr, Al, and Si targets. The microstructure of the CrAlSiN coating changed from a coarse columnar structure to a dense and compact morphology as Si content increased from 0.8 to 7.3 at. % due to the formation of more amounts of amorphous silicon nitride phase to block the growth
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Synthesis and characterization of low-friction W-V-N alloy coatings using reactive magnetron sputtering technique for tribological applications J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-24 Akula Umamaheswara Rao, Sunil Kumar Tiwari, Archana Singh Kharb, Neha Sardana, Vipin Chawla, Sanjeev Kumar, Vikas Saxena, Amit Kumar Chawla
In recent years, self-lubricating hard coatings have garnered significant interest across various industries such as cutting tools, molds, and manufacturing because of their ability to reduce friction and wear at high temperatures in dry-cutting applications. The present study focuses on synthesis of tungsten-vanadium-nitride (W-V-N) coatings using the reactive magnetron cosputtering technique in an
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Area-selective atomic layer deposition of palladium J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-24 Himamshu C. Nallan, Xin Yang, Brennan M. Coffey, Andrei Dolocan, John G. Ekerdt
We report area-selective deposition of palladium using sequential area-blocking and area-activation ALD processes. Thermal atomic layer deposition (ALD) of palladium is investigated at 100 °C using palladium (II) hexafluoroacetylacetonate and hydrogen. Palladium deposition does not proceed at such a low temperature unless catalytic sites are present to dissociate hydrogen during Pd film nucleation
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Co-deposition of bismuth-nitrogen films on MgO (001) by molecular beam epitaxy J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-18 Ashok Shrestha, Ali Abbas, David C. Ingram, Arthur R. Smith
We attempted to grow a thin film of BiN by co-deposition of bismuth and nitrogen on rock-salt structure MgO (001) substrates. Furthermore, we studied the effect of variation of the growth temperature and the nitrogen to bismuth flux ratios on sample growth. For the samples grown and conditions used, we do not find strong evidence for the formation of a bulk Bi-N alloy. Even for very high nitrogen to
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Monolayer calibration of endofullerenes with x-ray absorption from implanted keV ion doses J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-18 Wei Chuang Lee, Lebin Yu, Johan Oscarsson, Michal W. Ochapski, Ryunosuke Sagehashi, Yang Zhang, Alexey A. Popov, Zewdu M. Gebeyehu, Leonardo Martini, Stiven Forti, Camilla Coletti, Bernard Delley, Matthias Muntwiler, Daniel Primetzhofer, Thomas Greber
X-ray absorption spectroscopy (XAS) has the highest sensitivity for chemical element detection on surfaces. With this approach, small amounts of lanthanide-containing endofullerene molecules (Ho3N@C80) have been measured by total electron yield at a low flux bending magnet beamline. The monolayer coverage is calibrated by extrapolating the signals of constant doses (3×1014 cm−2) of Ho ions implanted
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Homoepitaxial growth of CaWO4 J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-18 Hanlin Tang, Kidae Shin, Shuhang Pan, Hanshi Li, Frederick J. Walker, Charles H. Ahn
Rare-earth ion-doped dielectric crystals are a promising materials platform for quantum device applications due to their stable and highly coherent optical transitions. Recently, REIs in thin film form have become attractive because of their enhanced control of stoichiometry, lattice structure, and dimensionality. This flexibility provides a versatile host crystal environment. Control of surface and
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In situ and ex situ quantification of nanoparticle fluxes in magnetron sputter inert gas condensation: A Cu nanoparticle case study J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-17 Florian Knabl, Christine Bandl, Thomas Griesser, Christian Mitterer
Magnetron sputter inert gas condensation was coupled with quadrupole mass spectrometry for the in situ characterization of a nanoparticle beam. The proposed method allows us to determine the size distribution and the mass flux of the nanoparticles. The measured quadrupole mass spectrometer grid current is converted into a nanoparticle flux and subsequently into a mass flux. Cu nanoparticles were deposited
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Exploring the relationship between sputter-deposition conditions and electrochemical response of ZrO2 films on biodegradable MgZnCa alloy J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-17 Benjamin Millán-Ramos, José Victoria-Hernández, Dietmar Letzig, Sandra E. Rodil
In this work, we investigated the enhancement of corrosion resistance in a biodegradable Mg-0.7Zn-0.6Ca (wt. %) alloy (MgZnCa) by applying ZrO2 thin films deposited via reactive magnetron sputtering. We employed a fractional factorial experimental design to systematically examine the influence of the deposition power, deposition time, and O2 fraction on the effectiveness of the ZrO2 thin film in preventing
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Control of microstructure and composition of reactively sputtered vanadium nitride thin films based on hysteresis curves and application to microsupercapacitors J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-17 Allan Lebreton, Marie-Paule Besland, Pierre-Yves Jouan, Tatiana Signe, Cédric Mannequin, Mireille Richard-Plouet, Maryline Le Granvalet, Christophe Lethien, Thierry Brousse, Jérémy Barbé
Vanadium nitride (VN) thin films were prepared by reactive DC magnetron sputtering of a vanadium target using nitrogen as reactive gas. The structural, morphological, and compositional evolution of these films is described based on hysteresis diagrams plotting the sputtering power versus nitrogen flow rate. These diagrams, measured across various cathode voltages and discharge pressures, unveil three
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Bottom angle control mechanism and optimization of slanted gratings for optical applications J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-16 Jiuru Gao, Chanjuan Liu, Zhiwei He, Shuo Dong, Kaidong Xu, Shiwei Zhuang
Slanted gratings serve as a crucial component in the optical waveguide couplers utilized in augmented virtual reality (AVR) devices. The flat bottom surface of slanted gratings ensures excellent diffraction efficiency of the couplers. However, achieving a flat bottom surface during the fabrication process poses challenges. This study presents a comprehensive investigation on the process control of
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Processing and characterization of chalcopyrite semiconductors for photovoltaic applications J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-16 Angus Rockett
Professor Joseph “Joe” Greene taught me a great deal about research, leadership, and how to succeed. He was a mentor and a tireless advocate for me over the course of my career. This article summarizes some of the work that my research group carried out, inspired by Prof. Greene but not in direct collaboration with him. Three examples of these efforts are provided, epitaxial growth of Cu(In,Ga)Se2
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Numerical ellipsometry: Artificial intelligence for real-time, in situ absorbing film process control J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-16 F. K. Urban, D. Barton
Ellipsometry is a material analytical method in which the desired parameters, for example, film thickness and index of refraction, are related to the instrument measurements through Maxwell’s equations, light wavelength, and measurement geometry. Consequently, obtaining the desired parameters has required solving the model equations using a wide variety of methods. A commonly used method is least squares
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Micromechanical properties of micro- and nanocrystalline CVD diamond thin films with gradient microstructures and stresses J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-12 M. Meindlhumer, T. Ziegelwanger, J. Grau, H. Sternschulte, M. Sztucki, D. Steinmüller-Nethl, J. Keckes
Chemical vapor deposition produced diamonds attract considerable scientific and industrial interest due to their exceptional mechanical and functional properties. Here, hot filament (HF) chemical vapor deposition was used to synthesize two diamond thin films with different cross-sectional microstructure and residual stresses. Structural characterization by scanning electron microscopy, Raman spectroscopy
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Hydrogen absorption in an epitaxial thin film of high-entropy perovskite oxide J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-12 Takahiro Ozawa, Kaidong Wang, Kazunori Nishio, Ryota Shimizu, Taro Hitosugi, Katsuyuki Fukutani
We synthesized an epitaxial film of high-entropy perovskite oxide (HEPO) consisting of three elements (Ca, Sr, Ba) in the A site and 12 elements (Si, Ti, Cr, Mn, Fe, Co, Ni, Ge, Zr, Sn, Ce, Hf) in the B site of ABO3, and investigated hydrogen absorption properties in the HEPO film. The hydrogen depth profile was measured by nuclear reaction analysis via the 1H(15N,αγ)12C reaction, showing the hydrogen
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Thermal transport of defective β-Ga2O3 and B(In)GaO3 alloys from atomistic simulations J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-12 Xiaoning Zhang, Haoyu Dong, Chao Yang, Xi Liang, Xing Li, Jia-Yue Yang, Linhua Liu
β-Ga2O3 is a new generation of semiconductor material with a wide bandgap of 4.9 eV. However, the β-Ga2O3 devices inevitably produce defects within them after irradiation, leading to changes in their thermal conductivities. At present, the effect of radiation-damage-induced defects on thermal conductivity of β-Ga2O3 has not been carried out. Herein, we have employed molecular dynamics simulations to
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Polarized photoluminescence from Sn, Fe, and unintentionally doped β-Ga2O3 J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-11 Jacqueline Cooke, Minhan Lou, Michael A. Scarpulla, Berardi Sensale-Rodriguez
In this work, we demonstrate that β-Ga2O3 shows orientation-dependent polarized photoluminescence (PL) emission and give a comprehensive insight into gallium oxide's PL spectral properties. We characterized the polarization and spectral dependencies of both the incident and emitted light for (−201) unintentionally doped (UID) as well as (−201) and (010) Sn-doped and Fe-doped crystals. We observed for
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Vapor-phase zeolitic imidazolate framework-8 growth on fibrous polymer substrates J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-05 Rachel A. Nye, Nicholas M. Carroll, Sarah E. Morgan, Gregory N. Parsons
The use of metal-organic frameworks (MOFs) in practical applications is often hindered by synthesis related challenges. Conventional solution-based approaches rely on hazardous solvents and often form powders that are difficult to integrate into practical devices. On the other hand, vapor-phase approaches generally result in MOF films on silicon substrates that make it difficult to characterize the
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Suppression of phase segregations in Ge–Fe–Co–Ni–Mn films by high-entropy effect J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-05 Sen Sun, Wenyu Jiang, Qinxin Liu, Yueyong Jiang, Tianyi Zhu, Jie Hu, Honglian Song, Zheng Yang, Xinfeng Hui, Yuanxia Lao
Fe–Co–Ni–Mn films doped with different concentrations of Ge were prepared on the Si substrates by using radio frequency magnetron sputtering. Transmission electron microscopy (with an energy dispersive x-ray spectrometer) and an x-ray diffractometer were used to systematically study the microstructure evolution of the Fe–Co–Ni–Mn–Ge films. The results indicate that the Fe–Co–Ni–Mn films doped with
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Photoemission study of plutonium oxycarbide J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-05 Paul Roussel
Surface films of plutonium oxycarbide have shown oxidation retardation properties. The plutonium oxycarbide film analyzed in this study has a stoichiometry of PuC0.5O0.3 and is homogenous within the depth probed by x-ray photoelectron spectroscopy. The electronic structure of this plutonium oxycarbide surface film has been investigated using core level x-ray photoelectron spectroscopy and valence band
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Statistically distributed nano-scratch testing of AlFeMnNb, AlFeMnNi, and TiN/Si3N4 thin films on silicon J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-05 Ben D. Beake, Vladimir M. Vishnyakov, Stephen R. Goodes, Azadeh Taher Rahmati
For studying the damage tolerance of thin films, a novel randomly distributed nano-scratch test method was introduced and demonstrated as a promising characterization method. It is capable of more closely simulating the damage progression in abrasion, where material removal can be influenced by the interaction between damage produced by previous scratches in close proximity. In addition to studying
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Hollow-cathode plasma deposited vanadium oxide films: Metal precursor influence on growth and material properties J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-05 Adnan Mohammad, Krishna D. Joshi, Dhan Rana, Saidjafarzoda Ilhom, Barrett Wells, Boris Sinkovic, Ali K. Okyay, Necmi Biyikli
Due to its different polymorphs, including vanadium pentoxide (V2O5) and vanadium dioxide (VO2), the vanadium oxide (VOX) compound is an immensely interesting material with many important applications. While atomic layer deposition (ALD) is among the possible VOX film synthesis methods, literature reports have majorly utilized thermal-ALD, which reveals as-grown amorphous VOX films. Further post-deposition
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Sequential infiltration of two-photon polymerized 3D photonic crystals for mid-IR spectroscopic applications J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-04 Anuj Singhal, Ralu Divan, Anandvinod Dalmiya, Liliana Stan, Arian Ghiacy, Patrick T. Lynch, Igor Paprotny
Photonic crystals (PhCs) are spatially organized structures with lattice parameters equivalent to the operational wavelength of light. PhCs have been subject to extensive research efforts in the last two decades and are known for controlling light propagation with applications in sensing and time-delayed communication due to the slow-light phenomenon. Despite their exceptional properties, PhCs are
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Near-surface electronic structure in strained Ni-ferrite films: An x-ray absorption spectroscopy study J. Vac. Sci. Technol. A (IF 2.9) Pub Date : 2024-01-04 S. Saha, R. Knut, A. Gupta, F. Radu, C. Luo, O. Karis, D. A. Arena
We report on the x-ray absorption spectra (XAS) and x-ray magnetic circular dichroism (XMCD) of a series of NiFe2O4 (Ni ferrite) films grown on symmetry matched substrates and measured in two geometries: out-of-plane and near in-plane. The Ni ferrite films, grown by pulsed laser deposition, are epitaxial and the substrates used (ZnGa2O4, CoGa2O4, MgGa2O4, and MgAl2O4) introduce a systematic variation