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  • Reversible Graphene decoupling by NaCl photo-dissociation.
    2D Mater. (IF 7.343) Pub Date : 2019-04-16
    I Palacio,L Aballe,M Foerster,D G de Oteyza,M García-Hernández,J A Martín-Gago

    We describe the reversible intercalation of Na under graphene on Ir(111) by photo-dissociation of a previously adsorbed NaCl overlayer. After room temperature evaporation, NaCl adsorbs on top of graphene forming a bilayer. With a combination of electron diffraction and photoemission techniques we demonstrate that the NaCl overlayer dissociates upon a short exposure to an X-ray beam. As a result, chlorine

    更新日期:2019-11-01
  • Large-area synthesis of high-quality monolayer 1T'-WTe2 flakes.
    2D Mater. (IF 7.343) Pub Date : 2018-05-01
    Carl H Naylor,William M Parkin,Zhaoli Gao,Hojin Kang,Mehmet Noyan,Robert B Wexler,Liang Z Tan,Youngkuk Kim,Christopher E Kehayias,Frank Streller,Yu Ren Zhou,Robert Carpick,Zhengtang Luo,Yung Woo Park,Andrew M Rappe,Marija Drndić,James M Kikkawa,A T Charlie Johnson

    Large-area growth of monolayer films of the transition metal dichalcogenides is of the utmost importance in this rapidly advancing research area. The mechanical exfoliation method offers high quality monolayer material but it is a problematic approach when applied to materials that are not air stable. One important example is 1T'-WTe2, which in multilayer form is reported to possess a large non saturating

    更新日期:2019-11-01
  • Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene.
    2D Mater. (IF 7.343) Pub Date : 2018-03-17
    Albert F Rigosi,Heather M Hill,Nicholas R Glavin,Sujitra J Pookpanratana,Yanfei Yang,Alexander G Boosalis,Jiuning Hu,Anthony Rice,Andrew A Allerman,Nhan V Nguyen,Christina A Hacker,Randolph E Elmquist,Angela R Hight Walker,David B Newell

    Monolayer epitaxial graphene (EG), grown on the Si face of SiC, is an advantageous material for a variety of electronic and optical applications. EG forms as a single crystal over millimeter-scale areas and consequently, the large scale single crystal can be utilized as a template for growth of other materials. In this work, we present the use of EG as a template to form millimeter-scale amorphous

    更新日期:2019-11-01
  • Trion Valley Coherence in Monolayer Semiconductors.
    2D Mater. (IF 7.343) Pub Date : 2017-09-20
    Kai Hao,Lixiang Xu,Fengcheng Wu,Philipp Nagler,Kha Tran,Xin Ma,Christian Schüller,Tobias Korn,Allan H MacDonald,Galan Moody,Xiaoqin Li

    The emerging field of valleytronics aims to exploit the valley pseudospin of electrons residing near Bloch band extrema as an information carrier. Recent experiments demonstrating optical generation and manipulation of exciton valley coherence (the superposition of electron-hole pairs at opposite valleys) in monolayer transition metal dichalcogenides (TMDs) provide a critical step towards control of

    更新日期:2019-11-01
  • Temperature dependence of electron density and electron-electron interactions in monolayer epitaxial graphene grown on SiC.
    2D Mater. (IF 7.343) Pub Date : 2017-08-05
    Chieh-Wen Liu,Chiashain Chuang,Yanfei Yang,Randolph E Elmquist,Yi-Ju Ho,Hsin-Yen Lee,Chi-Te Liang

    We report carrier density measurements and electron-electron (e-e) interactions in monolayer epitaxial graphene grown on SiC. The temperature (T)-independent carrier density determined from the Shubnikov-de Haas (SdH) oscillations clearly demonstrates that the observed logarithmic temperature dependence of Hall slope in our system must be due to e-e interactions. Since the electron density determined

    更新日期:2019-11-01
  • Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition.
    2D Mater. (IF 7.343) Pub Date : 2017-01-11
    R Muñoz,C Munuera,J I Martínez,J Azpeitia,C Gómez-Aleixandre,M García-Hernández

    Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650°C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain

    更新日期:2019-11-01
  • Controlling the layer localization of gapless states in bilayer graphene with a gate voltage.
    2D Mater. (IF 7.343) Pub Date : 2018-01-01
    W Jaskólski,M Pelc,Garnett W Bryant,Leonor Chico,A Ayuela

    Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied gate

    更新日期:2018-01-01
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