We report on the atomic spectroscopy and laser frequency stabilization using a new type of a miniaturized glass vapor cell with a scalable thickness varying from 500 nm up to 8 μm. The cell is fabricated by lithography and etching techniques in a Pyrex glass substrate, followed by anodic bonding. It is filled with rubidium vapor using a distillation procedure. This simple and cost-effective fabrication

This paper reports high-throughput, light-based, through-focus scanning optical microscopy (TSOM) for detecting industrially relevant sub-50 nm tall nanoscale contaminants. Measurement parameter optimization to maximize the TSOM signal using optical simulations made it possible to detect the nanoscale contaminants. Atomic force and scanning electron microscopies were used as reference methods for comparison

The spin-based memory, spin transfer torque-magnetic random access memory (STT-MRAM), has the potential to enhance the power efficiency of high density memory systems. Its desirable characteristics include nonvolatility, fast operation, and long endurance. However, dry etching of MRAM structures remains a challenge as the industry is ramping up its production. In this paper, we explore the etching

Breast cancer is considered a leading health problem, especially in women, and is a major contributor to the annual worldwide cancer mortality rate. Various drawbacks and a range of side effects are faced by cancer patients undergoing the conventional cancer therapy methods that do not always result in positive and successful outcomes. Current research introducing nanomaterials into in vivo breast

We present dispersions of WS2 and h-BN using cyclohexanone and terpineol as the solvent to subsequently print prototype capacitive nanodevices. An all-inkjet-printing approach was used to print graphene-h-BN-graphene capacitors along with graphene-WS2-graphene structures. As the number of passes for inkjet printing the h-BN layer within graphene electrodes was increased, the leakage currents successively

Ion implantation is a useful method of fabricating p-type zinc oxide (ZnO) nanorods; however, it typically causes structural defects in the substrate material. Rapid thermal annealing (RTA) is a well-known annealing process in the semiconductor industry used to restore lattice defects, and it has the advantage of a fast processing time. Herein, we report on the effects of arsenic (As) implantation

Carbon based electrodes suitable for integration with CMOS readout electronics are of great importance for a variety of emerging applications. In this study, we have looked into the prerequisites for the optimized pyrolytic conversion of 3D printed polymer microstructures and nanostructures with the goal of developing sensing electrodes for a lab-on-CMOS electrochemical system. As a result, we identified

p-type GaSb metal–oxide–semiconductor capacitors with thin InAs surface capping layers were prepared on Si(001) substrates. Epitaxial structures with superlattice metamorphic buffer layers were grown by molecular beam epitaxy. Chemical surface treatment and atomic layer deposition methods were employed for a semiconductor surface passivation and Al2O3 high-k oxide fabrication, respectively. Capacitance-voltage

In this study, Si-doped conductive AlInN films with a thickness of 300 nm were grown nearly lattice-matched to c-plane GaN-on-sapphire templates by metalorganic chemical vapor deposition. A high net donor concentration of approximately 1 × 1019 cm−3 was observed for a highly Si-doped AlInN film. To evaluate its vertical-direction electrical resistivity without being affected by polarization-induced

We report a real-time investigation on the photocatalytic decomposition of methanol over Cu2O-loaded TiO2 nanotube arrays (TNAs) in high vacuum. Cu2O-loaded TNAs were fabricated using all-electrochemical processes. TNAs were prepared by anodizing Ti foils, and Cu2O nanoparticles (CNPs) were pulse-electrodeposited onto anodized TNA surfaces. The photocatalytic decomposition of methanol was monitored

Tin deposition mitigation employs hydrogen radicals and ions, formed in a hydrogen plasma, to interact with tin to form tin hydride ( Sn H 4) in the gaseous state, which is then pumped away. Surface wave plasma (SWP) technology developed at Illinois generates hydrogen radicals and ions, resulting in tin etch rates that are high enough to keep extreme ultraviolet (EUV) lithographic tools clean. An advantage

Ordered noble metal nanoparticles functionalized with organotrialkoxysilanes [e.g., 2-(3, 4-epoxycyclohexyl) ethyltrimethoxysilane (EETMS), 3-aminopropyltrimethoxysilane (APTMS), and 3-glycidoxypropyltrimethoxysilane (GPTMS)] were used as substrates to investigate the variation in fluorescence intensity of some well-known fluorophores (e.g., fluorescein, rhodamine, and l-tryptophan) based on distance

The conventional solid state reaction method was used to prepare Er3+ activated ZnTiO3-Zn2TiO4 composite phosphor. The structure, particle morphology, absorption, and photoluminescent properties were analyzed using x-ray diffraction (XRD), scanning electron microscopy (SEM), UV-Vis-NIR absorption spectrometer, and photoluminescence (PL) spectroscopy, respectively. The XRD confirmed the crystallization

Laser-cooled gases offer an alternative to tip-based methods for generating high-brightness ion beams for focused ion beam applications. These sources produce ions by photoionization of ultracold neutral atoms, where the narrow velocity distribution associated with microkelvin-level temperatures results in a very low emittance, high-brightness ion beam. In a magneto-optical trap-based ion source, the

This work explores quantitative boron depth profiling in the top first nanometer using dynamic secondary ion mass spectrometry (SIMS). Dynamic SIMS measurements were performed with a magnetic sector CAMECA IMS Wf/SC Ultra, using extremely low impact energy O2+ (below 250 eV) sputtering. It was concluded that the modification of quantification protocol by the creation of a surface transient curve can

We have investigated the fabrication process of an alternative approach for a direct integration of epitaxial structures onto a foreign substrate. Our approach is based on the synthesis of a nanocomposite made of graphenelike carbon and porous silicon. The nanocomposite was produced by anodization etching of a silicon substrate followed by a thermal carbonization step. The main study focused on the

Organic light-emitting diodes are important in display applications, but thin films used in these devices often exhibit complex and highly disordered structures. We have studied the adsorption of a typical hole transport material used in such devices, N,N′-Di-[(1-naphthyl)-N,N′-diphenyl]-1,1′-biphenyl)-4,4′-diamine (α-NPD), on the Au(111) surface. Scanning tunneling microscopy images reveal the appearance

We report exhaustive measurements of the secondary electron yield (SEY) from a gold film containing an array of micropores as a function of the angle of incidence of the primary electrons. The SEY measurements are in good agreement with Monte-Carlo (MC) simulations. A highly accurate empirical fit to the SEY data as a function of the incident electron impact angle is also proposed. In this study, the

Most current techniques for analyzing amino acids require substantial instrumentation and significant sample preprocessing. In this study, we designed, fabricated, and tested a scalable diode-based microdevice that allows for direct sensing of amino acids. The device is based on modulation-doped GaAs heterostructure with a Schottky contact on one side. The relatively high mobility and relatively small

Rectangular-shaped oxygen O2+ ion beam thinning for scanning transmission electron microscope (STEM) sample preparation was investigated using a projection ion beam optical system equipped with a duoplasmatron gas ion source. The ion current can be increased by increasing the area of the rectangular-shaped oxygen ion beam and thereby overcome the low brightness of the ion source. Rectangular-shaped

A mechanism is described for the loading and unloading of samples from an instrument housing in a way that achieves strong mechanical contact between the sample and housing. A single linear–rotary magnetically coupled feedthrough is required to effect transfer. An additional load-lock mechanism requires only a single linear magnetic feedthrough, which remains in the UHV part of the chamber. The load-lock

A novel procedure for a robust assessment of cavity deformation in Fabry–Pérot (FP) refractometers is presented. It is based on scrutinizing the difference between two pressures: one assessed by the uncharacterized refractometer and the other provided by an external pressure reference system, at a series of set pressures for two gases with dissimilar refractivity (here, He and N 2). By fitting linear

The controlled formation of dangling bond structures on a H-terminated silicon surface is the first step in an atomically precise method of fabrication of silicon quantum electronic devices. An ultrahigh vacuum scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from a Si(100)-2 ×1:H surface by injecting electrons with the sample held at a positive bias voltage. The

Tuning the magnetoresistance behavior of heterostructures composed of nonmagnetic and ferromagnetic (FM) materials is crucial for improving their applicability in electronic and spintronic devices. In this study, we investigate whether the integration of organic layers to NiFe/Pt junctions can result in the modification of the magnetic moment of the FM layer using iron phthalocyanines (FePc) and copper

Using spectroscopic ellipsometry from the midinfrared (0.03 eV) to the deep ultraviolet (6.5 eV), the authors determined the thickness dependence of the dielectric function for ZnO thin layers (5–50 nm) on Si and quartz in comparison to bulk ZnO. They observed a small blueshift of the band gap ( ∼80 meV) in thin ZnO layers due to quantum confinement, which is consistent with a simple effective mass

The authors present the results of the photoluminescence characterization of three asymmetric triple quantum well (ATQW) systems. Each one contains three ultrathin CdSe quantum wells of 1, 2, and 3 monolayers (ML) thickness grown by atomic layer epitaxy between ZnSe separating barriers. Two systems have coupled QWs due to thin 5 nm thick ZnSe separating barriers, and the uncoupled system has 100 nm

A two-dimensional electron gas (2DEG) is absent in ultrapure GaN/Al0.06Ga0.94N heterostructures grown by molecular beam epitaxy on bulk GaN at 300 K and in the dark. However, such a 2DEG can be generated by UV illumination and persists at low temperature after blanking the light. Under steady UV illumination as well as under persistence conditions, pronounced quantum transport with Shubnikov–de Haas

Novel ohmic contacts to n-ZnSe are demonstrated using single crystal Al films deposited on epitaxially grown ZnSe (100) by molecular beam epitaxy. Electron backscatter diffraction confirmed the single crystalline structure of the Al films. The (110)-oriented Al layer was rotated 45 ° relative to the substrate to match the ZnSe (100) lattice constant. The as-grown Al-ZnSe contact exhibited nearly ideal

The modification of optical and electronic properties of transition metal dichalcogenides via mechanical deformation has been widely studied. Their ability to withstand large deformations before rupture has enabled large tunability of the bandgap, and further, the spatially varying strain has been shown to control the spatial distribution of the bandgap and lead to effects such as carrier funneling

Field-effect transistors (FETs) are powerful devices in the semiconducting electronics industry and their manufacturing forms the basis of countless electronic devices. Most contemporary FETs rely on inorganic materials, mainly silicon that uses conventional photolithography, etching, and deposition techniques in sophisticated and expensive clean-room environments. An alternative route to fabricating

To fabricate AlGaN-based ultraviolet (UV) vertical cavity surface-emitting laser diodes, a pair of distributed Bragg reflectors (DBRs) having a smooth surface is desired to have a high quality factor (Q). In this work, photoassisted chemical etching (PCE) was attempted to smoothen the - c ( 000 - 2 ) AlN surface after removing the sapphire substrate by means of the laser lift-off process. First, the

Fermi level pinning at Schottky barriers strongly limits the minimization of contact resistances in devices and thereby limits the scaling of modern Si electronic devices, so it is useful to understand the full range of behaviors of Schottky barriers. The authors find that some semiconductor interfaces with compound metals like silicides have apparently weaker Fermi level pinning. This occurs as these

An underexposure photolithography method was developed to fabricate self-detached polymer micropore membranes with uniform pore size, shape, and arrangement. The key to this technique is to control and adjust the gradient of exposure dose projected into the film of photoresist. This new approach abandons sacrificial layers used in previous techniques. Negative SU-8 was chosen as an example photoresist

Focused ion beam (FIB) processing has been established as a well-suited and promising technique in R&D in nearly all fields of nanotechnology for patterning and prototyping on the micro- and nanometer scale and below. Among other concepts, liquid metal alloy ion sources (LMAISs) are one of the alternatives to conventional gallium beams to extend the FIB application field. To meet the rising demand

This report presents the results of fabricating GaN nanorods by inductively coupled plasma etching using BCl 3/Cl 2 chemistry. Interestingly, the GaN nanorods are formed only in the area initially masked by the sacrificial metal mask. In addition to the metallic mask, a specific feature of this process is the application of an insulating ceramic carrier for the improvement of the process performance

The molecular arrangement and electronic properties of submonolayer coverages of cobalt phthalocyanine (CoPc) molecules on the deactivated B-Si(111)- 3 × 3 R 30 ° surface are analyzed using scanning tunneling microscopy and spectroscopy. On the ideal surface, the dangling bonds, which typically prevent an ordered growth of molecules on semiconductors, are removed. However, the presence of single defects

Arc-discharge synthesized multiwalled carbon nanotubes (AD-MWNT), or related MWNTs, exhibit a good quality compared to the more common type of MWNT synthesized by catalytic chemical vapor deposition methods. Yet experimental measurements on these are rather few and typically have not correlated data from different measurement techniques. Here, the authors report Raman spectroscopy, scanning probe microscopy

We investigated the mechanism of premature etch stop in magnetic tunnel junction (MTJ) patterning using CO/NH3 plasma with a Ta mask to clarify the cause of etch-stop problem in high-density patterning due to mask deposition to a bottom space of a pattern. CO/NH3 plasmas consist of carbon monoxide, nitrogen, and hydrogen plasmas. To clarify the role of gas species in inducing this premature etch stop

Shaped emitters are of interest to a broad range of applications in vacuum electronic devices. In particular, thermionic energy converters (TECs) take advantage of shaped emitters to increase the local surface field, thereby extracting more current for a given cathode temperature and applied voltage. However, modeling these devices is challenging; Warp [J.-L. Vay, D. P. Grote, R. H. Cohen, and A. Friedman

A novel device consisting of a set of membranes with nine different geometries and metallizations monolithically fabricated on a single die is proposed as a possible calibration sample for characterizing thermal conductance between the tip and the sample with “active” resistive scanning thermal microscope (SThM) probes. Such probes, in which the tip is significantly heated by the current used to measure

Nanostructured multitip surfaces have sufficient potential to obtain the high emission currents necessary to develop stable and noninertial sources of free electrons with increased levels of permissible currents. The key to understanding the processes of formation and stability of macroscopic emission currents from these large area field emitters (LAFEs) is assessing the local characteristics of individual

High-current electron field emitters are of interest for many applications, but state-of-the-art devices suffer from limitations such as high turn-on macroscopic field, low macroscopic current density, poor emission stability, and short lifetime. Field emitter arrays with a high spatial density of uniform emitters have the potential to address these problems. This work presents the process development

Two-color resonant laser ionization sputtered neutral mass spectrometry offers high elemental selectivity. In this study, two-color resonance ionization in sputtered neutral Sr was confirmed by combining a grating type Ti:sapphire laser system and a time-of-flight secondary ion mass spectrometry (TOF-SIMS) system. The authors compared the ionization efficiencies of Sr of the two-color three-photon

The optimum detection levels that can be achieved by a secondary ion mass spectrometer are dependent on how efficiently a particular species of interest can be ionized and detected. One can determine in advance whether the analysis of a particular ion in the sample is possible, if the useful ion yield is known. The useful ion yield depends on the element, instrument transmission, the analytical conditions

In order to investigate the different role of kinetic and potential projectile energy for secondary ion formation, the authors have measured the ionization probability of indium atoms sputtered from a clean indium surface under irradiation with rare gas (Xeq+) ions of different charge states q at the same kinetic impact energy of 20 keV. In this energy range, the kinetic energy of the projectile is

In the framework of the development of back-side illuminated CMOS image sensors, high-resolution synchrotron tomography has demonstrated a proportionality between electromigration-induced void volumes and time-to-failure in hybrid bonding-based test structures. A new sample preparation workflow has allowed to employ synchrotron-based tomography for statistical studies and to make it a tool for routine

The timing of important events in the early history of the solar system can be established by using the decay of the short-lived radionuclide 53Mn to stable 53Cr. Carbonate minerals found in meteorite samples can be dated using this system provided that an accurate and precise value for the Mn/Cr ratio can be established. However, the ion yields of Mn and Cr vary substantially based upon the elemental

Visible light and secondary ions emitted from various sample surfaces (Si, HOPG, Cu, and Teflon) were observed after irradiation with highly charged ions (HCIs). HCIs were produced using an electron beam ion source (Kobe EBIS) at Kobe University. Visible emissions were detected using a liquid nitrogen cooled CCD detector. The mass spectrum of secondary ions was obtained using a quadrupole mass analyzer

In this work, thin epitaxial layers of dielectric barium titanate (BaTiO3 or BTO) were grown on Nb-doped strontium titanate (001) substrates using either molecular beam epitaxy or atomic layer deposition and then electrically stressed to the point of breakdown. The BTO layer thicknesses were in the range of 20–60 nm, and typical breakdown fields were in the range of 1.5–3.0 MV/cm. Electron microscopy

Andromede is a new instrument for mass spectrometry analysis of nanodomains and nano-objects present on a surface. The molecular sample information (mass and structure) is obtained from time-of-flight spectra of secondary ions emitted under the impact of nanoparticles (NPs), as A u n q + with n/q up to 200 accelerated by a 4 MV single stage electrostatic Pelletron® accelerator. Such projectiles, providing

This work considers the possible occurrence of two distinct phases in thin films of overall composition B1−xNx (0.21 ≤ x ≤ 0.47) grown by chemical vapor deposition from sequential pulses of diborane (B2H6) and ammonia (NH3). Two distinct peaks are identified in B1s x-ray photoelectron spectroscopy (XPS), related to two populations of B atoms with different oxidation states. The data are most consistent

Clearance mass flows are a major loss mechanism in dry running rotatory positive displacement vacuum pumps. Therefore, a detailed knowledge of the clearance mass flow is crucial to calculate the operation of those pumps. The small clearance heights and the large pressure range of such pumps require a wide range of gas rarefaction parameters to be taken into account. The flow in the clearance can be

A heterostructure containing several sheets of CdSe fractional monolayer quantum dots with nominal coverages of 0.5 and close to 0.25 of a monolayer (ML) embedded in a ZnSe matrix was successfully grown by a combination of submonolayer epitaxy and molecular beam epitaxy. Due to surface reconstruction properties of cation- and anion-terminated surfaces, one complete Cd–Se alternate source exposure cycle

Van der Waals layered GeTe/Sb2Te3 chalcogenide superlattices have demonstrated outstanding performance for use in dynamic resistive memories in what is known as interfacial phase change memory devices due to their low power requirement and fast switching. These devices are made from the periodic stacking of nanometer thick crystalline layers of chalcogenide phase change materials. The mechanism for

In this paper, the properties of Pd-based p-contacts on GaN-based laser diodes are discussed. Pd is often the metal of choice for ohmic contacts on p-GaN. However, for Pd/p-GaN ohmic contacts, nanovoids observed at the metal/semiconductor interface can have a negative impact on reliability and also reproducibility. The authors present a thorough analysis of the microstructure of the Pd/p-GaN interface

Managing the interaction of materials with insertion layers and nonconventional molecular beam epitaxy growth conditions allows for interfaces that are more precise but requires judicious examination of the multiple possible design variables. Here, we show a comparison between As- and Sb-containing insertion layers between Al and two binaries with different group V elements and demonstrate that antimonide

Recently, chalcogenide materials have exhibited ovonic threshold switching characteristics, improving their suitability as selector devices to effectively depress the sneak current in the cross-point array (CPA) structures. However, chalcogenides must be subjected to a firing process before they can exhibit the threshold switching behavior. The firing process causes operation problems with respect

AlN/GaN double-barrier resonant tunnel diodes have been grown by rf-plasma assisted molecular beam epitaxy at temperatures between 760 and 860 °C on metalorganic chemical vapor deposition-grown GaN templates with sapphire substrates. Room temperature negative differential resistance (NDR) was observed for all samples despite the presence of higher densities of threading dislocations in the device layers

Nanoimprint lithography (NIL) is one of the most promising nanofabrication techniques. Soft NIL has inherent advantages for conformal contact and uneven substrates. The demolding process of soft NIL is critical for obtaining high-fidelity replicas, especially of multidirectional nanostructures. In this paper, a demolding device for soft NIL is proposed to separate the polymer replica from the mold

Block copolymer (BCP) directed self-assembly (DSA) has been presented as a potential economically attractive enhancement to extend the capabilities of optical lithography for semiconductor manufacturing. One concern in DSA is the level of defectivity that can be achieved in such a process. Although entropic effects will always lead to some degree of defectivity, highly ordered structures with a low