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On the prospects of using B4C3 as a potential electrode material for lithium-ion batteries Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-13 Abdul Majid, Usama Najam, Sheraz Ahmad, Mohammad Alkhedher
Lithium-ion batteries (LIBs) served as promising energy-storage solutions for various applications, from portable electronics to electric-vehicles. There is a growing demand for high-performance electrode materials with improved storage capacity, high cyclic stability, low energy barriers, reduced material toxicity, and cost-effectiveness. This study explores the electrochemical feasibility of BC monolayer
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Regulating the chain length of phenylalkylaminium iodides to passivate inorganic perovskites Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-13 Ruiyuan Jiang, Zhixin Ren, Tingting Huang, Qiong Xu, Yuan Qiu, Huanqi Cao, Shougen Yin
Inverted inorganic perovskite solar cells (IIPSCs) have great application potential in thin-film photovoltaic fields. However, their performance is largely limited by the high trap density at the interface between perovskites and electron transport layers (ETLs). Theoretical analysis reveal that among normal phenylalkylamine passivators, phenylbutylamine (PBA) has a proper chain length to interacts
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Influence of SiO2–ZnO mixed soft abrasive on tribological behavior and polishing performance of sapphire wafer Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-12 Ziyuan Luo, Jiabin Lu, Qiusheng Yan, Da Hu, Yongze Zhou
The use of reactive soft abrasives, capable of undergoing solid-state reactions with sapphire, is a promising approach for low-damage and low-contamination machining of sapphire wafers. This study calculates the Gibbs free energy change of these chemical reactions based on thermodynamic principles. SiO–ZnO mixed soft abrasives were selected for the polishing of sapphire wafers. Friction and wear experiments
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Surface plasmon resonance and heterojunction formation in Ag/AgI/Ag3VO4 photocatalyst for efficient photodegradation of methyl orange Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-12 Linyang Bai, Zhaosheng Cai, Qi Xu
A novel Ag/AgI/AgVO plasmonic photocatalyst was synthesized through ion exchange technique, followed by photoreduction. Various techniques including X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and ultraviolet–visible diffuse reflection (UV-DRS) were undertaken to characterize the phase
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Annealing-free, electron-selective ohmic contacts using zirconium oxide and aluminum for n-type crystalline silicon solar cells Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-12 Loay Akmal Madbouly, Hisham Nasser, Mona Zolfaghari Borra, Emine Hande Ciftpinar, Gokhan Altiner, Atescan Aliefendioglu, Hasan Huseyin Canar, Rasit Turan, Husnu Emrah Unalan
The challenge of Fermi-level pinning significantly complicates the establishment of Ohmic, low-resistance contacts for lightly doped n-type crystalline silicon (c-Si), a critical requirement for economically feasible device development. In this novel study, we present an innovative approach by introducing an ultra-thin zirconium oxide (ZrO) film to achieve an Ohmic contact in n-type c-Si. The ZrO films
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Molecular dynamics study of the potential formation thickness of ultrafast laser induced sapphire crystal surface recast layer Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-12 Tongwei Liu, Zhiyong Luo
Currently, laser-induced damage is a prominent focus in the field of ultrafast laser micro/nano processing. This article focused on the potential formation thickness of the ultrafast laser-induced sapphire crystal surface recast layer. To investigate the influence of laser parameters and crystal orientation on the recast layer potential formation thickness at the atomic scale, a molecular dynamics
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Film properties affecting the photoresponsivity of polycrystalline BaSi2 films formed by radio-frequency co-sputtering Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-12 Kazuki Kido, Haruki Takenaka, Hayato Hasebe, Rui Du, Masami Mesuda, Kaoru Toko, Takashi Suemasu
Barium disilicide (BaSi) has potential applications in thin-film solar cells. Therefore, the formation of high-photoresponsivity BaSi films by large-area deposition techniques such as sputtering is of great importance for solar cell applications. Radio-frequency (RF) co-sputtering of BaSi and Ba targets was performed to form polycrystalline BaSi films with a thickness of 0.4 μm on Si(111) at 600 °C
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Comparative studies on the structural, optical and electrochemical properties of Gd, Nd and In-doped CeO2 nanostructured thin films Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-12 A. El-Habib, B. Brioual, J. Zimou, Z. Rossi, A. Marjaoui, M. Zanouni, A. Aouni, M. Jbilou, M. Diani, M. Addou
Cerium oxide nanostructured thin films, as well as their variants doped with Gadolinium (Gd), Neodymium (Nd) and Indium (In), were successfully deposited onto both glass and ITO substrates using the spray pyrolysis method. Their structural, morphological, optical, and electrochemical properties were then experimentally studied. X-ray diffraction (XRD) has confirmed the generation of a single-phase
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Porous layered ZnFe2O4/ZnO heterostructure for enhanced triethylamine detection Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-11 Qiming Yuan, Lifang He, Kui Zhang
Herein, a composite with heterogeneous porous structure composed of layered ZnFeO grown on porous ZnO sheets (ZnO/ZFO composite) was synthesized by combining facile solvothermal and solution growth methods. The effect of solution growth time on ZnO/ZFO composites morphology was investigated and their gas sensing properties was compared. The result indicated the ZnO/ZFO composites sensors, especially
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Impact of carbon injection in 4H-SiC on defect formation and minority carrier lifetime Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-11 Marianne Etzelmüller Bathen, Robert Karsthof, Augustinas Galeckas, Piyush Kumar, Andrej Yu. Kuznetsov, Ulrike Grossner, Lasse Vines
Point defects in silicon carbide (SiC) can act as charge carrier traps and have a pronounced impact on material properties such as the mobility and carrier lifetime. Prominent among these traps is the carbon vacancy (V) with a demonstrated detrimental effect on the minority carrier lifetime in 4H-SiC epitaxial layers. Hence, a variety of methods for V removal have been proposed. Common to all is that
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Analysis of barrier inhomogeneities in Ti/p–type strained Si0.95Ge0.05 Schottky diodes using reverse current-voltage characteristics Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-11 Mohammed Mamor, Khalid Bouziane, Hind Chakir, Pierre Ruterana
Extracting electrical parameters such as barrier height inhomogeneities (i) from the forward bias can be very challenging in metal/semiconductor (M/Sc) contacts characterized by low barrier height and high series resistance. In this work we demonstrate that the reverse bias characteristics can be used as an efficient alternative method to investigate the inhomogeneity of low barrier height in M/Sc
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Selective Epitaxy of Germanium on silicon for the fabrication of CMOS compatible short-wavelength infrared photodetectors Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-11 Diana Ryzhak, Agnieszka Anna Corley-Wiciak, Patrick Steglich, Yuji Yamamoto, Jacopo Frigerio, Raffaele Giani, Andrea De Iacovo, Davide Spirito, Giovanni Capellini
Here we present the selective epitaxial growth of Ge on Si using reduced pressure chemical vapor deposition on SiO/Si solid masks realized on 200 mm Si wafers, aiming at manufacturing integrated visible/short-wavelength infrared photodetectors. By a suitable choice of the reactants and of the process conditions, we demonstrated highly selective and pattern-independent growth of Ge microstructure featuring
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Soft synthesis and analysis of structural parameters upon photoactivity of visible-active BiVO4-based ternary heterojunctions Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-11 Eduardo Aguilera-Ruiz, Jorge Vazquez-Arenas, José Peral, Ulises Matías García-Pérez
CuO/Pt–BiVO and CuO/Au–BiVO photocatalysts are synthesized using a mild reducing agent (ascorbic acid) by an chemical reduction method at 25 °C. Pt and Au nanoparticles with an approximate size from 15 to 25 nm were incorporated onto BiVO powders. Crystalline phases are refined with the Rietveld method to evidence whether structural parameters contribute to enhance the photoactivity of the composites
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Improvement of warpage and leakage for 3D NAND flash memory Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-11 Kun Zhang, Wenxi Zhou, Tuo Li, Sicong Wang, Xiaomin Cheng, Zhiliang Xia, Xiangshui Miao
GLS (Gate line split) filling is a very important process in 3D NAND flash memory (3D NAND) fabrication. Filling materials in the GLS should have threefold properties, such as warpage tunability, leakage-free and low resistance. In this paper, the effects of different GLS filling materials (SiO, W, amorphous silicon: A-Si) on F-attack, warpage and resistance were studied. GLS filled with A-Si shows
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Controlled transformations by Zn-doped Co(OH)2 dandelions as a novel electrode material for pseudocapacitors Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-09 Asma Riaz, Fozia Shaheen, Manawwer Alam, Muhammad Tanveer, Qurat-ul Aain, Ghulam Nabi
The material defects induced as a result of doping can lead to crystal imperfections which may have the capability to enhance the specific performance. Here, Zn doped Co(OH) are prepared via hydrothermal process and their electrochemical performance have been measured. The Zn–Co(OH) are characterized by sophisticated characterization techniques including X-ray diffraction (XRD), scanning electron microscopy
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Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-07 Maurice Wanitzek, Michael Hack, Daniel Schwarz, Jörg Schulze, Michael Oehme
Avalanche photodiodes utilizing GeSn as an absorbing material can be used for low-light detection of telecommunication wavelengths, such as 1550 nm. We present the performance of GeSn-on-Si avalanche photodiodes at low-temperatures down to 110 K. It was found, that at temperatures above 190 K the dark current is dominated by generation-recombination due to trap states at the SiO-semiconductor interface
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Construction of S-scheme heterojunction of OVs-BiOIO3/N-CQDs/g-C3N4 for degradation of tetracycline Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-07 Hongxia Jing, Bingge Chen, Xu Wang, Jun Liu, Mingliang Wu, Xiaoming Zhang, Wangjun Pei
The proposal of S-scheme heterojunction reveals the principle of a new photocatalysis mechanism, which is superior to the effect of traditional heterojunction, and provides a strong guarantee for the development of photocatalysis technology. In this work, BiOIO rich in oxygen vacancies was obtained by a simple calcination method, and then N-CQDs were anchored to the surface of OVs-BiOIO to obtain OVs-BiOIO/N-CQDs
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Nitrogen doping concentration dependence of nitrogen incorporation kinetics during physical vapor transport growth of 4H–SiC crystals Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-07 Yuta Inoue, Wataru Tochizaki, Toshitatsu Iwai, Kazuyoshi Tanabe, Noboru Ohtani
Uniform nitrogen doping in SiC crystals is crucial for high-yield production of SiC power devices. This paper tries to provide clues to implementing uniformly nitrogen-doped 4H–SiC crystals by considering the nitrogen doping kinetics during physical vapor transport (PVT) growth of 4H–SiC crystals. We measured the doping uniformity in PVT-grown 4H–SiC crystal using Raman scattering microscopy, finding
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Unlocking the potential of effect of gamma irradiation on α-Fe2O3 nanoparticles for high-performance resistive switching applications Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-06 Shital J. Shinde, Maqsood R. Waikar, Sunny R. Gurav, Snehal L. Patil, Satyashila D. Ghongade, Azeem M. Bagwan, Aniket R. Sonkawade, Rakesh K. Sonker, Rajanish K. Kamat, Tukaram D. Dongale, Rajendra G. Sonkawade
Resistive Switching (RS) devices present a promising solution for next-generation non-volatile memories and artificial synaptic devices. This study investigates resistive switching characteristics of the α-FeO switching layer under the influence of gamma irradiation at various doses, specifically 0, 100, 200, and 300 kGy abbreviated as IO-0, IO-100, IO-200, and IO-300 respectively. The α-FeO nanoparticles
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Self-assembled Te nanowire thin film/silicon heterostructure for cost-effective and fast photoresponse in near-infrared photodetector Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-06 Xiongqing Wu, Shengmei Gao, Wenliang Liu, Kai Huang
Due to its narrow bandgap and high carrier mobility, tellurium (Te) has tremendous potential for a variety of optoelectronic applications, especially in near-infrared (NIR) photodetection. However, the long-chain helical structure of Te poses a significant challenge in effective separating of photogenerated electrons and holes, thereby impacting the overall performance of Te-based photodetectors. To
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A review of CdS photocatalytic nanomaterials: Morphology, synthesis methods, and applications Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-06 Longfei Jie, Xue Gao, Xiaoqing Cao, Shan Wu, Xiaoxing Long, Qiongyan Ma, Jixin Su
Environmental pollution, energy shortages and the greenhouse effect have become global problems. Photocatalysis has proven to be an effective means of solving these problems due to its high efficiency, energy efficiency and mild conditions. Among many semiconductor materials, CdS materials have received widespread attention and research with the advantages of simple preparation method, controlled morphology
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Effect of annealing conditions on phosphorus inward diffusion from N+ Poly-Si layer in N-type TOPCon solar cells Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-06 Qiqi Wang, Meiling Zhang, Meilin Peng, Leifei Yu, Chunxiang Lin, Lan Wang, Tingting Yan, Guilin Liu, Xi Xi
This study focused on optimizing the high-temperature crystallization annealing process in the production of TOPCon solar cells to enhance power conversion efficiency. The annealing process is employed to transform amorphous silicon into polycrystalline silicon (Poly-Si). Furthermore, during this annealing process, phosphorus atoms can form Si–P bonds to achieve effective doping in the Poly-Si layer
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Determination of effective Ga/N ratio to control GaN growth behavior in liquid-target reactive magnetron sputter epitaxy Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-05 Yi-Ling Lo, Aditya Prabaswara, Jui-Che Chang, Samiran Bairagi, Igor Zhirkov, Per Sandström, Johanna Rosen, Kenneth Järrendahl, Lars Hultman, Jens Birch, Ching-Lien Hsiao
The optimization of magnetron sputter epitaxy (MSE) for the high-volume production of high-quality GaN films is increasingly important. This study concerns the influence of key MSE process parameters - including the partial pressure of process gas, target-to-substrate distance (), and growth temperature () - for the synthesis of GaN thin films using a liquid Ga target. It is observed that the effective
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Defect engineering for improved thermal stability of sulfur hyperdoped silicon Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-05 Simon Paulus, Sören Schäfer, Patrick Mc Kearney, Tobias Niemeyer, Michael Seibt, Stefan Kontermann
Sulfur hyperdoped silicon (Si:S) is a promising material for sub-bandgap photovoltaics or infrared photodetectors. However, previous publications show that a temperature step is necessary to improve device performance. This temperature step leads to a decrease in sub-bandgap absorptance, which is a major challenge. We show a post-treatment that increases the thermal stability of Si:S in terms of sub-bandgap
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Modulating the internal electric field and carrier transfer of the flexible ATF-ECDs by inner NiOX ionic storage layers Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-04 Zigan Yang, Jinhong Ye, Rui Wang, Hongbing Zhu, Kai Shen, Meixiu Wan, Yaohua Mai
In this study, modulating the internal electric field and carrier transfer of the flexible all-thin-film electrochromic devices (ATF-ECDs) for enhancing the device performance is carried out by tailoring thickness and morphology of the nickel oxide (NiO) ionic storage layer. It is found that the charge density for flexible ATF-ECDs during electrochromic processes decreases with the NiO thicknesses
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Nd-doped porous CeO2 abrasives for chemical mechanical polishing of SiO2 films Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-04 Yongyu Fan, Jie Jiao, Lang Zhao, Jinkui Tang, Chuandong Chen, Na Fan
Chemical mechanical polishing (CMP) is a crucial step in integrated circuit manufacturing, and as chip feature sizes continue to shrink, there is an escalating demand for improved polishing performance. In this study, monodisperse porous CeO nanospheres were synthesized and then modified through Nd doping. The structural and chemical characterization confirmed the enrichment effect on surface defects
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Theoretical modeling of strain-coupled nanomechanical pillar resonators Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-02 Inah Yeo, Il Ki Han
Semiconducting pillar structures have emerged as a versatile platform owing to their excellent optical performances and multiple functionalities, which enable their seamless integrations into hybrid nanodevices. The pillar cavities can be coupled to a wide variety of spin, charge, acoustic, excitonic, polaritonic, electromagnetic, or mechanical degrees of freedom as a universal building block for hybrid
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Construction of amorphous/crystalline Z-scheme heterojunctions in 2D/2D novel B-g-C3N4/BiOBr for efficient and stable degradation of tetracycline hydrochloride Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-02 Haonan Wang, Mingkun Wu, Yao Chen, Junhui Wang, Minguang Fan, Lihui Dong, Bin Li, Zhengjun Chen
2D/2D heterostructure is considered an effective strategy to improve photocatalytic performance because of its unique contact form and more surface-active site. Owing to the different and fixed surface structures of different crystalline materials, however, the percentage of heterojunction formation between them is low, which in turn limits the applications. In contrast, the amorphous state has the
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Comparative study of photoinduced wettability and photocatalytic activity in different crystalline Ga2O3 phases Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-02 Sunjae Kim, Ji-Hyeon Park, Hyoung Woo Kim, Dae-Woo Jeon, Wan Sik Hwang
The photoinduced wettability and photocatalytic activity of single-crystalline β-GaO (s-GaO), poly-crystalline β-GaO (p-GaO), and amorphous GaO (a-GaO) are investigated under ultraviolet C irradiation, and their results are compared. β-GaO has gained attention in photocatalytic applications due to its excellent thermodynamic stability and indirect bandgap properties. The s-GaO shows the highest efficiency
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Superior dielectric stability and dynamic infrared radiation by optimizing the concentration of Nd3+ ion in A-site and aliovalent ion in B-site of NBBT ferroelectric perovskite systems Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-02 G. Sudha, N. Karunagaran
The dynamic narrow system of ceramic [NaBiNd]BaTiNbO (NBBTN: xNd) samples of Morphotropic Phase Boundary (MPB) compositions synthesized by traditional mixed oxide route reaction. A systematic investigation demonstrated that the introduction of Nd ions improves relaxor behavior and decreases the tolerance factor. XPS studies reveal that oxygen vacancies are present and have a role in relaxation processes
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High entropy enhanced phase& structural stability and high electromagnetic wave absorption in CsPbBr3 perovskite Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-02 Qiuling Chen, Lele Chen, Wenlei Shuai, Baoji Miao
Developing stable and efficient electromagnetic wave absorption (EMA) materials has attracted much attentions. In this study, transition metal high entropy engineering was conducted on CsMBr perovskite. The influence of high-entropy on phase transition, thermal stability, structural modification and magnetic, dielectric properties were studied using Rietveld and Grazing-Incidence Wide-Angle Scattering
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Control of hole concentration in sputter-deposited BaSi2 films by B implantation and its application to p-BaSi2/n-Si solar cells Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-02 Takumi Sato, Sho Aonuki, Haruki Takenaka, Rui Du, Kazuki Kido, Hayato Hasebe, Shunsuke Narita, Yoichiro Koda, Masami Mesuda, Kaoru Toko, Takashi Suemasu
Barium disilicide (BaSi) has potential applications in thin-film solar cells; hence, it is important to control the carrier type and carrier concentration of BaSi films formed by large-area deposition techniques such as sputtering. However, neither n-type nor p-type impurity-doped BaSi films have been achieved by sputtering. In this work, we formed 0.2 μm-thick BaSi films on Si(111) substrates by sputtering
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Constructing a narrow band gap ZnIn2S4/Fe2O3 Z-scheme heterojunction for improving degradation activity of atrazine and methylene blue Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-02 Meng Wang, Yanan Feng, Qingqiang Meng, Guoqiang Xu, Ying Zhang
It was crucial to improve the photogenerated charge separation in order to enhance the photocatalytic activity for organic pollutants degradation. In this paper, a narrow band gap ZnInS/FeO direct Z-scheme heterojunction was synthesized for the photocatalytic degradation of atrazine (ATZ) and methylene blue (MB) under visible light irradiation. Results showed that the ZnInS/FeO displayed the higher
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Mechanistic insights into chromium ions-doped lithium zinc borate nanosheet photocatalysis for mineral pollutant removal Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-01 R. Naveen, M.C. Rao, Ravindranadh Koutavarapu, Mohan Rao Tamtam
Metal borates have emerged as promising materials in various applications, including photocatalysis and energy storage, due to their exceptional functional properties. Utilizing the in-situ hydrothermal method, a novel approach was employed to produce nanosheets of chromium ions-doped LiZnBO (Cr-doped LZB) without relying on surfactants or templates. Various doping concentrations (1, 3, and 5 mol%)
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Novel self-assembled graphene oxide coating by atmospheric pressure plasma jet Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-01 José Antonio Cabello Mendez, José de Jesús Pérez Bueno, Yunny Meas Vong, David Meneses Rodríguez, José Trinidad Pérez Quiroz, Abraham López Miguel
A new and simple method of deposition of graphene oxide-based coatings using an atmospheric pressure plasma jet is reported in this work. This new deposition method incorporates an ultrasonic fog of graphene oxide aqueous solution towards the plasma zone. The morphological, chemical, optical, and electrochemical properties of the coating were studied. The results show that the deposition process is
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Structural and electrical investigation of Al/Ti/TiN/Au based N-face n-GaN contact stack Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-01 Zsolt Fogarassy, Aleksandra Wójcicka, Ildikó Cora, Adel Sarolta Rácz, Szymon Grzanka, Erzsébet Dodony, Piotr Perlin, Michał A. Borysiewicz
In this work, the structure of Ti/Al/TiN/Au contact layer stack on the N-face of a single-crystal n-GaN substrate is studied after heat treatment at 750 °C. Since TiN is widely regarded as a diffusion barrier in the stack, the formed structures with three different initial TiN thicknesses (15, 60 and 90 nm) in the contact layers are investigated in detail. The primary tool used for the structural investigations
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Tailoring the structural, electronic and transport characteristics of zigzag BP nanoribbons with edge passivations Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-01 Ankita Nemu, Neeraj K. Jaiswal
Nanoribbons exhibit peculiar electron confinements which could be further tuned via controlled edge passivations. In this direction, we used density functional theory (DFT) to reveal the structural, electronic and transport characteristics of zigzag BP nanoribbons (ZBPNR) having various possible edge passivations with H and/or F. We categorized the considered nanoribbons in different groups depending
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Study on P-a-Si:H properties of N-type heterogeneous junction solar cells manufactured by large-area parallel plate PECVD machine Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-03-01 Xinpu Li, Yue Li, Lei Hu, Chunlin Guo, Jiawang Chen, Xing Li, Rui Jia, Baojie Yan, Ke Tao, Danni Zhang
P-type hydrogenated amorphous silicon (P-a-Si:H) plays an important role in heterojunction solar cells. On the one hand, P-a-Si:H processed by plasma enhanced vapor deposition (PECVD) can selectively collect carrier holes on the rear of N-type silicon based heterojunctions with intrinsic thin layer (HJT) solar cells (in this article, the back ride of the cell is P-a-Si:H); On the other hand, the ohmic
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Revisiting stacking fault identification based on the characteristic photoluminescence emission wavelengths of silicon carbide epitaxial wafers Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-29 Moonkyong Na, Wook Bahng, Hyundon Jung, Chanhyoung Oh, Donghyun Jang, Soon-Ku Hong
We revisited stacking fault identification based on the characteristic photoluminescence emission wavelengths of 4H–SiC epitaxial wafers, and we investigated 50 000 stacking faults in 70 4H–SiC wafers using wafer-level photoluminescence mapping. The characteristic photoluminescence spectra of each type of stacking fault were obtained and analyzed using high-angle annular dark-field (HAADF) high-resolution
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Electroless deposition of high-uniformity nickel microbumps with ultrahigh resolution of 8 μm pitch for monolithic Micro-LED display Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-29 Yu Lu, Chang Lin, Liang Tian, Shuaishuai Wang, Kaixin Zhang, Taifu Lang, Yang Li, Qiwei Li, Tianxi Yang, Zhonghang Huang, Jie Sun, Qun Yan
Micro-light-emitting diode (Micro-LED) displays have attracted growing attention due to their unsurpassed properties that satisfy the requirements of reality/virtual reality (AR/VR) displays. A crucial procedure of monolithic integration technology in high-density microdisplays is the interconnection process, which is intimately associated with the quality of the display device. Microfluidic electroless
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The effect of non-ionic surfactants on the removal of cerium oxide particles in STI CMP post cleaning Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-29 Xinyu Zhao, Mei Yan, FangYuan Wang, Xinyu Han, Baimei Tan, Jiadong Zhao, Renhao Liu, Yunhui Shi
Ceria abrasives are widely used in shallow trench isolation (STI) chemical mechanical polishing (CMP) processes due to their ability to form Ce––Si bonds with SiO. However, they are also extremely susceptible to absorbing on the wafer surface to form contaminants, which in turn affects the reliability and stability of the devices. Therefore, the removal of ceria particles in the post-CMP cleaning process
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Computational insight on CsPbX3 (X = Cl, Br, I) and two-dimensional MYZ (M = Mo, W; YZ = Se, S) heterostructures Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-28 Abdul Jalil, Hafsah Ashraf, Simeon Agathopoulos, Arooba Kanwal, Waqar Mahmood, Syed Raza Ali Raza
Since two-dimensional transition metal dichalcogenides (TMDs) and halide-based perovskites display superior optoelectronic properties, interfacing of TMDs and Janus materials with halide perovskites may improve the performance of photovoltaics and photodetectors. Using first-principles computations, this work thoroughly analyzes the electronic as well as optical properties of 2D CsPbX/MYZ composites
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Electrochemical properties of lithium metal doped C60 fullerene for battery applications Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-28 Naveen Kosar, Moneeba Asgar, Tariq Mahmood, Khurshid Ayub, Hasnain Sajid, Munirah D. Albaqami, Mazhar Amjad Gilani
The development of anode materials with an optimum cell voltage and better stability is an important challenge for high-performance Li-ion batteries. In this study, we have investigated the electrochemical potential of pristine and Li-doped C fullerene through density functional theory (DFT) simulations, with a focus on their potential applications in lithium-ion batteries. Our findings reveal that
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Effect on the electrical properties of flexible solar cells influenced by mechanical bending Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-28 Sungjun Kim, Jeha Kim
The effect of cyclic bending on the electrical properties of a flexible CuZnSn(S,Se) (CZTSSe) solar cell fabricated on a Mo foil was investigated at curvature radii of 35 and 50 mm. The device parameters obtained from the current–voltage curves of the solar cell were analyzed as a function of the number of bending cycles . The sample was fabricated using two types of Mo foil substrates in the “perpendicular”
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Characterization of nitrided SiC(1 1‾ 00) MOS structures by means of electrical measurements and X-ray photoelectron spectroscopy Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-28 Takuma Kobayashi, Asato Suzuki, Takato Nakanuma, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe
Interface nitridation in nitric oxide is a standard technique for improving the performance of silicon carbide (SiC) metal-oxide-semiconductor (MOS) devices. In this study, we focused on m-face SiC MOS structures and investigated the impact of nitridation by means of electrical measurements and X-ray photoelectron spectroscopy (XPS). Gate leakage characteristics were measured in a wide temperature
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Preparation and performance study of electroplated Ni–W/diamond ultrathin dicing blades Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-28 Lan Zhang, Hongyang Yu, Huizhong Ma
In this study, Ni–W/diamond ultrathin dicing blades with various tungsten contents were fabricated using a composite electrodeposition technique by adding different concentrations of sodium tungstate to a nickel sulfamate plating solution utilizing a self-developed cathodic autorotating plating apparatus. The results showed that the tungsten content in the dicing blades increased, the deposition rate
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Study on the effect of melt flow behavior on the uniformity of phosphorus doping during the growth of large-size n-type monocrystalline silicon by Czochralski method Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-27 Zhenling Huang, Liang Zhao, Tai Li, Jiaming Kang, Xiang Zhou, Shaoyuan Li, Wenhui Ma, Guoqiang Lv, Yongsheng Ren
The segregation effect of phosphorus during the Czochralski growth of large-size n-type monocrystalline silicon contributes to the poor uniformity of radial resistivitys which directly affects the local electrical properties of the photovoltaic device. In the current work, a two-dimensional unsteady model was adopted to investigate the numerical simulation of the growth process of 300 mm industrial
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Humidity enhanced ammonia gas sensing by Ga2O3/MWCNT nanocomposite at room temperature Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-26 Madhura N. Talwar, Akshatha Gangadhar, Mathankumar Manoharan, R. Manimozhi, S. Srikantaswamy, R.T. Rajendra Kumar, A.P. Gnana Prakash
Gallium oxide (GaO) and multi-walled carbon nanotubes (MWCNT) were synthesized by hydrothermal and chemical vapor deposition (CVD) techniques respectively. The physical method is adopted to obtain the composite of GaO/MWCNTs with varying concentration of MWCNT. The GaO/MWCNT is characterized using field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and Raman spectroscopy. XRD
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Effects of proton implantation into 4H-SiC substrate: Stacking faults in epilayer on the substrate Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-24 Masashi Kato, Ohga Watanabe, Shunta Harada, Hitoshi Sakane
This study explored proton implantation into 4H-SiC substrates to suppress the expansion of single Shockley stacking faults (SSSFs), which is a source of bipolar degradation in 4H-SiC devices. While previous research has demonstrated the effectiveness of proton implantation in epitaxial layers, concerns about defect generation have persisted. Therefore, we implanted protons into 4H-SiC substrates,
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Recyclable magnetic Fe3O4@SiO2/C3N5 photocatalyst with enhanced H2 production and organic pollutant degradation performance Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-24 Jingxuan Yang, Yanan Gao, Xinfeng Li, Yajie Wang, Pengli Guan, Bin Liu
The photocatalytic property of graphitic carbon nitride (CN) has attracted more and more attention. In this study, to provide a convenient way to recycle the suspension catalyst of CN, CN nanoparticles had been successfully coated on the surface of SiO@FeO (S@F) core-shell layer, forming a novel multifunctional nano-core-shell magnetic material FeO@SiO/CN. The as-prepared photocatalyst could effectively
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Mechanism analysis and process optimization of nanogrinding single-crystal SiC Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-24 Jiangnan Xia, Qiusheng Yan, Jisheng Pan, Lijie Wu, Yuanjing Chen, Tao Wang
The aim of this study is to investigate the effects of various process parameters (the grinding-wheel speed, feed rate, workpiece speed, spark-out grinding time, and grinding-wheel granularity) on the surface quality of single-crystal SiC during nanogrinding while concurrently analysing the grinding mechanism and optimising the overall process. Experiments are performed to investigate the macrotexture
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Investigation of linear and nonlinear optical characterization of triple blended polymers incorporated with varying content of eriochrome black T dye for low-cost optical technologies and limiting absorption Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-24 Doaa A. Nasrallah, T.H. AlAbdulaal, H.Y. Zahran, I.S. Yahia, M.I. Mohammed
In this current research, polyvinyl alcohol (PVA)/polyethylene glycol (PEG)/methylcellulose (MC), (PVA-PEG-MC), (8:1:1) blend composite films reinforced with varying loadings of Eriochrome Black T dye were formed via a solution casting methodology. X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), and Ultraviolet–visible (UV–vis) spectroscopy were applied to examine the influence
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Highly optical anisotropy, electronic and thermodynamic properties of the topological flat bands Kagome Nb3Cl8 Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-24 A. Bouhmouche, A. Jabar, I. Rhrissi, R. Moubah
This study showcases the intriguing electronic, optical, and thermodynamic properties of NbCl, an exceptional class of two-dimensional (2D) crystalline materials renowned for their Kagome structure and an exceptional band arrangement featuring remarkably flat energy bands. NbCl was found to be a semiconductor with a narrow bandgap energy of 1.23 eV. Our study reveals pronounced anisotropic behavior
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Effective, reusable and low energy visible light responsive free-standing CdS/PVDF nanocomposite films for MG dye degradation Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-23 Sh. Anju Devi, K. Jugeshwar Singh, K. Nomita Devi
Immobilization of powdered nanoparticles within a polymer matrix is considered a practical solution to address the challenge of the difficult recovery of the material after the photodegradation experiment. For the first time, this paper reports a low-energy visible light-driven photocatalytic degradation of Malachite Green dye utilizing free-standing CdS/PVDF nanocomposite films. The efficiency of
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Strain behavior and dopant activation of heavily in-situ B-doped SiGe epitaxial films treated by nanosecond laser annealing Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-23 Chunghee Jo, Kiseok Lee, Dongmin Yoon, Dae-Hong Ko
Heavily doped epitaxial films with an active dopant concentration over 1 × 10/cm in the source/drain regions are key requirements for advanced metal-oxide-semiconductor field-effect transistors (MOSFETs) with ultralow contact resistance. In this study, we investigated the microstructure, strain characteristic, and electrical property with dopant behavior of heavily B-doped (ISBD) SiGe films (chemical
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Electron emission from alignment-controlled multiple stacks of SiGe nanodots embedded in Si structures Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-22 Katsunori Makihara, Yuji Yamamoto, Hiroya Yagi, Lingrui Li, Noriyuki Taoka, Bernd Tillack, Seiichi Miyazaki
We fabricated a vertically aligned and staggered structure comprising 20–stacking layers of SiGe–nanodots (NDs) embedded in Si via reduced–pressure chemical vapor deposition and investigated their electron emission properties. The SiGe–NDs with a 35% Ge content were deposited using SiH–GeH, while Si spacers were deposited using SiH or SiHCl to control a 3D–alignment of staggered or dot–on–dot structure
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Cu2O/SiC photocatalytic reduction of carbon dioxide to methanol using visible light on InTaO4 Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-22 Babalola Aisosa Oni, Samuel Eshorame Sanni, Olusegun Stanley Tomomewo, Shree Om Bade
Photo-catalytic reduction of CO to methanol is a direct path to producing energy from the sun. The production of methanol via photocatalytic reduction of CO using a modified catalyst was investigated. The photo-catalytic reduction of CO to methanol is considered a direct path to producing energy from the sun since it involves using solar energy to drive a chemical reaction that converts CO into methanol
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Al–Ge-paste-induced liquid phase epitaxy of Si-rich SiGe(111) for epitaxial Co-based Heusler alloys Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-21 Michihiro Yamada, Shota Suzuki, Ai I. Osaka, Kazuaki Sumi, Takahiro Inoue, Azusa N. Hattori, Shinya Yamada, Kentarou Sawano, Marwan Dhamrin, Kohei Hamaya
For high-performance spintronic applications with Co-based Heusler alloys, we explore SiGe(111) grown by liquid phase epitaxy (LPE) with Al–Ge mixed paste, where is the Ge content. By annealing the screen printed Al–Ge paste on a Si(111) substrate, a continuous SiGe(111) layer with a smooth interface between the SiGe layer and Si substrate is epitaxially grown. The surface with residual paste is polished
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An efficient sensor for SF6 decomposition products by TiO2 decorated α-AsP monolayer: Theoretically evaluating GIS device safety Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-21 Tengfei Wang, Junkai Wang, Xiaolei Li, Xuehai Ju
The efficient detection of sulfur hexafluoride (SF) has become an important means for the stability and security of gas-insulated switchgear (GIS) devices. In this paper, we theoretically researched the possibility of α-AsP monolayer and TiO-decorated α-AsP detecting SF decomposition gases using the DFT calculations. Firstly, we verified the stability of TiO–AsP monolayer. The geometric configurations
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TCAD modeling and simulation of self-limiting oxide growth and boron segregation during vertical silicon nanowire processing Mater. Sci. Semicond. Proc. (IF 4.1) Pub Date : 2024-02-20 Chiara Rossi, Jonas Müller, Peter Pichler, Paweł Piotr Michałowski, Guilhem Larrieu
Thermal oxidation is a key step for the fabrication of vertical gate-all-around nanowire field-effect transistors (GAA-NW-FETs). It is used after the etching of nanopillars from the silicon substrate to further thin the nanowire diameter, remove the etching damage and have good control of the geometry. It can also be used to grow a gate oxide. Thermal oxidation of silicon nanowires is a self-limiting