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  • Orbitally-resolved ferromagnetism of monolayer CrI 3
    2D Mater. (IF 7.14) Pub Date : 2020-03-03
    I V Kashin, V V Mazurenko, M I Katsnelson and A N Rudenko

    Few-layer CrI 3 is the most known example among two-dimensional (2D) ferromagnets, which have attracted growing interest in recent years. Despite considerable efforts and progress in understanding the properties of 2D magnets both from theory and experiment, the mechanism behind the formation of in-plane magnetic ordering in chromium halides is still under debate. Here, we propose a microscopic orbitally-resolved

    更新日期:2020-03-04
  • Optimizing Dirac fermions quasi-confinement by potential smoothness engineering
    2D Mater. (IF 7.14) Pub Date : 2020-03-03
    B Brun, N Moreau, S Somanchi, V-H Nguyen, A Mreńca-Kolasińska, K Watanabe, T Taniguchi, J-C Charlier, C Stampfer and B Hackens

    With the advent of high mobility encapsulated graphene devices, new electronic components ruled by Dirac fermions optics have been envisioned and realized. The main building blocks of electron-optics devices are gate-defined p–n junctions, which guide, transmit and refract graphene charge carriers, just like prisms and lenses in optics. The reflection and transmission are governed by the p–n junction

    更新日期:2020-03-04
  • Heterostructural one-unit-cell FeSe/SrTiO 3 : from high-temperature superconductivity to topological states
    2D Mater. (IF 7.14) Pub Date : 2020-03-03
    Chaofei Liu and Jian Wang

    High-temperature superconductivity in one-unit-cell (1-UC) FeSe/SrTiO 3 heterostructure has become a research frontier in condensed-matter physics and material science. The superconducting transition temperature ( T c ) of ultrathin FeSe film is significantly enhanced compared to its bulk counterpart and possibly approaches the liquid-nitrogen region according to in situ spectroscopic measurements

    更新日期:2020-03-04
  • Transfer assembly for two-dimensional van der Waals heterostructures
    2D Mater. (IF 7.14) Pub Date : 2020-02-28
    Sidi Fan, Quoc An Vu, Minh Dao Tran, Subash Adhikari and Young Hee Lee

    Two-dimensional (2D) van der Waals (vdW) heterostructures with pre-determined properties are key ingredients for the success of advanced electronics and optoelectronics. The construction of vdW heterostructures is a prerequisite to obtain the desired performance with high quality. A typical dry/wet transfer technique is a promising route to physically stack vdW heterostructures via a gentle-energy

    更新日期:2020-03-04
  • Van der Waals metallic alloy contacts for multifunctional devices
    2D Mater. (IF 7.14) Pub Date : 2020-02-28
    Kai Xu, Zijing Zhao, Xiaolin Wu and Wenjuan Zhu

    Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier at the contacts because of the strong Fermi-level pinning at the metal-semiconductor interface. Here, we demonstrate that 2D metallic Mo 1− x W x Te 2 alloy, bonded to the 2D semiconductor channel MoTe 2 via van der Waals (vdW)

    更新日期:2020-03-04
  • A system for the deterministic transfer of 2D materials under inert environmental conditions
    2D Mater. (IF 7.14) Pub Date : 2020-02-28
    Patricia Gant, Felix Carrascoso, Qinghua Zhao, Yu Kyoung Ryu, Michael Seitz, Ferry Prins, Riccardo Frisenda and Andres Castellanos-Gomez

    The isolation of air-sensitive two-dimensional (2D) materials and the race to achieve a better control of the interfaces in van der Waals heterostructures has pushed the scientific community towards the development of experimental setups that allow to exfoliate and transfer 2D materials under inert atmospheric conditions. These systems are typically based on over pressurized N 2 of Ar gloveboxes that

    更新日期:2020-03-04
  • Printable and flexible graphene pH sensors utilising thin film melanin for physiological applications
    2D Mater. (IF 7.14) Pub Date : 2020-02-28
    Z Tehrani, S P Whelan, A B Mostert, J V Paulin, M M Ali, E Daghigh Ahmadi, C F O Graeff, O J Guy and D T Gethin

    The application of highly sensitive pH sensors manufactured in volume at low cost has great commercial interest due to an extensive array of potential applications. Such areas include industrial processing, biotechnology and medical diagnostics particularly in the development of point of care (POC) devices. A novel printable electrochemical pH sensor based on graphene and pigment melanin (PGM), was

    更新日期:2020-03-04
  • Dopamine-functionalized graphene oxide as a high-performance material for biosensing
    2D Mater. (IF 7.14) Pub Date : 2020-02-27
    Fabio Vulcano, Alessandro Kovtun, Cristian Bettini, Zhenyuan Xia, Andrea Liscio, Fabio Terzi, Aranzazu Heras, Alvaro Colina, Barbara Zanfrognini, Manuela Melucci, Vincenzo Palermo and Chiara Zanardi

    We describe a nanocomposite material for the electrochemical detection of β -nicotinamide adenine dinucleotide (NADH), a coenzyme involved in redox reactions of all living cells and in the detection of many organic species by electrochemical biosensors. The composite is made of nanosheets of electrochemically exfoliated graphene oxide (EGO) covalently functionalized with dopamine (DP) molecules. The

    更新日期:2020-03-04
  • Influence of channel thickness on charge transport behavior of multi-layer indium selenide (InSe) field-effect transistors
    2D Mater. (IF 7.14) Pub Date : 2020-02-27
    Milinda Wasala, Prasanna D Patil, Sujoy Ghosh, Rana Alkhaldi, Lincoln Weber, Sidong Lei, Robert Vajtai, Pulickel M Ajayan and Saikat Talapatra

    Atomically thin Van der Waals solids that exhibit direct band gap in their few layer form can substantially impact the field of two dimensional (2D) materials based electronic devices and related applications. Here we report on electronic charge transport behavior of multi layer n -type InSe field-effect transistor (FET) devices fabricated on SiO 2 /Si substrate with seven different channel thicknesses

    更新日期:2020-03-04
  • Hematite at its thinnest limit
    2D Mater. (IF 7.14) Pub Date : 2020-02-27
    C Bacaksiz, M Yagmurcukardes, F M Peeters and M V Milošević

    Motivated by the recent synthesis of two-dimensional ##IMG## [http://ej.iop.org/images/2053-1583/7/2/025029/tdmab6d79ieqn001.gif] -Fe 2 O 3 (Balan et al 2018 Nat. Nanotechnol . 13 602), we analyze the structural, vibrational, electronic and magnetic properties of single- and few-layer ##IMG## [http://ej.iop.org/images/2053-1583/7/2/025029/tdmab6d79ieqn002.gif] -Fe 2 O 3 compared to bulk, by ab initio

    更新日期:2020-03-04
  • MoS2-enabled dual-mode optoelectronic biosensor using a water soluble variant of μ-opioid receptor for opioid peptide detection.
    2D Mater. (IF 7.14) Pub Date : 2019-12-11
    Chawina De-Eknamkul,Xingwang Zhang,Meng-Qiang Zhao,Wenzhuo Huang,Renyu Liu,A T Charlie Johnson,Ertugrul Cubukcu

    Owing to their unique electrical and optical properties, two-dimensional transition metal dichalcogenides have been extensively studied for their potential applications in biosensing. However, simultaneous utilization of both optical and electrical properties has been overlooked, yet it can offer enhanced accuracy and detection versitility. Here, we demonstrate a dual-mode optoelectronic biosensor

    更新日期:2019-12-11
  • Reversible Graphene decoupling by NaCl photo-dissociation.
    2D Mater. (IF 7.14) Pub Date : 2019-04-16
    I Palacio,L Aballe,M Foerster,D G de Oteyza,M García-Hernández,J A Martín-Gago

    We describe the reversible intercalation of Na under graphene on Ir(111) by photo-dissociation of a previously adsorbed NaCl overlayer. After room temperature evaporation, NaCl adsorbs on top of graphene forming a bilayer. With a combination of electron diffraction and photoemission techniques we demonstrate that the NaCl overlayer dissociates upon a short exposure to an X-ray beam. As a result, chlorine

    更新日期:2019-11-01
  • Large-area synthesis of high-quality monolayer 1T'-WTe2 flakes.
    2D Mater. (IF 7.14) Pub Date : 2018-05-01
    Carl H Naylor,William M Parkin,Zhaoli Gao,Hojin Kang,Mehmet Noyan,Robert B Wexler,Liang Z Tan,Youngkuk Kim,Christopher E Kehayias,Frank Streller,Yu Ren Zhou,Robert Carpick,Zhengtang Luo,Yung Woo Park,Andrew M Rappe,Marija Drndić,James M Kikkawa,A T Charlie Johnson

    Large-area growth of monolayer films of the transition metal dichalcogenides is of the utmost importance in this rapidly advancing research area. The mechanical exfoliation method offers high quality monolayer material but it is a problematic approach when applied to materials that are not air stable. One important example is 1T'-WTe2, which in multilayer form is reported to possess a large non saturating

    更新日期:2019-11-01
  • Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene.
    2D Mater. (IF 7.14) Pub Date : 2018-03-17
    Albert F Rigosi,Heather M Hill,Nicholas R Glavin,Sujitra J Pookpanratana,Yanfei Yang,Alexander G Boosalis,Jiuning Hu,Anthony Rice,Andrew A Allerman,Nhan V Nguyen,Christina A Hacker,Randolph E Elmquist,Angela R Hight Walker,David B Newell

    Monolayer epitaxial graphene (EG), grown on the Si face of SiC, is an advantageous material for a variety of electronic and optical applications. EG forms as a single crystal over millimeter-scale areas and consequently, the large scale single crystal can be utilized as a template for growth of other materials. In this work, we present the use of EG as a template to form millimeter-scale amorphous

    更新日期:2019-11-01
  • Trion Valley Coherence in Monolayer Semiconductors.
    2D Mater. (IF 7.14) Pub Date : 2017-09-20
    Kai Hao,Lixiang Xu,Fengcheng Wu,Philipp Nagler,Kha Tran,Xin Ma,Christian Schüller,Tobias Korn,Allan H MacDonald,Galan Moody,Xiaoqin Li

    The emerging field of valleytronics aims to exploit the valley pseudospin of electrons residing near Bloch band extrema as an information carrier. Recent experiments demonstrating optical generation and manipulation of exciton valley coherence (the superposition of electron-hole pairs at opposite valleys) in monolayer transition metal dichalcogenides (TMDs) provide a critical step towards control of

    更新日期:2019-11-01
  • Temperature dependence of electron density and electron-electron interactions in monolayer epitaxial graphene grown on SiC.
    2D Mater. (IF 7.14) Pub Date : 2017-08-05
    Chieh-Wen Liu,Chiashain Chuang,Yanfei Yang,Randolph E Elmquist,Yi-Ju Ho,Hsin-Yen Lee,Chi-Te Liang

    We report carrier density measurements and electron-electron (e-e) interactions in monolayer epitaxial graphene grown on SiC. The temperature (T)-independent carrier density determined from the Shubnikov-de Haas (SdH) oscillations clearly demonstrates that the observed logarithmic temperature dependence of Hall slope in our system must be due to e-e interactions. Since the electron density determined

    更新日期:2019-11-01
  • Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition.
    2D Mater. (IF 7.14) Pub Date : 2017-01-11
    R Muñoz,C Munuera,J I Martínez,J Azpeitia,C Gómez-Aleixandre,M García-Hernández

    Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650°C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain

    更新日期:2019-11-01
  • Controlling the layer localization of gapless states in bilayer graphene with a gate voltage.
    2D Mater. (IF 7.14) Pub Date : 2018-01-01
    W Jaskólski,M Pelc,Garnett W Bryant,Leonor Chico,A Ayuela

    Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied gate

    更新日期:2018-01-01
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